CN115201649B - Driving circuit for realizing IGBT state monitoring by spontaneous short-circuit current - Google Patents
Driving circuit for realizing IGBT state monitoring by spontaneous short-circuit current Download PDFInfo
- Publication number
- CN115201649B CN115201649B CN202210597258.9A CN202210597258A CN115201649B CN 115201649 B CN115201649 B CN 115201649B CN 202210597258 A CN202210597258 A CN 202210597258A CN 115201649 B CN115201649 B CN 115201649B
- Authority
- CN
- China
- Prior art keywords
- igbt
- circuit
- short
- unit
- signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000012544 monitoring process Methods 0.000 title claims abstract description 78
- 230000002269 spontaneous effect Effects 0.000 title claims abstract description 47
- 238000001514 detection method Methods 0.000 claims abstract description 23
- 238000012545 processing Methods 0.000 claims abstract description 22
- 230000032683 aging Effects 0.000 claims abstract description 12
- 238000002955 isolation Methods 0.000 claims abstract description 12
- 239000003990 capacitor Substances 0.000 claims description 6
- 238000005070 sampling Methods 0.000 claims description 6
- 230000001960 triggered effect Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000036541 health Effects 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2608—Circuits therefor for testing bipolar transistors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2608—Circuits therefor for testing bipolar transistors
- G01R31/2619—Circuits therefor for testing bipolar transistors for measuring thermal properties thereof
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
Abstract
The invention relates to a driving circuit for realizing IGBT state monitoring by spontaneous short-circuit current, which comprises a high-voltage isolation multipath output power supply, an undervoltage detection unit, a short-circuit detection unit, a driving signal power processing unit, a logic control unit, a signal acquisition unit, a junction temperature monitoring unit and an IGBT spontaneous short-circuit unit. The IGBT state monitoring function is integrated on the driving circuit, and the structure of a junction temperature monitoring unit, a signal acquisition unit and an IGBT spontaneous short-circuit unit is adopted, so that the IGBT forms a short-circuit loop through the driving circuit, short-circuit current is generated, and the aging state of the IGBT can be monitored by detecting the junction temperature and the short-circuit current. The on-line monitoring of the IGBT characteristic parameters and the working conditions is realized under the condition that the hardware structure of the power electronic device system is not changed and the IGBT is not required to be disassembled. The monitoring process does not need manual operation, a special control system is not needed to be added, and the running state of the original control system is not needed to be modified.
Description
Technical Field
The invention relates to the technical field of IGBT driving circuits and fault monitoring, in particular to a driving circuit for realizing IGBT state monitoring by spontaneous short-circuit current.
Background
With the great development of new energy science and technology in China, the industrial markets of wind power generation, smart grids, new energy automobiles and the like are continuously growing. The IGBT (insulated gate bipolar transistor) has become a core device of a new energy converter system due to its excellent turn-on and turn-off performance, but is subjected to various severe conditions such as high temperature, high voltage, overcurrent, etc. during the operation process, the IGBT is very easy to be damaged. According to research, the longer the service time of the IGBT is, the larger the failure rate is, and the main failure mode is bonding wire breakage. When the number of broken bonding wires reaches a certain value, the IGBT can be aged and disabled, and the safety of the whole system is endangered. Therefore, the IGBT is subjected to state monitoring, and is replaced before aging failure occurs, so that the method has great significance on the economy and safety of the whole system.
The bonding wire plays an important role in the IGBT module, and can realize the electrical connection between the top of the IGBT chip and the output terminal. When the bonding wires of the IGBT are broken, the internal distribution parameters such as resistance, inductance and the like can be changed, so that the external electric quantity of the IGBT is changed. The state of the IGBT can be monitored by monitoring the change of the corresponding electric quantity, so that whether the IGBT has aging failure or not is judged.
The IGBT driving circuit is closely related to the IGBT, and is an important guarantee for controlling the normal work of the IGBT. The state of the IGBT is monitored through the IGBT driving circuit, the change of the electric quantity of the IGBT can be rapidly and accurately identified and judged, the IGBT is not required to be disassembled, and the function of on-line monitoring can be realized.
Prior art one, its application number: cn201610223894.X, publication number: CN105911446a discloses a method and a device for monitoring the aging state of an IGBT, the method is as follows: the IGBT driving circuit with continuously variable gate voltage and the direct current power supply are utilized, and the monitoring process and the data acquisition and processing are completed by an upper computer. In the turn-off process of the IGBT, the gate voltage is slowly reduced to be lower than the threshold voltage, the continuously-changed gate voltage and collector current are obtained through the data acquisition card, the transmission characteristic curve of the IGBT is finally obtained, and the aging state of the IGBT can be monitored according to the change of the transmission characteristic.
This technical scheme can't realize the on-line monitoring to IGBT, need dismantle the IGBT, and the process of dismantling is more easily led to the fact the damage of IGBT, influences measuring result. In the technical scheme, the data acquisition and processing all need the participation of an upper computer, so that the volume of a monitoring system is increased, and the operation complexity is increased.
Second prior art, its application number: CN201610537013.1, publication number: CN106249069a discloses an on-line monitoring method for IGBT modules, which comprises the following steps: a bridge type measuring circuit is formed by a test IGBT and an IGBT to be tested, different control signals are sent to the two IGBTs by a controller, so that the IGBT to be tested is in a short-circuit working condition, and the aging state of the IGBT is monitored according to the magnitude of short-circuit current.
In the technical scheme, at least two IGBTs are needed for monitoring the states of the IGBTs, so that the cost of a monitoring system is increased; in addition, short-circuit energy in the technical scheme is provided by the current transformation system, impact is caused to the current transformation system in the short-circuit process, and the service life of the whole system is reduced.
Disclosure of Invention
Aiming at the defects existing in the prior art, the invention aims to provide a driving circuit for realizing IGBT state monitoring by spontaneous short-circuit current, and on-line monitoring of IGBT characteristic parameters and working conditions is realized under the condition that the hardware structure of a power electronic device system is not changed and the IGBT is not required to be disassembled. The monitoring process does not need manual operation, a special control system is not needed to be added, the running state of the original control system is not needed to be modified, the driving circuit integrating the state monitoring function automatically judges the health state of the IGBT, and the cost of state monitoring and the complexity of operation are reduced.
In order to achieve the above purpose, the invention adopts the following technical scheme:
A driving circuit for realizing IGBT state monitoring by spontaneous short-circuit current comprises a high-voltage isolation multipath output power supply, an undervoltage detection unit, a short-circuit detection unit, a driving signal power processing unit, a logic control unit, a signal acquisition unit, a junction temperature monitoring unit and an IGBT spontaneous short-circuit unit.
The high-voltage isolation multi-output power supply is used for providing different levels of power supply for each functional unit of the drive board.
The undervoltage detection unit is used for power-down protection of the high-voltage isolation multi-output power supply, and sending an undervoltage detection signal to the logic control unit, if the high-voltage isolation multi-output power supply is undervoltage, the undervoltage protection function is triggered, and the logic control unit can send an IGBT turn-off signal.
The drive signal power processing unit is connected to the gate terminal of the IGBT and is used for receiving signals from the logic control unit, and the gate voltage of the IGBT is adjusted by switching different MOS tubes, so that the on and off of the IGBT are controlled.
The logic control unit is a data processing core of the whole driving circuit and is used for carrying out various logic processing operations on the received signals and controlling the working time and the working mode of different units.
The short circuit detection unit is connected to the power collector terminal and the auxiliary emitter terminal of the IGBT and is used for monitoring the short circuit working condition of the IGBT in a common driving mode, and when the IGBT has a short circuit fault, the short circuit detection unit can send a short circuit fault signal to the logic control unit, and the logic control unit sends an IGBT turn-off signal.
The signal acquisition unit is connected to the power collector terminal and the auxiliary emitter terminal of the IGBT, and is used for acquiring voltage signals between the collector and the emitter of the IGBT and sending the acquired voltage signals to the logic control unit. If the driving circuit enters a state monitoring mode, the signal acquisition unit can also acquire a short-circuit current signal of the IGBT spontaneous short-circuit unit and send the short-circuit current signal to the logic control unit.
The junction temperature monitoring unit is connected to the power collector terminal and the auxiliary emitter terminal of the IGBT and is used for identifying the junction temperature of the IGBT and generating a junction temperature judging signal. The junction temperature monitoring unit sends a junction temperature judging signal to the logic control unit, and the logic control unit judges and controls whether the IGBT spontaneous short-circuit unit works or not.
The IGBT spontaneous short-circuiting unit is connected to the power collector terminal, the auxiliary emitter terminal and the gate terminal of the IGBT, receives signals from the logic control unit, and can realize spontaneous short-circuiting of the IGBT.
The logic control unit judges according to the voltage signal and the control signal between the collector and the emitter acquired by the signal acquisition unit, and determines the working mode of the driving circuit. If the driving circuit is in a common driving mode, the driving circuit normally switches the IGBT module according to the control signal. If the driving circuit is in the state monitoring mode, the junction temperature monitoring unit is enabled first. Under the condition that the junction temperature meets the requirement, an IGBT spontaneous short-circuit unit is enabled, the IGBT forms a short-circuit loop through a driving plate to generate short-circuit current, a signal acquisition unit acquires a short-circuit current signal from the IGBT spontaneous short-circuit unit, the acquired short-circuit current signal is sent to a logic control unit, and the logic control unit correspondingly judges the aging state of the IGBT according to the acquired short-circuit current signal.
The IGBT spontaneous short-circuiting unit comprises a constant voltage source, a plurality of capacitors, a switch S1 and a MOS tube M3. The constant voltage source is connected with the plurality of capacitors in parallel and provides short-circuit current for the IGBT together; the MOS transistor M3 is connected to the gate terminal of the IGBT. The IGBT spontaneous short-circuiting unit controls the spontaneous short-circuiting of the IGBT by controlling the switch S1, and when the switch S1 is closed, the IGBT forms a short-circuiting loop through the driving plate to generate short-circuiting current. Before the IGBT spontaneously shorts, the MOS tube M3 is turned on, and the gate voltage of the IGBT is adjusted to be a set value V CC2 which is slightly larger than the gate threshold voltage of the IGBT.
The driving signal power processing unit consists of two MOS tubes and two gate resistors.
The logic control unit is composed of a logic control chip and an external signal processing circuit.
The short circuit detection unit is composed of a voltage sampling circuit, a comparator circuit and a short circuit threshold setting circuit.
The signal acquisition unit is composed of a plurality of differential operational amplifier circuits, a plurality of comparator circuits and a plurality of threshold setting circuits.
The junction temperature monitoring unit is composed of a constant current source circuit and an emitter voltage sampling circuit.
The invention has the beneficial effects that:
(1) The IGBT state monitoring circuit is integrated on the driving circuit, and on-line monitoring of the characteristic parameters and the working conditions of the IGBT is realized under the condition that the hardware structure of the power electronic device system is not changed and the IGBT is not required to be disassembled.
(2) The monitoring process does not need manual operation, a special control system is not needed to be added, the running state of the original control system is not needed to be modified, the driving circuit integrating the state monitoring function automatically judges the health state of the IGBT, and the cost of state monitoring and the complexity of operation can be reduced.
(3) The working modes of the driving circuit are divided, and the on-line monitoring function of the IGBT is realized while the normal driving function of the IGBT is not influenced by setting corresponding judging conditions.
(4) The on-line monitoring of the IGBT is realized by simultaneously monitoring the short-circuit current and the junction temperature, so that the accuracy of monitoring data is ensured; meanwhile, the data acquisition and the data processing are completed by the driving circuit, so that the possibility of errors in the data transmission process is reduced, and the reliability of the detection result is improved.
Drawings
The invention has the following drawings:
Fig. 1 is a schematic diagram of the electrical connection between the driving circuit and the IGBT according to the present invention.
Fig. 2 is a schematic diagram of a driving circuit for realizing IGBT status monitoring by spontaneous short-circuit current according to the present invention.
Fig. 3 shows the IGBT short-circuit current curves at different gate voltages of the invention.
Detailed Description
The invention is described in further detail below with reference to fig. 1-3.
The invention provides a driving circuit for realizing IGBT state monitoring by spontaneous short-circuit current, and the electric connection of the driving circuit and an IGBT is shown in figure 1. The drive circuit needs to be connected to the power collector terminal, gate terminal and auxiliary emitter terminal of the IGBT for achieving the designed function. The driving circuit may receive a control signal from the controller and may also output a feedback signal to the controller.
The circuit structure diagram of the driving circuit for realizing IGBT state monitoring by spontaneous short-circuit current is shown in figure 2. The driving circuit has the traditional functions of undervoltage detection, short circuit detection, logic processing, power amplification and the like, and additionally has the function of state monitoring. The state monitoring function adopts a structure of a junction temperature monitoring unit, a signal acquisition unit and an IGBT spontaneous short-circuit unit, and the IGBT can form a short-circuit loop through a driving circuit to generate short-circuit current. Under the condition that the IGBT junction temperature meets the requirement, the drive board can monitor ageing failure caused by the break of the IGBT bonding wire on line by monitoring the short-circuit current of the IGBT. Taking FF450R12ME4 of inflorescence as an example, IGBT short-circuit current curves (transfer characteristic curves) of different gate voltages in a healthy state are given in a data manual, and as shown in fig. 3, when the short-circuit current at the same temperature and gate voltage is smaller than the value on the curve, the IGBT is judged to have aging failure based on the curve.
The driving circuit for realizing IGBT state monitoring by spontaneous short-circuit current has two working modes: a normal drive mode and a state monitoring mode. The common driving mode is a preferred working mode of the driving circuit, and the IGBT can be normally driven and protected without any setting; the state monitoring mode determines when to start according to the external signals collected by the driving circuit, when the collected signals meet the judging conditions, the driving circuit enters the state monitoring mode, short-circuit current is spontaneously generated, the size of the short-circuit current is detected, and finally the driving circuit judges the aging state of the IGBT. The state monitoring function is a special function newly added on the basis of the common driving function, and the driving circuit only enters a state monitoring mode when the IGBT does not work. Taking the converter IGBT as an example, the driving circuit enters a state monitoring mode only when the converter does not work and the main power loop is powered down. The basis for judging the state monitoring mode of the driving circuit is as follows: the control signal input by the driving circuit is a turn-off signal, and the collected IGBT collector-emitter voltage is smaller than a set value. Otherwise, the driving circuit operates in the normal driving mode.
The driving circuit for realizing IGBT state monitoring by spontaneous short-circuit current has the following circuit structure and working principle:
The high-voltage isolation multipath output power supply is used for providing different levels of power supply for each functional unit of the driving board.
The undervoltage detection unit is used for carrying out power-down protection on the high-voltage isolation multi-output power supply, sending an undervoltage detection signal to the logic control unit, triggering an undervoltage protection function if the high-voltage isolation multi-output power supply is undervoltage, and sending an IGBT (insulated gate bipolar transistor) turn-off signal by the logic control unit.
And the driving signal power processing unit is composed of two MOS tubes and two gate resistors and is connected to the gate terminal of the IGBT. The drive signal power processing unit is used for receiving signals from the logic control unit, and the gate voltage of the IGBT is adjusted by switching different MOS tubes, so that the on and off of the IGBT are controlled.
The logic control unit is a data processing core of the whole driving circuit, is used for carrying out various logic processing operations on the received signals and controlling the working time and the working mode of different units, and mainly comprises a logic control chip and an external signal processing circuit.
The short circuit detection unit is mainly composed of a voltage sampling circuit, a comparator circuit and a short circuit threshold setting circuit and is used for monitoring the short circuit condition of the IGBT in a common driving mode and is connected to a power collector terminal and an auxiliary emitter terminal of the IGBT. When the IGBT has short circuit fault, the short circuit detection unit sends a short circuit fault signal to the logic control unit, and the logic control unit sends an IGBT turn-off signal to protect the IGBT.
The signal acquisition unit is composed of a plurality of differential operational amplifier circuits, a plurality of comparator circuits and a plurality of threshold setting circuits, is connected to a power collector terminal and an auxiliary emitter terminal of the IGBT, can acquire voltage signals between the collector and the emitter of the IGBT, and sends the acquired voltage signals to the logic control unit.
The logic control unit judges according to the voltage signal and the control signal acquired by the signal acquisition unit, and determines the working mode of the driving circuit. If the driving circuit is in a common driving mode, the driving circuit normally switches the IGBT module according to the control signal. If the driving circuit is in a state monitoring mode, enabling the junction temperature monitoring unit first; under the condition that the junction temperature meets the requirement, an IGBT spontaneous short-circuit unit is enabled, the IGBT forms a short-circuit loop through a driving plate to generate short-circuit current, a signal acquisition unit acquires a short-circuit current signal from the IGBT spontaneous short-circuit unit, the acquired short-circuit current signal is sent to a logic control unit, and the logic control unit correspondingly judges the aging state of the IGBT according to the acquired short-circuit current signal.
And the junction temperature monitoring unit is composed of a constant current source circuit and an emitter voltage sampling circuit, is connected to the power collector terminal and the auxiliary emitter terminal of the IGBT, and is used for identifying the junction temperature of the IGBT and generating a junction temperature judging signal. The junction temperature monitoring unit sends a junction temperature judging signal to the logic control unit, and the logic control unit judges and controls whether the IGBT spontaneous short-circuit unit works or not.
And an IGBT spontaneous short-circuiting unit connected to the power collector terminal, the auxiliary emitter terminal and the gate terminal of the IGBT and receiving signals from the logic control unit.
The IGBT spontaneous short-circuiting unit comprises a constant voltage source, a plurality of capacitors, a switch S1 and a MOS tube M3. The constant voltage source is connected with the plurality of capacitors in parallel and provides short-circuit current for the IGBT together; the MOS transistor M3 is connected to the gate terminal of the IGBT. The IGBT spontaneous short-circuiting unit controls the spontaneous short-circuiting of the IGBT by controlling the switch S1, and when the switch S1 is closed, the IGBT forms a short-circuiting loop through the driving plate to generate short-circuiting current. Before the IGBT spontaneously shorts out, the MOS tube M3 is turned on, the gate voltage of the IGBT is adjusted to be a set value V CC2 which is slightly larger than the gate threshold voltage of the IGBT, and the purpose of setting V CC2 is to reduce the short-circuit current and ensure the safety of the IGBT.
The above embodiments are only for illustrating the present invention, not for limiting the present invention, and various changes and modifications may be made by one skilled in the relevant art without departing from the spirit and scope of the present invention, and thus all equivalent technical solutions are also within the scope of the present invention.
What is not described in detail in this specification is prior art known to those skilled in the art.
Claims (6)
1. The driving circuit for realizing IGBT state monitoring by spontaneous short-circuit current is characterized by comprising: the device comprises a high-voltage isolation multipath output power supply, an undervoltage detection unit, a short circuit detection unit, a driving signal power processing unit, a logic control unit, a signal acquisition unit, a junction temperature monitoring unit and an IGBT spontaneous short circuit unit;
The high-voltage isolation multipath output power supply is used for providing different levels of power supply for each functional unit of the driving board;
The undervoltage detection unit is used for power-down protection of the high-voltage isolation multi-output power supply, and sending an undervoltage detection signal to the logic control unit, if the high-voltage isolation multi-output power supply is undervoltage, the undervoltage protection function is triggered, and the logic control unit can send an IGBT turn-off signal;
The drive signal power processing unit is connected to the gate terminal of the IGBT and is used for receiving signals from the logic control unit, and the gate voltage of the IGBT is adjusted by switching different MOS tubes, so that the on and off of the IGBT are controlled;
the logic control unit is a data processing core of the whole driving circuit and is used for carrying out logic processing operation on the received signals and controlling the working time and the working mode of different units;
the short circuit detection unit is connected to the power collector terminal and the auxiliary emitter terminal of the IGBT and is used for monitoring the short circuit working condition of the IGBT in a common driving mode, and when the IGBT has a short circuit fault, the short circuit detection unit sends a short circuit fault signal to the logic control unit, and the logic control unit sends an IGBT turn-off signal;
the signal acquisition unit is connected to the power collector terminal and the auxiliary emitter terminal of the IGBT, and is used for acquiring voltage signals between the collector and the emitter of the IGBT and sending the acquired voltage signals to the logic control unit; if the driving circuit enters a state monitoring mode, the signal acquisition unit can also acquire a short-circuit current signal of the IGBT spontaneous short-circuit unit and send the short-circuit current signal to the logic control unit;
The junction temperature monitoring unit is connected to the power collector terminal and the auxiliary emitter terminal of the IGBT and is used for identifying the junction temperature of the IGBT and generating a junction temperature judging signal; the junction temperature monitoring unit sends a junction temperature judging signal to the logic control unit, and the logic control unit judges and controls whether the IGBT spontaneous short-circuit unit works or not;
The IGBT spontaneous short-circuiting unit is connected to the power collector terminal, the auxiliary emitter terminal and the gate terminal of the IGBT, receives signals from the logic control unit, and can realize spontaneous short-circuiting of the IGBT;
The logic control unit judges according to the voltage signal and the control signal between the collector and the emitter acquired by the signal acquisition unit, and determines the working mode of the driving circuit; if the driving circuit is in a common driving mode, the driving circuit normally switches the IGBT module according to the control signal; if the driving circuit is in a state monitoring mode, enabling the junction temperature monitoring unit first; under the condition that the junction temperature meets the requirement, enabling an IGBT spontaneous short-circuit unit, forming a short-circuit loop by the IGBT through a driving plate, generating short-circuit current, collecting short-circuit current signals from the IGBT spontaneous short-circuit unit by a signal collecting unit, sending the collected short-circuit current signals to a logic control unit, and correspondingly judging the aging state of the IGBT by the logic control unit according to the collected short-circuit current signals;
The IGBT spontaneous short-circuit unit comprises a constant voltage source, a plurality of capacitors, a switch S1 and a MOS tube M3; the constant voltage source is connected with the plurality of capacitors in parallel and provides short-circuit current for the IGBT together; the MOS tube M3 is connected to a gate terminal of the IGBT; the IGBT spontaneous short-circuiting unit controls the spontaneous short-circuiting of the IGBT by controlling the switch S1, and when the switch S1 is closed, the IGBT forms a short-circuiting loop through the driving plate to generate short-circuiting current; before the IGBT spontaneously shorts, the MOS tube M3 is turned on, and the gate voltage of the IGBT is adjusted to be a set value V CC2 which is slightly larger than the gate threshold voltage of the IGBT.
2. The drive circuit for realizing IGBT state monitoring by spontaneous short-circuit current according to claim 1, wherein: the driving signal power processing unit consists of two MOS tubes and two gate resistors.
3. The drive circuit for realizing IGBT state monitoring by spontaneous short-circuit current according to claim 1, wherein: the logic control unit is composed of a logic control chip and an external signal processing circuit.
4. The drive circuit for realizing IGBT state monitoring by spontaneous short-circuit current according to claim 1, wherein: the short circuit detection unit is composed of a voltage sampling circuit, a comparator circuit and a short circuit threshold setting circuit.
5. The drive circuit for realizing IGBT state monitoring by spontaneous short-circuit current according to claim 1, wherein: the signal acquisition unit is composed of a plurality of differential operational amplifier circuits, a plurality of comparator circuits and a plurality of threshold setting circuits.
6. The drive circuit for realizing IGBT state monitoring by spontaneous short-circuit current according to claim 1, wherein: the junction temperature monitoring unit is composed of a constant current source circuit and an emitter voltage sampling circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210597258.9A CN115201649B (en) | 2022-05-30 | 2022-05-30 | Driving circuit for realizing IGBT state monitoring by spontaneous short-circuit current |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210597258.9A CN115201649B (en) | 2022-05-30 | 2022-05-30 | Driving circuit for realizing IGBT state monitoring by spontaneous short-circuit current |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115201649A CN115201649A (en) | 2022-10-18 |
| CN115201649B true CN115201649B (en) | 2024-05-14 |
Family
ID=83577181
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210597258.9A Active CN115201649B (en) | 2022-05-30 | 2022-05-30 | Driving circuit for realizing IGBT state monitoring by spontaneous short-circuit current |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115201649B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011147055A1 (en) * | 2010-05-25 | 2011-12-01 | 中国电力科学研究院 | Control and monitoring system of igbt high voltage series valves |
| JP2014127728A (en) * | 2012-12-25 | 2014-07-07 | Nissan Motor Co Ltd | Short circuit fault protection device and short circuit fault protection method |
| CN204013200U (en) * | 2014-09-03 | 2014-12-10 | 湘潭电机股份有限公司 | One is applicable to three-level current transformer IGBT drive circuit |
| CN108539994A (en) * | 2017-03-06 | 2018-09-14 | 阮树成 | Electric power high power factor correction SPWM three phase rectifier heat treatment equipments |
| CN111371293A (en) * | 2020-03-10 | 2020-07-03 | 北京交通大学 | IGBT drive circuit with state monitoring and fault recording functions |
| CN111830389A (en) * | 2020-07-31 | 2020-10-27 | 徐州中矿大传动与自动化有限公司 | IGBT junction temperature estimation system and method based on emitter power terminal temperature |
-
2022
- 2022-05-30 CN CN202210597258.9A patent/CN115201649B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011147055A1 (en) * | 2010-05-25 | 2011-12-01 | 中国电力科学研究院 | Control and monitoring system of igbt high voltage series valves |
| JP2014127728A (en) * | 2012-12-25 | 2014-07-07 | Nissan Motor Co Ltd | Short circuit fault protection device and short circuit fault protection method |
| CN204013200U (en) * | 2014-09-03 | 2014-12-10 | 湘潭电机股份有限公司 | One is applicable to three-level current transformer IGBT drive circuit |
| CN108539994A (en) * | 2017-03-06 | 2018-09-14 | 阮树成 | Electric power high power factor correction SPWM three phase rectifier heat treatment equipments |
| CN111371293A (en) * | 2020-03-10 | 2020-07-03 | 北京交通大学 | IGBT drive circuit with state monitoring and fault recording functions |
| CN111830389A (en) * | 2020-07-31 | 2020-10-27 | 徐州中矿大传动与自动化有限公司 | IGBT junction temperature estimation system and method based on emitter power terminal temperature |
Non-Patent Citations (2)
| Title |
|---|
| 大功率IGBT的短路故障检测;胡亮灯;孙驰;陈玉林;肖明恺;艾胜;;电工技术学报;20180610(11);全文 * |
| 感应加热电源IGBT驱动与保护电路的设计;孙永新;黄海波;卢军;李艳;李森;;湖北汽车工业学院学报;20200915(03);全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115201649A (en) | 2022-10-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106556791B (en) | High-power IGBT dynamic test circuit and control method thereof | |
| CN111781482B (en) | Method and device for detecting health state of bonding wire of high-power SIC MOSFET module | |
| CN112285521B (en) | Self-correcting IGBT health monitoring method | |
| CN201766490U (en) | Driving circuit based on IGBT bridge-type switch topology and protecting module thereof | |
| CN205787014U (en) | A kind of D.C. contactor main contacts testing circuit | |
| CN113567825B (en) | IGBT module bonding wire breakage online monitoring device, monitoring method and application | |
| CN102377326B (en) | Insulated gate bipolar transistor (IGBT)-bridge-switch-topology-based driving circuit and protection module thereof | |
| CN109510176A (en) | A kind of intelligent power module Drive Protecting Circuit | |
| CN108964643A (en) | A kind of drive control circuit and control method of the power device at current mirror end | |
| CN110572011B (en) | IGBT drive circuit soft switching device with short-circuit protection | |
| CN102097789A (en) | Over-current or short-circuit state detection circuit of insulated gate bipolar transistor (IGBT) | |
| CN110611298A (en) | IPM protection system for flywheel energy storage device | |
| CN115201649B (en) | Driving circuit for realizing IGBT state monitoring by spontaneous short-circuit current | |
| CN112701893A (en) | Series converter based on Si IGBT/SiC MOS hybrid parallel device and fault operation control method thereof | |
| CN115598485B (en) | Power tube aging test device and method for direct-current solid-state circuit breaker | |
| CN113848445A (en) | Method for monitoring short-circuit and open-circuit faults of IGBT (insulated Gate Bipolar transistor) in SST (Voltage tester) based on Vce | |
| CN212229096U (en) | IGBT drive plate aging test circuit | |
| CN114019341A (en) | Over-current protection circuit for IGBT dynamic test and IGBT dynamic test system | |
| CN109572436B (en) | Diagnosis system for load circuit and electric vehicle | |
| CN109950940B (en) | Valve block charging device and valve block charging control method | |
| CN110460021A (en) | A kind of IGBT protection circuit and air conditioner | |
| CN213151639U (en) | Short-circuit protection circuit and system of inverter output H-bridge IGBT | |
| CN109212433A (en) | A kind of inverter IGBT fault pre-alarming and protection circuit | |
| CN209471223U (en) | A kind of inverter IGBT fault pre-alarming and protection circuit | |
| CN212646838U (en) | Detection apparatus for electric locomotive power module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |