CN106908707A - A kind of method of testing of gate oxide breakdown voltage - Google Patents
A kind of method of testing of gate oxide breakdown voltage Download PDFInfo
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- CN106908707A CN106908707A CN201510975479.5A CN201510975479A CN106908707A CN 106908707 A CN106908707 A CN 106908707A CN 201510975479 A CN201510975479 A CN 201510975479A CN 106908707 A CN106908707 A CN 106908707A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2608—Circuits therefor for testing bipolar transistors
- G01R31/261—Circuits therefor for testing bipolar transistors for measuring break-down voltage or punch through voltage therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
- G01R31/2623—Circuits therefor for testing field effect transistors, i.e. FET's for measuring break-down voltage therefor
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The present invention provides a kind of method of testing of gate oxide breakdown voltage, is related to technical field of semiconductors.Including：Apply operating voltage in the grid of device under test, and judge the state of grid oxygen by testing initialization electric current, test is stopped if grid oxygen is breakdown, if grid oxygen is not breakdown, carry out step：While the grid of device under test applies the first gradually incremental test voltage of some steps and the first leakage current of measurement；Grid again in device under test after the grid of device under test applies each test voltage of step first applies the second test voltage and measures the second leakage current, differ more than ten times when if more than ten times are differed between the first leakage current of adjacent two step or between the second leakage current of adjacent two step, its first corresponding test voltage is recorded as breakdown voltage.Method of testing of the invention, can accurately detect gate oxide breakdown voltage.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of gate oxide breakdown voltage
Method of testing.
Background technology
For the advanced semiconductor processes technology with lower operating voltage, the grid oxygen of core devices
Change the more and more thinner that thickness degree becomes.Yet with the different failure mode (mistakes of normal oxidation layer
Effect mechanism is F_N tunnellings (tunneling) effect, and ultra-thin gate oxide failure mechanism is
Direct tunneling phenomenon) thus traditional method can not monitor grid oxygen and puncture.
Typically for the method for testing that traditional grid oxygen punctures, the electric charge meeting in grid polycrystalline silicon
Conduction band is transitted to from the valence band of polysilicon, as electric field becomes big, can be entered in silica, quilt
Trap is captured.As trapped charge gradually increases, defect path is formed in silica, finally
It is breakdown.But for relatively thin gate oxide, with the increase of electric field, the energy of silica
Band bends, and under big electric field action, electric charge causes oxide layer directly through silica
Puncture.The method of testing that existing grid oxygen punctures mainly includes：On the grid of device under test
Apply measurement voltage, measurement voltage is progressively increased into breakdown voltage from zero, measurement voltage applies
During leakage current, when two neighboring point curent change be more than more than 10 times when, record
Voltage now is breakdown voltage.It is as shown in Figure 1 the test IV curves that thick grid oxygen punctures,
Thicker gate oxide as seen from the figure, it is very slow that defect is produced, and finally punctures, and electric leakage is jumped
Jump.And for puncturing than relatively thin grid oxygen, direct tunnelling is its main failure mode, directly
Tunneling Phenomenon is mainly shown as that e- or h+ are straight due to the big electric field being applied on thin dielectric layer
Tunnelling is connect, its test IV curve is illustrated in figure 2, as seen from the figure with test voltage
Gradually increase, bandwidth narrows, and it is many that defect passes through change, when additional test voltage is increased to
During breakdown critical value, can be narrower with upset, width, defect is easily passed through, and after now puncturing
IV curves it is gentle, therefore be not easy to monitor accurate breakdown voltage.
Therefore, it is to solve above-mentioned technical problem of the prior art, it is necessary to propose a kind of new
The method of testing of gate oxide breakdown voltage.
The content of the invention
A series of concept of reduced forms is introduced in Summary, this will be specific real
Apply further description in mode part.Summary of the invention is not meant to
Attempt to limit the key feature and essential features of technical scheme required for protection, less
Mean the protection domain for attempting to determine technical scheme required for protection.
In order to overcome the problem that presently, there are, the present invention to provide a kind of test of gate oxide breakdown voltage
Method, methods described includes：
Step S1：Apply the operating voltage of the device under test in the grid of device under test, and
Judge the state of grid oxygen by testing initialization electric current, it is right to stop if grid oxygen is breakdown
The test of the device under test, if grid oxygen is not breakdown, step S2 to S3 after carrying out
Test；
Step S2：Some steps are applied gradually with predetermined stepping in the grid of the device under test
While incremental first test voltage and measure the first leakage current of the device under test；
Step S3：After the first test voltage described in each step, then in the device under test
Apply the second test voltage on grid and while measure the second leakage current of the device under test,
Wherein, if differ more than ten times between first leakage current of adjacent two step,
Then first test voltage corresponding to larger first leakage current is recorded as hitting
Voltage is worn, if differ more than ten times between second leakage current of adjacent two step,
First test voltage of larger second leakage current correspondence step is recorded as puncturing
Voltage.
Further, IV songs are drawn using the first test voltage and first leakage current
Line, the 2nd IV curves are drawn using the first test voltage and second leakage current.
Further, grid oxygen state is monitored using the 2nd IV curves, using F-N tunnelling modes
Formula monitors whether the grid oxygen punctures.
Further, first test voltage is started from scratch and gradually increase.
Further, first test voltage since the operating voltage of the device under test gradually
Increase.
Further, the device under test is core devices and/or input and output device.
Further, operating voltage of second test voltage less than or equal to the device under test.
In sum, method of testing of the invention, can accurately detect gate oxide and hit
Voltage is worn, and measuring method is simply easily implemented, and improves the accurate of gate oxide breakdown voltage measurement
Property.
Brief description of the drawings
Drawings below of the invention is in this as a part of the invention for understanding the present invention.It is attached
Embodiments of the invention and its description are shown in figure, for explaining principle of the invention.
In accompanying drawing：
Fig. 1 show using existing gate oxide breakdown voltage method of testing thick grid oxygen is punctured into
The obtained IV curve maps of row test；
Fig. 2 show using existing gate oxide breakdown voltage method of testing thin grid oxygen is punctured into
The obtained IV curve maps of row test；
Fig. 3 A show grid oxygen when not applying operating voltage in one embodiment of the present of invention
The IV curve maps that the method for testing of breakdown voltage is obtained；
Fig. 3 B show that the grid oxygen after the applying operating voltage in one embodiment of the present of invention is hit
Wear the IV curve maps that the method for testing of voltage is obtained；
Fig. 4 shows the combination figure of Fig. 3 A and Fig. 3 B；
Fig. 5 shows the Weibull distribution point diagrams of reliability of the gate oxide Vramp tests；
Fig. 6 is the signal of the method for testing of the gate oxide breakdown voltage of one embodiment of the present of invention
Property flow chart.
Specific embodiment
In the following description, a large amount of concrete details are given to provide to the present invention more
Thoroughly understand.It is, however, obvious to a person skilled in the art that of the invention
Can be carried out without one or more of these details.In other examples, in order to keep away
Exempt to obscure with the present invention, be not described for some technical characteristics well known in the art.
It should be appreciated that the present invention can be implemented in different forms, and it is not construed as office
It is limited to embodiments presented herein.On the contrary, providing these embodiments disclosure will be made thoroughly and complete
Entirely, and will fully convey the scope of the invention to those skilled in the art.In the accompanying drawings,
For clarity, the size and relative size in Ceng He areas may be exaggerated.It is identical attached from start to finish
Icon note represents identical element.
It should be understood that be referred to as when element or layer " ... on ", " with ... it is adjacent ", " being connected to "
Or when " being coupled to " other elements or layer, its can directly on other elements or layer and
It is adjacent, be connected or coupled to other elements or layer, or there may be element or layer between two parties.
Conversely, when element is referred to as " on directly existing ... ", " with ... direct neighbor ", " being directly connected to "
Or when " being directly coupled to " other elements or layer, then in the absence of element or layer between two parties.Should
Understand, although can be used term first, second, third, etc. describe various elements, part,
Area, floor and/or part, these elements, part, area, floor and/or part should not be by these
Term is limited.These terms be used merely to distinguish element, part, area, floor or part with
Another element, part, area, floor or part.Therefore, do not depart from present invention teach that under,
First element discussed below, part, area, floor or part be represented by the second element, part,
Area, floor or part.
Spatial relationship term for example " ... under ", " ... below ", " below ", " ... it
Under ", " ... on ", " above " etc., can describe for convenience herein and by using from
And an element shown in figure or feature are described with other elements or the relation of feature.Should be bright
In vain, in addition to the orientation shown in figure, spatial relationship term is intended to also include using and operating
In device different orientation.If for example, the device upset in accompanying drawing, then, is described as
" below other elements " or " under it " or " under it " element or feature will be orientated
Be other elements or feature " on ".Therefore, exemplary term " ... below " and " ...
Under " may include upper and lower two orientations.Device can additionally be orientated and (be rotated by 90 ° or other
Orientation) and spatial description language as used herein correspondingly explained.
The purpose of term as used herein is only that description specific embodiment and not as this hair
Bright limitation.When using herein, " one " of singulative, " one " and " described/should "
It is also intended to include plural form, unless context is expressly noted that other mode.It is also to be understood that art
Language " composition " and/or " including ", when using in this specification, determine the feature,
The presence of integer, step, operation, element and/or part, but be not excluded for it is one or more its
The presence or addition of its feature, integer, step, operation, element, part and/or group.
When using herein, term "and/or" includes any and all combination of related Listed Items.
Herein with reference to the horizontal stroke of the schematic diagram as desirable embodiment of the invention (and intermediate structure)
Sectional view describes inventive embodiment.As a result, it is contemplated that due to such as manufacturing technology and/
Or from the change of shown shape caused by tolerance.Therefore, embodiments of the invention should not limit to
In the given shape in area shown here, but including inclined due to for example manufacturing caused shape
Difference.For example, be shown as the injection region of rectangle its edge generally there is circle or bending features and
/ or implantation concentration gradient, change rather than the binary from injection region to non-injection regions.Equally,
The surface passed through when by injecting the disposal area for being formed the disposal area and injection can be caused to carry out
Between area in some injection.Therefore, in figure show area be substantially it is schematical, it
Shape be not intended display device area true form and be not intended limit the present invention
Scope.
In order to thoroughly understand the present invention, detailed step will be proposed in following description, so as to
Explain technical scheme proposed by the present invention.Presently preferred embodiments of the present invention is described in detail as follows, so
And in addition to these detailed descriptions, the present invention can also have other embodiment.
Embodiment one
3A, accompanying drawing 3B and Fig. 4, Fig. 5 and Fig. 6 are to of the invention one below in conjunction with the accompanying drawings
The method of testing of the gate oxide breakdown voltage in individual embodiment is described in detail.
In one example, the method for testing of gate oxide breakdown voltage of the invention includes following step
Suddenly：
First, step A1 is performed, the work of the device under test is applied in the grid of device under test
Make voltage, and judge the state of grid oxygen by testing initialization electric current, if grid oxygen is hit
Wear, stop the test to the device under test, if grid oxygen is not breakdown, step after carrying out
The test of rapid S2 to S3.
In this step, operating voltage, measurement work electricity are applied in the grid of device under test first
Stream, if it is breakdown now to have measured gate oxide, for device under test without performing
Testing procedure afterwards, you can terminate test, product initial failure.Therefore, can significantly letter
Change testing process.
Exemplarily, the device under test is core devices and/or input and output device.
If gate oxide is not breakdown, the test of step after carrying out, including：
Step A2 is performed, some steps are applied with predetermined stepping in the grid of the device under test
Gradually while the first incremental test voltage and measure the first electric leakage electricity of the device under test
Stream.
As an example, the gate oxide being related in the embodiment of the present invention predominantly thin gate oxide,
Gate oxide of such as thickness less than 40 angstroms.Wherein, apply first with predetermined stepping to test
Voltage, the wherein predetermined stepping can carry out reasonable set according to the thickness of gate oxide.Can
Selection of land, first test voltage can start from scratch and gradually increase, until realizing gate oxide
Puncture.And because the gate oxide of the device under test under operating voltage does not puncture, therefore institute
Stating the first test voltage can also gradually increase since the operating voltage of the device under test, directly
To realizing puncturing for gate oxide.
Meanwhile, step S3 is can perform, after the first test voltage described in each step, then in institute
State and apply the second test voltage on the grid of device under test and while measure the device under test
Second leakage current,
Wherein, if differ more than ten times between first leakage current of adjacent two step,
Then first test voltage corresponding to larger first leakage current is recorded as hitting
Voltage is worn, if differ more than ten times between second leakage current of adjacent two step,
First test voltage of larger second leakage current correspondence step is recorded as puncturing
Voltage.
Further, work electricity of second test voltage less than or equal to the device under test
Pressure.In the present embodiment, it is preferred that second test voltage is equal to the work of the device under test
Make voltage.
It is worth noting that, after the first leakage current can be obtained the first test voltage is applied,
The first test voltage of corresponding step can be immediately removed, then applies the second test voltage on grid
The second leakage current is tested, if the first leakage current that latter pacing is obtained is than the survey of back
The first leakage current it is big more than 10 times when, you can judge gate oxide it is breakdown, then after
The corresponding first test voltage value of one step can be recorded as breakdown voltage.
If apply on grid the first test voltage obtain the first leakage current after, by its with it is preceding
The first leakage current that one step is obtained compares, and finds not up to more than 10 times of its change, and
The second leakage current is tested in after-applied second test voltage of the first test voltage of corresponding step,
If the second leakage current measured when the second leakage current for now measuring is than its back is big
More than 10 times, then gate oxide breakdown is can determine that, record corresponding first test voltage of the step
It is breakdown voltage.
Specifically, the first test voltage and first leakage current is can be used to draw an IV
Curve (as shown in Figure 3A), the first test voltage and second electric leakage using corresponding step
Electric current draws the 2nd IV curves (as shown in Figure 3 B).Be can be seen that extra by Fig. 3 B
Under the operating voltage of applying, when grid oxygen punctures, electric leakage is significantly increased, it is easy to find upset point.
And combining Fig. 3 A and Fig. 3 B, as shown in figure 4, due to the curve in Fig. 3 B
Therefore upset point it is obvious that be easy to be monitored to, therefore both combine, and take turning over for Fig. 3 B
Voltage in turning point corresponding diagram 3A can be used as the breakdown voltage of gate oxide.
Further, grid oxygen state can be monitored using the 2nd IV curves, using F-N
Whether tunnelling (Fowler-Nordheim Tunneling) grid oxygen described in mode monitoring punctures.F-N
Tunnelling is a field-causing electron tunnelling process.When a larger voltage is applied to polysilicon/bis-
When on silica/silicon structure, the potential barrier in oxide layer can become very precipitous.F-N tunnellings are sent out
The raw voltage on gate oxide crosses SiO more than electronics2Potential barrier when, electronics through oxidation
The potential barrier of layer is triangular barrier.
The Weibull distribution point diagrams of reliability of the gate oxide Vramp tests are shown such as Fig. 5,
As seen from the figure, using method of testing of the invention, for 30A gate oxides (GOX)
It is exactly 5V or so normally to puncture (breakdown) voltage, will not test 15V and not hit also
Wear.
In sum, method of testing of the invention, can accurately detect gate oxide and hit
Voltage is worn, and measuring method is simply easily implemented, and improves the accurate of gate oxide breakdown voltage measurement
Property.
The present invention is illustrated by above-described embodiment, but it is to be understood that, it is above-mentioned
Embodiment is only intended to citing and descriptive purpose, and is not intended to limit the invention to described
Scope of embodiments in.In addition it will be appreciated by persons skilled in the art that the present invention not office
It is limited to above-described embodiment, teaching of the invention can also make more kinds of modifications and repair
Change, these variants and modifications are all fallen within scope of the present invention.It is of the invention
Protection domain is defined by the appended claims and its equivalent scope.
Claims (7)
1. a kind of method of testing of gate oxide breakdown voltage, it is characterised in that methods described includes：
Step S1：Apply the operating voltage of the device under test in the grid of device under test, and
Judge the state of grid oxygen by testing initialization electric current, it is right to stop if grid oxygen is breakdown
The test of the device under test, if grid oxygen is not breakdown, step S2 to S3 after carrying out
Test；
Step S2：Some steps are applied gradually with predetermined stepping in the grid of the device under test
While incremental first test voltage and measure the first leakage current of the device under test；
Step S3：After the first test voltage described in each step, then in the device under test
Apply the second test on grid and measure the second leakage current of the device under test simultaneously,
Wherein, if differ more than ten times between first leakage current of adjacent two step,
Then first test voltage corresponding to larger first leakage current is recorded as hitting
Voltage is worn, if differ more than ten times between second leakage current of adjacent two step,
First test voltage of larger second leakage current correspondence step is recorded as puncturing
Voltage.
2. method of testing according to claim 1, it is characterised in that surveyed using first
Examination voltage and first leakage current draw an IV curves, using the first test voltage and
Second leakage current draws the 2nd IV curves.
3. method of testing according to claim 2, it is characterised in that use described the
Two IV curves monitor grid oxygen state, monitor whether the grid oxygen punctures using F-N tunnelling modes.
4. method of testing according to claim 1, it is characterised in that described first surveys
Examination voltage is started from scratch and gradually increase.
5. method of testing according to claim 1, it is characterised in that described first surveys
Examination voltage gradually increases since the operating voltage of the device under test.
6. method of testing according to claim 1, it is characterised in that the device to be measured
Part is core devices and/or input and output device.
7. method of testing according to claim 1, it is characterised in that described second surveys
Operating voltage of the examination voltage less than or equal to the device under test.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109166842A (en) * | 2018-08-27 | 2019-01-08 | 长江存储科技有限责任公司 | For assessing the test structure and test method of grid oxide layer TDDB polarity difference |
| CN109307831A (en) * | 2018-09-25 | 2019-02-05 | 长江存储科技有限责任公司 | The TDDB test method of grid oxic horizon in integrated circuit |
| CN109444703A (en) * | 2018-10-15 | 2019-03-08 | 上海华虹宏力半导体制造有限公司 | The test method of super-junction device |
| CN112447258A (en) * | 2019-09-05 | 2021-03-05 | 上海交通大学 | Method and system for measuring intrinsic breakdown time of flash memory device |
| CN112649699A (en) * | 2020-12-10 | 2021-04-13 | 北京智芯微电子科技有限公司 | Test method and device for determining device fault point and storage medium |
| CN113253088A (en) * | 2021-06-25 | 2021-08-13 | 上海瞻芯电子科技有限公司 | Transistor gate oxide testing device and system |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109166842A (en) * | 2018-08-27 | 2019-01-08 | 长江存储科技有限责任公司 | For assessing the test structure and test method of grid oxide layer TDDB polarity difference |
| CN109307831A (en) * | 2018-09-25 | 2019-02-05 | 长江存储科技有限责任公司 | The TDDB test method of grid oxic horizon in integrated circuit |
| CN109307831B (en) * | 2018-09-25 | 2020-03-31 | 长江存储科技有限责任公司 | TDDB test method for gate oxide layer in integrated circuit |
| CN109444703A (en) * | 2018-10-15 | 2019-03-08 | 上海华虹宏力半导体制造有限公司 | The test method of super-junction device |
| CN112447258A (en) * | 2019-09-05 | 2021-03-05 | 上海交通大学 | Method and system for measuring intrinsic breakdown time of flash memory device |
| CN112447258B (en) * | 2019-09-05 | 2024-05-28 | 上海交通大学 | Method and system for measuring intrinsic breakdown time of flash memory device |
| CN112649699A (en) * | 2020-12-10 | 2021-04-13 | 北京智芯微电子科技有限公司 | Test method and device for determining device fault point and storage medium |
| CN112649699B (en) * | 2020-12-10 | 2021-08-10 | 北京智芯微电子科技有限公司 | Test method and device for determining device fault point and storage medium |
| CN113253088A (en) * | 2021-06-25 | 2021-08-13 | 上海瞻芯电子科技有限公司 | Transistor gate oxide testing device and system |
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Application publication date: 20170630 |