CN212542443U - Gallium nitride transistor structure and gallium nitride-based epitaxial structure - Google Patents
Gallium nitride transistor structure and gallium nitride-based epitaxial structure Download PDFInfo
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Abstract
The utility model discloses a gallium nitride transistor structure and gallium nitride base epitaxial structure, gallium nitride transistor structure contains from the substrate, buffer layer, channel layer, polarization doping p type AlGaN layer, AlGaN barrier layer of stromatolite from top down in proper order; a source and a drain provided on the AlGaN barrier layer; the AlGaN barrier layer is provided with a groove or the upper part of the polarization doped p-type AlGaN layer and the AlGaN barrier layer are provided with grooves, the groove is internally provided with a p-type GaN layer, and the position of the groove is between the source electrode and the drain electrode; a gate disposed on the p-type GaN layer; adopt the utility model discloses a gallium nitride base epitaxial structure's transistor is a gallium nitride base HEMT device that has high threshold, high power.
Description
Technical Field
The present invention relates to semiconductor devices, and more particularly to a gallium nitride transistor and a gallium nitride-based epitaxial structure.
Background
Gallium nitride-based III-V group compounds as a key third-generation semiconductor material have the advantages of adjustable forbidden band width, high breakdown field strength, high electronic saturation rate, corrosion resistance, radiation resistance and the like, and are widely applied to solid-state lighting and high-power and high-efficiency electronic materials. Gallium nitride-based High Electron Mobility Transistors (HEMTs) are the main structures of current gallium nitride electronic devices, and due to high electron mobility and high two-dimensional electron gas concentration, the HEMTs can greatly improve the working frequency and power of the electronic devices, and become key devices for 5G base station communication and high-efficiency power management.
The discontinuity of spontaneous polarization and piezoelectric polarization of the AlxGa1-xN barrier layer and the GaN channel layer in the GaN-based HEMT device has a large amount of residual polarization charges at the interface to form a potential well pole of electrons so as to form a high-concentration two-dimensional electron gas. In the GaN-based HEMT device, a high concentration of two-dimensional electron gas still exists in the channel layer without doping of the barrier and gate bias, so the gallium nitride-based HEMT is a normally-on device in general. The most commonly used transistor in conventional silicon-based power electronic circuit designs is the normally-off transistor, and therefore, the normally-off GaN-based transistor needs to be manufactured by replacing the silicon power electronic device with the gallium nitride-based HEMT. The most common method for realizing the normally-off GaN-based transistor comprises two major methods, namely, a normally-on GaN-based HEMT device and a silicon-based normally-off transistor form a Cascode device to realize the function of the normally-off transistor; the other method is to directly manufacture a gallium nitride-based normally-off HEMT device, and two-dimensional electron gas of a conducting channel is depleted by etching a barrier layer and injecting negative ions into the barrier layer or growing a P-GaN cap layer on the barrier layer, so that a normally-off GaN-based transistor is directly manufactured. The first method limits the device characteristics of the gallium nitride based transistor under high temperature and high switching speed frequency conditions due to the fact that a silicon transistor is connected in series in the circuit. The second method for directly manufacturing the enhanced GaN-based transistor can effectively play the advantages of high temperature resistance, small on-resistance, high switching frequency and the like of the GaN-based transistor, but the manufacturing difficulty of the device is high, the starting voltage is slightly low, and the characteristics of the device are closely related to the manufacturing process and the epitaxial structure of the device.
Disclosure of Invention
An object of the utility model is to overcome prior art not enough, provide a gallium nitride transistor structure and gallium nitride base epitaxial structure.
The utility model provides a gallium nitride transistor structure, which comprises a substrate, a buffer layer, a channel layer, a polarization doped p-type AlGaN layer and an AlGaN barrier layer which are sequentially laminated from bottom to top;
a source and a drain provided on the AlGaN barrier layer;
the AlGaN barrier layer is provided with a groove or the upper part of the polarization doped p-type AlGaN layer and the AlGaN barrier layer are provided with grooves, the groove is internally provided with a p-type GaN layer, and the position of the groove is between the source electrode and the drain electrode;
and the grid electrode is arranged on the p-type GaN layer, and the surface of the p-type GaN layer is higher than the surface of the AlGaN barrier layer.
Further, the substrate is silicon, silicon carbide or sapphire.
Further, the buffer layer is an AlGaN buffer layer, a GaN buffer layer or an AlGaN and GaN combined buffer layer.
Furthermore, a nucleation layer is arranged between the buffer layer and the substrate; the nucleating layer is an AlN layer or a GaN layer, and the thickness of the nucleating layer is 20nm-300 nm.
Furthermore, the channel layer is a gallium nitride layer, and the thickness range of the channel layer is 100nm-500 nm.
Further, the thickness range of the polarization doped p-type AlGaN layer is 10nm-50 nm.
Further, the AlGaN barrier layer has a thickness ranging from 15nm to 30 nm.
Further, the thickness of the p-type GaN layer ranges from 50nm to 300 nm.
The utility model provides a gallium nitride-based epitaxial structure in another embodiment, which comprises a substrate, a buffer layer, a channel layer, a polarization doped p-type AlGaN layer and an AlGaN barrier layer which are sequentially laminated from bottom to top; the AlGaN barrier layer is provided with a groove or the upper part of the polarization doped p-type AlGaN layer and the AlGaN barrier layer are provided with grooves, and the p-type GaN layer is arranged in the groove; the surface of the p-type GaN layer is higher than the surface of the AlGaN barrier layer.
Further, the AlGaN barrier layer has a thickness ranging from 15nm to 30 nm.
Further, the thickness of the p-type GaN layer ranges from 50nm to 300 nm.
Compared with the prior art, the beneficial effects of the utility model are as follows:
the utility model provides a gallium nitride base epitaxial structure adopts the gallium nitride epitaxial structure of double-deck p type cap layer, and this epitaxial structure can prepare gallium nitride HEMT transistor, can prepare out the gallium nitride base electron device of high threshold value, high power. The double-layer p-type cap layer is composed of a polarization doped p-type AlGaN layer and a Mg doped p-type GaN layer, and the two p-type layers can play a role in depleting channel two-dimensional electron gas, so that the high-threshold enhanced HEMT device is obtained.
Meanwhile, the polarization doped p-type AlGaN layer is also an etching stop layer before secondary epitaxial growth, compared with the traditional single-layer p-type cap layer structure, the double cap layers (the polarization doped p-type AlGaN layer and the p-type GaN layer) can obtain higher threshold voltage and higher current density, and compared with the traditional secondary epitaxy after etching the barrier layer, the p-type AlGaN layer as the etching stop layer and the nucleation layer of the secondary epitaxy can avoid channel etching damage and diffusion of doping atoms to the channel layer so as to improve the dynamic electrical property of the device; utilize the utility model discloses a gallium nitride base epitaxial structure of double-deck p type cap layer can obtain the enhancement mode gaN base HEMT device of high threshold, high power.
Drawings
Fig. 1 is a schematic view of a gallium nitride transistor structure according to embodiment 1 of the present invention;
fig. 2 is a schematic view of a gallium nitride transistor structure according to embodiment 2 of the present invention;
fig. 3 is a schematic view of a gallium nitride-based epitaxial structure according to example 3 of the present invention;
fig. 4 is a schematic view of a gallium nitride-based epitaxial structure according to embodiment 4 of the present invention.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. All drawings of the utility model are only schematic so as to be easier to understand the utility model, and the specific proportion thereof can be adjusted according to the design requirements. The sizes and numbers of the elements in the device fabrication process described herein are merely examples, which may be adjusted according to design requirements.
In the description of the present invention, it is to be understood that the terms "height", "thickness", "upper", "lower", "surface", "above", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.
Example 1
The embodiment of the utility model provides a gallium nitride transistor structure, see fig. 1, from substrate 11, buffer layer 13, channel layer 14, polarization doping p type AlGaN layer 15, AlGaN barrier layer 16 that from bottom to top superpose in proper order of gallium nitride transistor structure;
a source electrode 19 and a drain electrode 10 provided on the AlGaN barrier layer 16;
a groove is formed in the AlGaN barrier layer, a p-type GaN layer 17 is arranged in the groove, and the groove is located between the source electrode 19 and the drain electrode 10;
and a gate electrode 18 provided on the p-type GaN layer 17;
the inner wall of the groove is provided with a p-type GaN layer 17 which is contacted with the polarization doped p-type AlGaN layer 15 and the AlGaN barrier layer 16;
the gate 18 is positioned between the source 19 and the drain 10.
As this embodiment, it is preferable that the buffer layer further includes a nucleation layer 12, the nucleation layer 12 is disposed between the substrate 11 and the buffer layer 13, the nucleation layer is an AlN layer, and the thickness of the nucleation layer is 20nm to 300 nm. The nucleation layer of the utility model comprises a high-temperature AlN layer, a low-temperature AlN layer or a low-temperature GaN layer.
Further, the substrate 11 may be silicon (Si), silicon carbide (SiC), or Sapphire (Sapphire).
Further, the buffer layer 13 is an AlGaN buffer layer or a GaN buffer layer or a combination of AlGaN and GaN buffer layers, and has a thickness ranging from 1 μm to 6 μm.
In this embodiment, the channel layer is a gallium nitride layer, and the thickness of the channel layer is in a range of 100nm to 500 nm.
The thickness range of the polarization doped p-type AlGaN layer 15 is 10nm-50 nm. The polarization doped p-type AlGaN layer is a gradual change AlGaN layer with gradually reduced Al component, and the polarization doped layer close to the channel layer 14 is made of Al component larger than that close to the AlGaN barrier layer 16.
Further, the AlGaN barrier layer 16 has a thickness ranging from 15nm to 30nm, and the p-type GaN layer 17 has a thickness ranging from 50nm to 300 nm.
The surface of the p-type GaN layer is higher than the surface of the AlGaN barrier layer, and the height difference h1 ranges from 30nm to 280 nm.
In this embodiment, the p-type GaN layer 17 is located on the polarization-doped p-type AlGaN layer 15, the AlGaN barrier layer 16 has a thickness of 25nm, the polarization-doped p-type AlGaN layer 15 has a thickness of 30nm, the p-type GaN layer 17 has a thickness of 105nm, the surface of the p-type GaN layer 17 is higher than the surface of the AlGaN barrier layer 16, and the height difference h1 is 80 nm.
It should be noted that the p-type GaN layer of the present invention is a Mg-doped p-type GaN layer.
Example 2
The embodiment of the utility model provides a gallium nitride transistor structure, see fig. 2, from substrate 21, buffer layer 23, channel layer 24, polarization doping p type AlGaN layer 25, AlGaN barrier layer 26 that from bottom to top superpose in proper order of gallium nitride transistor structure;
a source electrode 29 and a drain electrode 20 provided on the AlGaN barrier layer 26;
grooves are formed in the upper portion of the polarization doped p-type AlGaN layer 25 and the AlGaN barrier layer 26, a p-type GaN layer 27 is arranged in each groove, and the position of each groove is between the source electrode 29 and the drain electrode 20; specifically, the AlGaN barrier layer 26 is provided with a groove and extends to the upper part of the p-type AlGaN layer 25,
and a gate electrode 28 provided on the p-type GaN layer 27;
the inner wall of the groove is provided with a p-type GaN layer 27 which is contacted with the polarization doped p-type AlGaN layer 25 and the AlGaN barrier layer 26;
the gate 28 is positioned between the source 29 and the drain 20.
As this embodiment, it is preferable that the buffer layer further includes a nucleation layer 22, the nucleation layer 22 is disposed between the substrate 21 and the buffer layer 23, the nucleation layer is an AlN layer or a GaN layer, and the thickness of the nucleation layer is 20nm to 300 nm. The nucleation layer of the utility model comprises a high-temperature AlN layer, a low-temperature AlN layer or a low-temperature GaN layer.
Further, the substrate 21 may be silicon (Si), silicon carbide (SiC), or Sapphire (Sapphire).
Further, the buffer layer 23 is an AlGaN buffer layer or a GaN buffer layer or a combination of AlGaN and GaN buffer layers, and has a thickness ranging from 1 μm to 6 μm.
In the present embodiment, the channel layer 24 is a gallium nitride layer, and the thickness of the channel layer is in the range of 100nm to 500 nm.
The thickness range of the polarization doped p-type AlGaN layer 25 is 10nm-50 nm. The polarization-doped p-type AlGaN layer 25 is a gradient AlGaN layer in which the Al composition gradually decreases, and the polarization-doped layer near the channel layer 24 has an Al composition larger than that of the AlGaN barrier layer 26.
Further, the AlGaN barrier layer 26 has a thickness ranging from 15nm to 30nm, and the p-type GaN layer 27 has a thickness ranging from 50nm to 300 nm.
The surface of the p-type GaN layer is higher than the surface of the AlGaN barrier layer, and the height difference h2 ranges from 30nm to 280 nm.
In this embodiment, the AlGaN barrier layer 26 is recessed and extends to the upper region of the p-type AlGaN layer 25,
the p-type GaN layer 27 is positioned in the groove of the polarization doped p-type AlGaN layer 25 and the groove of the AlGaN barrier layer, the thickness of the AlGaN barrier layer 26 is 25nm, the thickness of the polarization doped p-type AlGaN layer 25 is 45nm, and the depth of the groove on the upper part of the polarization doped p-type AlGaN layer 25 is 15 nm.
The thickness of the p-type GaN layer 27 is 150nm, the surface of the p-type GaN layer 27 is higher than the surface of the AlGaN barrier layer 26, and the height difference h2 is 110 nm.
Example 3
The embodiment of the utility model provides a gallium nitride base epitaxial structure is provided, can be used to make the gallium nitride transistor, see fig. 3, and gallium nitride base epitaxial structure is by substrate 31, buffer layer 33, channel layer 34, polarization doping p type AlGaN layer 35, AlGaN barrier layer 36 that from top to bottom stromatolite in proper order;
the AlGaN barrier layer 36 is provided with a groove, a p-type GaN layer 37 is arranged in the groove, and the inner wall of the groove is provided with the p-type GaN layer 37 which is in contact with the polarization doped p-type AlGaN layer 35 and the AlGaN barrier layer 36;
further, the substrate 31 may be silicon (Si), silicon carbide (SiC), or Sapphire (Sapphire).
Further, the buffer layer 33 is an AlGaN buffer layer or a GaN buffer layer or a combination of AlGaN and GaN buffer layers, and has a thickness ranging from 1 μm to 6 μm.
In the present embodiment, the channel layer 34 is a gallium nitride layer, and the thickness of the channel layer is in the range of 100nm to 500 nm.
The thickness range of the polarization doped p-type AlGaN layer 35 is 10nm-50 nm. The polarization doped p-type AlGaN layer is a gradual change AlGaN layer with gradually reduced Al component, and the polarization doped layer close to the channel layer 34 is an Al component larger than that close to the AlGaN barrier layer 36.
Further, the AlGaN barrier layer 36 has a thickness ranging from 15nm to 30nm, and the p-type GaN layer 37 has a thickness ranging from 50nm to 300 nm.
The surface of the p-type GaN layer is higher than the surface of the AlGaN barrier layer, and the height difference h3 ranges from 30nm to 280 nm.
In the present embodiment, the p-type GaN layer 37 is located on the polarization-doped p-type AlGaN layer 35, the AlGaN barrier layer 36 has a thickness of 20nm, the polarization-doped p-type AlGaN layer 35 has a thickness of 40nm, the p-type GaN layer 37 has a thickness of 120nm, the surface of the p-type GaN layer 37 is higher than the surface of the AlGaN barrier layer 36, and the height difference h3 is 100 nm.
Example 4
The embodiment of the utility model provides a gallium nitride base epitaxial structure is provided, can be used to make the gallium nitride transistor, see fig. 4, gallium nitride transistor structure is by substrate 41, nucleation layer 42, buffer layer 43, channel layer 44, polarization doping p type AlGaN layer 45, AlGaN barrier layer 46 that from top down stromatolite in proper order;
grooves are arranged on the upper part of the polarized doped p-type AlGaN layer 45 and the AlGaN barrier layer 46, a p-type GaN layer 47 is arranged in the groove, specifically, the AlGaN barrier layer 46 is provided with a groove and extends to the upper part of the polarized doped p-type AlGaN layer 45,
the inner wall of the groove is provided with a p-type GaN layer 47 which is contacted with the polarization doped p-type AlGaN layer 45 and the AlGaN barrier layer 46;
further, the substrate 41 may be silicon (Si), silicon carbide (SiC), or Sapphire (Sapphire).
Preferably, the nucleation layer is an AlN layer, and the thickness of the nucleation layer is 20nm-300 nm. The nucleation layer of this embodiment includes a high-temperature AlN layer, a low-temperature AlN layer, or a low-temperature GaN layer.
Further, the buffer layer 43 is an AlGaN buffer layer or a GaN buffer layer or a combination of AlGaN and GaN buffer layers, and has a thickness ranging from 1 μm to 6 μm.
In the present embodiment, the channel layer 44 is a gallium nitride layer, and the thickness of the channel layer is in the range of 100nm to 500 nm.
The polarization doped p-type AlGaN layer 45 has a thickness in the range of 10nm to 50 nm. The polarization-doped p-type AlGaN layer 45 is a gradually-changing AlGaN layer having an Al composition gradually decreasing, and the polarization-doped layer near the channel layer 44 has an Al composition larger than that of the AlGaN barrier layer 46.
Further, the AlGaN barrier layer 46 has a thickness ranging from 15nm to 30nm, and the p-type GaN layer 47 has a thickness ranging from 50nm to 300 nm.
The surface of the p-type GaN layer is higher than the surface of the AlGaN barrier layer, and the height difference h4 ranges from 30nm to 280 nm.
In this embodiment, the AlGaN barrier layer 46 is recessed and extends to the upper region of the p-type AlGaN layer 45,
the p-type GaN layer 47 is positioned in the groove of the polarization doped p-type AlGaN layer 45 and the groove of the AlGaN barrier layer, the thickness of the AlGaN barrier layer 46 is 25nm, the thickness of the polarization doped p-type AlGaN layer 45 is 40nm, and the depth of the groove on the upper part of the polarization doped p-type AlGaN layer 25 is 15 nm.
The thickness of the p-type GaN layer 47 is 130nm, the surface of the p-type GaN layer 47 is higher than the surface of the AlGaN barrier layer 46, and the height difference h4 is 90 nm.
The manufacturing method of the gallium nitride-based epitaxial structure comprises the following steps:
(1) growing a nucleation layer (HT-AlN, LT-GaN, LT-AlN) on a selected heteroepitaxial substrate (sapphire, SiC, Si) by using a metal organic chemical vapor deposition apparatus (MOCVD);
(2) and continuing to epitaxially grow a gallium nitride buffer layer on the nucleation layer:
the buffer layer is a high-resistance buffer layer: an intrinsic high-resistance GaN layer, a Fe-doped high-resistance GaN layer, a high-resistance AlGaN layer or a high-resistance AlGaN/GaN composite layer; the thickness range of the high-resistance buffer layer is 1-6 mu m
(3) Growing a channel layer on the gallium nitride buffer layer: the channel layer is a high-temperature (growth temperature range is 1000 ℃ -1200 ℃) GaN layer; the thickness range of the channel layer is 100nm-500 nm;
(4) growing a polarization doped p-type AlGaN layer on the channel layer, wherein the polarization doped p-type AlGaN layer is a gradient layer in which the Al component is gradually reduced from a high Al component (35% -15%) to a low Al component (15% -5%); the thickness range of the polarization doped p-type AlGaN layer is 10nm-50 nm; it should be noted that the fabrication of the p-type AlGaN layer by polarization doping is not limited to this embodiment;
(5) two methods can be used for growing the residual p-type GaN layer and the AlGaN barrier layer on the polarization doped AlGaN:
the method comprises the following steps: firstly, growing an AlGaN barrier layer on a polarization doped AlGaN layer: the Al component range of the AlGaN barrier layer is 18-30 percent; the thickness range of the AlGaN barrier layer is 15nm-30 nm;
etching the AlGaN barrier layer in the gate region of the epitaxial wafer by utilizing ICP (inductively coupled plasma), and stopping on the surface of the polarization doped p-type AlGaN layer; cleaning the etched epitaxial wafer and sealing and packaging;
and carrying out secondary epitaxial growth on the epitaxial wafer with the etched pattern by using MOCVD to form a p-type GaN layer: p typeThe thickness range of the GaN layer is 50nm-300 nm; the Mg doping concentration is 5E18/cm3To 5E19/cm3To (c) to (d);
etching the p-type GaN layer in the non-gate region of the epitaxial wafer after the secondary epitaxy by utilizing ICP (inductively coupled plasma); cleaning the etched epitaxial wafer and sealing and packaging;
the second method comprises the following steps: firstly, growing a p-type GaN layer on the 4) polarization doped AlGaN layer: the thickness range of the p-type GaN layer is 50nm-300 nm; the Mg doping concentration is 5E18/cm3To 5E19/cm3To (c) to (d);
etching the p-type GaN layer in the non-gate region of the epitaxial wafer by utilizing ICP (inductively coupled plasma), and stopping on the surface of the polarization doped p-type AlGaN layer; cleaning the etched epitaxial wafer and sealing and packaging;
and carrying out secondary epitaxial growth on the AlGaN barrier layer on the epitaxial wafer with the etched pattern by using MOCVD: the Al component range of the AlGaN barrier layer is 18-30 percent; the thickness range of the AlGaN barrier layer is 15nm-30 nm;
etching the AlGaN layer in the gate region of the epitaxial wafer after the secondary epitaxy by utilizing ICP (inductively coupled plasma); cleaning the etched epitaxial wafer and sealing and packaging;
the epitaxial wafer prepared by the epitaxial growth process method is an enhanced HEMT epitaxial structure with double layers of p-type cap layers, and can also be manufactured into a gallium nitride-based transistor.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A gallium nitride transistor structure, characterized by:
the gallium nitride transistor structure comprises a substrate, a buffer layer, a channel layer, a polarization doped p-type AlGaN layer and an AlGaN barrier layer which are sequentially laminated from bottom to top;
a source and a drain provided on the AlGaN barrier layer;
the AlGaN barrier layer is provided with a groove or the upper part of the polarization doped p-type AlGaN layer and the AlGaN barrier layer are provided with grooves, the groove is internally provided with a p-type GaN layer, and the position of the groove is between the source electrode and the drain electrode;
and the grid electrode is arranged on the p-type GaN layer, and the surface of the p-type GaN layer is higher than the surface of the AlGaN barrier layer.
2. The gallium nitride transistor structure of claim 1, wherein:
the substrate is silicon, silicon carbide or sapphire;
the buffer layer is an AlGaN buffer layer, a GaN buffer layer or an AlGaN and GaN combined buffer layer.
3. The gallium nitride transistor structure of claim 1, wherein:
a nucleating layer is also arranged between the buffer layer and the substrate;
the nucleating layer is an AlN layer or a GaN layer, and the thickness of the nucleating layer is 20nm-300 nm.
4. The gallium nitride transistor structure of claim 1, wherein:
the channel layer is a gallium nitride layer, and the thickness range of the channel layer is 100nm-500 nm.
5. The gallium nitride transistor structure of claim 1, wherein:
the thickness range of the polarization doped p-type AlGaN layer is 10nm-50 nm.
6. The gallium nitride transistor structure of claim 1, wherein:
the thickness range of the AlGaN barrier layer is 15nm-30 nm.
7. The gallium nitride transistor structure of claim 1, wherein:
the thickness range of the p-type GaN layer is 50nm-300 nm.
8. A gallium nitride-based epitaxial structure, comprising:
the gallium nitride-based epitaxial structure comprises a substrate, a buffer layer, a channel layer, a polarization doped p-type AlGaN layer and an AlGaN barrier layer which are sequentially laminated from bottom to top;
the AlGaN barrier layer is provided with a groove or the upper part of the polarization doped p-type AlGaN layer and the AlGaN barrier layer are provided with grooves, and the p-type GaN layer is arranged in the groove;
the surface of the p-type GaN layer is higher than the surface of the AlGaN barrier layer.
9. The gallium nitride-based epitaxial structure of claim 8, wherein:
the thickness range of the AlGaN barrier layer is 15nm-30 nm.
10. The gallium nitride-based epitaxial structure of claim 8, wherein:
the thickness range of the p-type GaN layer is 50nm-300 nm.
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