CN104573330A - I-V (Current-voltage) model parameter extraction method based on gallium nitride high electronic mobility crystal valve - Google Patents
I-V (Current-voltage) model parameter extraction method based on gallium nitride high electronic mobility crystal valve Download PDFInfo
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Abstract
The invention discloses an I-V (Current-voltage) model parameter extraction method based on a gallium nitride high electronic mobility crystal valve. The method comprises the following steps of according to the physical meaning of the parameters of an I-V model, blocking the model parameters, decreasing the complicated degree of the I-V model, fitting transfer characteristic curves of actually-measuring pulse I-V and static I-V, extracting the model parameters of the corresponding block. Compared with the traditional parameter extraction method, the method disclosed by the invention has the advantages that the parameter extraction of the I-V model can be quickly and accurately completed, and the modeling efficiency of devices is greatly improved.
Description
Technical field
The invention belongs to power device field, particularly based on the I-V model parameter extraction method of GaN high electron mobility transistor (GaN HEMT).
Background technology
GaN high electron mobility transistor (GaN HEMT) is due to its characteristic such as high frequency, high power, and the application in microwave circuit is more and more extensive.Under GaN HEMT need work in high temperature, high power conditions, therefore large-signal model is the basis using GaN HEMT to carry out microwave circuits.
Current-voltage model and I-V model are the cores of large-signal model, in order to characterize self-heating effect when GaN HEMT works under high-power condition and trap effect, the I-V model of GaN HEMT has more model parameter than the I-V model of the devices such as Si, GaAs, model parameter usually have tens of to more than 100 not etc.
The parameter extraction of I-V model is the basis of organs weight.The I-V model of the devices such as Si, GaAs is few due to number of parameters, usually calculates by actual measurement I-V data the parameter that part has physical significance, then adopts the software debugging optimization rest parameter matching actual measurement I-V curves such as ADS can obtain all model parameters.For the I-V model of GaN HEMT, because number of parameters is very many, traditional parameter extracting method workload is huge, and simple numerical optimization easily obtains the parameter value running counter to physical significance, cannot meet the requirement of high-level efficiency modeling.
Research for GaN HEMT device I-V model parameter extraction method is actually rare in the scientific paper delivered both at home and abroad, the people such as the G.Avolio of such as Leuven university proposed in 2013 to adopt numerical optimization matching low frequency large-signal time domain waveform in multiple working point, obtained the parameter in I-V model with this.The method that the document proposes needs expensive testing apparatus (such as large signal network analysis instrument), realize the comparatively large (G.Avolio of difficulty, A.Raffo, I.Angelov, G.Crupi, G.Vannini, and D.Schreurs; " A Novel Technique for the Extraction of Nonlinear Modelfor Microwave Transistors Under Dynamic-bias Operation "; IEEE MTT-S International MicrowaveSymposium; pp.1-3, June 2013).
The people such as the I.Angelov of Chalmers university proposed in 2013 first to extract at the slope of specific region the parameter that part has physical significance by DC I-V curve, again by all the other parameters of numerical optimization matching low-frequency time-domain waveform extracting, but the I-V model form that the document adopts is comparatively simple, just be difficult to when number of parameters rolls up apply (I.Angelov et al, " HybridMeasurement-based Extraction of Consistent Large-Signal Models for Microwave FETs ", European Microwave Conference, pp.267-270, 2013).
The people such as the Kelvin S.Yuk of California university proposed a kind of I-V model of improvement on the basis of people's work such as Angelov in 2009, this model can reflect trap effect and the self-heating effect of GaN device exactly, but do not provide parameter extracting method (the KS Yuk of concrete and complete I-V model in literary composition, GR Branner, DJ McQuate. " A WidebandMultiharmonic Empirical Large-Signal Model for High-Power GaN HEMTs With Self-Heating andCharge-Trapping Effects ", IEEE Trans.Microwave Theory Tech, 2009, vol.57, no.12, pp.3322-3332, 2009.).
Summary of the invention
In order to solve above-mentioned background technology Problems existing, the present invention proposes the I-V model parameter extraction method of a kind of GaN HEMT, and in Matlab programming realization, all parameter values in I-V model can be obtained rapidly and accurately, substantially increase the efficiency of GaN HEMT device modeling.
The object of the invention is to overcome the deficiencies in the prior art, a kind of parameter extracting method of GaN HEMT device I-V model is provided, enable GaN HEMT large signal equivalent circuit model reflect electrology characteristic and the microwave property of device more accurately.
The present invention adopts the modified Angelov I-V model of GaN HEMT to carry out parameter extraction, paper (the KS Yuk that the people such as the Kelvin S.Yuk of the visible California university of correlative detail of model delivered in 2009, GR Branner, DJ McQuate. " A Wideband Multiharmonic Empirical Large-Signal Model for High-Power GaN HEMTs WithSelf-Heating and Charge-Trapping Effects ", IEEE Trans.Microwave Theory Tech, 2009, vol.57, no.12, pp.3322-3332, 2009.).
The present invention specifically adopts following technical scheme:
An extracting method for GaN high electron mobility transistor I-V model parameter, its flow process as shown in Figure 1, wherein adopts matching device at each drain voltage V
dsunder I-V transfer characteristic curve, and non-traditional ginseng method matching output characteristic curve of carrying, this makes the independent variable in fit procedure only have grid voltage V
gs, decrease independent variable number, reduce matching difficulty and improve fitting precision, specifically comprising the following steps:
Step 1. parameter piecemeal: the concrete form carried out after piecemeal I-V model parameter is as follows:
I
ds＝I
pkth(1+M
ipk(V
ds,V
gseff)·tanh(Ψ(V
ds,V
gseff)))·tanh(αV
ds) (1)
M
ipk(V
ds,V
gseff)＝1+0.5·(M
ipkbth(V
ds)-1)·(1+tanh(Q
m(V
ds)·(V
gseff-V
gsm))) (2)
Ψ(V
ds,V
gseff)＝P
1,th(V
ds)·(V
gseff-V
1,pk)+P
2,th(V
ds)·(V
gseff-V
2,pk)
2+P
3,th·(V
gseff-V
3,pk)
3(3)
I
pkth＝I
pk·(1+K
Ipk(V
ds)·ΔT) (4)
M
ipkbth(V
ds)＝M
ipkb(V
ds)·(1+K
Mipkb(V
ds)·ΔT) (5)
P
j,th(V
ds)＝P
j(V
ds)·(1+K
j,P(V
ds)·ΔT)，j＝1,2,3 (6)
V
gseff＝f(V
gs,V
ds,V
dsq,V
gsq) (7)
ΔT＝P
diss·R
theq＝I
ds·V
ds·R
theq(8)
Wherein, I
dsfor dram-source voltage; I
pkthfor device transconductance maximum time electric current; M
ipk(V
ds, V
gseff) be I
pkthtanh multiplier, be used for characterizing the asymmetric property of GaN HEMT mutual conductance; V
gseff(V
gs, V
ds, V
dsq, V
gsq) for characterizing the equivalent grid voltage of trap effect, it is dram-source voltage V
ds, grid-source voltage V
gs, dram-source voltage quiescent bias point V
dsq, grid-source voltage quiescent bias point V
gsqfunction, its expression can choose suitable form according to demand; Ψ (V
ds, V
gseff) be multinomial series centered by grid voltage when mutual conductance is maximum; α is saturation voltage parameter; I
pkfor I
pkthself-heating effect independent component; K
ipk(V
ds), K
mipkb(V
ds), K
1, P(V
ds), K
2, P(V
ds), K
3, P(V
ds) for characterizing the continuous item of self-heating effect, these five are dram-source voltage V
dsfunction, its expression can choose suitable form according to demand; Δ T is device channel temperature increment, and it equals dissipated power P
disswith equivalent thermal resistance R
theqproduct; M
ipkbth(V
ds) and Q
m(V
ds) be M
ipk(V
ds, V
gseff) intermediate variable of expression formula inside, wherein M
ipkb(V
ds) be M
ipkbth(V
ds) self-heating effect independent component; P
j, th(V
ds) be Ψ (V
ds, V
gseff) polynomial coefficient, wherein, j=1,2,3; P
j(V
ds) be P
j, th(V
ds) self-heating effect independent component; V
gsm, V
1, pk, V
2, pk, V
3, pkfor the grid voltage parameter of corresponding mutual conductance peak value;
Step 2. extracts the model parameter had nothing to do with self-heating effect and trap effect: for the transistor needing extracting parameter, at its source ground, dram-source voltage quiescent bias point V
dsq=0V, grid-source voltage quiescent bias point V
gsqunder the pulse test condition of=-3V, obtain the current-voltage of device and the transfer characteristic curve of I-V, and now the self-heating effect of device and trap effect correlation parameter can be ignored, by curve, matching is carried out in the equation (1) described in the pulse I-V transfer characteristic curve of gained and step 1, (2), (3), obtain the model parameter had nothing to do with self-heating effect and trap effect in equation (1), (2), (3): I
pk, α, V
gsm, V
1, pk, V
2, pk, V
3, pk, M
ipkb(V
ds), Q
m(V
ds), P
1(V
ds), P
2(V
ds), P
3(V
ds);
Step 3. extracts the relevant model parameter of self-heating effect: be static I-V to transistor and test, and utilize Function Fitting method to obtain dissipated power P
disswith V
dsand V
gsfor the expression of independent variable; Carry out pulse I-V test to transistor, the data obtained can extract the equivalent thermal resistance R of device
theq, bring the expression that formula (8) can obtain channel temperature increment Delta T into;
The static I-V data that this step records can obtain static I
ds-V
gstransfer characteristic curve, utilizes curve-fitting method equation (4), (5), (6) and described static I
ds-V
gstransfer characteristic curve carries out matching, obtains the model parameter that in equation (4), (5), (6), self-heating effect is relevant: K
ipk(V
ds), K
mipkb(V
ds), K
1, P(V
ds), K
2, P(V
ds), K
3, P(V
ds);
Step 4. extracts the relevant model parameter of trap effect: for the transistor needing extracting parameter, at its source ground, dram-source voltage quiescent bias point V
dsq=0V, grid-source voltage quiescent bias point V
gsqcarry out pulse I-V under the condition of=-3V and test to obtain pulse I-V curve, and at its source ground, dram-source voltage quiescent bias point V
dsq=0V, grid-source voltage quiescent bias point V
gsqcarry out pulse I-V under the condition of=0V and test to obtain pulse I-V curve; Except trap effect correlation parameter V in equation (1) ~ (8) that integrating step 2 and step 3 have been tried to achieve
gseffouter all parameters, adopt curve-fitting method that two group pulse I-V curve and equations (7) of this step gained are carried out matching, can obtain with V
gs, V
ds, V
dsq, V
gsqthese four parameters are the model parameter V that the trap effect of variable is relevant
gseffexpression, finally realize the extraction of all I-V model parameters of test transistor.
The invention has the beneficial effects as follows:
First, parameter extracting method of the present invention have employed the thought that piecemeal extracts, by carrying out piecemeal to model parameter, both the complexity of I-V model had been reduced, meet again the Physical Mechanism of devices function, make to extract the model parameter value obtained and there is correct physical significance, accurately can reflect the duty of device;
The second, parameter extracting method of the present invention adopts matching device at each drain voltage V
dsunder I-V transfer characteristic curve, and unorthodox method matching output characteristic curve, this makes the independent variable in fit procedure only have grid voltage V
gs, decrease independent variable number, reduce matching difficulty and improve fitting precision;
3rd, parameter extracting method of the present invention can be used for multi-form I-V model, widely applicable, portable good, can meet engineering technical personnel and revise I-V model equation according to actual needs but the requirement not changing parameter extracting method;
4th, parameter extracting method of the present invention can in Matlab programming realization, program once runs all parameter values that can obtain I-V model, compared with traditional parameters extracting method, greatly reduces workload, significantly improves organs weight efficiency.
Accompanying drawing explanation
Fig. 1 is the inventive method I-V model parameter extraction process flow diagram.
Fig. 2 is the process flow diagram extracting self-heating effect and trap effect independent parameter.
Fig. 3 is at each dram-source voltage V
dsunder with dram-source voltage V
gsfor horizontal ordinate, drain current I
dsfor the I of ordinate
ds-V
gscurve.
Fig. 4 is function M
ipkb(V
ds), Q
m(V
ds), P
1(V
ds), P
2(V
ds), P
3(V
ds) fitting effect.
Fig. 5 is the process flow diagram extracting self-heating effect correlation parameter.
Fig. 6 is dissipated power P
dissfitting of a polynomial design sketch.
Fig. 7 is function K
ipk(V
ds), K
mipkb(V
ds), K
1, P(V
ds), K
2, P(V
ds), K
3, P(V
ds) fitting effect.
Fig. 8 extracts the static I-V curve design sketch after obtaining all I-V model parameters.
Embodiment
Below with the parameter M specialized
ipkb(V
ds), Q
m(V
ds), P
1(V
ds), P
2(V
ds), P
3(V
ds), K
ipk(V
ds), K
mipkb(V
ds), K
1, P(V
ds), K
2, P(V
ds), K
3, P(V
ds), V
gseffv=f (V
gs, V
ds, V
dsq, V
gsq) expression formula be example, and by reference to the accompanying drawings the present invention to be described in further detail.
The concrete steps of GaN high electron mobility transistor I-V model parameter extraction method provided by the invention are as follows:
Step 1. parameter piecemeal:
The concrete form carried out after piecemeal I-V model parameter is as follows:
I
ds＝I
pkth(1+M
ipk(V
ds,V
gseff)·tanh(Ψ(V
ds,V
gseff)))·tanh(αV
ds) (1)
M
ipk(V
ds,V
gseff)＝1+0.5·(M
ipkbth(V
ds)-1)·(1+tanh(Q
m(V
ds)·(V
gseff-V
gsm))) (2)
Ψ(V
ds,V
gseff)＝P
1,th(V
ds)·(V
gseff-V
1,pk)+P
2,th(V
ds)·(V
gseff-V
2,pk)
2+P
3,th·(V
gseff-V
3,pk)
3(3)
I
pkth＝I
pk·(1+K
Ipk(V
ds)·ΔT) (4)
M
ipkbth(V
ds)＝M
ipkb(V
ds)·(1+K
Mipkb(V
ds)·ΔT) (5)
P
j,th(V
ds)＝P
j(V
ds)·(1+K
j,P(V
ds)·ΔT)，j＝1,2,3 (6)
V
gseff＝f(V
gs,V
ds,V
dsq,V
gsq) (7)
ΔT＝P
diss·R
theq＝I
ds·V
ds·R
theq(8)
Wherein, I
dsfor dram-source voltage; I
pkthfor device transconductance maximum time electric current; M
ipk(V
ds, V
gseff) be I
pkthtanh multiplier, be used for characterizing the asymmetric property of GaN HEMT mutual conductance; V
gseff(V
gs, V
ds, V
dsq, V
gsq) for characterizing the equivalent grid voltage of trap effect, it is dram-source voltage V
ds, grid-source voltage V
gs, dram-source voltage quiescent bias point V
dsq, grid-source voltage quiescent bias point V
gsqfunction, its expression can choose suitable form according to demand; Ψ (V
ds, V
gseff) be multinomial series centered by grid voltage when mutual conductance is maximum; α is saturation voltage parameter; I
pkfor I
pkthself-heating effect independent component; K
ipk(V
ds), K
mipkb(V
ds), K
1, P(V
ds), K
2, P(V
ds), K
3, P(V
ds) for characterizing the continuous item of self-heating effect, these five are dram-source voltage V
dsfunction, its expression can choose suitable form according to demand; Δ T is device channel temperature increment, and it equals dissipated power P
disswith equivalent thermal resistance R
theqproduct; M
ipkbth(V
ds) and Q
m(V
ds) be M
ipk(V
ds, V
gseff) intermediate variable of expression formula inside, wherein M
ipkb(V
ds) be M
ipkbth(V
ds) self-heating effect independent component; P
j, th(V
ds) be Ψ (V
ds, V
gseff) polynomial coefficient, wherein, j=1,2,3; P
j(V
ds) be P
j, th(V
ds) self-heating effect independent component; V
gsm, V
1, pk, V
2, pk, V
3, pkfor the grid voltage parameter of corresponding mutual conductance peak value;
Step 2. extracts the parameter irrelevant with self-heating effect and trap effect, its flow process as shown in Figure 2:
Step 2-1: under room temperature (22 DEG C), pulse I-V test is carried out to GaN HEMT device: the source ground of GaN HEMT device, the static bias voltage V of gate-to-source
gsq=-3V, the static bias voltage V of Drain-Source
dsq=0V; Grid impulse width is 1.2 μ s, and drain electrode pulse width is 1 μ s, and drain electrode pulse daley is 100ns; Scanning grid-source voltage scope be-4V to 0V, interval 0.2V, scanning dram-source voltage scope is 0V to 30V, interval 0.5V;
Step 2-2: under the test condition of step 2-1, the self-heating effect of device and trap effect can be ignored, and the I-V model simplification of device is following form:
I
ds＝I
pk(1+M
ipk(V
ds,V
gs)·tanh(Ψ(V
ds,V
gs)))·tanh(αV
ds) (9)
M
ipk(V
ds,V
gs)＝1+0.5·(M
ipkb(V
ds)-1)·(1+tanh(Q
m(V
ds)·(V
gs-V
gsm))) (10)
Ψ(V
ds,V
gs)＝P
1(V
ds)·(V
gs-V
1,pk)+P
2(V
ds)·(V
gs-V
2,pk)
2+P
3·(V
gs-V
3,pk)
3(11)
The pulse I-V test data recorded by step 2-1 can obtain at each dram-source voltage V
dsunder, with dram-source voltage V
gsfor horizontal ordinate, drain current I
dsfor the transfer characteristic curve of ordinate, as shown in Figure 3; For every bar transfer characteristic curve, the V of its correspondence
dsfor known definite value, the M thus in I-V model
ipkb(V
ds), Q
m(V
ds), P
1(V
ds), P
2(V
ds), P
3(V
ds) etc. with V
dsfor the function of independent variable becomes constant, whole I-V model simplification is with V
gsfor the function of a single variable of independent variable, and then reduce matching difficulty;
Step 2-3: adopt least square method that matching is carried out with the every bar transfer characteristic curve described in step 2-2 in equation (9), (10), (11), obtain function M
ipkb(V
ds), Q
m(V
ds), P
1(V
ds), P
2(V
ds), P
3(V
ds) at each V
dsunder discrete value, and constant I
pk, α, V
gsm, V
1, pk, V
2, pkand V
3, pkvalue;
Step 2-4: to the function M obtained in step 2-3
ipkb(V
ds), Q
m(V
ds), P
1(V
ds), P
2(V
ds), P
3(V
ds) at each V
dsunder discrete value, use least square method respectively matching obtain function M
ipkb(V
ds), Q
m(V
ds), P
1(V
ds), P
2(V
ds), P
3(V
ds) with V
dsfor the expression formula of independent variable, described in specific as follows, its corresponding fitting effect as shown in Figure 4:
M
ipkb(V
ds)＝(P
M0+P
M1V
ds+P
M2V
ds 2+P
M3V
ds 3)tanh(α
MV
ds)+P
Mo(12)
Q
M(V
ds)＝(P
Q0+P
Q1V
ds)tanh(α
QV
ds)+P
Qo(13)
P
j(V
ds)＝j(P
j，0+P
j，1V
ds)tanh(α
Pj)+P
j,c,j＝1,2,3 (14)
Wherein, P
m0, P
m1, P
m2, P
m3for M
ipkb(V
ds) about V
dsthe multinomial coefficient launched, α
mfor M
ipkb(V
ds) voltage saturation parameter, P
mofor M
ipkb(V
ds) modifying factor; P
q0, P
q1for Q
m(V
ds) about V
dsthe multinomial coefficient launched, α
qfor Q
m(V
ds) voltage saturation parameter, P
qofor Q
m(V
ds) modifying factor; P
j, 0, P
j, 1for P
j(V
ds) about V
dsthe multinomial coefficient launched, α
pjfor P
j(V
ds) saturation voltage parameter, P
j,cfor P
j(V
ds) modifying factor, j=1,2,3;
Step 3. extracts the relevant parameter of self-heating effect, its flow process as shown in Figure 5:
Step 3-1: static I-V is done to GaN HEMT device and tests: the source ground of GaN HEMT device, the scanning voltage scope of gate-to-source be-4V to 0V, interval 0.2V, the scanning voltage scope of Drain-Source is 0V to 30V, interval 0.5V;
Step 3-2: choose more than one probe temperature higher than room temperature, such as, carry out pulse I-V test to GaNHEMT device respectively: the source ground of GaN HEMT device at 55 DEG C, 85 DEG C and 115 DEG C, the static bias voltage V of gate-to-source
gsq=0V, the static bias voltage V of Drain-Source
dsq=0V; Grid impulse width is 1.2 μ s, and drain electrode pulse width is 1 μ s, and drain electrode pulse daley is 100ns; Scanning grid-source voltage scope be-4V to 0V, interval 0.2V, scanning dram-source voltage scope is 0V to 30V, interval 0.5V;
Step 3-3: by the pulse I-V test data obtained in step 3-2, the method adopting the people such as A.M.Darwish to propose extracts the equivalent thermal resistance R obtaining GaN HEMT device
theq(A.M.Darwish, A.Bayba, and H.A.Hung, " Thermalresistance calculation of AIGaN/GaN devices ", IEEE Trans.Microwave Theory Tech., vol.52, no.11, pp.2611-2620,2004);
Step 3-4: owing to containing the I not putting forward ginseng completely in the channel temperature increment Delta T in formula (8)
ds, after Δ T being substituted into I-V model according to traditional ginseng method of carrying, I-V model can be made to become nested recursive form, greatly add and put forward ginseng difficulty; For avoiding the I-V model occurring nested recursive form, the static I-V test data that the present invention utilizes step 3-1 to obtain, calculates at each V
dsand V
gsunder dissipated power value P
diss=I
dsv
ds, and adopt Polynomial curve-fit dissipated power P
dissobtain with V
dsand V
gsfor the P of independent variable
dissexpression, then by P
dissexpression substitute into formula (8) to the expression of channel temperature increment Delta T, P
dissfitting effect as shown in Figure 6;
Step 3-5: the static I-V test data recorded by step 3-1 can obtain at each dram-source voltage V
dsunder with dram-source voltage V
gsfor horizontal ordinate, drain current I
dsfor the transfer characteristic curve of ordinate; For described in this step often with bar transfer characteristic curve, the V of its correspondence
dsfor known definite value, the K thus in I-V model
ipk(V
ds), K
mipkb(V
ds), K
1, P(V
ds), K
2, P(V
ds), K
3, P(V
ds), wait with V
dsfor the self-heating effect related function of independent variable becomes constant, whole I-V model simplification is with V
gsfor the function of a single variable of independent variable, and then reduce matching difficulty;
Step 3-6: the model parameter irrelevant with trap effect and self-heating effect step 2 obtained substitutes into I-V model, adopt least square method that matching is carried out with each transfer characteristic curve in step 3-5 in equation (4), (5), (6), obtain at each V
dsunder, function K
ipk(V
ds), K
mipkb(V
ds), K
1, P(V
ds), K
2, P(V
ds), K
3, P(V
ds) discrete value;
Step 3-7: to the function K obtained in step 3-6
ipk(V
ds), K
mipkb(V
ds), K
p1(V
ds), K
p2(V
ds), K
p3(V
ds) at each V
dsunder discrete value, use least square method respectively matching obtain function K
ipk(V
ds), K
mipkb(V
ds), K
1, P(V
ds), K
2, P(V
ds), K
3, P(V
ds) with V
dsfor the expression formula of independent variable, described in specific as follows, its corresponding fitting effect as shown in Figure 7:
K
Ipk(V
ds)＝(K
Ipk0+K
Ipk1V
ds)tanh(α
KIpkV
ds)+K
Ipko(15)
K
Mipkb(V
ds)＝(K
KMipkb0+K
Mipkb1V
ds)tanh(α
KMipkbkV
ds)+K
Mipkbo(16)
K
j,P(V
ds)＝(K
j,P0+K
j,P1V
ds)tanh(α
j,KPV
ds)+K
j,Pf,j＝1,2,3 (17)
Wherein, K
ipk0, K
ipk1for K
ipk(V
ds) about V
dsthe multinomial coefficient launched, α
kIpkfor K
ipk(V
ds) voltage saturation parameter, K
ipkofor K
ipk(V
ds) modifying factor; K
mipkb0, K
mipkb1for K
mipkb(V
ds) about V
dsthe multinomial coefficient launched, α
kMipkbfor K
mipkb(V
ds) voltage saturation parameter, K
mipkbofor K
mipkb(V
ds) modifying factor; K
j, P0, K
j, P1for K
j,P(V
ds) about V
dsthe multinomial coefficient launched, α
j, KPfor K
j,P(V
ds) voltage saturation parameter, K
j, Pffor K
j,P(V
ds) modifying factor;
Step 4. extracts trap effect correlation parameter:
Step 4-1: under room temperature (22 DEG C), pulse I-V is done to GaN HEMT device and test: the source ground of GaN HEMT device, the static bias voltage V of gate-to-source
gsq=0V, the static bias voltage V of Drain-Source
dsq=0V, grid impulse width is 1.2 μ s, and drain electrode pulse width is 1 μ s, and drain electrode pulse daley is 100ns, scanning grid-source voltage scope be-4V to 0V, interval 0.2V, scanning dram-source voltage scope is 0V to 30V, interval 0.5V;
Step 4-2: under room temperature (22 DEG C), pulse I-V is done to GaN HEMT device and test: the source ground of GaN HEMT device, the static bias voltage V of gate-to-source
gsq=-3V, the static bias voltage V of Drain-Source
dsq=20V, grid impulse width is 1.2 μ s, and drain electrode pulse width is 1 μ s, and drain electrode pulse daley is 100ns, scanning grid-source voltage scope be-4V to 0V, interval 0.2V, scanning dram-source voltage scope is 0V to 30V, interval 0.5V;
Step 4-3: the I-V model parameter obtained in integrating step 2 and step 3, adopts in least square fitting step 2-1, step 4-1 and step 4-2 and measures the pulse I-V curve obtained, can obtain with V
gs, V
ds, V
dsq, V
gsqthese four parameters are the model parameter V relevant to trap effect of variable
gseffexpression formula, described in specific as follows:
V
gseff＝V
gs+γ
surf1(V
gsq-V
gsqpinch)(V
gs-V
gsqpinch)+γ
subs1(V
dsq+V
dssubs0)(V
ds-V
dsq) (18)
Wherein, four parameter γ
surf1,v
gsqpinch,γ
subs1,v
dssubs0by being known constant after curve, γ
surf1for surface trap modulation parameter, V
gsqpinchfor pinch-off voltage, γ
subs1for buffering trap modulation parameter, V
dssubs0for dram-source voltage quiescent bias point modifying factor.
Complete above all parameter values namely obtaining I-V model in steps afterwards, Figure 8 shows that and extract the static I-V curve design sketch after obtaining all I-V model parameters.
It should be noted that, the form that embodies that in this embodiment, equation (12) ~ (18) adopt can be revised according to practical application, and is not limited to the expression formula of this embodiment use.
Claims (7)
1. an extracting method for GaN high electron mobility transistor I-V model parameter, specifically comprises the following steps:
Step 1. parameter piecemeal: the concrete form carried out after piecemeal I-V model parameter is as follows:
I
ds＝I
pkth(1+M
ipk(V
ds,V
gseff)·tanh(Ψ(V
ds,V
gseff)))·tanh(αV
ds) (1)
M
ipk(V
ds,V
gseff)＝1+0.5·(M
ipkbth(V
ds)-1)·(1+tanh(Q
m(V
ds)·(V
gseff-V
gsm))) (2)
Ψ(V
ds,V
gseff)＝P
1,th(V
ds)·(V
gseff-V
1,pk)+P
2,th(V
ds)·(V
gseff-V
2,pk)
2+P
3,th·(V
gseff-V
3,pk)
3(3)
I
pkth＝I
pk·(1+K
Ipk(V
ds)·ΔT) (4)
M
ipkbth(V
ds)＝M
ipkb(V
ds)·(1+K
Mipkb(V
ds)·ΔT) (5)
P
j,th(V
ds)＝P
j(V
ds)·(1+K
j,P(V
ds)·ΔT)，j＝1,2,3 (6)
V
gseff＝f(V
gs,V
ds,V
dsq,V
gsq) (7)
ΔT＝P
diss·R
theq＝I
ds·V
ds·R
theq(8)
Wherein, I
dsfor dram-source voltage; I
pkthfor device transconductance maximum time electric current; M
ipk(V
ds, V
gseff) be I
pkthtanh multiplier, be used for characterizing the asymmetric property of GaN HEMT mutual conductance; V
gseff(V
gs, V
ds, V
dsq, V
gsq) for characterizing the equivalent grid voltage of trap effect, it is dram-source voltage V
ds, grid-source voltage V
gs, dram-source voltage quiescent bias point V
dsq, grid-source voltage quiescent bias point V
gsqfunction, its expression can choose suitable form according to demand; Ψ (V
ds, V
gseff) be multinomial series centered by grid voltage when mutual conductance is maximum; α is saturation voltage parameter; I
pkfor I
pkthself-heating effect independent component; K
ipk(V
ds), K
mipkb(V
ds), K
1, P(V
ds), K
2, P(V
ds), K
3, P(V
ds) for characterizing the continuous item of self-heating effect, these five are dram-source voltage V
dsfunction, its expression can choose suitable form according to demand; Δ T is device channel temperature increment, and it equals dissipated power P
disswith equivalent thermal resistance R
theqproduct; M
ipkbth(V
ds) and Q
m(V
ds) be M
ipk(V
ds, V
gseff) intermediate variable of expression formula inside, wherein M
ipkb(V
ds) be M
ipkbth(V
ds) self-heating effect independent component; P
j, th(V
ds) be Ψ (V
ds, V
gseff) polynomial coefficient, wherein, j=1,2,3; P
j(V
ds) be P
j, th(V
ds) self-heating effect independent component; V
gsm, V
1, pk, V
2, pk, V
3, pkfor the grid voltage parameter of corresponding mutual conductance peak value;
Step 2. extracts the model parameter had nothing to do with self-heating effect and trap effect: for the transistor needing extracting parameter, at its source ground, dram-source voltage quiescent bias point V
dsq=0V, grid-source voltage quiescent bias point V
gsqunder the pulse test condition of=-3V, obtain the current-voltage of device and the transfer characteristic curve of I-V, now the self-heating effect of device and trap effect correlation parameter can be ignored; By curve, matching is carried out in the equation (1) described in the pulse I-V transfer characteristic curve of gained and step 1, (2), (3), obtain the model parameter had nothing to do with self-heating effect and trap effect in equation (1), (2), (3): I
pk, α, V
gsm, V
1, pk, V
2, pk, V
3, pk, M
ipkb(V
ds), Q
m(V
ds), P
1(V
ds), P
2(V
ds), P
3(V
ds);
Step 3. extracts the relevant model parameter of self-heating effect: be static I-V to transistor and test, and utilize Function Fitting method to obtain dissipated power P
disswith V
dsand V
gsfor the expression of independent variable; Carry out pulse I-V test to transistor, the data obtained can extract the equivalent thermal resistance R of device
theq, bring the expression that formula (8) can obtain channel temperature increment Delta T into;
The static I-V data that this step records can obtain static I
ds-V
gstransfer characteristic curve, utilizes curve-fitting method equation (4), (5), (6) and described static I
ds-V
gstransfer characteristic curve carries out matching, obtains the model parameter that in equation (4), (5), (6), self-heating effect is relevant: K
ipk(V
ds), K
mipkb(V
ds), K
1, P(V
ds), K
2, P(V
ds), K
3, P(V
ds);
Step 4. extracts the relevant model parameter of trap effect: for the transistor needing extracting parameter, at its source ground, dram-source voltage quiescent bias point V
dsq=0V, grid-source voltage quiescent bias point V
gsqcarry out pulse I-V under the condition of=-3V and test to obtain pulse I-V curve, and at its source ground, dram-source voltage quiescent bias point V
dsq=0V, grid-source voltage quiescent bias point V
gsqcarry out pulse I-V under the condition of=0V and test to obtain pulse I-V curve; Except trap effect correlation parameter V in equation (1) ~ (8) that integrating step 2 and step 3 have been tried to achieve
gseffouter all parameters, adopt curve-fitting method that two group pulse I-V curve and equations (7) of this step gained are carried out matching, can obtain with V
gs, V
ds, V
dsq, V
gsqthese four parameters are the model parameter V that the trap effect of variable is relevant
gseffexpression, finally realize the extraction of all I-V model parameters of test transistor.
2. the extracting method of GaN high electron mobility transistor I-V model parameter according to claim 1, it is characterized in that, the extraction described in step 2 specifically comprises the following steps with the process of the parameter that self-heating effect and trap effect have nothing to do:
Step 2-1: pulse I-V test is carried out to GaN HEMT device: the source ground of device, the static bias voltage V of gate-to-source
gsq=-3V, the static bias voltage V of Drain-Source
dsq=0V;
Step 2-2: under the test condition of step 2-1, the self-heating effect of device and trap effect can be ignored, and the I-V model simplification of device is following form:
I
ds＝I
pk(1+M
ipk(V
ds,V
gs)·tanh(Ψ(V
ds,V
gs)))·tanh(αV
ds) (9)
M
ipk(V
ds,V
gs)＝1+0.5·(M
ipkb(V
ds)-1)·(1+tanh(Q
m(V
ds)·(V
gs-V
gsm))) (10)
Ψ(V
ds,V
gs)＝P
1(V
ds)·(V
gs-V
1,pk)+P
2(V
ds)·(V
gs-V
2,pk)
2+P
3·(V
gs-V
3,pk)
3(11)
The pulse I-V test data recorded by step 2-1 can obtain at each dram-source voltage V
dsunder, with dram-source voltage V
gsfor horizontal ordinate, drain current I
dsfor the transfer characteristic curve of ordinate; For every bar transfer characteristic curve, the V of its correspondence
dsfor known definite value, the M thus in I-V model
ipkb(V
ds), Q
m(V
ds), P
1(V
ds), P
2(V
ds), P
3(V
ds) etc. with V
dsfor the function of independent variable becomes constant, whole I-V model simplification is with V
gsfor the function of a single variable of independent variable;
Step 2-3: adopt curve-fitting method that matching is carried out with each transfer characteristic curve described in step 2-2 in equation (9), (10), (11), obtain function M
ipkb(V
ds), Q
m(V
ds), P
1(V
ds), P
2(V
ds), P
3(V
ds) at each V
dsunder discrete value, and constant I
pk, α, V
gsm, V
1, pk, V
2, pkand V
3, pkvalue;
Step 2-4: to the function M obtained in step 2-3
ipkb(V
ds), Q
m(V
ds), P
1(V
ds), P
2(V
ds), P
3(V
ds) at each V
dsunder discrete value, use Function Fitting method respectively matching obtain function M
ipkb(V
ds), Q
m(V
ds), P
1(V
ds), P
2(V
ds), P
3(V
ds) with V
dsfor the expression formula of independent variable, described in specific as follows:
M
ipkb(V
ds)＝(P
M0+P
M1V
ds+P
M2V
ds 2+P
M3V
ds 3)tanh(α
MV
ds)+P
Mo(12)
Q
M(V
ds)＝(P
Q0+P
Q1V
ds)tanh(α
QV
ds)+P
Qo(13)
P
j(V
ds)＝(P
j，0+P
j，1V
ds)tanh(α
Pj)+P
j,c,j＝1,2,3 (14)
Wherein, P
m0, P
m1, P
m2, P
m3for M
ipkb(V
ds) about V
dsthe multinomial coefficient launched, α
mfor M
ipkb(V
ds) voltage saturation parameter, P
mofor M
ipkb(V
ds) modifying factor; P
q0, P
q1for Q
m(V
ds) about V
dsthe multinomial coefficient launched, α
qfor Q
m(V
ds) voltage saturation parameter, P
qofor Q
m(V
ds) modifying factor; P
j, 0, P
j, 1for P
j(V
ds) about V
dsthe multinomial coefficient launched, α
pjfor P
j(V
ds) saturation voltage parameter, P
j,cfor P
j(V
ds) modifying factor, j=1,2,3.
3. the extracting method of GaN high electron mobility transistor I-V model parameter according to claim 2, is characterized in that, the process of the extraction self-heating effect correlation parameter described in step 3 specifically comprises the following steps:
Step 3-1: static I-V is done to device and tests;
Step 3-2: pulse I-V test is carried out to device: the source ground of device, the static bias voltage V of gate-to-source
gsq=0V, the static bias voltage V of Drain-Source
dsq=0V;
Step 3-3: by the pulse I-V test data obtained in step 3-2, extracts the equivalent thermal resistance R obtaining device
theq;
Step 3-4: the static I-V test data utilizing step 3-1 to obtain, calculates at each V
dsand V
gsunder dissipated power value P
diss=I
dsv
ds, and adopt Function Fitting method to obtain with V
dsand V
gsfor the P of independent variable
dissexpression, then by P
dissexpression substitute into formula (8) to the expression of channel temperature increment Delta T;
Step 3-5: the static I-V test data recorded by step 3-1 can obtain at each dram-source voltage V
dsunder with dram-source voltage V
gsfor horizontal ordinate, drain current I
dsfor the transfer characteristic curve of ordinate; For the transfer characteristic curve of each described in this step, the V of its correspondence
dsfor known definite value, the K thus in I-V model
ipk(V
ds), K
mipkb(V
ds), K
1, P(V
ds), K
2, P(V
ds), K
3, P(V
ds), wait with V
dsfor the self-heating effect related function of independent variable becomes constant, whole I-V model simplification is with V
gsfor the function of a single variable of independent variable;
Step 3-6: the model parameter irrelevant with trap effect and self-heating effect step 2 obtained substitutes into I-V model, adopt curve-fitting method that matching is carried out with each transfer characteristic curve in step 3-5 in equation (4), (5), (6), obtain at each V
dsunder, function K
ipk(V
ds), K
mipkb(V
ds), K
1, P(V
ds), K
2, P(V
ds), K
3, P(V
ds) discrete value;
Step 3-7: to the function K obtained in step 3-6
ipk(V
ds), K
mipkb(V
ds), K
p1(V
ds), K
p2(V
ds), K
p3(V
ds) at each V
dsunder discrete value, use Function Fitting method respectively matching obtain function K
ipk(V
ds), K
mipkb(V
ds), K
1, P(V
ds), K
2, P(V
ds), K
3, P(V
ds) with V
dsfor the expression formula of independent variable, described in specific as follows:
K
Ipk(V
ds)＝(K
Ipk0+K
Ipk1V
ds)tanh(α
KIpkV
ds)+K
Ipko(15)
K
Mipkb(V
ds)＝(K
KMipkb0+K
Mipkb1V
ds)tanh(α
KMipkbkV
ds)+K
Mipkbo(16)
K
j,P(V
ds)＝(K
j,P0+K
j,P1V
ds)tanh(α
j,KPV
ds)+K
j,Pf,j＝1,2,3 (17)
Wherein, K
ipk0, K
ipk1for K
ipk(V
ds) about V
dsthe multinomial coefficient launched, α
kIpkfor K
ipk(V
ds) voltage saturation parameter, K
ipkofor K
ipk(V
ds) modifying factor; K
mipkb0, K
mipkb1for K
mipkb(V
ds) about V
dsthe multinomial coefficient launched, α
kMipkbfor K
mipkb(V
ds) voltage saturation parameter, K
mipkbofor K
mipkb(V
ds) modifying factor; K
j, P0, K
j, P1for K
j,P(V
ds) about V
dsthe multinomial coefficient launched, α
j, KPfor K
j,P(V
ds) voltage saturation parameter, K
j, Pffor K
j,P(V
ds) modifying factor.
4. the extracting method of GaN high electron mobility transistor I-V model parameter according to claim 3, is characterized in that, the process of the extraction trap effect correlation parameter described in step 4 specifically comprises the following steps:
Step 4-1: pulse I-V is done to device and tests: the source ground of device, the static bias voltage V of gate-to-source
gsq=0V, the static bias voltage V of Drain-Source
dsq=0V;
Step 4-2: pulse I-V is done to device and tests: the source ground of device, the static bias voltage V of gate-to-source
gsq=-3V, the static bias voltage V of Drain-Source
dsq=20V;
Step 4-3: obtain in integrating step 2 and step 3 except V
gseffouter I-V model parameter, and adopt in curve-fitting method fit procedure 2-1, step 4-1 and step 4-2 the pulse I-V curve measured and obtain, can obtain with V
gs, V
ds, V
dsq, V
gsqthese four parameters are the model parameter V relevant to trap effect of variable
gseffexpression formula, described in specific as follows:
Wherein, four parameter γ
surf1, V
gsqpinch, γ
subs1, V
dssubs0by being known constant after curve, γ
surf1for surface trap modulation parameter, V
gsqpinchfor pinch-off voltage, γ
subs1for buffering trap modulation parameter, V
dssubs0for dram-source voltage quiescent bias point modifying factor.
5. the extracting method of GaN high electron mobility transistor I-V model parameter according to claim 4, is characterized in that, described curve-fitting method sum functions approximating method is least square method.
6. the extracting method of GaN high electron mobility transistor I-V model parameter according to claim 4, it is characterized in that, the partial parameters that described pulse I-V tests and static I-V tests all is arranged by following: the source ground of device, the scanning voltage scope of gate-to-source is that-4V is to 0V, its sweep spacing 0.2V, the scanning voltage scope of Drain-Source is 0V to 30V, its sweep spacing 0.5V; The partial parameters that described pulse I-V tests arranges as follows: grid impulse width is 1.2 μ s, and drain electrode pulse width is 1 μ s, and drain electrode pulse daley is 100ns.
7. the extracting method of GaN high electron mobility transistor I-V model parameter according to claim 4, is characterized in that, the pulse I-V test that step 2-1, step 4-1 and step 4-2 carry out all is carried out in identical temperature environment; The environment temperature that the pulse I-V that the environment temperature that pulse I-V described in step 3-2 tests is carried out higher than other steps tests.
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| CN108520084B (en) * | 2018-01-31 | 2020-04-17 | 电子科技大学 | Microwave gallium nitride device nonlinear current model parameter extraction method and system |
| CN108363849A (en) * | 2018-01-31 | 2018-08-03 | 电子科技大学 | A kind of method for extracting thermal resistance and system |
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| CN108416155B (en) * | 2018-03-20 | 2020-03-24 | 电子科技大学 | Microwave gallium nitride device physical-based large signal model establishing method and system |
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| CN109241623B (en) * | 2018-09-06 | 2022-10-14 | 电子科技大学 | Surface potential compact model parameter extraction method |
| CN109884495A (en) * | 2019-04-09 | 2019-06-14 | 浙江大学 | A kind of accurate extraction and prediction technique of transistor ballistic transport efficiency |
| CN112560375A (en) * | 2020-12-22 | 2021-03-26 | 成都华大九天科技有限公司 | Method and device for extracting model parameters, server and storage medium |
| CN117928769A (en) * | 2024-03-21 | 2024-04-26 | 山东大学 | Method for determining channel carrier temperature of gallium nitride device |
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