CN112649699A - Test method and device for determining device fault point and storage medium - Google Patents
Test method and device for determining device fault point and storage medium Download PDFInfo
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- CN112649699A CN112649699A CN202011455709.2A CN202011455709A CN112649699A CN 112649699 A CN112649699 A CN 112649699A CN 202011455709 A CN202011455709 A CN 202011455709A CN 112649699 A CN112649699 A CN 112649699A
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- 238000010998 test method Methods 0.000 title claims abstract description 17
- 230000015556 catabolic process Effects 0.000 claims abstract description 29
- 238000012360 testing method Methods 0.000 claims abstract description 26
- 230000008859 change Effects 0.000 claims abstract description 25
- 238000012544 monitoring process Methods 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims description 19
- 238000004590 computer program Methods 0.000 claims description 11
- 238000004458 analytical method Methods 0.000 claims description 8
- 230000006872 improvement Effects 0.000 abstract description 8
- 238000013461 design Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 16
- 230000008569 process Effects 0.000 description 12
- 230000006870 function Effects 0.000 description 4
- 230000000670 limiting effect Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 230000036962 time dependent Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/08—Locating faults in cables, transmission lines, or networks
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CN202011455709.2A CN112649699B (en) | 2020-12-10 | 2020-12-10 | Test method and device for determining device fault point and storage medium |
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CN202011455709.2A CN112649699B (en) | 2020-12-10 | 2020-12-10 | Test method and device for determining device fault point and storage medium |
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CN112649699A true CN112649699A (en) | 2021-04-13 |
CN112649699B CN112649699B (en) | 2021-08-10 |
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Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1945305A (en) * | 2006-09-30 | 2007-04-11 | 中国科学院电工研究所 | Test method and device for repeated nanosecond pulse medium breakdown characteristic |
US20090278211A1 (en) * | 2008-05-06 | 2009-11-12 | Korea Institute Of Science And Technology | Composite dielectric thin film, capacitor and field effect transistor using the same, and each fabrication method thereof |
CN101702005A (en) * | 2009-10-28 | 2010-05-05 | 上海宏力半导体制造有限公司 | Time dependent dielectric breakdown parallel testing circuit |
JP2012225772A (en) * | 2011-04-20 | 2012-11-15 | Renesas Electronics Corp | Semiconductor device inspection method and inspection device |
JP2013140759A (en) * | 2012-01-06 | 2013-07-18 | Nissan Motor Co Ltd | Method for inspecting nonaqueous electrolytic secondary battery in short circuit |
CN106908707A (en) * | 2015-12-23 | 2017-06-30 | 中芯国际集成电路制造(上海)有限公司 | A kind of method of testing of gate oxide breakdown voltage |
CN109212401A (en) * | 2018-09-03 | 2019-01-15 | 东南大学 | Avalanche semiconductor failure analysis test method and device based on thermal imaging |
CN109596961A (en) * | 2018-10-23 | 2019-04-09 | 中国电子产品可靠性与环境试验研究所((工业和信息化部电子第五研究所)(中国赛宝实验室)) | The method for testing reliability of GaN device, device and system |
CN111707919A (en) * | 2020-06-29 | 2020-09-25 | 全球能源互联网研究院有限公司 | IGBT device test circuit and test method |
CN111736048A (en) * | 2020-07-16 | 2020-10-02 | 西安交通大学 | Short-time breakdown testing method for magnetic piece insulating medium under high-frequency square wave and sine voltage |
-
2020
- 2020-12-10 CN CN202011455709.2A patent/CN112649699B/en active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1945305A (en) * | 2006-09-30 | 2007-04-11 | 中国科学院电工研究所 | Test method and device for repeated nanosecond pulse medium breakdown characteristic |
US20090278211A1 (en) * | 2008-05-06 | 2009-11-12 | Korea Institute Of Science And Technology | Composite dielectric thin film, capacitor and field effect transistor using the same, and each fabrication method thereof |
CN101702005A (en) * | 2009-10-28 | 2010-05-05 | 上海宏力半导体制造有限公司 | Time dependent dielectric breakdown parallel testing circuit |
JP2012225772A (en) * | 2011-04-20 | 2012-11-15 | Renesas Electronics Corp | Semiconductor device inspection method and inspection device |
JP2013140759A (en) * | 2012-01-06 | 2013-07-18 | Nissan Motor Co Ltd | Method for inspecting nonaqueous electrolytic secondary battery in short circuit |
CN106908707A (en) * | 2015-12-23 | 2017-06-30 | 中芯国际集成电路制造(上海)有限公司 | A kind of method of testing of gate oxide breakdown voltage |
CN109212401A (en) * | 2018-09-03 | 2019-01-15 | 东南大学 | Avalanche semiconductor failure analysis test method and device based on thermal imaging |
CN109596961A (en) * | 2018-10-23 | 2019-04-09 | 中国电子产品可靠性与环境试验研究所((工业和信息化部电子第五研究所)(中国赛宝实验室)) | The method for testing reliability of GaN device, device and system |
CN111707919A (en) * | 2020-06-29 | 2020-09-25 | 全球能源互联网研究院有限公司 | IGBT device test circuit and test method |
CN111736048A (en) * | 2020-07-16 | 2020-10-02 | 西安交通大学 | Short-time breakdown testing method for magnetic piece insulating medium under high-frequency square wave and sine voltage |
Non-Patent Citations (3)
Title |
---|
K. N. MANJULARANI等: "Simulating degradation of TDDB lifetime due to burn-in using pre-conditioning pulses", 《2007 INTERNATIONAL WORKSHOP ON PHYSICS OF SEMICONDUCTOR DEVICES》 * |
刘红侠等: "薄栅介质TDDB效应", 《半导体学报》 * |
辛维平等: "片上栅氧经时击穿失效监测电路与方法", 《电子学报》 * |
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CN112649699B (en) | 2021-08-10 |
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Effective date of registration: 20210611 Address after: 100192 building 3, A District, Dongsheng science and Technology Park, Zhongguancun, 66 Haidian District West Road, Beijing. Applicant after: BEIJING SMARTCHIP MICROELECTRONICS TECHNOLOGY Co.,Ltd. Applicant after: Beijing core Kejian Technology Co.,Ltd. Applicant after: STATE GRID INFORMATION & TELECOMMUNICATION GROUP Co.,Ltd. Applicant after: Institute of Microelectronics of the Chinese Academy of Sciences Address before: 100192 building 3, A District, Dongsheng science and Technology Park, Zhongguancun, 66 Haidian District West Road, Beijing. Applicant before: BEIJING SMARTCHIP MICROELECTRONICS TECHNOLOGY Co.,Ltd. Applicant before: Beijing core Kejian Technology Co.,Ltd. Applicant before: STATE GRID INFORMATION & TELECOMMUNICATION GROUP Co.,Ltd. Applicant before: Institute of Microelectronics of the Chinese Academy of Sciences Applicant before: University OF CHINESE ACADEMY OF SCIENCES |
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