CN106324472A - Non-contact converter IGBT module state monitoring method - Google Patents
Non-contact converter IGBT module state monitoring method Download PDFInfo
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- CN106324472A CN106324472A CN201610819709.3A CN201610819709A CN106324472A CN 106324472 A CN106324472 A CN 106324472A CN 201610819709 A CN201610819709 A CN 201610819709A CN 106324472 A CN106324472 A CN 106324472A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/27—Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects surrounding elements
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Abstract
The invention relates to a non-contact converter IGBT module state monitoring method. The non-contact converter IGBT module state monitoring method comprises steps that S1, output phase current of a converter is measured, and a meter housing temperature of a converter IGBT module is measured; S2, IGBT equivalent turn-off time and IGBT turn-off current are extracted from the output phase current, and the IGBT equivalent turn-off time is the high frequency oscillation signal of the output phase current corresponding to first wave front or wave trough time caused by the turn-off of the IGBT module, and the IGBT turn-off current is the current corresponding to the time of the occurrence of the high frequency oscillation signal of the output phase current;S3, the turn-off characteristic curve used for reflecting the operation state of the converter IGBT module is acquired. Compared with the prior art, the turn-off characteristics of the IGBT device under different current conditions are measured conveniently, and the non-contact converter IGBT module state monitoring method is suitable for converter systems having various structures, and the improving of the operation stability of the converter system is facilitated, and therefore the non-contact converter IGBT module state monitoring method has advantages of simplicity, safety, and good applicability.
Description
Technical field
The present invention relates to a kind of current transformer state monitoring method, especially relate to a kind of contactless current transformer IGBT module
State monitoring method.
Background technology
Current transformer is a kind of electrical energy changer, is widely used in generation of electricity by new energy, electric automobile, track traffic, aviation
The field such as space flight and metallurgy.As the core devices of current transformer, IGBT module fault may result in whole converter system and runs
Interrupt, even cause security incident and heavy economic losses.Therefore, the safety in operation of IGBT module is with integrity problem day by day
Prominent.
In real system, IGBT lost efficacy and mostly experienced the process of gradual change development, and IGBT Condition Monitoring Technology utilizes various detection
With analysis means, the various variablees of reflection operative state are monitored, and device is worked as by coupling system history run record
Front running status is estimated.IGBT Condition Monitoring Technology can be effectively improved converter system safety in operation and reliability.One
Aspect, the fault pre-diagnosing technology based on status monitoring can find fault before IGBT module lost efficacy and take corresponding in time
Measure, thus avoid accident to occur and heavy economic losses, improve system safety in operation；On the other hand, according to device shape
State information is formulated converter system maintenance project based on state and is effectively reduced downtime, maintenance cost and promotes O&M effect
Rate, significantly improves system reliability of operation and economy.
Different according to monitored state variable type of variables, current IGBT state monitoring method can be divided into static monitoring techniques
Method and dynamic monitor method.Static monitoring techniques method is at IGBT or measures during cut-off state, and this type of method is generally surveyed
Amount IGBT saturation voltage drop Vce(sat), short circuit current Isc, leakage current IlkDeng static state variables；Dynamic monitor method is at IGBT
Opening or measure in turn off process, this type of method generally measures IGBT on/off time Ton/Toff, Miller platform electricity
Pressure Vgp, on/off T time delaydon/TdoffEtc. dynamic state variables.
[1] Chinese patent CN104849644A discloses a kind of IGBT condition detection circuit and IGBT state-detection side
Method, utilizes specialized circuitry to measure the collection emitter voltage V of IGBTce, and according to the output signal of circuit and IGBT gate pole control signal
Effectively judge IGBT be in open, turn off, abnormal shutdown or short-circuit condition.But after this state monitoring method belongs to fault
Detection, it is impossible to the health status of IGBT is carried out real-time assessment, therefore initial failure cannot be identified and take phase in time
Measure is answered to avoid accident and loss.
Document [2] " U.M.Choi, F.Blaabjerg, S.Munk-Nielsen, et al.Condition
monitoring of IGBT module for reliability improvement of power converters[C]
.IEEE Transportation Electrification Conference and Expo, 2016:602-607 " utilize spy
The collector voltage testing circuit of different design and status monitoring algorithm, according to the saturation voltage drop V of IGBTce(sat)With electric current, junction temperature
The change of operation characteristic the running status of IGBT module is estimated, improve the reliability of current transformer.But saturation voltage drop number
Value magnitude and DC bus-bar voltage gap very greatly and drastically change before and after switch, and therefore accurately measuring of saturation voltage drop fills measuring
The performance requirements such as the resolution put, dynamic characteristic are higher.Additionally, converter system need to be entered by the condition detection method that document proposes
Row transformation also installs extra measurement apparatus, is not easy to field conduct.
Document [3] " P.Sun, C.Gong, X.Du, et al.Condition Monitoring IGBT Module Bond
Wires Fatigue Using Short-Circuit Current Identification[J].IEEE Transactions
On Power Electronics, 2016 " on the premise of not damaging IGBT module, measure IGBT short circuit electricity by short circuit experiment
Stream IscIt is monitored with junction temperature, the relation of gate voltage para-linkage thread breakage degree, to improve the reliability of IGBT module.But
The method need to reduce IGBT gate voltage in fault detect, it is impossible to on-line real time monitoring, Practical difficulty.
Document [4] " H.Luo, Y.Chen, P.Sun, et al.Junction Temperature Extraction
Approach With Turn-Off Delay Time for High-Voltage High-Power IGBT Modules
[J] .IEEE Transactions on Power Electronics, 2016,31 (7): 5122-5132 " time by turn-off delay
Between TdoffIGBT module junction temperature is measured, it was predicted that the health status of power device as temperature sensitive variable.The method needs measurement module to send out
Emitter-base bandgap grading and auxiliary transmission interpolar voltage VeE, in real system, IGBT is all packaged into discrete component or module is arranged in current transformer
Portion, gate pole variable field measures difficulty.
Document [5] " Bryant A T, Mawby P A, Palmer P R, et al.Exploration of power
device reliability using compact device models and fast electro-thermal
Simulation [C] .IEEE Industry Applications Conference, 2006:1465-1472 " and document [6]
“Musallam M,Johnson C M,Yin C,et al.Real-time life consumption power modules
prognosis using on-line rainflow algorithm in metro applications[C].IEEE
Energy Conversion Congress and Exposition (ECCE), 2010:970-977 " utilize the compact electric heating of IGBT
Model and current transformer fast electric heating emulation technology, enter IGBT module under conditions of converter system operating condition is continually changing
Row " online " biometry.But biometry result the most accurately depends on model accuracy (device reliability mould in the method
Type, electrothermic model).In view of the dispersibility of device parameters, the complicated various and device state shadow of fault mode in real system
Ringing the factor such as junction temperature estimation, this technology is difficulty with the current transformer IGBT module life-span and accurately predicts.
Summary of the invention
Defect that the purpose of the present invention is contemplated to overcome above-mentioned prior art to exist and a kind of contactless unsteady flow is provided
Device IGBT module state monitoring method, using the IGBT equivalence turn-off time as significant condition variable, can conveniently measure in current transformer
All IGBT device turn-off characteristic under different current condition, it is adaptable to the converter system of various structures, is favorably improved
The operational reliability of converter system, has the advantages such as simplicity, safety, the suitability be good.
The purpose of the present invention can be achieved through the following technical solutions:
A kind of contactless current transformer IGBT module state monitoring method comprises the following steps:
S1: use non-contact electric current measurement element to measure the output current phase i of current transformer, and measure current transformer IGBT mould
Watchcase temperature T of blockc；
S2: extract IGBT equivalence turn-off time t from output current phase isw.offWith IGBT cut-off current Ioff, described
The IGBT equivalence turn-off time be output current phase i high-frequency oscillation signal in turn off cause first corresponding to this IGBT module
The time t of wave head or troughsw.off, described IGBT cut-off current IoffFor starting occur that the higher-order of oscillation is believed with output current phase i
Number electric current corresponding to moment；
S3: obtain the IGBT turn-off characteristic curve of reflection current transformer IGBT module running status, described IGBT turn-off characteristic
Curve is in watchcase temperature TcUnder IGBT equivalence turn-off time tsw.offWith IGBT cut-off current IoffFunctional relationship.
Described high-frequency oscillation signal refers to the frequency range oscillator signal at 150kHz～30MHz.
The IGBT turn-off characteristic curve that scene records contrasts with the IGBT turn-off characteristic curve under normal operating conditions,
If the IGBT turn-off characteristic curve that scene records occurs more than the change setting allowed band, then assert current transformer IGBT module fortune
Row state changes.
The described allowed band that sets is less than or equal to 0.5% as departure absolute value.
The band of described non-contact electric current measurement element is wider than 500kHz.
Described watchcase temperature TcThat IGBT module carries or the extra temperature-measuring element installed is used to measure.
Compared with prior art, the invention have the advantages that
1) engineering construction is easy: compared with prior art [1]-[4], the inventive method causes based on by IGBT turn off process
First wave head (or trough) time of the current transformer output current phase higher-order of oscillation just consistent with IGBT turn off process
Ultimate principle, obtains the switching characteristic of IGBT by measuring current transformer output current phase, and the method need not inside current transformer
Implanting testing circuit, field conduct is easy.
2) safety is high: compared with prior art [3], [4], the inventive method by non-contacting mode at engineering site
Measuring current transformer output current phase, the current measurement device of employing and converter system, and can be not without being directly electrically connected
Online IGBT is implemented status monitoring on the premise of the system that affects is properly functioning, it is ensured that the safety of system.
3) suitability is good: compared with prior art, and the inventive method is applicable to the converter system of various topological structure.Nothing
The current transformer (such as three level neutral point clamper current transformers, modular multi-level converter) of which kind of structure of opinion, output current phase
The higher-order of oscillation is all to be produced by internal each IGBT device alternation switch in certain sequence of current transformer.The inventive method is by measuring
Current transformer output current phase higher-order of oscillation feature, can obtain the switching characteristic of each IGBT device in current transformer same phase brachium pontis,
And according to the change of IGBT turn-off characteristic, current transformer IGBT module health status is monitored.
Accompanying drawing explanation
Fig. 1 is the inventive method workflow diagram；
Fig. 2 is the schematic diagram that the inventive method is applied on current transformer；
Fig. 3 is the schematic diagram of current transformer IGBT equivalence turn-off time and cut-off current definition；
Fig. 4 is current transformer IGBT module status monitoring experimental result schematic diagram.
Detailed description of the invention
The present invention is described in detail with specific embodiment below in conjunction with the accompanying drawings.The present embodiment is with technical solution of the present invention
Premised on implement, give detailed embodiment and concrete operating process, but protection scope of the present invention be not limited to
Following embodiment.
The present invention first wave head based on the output current of converter higher-order of oscillation caused by IGBT turn off process (or ripple
Paddy) time just consistent with IGBT turn off process ultimate principle, a kind of contactless current transformer IGBT module state is proposed
Monitoring method, as depicted in figs. 1 and 2, comprises the following steps:
S1: install non-contact electric current measurement element and measure the output current phase i of current transformer, and install or utilize IGBT mould
The temperature-measuring element that block carries measures watchcase temperature T of current transformer IGBT modulec.Wherein, non-contact electric current measurement element
Requirement has enough bandwidth, and band is wider than 500kHz, in order to measure the high-frequency oscillation signal in current transformer output current phase.Existing
Output current phase i and watchcase temperature T are measured at a high speed in fieldcAnd continuously record data.
S2: extract IGBT equivalence turn-off time t from output current phase isw.offWith IGBT cut-off current Ioff。
As it is shown on figure 3, the IGBT equivalence turn-off time is defined as the high-frequency oscillation signal of output current phase i by the inventive method
In turn off first wave head causing or the time t of trough corresponding to this IGBT modulesw.off, and as significant condition variable；
The most also by IGBT cut-off current IoffIt is defined as starting to occur electricity corresponding to the moment of high-frequency oscillation signal with output current phase i
Stream, output current phase i starts occur that the moment of high-frequency oscillation signal is the moment that IGBT turn off process starts.Wherein, high frequency
Oscillator signal refers to the frequency range oscillator signal at 150kHz～30MHz, corresponding to the frequency of Contacted EMI signal
Scope, this frequency range can react the off state of IGBT well, and other interference factors are less.
S3: obtain the IGBT turn-off characteristic curve of reflection current transformer IGBT module running status, defines IGBT turn-off characteristic
Curve is in certain watchcase temperature TcUnder IGBT equivalence turn-off time tsw.offWith IGBT cut-off current IoffFunctional relationship.Logical
Cross the on-the-spot data recorded of process and can obtain the turn-off characteristic curve of current transformer IGBT under condition of different temperatures.Scene is utilized to survey
The IGBT turn-off characteristic obtained, can implement effectively assessment to current transformer IGBT power model running status and failure condition.If finding
There is a certain degree of change (such as skew, deformation etc.) in turn-off characteristic, can assert that IGBT module running status changes.
Current transformer IGBT module During Process of Long-term Operation is susceptible to solder layer under temperature cycles and power cycle effect
Aging.The rupturing of the aging generation of solder layer, cavity can hinder igbt chip heat to scatter and disappear, and cause temperature to raise and the most finally burn
Lost efficacy.The inventive method can detect that the change of IGBT module health status, is diagnosed to be power model solder layer in time and occurs old
Change.
Example: use the inventive method to IGBT module in 380V/10kW three-phase two level current transformer before and after fault
(FF50R12RT4) IGBT turn-off characteristic tsw.off=f (Ioff) be tested.As shown in experimental result Fig. 4, by contrast
IGBT turn-off characteristic f (I before and after faultoff) skew can find that the health status of IGBT module changes.Implementation process is such as
Under:
1. at converter system A phase output terminal, current probe is installed.Current probe model is CP8030A, carries a width of
50MHz, is used for measuring the high-frequency oscillation signal in current transformer A phase output current phase and recording cut-off current Ioff.Use thermocouple
Measure IGBT module watchcase temperature Tc.This patent method can monitor the state of all IGBT pipes in certain phase brachium pontis, as needed monitoring
The IGBT of other phase brachium pontis, only need to be extended to other brachium pontis, or the circuit specific to certain IGBT output place by the method
On.
2. each brachium pontis of current transformer uses healthy trouble-free IGBT power model, runs converter system in load condition
(such as nominal load), utilizes high speed digital oscilloscope in-site measurement current transformer output current phase signal continuously record data,
Measure simultaneously and record IGBT module shell temperature.
3., according to equivalent turn-off time, cut-off current and the turn-off characteristic of the inventive method definition, survey by processing scene
IGBT turn-off characteristic curve f (the I when data obtained obtain IGBT module watchcase temperature 25 DEG Coff).The all equivalences that finally will record
Turn-off time and cut-off current value are stored in two-dimensional table to obtain the IGBT turn-off characteristic f (I of healthy IGBT moduleoff)_1。
4. converter system is out of service, and A phase brachium pontis power model replaces with the IGBT power occurring solder layer aging
Module, repetition step 1, to step 3, records the IGBT turn-off characteristic f (I of aging IGBT moduleoff)_2。
5. by the IGBT turn-off characteristic f (I of healthy IGBT moduleoff) _ 1 and the IGBT turn-off characteristic f of aging IGBT module
(Ioff) _ 2 are drawn in the diagram.During identical watchcase temperature Tc, under the conditions of flowing through same current, the aging IGBT module of solder layer
The IGBT equivalence turn-off time than the IGBT equivalence turn-off time long few tens of nano-seconds of health module, aging before and after IGBT turn-off characteristic
There occurs skew, and degrees of offset exceedes the normal allowed band (being caused by measurement error) of setting, the normal permission of setting
Scope is that departure absolute value is less than or equal to 0.5%.Therefore, utilize the IGBT turn-off characteristic that scene records, can be to current transformer
IGBT power model running status and failure condition implement effectively assessment.
Analogously, utilize the inventive method can clamped three level of centering point (NPC), modular multilevel (MMC) etc.
IGBT module in all kinds of converter systems carries out status monitoring.
Claims (6)
1. a contactless current transformer IGBT module state monitoring method, it is characterised in that comprise the following steps:
S1: use non-contact electric current measurement element to measure the output current phase i of current transformer, and measure current transformer IGBT module
Watchcase temperature Tc；
S2: extract IGBT equivalence turn-off time t from output current phase isw.offWith IGBT cut-off current Ioff, described IGBT etc.
The effect turn-off time be output current phase i high-frequency oscillation signal in corresponding to this IGBT module turn off first wave head causing or
The time t of person's troughsw.off, described IGBT cut-off current IoffFor with output current phase i start to occur high-frequency oscillation signal time
Carve corresponding electric current；
S3: obtain the IGBT turn-off characteristic curve of reflection current transformer IGBT module running status, described IGBT turn-off characteristic curve
For in watchcase temperature TcUnder IGBT equivalence turn-off time tsw.offWith IGBT cut-off current IoffFunctional relationship.
One the most according to claim 1 contactless current transformer IGBT module state monitoring method, it is characterised in that institute
State high-frequency oscillation signal and refer to the frequency range oscillator signal at 150kHz～30MHz.
One the most according to claim 1 contactless current transformer IGBT module state monitoring method, it is characterised in that existing
The IGBT turn-off characteristic curve that field records contrasts, if scene records with the IGBT turn-off characteristic curve under normal operating conditions
IGBT turn-off characteristic curve occur more than set allowed band change, then assert current transformer IGBT module running status occur
Change.
One the most according to claim 3 contactless current transformer IGBT module state monitoring method, it is characterised in that institute
State and set allowed band as departure absolute value less than or equal to 0.5%.
One the most according to claim 1 contactless current transformer IGBT module state monitoring method, it is characterised in that institute
The band stating non-contact electric current measurement element is wider than 500kHz.
One the most according to claim 1 contactless current transformer IGBT module state monitoring method, it is characterised in that institute
State watchcase temperature TcThat IGBT module carries or the extra temperature-measuring element installed is used to measure.
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Cited By (8)
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| CN108627709A (en) * | 2017-03-15 | 2018-10-09 | 中电普瑞电力工程有限公司 | A kind of hookup and method of MMC submodules accelerated aging |
| CN109738773A (en) * | 2018-06-19 | 2019-05-10 | 北京航空航天大学 | IGBT module life-span prediction method under a kind of non-stationary operating condition |
| CN110133472A (en) * | 2019-06-04 | 2019-08-16 | 华北电力大学 | A kind of non-contact operation measurement method of parameters of igbt chip |
| CN110501625A (en) * | 2019-09-12 | 2019-11-26 | 荣信汇科电气技术有限责任公司 | A kind of IGBT saturation tube voltage drop on-line measurement circuit |
| CN111142002A (en) * | 2020-01-13 | 2020-05-12 | 全球能源互联网研究院有限公司 | Parallel chip temperature uniformity detection method and device |
| CN111656630A (en) * | 2018-02-07 | 2020-09-11 | Ls电气株式会社 | Monitoring and load control system for distribution board |
| CN112067965A (en) * | 2020-09-15 | 2020-12-11 | 哈尔滨理工大学 | IGBT module health state monitoring system capable of predicting service life |
| CN112986784A (en) * | 2021-04-21 | 2021-06-18 | 国网江西省电力有限公司电力科学研究院 | Abnormity identification method and device for high-power welding type IGBT module |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108627709A (en) * | 2017-03-15 | 2018-10-09 | 中电普瑞电力工程有限公司 | A kind of hookup and method of MMC submodules accelerated aging |
| CN111656630A (en) * | 2018-02-07 | 2020-09-11 | Ls电气株式会社 | Monitoring and load control system for distribution board |
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| CN111142002A (en) * | 2020-01-13 | 2020-05-12 | 全球能源互联网研究院有限公司 | Parallel chip temperature uniformity detection method and device |
| CN111142002B (en) * | 2020-01-13 | 2022-04-29 | 全球能源互联网研究院有限公司 | Parallel chip temperature uniformity detection method and device |
| CN112067965A (en) * | 2020-09-15 | 2020-12-11 | 哈尔滨理工大学 | IGBT module health state monitoring system capable of predicting service life |
| CN112986784A (en) * | 2021-04-21 | 2021-06-18 | 国网江西省电力有限公司电力科学研究院 | Abnormity identification method and device for high-power welding type IGBT module |
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