CN202815167U - Double pulse IGBT testing device - Google Patents
Double pulse IGBT testing device Download PDFInfo
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- CN202815167U CN202815167U CN201220471832.8U CN201220471832U CN202815167U CN 202815167 U CN202815167 U CN 202815167U CN 201220471832 U CN201220471832 U CN 201220471832U CN 202815167 U CN202815167 U CN 202815167U
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- 238000012360 testing method Methods 0.000 title claims abstract description 34
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- 230000003750 conditioning effect Effects 0.000 claims abstract description 55
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- 238000009434 installation Methods 0.000 claims description 40
- 239000003990 capacitor Substances 0.000 claims description 27
- 238000003860 storage Methods 0.000 claims description 27
- 238000007599 discharging Methods 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 4
- 230000001681 protective effect Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 17
- 230000008569 process Effects 0.000 abstract description 14
- 238000007405 data analysis Methods 0.000 abstract description 5
- 230000008901 benefit Effects 0.000 abstract description 4
- 238000011084 recovery Methods 0.000 description 7
- 239000000047 product Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000004321 preservation Methods 0.000 description 2
- 230000000306 recurrent effect Effects 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000003542 behavioural effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000007600 charging Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
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CN201220471832.8U CN202815167U (en) | 2012-09-14 | 2012-09-14 | Double pulse IGBT testing device |
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Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103399270A (en) * | 2013-07-31 | 2013-11-20 | 东方电气集团东风电机有限公司 | Device and method for double-pulse test of IGBT (insulated polar bipolar transistor) driving module |
CN103592591A (en) * | 2013-11-20 | 2014-02-19 | 西安永电电气有限责任公司 | IGBT module testing circuit and method on condition of no antiparallel diode |
CN104198906A (en) * | 2014-08-27 | 2014-12-10 | 华北电力大学 | Device and method for dynamic characteristic measurement of IGBT |
CN104214798A (en) * | 2014-08-19 | 2014-12-17 | 中山市铧禧电子科技有限公司 | Igniter performance testing system and method |
CN105510792A (en) * | 2015-12-08 | 2016-04-20 | 同济大学 | Current transformer IGBT power module field double-pulse testing system and method |
CN105974234A (en) * | 2016-05-31 | 2016-09-28 | 西安许继电力电子技术有限公司 | T-shaped three-level converter power module double-pulse testing loop and testing method |
CN106291310A (en) * | 2016-10-12 | 2017-01-04 | 天津大学 | A kind of method of testing utilizing double-pulsed technology test IGBT dynamic switching characteristic and device |
CN106468756A (en) * | 2015-08-18 | 2017-03-01 | 长春艾克思科技有限责任公司 | The test system of reverse recovery time of diode |
CN106556791A (en) * | 2016-10-13 | 2017-04-05 | 全球能源互联网研究院 | A kind of high-power IGBT dynamic test circuit and its control method |
CN106841967A (en) * | 2016-12-29 | 2017-06-13 | 江苏中科君芯科技有限公司 | The dynamic test platform and method of testing of high-voltage great-current IGBT |
CN107632205A (en) * | 2017-09-07 | 2018-01-26 | 上海交通大学 | The test platform and method of testing of power semiconductor loss characteristic |
CN108051720A (en) * | 2017-12-07 | 2018-05-18 | 奇瑞汽车股份有限公司 | The test circuit and test method of paralleling MOS FET inverter modules |
WO2018092457A1 (en) * | 2016-11-16 | 2018-05-24 | 富士電機株式会社 | Semiconductor testing circuit, semiconductor testing device, and semiconductor testing method |
CN109425811A (en) * | 2017-08-21 | 2019-03-05 | 上海新微技术研发中心有限公司 | IGBT detection circuit and detection method |
CN109581177A (en) * | 2018-12-14 | 2019-04-05 | 天津瑞能电气有限公司 | IGBT power module dipulse automatically testing platform and its test method |
CN112540279A (en) * | 2020-12-04 | 2021-03-23 | 荣信汇科电气股份有限公司 | Crimping formula IGBT module current conversion testing arrangement |
CN112595947A (en) * | 2019-09-17 | 2021-04-02 | 株洲中车时代电气股份有限公司 | Double-pulse test method and device for converter module |
CN112731190A (en) * | 2020-12-04 | 2021-04-30 | 南京轨道交通系统工程有限公司 | Universal tester and method applied to subway train inverter module |
CN112924839A (en) * | 2021-02-03 | 2021-06-08 | 菏泽天盈新能源有限公司 | Modular dipulse experiment platform |
-
2012
- 2012-09-14 CN CN201220471832.8U patent/CN202815167U/en not_active Expired - Lifetime
Cited By (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103399270B (en) * | 2013-07-31 | 2016-02-24 | 东方电气集团东风电机有限公司 | A kind of IGBT drive module dipulse proving installation and method |
CN103399270A (en) * | 2013-07-31 | 2013-11-20 | 东方电气集团东风电机有限公司 | Device and method for double-pulse test of IGBT (insulated polar bipolar transistor) driving module |
CN103592591A (en) * | 2013-11-20 | 2014-02-19 | 西安永电电气有限责任公司 | IGBT module testing circuit and method on condition of no antiparallel diode |
CN104214798A (en) * | 2014-08-19 | 2014-12-17 | 中山市铧禧电子科技有限公司 | Igniter performance testing system and method |
CN104214798B (en) * | 2014-08-19 | 2016-05-18 | 中山市铧禧电子科技有限公司 | A kind of igniter Performance Test System and method |
CN104198906B (en) * | 2014-08-27 | 2017-06-13 | 华北电力大学 | A kind of device and method for IGBT dynamic characteristic measurings |
CN104198906A (en) * | 2014-08-27 | 2014-12-10 | 华北电力大学 | Device and method for dynamic characteristic measurement of IGBT |
CN106468756A (en) * | 2015-08-18 | 2017-03-01 | 长春艾克思科技有限责任公司 | The test system of reverse recovery time of diode |
CN106468756B (en) * | 2015-08-18 | 2020-10-20 | 深圳艾克思科技有限责任公司 | System for testing reverse recovery time of diode |
CN105510792A (en) * | 2015-12-08 | 2016-04-20 | 同济大学 | Current transformer IGBT power module field double-pulse testing system and method |
CN105974234A (en) * | 2016-05-31 | 2016-09-28 | 西安许继电力电子技术有限公司 | T-shaped three-level converter power module double-pulse testing loop and testing method |
CN106291310A (en) * | 2016-10-12 | 2017-01-04 | 天津大学 | A kind of method of testing utilizing double-pulsed technology test IGBT dynamic switching characteristic and device |
CN106556791B (en) * | 2016-10-13 | 2021-01-01 | 全球能源互联网研究院 | High-power IGBT dynamic test circuit and control method thereof |
CN106556791A (en) * | 2016-10-13 | 2017-04-05 | 全球能源互联网研究院 | A kind of high-power IGBT dynamic test circuit and its control method |
US10996260B2 (en) | 2016-11-16 | 2021-05-04 | Fuji Electric Co., Ltd. | Semiconductor test circuit, semiconductor test apparatus, and semiconductor test method |
WO2018092457A1 (en) * | 2016-11-16 | 2018-05-24 | 富士電機株式会社 | Semiconductor testing circuit, semiconductor testing device, and semiconductor testing method |
JPWO2018092457A1 (en) * | 2016-11-16 | 2019-03-07 | 富士電機株式会社 | Semiconductor test circuit, semiconductor test apparatus, and semiconductor test method |
CN106841967A (en) * | 2016-12-29 | 2017-06-13 | 江苏中科君芯科技有限公司 | The dynamic test platform and method of testing of high-voltage great-current IGBT |
CN109425811A (en) * | 2017-08-21 | 2019-03-05 | 上海新微技术研发中心有限公司 | IGBT detection circuit and detection method |
CN107632205B (en) * | 2017-09-07 | 2019-07-05 | 上海交通大学 | The test platform and test method of power semiconductor loss characteristic |
CN107632205A (en) * | 2017-09-07 | 2018-01-26 | 上海交通大学 | The test platform and method of testing of power semiconductor loss characteristic |
CN108051720A (en) * | 2017-12-07 | 2018-05-18 | 奇瑞汽车股份有限公司 | The test circuit and test method of paralleling MOS FET inverter modules |
CN109581177A (en) * | 2018-12-14 | 2019-04-05 | 天津瑞能电气有限公司 | IGBT power module dipulse automatically testing platform and its test method |
CN112595947A (en) * | 2019-09-17 | 2021-04-02 | 株洲中车时代电气股份有限公司 | Double-pulse test method and device for converter module |
CN112540279A (en) * | 2020-12-04 | 2021-03-23 | 荣信汇科电气股份有限公司 | Crimping formula IGBT module current conversion testing arrangement |
CN112731190A (en) * | 2020-12-04 | 2021-04-30 | 南京轨道交通系统工程有限公司 | Universal tester and method applied to subway train inverter module |
CN112540279B (en) * | 2020-12-04 | 2022-08-16 | 荣信汇科电气股份有限公司 | Crimping formula IGBT module current conversion testing arrangement |
CN112924839A (en) * | 2021-02-03 | 2021-06-08 | 菏泽天盈新能源有限公司 | Modular dipulse experiment platform |
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Denomination of utility model: Double pulse IGBT testing device Effective date of registration: 20131213 Granted publication date: 20130320 Pledgee: Bank of Shanghai Limited by Share Ltd. Pudong branch Pledgor: SHANGHAI YINGHENG ELECTRONIC Co.,Ltd. Registration number: 2013310000085 |
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Date of cancellation: 20190305 Granted publication date: 20130320 Pledgee: Bank of Shanghai Limited by Share Ltd. Pudong branch Pledgor: SHANGHAI YINGHENG ELECTRONIC Co.,Ltd. Registration number: 2013310000085 |
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Denomination of utility model: Double pulse IGBT testing device Effective date of registration: 20190515 Granted publication date: 20130320 Pledgee: Bank of Shanghai Limited by Share Ltd. Pudong branch Pledgor: SHANGHAI YINGHENG ELECTRONIC Co.,Ltd. Registration number: 2019310000024 |
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Date of cancellation: 20231010 Granted publication date: 20130320 Pledgee: Bank of Shanghai Limited by Share Ltd. Pudong branch Pledgor: SHANGHAI YINGHENG ELECTRONIC Co.,Ltd. Registration number: 2019310000024 |