CN116184151B - IGBT switching characteristic test system and test method thereof - Google Patents
IGBT switching characteristic test system and test method thereof Download PDFInfo
- Publication number
- CN116184151B CN116184151B CN202310126523.XA CN202310126523A CN116184151B CN 116184151 B CN116184151 B CN 116184151B CN 202310126523 A CN202310126523 A CN 202310126523A CN 116184151 B CN116184151 B CN 116184151B
- Authority
- CN
- China
- Prior art keywords
- terminal
- power module
- tested
- igbt
- test
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000012360 testing method Methods 0.000 title claims abstract description 196
- 238000010998 test method Methods 0.000 title claims abstract description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 88
- 229910052802 copper Inorganic materials 0.000 claims abstract description 88
- 239000010949 copper Substances 0.000 claims abstract description 88
- 238000003825 pressing Methods 0.000 claims abstract description 78
- 238000006243 chemical reaction Methods 0.000 claims abstract description 66
- 239000003990 capacitor Substances 0.000 claims abstract description 63
- 238000000034 method Methods 0.000 abstract description 15
- 238000005520 cutting process Methods 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/04—Housings; Supporting members; Arrangements of terminals
- G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
- G01R1/0416—Connectors, terminals
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The invention relates to an IGBT switch characteristic test system and a test method thereof, which are characterized by comprising a supporting capacitor group, a capacitor terminal pair, a pressing terminal pair, a conversion device and a signal conversion interface; the positive electrode terminal and the negative electrode terminal of the supporting capacitor bank are respectively connected with corresponding capacitor terminals in the capacitor terminal pair through corresponding first connecting copper bars; each pressing terminal in the pressing terminal pair is connected with a corresponding capacitor terminal through a corresponding second connecting copper bar respectively, each pressing terminal in the pressing terminal pair is connected with a corresponding direct current terminal of the IGBT power module to be tested through a corresponding third connecting copper bar respectively, and each pressing terminal in the pressing terminal pair is also connected with a corresponding conversion terminal of the conversion device through a corresponding fourth connecting copper bar respectively; the alternating current terminal of the IGBT power module to be tested is connected with the middle terminal of the conversion device through the hollow inductor; the IGBT power module to be tested is also connected with the signal conversion interface, and the method can be widely applied to the field of IGBT switch characteristic test.
Description
Technical Field
The invention relates to the field of IGBT (insulated gate bipolar transistor) switch characteristic test, in particular to an IGBT switch characteristic test system and a test method thereof.
Background
The core part of the modern power electronic system is a power semiconductor device, wherein the insulated gate bipolar transistor IGBT combines the advantages of the field effect transistor MOSFET and the power transistor GTR, and is widely applied to the fields of high-power converter application such as electric traction, industrial driving, new energy power generation and the like. Although wide bandgap semiconductor devices such as SiC (silicon carbide) and GaN (gallium nitride) are rapidly developed, and existing products at medium and small power levels, IGBT power modules still take the dominant role in high-voltage and high-current situations due to the fact that some key technologies have not broken through and problems such as high manufacturing cost and expense are existed. In addition, the maturity of IGBT power module is higher, and current converter still uses IGBT as core power device in the market.
In order to test the switching characteristics of the IGBT power modules, various test devices have been proposed in the market, however, on the one hand, these test devices are bulky and heavy and cannot be carried along, i.e. no portability; on the other hand, in the use process of the test equipment, various problems exist, namely firstly, the wire connection and the wire replacement of the IGBT power module are complex, the test process is complex, and secondly, the compatibility of the IGBT power modules with different packaging shapes is poor.
Disclosure of Invention
In view of the above problems, an object of the present invention is to provide a system and a method for testing switching characteristics of an IGBT, which are portable and can simplify the testing process of the IGBT power module on the premise of satisfying the compatibility of various IGBT power modules.
In order to achieve the above purpose, the present invention adopts the following technical scheme: in one aspect, an IGBT switching characteristic test system is provided, including a supporting capacitor bank, a pair of capacitive terminals, a pair of push terminals, a conversion device, and a signal conversion interface;
the positive electrode terminal and the negative electrode terminal of the supporting capacitor bank are respectively connected with the corresponding capacitance terminals in the capacitance terminal pair through the corresponding first connecting copper bars, the supporting capacitor bank is used for providing the energy required during the test, and the capacitance terminal pair is used for leading out the positive electrode and the negative electrode of the supporting capacitor bank;
each pressing terminal in the pressing terminal pair is connected with the corresponding capacitor terminal through a corresponding second connecting copper bar, each pressing terminal in the pressing terminal pair is connected with a corresponding direct current terminal of an IGBT power module to be tested through a corresponding third connecting copper bar, and each pressing terminal in the pressing terminal pair is also connected with a corresponding conversion terminal of the conversion device through a corresponding fourth connecting copper bar;
the alternating current terminal of the IGBT power module to be tested is connected with the middle terminal of the conversion device through the hollow inductor, and the middle terminal of the conversion device is used for being connected with any conversion terminal of the conversion device; the IGBT power module to be tested is also connected with the signal conversion interface, and the signal conversion interface is used for outputting signals of the IGBT power module to be tested and receiving external control signals.
Further, the portable power box further comprises a box body, wherein the supporting capacitor bank, the capacitor terminal pair, the pressing terminal pair, the IGBT power module to be tested, the conversion device, the hollow inductor and the signal conversion interface are all arranged in the box body.
Further, the first connecting copper bar and the fourth connecting copper bar are fixed connecting copper bars; the second connecting copper bar and the third connecting copper bar are movable connecting copper bars, and the pressing terminal is used as a fixed point for rotation.
Further, two pairs of GE terminals are arranged on the IGBT power module to be tested, and each pair of GE terminals corresponds to the IGBT on one side of the IGBT power module to be tested.
In another aspect, a test method based on an IGBT switching characteristic test system is provided, including:
each second connecting copper bar rotates by taking the corresponding pressing terminal as a fixed point, so that the second connecting copper bar is disconnected with the corresponding capacitor terminal, each pressing terminal in the pair of pressing terminals is connected with the corresponding direct current terminal of the IGBT power module to be tested through the corresponding third connecting copper bar, and the withstand voltage test is conducted on the IGBTs on two sides of the IGBT power module to be tested;
and simultaneously rotating each second connection copper bar by taking the corresponding pressing terminal as a fixed point, connecting the second connection copper bar with the corresponding capacitor terminal, supporting the capacitor bank to provide the energy required during the test, and carrying out the switch test on the IGBTs at the two sides of the IGBT power module to be tested.
Further, the step of simultaneously rotating each second connection copper bar with the corresponding pressing terminal as a fixed point to disconnect the corresponding pressing terminal from the corresponding capacitor terminal, and simultaneously connecting each pressing terminal in the pair of pressing terminals with the corresponding direct current terminal of the IGBT power module to be tested through the corresponding third connection copper bar, the step of performing withstand voltage test on the IGBTs on two sides of the IGBT power module to be tested includes:
connecting an intermediate terminal of the switching device with a certain switching terminal;
rotating each second connecting copper bar by taking the corresponding pressing terminal as a fixed point at the same time, so that the second connecting copper bars are disconnected with the corresponding capacitor terminals;
connecting each pressing terminal in the pair of pressing terminals with a corresponding direct current terminal of the IGBT power module to be tested through a corresponding third connecting copper bar, wherein the third connecting copper bar is used as a collector electrode potential test point of the IGBT power module to be tested;
connecting an alternating current terminal of the IGBT power module to be tested with an outgoing line of the hollow inductor, wherein the connection point is used as an emitter potential test point of the IGBT power module to be tested;
obtaining withstand voltage test data of an IGBT power module to be tested;
taking the intermediate terminal and the emitter potential test point of the conversion device as potential test points at two ends of the hollow inductor, and judging whether the withstand voltage of one side IGBT of the IGBT power module to be tested is normal or not;
and connecting the middle terminal of the conversion device with the other conversion terminal, and performing withstand voltage test on the IGBT at the other side of the IGBT power module.
Further, the step of using the intermediate terminal and the emitter potential test point of the conversion device as potential test points at two ends of the air core inductor and judging whether the withstand voltage of the IGBT at one side of the IGBT power module to be tested is normal includes:
taking the intermediate terminal and the emitter potential test point of the conversion device as potential test points at two ends of the hollow inductor;
based on the potential test point, judging whether the leakage current of the IGBT at one side of the IGBT power module to be tested exceeds the standard according to the acquired withstand voltage test data;
judging whether the withstand voltage of the IGBT at one side of the IGBT power module to be tested is normal or not according to the leakage current judging result and a preset threshold value, and if so, completing the withstand voltage test of the IGBT at one side of the IGBT power module to be tested; otherwise, the withstand voltage test is ended.
Further, the step of simultaneously rotating each second connection copper bar with the corresponding pressing terminal as a fixed point to connect the corresponding pressing terminal with the corresponding capacitor terminal, and supporting the capacitor bank to provide energy required during testing, performing switch testing on the IGBTs on two sides of the IGBT power module to be tested, includes:
connecting an intermediate terminal of the switching device with a certain switching terminal;
rotating each second connecting copper bar by taking the corresponding pressing terminal as a fixed point at the same time so as to connect the second connecting copper bar with the corresponding capacitor terminal;
connecting each pressing terminal in the pair of pressing terminals with a corresponding direct current terminal of the IGBT power module to be tested through a corresponding third connecting copper bar at the same time to serve as a collector potential test point of the IGBT power module to be tested;
connecting an alternating current terminal of the IGBT power module to be tested with an outgoing line of the hollow inductor, wherein the connection point is used as an emitter potential test point of the IGBT power module to be tested;
acquiring switch test data of an IGBT power module to be tested;
taking a GE terminal of the IGBT power module to be tested as a test point, and judging whether the switch of the IGBT at one side of the IGBT power module to be tested is normal or not according to the acquired switch test data;
and connecting the middle terminal of the conversion device with the other conversion terminal, and performing switching test of the IGBT at the other side of the IGBT power module.
Further, the step of using the GE terminal of the IGBT power module to be tested as a test point and determining whether the switch of the IGBT on one side of the IGBT power module to be tested is normal according to the obtained switch test data includes:
taking a GE terminal of the IGBT power module to be tested as a test point;
judging whether the switch of the IGBT at one side of the IGBT power module to be tested is normal or not according to the acquired switch test data and a preset range based on the test point, and if so, finishing the switch test of the IGBT at one side of the IGBT power module to be tested; otherwise, the switch test is ended.
Further, when the same test is carried out on the IGBTs at the two sides of the IGBT power module to be tested, the IGBTs at the two sides are switched only by the connection of the conversion terminal, and the rotation of the connection copper bar is not involved; when different tests are performed, the second connection copper bar is required to be turned to control the switching-in and switching-out of the capacitor terminal.
Due to the adoption of the technical scheme, the invention has the following advantages:
1. the invention has the advantages that the supporting capacitor group can be cut out in the IGBT withstand voltage test due to the arrangement of the connecting copper bar, the capacitor terminal pair and the pressing terminal pair, the energy release in breakdown is reduced, the test safety is improved, the supporting capacitor group can be connected in the IGBT switching characteristic test, the energy required by the test is provided, the high safety is realized, in addition, the test system has high compatibility, the IGBT power module test of various package forms on the market can be satisfied, and the high applicability is realized.
2. The invention not only makes the wiring scheme very simple in the IGBT withstand voltage test and the IGBT switching characteristic test, but also makes the switching of the upper side IGBT and the lower side IGBT in the test flow and the wiring from the withstand voltage test flow to the switching characteristic test flow simple, and the designs greatly simplify the steps in the IGBT power module test, so that the test system meets the requirement of the market on the simplicity of the test equipment.
3. According to the invention, through the special design of the connection copper bar, the pressing terminal pair and the conversion device, the voltage peak generated in the test process is reduced by minimizing the parasitic impedance in the test loop of the IGBT power module, meanwhile, the design is convenient for cutting in and cutting out the support capacitor group when the test flow is converted, the test safety is improved, and the tested object is protected under the condition of obtaining a reliable test result.
4. The invention has the advantages that through the integrated optimization design, including the structural design of connecting the copper bar, the conversion device and the signal conversion interface, and the layout optimization of the supporting capacitor bank, the hollow inductor, the pressing terminal and the capacitor terminal, the installation of the IGBT power module and the connection with all the test system components are more convenient when different IGBT modules and different side IGBTs are tested, the portability of the IGBT power module test box is realized, the test process of the IGBT power module is simplified, and the test efficiency is improved.
5. The invention is based on special structural design, optimized layout and circuit connection scheme, and also realizes the compatibility of the test system to IGBT power modules with different packaging types, and expands the applicability of the test system.
In conclusion, the method and the device can be widely applied to the field of IGBT switching characteristic test.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Like parts are designated with like reference numerals throughout the drawings. In the drawings:
FIG. 1 is a schematic diagram of a testing system according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a test system according to an embodiment of the present invention;
FIG. 3 is a flow chart of a testing method according to an embodiment of the invention;
fig. 4 is an external schematic view of a test system applicable to an IGBT power module according to an embodiment of the invention.
Detailed Description
Exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present invention are shown in the drawings, it should be understood that the present invention may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
It is to be understood that the terminology used herein is for the purpose of describing particular example embodiments only, and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. The terms "comprises," "comprising," "includes," "including," and "having" are inclusive and therefore specify the presence of stated features, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, and/or groups thereof. The method steps, processes, and operations described herein are not to be construed as necessarily requiring their performance in the particular order described or illustrated, unless an order of performance is explicitly stated. It should also be appreciated that additional or alternative steps may be used.
Although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms may be only used to distinguish one element, component, region, layer or section from another region, layer or section. Terms such as "first," "second," and other numerical terms when used herein do not imply a sequence or order unless clearly indicated by the context. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the example embodiments.
For ease of description, spatially relative terms, such as "inner," "outer," "lower," "upper," and the like, may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. Such spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures.
According to the IGBT switching characteristic test system and the IGBT switching characteristic test method, through the design of the portable IGBT switching characteristic test system, the wiring scheme is extremely simple in the IGBT voltage withstand test and the IGBT switching characteristic test, and the switching of the upper side IGBT and the lower side IGBT and the switching of the voltage withstand test process to the switching characteristic test process are simple in the test process, so that a supporting capacitor bank can be cut out in the voltage withstand test, the energy release in breakdown is reduced, and the test safety is improved; the support capacitor group is connected during the switching characteristic test, so that the energy required by the test is provided, and the safety and the applicability are high.
Example 1
As shown in fig. 1 and 2, the present embodiment provides an IGBT switching characteristic testing system, which includes a box body 1, wherein a supporting capacitor bank 2, a capacitor terminal pair 3, a pressing terminal pair 4, a first connection copper bar 5, a second connection copper bar 6, a third connection copper bar 7, a fourth connection copper bar 8, an IGBT power module 9 to be tested, a conversion device 10, an air core inductor 11, and a signal conversion interface 12 are disposed in the box body 1.
The positive terminal and the negative terminal of the supporting capacitor bank 2 are respectively connected with the corresponding capacitor terminals in the capacitor terminal pair 3 through the corresponding first connecting copper bar 5, the supporting capacitor bank 2 is used for providing energy required during testing, and the capacitor terminal pair 3 is used for leading out the positive and negative electrodes of the supporting capacitor bank 2 so as to facilitate cutting in and cutting out of the supporting capacitor bank 2. Each pressing terminal in the pressing terminal pair 4 is connected with a corresponding capacitor terminal through a corresponding second connecting copper bar 6, each pressing terminal in the pressing terminal pair 4 is connected with a corresponding direct current terminal of the IGBT power module 9 to be tested through a corresponding third connecting copper bar 7, each pressing terminal in the pressing terminal pair 4 is also connected with a corresponding conversion terminal of the conversion device 10 through a corresponding fourth connecting copper bar 8, and the pressing terminal pair 4 is used for conveniently supporting the capacitor bank 2 to be cut in or cut out. The ac terminals of the IGBT power module 9 to be tested are connected to the intermediate terminals of the conversion device 10 via the air core inductor 11, which air core inductor 11 is used for testing the IGBT power module 9 to be tested, and the intermediate terminals of the conversion device 10 can be connected to any one of the conversion terminals of the conversion device 10. The IGBT power module 9 to be tested is also connected with a signal conversion interface 12, and the signal conversion interface 12 is used for outputting signals of the IGBT power module 9 to be tested to the outside in different interfaces without changing output signals; and receiving an external control signal to enable the IGBT power module 9 to be tested to be turned on or turned off based on the external control signal, so as to complete the corresponding test.
In a preferred embodiment, as shown in fig. 2, two pairs of GE terminals 13 are disposed on the IGBT power module 9 to be tested, where G is the gate of the IGBT power module and E is the emitter of the IGBT power module, and each pair of GE terminals 13 corresponds to an IGBT on one side of the IGBT power module 9 to be tested. Specifically, there are corresponding standards for the GE terminal locations of different packaged IGBT power modules.
In a preferred embodiment, the first connection copper bar 5 and the fourth connection copper bar 8 are fixed connection copper bars, the second connection copper bar 6 and the third connection copper bar 7 are movable connection copper bars, and the pressing terminal can be used as a fixed point for rotation.
In a preferred embodiment, the signal conversion interface 12 is set according to the packaging form and actual testing requirement of the various IGBT power modules 9 to be tested, and the signal conversion interface 12 can be a reserved various connection interfaces to meet the testing of different IGBT power modules 9 to be tested.
Example 2
As shown in fig. 3, the present embodiment provides a test method of an IGBT switching characteristic test system, capable of implementing a withstand voltage test and a switching test for an IGBT power module 9 to be tested as shown in fig. 4, including the steps of:
1) Each second connection copper bar 6 rotates by taking the corresponding pressing terminal as a fixed point, so that the corresponding pressing terminal is disconnected with the corresponding capacitor terminal, each pressing terminal in the pressing terminal pair 4 is connected with the corresponding direct current terminal of the IGBT power module 9 to be tested through the corresponding third connection copper bar 7, and the withstand voltage test is carried out on the IGBTs on two sides of the IGBT power module 9 to be tested, specifically:
1.1 A middle terminal of the conversion device 10 is connected to a certain conversion terminal.
1.2 Each second connection copper bar 6 is simultaneously rotated with the corresponding pressing terminal as a fixed point so as to be disconnected from the corresponding capacitance terminal, because the supporting capacitor bank 2 does not participate in the withstand voltage test.
1.3 Each pressing terminal in the pair of pressing terminals 4 is simultaneously connected with a corresponding direct current terminal of the IGBT power module 9 to be tested through a corresponding third connecting copper bar 7, and the third connecting copper bar 7 is used as a collector potential test point of the IGBT power module 9 to be tested.
Specifically, the test jig may be directly clamped on the third connection copper bar 7, considering that the direct current terminal, the pressing terminal, and the connection point are not suitable as test points due to the characteristics in physical construction.
1.4 An alternating current terminal of the IGBT power module 9 to be tested is connected to the outgoing line of the air core inductor 11, and the connection point is used as an emitter potential test point of the IGBT power module.
1.5 The withstand voltage test data of the IGBT power module 9 to be tested is acquired.
Specifically, the test data includes the current flowing through the IGBT power module 9 to be tested and the collector-emitter voltage of the IGBT.
1.6 Because the withstand voltage test needs to test the leakage current of the IGBT power module 9 to be tested, the intermediate terminal and the emitter potential test point of the conversion device 10 are used as potential test points at two ends of the air core inductor 11, whether the withstand voltage of the IGBT at one side of the IGBT power module 9 to be tested is normal or not is judged according to the obtained withstand voltage test data, if the withstand voltage is normal, the withstand voltage test of the IGBT at one side of the IGBT power module 9 to be tested is completed, and the step 1.7 is entered; otherwise, ending the withstand voltage test:
1.6.1 The intermediate terminals of the conversion means 10 and the emitter potential test points are used as potential test points across the air-core inductor 11.
1.6.2 Based on the potential test point, judging whether the leakage current of the IGBT at one side of the IGBT power module 9 to be tested exceeds the standard according to the acquired withstand voltage test data.
1.6.3 Judging whether the withstand voltage of the IGBT at one side of the IGBT power module 9 to be tested is normal or not according to the judging result of the leakage current and a preset threshold value, if so, finishing the withstand voltage test of the IGBT at one side of the IGBT power module 9 to be tested, and entering the step 1.7); otherwise, the withstand voltage test is ended.
Specifically, whether the withstand voltage of the IGBT is normal is determined by the leakage current, the threshold value thereof should be determined in combination with the technical manual corresponding to the IGBT power module 9 to be tested and the actual test result, and exceeding the threshold value may be determined as insufficient withstand voltage. In addition, the collector-emitter voltage is used for assisting judgment, and when the withstand voltage test is performed, if the withstand voltage of the IGBT is normal, the collector-emitter voltage is equal to the external voltage applied to the IGBT.
It should be noted that, whether the leakage current of the IGBT at one side of the IGBT power module exceeds the standard and whether the withstand voltage is normal is the technical content known to those skilled in the art, and the specific process is not repeated here.
1.7 The intermediate terminal of the switching device 10 is connected to the other switching terminal, and the step 1.6) is performed to perform the withstand voltage test of the IGBT on the other side of the IGBT power module.
1.8 If the withstand voltage tests of the IGBTs on the two sides of the IGBT power module are all normal, entering the step 2); otherwise, the withstand voltage test is ended.
2) Each second connection copper bar 6 rotates by taking the corresponding pressing terminal as a fixed point at the same time, so that the second connection copper bar is connected with the corresponding capacitor terminal, the support capacitor bank 2 provides the energy required during the test, the switching test is performed on the IGBTs on two sides of the IGBT power module 9 to be tested, and the switching test is specifically as follows:
2.1 A middle terminal of the conversion device 10 is connected to a certain conversion terminal.
2.2 Each second connection copper bar 6 is simultaneously rotated by taking the corresponding pressing terminal as a fixed point so as to be connected with the corresponding capacitance terminal, because the supporting capacitor bank 2 is needed to participate in the switch test.
Specifically, when the same test is performed on the IGBTs on both sides of the IGBT power module 9 to be tested, the IGBTs on both sides are switched only by the connection of the conversion terminals, and the rotation of the connection copper bars is not involved; when different tests are performed, for example, when the voltage withstand test is switched to the switch test, the second connection copper bar 6 needs to be turned to control the switching-in and switching-out of the capacitor terminal.
2.3 Each pressing terminal in the pair of pressing terminals 4 is simultaneously connected with a corresponding direct current terminal of the IGBT power module 9 to be tested through a corresponding third connecting copper bar 7 to serve as a collector potential test point of the IGBT power module 9 to be tested.
2.4 An alternating current terminal of the IGBT power module 9 to be tested is connected to the outgoing line of the air core inductor 11, and the connection point is used as an emitter potential test point of the IGBT power module 9 to be tested.
2.5 The switch test data of the IGBT power module 9 to be tested is acquired.
Specifically, the switching test data includes the inter-GE voltage (gate-emitter voltage) of the IGBT power module 9 to be tested, the collector-emitter voltage of the IGBT, and the current flowing through the IGBT power module 9 to be tested.
2.6 Because the switch test needs to test the gate voltage of the IGBT power module 9 to be tested, the GE terminal 13 of the IGBT power module 9 to be tested is used as a test point, whether the switch of the IGBT at one side of the IGBT power module 9 to be tested is normal is judged according to the obtained switch test data, if so, the switch test of the IGBT at one side of the IGBT power module 9 to be tested is completed, and the step 2.7 is entered; otherwise, the switch test is ended:
2.6.1 The GE terminal 13 of the IGBT power module 9 to be tested is used as a test point.
2.6.2 Based on the test point, judging whether the switch of the IGBT at one side of the IGBT power module 9 to be tested is normal or not according to the obtained switch test data and the preset range, if so, finishing the switch test of the IGBT at one side of the IGBT power module 9 to be tested, and entering the step 2.7); otherwise, the switch test is ended.
Specifically, the obtained voltage between GE, the collector-emitter voltage of the IGBT and the current flowing through the IGBT power module 9 to be tested are used to determine whether the switch of the IGBT on one side of the IGBT power module 9 to be tested is normal, the range should also be determined by combining the technical manual of the corresponding IGBT module and the actual test result, and the IGBT power module to be tested can be determined to be abnormal when exceeding the range.
It should be noted that, whether the switch of the IGBT at one side of the IGBT power module is normal is a technical content known to those skilled in the art, and a specific process is not described herein.
2.7 The intermediate terminal of the switching device 10 is connected with another switching terminal, and the switching test of the IGBT on the other side of the IGBT power module is performed in step 2.6).
The foregoing embodiments are only for illustrating the present invention, wherein the structures, connection modes, manufacturing processes, etc. of the components may be changed, and all equivalent changes and modifications performed on the basis of the technical solutions of the present invention should not be excluded from the protection scope of the present invention.
Claims (10)
1. The IGBT switching characteristic testing system is characterized by comprising a supporting capacitor bank, a capacitor terminal pair, a pressing terminal pair, a conversion device and a signal conversion interface;
the positive electrode terminal and the negative electrode terminal of the supporting capacitor bank are respectively connected with the corresponding capacitance terminals in the capacitance terminal pair through the corresponding first connecting copper bars, the supporting capacitor bank is used for providing the energy required during the test, and the capacitance terminal pair is used for leading out the positive electrode and the negative electrode of the supporting capacitor bank;
each pressing terminal in the pressing terminal pair is connected with the corresponding capacitor terminal through a corresponding second connecting copper bar, each pressing terminal in the pressing terminal pair is connected with a corresponding direct current terminal of an IGBT power module to be tested through a corresponding third connecting copper bar, and each pressing terminal in the pressing terminal pair is also connected with a corresponding conversion terminal of the conversion device through a corresponding fourth connecting copper bar;
the alternating current terminal of the IGBT power module to be tested is connected with the middle terminal of the conversion device through the hollow inductor, and the middle terminal of the conversion device is used for being connected with any conversion terminal of the conversion device; the IGBT power module to be tested is also connected with the signal conversion interface, and the signal conversion interface is used for outputting signals of the IGBT power module to be tested and receiving external control signals.
2. The IGBT switching characteristic test system of claim 1 further comprising a case, wherein the support capacitor bank, the pair of capacitive terminals, the pair of push terminals, the IGBT power module to be tested, the conversion device, the air core inductor, and the signal conversion interface are all disposed in the case.
3. The IGBT switching characteristic test system according to claim 1, wherein the first connection copper bar and the fourth connection copper bar are both fixed connection copper bars; the second connecting copper bar and the third connecting copper bar are movable connecting copper bars, and the pressing terminal is used as a fixed point for rotation.
4. The IGBT switching characteristic test system according to claim 1, wherein two pairs of GE terminals are provided on the IGBT power module to be tested, each pair of GE terminals corresponding to an IGBT on one side of the IGBT power module to be tested.
5. A test method based on the IGBT switching characteristic test system according to any one of claims 1 to 4, comprising:
each second connecting copper bar rotates by taking the corresponding pressing terminal as a fixed point, so that the second connecting copper bar is disconnected with the corresponding capacitor terminal, each pressing terminal in the pair of pressing terminals is connected with the corresponding direct current terminal of the IGBT power module to be tested through the corresponding third connecting copper bar, and the withstand voltage test is conducted on the IGBTs on two sides of the IGBT power module to be tested;
and simultaneously rotating each second connection copper bar by taking the corresponding pressing terminal as a fixed point, connecting the second connection copper bar with the corresponding capacitor terminal, supporting the capacitor bank to provide the energy required during the test, and carrying out the switch test on the IGBTs at the two sides of the IGBT power module to be tested.
6. The testing method of claim 5, wherein the rotating each second connection copper bar with the corresponding pressing terminal as a fixed point to disconnect the corresponding pressing terminal from the corresponding capacitor terminal, connecting each pressing terminal in the pair of pressing terminals with the corresponding dc terminal of the IGBT power module to be tested through the corresponding third connection copper bar, and performing the withstand voltage test on the IGBTs on both sides of the IGBT power module to be tested, includes:
connecting an intermediate terminal of the switching device with a certain switching terminal;
rotating each second connecting copper bar by taking the corresponding pressing terminal as a fixed point at the same time, so that the second connecting copper bars are disconnected with the corresponding capacitor terminals;
connecting each pressing terminal in the pair of pressing terminals with a corresponding direct current terminal of the IGBT power module to be tested through a corresponding third connecting copper bar, wherein the third connecting copper bar is used as a collector electrode potential test point of the IGBT power module to be tested;
connecting an alternating current terminal of the IGBT power module to be tested with an outgoing line of the hollow inductor, wherein the connection point is used as an emitter potential test point of the IGBT power module to be tested;
obtaining withstand voltage test data of an IGBT power module to be tested;
taking the intermediate terminal and the emitter potential test point of the conversion device as potential test points at two ends of the hollow inductor, and judging whether the withstand voltage of one side IGBT of the IGBT power module to be tested is normal or not;
and connecting the middle terminal of the conversion device with the other conversion terminal, and performing withstand voltage test on the IGBT at the other side of the IGBT power module.
7. The test method as set forth in claim 6, wherein the step of using the intermediate terminal and the emitter potential test point of the switching device as potential test points at both ends of the air core inductor and determining whether the withstand voltage of the IGBT at one side of the IGBT power module to be tested is normal comprises:
taking the intermediate terminal and the emitter potential test point of the conversion device as potential test points at two ends of the hollow inductor;
based on the potential test point, judging whether the leakage current of the IGBT at one side of the IGBT power module to be tested exceeds the standard according to the acquired withstand voltage test data;
judging whether the withstand voltage of the IGBT at one side of the IGBT power module to be tested is normal or not according to the leakage current judging result and a preset threshold value, and if so, completing the withstand voltage test of the IGBT at one side of the IGBT power module to be tested; otherwise, the withstand voltage test is ended.
8. The testing method of claim 5, wherein the step of simultaneously rotating each second connection copper bar with the corresponding pressing terminal as a fixed point to connect the second connection copper bar with the corresponding capacitor terminal, and supporting the capacitor bank to provide energy required for testing, and performing the switching test on the IGBTs on both sides of the IGBT power module to be tested comprises:
connecting an intermediate terminal of the switching device with a certain switching terminal;
rotating each second connecting copper bar by taking the corresponding pressing terminal as a fixed point at the same time so as to connect the second connecting copper bar with the corresponding capacitor terminal;
connecting each pressing terminal in the pair of pressing terminals with a corresponding direct current terminal of the IGBT power module to be tested through a corresponding third connecting copper bar at the same time to serve as a collector potential test point of the IGBT power module to be tested;
connecting an alternating current terminal of the IGBT power module to be tested with an outgoing line of the hollow inductor, wherein the connection point is used as an emitter potential test point of the IGBT power module to be tested;
acquiring switch test data of an IGBT power module to be tested;
taking a GE terminal of the IGBT power module to be tested as a test point, and judging whether the switch of the IGBT at one side of the IGBT power module to be tested is normal or not according to the acquired switch test data;
and connecting the middle terminal of the conversion device with the other conversion terminal, and performing switching test of the IGBT at the other side of the IGBT power module.
9. The testing method of claim 8, wherein the step of using the GE terminal of the IGBT power module to be tested as the test point and determining whether the switching of the IGBT on the one side of the IGBT power module to be tested is normal according to the obtained switching test data comprises:
taking a GE terminal of the IGBT power module to be tested as a test point;
judging whether the switch of the IGBT at one side of the IGBT power module to be tested is normal or not according to the acquired switch test data and a preset range based on the test point, and if so, finishing the switch test of the IGBT at one side of the IGBT power module to be tested; otherwise, the switch test is ended.
10. The test method of claim 8, wherein when the same test is performed on the IGBTs on both sides of the IGBT power module to be tested, switching the IGBTs on both sides is performed only by connection of the switching terminals, and does not involve rotation of the connection copper bars; when different tests are performed, the second connection copper bar is required to be turned to control the switching-in and switching-out of the capacitor terminal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310126523.XA CN116184151B (en) | 2023-02-16 | 2023-02-16 | IGBT switching characteristic test system and test method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310126523.XA CN116184151B (en) | 2023-02-16 | 2023-02-16 | IGBT switching characteristic test system and test method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116184151A CN116184151A (en) | 2023-05-30 |
| CN116184151B true CN116184151B (en) | 2024-01-02 |
Family
ID=86443966
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310126523.XA Active CN116184151B (en) | 2023-02-16 | 2023-02-16 | IGBT switching characteristic test system and test method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116184151B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106291310A (en) * | 2016-10-12 | 2017-01-04 | 天津大学 | A kind of method of testing utilizing double-pulsed technology test IGBT dynamic switching characteristic and device |
| CN207408507U (en) * | 2017-10-26 | 2018-05-25 | 北京天诚同创电气有限公司 | power module test system |
| CN111551836A (en) * | 2020-03-30 | 2020-08-18 | 国网福建省电力有限公司电力科学研究院 | IGBT test system with grid leakage current test circuit |
| CN112540279A (en) * | 2020-12-04 | 2021-03-23 | 荣信汇科电气股份有限公司 | Crimping formula IGBT module current conversion testing arrangement |
| CN215493702U (en) * | 2021-06-24 | 2022-01-11 | 中国三峡建工(集团)有限公司 | Adjustable stray inductance copper bar for crimping type IGBT test |
| CN114355143A (en) * | 2022-01-05 | 2022-04-15 | 中节能风力发电股份有限公司 | Energy discharge and inhibition device and method for IGBT characteristic test equipment |
-
2023
- 2023-02-16 CN CN202310126523.XA patent/CN116184151B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106291310A (en) * | 2016-10-12 | 2017-01-04 | 天津大学 | A kind of method of testing utilizing double-pulsed technology test IGBT dynamic switching characteristic and device |
| CN207408507U (en) * | 2017-10-26 | 2018-05-25 | 北京天诚同创电气有限公司 | power module test system |
| CN111551836A (en) * | 2020-03-30 | 2020-08-18 | 国网福建省电力有限公司电力科学研究院 | IGBT test system with grid leakage current test circuit |
| CN112540279A (en) * | 2020-12-04 | 2021-03-23 | 荣信汇科电气股份有限公司 | Crimping formula IGBT module current conversion testing arrangement |
| CN215493702U (en) * | 2021-06-24 | 2022-01-11 | 中国三峡建工(集团)有限公司 | Adjustable stray inductance copper bar for crimping type IGBT test |
| CN114355143A (en) * | 2022-01-05 | 2022-04-15 | 中节能风力发电股份有限公司 | Energy discharge and inhibition device and method for IGBT characteristic test equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN116184151A (en) | 2023-05-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8791662B2 (en) | Power semiconductor module, electric-power conversion apparatus, and railway vehicle | |
| Marzoughi et al. | Characterization and evaluation of the state-of-the-art 3.3-kV 400-A SiC MOSFETs | |
| KR101089026B1 (en) | Power semiconductor module with reduced parasitic inductance | |
| CN107148737A (en) | Power conversion device and power semiconductor module | |
| CN102347685A (en) | Three level power converting device | |
| Onar et al. | A SiC MOSFET based inverter for wireless power transfer applications | |
| Raheja et al. | Applications and characterization of four quadrant GaN switch | |
| Lai et al. | Development of a 10 kW high power density three-phase ac-dc-ac converter using SiC devices | |
| CN110401335A (en) | Driving circuit, power module and power conversion system | |
| Huang et al. | Design and testing of a modular multilevel converter submodule based on 10 kV SiC MOSFETs | |
| Liu et al. | A novel double-sided cooling inverter leg for high power density EV based on customized SiC power module | |
| CN206498321U (en) | Gate protection circuit and power electronic equipment | |
| CN116184151B (en) | IGBT switching characteristic test system and test method thereof | |
| US20190190390A1 (en) | Power electronic module for a charging station and corresponding charging station and electricity charging station | |
| JPWO2017158867A1 (en) | Power converter | |
| Ismail et al. | Characterization and System Benefits of Using 3.3 kV All-SiC MOSFET Modules in MV Power Converter Applications | |
| CN113281606A (en) | Flexible DC power module test system and method | |
| CN109950940B (en) | Valve block charging device and valve block charging control method | |
| JP6794841B2 (en) | Power converter and its manufacturing method | |
| Jaksic et al. | Novel SiC power module for traction power inverters with low parasitic inductances | |
| CN109560066A (en) | A kind of power module with gap bridge conductive layer | |
| Marzoughi et al. | Static and Dynamic Performance Characterization of 3.3-kV 30-A Discrete SiC MOSFETs | |
| CN115201649B (en) | Driving circuit for realizing IGBT state monitoring by spontaneous short-circuit current | |
| CN218102981U (en) | Conversion circuit | |
| CN213023260U (en) | High-voltage pulse power supply and transient common mode interference test circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |