CN107861042A - A kind of method of testing for Wide Bandgap Semiconductor Power Devices - Google Patents

A kind of method of testing for Wide Bandgap Semiconductor Power Devices Download PDF

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Publication number
CN107861042A
CN107861042A CN201711004816.1A CN201711004816A CN107861042A CN 107861042 A CN107861042 A CN 107861042A CN 201711004816 A CN201711004816 A CN 201711004816A CN 107861042 A CN107861042 A CN 107861042A
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Prior art keywords
door
turn
wide bandgap
bandgap semiconductor
drain
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王文博
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Beijing Union Peoples Semiconductor Technology Co Ltd
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Beijing Union Peoples Semiconductor Technology Co Ltd
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Priority to CN201711004816.1A priority Critical patent/CN107861042A/en
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

The invention discloses a kind of Wide Bandgap Semiconductor Power Devices method of testing, the method for testing comprises the following steps：Opening process performance test；Turn off process performance test；Turn on process performance test；Judge the size of the loss of opening process Wide Bandgap Semiconductor Power Devices and the loss of turn off process Wide Bandgap Semiconductor Power Devices, when turn-on consumption is more than turn-off power loss, the device be suitable for it is soft open-minded, when turn-on consumption be less than in turn-off power loss when, the device is suitable for soft switching.The present invention can be with the influence of parasitic parameter, and measurement result is more accurate, while also remains the advantages of electric method selftest equipment is common, test speed is fast.

Description

A kind of method of testing for Wide Bandgap Semiconductor Power Devices
Technical field
The present invention relates to a kind of method of testing of semiconductor power device, is used for wide bandgap semiconductor more particularly to one kind The method of testing of power device.
Background technology
GaN HEMTs (High Electron Mobility Transistor, write a Chinese character in simplified form HEMT) have The advantages that very high two-dimensional electron gas (2-DEG) concentration, high saturated electrons migration velocity and high-breakdown-voltage so that GaN HEMT device has the incomparable advantage of GaAs devices in microwave power application field.But have very just because of GaN HEMT High power density, about the 5~10 of GaAs pHEMT devices times so that it is in the course of the work caused by power dissipation Self-heating effect is fairly obvious, it is therefore necessary to considers influence of the self-heating effect to device performance.Thermal resistance Rth and thermal capacitance Cth is description Two the most frequently used ther mal network parameters of device heat transfer characteristic, under conditions of known thermal resistance and thermal capacitance, can obtain device junction The warm variation relation with environment temperature and power consumption, so as to the reliability for analysis device characteristic and device.Therefore, GaN The accurate test of HEMT device ther mal network parameter (thermal resistance Rth and thermal capacitance Cth), is device structure design, organs weight and device The important step of part reliability assessment.
The method of conventional measurement device performance mainly has optical method and electric method.Wherein optical method mainly has Raman spectrum Method, emission-type thermal imaging method and infrared thermography etc., this kind of method has several drawbacks in that, first optical test equipment it is complicated and Calibration difficulties, and generally require and (physical contact or optical contact) is contacted with measured device, in measurement GaN HEMT device knots It is not very practical when warm, optical method is difficult to measure thermal capacitance while thermal resistance is measured in addition.The measuring apparatus of electric method is radio frequency The conventional measuring instrument in microwave experiment room, method of testing is flexible, and test speed is fast, mainly there is pulse test method and frequency domain test Two kinds of method.Wherein pulse test method is to be tested using the burst pulse IV under the conditions of different temperatures and quiescent biasing come extractor The thermal resistance of part, measuring method is simple, and test speed is fast, but it is difficult while the thermal capacitance of extraction device；And frequency domain test method is By impedance operator difference of the measurement device under low frequency and high frequency condition, can extraction device simultaneously thermal resistance and thermal capacitance, but this Kind method is difficult the influence for testing stray inductance and dead resistance to device performance.
The content of the invention
Invention aims to overcome that the deficiencies in the prior art, there is provided a kind of wide band gap semiconductor device performance measurement side Method, solve the influence of stray inductance and dead resistance to device performance and circuit performance, the working condition of accurate simulation device Energy.
In view of the above-mentioned problems, a kind of Wide Bandgap Semiconductor Power Devices method of testing of the present invention, the method for testing include with Lower step：
S1：Opening process performance test；
S2：Turn off process performance test；
S3：Turn on process performance test；
S4：Judge loss and the turn off process wide bandgap semiconductor power device of opening process Wide Bandgap Semiconductor Power Devices The size of the loss of part, when turn-on consumption is more than turn-off power loss, the device be suitable for it is soft open-minded, when turn-on consumption be less than in During turn-off power loss, the device is suitable for soft switching.
A kind of described Wide Bandgap Semiconductor Power Devices method of testing, it is characterised in that：The S1 also includes following step Suddenly：
S11：Open delay, electricity on gate voltage, door loop current charges to input capacitance.Door-source voltage rises to door by zero Voltage limit, this step terminate；
S12：Channel current is raised, and the channel current of wide band gap semiconductor device is risen by 0, and drain source voltage is by shut-off electricity Pressure drop is low, and when channel current is increased to open electric current, this stage terminates, and records now drain source voltage value and this step and hold The continuous time；
S13：Drain source voltage reduces, and this stage is stage S13 continuity, and drain source voltage is reduced to conducting resistance and opens electricity Stream, until door source, voltage is increased to stable state：
A kind of described Wide Bandgap Semiconductor Power Devices method of testing, it is characterised in that：The S2 also includes following step Suddenly：
S21：Door-source diode conducting state；
S22：Door-source diode off state；
S23：Door ource electric current is reduced by door-source diode forward voltage；
S24：Drain source voltage rise, record door-drain capacitance charging current drain-source capacitance charging current, channel current, its Middle door-drain capacitance charging current is gate current, and when drain source voltage is increased to Voff, this step terminates；
S25：Channel current declines, and when channel current is reduced to 0, this step terminates, and recording step S21~S25 is passage electricity Flow fall time；
A kind of described Wide Bandgap Semiconductor Power Devices method of testing, it is characterised in that：The S3 also includes following step Suddenly：
S31：Test forward conduction loss；
S32：Test reverse-conducting loss.
Brief description of the drawings
Accompanying drawing is used for providing a further understanding of the present invention, and a part for constitution instruction, the reality with the present invention Apply example to be provided commonly for explaining the present invention, be not construed as limiting the invention.
Fig. 1 is the block diagram of the test device exemplary embodiment of the present invention.
Fig. 2 is the flow chart of the method for testing of the test device of the present invention.
Embodiment
A kind of Wide Bandgap Semiconductor Power Devices test device of the present invention, the test device include wide bandgap semiconductor power Device input interface unit 10, Wide Bandgap Semiconductor Power Devices output interface device 11, power supplier 12, data acquisition Device 13, data storage device 14, data processing equipment 15 and data presentation device 16, the data acquisition device 13 gather together The voltage of Wide Bandgap Semiconductor Power Devices, resistance, electric current and inductance parameters under one operating mode, and data are arrived into above-mentioned parameter storage Storage device 17 forms Wide Bandgap Semiconductor Power Devices parameter series to be tested.
The data processing equipment 15 has virtual equivalent circuit module and parasitic parameter module, described virtual equivalent electric Road module can simulate the Wide Bandgap Semiconductor Power Devices circuit to be accessed, and described parasitic parameter module, which can be simulated, to be treated Test parasitic capacitance and stray inductance caused by the Wide Bandgap Semiconductor Power Devices circuit to be accessed.
The parameter that the data acquisition device 13 gathers includes：Turning-on voltage, gate pole inductance, door-source voltage, shut-off electricity Pressure, drain electrode inductance, door-drain voltage, open electric current, source inductance, drain source voltage, cut-off current, door-source electric capacity, mutual conductance, lead Be powered resistance, door-drain capacitance, working frequency, threshold voltage, drain-source electric capacity, door-source coupling inductance, gate voltage, the pole of door-source two Pipe, door-leakage coupling inductance, source-leakage diode, open gate resistor, drain-source coupling inductance, shut-off gate resistor, input capacitance, door- Source diode forward voltage, output capacitance, door-source steady state voltage, conducting effective current.
The parameter that the data presentation device 16 is shown includes：Door-source voltage, gate pole inductive drop, channel current, door- Drain voltage, drain electrode inductive drop, door-drain capacitance charging current, drain source voltage, source inductance voltage, drain-source current, on electric current Rise stage losses, the loss of voltage ascent stage, forward conduction is lost, the voltage decline stage is lost, the electric current decline stage is lost, anti- To conduction loss, reverse-conducting pressure drop, reverse-conduction current, reverse-conducting duration, door-ource electric current, turn-on consumption, shut-off damage Consumption.
The data processing equipment 15 also includes having curve plotter.
The acquisition parameter title of data acquisition device 13 and symbol are as shown in the table：
Parameter name and symbol are as shown in the table shown by the data presentation device：
The testing procedure of the wide bandgap semiconductor test device is as follows：
S1：Opening process
Stage I opens delay
Gate voltage VgUpper electricity, door loop current is to input capacitance CissCharging.Door-source voltage rises to threshold voltage V by zeroth, This stage terminates.
Stage II channel current raises
GaN HEMT channel currents are risen by 0, and drain source voltage is reduced by Von.
ich(t)=gfs[vgs-vth] (3)
GaN HEMT channel currents are increased to open electric current IonWhen, this stage terminates, and drain source voltage is this moment Caused corresponding loss calculation：
tirFor institute's duration this stage.
Stage III drain source voltage reduces
This stage is stage II continuity, and channel current still strictly observes formula (3).Drain source voltage byReduce To RdsonIon, the calculating of this stage losses
Door source voltage is increased to stable state：
S2：Turn off process
Stage V turn-off delay
Sub-stage V.1 door-source diode conducting state
Sub-stage V.2 door-source diode off state
Door ource electric current is reduced to formula (11) by VgsD
Stage VI drain source voltage rises
Cut-off current is divided into three parts：Door-drain capacitance charging currentDrain-source capacitance charging currentChannel current ich。
Wherein door-drain capacitance charging current is gate current.
When drain source voltage is increased to Voff, this stage terminates, caused loss：
Stage VII channel current declines
When channel current is reduced to 0, this sub-stage terminates, and produced loss is
tif chFor channel current fall time
S3：Turn on process
Forward conduction is lost
Reverse-conducting is lost
Judgement and conclusion
Loss distribution
Pon=Pir+Pvf (19)
Poff=Pvr+Pif (20)
If Pon＞ Poff, then suitable for soft open-minded；If Pon＜ Poff, then Wide Bandgap Semiconductor Power Devices be applied to Soft switching.
Embodiment described above only represents the several embodiments of the present invention, and its description is more specific and detailed, but not It is understood that as limitation of the scope of the invention.It should be pointed out that for the person of ordinary skill of the art, do not departing from On the premise of present inventive concept, various modifications and improvements can be made, these belong to the scope of the present invention.Therefore this hair Bright protection domain should be defined by the claim.

Claims (4)

1. a kind of Wide Bandgap Semiconductor Power Devices method of testing, the method for testing comprise the following steps：
S1：Opening process performance test；
S2：Turn off process performance test；
S3：Turn on process performance test；
S4：Judge loss and the turn off process Wide Bandgap Semiconductor Power Devices of opening process Wide Bandgap Semiconductor Power Devices The size of loss, when turn-on consumption is more than turn-off power loss, the device be suitable for it is soft open-minded, when turn-on consumption be less than in shut-off During loss, the device is suitable for soft switching.
A kind of 2. Wide Bandgap Semiconductor Power Devices method of testing according to claim 1, it is characterised in that：The S1 is also Comprise the following steps：
S11：Open delay, electricity on gate voltage, door loop current charges to input capacitance.Door-source voltage rises to thresholding electricity by zero Pressure, this step terminate；
S12：Channel current is raised, and the channel current of wide band gap semiconductor device is risen by 0, and drain source voltage is by shut-off voltage drop Low, when channel current is increased to open electric current, this stage terminates, and when recording that now drain source voltage value and this step continue Between；
S13：Drain source voltage reduces, and this stage is stage S13 continuity, and drain source voltage is reduced to conducting resistance and opens electric current, Until door source, voltage is increased to stable state.
A kind of 3. Wide Bandgap Semiconductor Power Devices method of testing according to claim 1, it is characterised in that：The S2 is also Comprise the following steps：
S21：Door-source diode conducting state；
S22：Door-source diode off state；
S23：Door ource electric current is reduced by door-source diode forward voltage；
S24：Drain source voltage rise, record door-drain capacitance charging current drain-source capacitance charging current, channel current, wherein door- Drain capacitance charging current is gate current, and when drain source voltage is increased to Voff, this step terminates；
S25：Channel current declines, and when channel current is reduced to 0, this step terminates, and recording step S21~S25 is under channel current Time drops.
A kind of 4. Wide Bandgap Semiconductor Power Devices method of testing according to claim 1, it is characterised in that：The S3 is also Comprise the following steps：
S31：Test forward conduction loss；
S32：Test reverse-conducting loss.
CN201711004816.1A 2017-10-25 2017-10-25 A kind of method of testing for Wide Bandgap Semiconductor Power Devices Pending CN107861042A (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020211326A1 (en) * 2019-04-19 2020-10-22 南京大学 Method for establishing nonlinear segmented time sequence model of high-frequency dynamic loss of gan hemt device
CN112600394A (en) * 2020-12-07 2021-04-02 国网江苏省电力有限公司宿迁供电分公司 Multi-step driving control method of wide bandgap power device
CN112946449A (en) * 2021-01-28 2021-06-11 臻驱科技（上海）有限公司 Power semiconductor device model selection method

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020211326A1 (en) * 2019-04-19 2020-10-22 南京大学 Method for establishing nonlinear segmented time sequence model of high-frequency dynamic loss of gan hemt device
CN112600394A (en) * 2020-12-07 2021-04-02 国网江苏省电力有限公司宿迁供电分公司 Multi-step driving control method of wide bandgap power device
CN112946449A (en) * 2021-01-28 2021-06-11 臻驱科技（上海）有限公司 Power semiconductor device model selection method

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