CN111707919A - IGBT device test circuit and test method - Google Patents
IGBT device test circuit and test method Download PDFInfo
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- G—PHYSICS
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Abstract
The invention discloses a test circuit and a test method of an IGBT device, wherein the test circuit comprises: the double-pulse testing module is used for testing the turn-on and turn-off performance of the IGBT; the current tolerance testing module is used for testing the current tolerance of the IGBT under the condition of simulating the bipolar short circuit of the converter valve; the collecting module is used for collecting the voltage of the IGBT collector and emitter and the current of the emitter; the protection module is used for cutting off the connection between the double-pulse test module and the IGBT when the voltage of the collector and emitter of the IGBT and/or the current of the emitter exceeds a corresponding preset threshold value. According to the invention, the on-off performance of the IGBT is tested by using the double-pulse testing module, and the condition that the IGBT is impacted by surge current under the condition that the converter valve is in bipolar short circuit is simulated by using the current source to continuously output square wave current, so that the comprehensiveness and diversity of the IGBT performance test are further improved.
Description
Technical Field
The invention relates to the technical field of power electronics, in particular to a circuit and a method for testing an IGBT device.
Background
With the rapid development of power electronic technology in recent years, the utilization efficiency and scale of renewable energy sources such as wind energy and solar energy are continuously enlarged, and the requirements in the fields of renewable energy source grid connection, distributed power generation grid connection, asynchronous alternating current power grid interconnection and the like are continuously increased, so that the advantages of the multi-terminal voltage source converter high-voltage direct-current transmission are more prominent. For the biggest problem of a multi-terminal high-voltage direct-current transmission system, because the line inductance is small, the line current rises rapidly when a fault occurs, the current in a bridge arm of a converter valve also increases rapidly, when the converter valve has a double-pole short circuit according to the fault waveform in engineering application, the IGBT on the bridge arm needs to bear the surge current which has the maximum peak value not less than 2-3 times of rated current and lasts for several milliseconds, and in the turn-off process, the VCC voltage is not less than 0.66Vces, and the turn-on and turn-off processes (reclosing actions) are not less than 1 time and 2 times. However, in the prior art, the performance of the IGBT is mostly tested by using a double-pulse test circuit, but the double-pulse test circuit is limited by set values of voltage and current, and cannot be adjusted in pulse duration, and the current rising process is triangular wave, which is not in accordance with the fault current that is similar to square wave when the flexible-direct converter valve fails, and the loss generated in the fault current duration process is different, and the junction temperature rise caused by the different loss, so that the double-pulse test circuit cannot be used for equivalent test.
Disclosure of Invention
Therefore, the technical problem to be solved by the invention is to overcome the defect that the IGBT under the bipolar short-circuit fault of the converter valve cannot be subjected to analog equivalent test by using a double-pulse test circuit in the prior art, so that the IGBT device test circuit and the test method are provided.
In order to achieve the purpose, the invention provides the following technical scheme:
in a first aspect, an embodiment of the present invention provides an IGBT device testing circuit, including: the device comprises a double-pulse testing module, a current tolerance testing module, an acquisition module and a protection module, wherein the first end of the double-pulse testing module is connected with an IGBT collector electrode, and the second end of the double-pulse testing module is respectively connected with the first end of the protection module and a grounding end and is used for testing the turn-on and turn-off performance of the IGBT; the current endurance testing module is connected with the IGBT collector at a first end and connected with the second end of the protection module at a second end, and is used for testing the current endurance of the IGBT under the condition of simulating the bipolar short circuit of the converter valve; the first end of the acquisition module is connected with the IGBT collector electrode, and the second end and the third end of the acquisition module are both connected with the IGBT emitter electrode and used for acquiring the voltage of the IGBT collector electrode and the emitter current; and the second end of the protection module is also connected with the third end of the acquisition module and is used for cutting off the connection between the double-pulse test module and the IGBT when the voltage of the collector and emitter of the IGBT and/or the current of the emitter exceeds a corresponding preset threshold value.
In one embodiment, the IGBT device test circuit further includes: and the heating plate is used for heating the temperature of the IGBT to the preset working temperature of the IGBT.
In one embodiment, a double pulse test module includes: the device comprises a voltage source, a charging unit and an on-off testing unit, wherein the voltage source is connected with the input end of the charging unit in parallel and used for providing charging voltage for the charging unit; the first output end of the charging unit is connected with the first end of the on-off testing unit, and the second output end of the charging unit is connected with the first end of the protection module and used for charging the on-off testing unit; and the second end of the on-off test unit is connected with the collector electrode of the IGBT and is used for testing the on-off performance of the IGBT.
In one embodiment, the charging unit includes: a first end of the charging switch is connected with the positive pole of the voltage source; a first end of the discharging switch is connected with a second end of the charging switch; the first end of the discharge resistor is connected with the second end of the discharge switch, and the second end of the discharge resistor is connected with the negative electrode of the voltage source; a first end of the charging resistor is connected with a second end of the discharging resistor, and a second end of the charging resistor is respectively connected with the grounding end and the first end of the protection module; and the first end of the capacitor is connected with the first end of the discharge switch, and the second end of the capacitor is respectively connected with the second end of the charging resistor and the grounding end.
In one embodiment, the on-off test unit includes: the first end of the inductor is connected with the first end of the capacitor; a diode, the first end of which is connected with the first end of the inductor, and the second end of which is connected with the second end of the inductor; and a first end of the first isolating switch is connected with a second end of the inductor, and a second end of the first isolating switch is connected with a collector of the IGBT.
In one embodiment, the current endurance testing module includes: the positive electrode of the current source is connected with the first end of the second isolating switch, and the negative electrode of the current source is connected with the second end of the protection module and used for providing test current for the IGBT; and the second end of the second isolating switch is connected with the collector electrode of the IGBT and is used for controlling the time for the current source to provide the test current for the IGBT.
In a second aspect, an embodiment of the present invention provides a method for testing an IGBT device, where the IGBT device is tested based on the IGBT device testing circuit in the first aspect, and the method for testing an IGBT device includes: closing the charging switch, and simultaneously opening the discharging switch, the first isolating switch and the second isolating switch; judging whether the capacitor voltage reaches a preset test voltage, closing the second isolating switch after the capacitor voltage reaches the preset test voltage, receiving a conduction driving signal sent by an external controller, and carrying out a current tolerance test on the IGBT, wherein the closing driving signal is used for controlling the IGBT to be conducted; judging whether the duration of the current endurance test on the IGBT reaches the preset surge current duration, and when the duration of the current endurance test on the IGBT reaches the preset test time, disconnecting the second isolating switch, closing the first isolating switch and carrying out double-pulse test on the IGBT; and after the double-pulse test is finished, the first isolating switch and the charging switch are disconnected, and the discharging switch is closed.
In an embodiment, the IGBT device testing method further includes: the method comprises the steps of collecting IGBT collector-emitter voltage and emitter current in real time during current tolerance testing and double-pulse testing, comparing the collected IGBT collector-emitter voltage with preset IGBT collector-emitter voltage waveforms, comparing the emitter current with preset emitter current waveforms, and judging whether the IGBT fails.
In an embodiment, the IGBT device testing method further includes: and controlling the heating plate to heat the IGBT to reach a preset working temperature, and then sequentially carrying out current endurance test and double-pulse test on the IGBT.
In one embodiment, the current endurance test is performed on the IGBT, including: setting a square wave current amplitude according to the IGBT rated current amplitude; and controlling the current source to continuously output the square wave current with the square wave current amplitude within a preset time period, and carrying out a current tolerance capability test.
In one embodiment, a double pulse test is performed on an IGBT, comprising: judging whether the IGBT emitter current reaches a first preset current threshold value or not; when the current of an IGBT emitter reaches a first preset current threshold, receiving a turn-off driving signal sent by an external controller, wherein the turn-off driving signal is used for controlling the turn-off of the IGBT; judging whether the IGBT turn-off time reaches the preset turn-off time or not; when the turn-off time of the IGBT reaches the preset turn-off time, receiving a turn-on driving signal sent by an external controller; judging whether the IGBT emitter current reaches a second preset current threshold value or not; and when the IGBT emitter current reaches a second preset current threshold, receiving a turn-off driving signal sent by an external controller.
In an embodiment, the IGBT device testing method further includes: and judging whether the voltage of the IGBT collector and emitter and the current of the emitter exceed corresponding preset thresholds in real time, and disconnecting the protection module, the first isolating switch and the second isolating switch when any one of the collection amount of the voltage of the IGBT collector and emitter and the current of the emitter exceeds the corresponding preset threshold.
The technical scheme of the invention has the following advantages:
1. according to the IGBT device testing circuit and the testing method, the double-pulse testing module is used for testing the turn-on and turn-off performance of the IGBT, and the current source is used for continuously outputting the square wave current to simulate the situation that surge current impacts the IGBT under the condition of bipolar short circuit of the converter valve, so that the comprehensiveness and diversity of IGBT performance testing are further improved.
2. According to the IGBT device testing circuit and the testing method, after the voltage source is used for pre-charging the charging unit, the charging unit is used for discharging to the inductor in the on-off testing unit, and the discharging current is used for carrying out double-pulse testing on the IGBT, so that the IGBT is further protected, and the impact on the IGBT caused by the fact that the voltage source is directly used for carrying out double-pulse testing on the IGBT is avoided; the protection module is arranged, and when the voltage and/or the current of the IGBT exceed the corresponding preset threshold values, the protection module and the two isolating switches can be disconnected in time, so that the safety of the test circuit is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a composition diagram of a specific example of an IGBT device test circuit according to an embodiment of the present invention;
FIG. 2 is a block diagram of a specific example of a double-pulse test module according to an embodiment of the present invention;
fig. 3 shows voltage and current waveforms of an IGBT when a double pulse test is performed on an unreliased IGBT according to an embodiment of the present invention;
fig. 4 is a specific IGBT device test circuit provided in an embodiment of the present invention;
fig. 5 shows voltage and current waveforms of an IGBT when a current endurance test is performed on an unreliased IGBT according to an embodiment of the present invention;
fig. 6 is a flowchart of a specific example of an IGBT device testing method according to an embodiment of the present invention;
FIG. 7 is a flow chart of a specific example of a current endurance test provided by an embodiment of the present invention;
fig. 8 is a flowchart of a specific example of a double pulse test provided by an embodiment of the present invention.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Example 1
The embodiment of the invention provides a test circuit of an IGBT device, which is applied to occasions needing to carry out turn-on, turn-off and current tolerance on the IGBT, and as shown in figure 1, the test circuit comprises: the device comprises a double-pulse testing module 1, a current tolerance testing module 2, an acquisition module 3 and a protection module 4.
According to the double-pulse testing module 1 provided by the embodiment of the invention, the first end is connected with the IGBT collector electrode, and the second end is respectively connected with the first end of the protection module and the grounding end, so that the on-off performance of the IGBT can be tested.
The IGBT is usually recognized mainly by reading a corresponding data manual, parameters described in the data manual are tested based on some given external parameter conditions, and the external parameters in practical application are personalized and often different, so some of the parameters cannot be directly used. Therefore, the performance of the IGBT can be more accurately evaluated through a double-pulse test. The embodiment of the invention utilizes the double-pulse test module to detect whether abnormal oscillation exists in the turn-on and turn-off processes of the IGBT, whether a voltage spike is abnormal when the IGBT is turned off and whether abnormal oscillation exists after the IGBT is turned off, mainly by detecting the collector-emitter voltage and the waveform of the emitter current (or collector current) of the IGBT under the control of two driving pulses aiming at the IGBT, and can also realize the evaluation of an IGBT driving plate and the like.
And the first end of the current endurance testing module 2 is connected with the IGBT collector, and the second end of the current endurance testing module is connected with the second end of the protection module, and is used for testing the current endurance of the IGBT under the condition of simulating the bipolar short circuit of the converter valve.
The IGBT is mainly used in the converter valve, and when the converter valve is in bipolar short circuit, the IGBT on the bridge arm has surge current lasting for a few milliseconds, and the amplitude of the surge current is 2-3 times of the rated current of the IGBT, so that the embodiment of the invention controls the current endurance testing module to output square wave current which is used for simulating the surge current, and the IGBT current endurance testing is realized.
And the first end of the acquisition module 3 is connected with the collector of the IGBT, and the second end and the third end of the acquisition module are both connected with the emitter of the IGBT and are used for acquiring the voltage of the collector and the emitter of the IGBT and the current of the emitter (or the voltage of the collector and the emitter and the current of the emitter). The acquisition module in the embodiment of the invention may include a voltage transformer and a current transformer, the voltage transformer is connected in parallel with the IGBT, and the current transformer is connected in series between the second end of the protection module and the emitter of the IGBT (or between the first end of the dipulse test module and the collector of the IGBT).
And the second end of the protection module 4 is also connected with the third end of the acquisition module and is used for cutting off the connection between the double-pulse test module and the IGBT when the voltage of the collector and emitter of the IGBT and/or the current of the emitter exceeds the corresponding preset threshold value.
The embodiment of the invention can test a large number of IGBTs, and because the maximum peak value which can be borne by the IGBTs is smaller than the surge current peak value and the like, the protection circuit is arranged to cut off the connection between the double-pulse test module and the IGBTs in time so as to prevent the test circuit from being damaged. The protection module in the embodiment of the invention can be a controllable switch device and the like.
According to the IGBT device testing circuit provided by the embodiment of the invention, the on-off performance of the IGBT is tested by using the double-pulse testing module, and the situation that surge current impacts the IGBT under the condition that the converter valve is in bipolar short circuit is simulated by using the current source to continuously output square wave current, so that the comprehensiveness and diversity of the IGBT performance testing are further improved.
In a specific embodiment, the IGBT device test circuit further includes: and the heating plate is used for heating the temperature of the IGBT to the preset working temperature of the IGBT.
According to the embodiment of the invention, the IGBT is arranged on the heating plate, and after the temperature of the IGBT is heated to the preset working temperature of the IGBT, the current endurance test and the double-pulse test can be sequentially carried out.
In one embodiment, as shown in fig. 2, the double pulse test module 1 includes: a voltage source 11, a charging unit 12 and an on-off test unit 13.
And the voltage source 11 is connected with the input end of the charging unit in parallel and is used for providing charging voltage for the charging unit. And the first output end of the charging unit is connected with the first end of the on-off testing unit, and the second output end of the charging unit is connected with the first end of the protection module and used for charging the on-off testing unit. And the second end of the on-off test unit is connected with the collector electrode of the IGBT and is used for testing the on-off performance of the IGBT.
In the embodiment of the invention, under the condition of not considering the turn-on delay and the turn-off delay of the IGBT, when the double-pulse test is carried out on the IGBT which is not failed, firstly, the IGBT is turned on, secondly, the charging unit is charged by using the voltage source, after the voltage of the charging unit reaches the preset test voltage, the on-off test unit is further charged by using the charging unit, because the on-off test unit is connected with the IGBT, the current (or collector current) of the IGBT emitter is increased, the voltage of the collector is 0, when the current (or collector current) of the IGBT emitter is increased to the first preset current threshold value Ic1, the IGBT is turned off, the current (or collector current) of the IGBT emitter is decreased to 0, the voltage of the collector is a preset fixed value (the fixed value is determined according to the parameters such as the internal resistance of each IGBT to be tested) and the like), when the turn-off time reaches the preset turn-off time, the IGBT is turned, the collector voltage is 0, when the IGBT emitter current (or collector current) rises to the second preset current threshold Ic2, the IGBT is turned off, the IGBT emitter current (or collector current) falls to 0, and the collector voltage is a preset fixed value. If the emitter current (or collector current) of the IGBT does not accord with the change trend, the turn-on failure or turn-off failure of the IGBT can be judged.
Specifically, as shown in fig. 3, without considering the turn-on delay and the turn-off delay of the IGBT, and assuming that the IGBT to be tested is normal and has not failed, the IGBT is turned on at time t1, the IGBT emitter current (or collector current) gradually increases, the collector-emitter voltage is 0, when the IGBT emitter current (or collector current) increases to Ic1 at time t1, the IGBT is turned off, the IGBT emitter current (or collector current) decreases to 0, the collector-emitter voltage increases to a fixed value, the IGBT is turned on at time t3, the IGBT emitter current (or collector current) gradually increases, the collector-emitter voltage is 0, when the IGBT emitter current (or collector current) increases to Ic2 at time t4, the IGBT is turned off, the IGBT emitter current (or collector current) decreases to 0, and the collector-emitter voltage increases to a fixed value. If the emitter current (or collector current) and the collector-emitter voltage of the IGBT do not conform to the waveforms shown in fig. 3 under the conditions of actual double-pulse testing and without considering the turn-on delay and turn-off delay of the IGBT, it is possible to determine whether the IGBT is turned on or off by comparing the voltage and current change conditions at each time.
It should be noted that, if the turn-on delay and the turn-off delay of the IGBT are considered, after the IGBT is turned on at the time t1, the current of the emitter current (or the collector current) of the IGBT at the time t2 may be smaller than Ic1, and the collector-emitter voltage of the IGBT at the time t1 does not directly drop to 0, but slowly drops to 0; after the IGBT is turned off at time t2, the current of the emitter current (or collector current) of the IGBT at time t2 may not directly decrease to 0 but slowly decrease to 0, the collector-emitter voltage of the IGBT at time t2 may not directly increase to a fixed value but slowly increase to a fixed value, and after the IGBT is turned on and off at times t3 and t4, the voltage and current of the IGBT that has not failed are analyzed and compared according to specific situations, which is the same as at times t1 and t 2.
In one embodiment, as shown in fig. 4, the charging unit 12 includes: a charge switch S1 having a first terminal connected to the positive terminal of the voltage source; a discharge switch S4 having a first terminal connected to the second terminal of the charge switch; a discharge resistor R2 having a first terminal connected to the second terminal of the discharge switch and a second terminal connected to the negative terminal of the voltage source; a charging resistor R1, a first end of which is connected to the second end of the discharging resistor, and a second end of which is connected to the ground terminal and the first end of the protection module, respectively; and a first end of the capacitor C is connected with the first end of the discharge switch, and a second end of the capacitor C is respectively connected with the second end of the charging resistor and the grounding end.
As shown in fig. 4, the on-off test unit 13 includes: a first end of the inductor L is connected with a first end of the capacitor; a diode D, the first end of which is connected with the first end of the inductor and the second end of which is connected with the second end of the inductor; the first terminal of the first isolation switch S2 is connected to the second terminal of the inductor, and the second terminal thereof is connected to the collector of the IGBT.
When the double-pulse test is carried out on the IGBT and the IGBT is not failed, the specific operation steps and the IGBT current-voltage conversion condition are as follows:
(1) the charging switch S1 is closed, the IGBT is turned on, the discharging switch S4 and the first isolating switch S2 are turned off, a charging loop of a controllable voltage source U1 (voltage source 11) → charging switch S1 → capacitor C → charging resistor R1 is formed in the test circuit, and the controllable voltage source U1 charges the capacitor C.
(2) When the voltage of the capacitor C reaches a preset test voltage, the first isolating switch S2 is closed, and two loops, namely, a controllable voltage source U1 (voltage source 11) → charging switch S1 → inductor L → IGBT and a capacitor C → inductor L → IGBT, are formed in the test circuit, and since the controllable voltage source U1 is much smaller than the voltage of the capacitor C at this time, the capacitor C → inductor L → IGBT is a main discharging loop, and at this time, the emitter current (or collector current) of the IGBT rises and the collector-emitter voltage falls.
(3) When the emitter current (or collector current) of the IGBT rises to the first preset current threshold Ic1, the IGBT is turned off, and at this time, the current in the inductor L freewheels through the diode D, the emitter current (or collector current) of the IGBT falls, and the collector-emitter voltage rises to a fixed value.
(4) When the IGBT is turned off for a period of time, the current in the inductor is quickly transferred to the IGBT, and at this time, the emitter current (or collector current) of the IGBT increases and the collector-emitter voltage decreases.
(5) When the emitter current (or collector current) of the IGBT rises to the second preset current threshold Ic2, the IGBT is turned off, and at this time, the current in the inductor L freewheels through the diode D, the emitter current (or collector current) of the IGBT falls, and the collector-emitter voltage rises to a fixed value.
(6) The charging switch S1 and the first isolating switch S2 are turned off, and the discharging switch S4 is turned on, so that two discharging loops of "inductor L → discharging resistor R2" and "capacitor C → discharging resistor R2" are formed in the test circuit, and the double-pulse test is finished.
In one embodiment, as shown in fig. 4, the current endurance testing module includes: a second isolation switch S3 and a current source (the current source in the embodiment of the present invention is an adjustable current source U2), wherein an anode of the current source is connected to a first end of the second isolation switch, and a cathode thereof is connected to a second end of the protection module, and is configured to provide a test current for the IGBT; and the second end of the second isolating switch is connected with the collector electrode of the IGBT and is used for controlling the time for the current source to provide the test current for the IGBT.
When the converter valve has a two-stage short-circuit fault, the IGBT needs to bear surge current, the amplitude of the surge current is 2-3 times of the rated current value of the IGBT, and the duration of the surge current is several milliseconds, so that the embodiment of the invention utilizes an adjustable current source to output method current (2-3 times of the rated current), and utilizes the second isolating switch S3 to control the time of the current source to continuously output square wave current for simulating the duration of the surge current, and it should be noted that the surge current in the embodiment of the invention can also be other continuous currents which have impact on the IGBT.
When the current capability test is carried out on the IGBT and the IGBT is not failed, the specific operation steps and the IGBT current-voltage conversion conditions are as follows:
(1) the IGBT is turned on, the charging switch S1 and the second isolating switch S3 are closed, the discharging switch S4 and the first isolating switch S2 are opened, the adjustable current source U2 (current source) is controlled to continuously output square wave current, a loop of the adjustable current source U2 → the IGBT is formed in the test circuit at the moment, the emitter current (or collector current) of the IGBT rises, and the collector-emitter voltage drops to 0.
(2) When the duration of the current endurance test on the IGBT reaches the preset test time, the second isolator S3 is turned off, the emitter current (or collector current) of the IGBT decreases, and the collector-emitter voltage increases to a fixed value.
Specific IGBT current-voltage conversion waveforms are shown in fig. 5, where in fig. 5, the IGBT is turned on at time t1, the charging switch S1 and the second isolating switch S3 are turned on, and the second isolating switch S3 is turned off at time t 2.
According to the IGBT device testing circuit provided by the embodiment of the invention, the on-off performance of the IGBT is tested by using the double-pulse testing module, and the situation that surge current impacts the IGBT under the condition that a current source continuously outputs square wave current to simulate the bipolar short circuit of a converter valve, so that the comprehensiveness and diversity of the IGBT performance testing are further improved; after the charging unit is pre-charged by the voltage source, the charging unit is used for discharging to the inductor in the on-off testing unit, and the IGBT is subjected to double-pulse testing by using the discharging current, so that the IGBT is further protected, and the impact on the IGBT caused by the double-pulse testing of the IGBT directly by using the voltage source is avoided; the protection module is arranged, and when the voltage and/or the current of the IGBT exceed the corresponding preset threshold values, the protection module and the two isolating switches can be disconnected in time, so that the safety of the test circuit is improved.
Example 2
The embodiment of the invention provides a method for testing an IGBT device, which is based on the IGBT device testing circuit of the embodiment 1 and comprises the following steps:
step S11: and closing the charging switch, and simultaneously opening the discharging switch, the first isolating switch and the second isolating switch.
Step S12: and judging whether the capacitor voltage reaches a preset test voltage, closing the second isolating switch after the capacitor voltage reaches the preset test voltage, receiving a conduction driving signal sent by an external controller, and carrying out current tolerance test on the IGBT, wherein the closing driving signal is used for controlling the IGBT to be conducted.
As shown in fig. 7, the IGBT was subjected to a current endurance test, which included:
step S21: and setting the square wave current amplitude according to the IGBT rated current amplitude.
Step S22: and controlling the current source to continuously output the square wave current with the square wave current amplitude within a preset time period, and carrying out a current tolerance capability test.
Step S13: and judging whether the duration of the current endurance test on the IGBT reaches the preset surge current duration, and disconnecting the second isolating switch, closing the first isolating switch and carrying out double-pulse test on the IGBT after the duration of the current endurance test on the IGBT reaches the preset test time.
The method comprises the steps of firstly carrying out current endurance testing on the IGBT, closing a charging switch S1 before carrying out the current endurance testing, enabling a voltage source to charge a capacitor C, judging whether the capacitor voltage reaches a preset testing voltage, closing a second isolating switch S3 and conducting the IGBT after the capacitor voltage reaches the preset testing voltage, then controlling a current source to output square wave current, disconnecting the second isolating switch and closing a first isolating switch when the time for controlling the current source to continuously output the square wave current reaches the preset surge current duration, and then carrying out double-pulse testing on the IGBT. Specifically, as shown in fig. 5, the voltage and current waveforms of the non-failed IGBT subjected to the current endurance test are changed, and the IGBT is turned on at time t1 and turned off at time t 2.
The double pulse test of the IGBT as shown in fig. 8 includes:
step S31: and judging whether the IGBT emitter current reaches a first preset current threshold value.
Step S32: and when the current of the IGBT emitter reaches a first preset current threshold, receiving a turn-off driving signal sent by an external controller, wherein the turn-off driving signal is used for controlling the turn-off of the IGBT.
Step S33: and judging whether the IGBT turn-off time reaches the preset turn-off time or not.
Step S34: and when the IGBT turn-off time reaches the preset turn-off time, receiving a turn-on driving signal sent by an external controller.
Step S35: and judging whether the IGBT emitter current reaches a second preset current threshold value.
Step S36: and when the IGBT emitter current reaches a second preset current threshold, receiving a turn-off driving signal sent by an external controller.
Before the current endurance test is carried out on the IGBT, the capacitor C is charged by using the adjustable voltage source U1, so that after the current endurance test is carried out, the second isolating switch S3 is directly closed, the IGBT is subjected to the double-pulse test, the capacitor C discharges to the inductor L, the discharging current flows through the IGBT through the inductor L, when the IGBT is switched on and does not fail, the emitter current (or collector current) of the IGBT rises, the collector voltage drops to 0, otherwise, the IGBT can be judged to be switched on and fail; when the current of an IGBT emitter reaches a first preset current threshold, the IGBT is turned off, the current in the inductor L continues current through the diode D, when the IGBT is turned on and is not failed, the current of the IGBT emitter (or the current of a collector) is reduced, the voltage of the collector and the emitter is increased to a fixed value, otherwise, the IGBT can be judged to be turned off and failed; when the turn-off time of the IGBT reaches the preset turn-off time, the IGBT is turned on, the current in the inductor L is rapidly transferred into the IGBT at the moment, when the IGBT is turned on and is not failed, the emitter current (or collector current) of the IGBT is increased, the collector-emitter voltage is reduced to 0, otherwise, the IGBT can be judged to be turned on and failed; and when the IGBT is switched on and is not failed, the emitter current (or collector current) of the IGBT is reduced, the collector-emitter voltage is increased to a fixed value, otherwise, the IGBT can be judged to be switched off and failed, and the double-pulse test is completed. Specifically, as shown in fig. 3, during the period of the double pulse test of the non-failed IGBT, the IGBT is turned on at the time t1 and the time t3, and turned off at the time t2 and the time t 4.
Step S14: and after the double-pulse test is finished, the first isolating switch and the charging switch are disconnected, and the discharging switch is closed.
In the embodiment of the present invention, the test circuit shown in fig. 3 is used to perform a current tolerance test and a double pulse test on the IGBT, where it should be noted that steps S11 to S14 are to perform the current tolerance test first and then perform the double pulse test, but the order of the two tests may be determined according to actual situations.
In a specific embodiment, the IGBT device testing method further includes:
the method comprises the steps of collecting IGBT collector-emitter voltage and emitter current in real time during current tolerance testing and double-pulse testing, comparing the collected IGBT collector-emitter voltage with preset IGBT collector-emitter voltage waveforms, comparing the emitter current with preset emitter current waveforms, and judging whether the IGBT fails.
The embodiment of the invention collects a large number of voltage and current waveforms of the non-failed IGBTs of various models when the IGBTs are switched on and off, takes the voltage and current waveforms as a comparison example, and compares the voltage and current of the IGBTs during the actual double-pulse test and current endurance test with the voltage and current of the comparison example, thereby judging whether the IGBT fails. It should be noted that, since the IGBTs include various models, the voltage source in fig. 3 is a controllable voltage source, and the current source is an adjustable current source, thereby implementing the test of a large number of IGBTs of various models.
In a specific embodiment, the IGBT device testing method further includes:
and controlling the heating plate to heat the IGBT to reach a preset working temperature, and then sequentially carrying out current endurance test and double-pulse test on the IGBT.
In a specific embodiment, the IGBT device testing method further includes:
and judging whether the voltage of the IGBT collector and emitter and the current of the emitter exceed corresponding preset thresholds in real time, and disconnecting the protection module, the first isolating switch and the second isolating switch when any one of the collection amount of the voltage of the IGBT collector and emitter and the current of the emitter exceeds the corresponding preset threshold.
According to the embodiment of the invention, the voltage and the current values of the IGBT acquired by the acquisition module are sent to an external test control upper computer, and the protection module, the first isolating switch and the second isolating switch (the protection module can be the IGBT) are switched off when any acquisition amount of the voltage of the collector and emitter of the IGBT and the current of the emitter of the IGBT exceeds the corresponding preset threshold value by judging whether the voltage of the collector and emitter of the IGBT and the current of the emitter of the IGBT exceed the corresponding preset threshold value.
According to the IGBT device testing method provided by the embodiment of the invention, the on-off performance of the IGBT is tested by using the double-pulse testing module, and the situation that surge current impacts the IGBT under the condition that the bipolar short circuit of the converter valve is simulated by using the current source to continuously output square wave current, so that the comprehensiveness and diversity of the IGBT performance testing are further improved; after the charging unit is pre-charged by the voltage source, the charging unit is used for discharging to the inductor in the on-off testing unit, and the IGBT is subjected to double-pulse testing by using the discharging current, so that the IGBT is further protected, and the impact on the IGBT caused by the double-pulse testing of the IGBT directly by using the voltage source is avoided; the protection module is arranged, and when the voltage and/or the current of the IGBT exceed the corresponding preset threshold values, the protection module and the two isolating switches can be disconnected in time, so that the safety of the test circuit is improved.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of the invention may be made without departing from the spirit or scope of the invention.
Claims (12)
1. An IGBT device test circuit, comprising: a double-pulse testing module, a current tolerance testing module, an acquisition module and a protection module, wherein,
the first end of the double-pulse testing module is connected with the IGBT collector electrode, and the second end of the double-pulse testing module is respectively connected with the first end of the protection module and the grounding end and is used for testing the turn-on and turn-off performance of the IGBT;
the current endurance testing module is connected with the IGBT collector at a first end and connected with the second end of the protection module at a second end, and is used for testing the current endurance of the IGBT under the condition of simulating the bipolar short circuit of the converter valve;
the first end of the acquisition module is connected with the IGBT collector electrode, and the second end and the third end of the acquisition module are both connected with the IGBT emitter electrode and used for acquiring the voltage of the IGBT collector electrode and the emitter current;
and the second end of the protection module is also connected with the third end of the acquisition module and is used for cutting off the connection between the double-pulse test module and the IGBT when the voltage of the collector and emitter of the IGBT and/or the current of the emitter exceeds a corresponding preset threshold value.
2. The IGBT device test circuit of claim 1, further comprising:
and the heating plate is used for heating the temperature of the IGBT to the preset working temperature of the IGBT.
3. The IGBT device test circuit of claim 1, wherein the double pulse test module comprises: a voltage source, a charging unit and an on-off test unit, wherein,
the voltage source is connected with the input end of the charging unit in parallel and used for providing charging voltage for the charging unit;
a first output end of the charging unit is connected with a first end of the on-off testing unit, and a second output end of the charging unit is connected with a first end of the protection module and used for charging the on-off testing unit;
and the second end of the on-off test unit is connected with the collector electrode of the IGBT and is used for testing the on-off performance of the IGBT.
4. The IGBT device test circuit of claim 3, wherein the charging unit comprises:
a first terminal of the charge switch is connected with the positive electrode of the voltage source;
a first end of the discharging switch is connected with a second end of the charging switch;
a first end of the discharge resistor is connected with a second end of the discharge switch, and a second end of the discharge resistor is connected with a negative electrode of the voltage source;
a first end of the charging resistor is connected with a second end of the discharging resistor, and a second end of the charging resistor is respectively connected with a grounding end and a first end of the protection module;
and the first end of the capacitor is connected with the first end of the discharge switch, and the second end of the capacitor is respectively connected with the second end of the charging resistor and the grounding end.
5. The IGBT device test circuit of claim 4, wherein the on-off test unit comprises:
the first end of the inductor is connected with the first end of the capacitor;
a diode having a first terminal connected to the first terminal of the inductor and a second terminal connected to the second terminal of the inductor;
and a first end of the first isolating switch is connected with a second end of the inductor, and a second end of the first isolating switch is connected with a collector of the IGBT.
6. The IGBT device test circuit of claim 1, wherein the current withstand capability test module comprises: a second isolation switch and a current source, wherein,
the anode of the current source is connected with the first end of the second isolating switch, and the cathode of the current source is connected with the second end of the protection module and used for providing test current for the IGBT;
and the second end of the second isolating switch is connected with the collector electrode of the IGBT and is used for controlling the time for the current source to provide the test current for the IGBT.
7. An IGBT device testing method, characterized in that the IGBT device testing circuit based on any one of claims 1-6 tests the IGBT device, and the IGBT device testing method comprises the following steps:
closing the charging switch, and simultaneously opening the discharging switch, the first isolating switch and the second isolating switch;
judging whether the capacitor voltage reaches a preset test voltage, closing a second isolating switch after the capacitor voltage reaches the preset test voltage, receiving a conduction driving signal sent by an external controller, and testing the current endurance capacity of the IGBT, wherein the conduction driving signal is used for controlling the IGBT to be conducted;
judging whether the duration of the current endurance test on the IGBT reaches the preset surge current duration, and when the duration of the current endurance test on the IGBT reaches the preset test time, disconnecting the second isolating switch, closing the first isolating switch and carrying out double-pulse test on the IGBT;
and after the double-pulse test is finished, the first isolating switch and the charging switch are disconnected, and the discharging switch is closed.
8. The IGBT device testing method of claim 7, further comprising:
the method comprises the steps of collecting IGBT collector-emitter voltage and emitter current in real time during current tolerance testing and double-pulse testing, comparing the collected IGBT collector-emitter voltage with preset IGBT collector-emitter voltage waveforms, comparing the emitter current with preset emitter current waveforms, and judging whether the IGBT fails.
9. The IGBT device testing method of claim 7, further comprising:
and controlling the heating plate to heat the IGBT to reach a preset working temperature, and then sequentially carrying out current endurance test and double-pulse test on the IGBT.
10. The IGBT device test method according to claim 7, wherein the current endurance test of the IGBT comprises:
setting a square wave current amplitude according to the IGBT rated current amplitude;
and controlling the current source to continuously output the square wave current with the square wave current amplitude within a preset time period, and carrying out a current tolerance capability test.
11. The IGBT device test method of claim 7, wherein performing a double pulse test on the IGBT comprises:
judging whether the IGBT emitter current reaches a first preset current threshold value or not;
when the current of an IGBT emitter reaches a first preset current threshold, receiving a turn-off driving signal sent by an external controller, wherein the turn-off driving signal is used for controlling the turn-off of the IGBT;
judging whether the IGBT turn-off time reaches the preset turn-off time or not;
when the turn-off time of the IGBT reaches the preset turn-off time, receiving a turn-on driving signal sent by an external controller;
judging whether the IGBT emitter current reaches a second preset current threshold value or not;
and when the IGBT emitter current reaches a second preset current threshold, receiving a turn-off driving signal sent by an external controller.
12. The IGBT device testing method of claim 7, further comprising:
and judging whether the voltage of the IGBT collector and emitter and the current of the emitter exceed corresponding preset thresholds in real time, and disconnecting the protection module, the first isolating switch and the second isolating switch when any one of the collection amount of the voltage of the IGBT collector and emitter and the current of the emitter exceeds the corresponding preset threshold.
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Application publication date: 20200925 |
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| RJ01 | Rejection of invention patent application after publication |