CN113848445A - Method for monitoring short-circuit and open-circuit faults of IGBT (insulated Gate Bipolar transistor) in SST (Voltage tester) based on Vce - Google Patents
Method for monitoring short-circuit and open-circuit faults of IGBT (insulated Gate Bipolar transistor) in SST (Voltage tester) based on Vce Download PDFInfo
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- CN113848445A CN113848445A CN202111182614.2A CN202111182614A CN113848445A CN 113848445 A CN113848445 A CN 113848445A CN 202111182614 A CN202111182614 A CN 202111182614A CN 113848445 A CN113848445 A CN 113848445A
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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Abstract
The invention discloses a method for monitoring short-circuit and open-circuit faults of IGBTs in SST based on Vce, which comprises the following steps: obtaining collector-emitter voltage V of IGBT in three-phase solid-state transformerCEA voltage waveform; applying the collector-emitter voltage VCEInputting the voltage waveform into a preset fault recognition machine learning model for fault recognition; and the preset fault recognition machine learning model outputs the recognition result of the IGBT. The invention directly obtains the collector-emitter voltage of the IGBT and can intuitively and accurately reflect the fault condition of the IGBT switching device.
Description
Technical Field
The invention belongs to the technical field of monitoring of the running state of a solid-state transformer, and particularly relates to a Vce-based method for monitoring short-circuit and open-circuit faults of an IGBT (insulated gate bipolar translator) in SST (synchronous compensator).
Background
Faults and failures of high-power devices in the operation process become main causes of grid operation faults, and more than 30% of power equipment is crashed due to power electronic converter system crash. The fault state of the high-power device is monitored and positioned on line, the workload and the redundancy of maintenance and replacement can be reduced, and the intelligent level and the reliability of system operation are improved.
A Solid State Transformer (SST) is composed of a high frequency transformer and power electronics with simplified integration, including a high and low voltage side converter and a DC-DC converter. Besides the voltage rising and reducing functions of the traditional transformer, the SST can also provide the functions of voltage stabilization, reactive compensation, direct current interface and data communication. The SST has much smaller volume and weight than the traditional transformer and has excellent performances, so the SST has a very good application prospect in the fields of traction, renewable energy, aerospace and the like.
The IGBT device is used as a switching device, so that the development of the SST is promoted, and the power level and the voltage and current tolerance capability of the SST are improved. However, as the switching frequency increases, the switching loss of the IGBT increases, and the problem of heat generation and life of the IGBT makes it difficult to continuously use the SST module. When the IGBTs are used in parallel, if the IGBTs have faults, collector current cannot be distributed in a balanced manner, and a module through which a large current flows has overlarge power consumption, so that a device is damaged, and parameter distribution and balance control are influenced.
In the prior art, electrical parameters such as thermal resistance are usually used for monitoring the IGBT fault, and the IGBT fault is judged when the thermal resistance is increased by 20% or the junction temperature is increased by 10%. The method aims at single-chip IGBT faults, and is narrow in application range and low in accuracy.
Disclosure of Invention
The invention aims to provide a method for monitoring short-circuit and open-circuit faults of an IGBT (insulated gate bipolar transistor) in an SST (positive temperature coefficient) based on Vce, and aims to solve the problem that in the prior art, the IGBT faults are monitored by using electrical parameters such as thermal resistance and the like, and the accuracy is low.
In order to achieve the purpose, the invention adopts the following technical scheme:
a method for monitoring short-circuit and open-circuit faults of IGBTs in SST based on Vce comprises the following steps:
obtaining collector-emitter voltage V of IGBT in three-phase solid-state transformerCEA voltage waveform;
applying the collector-emitter voltage VCEInputting the voltage waveform into a preset fault recognition machine learning model for fault recognition;
and the preset fault recognition machine learning model outputs the recognition result of the IGBT.
Specifically, the V isCEThe voltage waveform is obtained through an oscilloscope, and the signal input end of the oscilloscope is respectively connected between the collector electrode and the emitter electrode of the IGBT.
Specifically, the fault recognition machine learning model is obtained in the following manner:
the method is characterized in that the open circuit is simulated by disconnecting the IGBT collector-emitter, the short circuit is simulated by short-circuiting the collector-emitter, and the V under the open circuit state and the short circuit state is respectively obtainedCESimulating voltage waveform data;
the V is put intoCEAnd (4) carrying out data normalization processing on the simulation voltage waveform data, wherein one part of the simulation voltage waveform data is used as a training set, and the other part of the simulation voltage waveform data is used as a test set for machine learning to obtain a fault recognition machine learning model.
Specifically, the fault recognition machine learning model utilizes an xgboost algorithm for learning.
Specifically, the V isCEThe simulation voltage waveform data comprises V under the conditions of 1 IGBT short circuit and 2 IGBT short circuitsCEVoltage waveform data, and V in the open state of 1 IGBT, 2 IGBTs, and 3 IGBTsCEVoltage waveform data.
Specifically, the specific way of simulating the open circuit and the short circuit of the IGBT collector-emitter is as follows:
establishing a simulation model of the three-phase solid-state transformer, and performing IGBT (insulated gate bipolar translator) collector-emitter disconnection simulation open circuit and short circuit collector-emitter disconnection simulation short circuit operations on the Simulink model so as to acquire V in short circuit and short circuit statesCESimulating voltage waveform data.
Specifically, the simulation model of the three-phase solid-state transformer is a Simulink model.
Specifically, a Simulink model of a three-phase solid-state transformer is established in MATLAB.
The invention has the following beneficial effects:
v provided by the inventionCEThe method for monitoring the short-circuit and open-circuit fault states of the IGBT in the solid-state transformer directly obtains the collector-emitter voltage of the IGBT, can intuitively and accurately reflect the fault condition of an IGBT switching device, and expands the electric parameter represented by the IGBT state and is suitable for the research range of a single chip; the workload and the redundancy of maintenance and replacement can be reduced, and the intelligent level and the reliability of system operation are improved; can avoid the embedding and the encapsulation of peripheral hardware to destroy, reduce cost and equipment volume size.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this application, illustrate embodiments of the invention and, together with the description, serve to explain the invention and not to limit the invention. In the drawings:
fig. 1 is a circuit topology diagram of distribution and combination of IGBTs during fault in the embodiment of the invention.
Figure 2 an SST simulation topology in an embodiment of the invention.
FIG. 3 is a waveform diagram of voltages under different on/off states according to an embodiment of the present invention.
FIG. 4 example V of the present inventionCEWaveform diagrams under different on-off states.
FIG. 5 example V of the present inventionCEWaveform diagrams under different short circuit conditions.
Detailed Description
The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings. It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict.
The following detailed description is exemplary in nature and is intended to provide further details of the invention. Unless otherwise defined, all technical terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the invention.
The embodiment of the invention provides an IGBT fault monitoring effective electrical parameter in the application of a solid-state transformer topological structure aiming at the fault problem when IGBTs are used in parallel, can effectively reflect the short-circuit and open-circuit faults of the IGBTs with different numbers and position combinations, expands and extends on the basis of monitoring the single-chip fault by utilizing the electrical parameter, and effectively improves the reliability of a system.
The method comprises the following steps: analyzing failure mechanisms of Solid State Transformers (SST) and IGBTs
The failure types in the SST operation process are mainly as follows: overload, IGBT seizure or breakdown, load or bridge arm short circuit, and the like. If the current flowing through the IGBT is too large, the normal operation of the device can be damaged, and serious consequences are caused. Overcurrent faults can be characterized by an increase in on-state voltage drop and fault turn-off operation with a fast recovery diode. Open circuit failures are mainly due to IGBT rupture, complete breakage of the bond wires, solder layer drop, loss of drive signals, or circuit failure. The short circuit fault can be converted into an open circuit fault by a method of connecting the fast fuses in series, and further serious consequences caused by the short circuit fault are reduced.
Step two: assumptions for Fault monitoring parameters
The IGBT fault affects the integral equivalent resistance value of the SST and also affects the current and voltage parameters of the SST. Since the current value is small and the fluctuation is not large, the voltage parameter is selected as the measurement object, and it is assumed that the collector voltage will change with the fault state.
The gate threshold voltage can be used for measuring the temperature distribution difference when the IGBTs are connected in parallel, the change trend of the gate threshold voltage is determined by the concentration of the gate oxide layer and the substrate, and the two parameters are both caused by different movement trends of the microparticles under uneven temperature. It is therefore advisable to use the collector-emitter voltage to characterize the degree of shunt disparity in case of SST internal IGBT faults, i.e. to reflect the type and number of faults of the IGBTs.
Step three: simulation positioning fault characterization electrical parameter
Simulink model of SST was established in MATLAB, circuit topology is shown in FIG. 2, and verification of SSTThe influence of the switching device fault on the collector-emitter voltage waveform is observed, and the waveform change of other voltages is observed, as shown in figure 3, and V is foundCECan be used as a characterization parameter.
Step four: learning of open-circuit and short-circuit simulation data
The IGBT collector-emitter is disconnected to simulate an open circuit, and the collector-emitter is short-circuited to simulate a short circuit, so that when the number of the short circuits of the IGBT is more than 2, a power supply has serious faults, and a system is damaged and cannot be repaired. Only short circuits of 0 to 2 are considered, and the condition that the fault IGBTs are distributed on one bridge or bridge arm is not considered.
As shown in fig. 4 and 5, observing the simulation waveform results in: the change rule under short circuit and open circuit is different, and VCEWith the increase of the number of the fault IGBTs, the oscillation amplitude becomes larger. A negative value can appear in the effective value under the short-circuit fault; in the open state, the effective value of the waveform is decreased, that is, the waveform is shifted down, and the rising and falling phases of the waveform are increased, the waveform slope is larger, the duration in the vicinity of the peak is shorter, and the time for staying in the vicinity of the lowest value is longer. The greater the number of IGBTs with open circuit failure, VCEThe larger the amplitude of oscillation in the initial state. As the number of IGBT shorts increases, the waveform tends to be negative.
And (3) performing machine learning by using simulation data, dividing fault types into 1 IGBT short circuit and 2 IGBT short circuits and 1 IGBT open circuit, 2 IGBT open circuit and 3 IGBT open circuit, and normalizing sampling data by using data preprocessing as a training set to perform machine learning as shown in figure 1. After data is imported, the xgboost algorithm with high precision and high speed is used for learning, finally, the data obtained by simulating and simulating the fault state measurement is continuously used as a test set, the test set is imported for classification, and the prediction accuracy and the judgment result are obtained and are shown in the table above.
Step five: data entry determination
And monitoring data needing to judge the fault type, importing the data into a machine learning program, and performing classification judgment. Wherein VCEThe machine learning accuracy of the whole data is 98.4%, and the fault type can be effectively judged.
It will be appreciated by those skilled in the art that the invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The embodiments disclosed above are therefore to be considered in all respects as illustrative and not restrictive. All changes which come within the scope of or equivalence to the invention are intended to be embraced therein.
Claims (8)
1. A method for monitoring short-circuit and open-circuit faults of IGBTs in SST based on Vce is characterized by comprising the following steps:
obtaining collector-emitter voltage V of IGBT in three-phase solid-state transformerCEA voltage waveform;
applying the collector-emitter voltage VCEInputting the voltage waveform into a preset fault recognition machine learning model for fault recognition;
and the preset fault recognition machine learning model outputs the recognition result of the IGBT.
2. The method for IGBT short-circuit and open-circuit fault monitoring in SST based on Vce according to claim 1, characterized in that VCEThe voltage waveform is obtained through an oscilloscope, and the signal input end of the oscilloscope is respectively connected between the collector electrode and the emitter electrode of the IGBT.
3. The method for monitoring short-circuit and open-circuit faults of IGBTs in SST based on Vce according to claim 1, characterized in that the fault recognition machine learning model is obtained as follows:
the method is characterized in that the open circuit is simulated by disconnecting the IGBT collector-emitter, the short circuit is simulated by short-circuiting the collector-emitter, and the V under the open circuit state and the short circuit state is respectively obtainedCESimulating voltage waveform data;
the V is put intoCEAnd (4) carrying out data normalization processing on the simulation voltage waveform data, wherein one part of the simulation voltage waveform data is used as a training set, and the other part of the simulation voltage waveform data is used as a test set for machine learning to obtain a fault recognition machine learning model.
4. The method for monitoring short-circuit and open-circuit faults of IGBTs in SST based on Vce according to claim 3, characterized in that the fault recognition machine learning model utilizes the xgboost algorithm for learning.
5. The method for IGBT short-circuit and open-circuit fault monitoring in SST based on Vce according to claim 3, characterized in that VCEThe simulation voltage waveform data comprises V under the conditions of 1 IGBT short circuit and 2 IGBT short circuitsCEVoltage waveform data, and V in the open state of 1 IGBT, 2 IGBTs, and 3 IGBTsCEVoltage waveform data.
6. The method for monitoring short-circuit and open-circuit faults of the IGBTs in the SST based on Vce according to claim 3, wherein the specific mode for simulating the open circuit and the short circuit of the IGBT collector-emitter is as follows:
establishing a simulation model of the three-phase solid-state transformer, and performing IGBT (insulated gate bipolar translator) collector-emitter disconnection simulation open circuit and short circuit collector-emitter disconnection simulation short circuit operations on the Simulink model so as to acquire V in short circuit and short circuit statesCESimulating voltage waveform data.
7. The method for monitoring the short-circuit and open-circuit faults of the IGBTs in the SST based on Vce according to claim 6, wherein the simulation model of the three-phase solid-state transformer is a Simulink model.
8. The method for IGBT short-circuit open-circuit fault monitoring in Vce-based SST according to claim 7, wherein a Simulink model of a three-phase solid-state transformer is built in MATLAB.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115616369A (en) * | 2022-10-24 | 2023-01-17 | 合肥工业大学 | Health monitoring method for bonding wire of power module of wireless charging equipment of electric automobile |
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| CN111160241A (en) * | 2019-12-27 | 2020-05-15 | 华中科技大学 | Power distribution network fault classification method, system and medium based on deep learning |
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| CN109342911A (en) * | 2018-09-18 | 2019-02-15 | 华中科技大学 | A kind of IGBT short-circuit detecting device and method based on integrator |
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