CN106291310A - A kind of method of testing utilizing double-pulsed technology test IGBT dynamic switching characteristic and device - Google Patents
A kind of method of testing utilizing double-pulsed technology test IGBT dynamic switching characteristic and device Download PDFInfo
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- CN106291310A CN106291310A CN201610890393.7A CN201610890393A CN106291310A CN 106291310 A CN106291310 A CN 106291310A CN 201610890393 A CN201610890393 A CN 201610890393A CN 106291310 A CN106291310 A CN 106291310A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2608—Circuits therefor for testing bipolar transistors
- G01R31/2617—Circuits therefor for testing bipolar transistors for measuring switching properties thereof
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
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Abstract
The present invention relates to a kind of method of testing utilizing double-pulsed technology test IGBT dynamic switching characteristic and device；Utilizing single-chip microcomputer to send dipulse signal, first pulse makes to test IGBT and reaches rated operational current, and second pulse, for testing the dynamic characteristic of IGBT, utilizes dynamic electric voltage and current parameters that oscillograph and difference isolate IGBT when probe tests switch.Entering IGBT by dipulse signal drives plate realization control IGBT to cut-off within the extremely short time, avoids signal to interfere experimental circuit and test circuit isolation by isolating transformer；Utilization connects isolating transformer oscillograph and the electric current of main circuit and the voltage of IGBT both end voltage drive circuit outfan are measured, by oscillogram under oscillograph recording by difference isolation probe；According to rise and fall time, time delay, switch energy calculates IGBT dynamic switching characteristic parameter size.Reducing the parasitic parameter in circuit, test result is accurate.
Description
Technical field
The present invention relates to a kind of method for fast measuring to igbt (IGBT) dynamic switching characteristic parameter
And device, specifically, relate to being under rated operation, high pressure high-power IGBT (with 1200V, as a example by 150A)
Drive end input dipulse signal realize IGBT and rapidly switch off and turn on, re-use the measurement system pair getting rid of electric power interference
The dynamic characteristic (rise and fall time, rise-fall delay time, switch energy) of IGBT measures.This test system based on
Double-pulsed technology, is optimized the drive circuit of IGBT, uses mcu programming output signal collocation IGBT to drive plate pair
Output signal is isolated and IGBT is switched on and off by realization of boosting.Then to DBC substrate copper facing, copper is formed for test main circuit
Plate is to form the loop of test main circuit.Native system can test the dynamic switching characteristic of the IGBT of pressure voltage maximum 3300V, belongs to
Innovative technology in power test field.
Background technology
Dipulse measuring technology, as a kind of technology testing IGBT dynamic characteristic, can the most clearly reflect
The dynamic switch performance of IGBT, its method of testing is simple, waveform shows clearly, and the computational methods of dynamic parameter are convenient.Dipulse
Measuring technology utilizes the amplitude voltage (+15V/-8V) making IGBT be switched on and off, and the specific burst length realizes IGBT volume
Determine the test of work process breaker in middle dynamic property.The IGBT of test is the half-bridge module of two IGBT series connection, IGBT electronegative potential
The switch of side is sent dipulse signal by single-chip microcomputer and drives plate isolation to control to cut-off after amplifying via IGBT, and at IGBT high potential
Side in parallel an inductance.When single-chip microcomputer is to adding forward arteries and veins between grid and the emitter stage of low potential side IGBT (tested IGBT)
When rushing, the inductance being connected in parallel on IGBT module hot side switch gradually charges, until collector current arrives the test electricity of 100%
Stream.Then IGBT turns off rapidly, and inductance discharges at the fly-wheel diode of hot side IGBT in parallel, and then IGBT is the rapidest
Ground recovers conducting.In this process, the characteristic of IGBT turn-on and turn-off can use the rise time (tr), fall time (tf),
Conduction losses (Eon), turns off loss (Eoff), turn on delay time (td on), turn-off delay time (td off) and gross energy
The switching characteristics such as loss (Etot) characterize.The IGBT module pressure voltage that traditional dipulse test system is tested is less, but
Along with the development of IGBT manufacturing process technology, the pressure voltage of present IGBT is increasing, so we are required to test
The dynamic switch test system of the IGBT of high pressure voltage.In traditional test system oscillograph by main circuit interference very
Greatly, causing test waveform can distort accordingly along with the appearance that sends of pulse, experimental waveform figure is affected, the mistake of test result
Difference is very big, so we need a kind of outstanding isolation technology.Traditional test system can not be the most right according to test case
Dipulse waveform widths is adjusted, different test devices and the change of inductance parameters, Wo Menxu in bad timely reply experiment
Will the most adjustable bi-pulse width.
The present invention is based on dipulse measuring technology, and utilizing programmable single-chip microcomputer to send can adjust at any time when test
Whole pulse dipulse signal, and by electromagnetic shielding, isolating transformer and difference isolation probe, main circuit and test circuit are entered
Row isolation, reduces the interference to test waveform of the main circuit high-voltage pulse.Main circuit uses the connection of copper-plated DBC substrate, further
Reduce main circuit endoparasitism parameter size.
Summary of the invention
Present invention mainly solves the test problem of the dynamic switching characteristic parameter of high pressure high power IGBT module.Use
Big voltage is linear voltage stabilization stabilized current supply and the thin film capacitor parallel connection offer IGBT main circuit of 4 1200V, 270uF of 2000V
Test power supply, main circuit test power supply and the inducer of 0.21mH, the test module of MMG100SR120B, 0.00967 Ω adopts
Sample resistance is simply connected formation main circuit.Drive circuit is then by single-chip microcomputer output signal, and IGBT drives plate, the letter of dual pathways small power supply
Single composition；The 5V port of dual pathways small power supply, 15V port, the output port of negative pole port and single-chip microcomputer is connected to IGBT and drives
The left end of plate, IGBT drives the right-hand member of plate then in succession the test module G end of MMG100SR120B and E end.Oscillograph circuit then by
High Pressure Difference separates from probe, is connected to test G, E two ends of module, C, E two ends, and sampling resistor two ends.For measuring
IGBT dynamic switching characteristic parameter, it is provided that one simple to operate, and the testing time is short, and safe and reliable, and measuring accuracy is preferable
Test platform.
The inventive method is achieved through the following technical solutions.
A kind of method of testing utilizing double-pulsed technology test IGBT dynamic switching characteristic and device；Single-chip microcomputer is utilized to send
Dipulse signal, first pulse makes to test IGBT and reaches rated operational current, and second pulse is for testing the dynamic of IGBT
Step response, utilizes oscillograph and difference isolation probe to test dynamic electric voltage and the current parameters of IGBT when switching.
The dipulse signal sent by single-chip microcomputer was entered IGBT and drives plate and then realize controlling IGBT in the extremely short time
Inside cut-off, avoid signal to interfere experimental circuit and test circuit isolation by isolating transformer；Utilization connects isolation transformation
The oscillograph of device and difference isolate the pop one's head in electric current to main circuit and the voltage of IGBT both end voltage drive circuit outfan
Measure, by oscillogram under oscillograph recording；According to rise and fall time, time delay, switch energy calculates these
The size of IGBT dynamic switching characteristic parameter.
The dynamic switching characteristic testing procedure of the IGBT of the present invention is as follows:
(1) determine the capacitor of circuit connection, between each port of IGBT module, there is no pressure reduction；
(2) being plugged by high-voltage DC power supply triangle plug, it is ensured that power ground ground connection, oscillograph is ground wire grounded；
(3) IGBT not tested is triggered short circuit between the GE of section；
(4) it is adjusted to oscillograph gather signal condition, opens the straight of dual channel source supply IGBT driving plate 5V and 15V
Stream electricity, allows single-chip microcomputer trigger a 5V pulse signal, observes whether dipulse waveform can be adopted in oscilloscope measurement channel C H1
Collection arrives；
(5) open high voltage power supply, bring the voltage up to 600V, from channel C H2, see the situation of change of busbar voltage；
(6) oscillograph being adjusted to acquisition state again, by three channel C H1, CH2, CH3 open；Use single-chip microcomputer
Trigger a dipulse signal；
(7) waveform of recording oscillometer；
(8) high-voltage power voltage is slowly dropped to 0V, close high voltage power supply and close dual channel source；
(9) inspection capacitance group, does not has pressure reduction between each port of IGBT module.
When testing the IGBT of 1200V, test voltage is 600V.
First pulse width that single-chip microcomputer sends is preferably 36us, and second pulse width is preferably 10us.
In order to realize above method, invent IGBT dipulse test device.This device can realize high-power IGBT
The test of dynamic property.This device by linear low density DC source and high voltage bearing capacitor bus-bar as test circuit input end,
The 5V pulse signal of two DC sources of 5V and 12V and single-chip microcomputer output is as the input of drive circuit.Two IGBT
Being connected by half-bridge circuit, inductance is in parallel with high-pressure side IGBT to be used for controlling electric current.Measure end and connect oscillography by difference isolation test pencil
Device is measured.
Advantages of the present invention:
(1) present invention creatively make use of copper-plated DBC substrate to test the electric crossover board of main circuit as dipulse,
Significantly reduce the parasitic parameter in test circuit so that measuring accuracy, safety improve.
(2) present invention uses programmable single chip computer as signal generating source, and the program of design can root the most at any time
Regulating pulse width according to situation, scale division value is 1us.This design can situations different to experiment adjust well so that surveys
The IGBT of examination is operated under rated current, and the IGBT dynamic switching characteristic parameter of test will be more accurate.
(3) drive circuit and main circuit are used BG2C-IGBT general driving plate to isolate by the present invention, to main circuit and
Oscillograph circuit uses isolating transformer and High Pressure Difference separation to isolate from probe dual mode.Test waveform figure is done
Disturbing, vibrate little, test result is more accurate.
Accompanying drawing explanation
Fig. 1 is built experimental provision circuit diagram by present case.
Fig. 2 this method case built experimental provision system diagram.
Fig. 3 is built experimental provision parts connection diagram by this method case.
Fig. 4 is copper facing DBC substrate circuit figure used by this method case.
Fig. 5 is this experiment test voltage and current parameter oscillogram.
Fig. 6 a is voltage U when IGBT opens after amplifyingGEWith electric current ICOscillogram.
Fig. 6 b is voltage U when IGBT turns off after amplifyingGEWith electric current ICOscillogram.
Fig. 7 a is voltage U when IGBT opens after amplifyingCEWith electric current ICOscillogram.
Fig. 7 b is voltage U when IGBT turns off after amplifyingCEWith electric current ICOscillogram.
Fig. 8 a is IGBT switch energy figure when opening.
Switch energy figure when Fig. 8 b is IGBT shutoff.
Detailed description of the invention
The invention provides the device of a kind of IGBT dynamic switching characteristic based on double-pulsed technology test.Package unit bag
Include the precision linear current regulator power supply of the TN-XXZ02 that maximum is 2000V, 4 270uF, pressure voltage 1200V,
It is the thin film capacitor of 947C271K122CCMS that CORNELL DUBILIER company produces model, the DBC base of one piece of copper coating
Plate, the inducer of a 0.21mH, IGBT test module MMG100SR120B, the sampling resistor of 0.00967 Ω, one
Block BG2C-IGBT general driving plate, Tyke oscillograph of a dual channel source (+5V ,+15V), two Tyke high pressure difference
Isolation probe, an ordinary ultrasonic probe line and a big lucite case.
With IGBT module MMG100SR120B as module for testing, utilize double-pulsed technology and test device given above
Realize the parameter measurement to IGBT module dynamic switching characteristic.Wherein involved sampling resistor is by Virginia land state of reason university
Professor Quan provides, and copper-plated DBC substrate is by University Of Tianjin's Materials Academy Electronic Packaging laboratory design processing.Described IGBT is dynamic
Being described as follows of switching characteristic test device:
1, described double-pulsed technology and IGBT dynamic switching characteristic test device
(1) IGBT dynamic switching characteristic test device uses double-pulsed technology, the experiment of IGBT dynamic switching characteristic test
Circuit diagram is as shown in Figure 1.When single-chip microcomputer drives plate to send first pulse signal by IGBT, IGBT is open-minded in test, IGBT
On voltage transient falling, due to the effect of main circuit inductance, main circuit current constantly rises.After first end-of-pulsing,
IGBT turns off, and the upper voltage instantaneous of IGBT increases to supply voltage, and electric current is discharged by fly-wheel diode and is kept approximately constant, this
Time main circuit current reached test needed for rated current.Second pulse starts, and IGBT is open-minded, the upper voltage of IGBT
Again declining, main circuit current rises again, now the change waveform of the voltage instantaneous on IGBT and electric current moment under observed and recorded
Change waveform can obtain dynamic characteristic parameter when IGBT opens.During second end-of-pulsing, IGBT turns off again, in voltage instantaneous
Rising to supply voltage, main circuit current the most quickly drops to 0.
(2) system diagram of IGBT dynamic switching characteristic test, as in figure 2 it is shown, be divided into main circuit and drive circuit.Drive electricity
Road is mainly driven plate to constitute by single-chip microcomputer, Dual Drive channel DC power supply and IGBT, in order to produce the pulse needed for switch IGBT
Voltage.Main circuit diagram is then the half-bridge circuit of the IGBT dipulse test circuit diagram of standard.Surveyed by the IGBT of short circuit one end
Dynamic characteristic parameter during examination other end IGBT switch.
2, the test of described IGBT dynamic switching characteristic specifically comprises the following steps that
(1) check that circuit connection is whether correct, check capacitor with circuit tester DC voltage shelves, each port of IGBT module it
Between either with or without remaining voltage (instrument be placed in lucite of long duration may after induce quiet), if there is pressure reduction,
Do be discharged with wire.
(2) being plugged by high-voltage DC power supply triangle plug, it is ensured that power ground ground connection, oscillograph is ground wire grounded.
(3) IGBT not tested is triggered short circuit between the GE of section.
(4) it is adjusted to oscillograph gather signal condition, opens the straight of dual channel source supply IGBT driving plate 5V and 15V
Stream electricity, allows single-chip microcomputer trigger a 5V pulse signal, observes whether dipulse waveform can be adopted in oscilloscope measurement channel C H1
Collection arrives.
(5) open high voltage power supply, voltage is slowly raised 600V (now it can be seen that see bus from channel C H2
The situation of change of voltage).
(6) oscillograph being adjusted to acquisition state again, by three channel C H1, CH2, CH3 open.Use single-chip microcomputer
Trigger a dipulse signal.
(7) the oscillographic waveform of observation analysis.
(8) high-voltage power voltage is slowly dropped to 0V, and wait for a period of time, close high voltage power supply and close bilateral
Road power supply.
(9) inspection capacitance group, IGBT module has residual voltage or not, is allowed to dry only with wire if necessary.
Main circuit tests preferred 600V (IGBT of test 1200V).First pulse width that single-chip microcomputer sends is preferably
36us, second pulse width is preferably 10us.
Need on pretreatment experimental apparatus is carried out electrostatic inspection, anti-electrostatic wrist ring during operation, need to be put on.Experiment produces
Pulse strength is relatively big, and the impact of EMC be can not ignore, and therefore wraps metal tape on main circuit inducer and single-chip microcomputer and carries out electricity
Magnetic shield, the metal shell line of electromagnetic shielding must contact fully, and ground connection.Between copper-plated DBC base plate line
Gap be 5mm as shown in Figure 4, reserve the biggest gap in order to avoid spark occurs.
Experiment test is 600V at main circuit voltage, i.e., during the half of IGBT module maximum pressure voltage, use oscillograph to survey
Drive circuit output voltage U during the IGBT switch obtainedGE, IGBT both end voltage UCEAnd collector current IC, as shown in Figure 5.
It is switched on and off the waveform of moment by amplifying second pulse, such as Fig. 6, shown in Fig. 7, Fig. 8, IGBT can be clearly observed
During switch, the dynamic change of parameter, in conjunction with the definition of these parameters, can more be precisely calculated under the rising of IGBT module
The fall time, the rise-fall delay time, the parameter such as switch energy.
The IGBT dynamic switching characteristic test device that this employing double-pulsed technology that the present invention announces is built can be succinct
Ground obtains IGBT output voltage UGE, IGBT both end voltage UCEAnd collector current ICTime dependent waveform.Institute will be tested
Waveform and parameter compare with the relevant parameter on IGBT datasheet, error is less, and experimental waveform and theoretical waveform
Basically identical, voltage parameter UGE,UCEWith current parameters ICSize variation situation also close with the situation of Theoretical Calculation gained.Order
IGBT dynamic characteristic parameter td on, the td off that people pays close attention to, tr, tf are the most consistent with on datasheet, reflect total decline
The characteristic that time is bigger than total rise time.Switch energy Eon and Eoff that record of experiment also with datasheet at same model
In enclosing.Each junction point of experimental circuit is more stable when experiment, at high pressure, does not occur Mars under big electric current, and fusing is short
The abnormal conditions such as road.And testing repeatedly, the parameter recorded is all in the range of one.The test device of the present invention has peace
Full property and operability, it is possible to achieve the experiment to IGBT dynamic characteristic is measured and tested rapidly, and technique is simple.
Claims (6)
1. the method for testing utilizing double-pulsed technology test IGBT dynamic switching characteristic；It is characterized in that utilizing single-chip microcomputer to send
Dipulse signal, first pulse makes to test IGBT and reaches rated operational current, and second pulse is for testing the dynamic of IGBT
Step response, utilizes oscillograph and difference isolation probe to test dynamic electric voltage and the current parameters of IGBT when switching.
2. the method for claim 1, is characterized in that the dipulse signal sent by single-chip microcomputer was entered IGBT and drives plate
And then realization controls IGBT and cut-offs within the extremely short time, by isolating transformer, experimental circuit and test circuit isolation are avoided
Signal interferes；Utilize and connect the oscillograph of isolating transformer and difference isolation probe to the electric current of main circuit and IGBT two ends electricity
The voltage pressing drive circuit outfan measures, by oscillogram under oscillograph recording；According to rise and fall time, postpone
Time, switch energy calculates the size of these IGBT dynamic switching characteristic parameters.
3. method as claimed in claim 2, is characterized in that the dynamic switching characteristic testing procedure of IGBT is as follows:
(1) determine the capacitor of circuit connection, between each port of IGBT module, there is no pressure reduction；
(2) being plugged by high-voltage DC power supply triangle plug, it is ensured that power ground ground connection, oscillograph is ground wire grounded；
(3) IGBT not tested is triggered short circuit between the GE of section；
(4) it is adjusted to oscillograph gather signal condition, opens dual channel source supply IGBT and drive the direct current of plate 5V and 15V
Electricity, allows single-chip microcomputer trigger a 5V pulse signal, and whether observe dipulse waveform can be collected in oscilloscope measurement channel C H1
Arrive；
(5) open high voltage power supply, bring the voltage up to 600V, from channel C H2, see the situation of change of busbar voltage；
(6) oscillograph being adjusted to acquisition state again, by three channel C H1, CH2, CH3 open；Use single-chip microcomputer triggers
Dipulse signal；
(7) the oscillographic waveform of record analysis；
(8) high-voltage power voltage is slowly dropped to 0V, close high voltage power supply and close dual channel source；
(9) inspection capacitance group, does not has pressure reduction between each port of IGBT module.
4. method as claimed in claim 3, when it is characterized in that the IGBT testing 1200V, test voltage is 600V.
5. method as claimed in claim 3, is characterized in that first pulse width that single-chip microcomputer sends is 36us, second arteries and veins
Rushing width is 10us.
6. realize the test device utilizing double-pulsed technology test IGBT dynamic switching characteristic of claim 1, it is characterized in that dress
Put by linear low density DC source and high voltage bearing capacitor bus-bar as test circuit input end, two unidirectional currents of 5V and 12V
The 5V pulse signal of source and single-chip microcomputer output is as the input of drive circuit；Two IGBT are connected by half-bridge circuit, electricity
Feel in parallel with high-pressure side IGBT to be used for controlling electric current；Measurement end is connect oscillograph by difference isolation test pencil and measures.
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