CN106324472B - A kind of contactless current transformer IGBT module state monitoring method - Google Patents

A kind of contactless current transformer IGBT module state monitoring method Download PDF

Info

Publication number
CN106324472B
CN106324472B CN201610819709.3A CN201610819709A CN106324472B CN 106324472 B CN106324472 B CN 106324472B CN 201610819709 A CN201610819709 A CN 201610819709A CN 106324472 B CN106324472 B CN 106324472B
Authority
CN
China
Prior art keywords
igbt
current transformer
turn
igbt module
state monitoring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201610819709.3A
Other languages
Chinese (zh)
Other versions
CN106324472A (en
Inventor
向大为
张忻庾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Langxin (Shanghai) Electronic Technology Co.,Ltd.
Original Assignee
Tongji University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tongji University filed Critical Tongji University
Priority to CN201610819709.3A priority Critical patent/CN106324472B/en
Publication of CN106324472A publication Critical patent/CN106324472A/en
Application granted granted Critical
Publication of CN106324472B publication Critical patent/CN106324472B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/27Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects surrounding elements

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Inverter Devices (AREA)

Abstract

The present invention relates to a kind of contactless current transformer IGBT module state monitoring methods, include the following steps:S1:The output current phase of current transformer is measured, and measures the watchcase temperature of current transformer IGBT module;S2:IGBT equivalent turn-off times and IGBT cut-off currents are extracted from output current phase, the IGBT equivalent turn-off times be output current phase high-frequency oscillation signal in correspond to time of first wave head or trough caused by IGBT module shutdown, IGBT cut-off currents are corresponding electric current at the time of starting to occur high-frequency oscillation signal with output current phase;S3:Obtain the turn-off characteristic curve of reflection current transformer IGBT module operating status.Compared with prior art, the present invention can conveniently measure turn-off characteristic of all IGBT devices under different current conditions, suitable for the converter system of various structures, the operational reliability of converter system is helped to improve, has many advantages, such as that simplicity, safety, applicability are good.

Description

A kind of contactless current transformer IGBT module state monitoring method
Technical field
The present invention relates to a kind of current transformer state monitoring methods, more particularly, to a kind of contactless current transformer IGBT module State monitoring method.
Background technology
Current transformer is a kind of electrical energy changer, is widely used in generation of electricity by new energy, electric vehicle, rail traffic, aviation The fields such as space flight and metallurgy.As the core devices of current transformer, IGBT module failure can cause entire converter system to run It interrupts, or even causes safety accident and heavy economic losses.Therefore, the safety in operation of IGBT module and integrity problem be increasingly It is prominent.
The process of IGBT failures mostly experience gradual change development, IGBT Condition Monitoring Technologies utilize various detections in real system With analysis means to reflecting that the various variables of operative state are monitored, and device is worked as in conjunction with system operation historical record Preceding operating status is assessed.IGBT Condition Monitoring Technologies can effectively improve converter system safety in operation and reliability.One Aspect, the fault pre-diagnosing technology based on status monitoring can find failure before IGBT module fails and take in time corresponding Measure improves system operation safety to avoid accident from occurring and heavy economic losses;On the other hand, according to device shape State information formulates the converter system maintenance project based on state and can effectively reduce downtime, maintenance cost and promote O&M effect Rate significantly improves the reliability and economy of system operation.
Different according to the type of monitored state variable variable, current IGBT state monitoring methods can be divided into static monitoring techniques Method and dynamic monitor method.Static monitoring techniques method is in IGBT or when cut-off state measures, and such method is usually surveyed Measure IGBT saturation voltage drops Vce(sat), short circuit current Isc, leakage current IlkEqual static state variables;Dynamic monitor method is in IGBT Open or turn off process in measure, such method usually measures IGBT on/off time Ton/Toff, Miller platform electricity Press Vgp, on/off delay time Tdon/TdoffEtc. dynamic state variables.
[1]Chinese patent CN104849644A discloses a kind of IGBT condition detection circuit and the state-detection sides IGBT Method measures the collection emitter voltage V of IGBT using specialized circuitryce, and signal is controlled according to the output signal of circuit and IGBT gate poles Effectively judge IGBT be in open, turn off, abnormal shutdown or short-circuit condition.But after this state monitoring method belongs to failure Detection, cannot assess the health status of IGBT in real time, therefore can not be identified to initial failure and take phase in time Measure is answered to avoid accident and loss.
Wen Xian [2]"U.M.Choi,F.Blaabjerg,S.Munk-Nielsen,et al.Condition monitoring of IGBT module for reliability improvement of power converters[C] .IEEE Transportation Electrification Conference and Expo,2016:602-607 " utilizes spy The collector voltage detection circuit very designed and status monitoring algorithm, according to the saturation voltage drop V of IGBTce(sat)With electric current, junction temperature The variation of operation characteristic the operating status of IGBT module is assessed, improve the reliability of current transformer.But saturation voltage drop number Value magnitude is very big with DC bus-bar voltage gap and switchs front and back change dramatically, therefore accurate measure of saturation voltage drop fills to measuring The performance requirements such as resolution ratio, the dynamic characteristic set are higher.In addition, document propose condition detection method need to converter system into Row is transformed and installs additional measuring device, and field conduct is not easy to.
Wen Xian [3]"P.Sun,C.Gong,X.Du,et al.Condition Monitoring IGBT Module Bond Wires Fatigue Using Short-Circuit Current Identification[J].IEEE Transactions On Power Electronics, 2016 " under the premise of not damaging IGBT module, and IGBT short circuit electricity is measured by short circuit experiment Flow IscIt is monitored with junction temperature, the relationship of gate voltage and para-linkage thread breakage degree, to improve the reliability of IGBT module.But The method need to reduce IGBT gate voltages in fault detect, can not on-line real time monitoring, Practical is difficult.
Wen Xian [4]"H.Luo,Y.Chen,P.Sun,et al.Junction Temperature Extraction Approach With Turn-Off Delay Time for High-Voltage High-Power IGBT Modules [J].IEEE Transactions on Power Electronics,2016,31(7):When 5122-5132 " is by turn-off delay Between TdoffAs temperature sensitive change measurement IGBT module junction temperature, the health status of prediction power device.The method needs measurement module to send out Emitter-base bandgap grading and auxiliary transmission interpolar voltage VeE, IGBT is packaged into discrete component in real system or module is mounted in current transformer Portion, gate pole variable field measure difficult.
Wen Xian [5]"Bryant A T,Mawby P A,Palmer P R,et al.Exploration of power device reliability using compact device models and fast electro-thermal simulation[C].IEEE Industry Applications Conference,2006:1465-1472 " and Wen Xian [6] “Musallam M,Johnson C M,Yin C,et al.Real-time life consumption power modules prognosis using on-line rainflow algorithm in metro applications[C].IEEE Energy Conversion Congress and Exposition(ECCE),2010:970-977 " utilizes the compact electric heating of IGBT Model and current transformer fast electric heating emulation technology, under the conditions of converter system operating condition is continually changing to IGBT module into Row " online " life prediction.But whether life prediction result accurately depends on model accuracy (device reliability mould in this method Type, electrothermic model).In view of the complicated various and device state shadow of the dispersibility of device parameters, fault mode in real system The factors such as junction temperature estimation are rung, the technology current transformer IGBT module service life difficult to realize is accurately predicted.
Invention content
It is an object of the present invention to overcome the above-mentioned drawbacks of the prior art and provide a kind of contactless unsteady flows Device IGBT module state monitoring method can be measured conveniently in current transformer using the IGBT equivalent turn-off times as significant condition variable Turn-off characteristic of all IGBT devices under different current conditions is suitable for the converter system of various structures, helps to improve The operational reliability of converter system has many advantages, such as that simplicity, safety, applicability are good.
The purpose of the present invention can be achieved through the following technical solutions:
A kind of contactless current transformer IGBT module state monitoring method includes the following steps:
S1:The output current phase i of current transformer is measured using non-contact electric current measurement element, and measures current transformer IGBT moulds The watchcase temperature T of blockc
S2:The equivalent turn-off time t of IGBT are extracted from output current phase isw.offWith IGBT cut-off currents Ioff, described Correspond to caused by IGBT module shutdown first in the high-frequency oscillation signal that the IGBT equivalent turn-off times are output current phase i The time t of wave head or troughsw.off, the IGBT cut-off currents IoffTo start higher-order of oscillation letter occur with output current phase i Number at the time of corresponding electric current;
S3:Obtain the IGBT turn-off characteristic curves of reflection current transformer IGBT module operating status, the IGBT turn-off characteristics Curve is in watchcase temperature TcUnder the equivalent turn-off time t of IGBTsw.offWith IGBT cut-off currents IoffFunctional relation.
The high-frequency oscillation signal refers to oscillator signal of the frequency range in 150kHz~30MHz.
The IGBT turn-off characteristics curve that scene measures is compared with the IGBT turn-off characteristic curves under normal operating conditions, If the IGBT turn-off characteristic curves that scene measures occur more than the variation of setting allowable range, assert that current transformer IGBT module is transported Row state changes.
The allowable range that sets is less than or equal to 0.5% as departure absolute value.
The band of the non-contact electric current measurement element is wider than 500kHz.
The watchcase temperature TcThe temperature-measuring element of installation carried using IGBT module or additional is measured.
Compared with prior art, the present invention has the following advantages:
1) engineering construction is easy:With Xian Youjishu [1]-[4]It compares, the method for the present invention is based on being caused by IGBT turn off process The current transformer output current phase higher-order of oscillation first wave head (or trough) time it is just consistent with IGBT turn off process Basic principle obtains the switching characteristic of IGBT by measuring current transformer output current phase, and this method need not be inside current transformer It is implanted into detection circuit, field conduct is easy.
2) safe:With Xian Youjishu [3],[4]It compares, the method for the present invention is by non-contacting mode in engineering site Measure current transformer output current phase, the current measurement device of use with converter system without directly electrical connection, and can be not Status monitoring is implemented to IGBT online under the premise of influence system normal operation, it is ensured that the safety of system.
3) applicability is good:Compared with prior art, the method for the present invention is suitable for the converter system of various topological structures.Nothing By the current transformer (such as three level neutral point clamper current transformers, modular multi-level converter) of which kind of structure, output current phase The higher-order of oscillation is all that alternation switch generates in certain sequence by each IGBT device inside current transformer.The method of the present invention passes through measurement Current transformer output current phase higher-order of oscillation feature can obtain the switching characteristic of each IGBT device in the same phase bridge arm of current transformer, And current transformer IGBT module health status is monitored according to the variation of IGBT turn-off characteristics.
Description of the drawings
Fig. 1 is the method for the present invention work flow diagram;
Fig. 2 is the schematic diagram that the method for the present invention is applied on current transformer;
Fig. 3 is the schematic diagram defined with cut-off current the current transformer IGBT equivalent turn-off times;
Fig. 4 is current transformer IGBT module status monitoring experimental result schematic diagram.
Specific implementation mode
The present invention is described in detail with specific embodiment below in conjunction with the accompanying drawings.The present embodiment is with technical solution of the present invention Premised on implemented, give detailed embodiment and specific operating process, but protection scope of the present invention is not limited to Following embodiments.
The present invention is based on first wave head of the output current of converter higher-order of oscillation caused by IGBT turn off process (or waves Paddy) the time just basic principle consistent with IGBT turn off process, propose a kind of contactless current transformer IGBT module state Monitoring method includes the following steps as depicted in figs. 1 and 2:
S1:The output current phase i that non-contact electric current measurement element measures current transformer is installed, and installs or utilize IGBT moulds The included temperature-measuring element of block measures the watchcase temperature T of current transformer IGBT modulec.Wherein, non-contact electric current measurement element Enough bandwidth are required, band is wider than 500kHz, to measure the high-frequency oscillation signal in current transformer output current phase.It is existing Field high speed measures output current phase i and watchcase temperature TcAnd continuously record data.
S2:The equivalent turn-off time t of IGBT are extracted from output current phase isw.offWith IGBT cut-off currents Ioff
As shown in figure 3, the IGBT equivalent turn-off times are defined as the high-frequency oscillation signal of output current phase i by the method for the present invention In correspond to the time t of first wave head or trough caused by IGBT module shutdownsw.off, and as significant condition variable; Simultaneously also by IGBT cut-off currents IoffCorresponding electricity at the time of being defined as starting to occur high-frequency oscillation signal with output current phase i Stream, at the time of as IGBT turn off process starts at the time of output current phase i starts to occur high-frequency oscillation signal.Wherein, high frequency Oscillator signal refers to oscillator signal of the frequency range in 150kHz~30MHz, corresponds to the frequency of Contacted EMI signal Range, this frequency range can react the off state of IGBT well, other disturbing factors are smaller.
S3:The IGBT turn-off characteristic curves of reflection current transformer IGBT module operating status are obtained, IGBT turn-off characteristics are defined Curve is in certain watchcase temperature TcUnder the equivalent turn-off time t of IGBTsw.offWith IGBT cut-off currents IoffFunctional relation.It is logical The turn-off characteristic curve of current transformer IGBT under condition of different temperatures can be obtained by crossing the data that processing scene measures.It is surveyed using scene The IGBT turn-off characteristics obtained can implement effectively assessment to current transformer IGBT power module operating status and fault condition.If it was found that There is a degree of variation (such as deviate, deform) in turn-off characteristic, you can assert that IGBT module operating status changes.
In current transformer IGBT module During Process of Long-term Operation solder layer is easy to happen under temperature cycles and power cycle effect Aging.Solder layer aging generate rupture, cavity can hinder igbt chip heat loss, cause temperature increase even finally burn Failure.The method of the present invention can detect that the variation of IGBT module health status, is diagnosed to be power module solder layer in time and occurs always Change.
Example:Using the method for the present invention to IGBT module in two level current transformer of 380V/10kW three-phases before and after failure (FF50R12RT4) IGBT turn-off characteristics tsw.off=f (Ioff) be tested.As shown in experimental result picture 4, pass through comparison IGBT turn-off characteristics f (I before and after failureoff) offset can find that the health status of IGBT module changes.Implementation process is such as Under:
1. installing current probe in converter system A phase output terminals.Current probe model CP8030A, bandwidth are 50MHz, for measuring the high-frequency oscillation signal in current transformer A phase output current phases and recording cut-off current Ioff.Use thermocouple Measure IGBT module watchcase temperature Tc.This patent method can monitor the state of all IGBT pipes in certain phase bridge arm, if you need to monitor The method need to be only extended to other bridge arms by the IGBT of other phase bridge arms, or specific to the circuit where some IGBT outputs On.
2. each bridge arm of current transformer is using the trouble-free IGBT power module of health, operation converter system is in load condition (such as nominal load), using high speed digital oscilloscope in-site measurement current transformer output current phase signal and continuously record data, It measures simultaneously and records IGBT module shell temperature.
3. the equivalent turn-off time, cut-off current and the turn-off characteristic that define according to the method for the present invention are surveyed by handling scene Data IGBT turn-off characteristic curve f (I when obtaining 25 DEG C of IGBT module watchcase temperatureoff).It is finally all equivalent by what is measured Turn-off time is stored in two-dimensional table with cut-off current value to obtain the IGBT turn-off characteristic f (I of healthy IGBT moduleoff)_1。
4. converter system is out of service, A phase bridge arm power modules are replaced with to the IGBT power that solder layer aging occurs Module repeats step 1 to step 3, measures the IGBT turn-off characteristic f (I of aging IGBT moduleoff)_2。
5. by the IGBT turn-off characteristic f (I of healthy IGBT moduleoffThe IGBT turn-off characteristics f of) _ 1 and aging IGBT module (IoffIt draws in Fig. 4) _ 2.When identical watchcase temperature Tc, under the conditions of flowing through same current, solder layer aging IGBT module Turn-off time more equivalent than the IGBT of health module IGBT equivalent turn-off times long few tens of nano-seconds, the IGBT turn-off characteristics before and after aging It is deviated, and degrees of offset is more than the normal allowable range (being caused by measurement error) of setting, the normal permission of setting Ranging from departure absolute value is less than or equal to 0.5%.Therefore, the IGBT turn-off characteristics measured using scene, can be to current transformer IGBT power module operating status implements effectively assessment with fault condition.
It analogously, can three level (NPC) clamped to neutral point, modular multilevel (MMC) etc. using the method for the present invention IGBT module in all kinds of converter systems carries out status monitoring.

Claims (6)

1. a kind of contactless current transformer IGBT module state monitoring method, including:
S1:The output current phase i of current transformer is measured using non-contact electric current measurement element, and measures current transformer IGBT module Watchcase temperature Tc
It is characterized in that, further comprising the steps of:
S2:The equivalent turn-off time t of IGBT are extracted from output current phase isw.offWith IGBT cut-off currents Ioff, described IGBT etc. Imitate the turn-off time be output current phase i high-frequency oscillation signal in correspond to the IGBT module shutdown caused by first wave head or The time t of person's troughsw.off, the IGBT cut-off currents IoffFor with output current phase i start to occur high-frequency oscillation signal when Carve corresponding electric current;
S3:Obtain the IGBT turn-off characteristic curves of reflection current transformer IGBT module operating status, the IGBT turn-off characteristics curve For in watchcase temperature TcUnder the equivalent turn-off time t of IGBTsw.offWith IGBT cut-off currents IoffFunctional relation.
2. a kind of contactless current transformer IGBT module state monitoring method according to claim 1, which is characterized in that institute It refers to oscillator signal of the frequency range in 150kHz~30MHz to state high-frequency oscillation signal.
3. a kind of contactless current transformer IGBT module state monitoring method according to claim 1, which is characterized in that existing The IGBT turn-off characteristics curve that field measures is compared with the IGBT turn-off characteristic curves under normal operating conditions, if scene measures IGBT turn-off characteristic curves occur more than setting allowable range variation, then assert current transformer IGBT module operating status occur Variation.
4. a kind of contactless current transformer IGBT module state monitoring method according to claim 3, which is characterized in that institute State set allowable range be departure absolute value be less than or equal to 0.5%.
5. a kind of contactless current transformer IGBT module state monitoring method according to claim 1, which is characterized in that institute The band for stating non-contact electric current measurement element is wider than 500kHz.
6. a kind of contactless current transformer IGBT module state monitoring method according to claim 1, which is characterized in that institute State watchcase temperature TcThe temperature-measuring element of installation carried using IGBT module or additional is measured.
CN201610819709.3A 2016-09-13 2016-09-13 A kind of contactless current transformer IGBT module state monitoring method Active CN106324472B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610819709.3A CN106324472B (en) 2016-09-13 2016-09-13 A kind of contactless current transformer IGBT module state monitoring method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610819709.3A CN106324472B (en) 2016-09-13 2016-09-13 A kind of contactless current transformer IGBT module state monitoring method

Publications (2)

Publication Number Publication Date
CN106324472A CN106324472A (en) 2017-01-11
CN106324472B true CN106324472B (en) 2018-10-26

Family

ID=57787142

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610819709.3A Active CN106324472B (en) 2016-09-13 2016-09-13 A kind of contactless current transformer IGBT module state monitoring method

Country Status (1)

Country Link
CN (1) CN106324472B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108627709A (en) * 2017-03-15 2018-10-09 中电普瑞电力工程有限公司 A kind of hookup and method of MMC submodules accelerated aging
KR102023954B1 (en) * 2018-02-07 2019-09-23 엘에스산전 주식회사 Monitoring and load controlling system of distribution panel
CN109738773B (en) * 2018-06-19 2021-07-16 北京航空航天大学 IGBT module service life prediction method under non-steady working condition
CN110133472B (en) * 2019-06-04 2020-05-19 华北电力大学 Non-contact type working parameter measuring method of IGBT chip
CN110501625B (en) * 2019-09-12 2024-03-08 荣信汇科电气股份有限公司 On-line measuring circuit for voltage drop of IGBT saturation tube
CN111142002B (en) * 2020-01-13 2022-04-29 全球能源互联网研究院有限公司 Parallel chip temperature uniformity detection method and device
CN112067965A (en) * 2020-09-15 2020-12-11 哈尔滨理工大学 IGBT module health state monitoring system capable of predicting service life
CN112986784B (en) * 2021-04-21 2021-09-10 国网江西省电力有限公司电力科学研究院 Abnormity identification method and device for high-power welding type IGBT module

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101533064A (en) * 2008-03-14 2009-09-16 东芝电梯株式会社 Longevity diagnostic device of power conversion apparatus
CN103066819A (en) * 2012-12-03 2013-04-24 深圳市汇川技术股份有限公司 Insulated gate bipolar transistor (IGBT) over-current protection circuit
CN104764991A (en) * 2015-04-17 2015-07-08 孟异山 Method for detecting running state of phase-changing circuit thyristor of high-voltage DC converter valve
CN105004953A (en) * 2015-07-21 2015-10-28 南车株洲电力机车研究所有限公司 Method for detecting work state of converter
KR20150141404A (en) * 2014-06-10 2015-12-18 (주) 모터에이드 Inverter and method for contolling the same
CN105510792A (en) * 2015-12-08 2016-04-20 同济大学 Current transformer IGBT power module field double-pulse testing system and method
WO2016133168A1 (en) * 2015-02-19 2016-08-25 国立大学法人九州工業大学 Method and apparatus for detecting magnetic field distribution of electric current in bonding wires of power semiconductor devices, and method and apparatus for inspection and diagnosis of said distribution

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9431386B2 (en) * 2014-05-22 2016-08-30 Avago Technologies General Ip (Singapore) Pte. Ltd. Current sensing of emitter sense insulated-gate bipolar transistor (IGBT)

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101533064A (en) * 2008-03-14 2009-09-16 东芝电梯株式会社 Longevity diagnostic device of power conversion apparatus
CN103066819A (en) * 2012-12-03 2013-04-24 深圳市汇川技术股份有限公司 Insulated gate bipolar transistor (IGBT) over-current protection circuit
KR20150141404A (en) * 2014-06-10 2015-12-18 (주) 모터에이드 Inverter and method for contolling the same
WO2016133168A1 (en) * 2015-02-19 2016-08-25 国立大学法人九州工業大学 Method and apparatus for detecting magnetic field distribution of electric current in bonding wires of power semiconductor devices, and method and apparatus for inspection and diagnosis of said distribution
CN104764991A (en) * 2015-04-17 2015-07-08 孟异山 Method for detecting running state of phase-changing circuit thyristor of high-voltage DC converter valve
CN105004953A (en) * 2015-07-21 2015-10-28 南车株洲电力机车研究所有限公司 Method for detecting work state of converter
CN105510792A (en) * 2015-12-08 2016-04-20 同济大学 Current transformer IGBT power module field double-pulse testing system and method

Also Published As

Publication number Publication date
CN106324472A (en) 2017-01-11

Similar Documents

Publication Publication Date Title
CN106324472B (en) A kind of contactless current transformer IGBT module state monitoring method
CN106324466B (en) A kind of pre- diagnostic method of current transformer IGBT module field failure
Pazouki et al. Fault diagnosis and fault-tolerant control operation of nonisolated DC–DC converters
Sun et al. Online condition monitoring for both IGBT module and DC-link capacitor of power converter based on short-circuit current simultaneously
CN107202947B (en) A kind of efficient thyristor valves component test system and test method
CN102788645B (en) Infrared monitoring system for temperature rise of electric connecting point of electrical equipment and monitoring method
CN103454580B (en) A kind of circuit-breaker switching on-off coil characteristics proving installation
CN105510792A (en) Current transformer IGBT power module field double-pulse testing system and method
CN106291305B (en) A kind of current transformer IGBT module fault pre-diagnosing method based on switching characteristic
CN103399241A (en) Distribution transformer fault diagnosis system and method based on relation between temperature rise and load
CN105158667B (en) A kind of current transformer power diode junction temperature measurement System and method for
CN111596160A (en) MMC converter valve submodule online monitoring method and system
CN110470967A (en) A kind of pulse power AC aging test platform and test method
CN101975911A (en) Earth fault judging method for overhead line fault indicator
CN104764991A (en) Method for detecting running state of phase-changing circuit thyristor of high-voltage DC converter valve
CN106018991A (en) Power distribution network ferroresonance and single phase earth fault calculating analysis method and device
Xiang et al. Online ESR monitoring of DC-link capacitor in voltage-source-converter using damping characteristic of switching ringings
CN102998529A (en) Insulation resistance testing method
Zhou et al. Monitoring chip fatigue in an IGBT module based on grey relational analysis
Huang et al. Overview of recent progress in condition monitoring for insulated gate bipolar transistor modules: Detection, estimation, and prediction
CN202939279U (en) Test device of direct current circuit breaker
Anderson et al. Online algorithm for early stage fault detection in IGBT switches
Liu et al. A parameter self-correcting thermal network model considering IGBT module solder layer aging
CN111506993A (en) On-site testing method and system for commutation failure protection
CN104007344A (en) Novel IGBT parallel performance testing method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20211025

Address after: 200091 first floor, 2300 Yangshupu Road, Yangpu District, Shanghai (centralized registration place)

Patentee after: Langxin (Shanghai) Electronic Technology Co.,Ltd.

Address before: 200092 Siping Road 1239, Shanghai, Yangpu District

Patentee before: TONGJI University

TR01 Transfer of patent right