CN102156253A - Double-pulse test method for IGBT module - Google Patents

Abstract

The invention belongs to the technical field of power semiconductor devices, and particularly relates to a double-pulse test method for an insulated gate bipolar transistor (IGBT) module. On and off of the tested IGBT module can be controlled by adding a driving positive voltage and a negative voltage between the grid and the emitter of the tested IGBT module; and two times of pulse width modulation (PWM) pulse are send to and blocked for the IGBT module, so that the IGBT module is subjected to an on-off-on-off process, the over current bearing capacity of the module and the capacity of mastering the on and off properties of the module are checked, and reference and basis are provided for application of the high-voltage and high-current IGBT module.

Description

A kind of double impulse test method of IGBT module

Technical field

The invention belongs to the power semiconductor device technical field, be specifically related to a kind of double impulse test method of IGBT module.

Background technology

Insulated gate bipolar transistor IGBT belongs to the power semiconductor device technical field, and power semiconductor device is the large power semiconductor device that is used for transformation of electrical energy and controlling electric energy, and the stages such as diode, thyristor, power transistor have been experienced in its development.

Diode claims crystal diode again, is called for short diode (diode), and it only transmits the electronic component of electric current toward a direction.It is a kind of device with 2 terminals of 1 Part No. joint, has the direction according to impressed voltage, and electric current is flowed or immobilising character.Crystal diode is a p-n junction that is formed by p N-type semiconductor N and n N-type semiconductor N, forms space charge layer in both sides at the interface at it, and has built-in field.When not having impressed voltage, the drift current that dissufion current that causes owing to p-n junction both sides carrier concentration difference and built-in field cause equates to be in the electrobalance state.

Diode is uncontrollable device, and most important characteristic is exactly that folk prescription is to conductive characteristic.In circuit, electric current can only flow into from the positive pole of diode, and negative pole flows out.

Thyristor (Thyristor) is the abbreviation of thyratron transistor, can be called silicon controlled rectifier again, is called controllable silicon in the past for short; Nineteen fifty-seven, General Electric Apparatus Co.(U.S.A.) developed first item thyristor product in the world, and in 1958 with its commercialization; Thyristor is a PNPN four-level semiconductor structure, and it has three utmost points: anode, negative electrode and gate pole; Thyristor has the characteristic of silicon rectification device, can work under high voltage, big current condition, and its course of work can control, and is widely used in the electronic circuits such as controlled rectification, AC voltage adjusting, contactless electronic beam switch, inversion and frequency conversion.

Thyristor is a half control type device, and in the course of the work, its anode A is connected with load with power supply with negative electrode K, forms the main circuit of thyristor, and the gate pole G of thyristor is connected with the device of control thyristor with negative electrode K, forms the control circuit of thyristor.

The condition of work of thyristor is:

When 1) thyristor bore reverse anode voltage, no matter which kind of voltage gate pole bears, thyristor all was in off state;

When 2) thyristor bears the forward anode voltage, only bear just conducting of thyristor under the situation of forward voltage at gate pole;

3) thyristor is under the conducting situation, as long as certain forward anode voltage is arranged, no matter gate voltage how, thyristor keeps conducting, i.e. after the thyristor conducting, gate pole is ineffective;

4) thyristor is under the conducting situation, and when main circuit voltage (or electric current) is reduced to when approaching zero, thyristor turn-offs.

With the fastest developing speed with IGBT in the power transistor, IGBT (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor, by the compound full-control type voltage driven type power semiconductor device that BJT (double pole triode) and MOS (insulating gate type field effect tube) form, have the advantage of low conduction voltage drop two aspects of the high input impedance of MOSFET and GTR concurrently.The GTR saturation pressure reduces, and current carrying density is big, but drive current is bigger; The MOSFET driving power is very little, and switching speed is fast, but conduction voltage drop is big, and current carrying density is little.IGBT combines the advantage of above two kinds of devices, little and the saturation pressure of driving power reduces, its frequency characteristic is between MOSFET and power transistor, but operate as normal is in tens kHz frequency ranges, in modern power electronics technology, obtain application more and more widely, in the big or middle power application of upper frequency, occupied leading position.

IGBT is the full-control type device, if add the driving positive voltage between the grid of IGBT and emitter, then MOSFET conducting becomes low resistive state between the transistorized collector of PNP and the base stage like this and makes transistor turns; If voltage is 0V or negative voltage between the grid of IGBT and the emitter, then MOSFET ends, and cuts off the supply of PNP transistor base current, makes transistor end.IGBT is the same with MOSFET also to be voltage-controlled device, applies the driving voltage of tens V between its grid-emitter, has only the leakage current of μ A level to flow through, basically consumed power not.

It is fast that IGBT has switching speed, and conduction voltage drop is low, and driving power is little, and the frequency of operation height is controlled characteristics such as flexible, therefore, has obtained application more and more widely in modern power electronics technology.At present, the IGBT of high voltage, big electric current is modularization, and its driving circuit has now produced the special-purpose driving circuit of integrated IGBT, and its performance is better, and reliability is higher, and volume is littler, meeting dominate in powerful application from now on; Yet, the IGBT module of high-voltage large-capacity also lacks simply so far, reliable dynamic characteristic test means, some testing tools can only the measuring IGBT module static parameter, can't obtain its dynamic characteristic parameter, from now on commercial applications is lacked instructs and reference.

At present, the static characteristics that some testing tools and method of testing can the measuring IGBT modules obtains relevant quiescent operation parameter, can and use for the type selecting of IGBT module certain foundation is provided; For the dynamic perfromance of IGBT module, also lack method of testing preferably.

The IGBT turn off process can be fully observed in the monopulse test, if only need pay close attention to turn off process, then can adopt the monopulse test; Yet in most of power electronic equipment, the inductance value of load is all bigger, closes at IGBT and has no progeny, and inductive current generally can not stop, and diode is afterflow always, opens IGBT at this moment, has the reversely restoring process of diode; And do not have the diode reverse recovery process in the monopulse test, thereby double impulse test is truer than the monopulse test, more realistic duty.

Summary of the invention

In order to overcome the shortcoming of above-mentioned prior art, the present invention proposes a kind of new test method-double impulse test method, compare with other test method, this method has remarkable advantages: circuit is simple, method is reliable, can examine the overcurrent capability and the dynamic perfromance of IGBT module.

The IGBT module is the full-control type device, drive positive voltage and negative voltage by between the grid of IGBT and emitter, adding, both it was open-minded for may command, also its shutoff of may command, send out pwm pulse twice only need for the IGBT module, block pwm pulse twice, make the IGBT module stand to open-turn-off-open-turn off process, just can bear the ability of turn-offing excess current and turn-offing surge voltage by evaluation module, grasp it and turn on and off characteristic, for the application of high voltage, big electric current I GBT module provides reference and foundation.As shown in Figure 1, concrete test method is:

(1) confirmed test circuit;

Determine suitable circuit structure, make the actual working state of its analog insulation grid bipolar transistor IGBT module; The double impulse test circuit of described circuit structure for constituting by the IGBT module, described double impulse test circuit comprises power supply, switch, pressure regulator, transformer, rectifier bridge, direct current capacitors, busbar, heating radiator, reactor, H bridge IGBT module; Described direct current capacitors plays the voltage supporting role, and direct current capacitors is connected with H bridge IGBT module by busbar; H bridge IGBT module is installed on the heating radiator; Power supply is through inserting rectifier bridge behind switch, pressure regulator and the transformer, interchange is transformed into direct current after, direct current capacitors is charged; Reactor is connected to the output terminal of H bridge IGBT module as the inductive load of H bridge IGBT module; Described H bridge IGBT module comprises an IGBT (T1), the 2nd IGBT (T2), the 3rd IGBT (T3) and the 4th IGBT (T4), and wherein the 3rd IGBT (T3) is tested IGBT;

(2), calculate the pulse width of pulse width modulation (PWM) according to hookup and parameter;

After hookup is determined, according to the parameter of element in the circuit, by formula

Calculate the width that tested IGBT reaches the required trigger pulse of desired value;

(3) carry out correct wiring according to hookup;

Carry out wiring according to hookup, the source that Connects Power after the affirmation wiring is errorless, thus guarantee experimental safe;

(4) pulse of the pulse width modulation (PWM) of blockade IGBT module;

With the controller locking, block the trigger pulse of all IGBT in the H bridge IGBT module;

(5) be charged to ratings to direct current capacitors;

Slowly regulate pressure regulator, charge to direct current capacitors by rectifier bridge, until the ratings that reaches direct current capacitors;

(6) disconnect charge circuit;

After direct current capacitors reached ratings, capacitance voltage remained unchanged substantially, and charge circuit is disconnected;

(7) create test condition;

Send out lasting Continuity signal for the 2nd IGBT (T2), the 2nd IGBT (T2) is lasting open-minded;

(8) send the pulse width modulation (PWM) pulse for tested the 3rd IGBT (T3);

With the controller release, according to the pulsewidth time that the method for step (2) calculates, send pwm pulse for tested the 3rd IGBT (T3), make it be in opening state;

(9), block pwm pulse as tested the 3rd IGBT (T3) when reaching load current value;

After tested the 3rd IGBT (T3) opened, direct current capacitors, the 2nd IGBT (T2), load and the 3rd IGBT (T3) constituted the loop, and the electric current in the load is linear to be increased, until the rated current peak I that reaches tested the 3rd IGBT (T3) _M, block pwm pulse, thereby make tested the 3rd IGBT (T3) turn-off;

(10) send pwm pulse for once more after a while tested the 3rd IGBT (T3);

Tested the 3rd IGBT (T3) closes and has no progeny, and load powers on to fail to be convened for lack of a quorum and slightly reduces, and after after a while, calculates the pulsewidth time according to the method for step (2), sends out pwm pulse for once more tested the 3rd IGBT (T3), makes it open-minded;

(11) when tested the 3rd IGBT (T3) reaches the cut-off current value of setting, block pwm pulse;

After tested the 3rd IGBT (T3) opened, the electric current in the load can be at I _MThe basis on continue to be linear and increase, the peak value until reaching the cut-off current that tested the 3rd IGBT (T3) sets blocks pwm pulse, tested the 3rd IGBT (T3) turn-offs once more;

(12) if tested the 3rd IGBT (T3) stands intact in the whole process, then hookup outage;

Specified or be higher than under the rated direct voltage situation, tested the 3rd IGBT (T3) stood to open-turn-off-open-turn-off the process of the test of peak point current after, if tested IGBT module is excellent in the whole process, then hookup outage;

(13) off-test.

The invention has the beneficial effects as follows:

The capacity operation test is adopted in the test of high power module usually, and the test loop is complicated.Under the situation of not considering thermal design, the double impulse test method that can adopt the present invention to propose realizes the voltage of IGBT module, the examination of current electrical stress.In the test, the dipulse width can be regulated, and under the situation of guaranteeing device safety, pulsewidth is decontroled from narrow to wide gradually, until reaching examination peak point current of the present invention.

Provide a kind of brand-new means of testing according to the double impulse test method of IGBT module of the present invention for the IGBT module, had great importance for the commercial applications of module from now on.The hookup of this method is simple, test method reliable, the test risk is low.Can obtain in the IGBT module switch process important technological parameters and associated dynamic and open, turn-off operating characteristic, for the application of high-voltage great-current module provides reference and foundation, solve the application problem of high voltage, big electric current I GBT module.

Description of drawings

The present invention is further described below in conjunction with accompanying drawing.

Fig. 1 illustrates the double impulse test circuit diagram according to method of the present invention;

Fig. 2 illustrates voltage, electric current and the pwm pulse oscillogram according to method of the present invention;

Fig. 3 is the process flow diagram according to method of the present invention.

Embodiment

Method of the present invention specifically may further comprise the steps:

1) carries out the test loop wiring according to test schematic;

2) check that wiring is errorless after, the main circuit energising of closing a floodgate;

3) T1, T4 pipe is in blockage all the time, and the T2 pipe is in opening state, blocks the pwm pulse of tested IGBT (T3 pipe);

4) suppose that capacitor is very big, is charged to ratings U to direct current capacitors _N, capacitance voltage remained unchanged substantially after charging finished;

5) disconnect the rectification charging loop;

6) send out pwm pulse for tested IGBT module (T3 pipe), the T3 conducting, so dc capacitor C, reactor L and upper right IGBT T2 constitute the loop, electric current is linear on the reactor increases, until the peak I that is increased to rated current of devices _M, the waveform when observing its conducting by oscillograph;

7) if the IGBT module does not have any abnormal conditions, block the pwm pulse of tested IGBT, T3 turn-offs, and the diode of reactor L and upper left IGBT module constitutes the loop, and reactor powers on to fail to be convened for lack of a quorum and reduces to some extent; Observe it by oscillograph and turn-off waveform;

8) through after a while, send out pwm pulse for once more tested IGBT T3, T3 is conducting again, and reactor powers on and fails to be convened for lack of a quorum at I _MThe basis on continue to rise, set the peak value of electric current until being increased to device, observe its conducting waveform by oscillograph;

9) if the IGBT module does not have any abnormal conditions, block the pwm pulse of tested IGBT, T3 turn-offs, and observes it by oscillograph and turn-offs waveform;

10) tested IGBT module stood to open-turn-off-open-turn off process after, module is excellent, so far, double impulse test finishes.

Below by specific embodiment method of the present invention is described in detail.The dipulse test platform as shown in Figure 1, hookup is a H bridge circuit structure, tested IGBT module is the pipe parallel connection that two models are FZ1500R33HE3.Isolate probe measurement Vce voltage with high pressure, measure Vge voltage, measure the electric current of pipe with the Luo-coil current probe with ordinary ultrasonic probe.Its voltage, electric current and pwm pulse oscillogram are as shown in Figure 2.

The setting DC bus-bar voltage is 1600V; Setting electric current is the edge 3000A of the safety operation area of IGBT, because two pipe parallel connections, so electric current is got 6000A; Inductance value is chosen 1/3mH.

By

Can get

$I=\frac{U\×t}{L}$

And then draw

$t=\frac{I\×L}{U}=1250\mathrm{\μs}$

As can be seen from Figure 2, make electric current reach 6000A when second pulse-off, then the width sum of two pulses is:

T1+T3＝1250μs

Concrete test procedure is:

(1) carries out the test loop wiring according to hookup Fig. 1;

(2) controller locking, the trigger pulse of all IGBT in the blockade H bridge;

(3) check that wiring is errorless after, the main circuit energising of closing a floodgate;

(4) suppose that capacitor is very big, direct current capacitors is charged to ratings 1600V, capacitance voltage remained unchanged substantially after charging finished;

(5) disconnect the rectification charging loop;

(6) T1, T3 pipe is in blockage all the time, the T2 pipe is in opening state all the time, at t0 constantly, the controller release sends out first pwm pulse, the T3 saturation conduction for tested IGBT module, so dc capacitor C, reactor L and upper right IGBTT2 constitute the loop, electric current is linear on the reactor increases, until the peak value 3000A that is increased to rated current of devices, the waveform when observing its conducting by oscillograph;

(7) if the IGBT module does not have any abnormal conditions, block the pwm pulse of tested IGBT constantly at t1, T3 turn-offs, the diode of reactor L and upper left IGBT module constitutes the loop, reactor powers on to fail to be convened for lack of a quorum and reduces to some extent, as shown in phantom in Figure 2, observes it by oscillograph and turn-offs waveform;

(8) through after a while, send out pwm pulse for once more constantly tested IGBT T3 at t2, T3 is saturation conduction again, and fly-wheel diode enters reverse recovery, and reverse recovery current can pass IGBT, can capture this electric current on current probe, as shown in Figure 2; Reactor powers on to fail to be convened for lack of a quorum and continues to rise on the basis about 3000A, until the peak value 6000A that is increased to 2 times of rated current of devices, and observes its conducting waveform by oscillograph;

(9) if the IGBT module does not have any abnormal conditions, block the pwm pulse of tested IGBT constantly at t3, T3 turn-offs, and this moment, electric current was bigger, because the existence of stray inductance can produce certain due to voltage spikes, and observes it by oscillograph and turn-offs waveform;

(10) tested IGBT module stood to open-turn-off-open-turn off process after, module is excellent, the main circuit outage;

(11) so far, double impulse test finishes.

Invention has been described according to specific exemplary embodiment herein.It will be conspicuous carrying out suitable replacement to one skilled in the art or revise under not departing from the scope of the present invention.Exemplary embodiment only is illustrative, rather than to the restriction of scope of the present invention, scope of the present invention is by appended claim definition.

Claims (1)

1. the double impulse test method of an IGBT module is characterized in that may further comprise the steps:

(1) confirmed test circuit;

Determine suitable circuit structure, make the actual working state of its analog insulation grid bipolar transistor IGBT module; The double impulse test circuit of described circuit structure for constituting by the IGBT module, described double impulse test circuit comprises power supply, switch, pressure regulator, transformer, rectifier bridge, direct current capacitors, busbar, heating radiator, reactor, H bridge IGBT module; Described direct current capacitors plays the voltage supporting role, and direct current capacitors is connected with H bridge IGBT module by busbar; H bridge IGBT module is installed on the heating radiator; Power supply is through inserting rectifier bridge behind switch, pressure regulator and the transformer, interchange is transformed into direct current after, direct current capacitors is charged; Reactor is connected to the output terminal of H bridge IGBT module as the inductive load of H bridge IGBT module; Described H bridge IGBT module comprises an IGBT (T1), the 2nd IGBT (T2), the 3rd IGBT (T3) and the 4th IGBT (T4), and wherein the 3rd IGBT (T3) is tested IGBT;

(2), calculate the pulse width of pulse width modulation (PWM) according to hookup and parameter;

After hookup is determined, according to the parameter of element in the circuit, by formula

Calculate the width that tested IGBT reaches the required trigger pulse of desired value;

(3) carry out correct wiring according to hookup;

Carry out wiring according to hookup, the source that Connects Power after the affirmation wiring is errorless, thus guarantee experimental safe;

(4) pulse of the pulse width modulation (PWM) of blockade IGBT module;

With the controller locking, block the trigger pulse of all IGBT in the H bridge IGBT module;

(5) be charged to ratings to direct current capacitors;

Slowly regulate pressure regulator, charge to direct current capacitors by rectifier bridge, until the ratings that reaches direct current capacitors;

(6) disconnect charge circuit;

After direct current capacitors reached ratings, capacitance voltage remained unchanged substantially, and charge circuit is disconnected;

(7) create test condition;

Send out lasting Continuity signal for the 2nd IGBT (T2), the 2nd IGBT (T2) is lasting open-minded;

(8) send the pulse width modulation (PWM) pulse for tested the 3rd IGBT (T3);

With the controller release, according to the pulsewidth time that the method for step (2) calculates, send pwm pulse for tested the 3rd IGBT (T3), make it be in opening state;

(9), block pwm pulse as tested the 3rd IGBT (T3) when reaching load current value;

After tested the 3rd IGBT (T3) opened, direct current capacitors, the 2nd IGBT (T2), load and the 3rd IGBT (T3) constituted the loop, and the electric current in the load is linear to be increased, until the rated current peak I that reaches tested the 3rd IGBT (T3) _M, block pwm pulse, thereby make tested the 3rd IGBT (T3) turn-off;

(10) send pwm pulse for once more after a while tested the 3rd IGBT (T3);

Tested the 3rd IGBT (T3) closes and has no progeny, and load powers on to fail to be convened for lack of a quorum and slightly reduces, and after after a while, calculates the pulsewidth time according to the method for step (2), sends out pwm pulse for once more tested the 3rd IGBT (T3), makes it open-minded;

(11) when tested the 3rd IGBT (T3) reaches the cut-off current value of setting, block pwm pulse;

After tested the 3rd IGBT (T3) opened, the electric current in the load can be at I _MThe basis on continue to be linear and increase, the peak value until reaching the cut-off current that tested the 3rd IGBT (T3) sets blocks pwm pulse, tested the 3rd IGBT (T3) turn-offs once more;

(12) if tested the 3rd IGBT (T3) stands intact in the whole process, then hookup outage;

Specified or be higher than under the rated direct voltage situation, tested the 3rd IGBT (T3) stood to open-turn-off-open-turn-off the process of the test of peak point current after, if tested IGBT module is excellent in the whole process, then hookup outage;

(13) off-test.

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