CN110470967A - A kind of pulse power AC aging test platform and test method - Google Patents
A kind of pulse power AC aging test platform and test method Download PDFInfo
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Abstract
The invention discloses a kind of pulse power AC aging test platform and test methods, it is tested for the aging conditions to IGBT module under the conditions of pulse power, and the service life of IGBT module is assessed, test platform includes with lower unit: main circuit unit, for simulating complete digestion period；Measuring circuit unit, for realizing the measurement of saturation voltage drop and crust thermal resistance to IGBT module；Circuit unit is protected, for being protected accordingly to test platform；Information process unit, for the various information during test to be controlled and handled；Host computer, for receiving various information that information process unit sends over and being shown and controlled.The present invention realizes the degradation of IGBT module under the conditions of pulse power, completes IGBT module saturation voltage drop and crust thermal resistance measurement, can provide strong support for the assessment IGBT module service life.
Description
Technical field
The invention belongs to technical field of electric equipment, are related to IGBT module, and in particular to a kind of pulse power exchange is old
Change test platform and test method.
Background technique
IGBT (Insulated Gate Bipolar Transistor), full name insulated gate bipolar transistor is MOSFET
The product combined with GTR (power crystalline substance pipe).Its three poles are collector (C), emitter (E) and grid (G) respectively.
The characteristics of IGBT: breakdown voltage is up to 1200V, and collector maximum saturation electric current is more than 1500A.By IGBT conduct
The capacity of the frequency converter of inversion device reaches 250kVA or more, and working frequency is up to 20kHz.
As one of important high-power mainstream device of power electronics, IGBT has been widely used for household electrical appliance, traffic fortune
The fields such as defeated, power engineering, renewable energy and smart grid.In terms of industrial application, such as traffic control, power conversion, work
Industry motor, uninterruptible power supply, wind-powered electricity generation and solar energy equipment, and the frequency converter for automatic control.In terms of consumer electronics,
IGBT is used for household electrical appliance, camera and mobile phone.
Exchange aging can more reflect the true ager process of device, but exchange under aging, and device works in HF switch
State, aging characteristics On-line testing are worldwide still a problem.In the prior art, to the exchange aging of IGBT
It can't realize effective measurement and assessment, also lack the platform and method for carrying out AC aging test to it.
Summary of the invention
For the above-mentioned problems in the prior art, the present invention provides a kind of pulse power AC aging test platforms
And test method, the degradation of IGBT module under the conditions of pulse power is realized, IGBT module saturation voltage drop and knot are completed
Shell thermal resistance measurement can provide strong support for the assessment IGBT module service life.
For this purpose, the invention adopts the following technical scheme:
A kind of pulse power AC aging test platform, for the aging conditions to IGBT module under the conditions of pulse power into
Row test, and the service life of IGBT module is assessed, including with lower unit:
Main circuit unit, including full-bridge inverter main circuit and IGBT module driving circuit；Main circuit works in pulse function
Under the mode of rate, for simulating complete digestion period；
Measuring circuit unit, including IGBT module saturation voltage drop measuring circuit and IGBT module crust thermal resistance measurement circuit,
For realizing the measurement of saturation voltage drop and crust thermal resistance to IGBT module；
Circuit unit is protected, for being protected accordingly to test platform, test platform is based on DC bus short circuit electricity
Stream is protected；
Information process unit, for the various information during test to be controlled and handled；
Host computer, for receiving various information that information process unit sends over and being shown and controlled.
Preferably, the main circuit unit uses H bridge inverter structure, and one two is added at bus capacitor and at bus
The IGBT module of IGBT encapsulation, upper tube are bus capacitor switch, and down tube is bus-tie circuit breaker；When upper tube is opened, allow bus electricity
Discharge capacitor, conversely, then bus capacitor does not discharge；When down tube is opened, DC power supply or bus capacitor is allowed to provide electricity to main circuit
Can, conversely, then powering off the connection of source and main circuit by diode resistance.
Preferably, the IGBT module saturation voltage drop measuring circuit using can isolated DC bus high pressure measuring circuit,
When corresponding IGBT shutdown, the high pressure of collector will be blocked by diode, protect rear class amplifier and A/D chip；The IGBT module knot
Shell thermal resistance measurement is according to thermal resistance definitionWhen reaching hot stable state to device acquisition junction temperature and shell temperature into
Row calculates, wherein TjFor junction temperature, TcFor shell temperature, PHFor heating power, Rth_JCFor IGBT module crust thermal resistance.
Preferably, the protection circuit unit includes system-level protection and the protection of IGBT module grade；The system-level protection
For bus capacitor damage, IGBT over-voltage breakdown or insulation breakdown caused by preventing system overvoltage from running；Reasonable disposition DC side
The overvoltage protection threshold value of DC power supply carries out overvoltage protection to whole system, and when over-voltage phenomenon occurs for system, power supply is defeated
Voltage is locked into protection threshold value out, to protect system integrally without damage；The IGBT module grade protection mainly considered
Stream protection, main there are two implementations: first is that monitoring bus current, carries out soft/hard pass to IGBT when finding short circuit current
It is disconnected；It is another, it is monitoring IGBT saturation voltage drop, when shoot through occurs for full-bridge circuit, IGBT electric current is increased rapidly, the both ends CE
Pressure drop also increase, IGBT exits saturation region and enters linear zone.
Preferably, IGBT driving board protection parameters are configured by changing related IGBT driving board resistance sizes.
Preferably, by the IGBT module reversal connection access bus of a half-bridge encapsulation；When upper down tube is turned off, upper tube
In anti-paralleled diode guarantee capacitor do not discharge；Anti-paralleled diode in down tube blocks the input of power supply；For realizing old
Change, measurement integration, automation.
Preferably, the information process unit carries out field digital control using DSP/SCI, SPI, and information is passed through
RS232/485 is sent to host computer.
Preferably, the host computer mainly includes following components:
Administrator's login system: it is logged in for administrator, only just can enter system when username and password is correct；
Power parameter setting: for the parameter of DC power supply to be arranged, voltage, electric current and measurement rank including the ageing step
Voltage, the electric current of section；
Platform courses and monitoring: the start and stop of PC control platform；Working platform stage real-time display, including ageing step
Or measuring phases；Working platform state real-time display, including platform works normally or abnormal work alarm；IGBT module aging into
Junction temperature shell temperature waveform, aging characteristics in journey real-time display, including module aging number, ageing process；
The inquiry of historical data: realizing the storage of IGBT module aging characteristics, and host computer passes through selection querying condition inquiry
The change curve of corresponding aging characteristics, querying condition includes aging number and aging characteristics；
Platform initialization: for emptying all aging numbers of a upper ageing module before starting one new module of aging
According to.
A kind of AC aging test method of above-mentioned pulse power AC aging test platform, it is flat with pulse power inverter
Platform is research object, is based on H bridge inversion topological structure, is designed using exchange aging method to degradation platform；Including
Following part:
Main circuit structure: it selects full-bridge topologies to reduce particular power source buying expenses, under full-bridge topologies, is
Reach same output electric current, busbar voltage and load voltage are original half, and capacity is also original half；In full-bridge
Under topological structure, AC aging test platform is simulation actual condition, is slightly distinguished on control strategy with ordinary inverter, main
It is embodied on output voltage amplitude and output frequency variation；
Aging characteristics are chosen: stress suffered by IGBT be mainly the fluctuation of big junction temperature caused by the temperature rise effect of low-frequency current with
High average junction temperature, big junction temperature fluctuation and high average junction temperature mainly affect the bonding line and solder layer of IGBT；Saturation voltage drop and knot
Shell thermal resistance reflects the health status of both materials, the two parameters are set as characteristic quantity to be measured；
Design communication degradation platform: design one is used for the small-sized IGBT degradation platform of laboratory environment, if
Timing makes the operating condition of aging platform close to truth as far as possible；Consider under two different operating conditions, the service life of IGBT whether there is
Biggish difference.
Preferably, two kinds of different operating conditions include nine level single-phase inversion circuits and two level single-phase inversion circuits, nine level
There are four IGBT to bear busbar voltage simultaneously for circuit, and only one IGBT of two level circuits bears busbar voltage；It puts up
After entire nine level and two-level inversion circuit, electroanalysis is carried out to IGBT, i.e., loss analysis is carried out in operation to IGBT；
After establishing IGBT ther mal network model, IGBT junction temperature waveform is obtained after recycling under nine level and two level respectively 18 times,
Foundation is provided for subsequent life appraisal.
Compared with prior art, the beneficial effects of the present invention are:
(1) a kind of IGBT AC aging test platform for laboratory is devised, the test platform is easy to use, can grasp
The property made is strong, increasingly automated.
(2) inverter of single-phase H bridge topology is devised, configured with corresponding protection；And the topological structure of H bridge is optimized,
Realize measurement, aging automation.
(3) a kind of control strategy and radiating condition are provided, can preferably simulation inverter under certain special operation condition
Electric heating stress suffered by IGBT.
(4) aging character of IGBT saturation voltage drop and IGBT module crust thermal resistance as assessment IGBT state is reasonably selected
Amount, and realize the accurate measurement to above-mentioned two characteristic quantity.
(5) master system matched with test platform is devised, monitoring, the aging data of platform operating condition are realized
Read-write and display.
Detailed description of the invention
Fig. 1 is a kind of functional block diagram of pulse power AC aging test platform provided by the present invention.
Fig. 2 is a kind of overall work period schematic diagram of pulse power AC aging test platform provided by the present invention.
Fig. 3 is three level H-bridge topological structures of diode clamp.
Fig. 4 is a kind of main circuit topological structure figure of pulse power AC aging test platform provided by the present invention.
Fig. 5 is the circuit diagram of nine level single-phase inversion circuits.
Fig. 6 is the circuit diagram of two level single-phase inversion circuits.
Fig. 7 is the circuit diagram of IGBT module saturation voltage drop measuring circuit.
Fig. 8 is the timing and the junction temperature in corresponding stage of heated current and measurement electric current.
IGBT module and heat sink Equivalent heat path figure when Fig. 9 is hot stable state.
Figure 10 is IGBT overcurrent protection timing diagram.
Figure 11 is host computer major function design flow diagram.
Specific embodiment
With reference to the accompanying drawing and specific embodiment come the present invention will be described in detail, specific embodiment therein and explanation only
For explaining the present invention, but it is not as a limitation of the invention.
Embodiment
A kind of pulse power AC aging test platform, as shown in Figure 1, mainly including following part:
Main circuit: full-bridge inverter main circuit and IGBT module driving circuit.In view of load is close to pure inductive load,
Therefore consider DC voltage input survey be incorporated to buffering capacitor array it is idle to provide.
Measuring circuit: including IGBT module saturation voltage drop measuring circuit and IGBT module crust thermal resistance measurement circuit；
Protect circuit: soft breaking circuit, system overvoltage relaying configuration after IGBT over-current detection circuit, failure；
Signal conditioning circuit: IGBT module shell temperature extracts circuit, saturation voltage drop and thermal resistance information-processing circuit；
Using DSP as the control of the field digital of core, coordination and information processing embedded system；
Host computer: the host computer procedure developed with MATLAB or LabView.
Wherein, the measurement scheme of IGBT module saturation voltage drop and crust thermal resistance is as follows:
Saturation voltage drop measurement scheme: using can isolated DC bus high pressure measuring circuit, when corresponding IGBT shutdown, current collection
The high pressure of pole will be blocked by diode, protect the chips such as rear class amplifier and AD.
Crust steady state heat resistance measurement scheme: in view of the actual motion mode of test platform, the thermal resistance measurement scheme that crusts will
According to thermal resistance definitionJunction temperature is acquired when reaching hot stable state to device and shell temperature is calculated.
Test platform overall work state is as shown in Fig. 2, main circuit would operate in (intermittent duty under the mode of pulse power
Mode): main circuit will be in 0-t1Shi Jinhang inversion, in t1-t2When intermittent cooling, 0-t1-t2For one cycle, n × 18 circulation
For a complete digestion period.
Using pulse power inverter platform as research object, it is based on H bridge inversion topological structure, uses exchange aging method pair
Degradation platform is designed.The AC aging test of IGBT belongs to power cycle aging, enables to IGBT module with one
The fixed period realizes the circular wave of device layers temperature.In general exchange aging, IGBT module is in the left side 5kHz to 20kHz
Right switch state, the switching loss and conduction loss of device rise its junction temperature, shell temperature.It exchanges under aging, flows through device
Heated current is AC load electric current, and power supply becomes constant pressure source (for voltage source inverter) from constant current heating source, so handing over
Stream aging, which has also contemplated bus high pressure, influences the aging of device.
It is bad to the unnecessary interference of module ageing results generation in view of flowing, it will be without using more IGBT module redundancies simultaneously
The strategy of connection, this simplification have no influence to the ageing research of device level.In addition, the basic module of cascade connection multi-level topology is
The tri-level circuit of diode clamp, every group of module electric heating stress are also similar.In view of more really reflecting operating condition, two can be used
The tri-level circuit of pole pipe clamper builds aging platform.But there is a problem of so inevitable:
As shown in figure 3, being i to reach peak valueac_peakThe output electric current of=80A, calculate DC bus-bar voltage should be
Udclink=844V, variable voltage variable frequency output voltage peak maximum are Uo_peakmax=628V.Investigation discovery, DC power supply single machine electricity
Pressure output valve is generally 450V or hereinafter, and purchase cost that power supply connects in series and parallel is excessively high.In the case where platform not drop volume,
Three-level topology can not be selected to exchange aging.
To control appropriation budget, full-bridge topologies is selected to reduce particular power source buying expenses.As shown in figure 4, main electricity
Road uses H bridge topological structure, and to reach same output electric current, busbar voltage and load voltage are original half, respectively
For Udclink=422V, Uacpeakmax=314V, capacity are also original half, about 12.5kVA.In the structure of full-bridge topology
Under, exchange aging platform is simulation actual condition, is slightly distinguished on control strategy with ordinary inverter, the main distinction is embodied in
On output voltage amplitude and output frequency variation.
In addition, exchange aging can more reflect the true ager process of device.But under exchange aging, device works in high frequency
Switch state, aging characteristics On-line testing are worldwide still a problem.For special intermittent work
Inverter operating condition can carry out offline feature measurement to avoid conventional AC aging characteristics and be difficult to the problem of extracting, finally
Determine the selected scheme using exchange aging.
The ageing failure of IGBT device can be interpreted as in During Process of Long-term Operation from the angle of material science, since performance declines
Caused inevitable outcome is moved back, is the angle from the physics of failure, realizes IGBT device reliability degradation assessment or analysis IGBT device
The basis of operation risk.Since the main reason for IGBT performance degradation is the variation of physical structure, it is difficult to it detects by an unaided eye, therefore one
As to the status monitoring of IGBT be all by measure IGBT electrical characteristics, thermal characteristics carry out indirectly.These characteristics are IGBT a bit
Static parameter, the main saturation voltage drop including IGBT, crust thermal resistance, threshold voltage etc., also some are the dynamic parameters of IGBT,
For example it opens, the turn-off time, Miller platform voltage etc..These characteristics can occur respectively with the degeneration of IGBT each section physical structure
More apparent variation, these variations are able to reflect the health status of IGBT.
Stress suffered by IGBT for this platform and actual platform is mainly to tie greatly caused by the temperature rise effect of low-frequency current
Temperature fluctuation and high average junction temperature, studies have shown that big junction temperature fluctuation and high average junction temperature mainly affect bonding line and the weldering of IGBT
The bed of material.And saturation voltage drop and crust thermal resistance can preferably reflect the health status of both materials, therefore this platform is the two
Parameter is set as characteristic quantity to be measured.
The basic circuit topological structure of test platform is as shown in figure 4, be a H bridge inverter structure.On this basis, platform
The IGBT module of two IGBT encapsulation is added in main circuit at bus capacitor and at bus.Its upper tube referred to as " open by bus capacitor
Close ", down tube is known as " bus-tie circuit breaker ".When upper tube is opened, bus capacitor is allowed to discharge, conversely, then bus capacitor does not discharge, but by
In the presence of anti-paralleled diode, still allow DC power supply to capacitor charging at this time；When down tube is opened, allow DC power supply or mother
Line capacitance provides electric energy to main circuit, conversely, then powering off the connection of source and main circuit by diode resistance.
Design one is used for the small-sized IGBT degradation platform of laboratory environment, when design, makes aging platform as far as possible
Operating condition close to truth, but due to the reduction of capacity, the difference of load characteristic, topology and modulator approach have differences etc. because
Element, AC aging test working platform characteristic can not be completely the same with actual conditions.In order to make the conclusion of degradation platform more
It is significant, it is considered as under two different operating conditions, the service life of IGBT whether there is biggish difference.
Fatigue refers to that certain point or certain points bear Disturbance stress, and forms crackle after enough circulation perturbation actions
Or the part occurred in the material being broken completely, permanent structure variation development process.The fracture of material structure, it is meant that
The termination of its fatigue process, and the number of time experienced or circulation disturbance during this, referred to as " service life " of the structure.
Fatigue damage (fatigue rupture) refers to that damage occurs for structure or component and long-term accumulated causes structural material to split
Line, and make crack propagation, until fracture completely.The load for the repetition variation for causing fatigue rupture to occur is called fatigue load.Make
Usually constantly changed at any time with the size and Orientation of the load in structure, is generally being retouched using stress or Cyclic Strain
It states, the stress generated by load or the primary load and unloading that strain on component are denoted as primary stress circulation.
For IGBT module, " load " can be understood as device junction temperature, and " stress " is then material shape caused by load
Varying stress.
For nine level of comparison, the stress of two level circuits, nine level, two Level Full Bridge inverter circuits are built in PLECS,
Topological structure difference is as shown in Figure 5 and Figure 6.Nine level circuit parameters are Udcmax=1688V, Uacmax=1256V, Iacmax=
80A, fmax=85Hz, Smax=12.5kVA；Since there are four IGBT to bear busbar voltage simultaneously for nine level, and two level are only
There is an IGBT to bear busbar voltage, so the voltage stress that nine level can be born is four times of two level.Therefore, two level
Circuit parameter be Udcmax=1688/4=422V, Uacmax=1256/4=314V, Iacmax=80A, fmax=85Hz, Smax=
12.5kVA。
The electrothermic model of nine, two-level inversion circuit are built in PLECS, operating condition is operation 2.8s, stops 0.7s, circulation
36 times, IGBT initial temperature is 40 DEG C.
After putting up entire nine level and two-level inversion circuit, electroanalysis is carried out to IGBT, i.e., IGBT is being transported
Loss analysis is carried out in row.Under nine level, by analysis, the down tube IGBT (i.e. IGBT6) of upper right bridge arm is lost maximum.Two
Under level, by analysis, the upper tube IGBT (i.e. IGBT1) of left bridge arm is lost maximum.The loss waveform class of three level and two level
Seemingly, all it is that low-frequency range is larger to the integrated value (i.e. energy) of time, is affected to junction temperature, nine level are in 148W, two level
In 154W, and for highest loss value difference 15W or so.Nine level and the IGBT differential loss under two level topologys are little.
After establishing IGBT ther mal network model, respectively under nine level and two level, IGBT is obtained after circulation 18 times
Junction temperature waveform.Nine level IGBT6 maximum junction temperatures are 101 DEG C, and two level IGBT1 maximum junction temperatures are 104 DEG C, are subsequent life appraisal
Foundation is provided.It ensure that IGBT junction temperature after circulation 18 is no more than 120 DEG C.
The full-bridge topology of nine level H-bridge of cascade connection type He AC aging test platform of the present invention is emulated in PLECS
To obtain the variations injunction temperature situation of IGBT pipe in it.Junction temperature circulation is counted respectively with rain flow method in MATLAB
Number.
Linear cumulative damage law thinks that the fatigue damage under various stress levels independently carries out, and damage can be linear
It adds up, when cumulative fatigue damage reaches certain numerical value, fatigue rupture just occurs for structure.For IGBT module, Miner
Theory thinks, individually calculates fatigue damage amount to each junction temperature fluctuation of random load spectrum and average junction temperature Cyclic Stress
And by its linear superposition, when amount of damage accumulation is greater than 1, it is believed that fatigue damage occurs for device.
LESIT analytic modell analytical model based on the IGBT service life calculates fatigue damage amount, defines the fatigue damage of certain any load
Amount is Di
Wherein, NiIt is counted for the cycle-index of certain load, NfFor the failure cycle-index under this kind of load, present invention spy
Refer to the failure cycle-index calculated by LESIT service life analytic modell analytical model (formula 2).
Damage is counted with rain flow method in MATLAB, all impair linearities are added up, is asked after inverse i.e.
IGMT service life, the IGBT life span comparison results of AC aging test platform and nine electrical level inverters provided by the present invention can be obtained
As shown in table 1.
1 AC aging test platform of table and nine electrical level inverter IGBT life predictions
| The AC aging test platform IGBT service life | Nine electrical level inverter IGBT service life |
| 17122 circulations | 18421 circulations |
Found from table 1, the two service life gap is little, illustrate even if two kinds of inverters there are many parameter it is inconsistent, but
AC aging test platform provided by the present invention still is able to preferably simulate actual condition, can be to the longevity of nine electrical level inverters
Life provides certain reference.
As shown in fig. 7, IGBT saturation voltage drop measuring circuit using can isolated DC bus high pressure measuring circuit, it is corresponding
When IGBT is turned off, the high pressure of collector will be reversed diode blocking, protect the chips such as rear class amplifier and AD.
The IGBT device saturation voltage drop measuring device working principle of one bridge arm is as follows:
(a) when IGBT is turned off, high voltage fast recovery diode reversely ends, and isolated DC bus bar side voltage protection Vce is adopted
Collector；
(b) when IGBT is connected, amplifier output voltage are as follows:Using 14 high-precision bipolarity A/D chips
AD7367 sampling then passes through DSP reading, completes the measurement to IGBT saturation voltage drop.
It is also related with junction temperature in view of IGBT saturation voltage drop is not only related with ageing state, therefore it is necessary to be saturated in measurement
When pressure drop, keep each junction temperature identical.According to measurement timing, when device is heated, pressure drop between test constantly CE,
Intermittent interruption heated current simultaneously injects low current to measure junction temperature.Therefore, the pressure drop between the CE of test constantly includes two kinds,
One is aging characteristics saturation voltage drop Vce(sat), one is the low current pressure drops for extracting junction temperature information.When junction temperature reaches
When setting value (this test platform is 60 DEG C), the aging characteristics that the saturation voltage drop of last time measurement is measured as this are transferred.So
After continue heating to measure crust thermal resistance.
The measurement accuracy of IGBT saturation voltage drop depends primarily on the installation scenarios of ADC precision and measuring device pcb board, passes through
Debugging, it is contemplated that IGBT saturation voltage drop measurement error be less than ± 10% (with oscillograph reading be reference).
IGBT module crusts, and and then saturation voltage drop measurement carries out thermal resistance measurement.The measurement scheme of IGBT module crust thermal resistance
Are as follows: first, in accordance with Fig. 8 control strategy to IGBT module and it is heat sink heat, in the process with measurement saturation voltage drop it is similar
Continuous measurement module junction temperature and shell temperature, and as formula 3 calculate history shell temperature standard deviation.
When standard deviation is less than KTCcritWhen think that system enters hot stable state.Into the IGBT module after hot stable state, heat sink and ring
Border constitutes ther mal network as shown in Figure 9.Acquire V at this timeceWith heated current IhCalculate heating power PH=Vce×IH, according to thermal resistance
Definition 4 calculates IGBT module crust thermal resistance Rth_JC.Wherein junction temperature TjWith shell temperature TcIt is obtained by measuring circuit measurement.
IGBT module crusts thermal resistance measurement precision in addition to depending on measuring circuit design, also will primarily depend upon heat-conducting silicone grease
Smear situation, the selection of shell temperature acquisition reference point and accurate calculating of heating power etc..Expected crust thermal resistance theory is surveyed
± 10% will be not higher than by measuring error.
For the safe and reliable operation for guaranteeing this test platform, guarantee do not occur showing for transient state failure in IGBT ageing process
As configuring reasonable defencive function, being broadly divided into following two levels.
System-level protection.System-level protection main purpose be prevent system overvoltage run caused by bus capacitor damage,
The problems such as IGBT over-voltage breakdown or insulation breakdown.In view of system capacity source is DC side DC power supply and bus connected in parallel
Capacitor, so OVP (overvoltage protection) threshold value of reasonable disposition DC side DC power supply carries out overvoltage protection to whole system,
When over-voltage phenomenon occurs for system, electric power output voltage will be locked into protection threshold value, to protect system integrally without damage.
The protection of IGBT module grade.The transient state failure of IGBT module is generally the excessive caused junction temperature of electric current beyond safe operation
Caused by range, so the protection for IGBT module grade mainly considers overcurrent protection.It mainly solves the problems, such as it is inversion
The shoot through situation of bridge arm, main there are two implementations:
(1) bus current (on rear side of capacitor) is monitored, soft/hard shutdown is carried out to IGBT when finding short circuit current.Detection is female
There are many modes of line current: current Hall, Rogowski coil, the schemes such as sampling resistor.But find in actual use,
After system integration design, current Hall can not be mounted in stack bus bar because its volume is larger, the same one because of system
Change design, the method for external sampling resistor also cannot achieve；Although Rogowski coil can be fixed among busbar, because of its electric current
There are problems for detection accuracy, it is contemplated that guarantees the reliability of platform, therefore does not also select Rogowski coil.So monitoring can not be passed through
Bus current is protected.
(2) IGBT saturation voltage drop is monitored.When shoot through occurs for full-bridge circuit, IGBT electric current is increased rapidly, the both ends CE
Pressure drop also increase, IGBT exits saturation region and enters linear zone, therefore the overcurrent protection for monitoring saturation voltage drop is also referred to as IGBT
Move back saturation protection.This test platform uses the driving for falling the wooden source TX-Da962D model, passes through hardware configuration IGBT tube voltage drop
Protection threshold value is that 8.5V turns off the IGBT of entire platform, and system firmly when detecting that IGBT tube voltage drop is greater than 8.5V
It will not restart again and (T is arranged by softwarerst=+∞), to avoid interfering caused protection false triggering, protection act will
Pass through hardware setting blind area time tblind=3 μ s,.In addition, the alarm signal will be sent to DSP and host computer, after being carried out by DSP
Continuous processing (such as the shutdown of main switch, power supply stop the behaviors such as output) is simultaneously alarmed by host computer.Its timing diagram such as 10
It is shown.Design parameter configuration method, which can refer to, falls the wooden source TX-Da962D product manual.
The major function design cycle of host computer is as shown in figure 11.In platform all devices and device by DSP/SCI,
SPI carries out field digital control, and information is sent to PC host computer by RS232/485, and upper computer software uses MATLAB/
GUI is developed.Host computer mainly realizes following functions: (1) administrator's login system；(2) power parameter is arranged；(3) platform
Control and ager process monitoring；(4) aging characteristics are stored and are checked；(5) platform initialization.
(1) administrator's login system
To guarantee that platform information is not leaked, administrator's login interface is devised, only when username and password is correct
It just can enter system.
(2) power parameter is arranged
Host computer is communicated by serial ports with slave computer DSP, and the power parameter being arranged will be needed to be sent to DSP；DSP passes through string
The power parameter received is sent to power supply and realizes power parameter setting by mouth and power source communications.
(3) platform courses and ager process monitoring
Host computer is opened by serial ports transmission platform, stops order, and DSP orders corresponding control platform to open, stop based on the received.In
In platform operational process, the junction temperature of acquisition, shell temperature data are sent to host computer, host computer real-time display junction temperature shell Wen Bo by DSP
Shape；In addition, the alarm if platform breaks down, platform shutdown is immediately controlled in DSP, and warning message is sent to host computer, upper
Machine carries out corresponding warning message and shows (the excessively high warning of temperature or overcurrent warning).
The aging number of IGBT module is counted by a variable count, and an aging terminates, and count value adds 1 and is shown in
On interface；It is saved in addition, count value is written in Excel file in real time, correctly to show mould when starting platform next time
The aging number of block.
The operation phase of platform indicates that host computer sends platform aged commands, stage_ by variable stage_flag
Flag is 1, and instruction platform is in the ageing step；Host computer sends platform measuring order, and stage_flag 2 is indicated at platform
In measuring phases.When platform is shut down, the value of stage_flag is stored in Excel, to refer to when starting platform next time
Show that platform enters ageing step or measuring phases.When measuring phases terminate, this aging characteristics measured is sent to by DSP
Host computer, host computer carry out the display of corresponding aging characteristics with storage.
(4) aging characteristics are stored and are checked
The aging characteristics received are stored in Excel file, by inputting aging number and institute in host computer interface
The object of inquiry is accordingly transferred the data in Excel file, and is shown in a graphical form.In addition, if desired artificial locate
Data are managed, host computer is provided with " saving data " function, can be another by entire Excel file (including all aging characteristics data)
It is stored to and is arbitrarily designated path.
(5) platform initialization
When a module aging is completed, before starting one new module of aging, need to empty all old of a module
Change data, all aging datas of last module can be emptied by clicking " platform initialization " button.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to restrict the invention, it is all in spirit of the invention and
Made any modification, equivalent replacement and improvement etc., should all be included in the protection scope of the present invention within spirit.
Claims (10)
1. a kind of pulse power AC aging test platform is carried out for the aging conditions to IGBT module under the conditions of pulse power
Test, and the service life of IGBT module is assessed, it is characterised in that: including with lower unit:
Main circuit unit, including full-bridge inverter main circuit and IGBT module driving circuit；Main circuit works in pulse power
Under mode, for simulating complete digestion period；
Measuring circuit unit, including IGBT module saturation voltage drop measuring circuit and IGBT module crust thermal resistance measurement circuit, are used for
Realize the measurement of the saturation voltage drop and crust thermal resistance to IGBT module；
Protect circuit unit, for being protected accordingly to test platform, test platform based on DC bus short circuit current into
Row protection；
Information process unit, for the various information during test to be controlled and handled；
Host computer, for receiving various information that information process unit sends over and being shown and controlled.
2. a kind of pulse power AC aging test platform according to claim 1, it is characterised in that: the main circuit list
Member uses H bridge inverter structure, and the IGBT module of two IGBT encapsulation is added at bus capacitor and at bus, and upper tube is mother
Line capacitance switch, down tube is bus-tie circuit breaker；When upper tube is opened, bus capacitor is allowed to discharge, conversely, then bus capacitor does not discharge；
When down tube is opened, DC power supply or bus capacitor is allowed to provide electric energy to main circuit, conversely, then powering off source by diode resistance
With the connection of main circuit.
3. a kind of pulse power AC aging test platform according to claim 1, it is characterised in that: the IGBT module
Saturation voltage drop measuring circuit using can isolated DC bus high pressure measuring circuit, when corresponding IGBT shutdown, the high pressure of collector
It will be blocked by diode, and protect rear class amplifier and A/D chip；The IGBT module crust thermal resistance measurement is according to thermal resistance definitionJunction temperature is acquired when reaching hot stable state to device and shell temperature is calculated, wherein TjFor junction temperature, TcFor
Shell temperature, PHFor heating power, Rth_JCFor IGBT module crust thermal resistance.
4. a kind of pulse power AC aging test platform according to claim 1, it is characterised in that: the protection circuit
Unit includes system-level protection and the protection of IGBT module grade；The system-level protection is female caused by system overvoltage operation for preventing
Line capacitance damage, IGBT over-voltage breakdown or insulation breakdown；The overvoltage protection threshold value of reasonable disposition DC side DC power supply is to whole
A system carries out overvoltage protection, and when over-voltage phenomenon occurs for system, electric power output voltage is locked into protection threshold value, to protect
Protecting system is integrally without damage；The IGBT module grade protection is main to consider overcurrent protection, and main there are two implementations: first is that
Bus current is monitored, soft/hard shutdown is carried out to IGBT when finding short circuit current；It is another, it is monitoring IGBT saturation voltage drop, when
When shoot through occurs for full-bridge circuit, IGBT electric current is increased rapidly, and the pressure drop at the both ends CE also increases, and IGBT exits saturation region
Into linear zone.
5. a kind of pulse power AC aging test platform according to claim 4, it is characterised in that: related by changing
IGBT driving board resistance sizes configure IGBT driving board protection parameters.
6. a kind of pulse power AC aging test platform according to claim 1, it is characterised in that: seal a half-bridge
The IGBT module reversal connection access bus of dress；When upper down tube is turned off, the anti-paralleled diode in upper tube guarantees capacitor not
Electric discharge；Anti-paralleled diode in down tube blocks the input of power supply；For realizing aging, measurement integration, automation.
7. a kind of pulse power AC aging test platform according to claim 1, it is characterised in that: the information processing
Unit carries out field digital control using DSP/SCI, SPI, and information is sent to host computer by RS232/485.
8. a kind of pulse power AC aging test platform according to claim 1, it is characterised in that: the upper owner
To include following components:
Administrator's login system: it is logged in for administrator, only just can enter system when username and password is correct；
Power parameter setting: for the parameter of DC power supply to be arranged, voltage, electric current and measuring phases including the ageing step
Voltage, electric current；
Platform courses and monitoring: the start and stop of PC control platform；Working platform stage real-time display, including ageing step or survey
The amount stage；Working platform state real-time display, including platform works normally or abnormal work alarm；IGBT module ager process is real
When show, including junction temperature shell temperature waveform, aging characteristics in module aging number, ageing process；
The inquiry of historical data: realizing the storage of IGBT module aging characteristics, and host computer is corresponding by selection querying condition inquiry
The change curve of aging characteristics, querying condition include aging number and aging characteristics；
Platform initialization: for emptying all aging datas of a upper ageing module before starting one new module of aging.
9. a kind of AC aging test of such as pulse power AC aging test platform described in any item of the claim 1 to 8
Method, it is characterised in that: using pulse power inverter platform as research object, it is based on H bridge inversion topological structure, it is old using exchange
Change method is designed degradation platform；Including following part:
Main circuit structure: full-bridge topologies are selected to reduce particular power source buying expenses, under full-bridge topologies, to reach
Same output electric current, busbar voltage and load voltage are original half, and capacity is also original half；In full-bridge topology
Under structure, AC aging test platform is simulation actual condition, is slightly distinguished on control strategy with ordinary inverter, main body
On present output voltage amplitude and output frequency variation；
Aging characteristics are chosen: stress suffered by IGBT is mainly big junction temperature fluctuation and Gao Ping caused by the temperature rise effect of low-frequency current
Equal junction temperature, big junction temperature fluctuation and high average junction temperature mainly affect the bonding line and solder layer of IGBT；Saturation voltage drop and crust heat
Resistance reflects the health status of both materials, the two parameters are set as characteristic quantity to be measured；
Design communication degradation platform: design one is used for the small-sized IGBT degradation platform of laboratory environment, when design,
Make the operating condition of aging platform close to truth as far as possible；Consider under two different operating conditions, the service life of IGBT is with the presence or absence of larger
Difference.
10. a kind of pulse power AC aging test method according to claim 9, it is characterised in that: two kinds of different works
Condition includes nine level single-phase inversion circuits and two level single-phase inversion circuits, and there are four IGBT to bear mother simultaneously for nine level circuits
Line voltage, and only one IGBT of two level circuits bears busbar voltage；Put up entire nine level and two-level inversion circuit
Later, electroanalysis is carried out to IGBT, i.e., loss analysis is carried out in operation to IGBT；After establishing IGBT ther mal network model,
IGBT junction temperature waveform is obtained after recycling under nine level and two level respectively 18 times, provides foundation for subsequent life appraisal.
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