CN102881715A - High-frequency and low-noise gallium nitride transistor structure with high electronic mobility - Google Patents
High-frequency and low-noise gallium nitride transistor structure with high electronic mobility Download PDFInfo
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- CN102881715A CN102881715A CN2012102328100A CN201210232810A CN102881715A CN 102881715 A CN102881715 A CN 102881715A CN 2012102328100 A CN2012102328100 A CN 2012102328100A CN 201210232810 A CN201210232810 A CN 201210232810A CN 102881715 A CN102881715 A CN 102881715A
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Abstract
The invention relates to a high-frequency and low-noise gallium nitride transistor structure with high electronic mobility. The structure comprises a substrate, an aluminium nitride nucleating layer arranged on the substrate and a gallium nitride cushioning layer arranged on the aluminium nitride nucleating layer; the substrate, the aluminium nitride nucleating layer and the gallium nitride cushioning layer are sequentially overlapped from bottom to top; the high-frequency and low-noise gallium nitride transistor structure with the high electronic mobility is characterized in that an InGaN inserting layer for improving roughness of a component interface, an aluminium nitride inserting layer for improving a potential barrier, an AlGaN isolating layer, an AlGaN electronic providing layer, an AlGaN potential barrier layer as well as a source electrode, a grid electrode and a drain electrode which are respectively in ohm connection with the AlGaN potential barrier layer are sequentially overlapped on the gallium nitride cushioning layer. The high-frequency and low-noise gallium nitride transistor structure has the beneficial effects that two-dimensional electronic gas is better bound in a potential well, therefore, scattering of the two-dimensional electronic gas caused by impurities in a channel layer is reduced, and a saturated rate and a mobility ratio of the two-dimensional electronic gas are increased, and a noise performance of a device is improved, particularly a high-frequency noise performance.
Description
Technical field
The invention belongs to communications electronics components and parts technical field, be specifically related to gallium nitride (GaN) wide band gap semiconductor device structural design field.
Background technology
Semiconductor material with wide forbidden band has disruptive field intensity, the saturated electrons migration rate is high, thermal conductivity is high and the advantage such as radioresistance, AlGaN/GaN heterostructure energy gap difference is large simultaneously, can accumulate highdensity two-dimensional electron gas (2DEG), so that AlGaN/GaN HEMT(High Electron Mobility Transistor) demonstrate powerful advantage at aspects such as high frequency, high power, low-noise devices.The GaN High Electron Mobility Transistor devices has stronger robust property simultaneously, can bear higher input power, improves the dynamic range of device, reduces the use of amplitude limiter circuit, saves the circuit design manufacturing cost.At present, the research of GaN device architecture stresses to be how to improve the power density aspect, relates to less for the gallium nitride low-noise device that is applicable to microwave and millimeter wave.Design gallium nitride low noise amplifier module and the selected transistor of monolithic mostly are makes the designed tube core structure of power amplifier.Such structure is fully not high with the gallium nitride material mobility, and electron saturation velocities is large, and the conduction band discontinuity is large, and the dark grade of potential well is applicable to low noise excellent properties and embodies.So research is applicable to the GaN base transistor with high electronic transfer rate low-noise device of microwave and millimeter wave national defence and commercial communication are had great importance.
In the prior art, be used for traditionally the transistor arrangement of making gallium nitride Low noise circuit design as shown in Figure 1, at backing material 4H-SiC, the AlN material, direct epitaxial growth AlGaN(aluminum gallium nitride on gallium nitride (GaN) resilient coating) barrier layer, the composition of aluminium is (to see open source literature DC between 15% ~ 40% in the AlGaN barrier layer, RF, and Microwave Noise Performance of AlGaN – GaN Field Effect Transistors Dependence of Aluminum Concentration Wu Lu, Vipan Kumar, Edwin L.Piner, and Ilesanmi Adesida IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL.50, NO.4, APRIL 2003), such device architecture uses aspect low noise following three major defects: (1) is because the aluminium atom is not identical with gallium atomic component ratio, gallium aluminium atom random alignment in crystal, the Periodic Potential that exists in the crystal is produced perturbation, thereby cause the alloy scattering of charge carrier, cause ditch device noise performance to reduce.In the bias circuit of low noise amplifier, generally selecting operating current is 10% ~ 15% of saturation current, makes transistor be operated in high field region simultaneously.Its consequence is that the potential barrier of deflection resilient coating one side in the potential well reduces, and channel electrons is leaked to resilient coating, and electron gas concentration reduces in the raceway groove, and channel current reduces, and has increased vertical fluctuation of channel current, thereby has reduced the noiseproof feature of device.(2) direct epitaxial growth AlGaN barrier layer on the GaN resilient coating, in GaN buffer growth process, reason owing to technique, the GaN film of growth has discontinuity, rough surface, thereby reduced the growth quality of AlGaN barrier layer, caused AlGaN barrier layer defective more, reduced mutual conductance and the gain of device.Because trap effect affects the transverse movement of two-dimensional electron gas in the raceway groove, increase the fluctuation of channel current simultaneously, reduced the noiseproof feature of device.(3) two-dimensional electron gas is in motion process, and the direct tunnelling of electrons enters the AlGaN barrier layer, causes gate leakage current, causes noise penalty.
Summary of the invention
The objective of the invention is to have proposed a kind of high-frequency low noise gallium nitride based transistor structure with high electron mobility in order to overcome the deficiency of existing gallium nitride based transistor structure.
Technical scheme of the present invention is: a kind of high-frequency low noise gallium nitride based transistor structure with high electron mobility, comprise the substrate that stacks gradually from the bottom up, be positioned at the aln nucleation layer on the substrate, be positioned at the gallium nitride resilient coating on the aln nucleation layer, it is characterized in that, also stack gradually on the described gallium nitride resilient coating and be useful on the indium gallium nitrogen insert layer of improving the device interfaces degree of roughness, be used for improving the aln inserting layer of potential barrier, the aluminum gallium nitride separator, the aluminum gallium nitride electronics provides layer, the aluminum gallium nitride barrier layer be connected the source electrode that is connected with aluminum gallium nitride barrier layer ohm, grid and drain electrode.
On the above-mentioned aluminum gallium nitride barrier layer, between source electrode and the drain electrode, the zone under the grid also is laminated with silicon nitride passivation.
Above-mentioned grid adopts the T-slot grid structure that can reduce gate contact resistance, and the bottom of T-slot grid structure is run through silicon nitride passivation and is connected with ohm behind the aluminum gallium nitride barrier layer.
Indium gallium nitrogen insert layer the invention has the beneficial effects as follows: owing to can be improved the interfacial characteristics of device, improve the mobility of the two-dimensional electron gas in the High Electron Mobility Transistor, simultaneously formed heterojunction is compared the heterojunction of traditional AlGaN layer and the formation of GaN layer between aln inserting layer and the indium gallium nitrogen insert layer, the larger energy gap that has is poor, the two-dimentional potential well that forms is darker, can better be strapped in two-dimensional electron gas in the potential well, impurity increases saturation rate and the mobility of two-dimensional electron gas to the scattering of two-dimensional electron gas in the reduction channel layer.Improved the noiseproof feature of device, particularly its high-frequency noise performance.
Description of drawings
Fig. 1 is the structural representation of the High Electron Mobility Transistor of traditional AlGaN/GaN structure.
Fig. 2 is the structural representation of the High Electron Mobility Transistor of AlGaN/AlN/InGaN/GaN structure of the present invention.
Fig. 3 is the perspective view of aluminum gallium nitride barrier layer among Fig. 2.
Fig. 4 is that its minimal noise coefficient of transistor of the present invention concerns schematic diagram with frequency change.
Description of reference numerals: silicon nitride passivation 0, source electrode 1, grid 2, drain electrode 3, aluminum gallium nitride barrier layer 4, aluminum gallium nitride electronics provide layer 5, aluminum gallium nitride separator 6, aln inserting layer 7, indium gallium nitrogen insert layer 8, gallium nitride resilient coating 9, aln nucleation layer 10, substrate 11.
Embodiment
The present invention is described further below in conjunction with the drawings and specific embodiments.
Specific embodiment as shown in Figure 2, a kind of high-frequency low noise gallium nitride based transistor structure with high electron mobility, comprise the substrate 11 that stacks gradually from the bottom up, be positioned at aluminium nitride (AlN) nucleating layer 10 on the substrate 11, be positioned at gallium nitride (GaN) resilient coating 9 on the aln nucleation layer 10, also stack gradually on described gallium nitride (GaN) resilient coating 9 and be useful on indium gallium nitrogen (InGaN) insert layer 8 of improving the device interfaces degree of roughness, be used for improving aluminium nitride (AlN) insert layer 7 of potential barrier, aluminum gallium nitride (AlGaN) separator 6, aluminum gallium nitride (AlGaN) electronics provide the layer 5, aluminum gallium nitride (AlGaN) barrier layer 4 be connected and 4 ohm of source electrodes that are connected 1 of aluminum gallium nitride (AlGaN) barrier layer, grid 2 and drain electrode 3.
As a kind of to above-mentioned source electrode 1, grid 2 and be connected 3 with the improvement of 4 ohm of modes that are connected of aluminum gallium nitride barrier layer, on above-mentioned aluminum gallium nitride (AlGaN) barrier layer 4, source electrode 1 and draining between 3, zone under the grid 2 also is laminated with silicon nitride (SiN) passivation layer 0, the purpose one that silicon nitride passivation 0 is set is to reduce the caused parasitic parameter of etching aluminum gallium nitride barrier layer 4 damages, such as the grid parasitic capacitance, the grid stray inductance.It is two for reducing surface state that barrier layer upper surface that the effect such as trap causes exists to the impact of device performance.Concrete structure after the improvement as shown in Figure 3, above-mentioned grid 2 adopts the T-slot grid structure that can reduce gate contact resistance, the groove that silicon nitride (SiN) passivation layer 0 is run through in the bottom of T-slot grid structure is connected with 4 ohm of aluminum gallium nitride barrier layers.
Further, for the source electrode 1 and the ohmic contact of drain electrode 3 with aluminum gallium nitride barrier layer 4 that improves device, heavy doping is carried out in Al-Ga-N material zone under these two electrodes (source electrode 1 and drain electrode 3) (being the zone that source electrode 1 and aluminum gallium nitride barrier layer 4, the aluminum gallium nitride electronics of drain electrode 3 below correspondences provide layer 5, aluminum gallium nitride separator 6), doping way is Implantation, adopt Si to carry out the N-type Uniform Doped, doping content is 1e20-1e21cm
-3
In the above-mentioned specific embodiment, substrate 11 can be chosen in 4H_SIC, and sapphire or silicon are as substrate.
In the above-mentioned specific embodiment, indium gallium nitrogen (InGaN) insert layer 8 is used for improving the device interfaces degree of roughness, and thickness is between 1 ~ 6nm, and phosphide atom accounts for 0.5% ~ 5% of indium gallium alloy total atom number in the described indium gallium nitrogen insert layer 8, the thickness optimal value is 4nm, and In atomic component optimal value is 1.5%.
In the above-mentioned specific embodiment, the thickness of aluminium nitride (AlN) insert layer 7 is between 0.2nm ~ 2nm, and optimizing the optimal value that obtains is 1nm.
In the above-mentioned specific embodiment, the groove depth of aluminum gallium nitride barrier layer 4 and width change with the varied in thickness of barrier layer 4, and the groove depth optimal value is 1/5th of barrier layer 4 thickness.
Its concrete structure of manufacturing process further instruction and effect below by the transistor arrangement of introducing above-mentioned specific embodiment: a kind of manufacture method of high-frequency low noise gallium nitride based transistor structure with high electron mobility comprises the steps:
Step 1: at 4H_SIC, be low temperature aluminium nitride (AlN) nucleating layer 10 of 100nm by metallo-organic compound gaseous phase deposition (MOCVD) or molecular beam epitaxy (MBE) growth thickness on sapphire or the silicon chip; The effect of nucleating layer 10 is as high growth temperature GaN resilient coating 9 provides effective nuclearing centre, and plays the effect of effective reduction resilient coating 9 dislocations, thereby improves stability and the performance of device.
Step 2: be the GaN resilient coating 9 of 2.0um by metallo-organic compound gaseous phase deposition (MOCVD) or molecular beam epitaxy (MBE) growth thickness at low temperature AI N nucleating layer 10.The resistive of resilient coating is high resistive, and its purpose is to reduce resilient coating 9 leakage currents, reduces vertical fluctuation of channel current, improves the noiseproof feature of device.
Step 3: utilizing metallo-organic compound gaseous phase deposition (MOCVD) or molecular beam epitaxy (MBE) growth thickness at GaN resilient coating 9 is the insert layer 8 of the low In component I nGaN of 4nm, its purpose is to improve the degree of roughness of resilient coating 8 upper surfaces of device, improve the growth quality of device AlGaN film, reduce dislocation (local irregularities of atom arranges) and defective.But too much when the In atom simultaneously, can increase channel electrons impurity scattering probability, reduce electron mobility and saturation rate.So In of the present invention accounts for In in the compound, Ga total atom number 0.15% ~ 2% between.
Step 4: be the AlN insert layer 7 of 1nm by metallo-organic compound gaseous phase deposition (MOCVD) or molecular beam epitaxy (MBE) growth a layer thickness in InGaN insert layer 8, main purpose is to increase the conduction band discontinuity of InGaN and AlGaN, and the conduction band that increases between barrier layer material and the cushioning layer material is poor.Form darker potential well, be convenient to two-dimensional electron gas is concentrated in the potential well, reduce that Deep Level Traps has improved two-dimensional electron gas mobility and saturation rate to the scattering process of channel electrons in the GaN resilient coating 9.
Step 5: be that 5nm non-had a mind to doped with Al GaN separator 6 by metallo-organic compound gaseous phase deposition (MOCVD) or molecular beam epitaxy (MBE) growth thickness in AlN insert layer 7, purpose reduces electronics to the diffusion of barrier region, improves performance of devices.
Step 6: provide layer 5 by the AlGaN electronics that metallo-organic compound gaseous phase deposition (MOCVD) or molecular beam epitaxy (MBE) growth 10nm have a mind to mix at AlGaN separator 6, adopt the mode of Implantation to utilize Si that this layer is carried out the N-type Uniform Doped, doping content is 2e18cm
-3Purpose is to provide more channel electrons.Increase the two-dimensional electron gas electron concentration, thereby improve the high frequency performance of device.
Step 7: provide layer 5 by metallo-organic compound gaseous phase deposition (MOCVD) or the non-AlGaN barrier layer 4 of having a mind to doping of molecular beam epitaxy (MBE) growth 10nm at the AlGaN electronics.
Step 8: with drain electrode 3, the mode that the Al-Ga-N material zone of source electrode 1 contact adopts ion beam to inject utilizes Si to carry out the N-type Uniform Doped, doping content is 2e21cm
-3, the degree of depth is 50nm, width equals the length of source electrode and drain electrode.Purpose is to reduce the contact resistance of drain electrode and source electrode.
Step 9: be that the 5nm width is the groove of 0.2um at AlGaN barrier layer 4 etch depths; utilize the method precipitation of evaporation of metal or sputter to make the T-shaped grid that grid length is 0.12um, grid and about barrier layer between adopt chemical gaseous phase deposition (CVD) method deposited silicon nitride passivation layers 0 to protect.
Make grid, source electrode and drain electrode according to conventional method (evaporation of metal or sputtering method accumulation are at nitride surface) on the step 10:AlGaN barrier layer 4.Gate metal is Ni/Au (nickel alumin(i)um alloy), and drain electrode is to allow drain electrode and source electrode have little ohmic contact resistance, good interface fineness and reliability with source metal for (Ti/Al/Ni/Au) its purpose.
Conventional technological means is all adopted in the epitaxial growth of each layer among the present invention: metallo-organic compound gaseous phase deposition (MOCVD) or molecular beam epitaxy (MBE).Innovative point of the present invention is: (1) compare with traditional GaN High Electron Mobility Transistor in the channel material GaN of two-dimensional electron gas motion, channel material of the present invention is InGaN.(2) compare with traditional GaN High Electron Mobility Transistor in the single AlGaN of barrier layer material, the present invention has inserted the thin AlN insert layer of one deck, has increased the height of potential barrier.(3) compare with traditional GaN High Electron Mobility Transistor in plain barrier layer, the present invention utilizes Si to carry out the selectable layering of N-type and mixes, and has improved the concentration of two-dimensional electron gas in the raceway groove.(4) barrier layer and leakage, the zone N-type heavy doping of adopting of source electrode contact, the mode of doping and concentration and the degree of depth.(5) adopt the groove grid, T-shaped grid structure also is used in conjunction with the insulating silicon nitride body as passivation layer, reduced near the barrier layer of grid because the caused defective of etch damage, improve thus near the Electric Field Characteristics of grid, reduced simultaneously the surface state of barrier layer 4 upper surfaces existence to the impact of two-dimensional electron gas motion in the raceway groove.Reduce the grid parasitic capacitance, improved the current cut-off frequency of device, thereby improved the high frequency characteristics of device.
The present invention optimizes the relevant parameter of barrier structure simultaneously by changing barrier structure.Device is operated under the corresponding bias voltage of low noise amplifier, has the long GaN High Electron Mobility Transistor of identical grid than tradition, mutual conductance and electron mobility obviously increase, alloy scattering significantly reduces, gate leakage current obviously reduces, grid significantly strengthens the control action of channel current, and vertical fluctuation of channel current obviously reduces, the noiseproof feature of device be improved significantly.Its minimal noise coefficient of transistor as shown in Figure 4 concerns schematic diagram with frequency change, and wherein abscissa is that cps is Hz, and ordinate is transistorized minimal noise coefficient, and unit is dB.Wherein triangle is AlGaN/AlN/InGaN/GaN HEMT(High Electron Mobility Transistor proposed by the invention, High Electron Mobility Transistor) minimal noise coefficient, round dot is the minimal noise coefficient that has the long traditional AlGaN/GaN HEMT of identical grid in the prior art, by experimental data among the figure, the solution of the present invention has the minimal noise coefficient that is better than traditional scheme.
Those of ordinary skill in the art will appreciate that, embodiment described here is in order to help reader understanding's principle of the present invention, should to be understood to that protection scope of the present invention is not limited to such special statement and embodiment.Those of ordinary skill in the art can make various other various concrete distortion and combinations that do not break away from essence of the present invention according to these technology enlightenments disclosed by the invention, and these distortion and combination are still in protection scope of the present invention.
Claims (7)
1. high-frequency low noise gallium nitride based transistor structure with high electron mobility, comprise the substrate that stacks gradually from the bottom up, be positioned at aln nucleation layer on the substrate, be positioned at the gallium nitride resilient coating on the aln nucleation layer, it is characterized in that, also stack gradually on the described gallium nitride resilient coating and be useful on the indium gallium nitrogen insert layer of improving the device interfaces degree of roughness, aln inserting layer, the aluminum gallium nitride separator that is used for improving potential barrier, the aluminum gallium nitride electronics provides layer, the aluminum gallium nitride barrier layer be connected source electrode, grid and the drain electrode that is connected with aluminum gallium nitride barrier layer ohm.
2. a kind of high-frequency low noise gallium nitride based transistor structure with high electron mobility according to claim 1, on the described aluminum gallium nitride barrier layer, between source electrode and the drain electrode, the zone under the grid also is laminated with silicon nitride passivation.
3. a kind of high-frequency low noise gallium nitride based transistor structure with high electron mobility according to claim 2, it is characterized in that, described grid adopts the T-slot grid structure that can reduce gate contact resistance, and the groove that silicon nitride passivation is run through in the bottom of T-slot grid structure is connected with aluminum gallium nitride barrier layer ohm.
4. a kind of high-frequency low noise gallium nitride based transistor structure with high electron mobility according to claim 2, it is characterized in that, the groove depth of described aluminum gallium nitride barrier layer and width change with the varied in thickness of barrier layer, and the groove depth optimal value is 1/5th of barrier layer thickness.
5. a kind of high-frequency low noise gallium nitride based transistor structure with high electron mobility according to claim 1, it is characterized in that, the thickness of described indium gallium nitrogen insert layer is between 1 ~ 6nm, and phosphide atom accounts for 0.5% ~ 5% of indium gallium alloy total atom number in the described indium gallium nitrogen insert layer 8.
6. a kind of high-frequency low noise gallium nitride based transistor structure with high electron mobility according to claim 1 is characterized in that, the thickness of aln inserting layer is between 0.2nm ~ 2nm.
7. according to claim 1 to 6 each described a kind of high-frequency low noise gallium nitride based transistor structure with high electron mobility, it is characterized in that, for the source electrode that improves device and the ohmic contact of drain electrode and aluminum gallium nitride barrier layer 4, the Al-Ga-N material zone under these two electrodes (source electrode and drain electrode) (being the zone that corresponding aluminum gallium nitride barrier layer, the aluminum gallium nitride electronics of source electrode and drain electrode below provides layer, aluminum gallium nitride separator) carries out N-type heavy doping.
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| CN111640672A (en) * | 2020-06-03 | 2020-09-08 | 上海新傲科技股份有限公司 | Enhanced gallium nitride-based high electron mobility transistor and preparation method thereof |
| CN111834454A (en) * | 2020-06-08 | 2020-10-27 | 西安电子科技大学 | Gallium nitride transistor with self-aligned source and drain electrodes and preparation method thereof |
| CN113707718A (en) * | 2021-07-27 | 2021-11-26 | 华为技术有限公司 | Power device, preparation method thereof and electronic device |
| WO2023005578A1 (en) * | 2021-07-27 | 2023-02-02 | 华为技术有限公司 | Power device, preparation method therefor, and electronic apparatus |
| CN113707718B (en) * | 2021-07-27 | 2023-11-03 | 华为技术有限公司 | Power device, preparation method thereof and electronic device |
| CN113823628A (en) * | 2021-08-27 | 2021-12-21 | 深圳市汇芯通信技术有限公司 | Integrated chip and manufacturing method thereof |
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