CN115598485B - Power tube aging test device and method for direct-current solid-state circuit breaker - Google Patents

Power tube aging test device and method for direct-current solid-state circuit breaker Download PDF

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CN115598485B
CN115598485B CN202211219636.6A CN202211219636A CN115598485B CN 115598485 B CN115598485 B CN 115598485B CN 202211219636 A CN202211219636 A CN 202211219636A CN 115598485 B CN115598485 B CN 115598485B
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power tube
current
value
voltage
circuit
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CN115598485A (en
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余彬
周旺平
蔡骏
曹一涵
连静
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Nanjing University of Information Science and Technology
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Nanjing University of Information Science and Technology
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • G01R31/2603—Apparatus or methods therefor for curve tracing of semiconductor characteristics, e.g. on oscilloscope
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/327—Testing of circuit interrupters, switches or circuit-breakers

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  • General Physics & Mathematics (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

The invention discloses a power tube aging test device and a test method of a direct current solid state breaker, and provides the power tube aging test device and the test method aiming at the short circuit current limiting working condition of the direct current solid state breaker. Compared with other power tube aging test devices and test methods, the power tube aging test device and method provided by the invention have the characteristics of high aging test efficiency, capability of comprehensively representing the aging degree of the power tube in situ on line, and particular suitability for power tube aging test under the short circuit current limiting working condition of the direct current solid state breaker.

Description

Power tube aging test device and method for direct-current solid-state circuit breaker
Technical Field
The invention relates to a power tube aging test device and a test method of a direct-current solid-state circuit breaker, belonging to the technical fields of power electronics and electrician.
Background
The direct current Solid state circuit breaker (Solid-State Circuit Breakers, SSCB) is an electronic switching device formed by utilizing Solid semiconductor power devices, has the advantages of no arc, high switching speed (microsecond level), high reliability, capability of limiting short circuit current to a lower level and the like, and is the future development direction of the direct current micro-grid fault protection technology.
When the direct current SSCB works under a typical short circuit current limiting working condition after handling short circuit faults, the power tube is subjected to coupling impact action of extremely complex electric fields, temperatures and mechanical stresses, and degradation and failure of the power tube are caused. Under the direct current SSCB short circuit current limiting working condition, the direct current bus voltage, the turn-off clamp voltage, the current limiting value, the current limiting time, the line inductance, the power tube shell temperature and other factors all have larger change spaces. The evolution rule and mechanism of the material characteristics of each layer of the power tube under the extreme condition application are what, the main weak links occur at what position, and which factors are key factors influencing the reliability of the power tube, so that the theoretical basis is still lacking at present, and the popularization and application of the direct current SSCB technology are restricted.
At present, aiming at the aging test method of the power tube, there are a second-level accelerating power cycle test method, a repeated short circuit test method and a repeated avalanche test method, and the working state of the power tube in the test process is greatly different from the working state under the direct current SSCB short circuit current limiting working condition. In the second-level acceleration power cycle test, the high power duration of the power tube is several seconds, the driving voltage keeps a higher value unchanged, the power tube works in a linear resistance area, and the power is smaller; for the repeated short circuit test and the repeated avalanche test, the high power consumption duration of the power tube is about several microseconds, the driving voltage keeps a higher value unchanged, and the power tube works in a linear amplifying region and has extremely high power. However, under the direct current SSCB short circuit current limiting working condition, the high power duration of the power tube is about tens of microseconds to several milliseconds, the driving voltage is reduced due to control, and the power is larger when the power tube works in a linear amplifying region, so that different degradation and failure mechanisms of the power tube can be generated. Therefore, the current power tube aging test method and the corresponding test device are not suitable for aging test of the direct current SSCB power tube.
In the current power tube aging process, the characteristic parameters monitored on line are only suitable for a second-level acceleration power circulation working condition, a repeated short-circuit working condition and a repeated avalanche working condition, and are difficult to be suitable for a short-circuit current-limiting working condition of a direct-current SSCB; in addition, the aging failure mechanism of the power tube under the traditional second-level power cycle is clear, only a certain aging characteristic parameter is needed to be monitored in an aging experiment, but the aging mechanism of the power tube under the direct-current SSCB short-circuit current limiting working condition is not clear, the traditional method only monitors one aging characteristic parameter, the real aging condition of the power tube is difficult to characterize, the termination time of the aging experiment cannot be accurately controlled, and various aging characteristic parameters which can comprehensively reflect the degradation of the power tube need to be monitored on line aiming at the direct-current SSCB actual working condition.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a power tube aging test device and a test method of a direct-current solid-state circuit breaker.
In order to achieve the above purpose, the invention provides a power tube aging test device of a direct current solid state circuit breaker, which comprises a direct current power protection power supply, a direct current SSCB and a data monitoring and controllable load, wherein the direct current power protection power supply is electrically connected with the direct current SSCB, and the direct current SSCB is electrically connected with the data monitoring and controllable load;
The direct current SSCB comprises a measured power tubeQ 1 Varistor MOV, drive circuit I, drive resistorR g Copper radiator, water cooling row, constant-temperature water bath device and detection resistorR Sense Current detection circuit and line inductanceL line The second isolation circuit, the third isolation circuit and the FPGA control board;
measured power tubeQ 1 The drain electrode of the power tube is connected with the point B, and the power tube is testedQ 1 G point is connected with the grid electrode of the power tube to be testedQ 1 Is connected with the point D; one end of the piezoresistor MOV is connected with the point B, and the other end of the piezoresistor MOV is connected with the point D;
driving circuit through driving resistorR g The circuit ground of the first driving circuit and the circuit ground of the current detection circuit are connected with the point D, and the point D is connected with the control point I; the water outlet of the constant-temperature water bath device is communicated with the water inlet of the copper radiator, and the water outlet of the copper radiator is communicated with the water inlet of the constant-temperature water bath device through a water cooling row;
the FPGA control board is connected with the first driving circuit through the third isolating circuit, is communicated with the current detection circuit through the second isolating circuit, and one end of the current detection circuit and the detection resistorR Sense One end of the current detection circuit is connected with the point D, and the other end of the current detection circuit and the detection resistorR Sense The other ends of the two ends are connected with the E point;
e point and line inductanceL line Is connected with one end of the line inductance L line The other end is connected with the point F.
Preferably, the DC power protection power source comprises DCVoltage source and second IGBT high-power deviceS 3 A third driving circuit and a fourth isolation circuit;
positive electrode of direct-current voltage source and second IGBT high-power deviceS 3 The collector electrodes of the direct-current voltage source are connected with the point A, the negative electrode of the direct-current voltage source is connected with the point H, and the point H is electrically connected with the power ground; second IGBT high-power deviceS 3 The emitter of the second IGBT is connected with the point B, the point B is connected with the second control ground, and the second IGBT high-power deviceS 3 The grid electrode of the transistor and the driving circuit are connected with the point C; the third driving circuit takes the second control ground as the circuit reference ground, and is connected with the FPGA control board through the fourth isolation circuit.
Preferably, the controllable load comprises a first IGBT high-power deviceS 2 Drive circuit II and load resistorR L And an isolation circuit I;
first IGBT high-power deviceS 2 Collector and load resistance of (c)R L One end is connected with the F point, and the first IGBT high-power deviceS 2 Emitter, load resistance of (c)R L The other end of the power line is connected with the H point which is connected with the power ground;
first IGBT high-power deviceS 2 The grid electrode and the driving circuit II are connected with the point I, and the driving circuit II is connected with the point H; the second driving circuit is connected with the FPGA control board through the isolation circuit.
Preferably, the data monitoring comprises a turn-on voltage on-line measuring circuit, a driving voltage on-line measuring circuit, a current detecting circuit and a data acquisition module,
the input end, the point B and the point D of the on-line measuring circuit of the on-line voltage are connected, and the output end of the on-line measuring circuit of the on-line voltage is connected with the data acquisition module; the driving voltage on-line measuring circuit is connected with the input end, the G point and the D point, and the output end of the driving voltage on-line measuring circuit is connected with the data acquisition module; the input end, the E point and the D point of the current detection circuit are connected, and the output end of the current detection circuit is connected with the data acquisition module.
The testing method of the power tube aging testing device of the direct current solid state circuit breaker adopts the power tube aging testing device of the direct current solid state circuit breaker as an execution main body, and realizes the following steps:
obtaining actual direct-current voltage source voltage under direct-current SSCB short-circuit current-limiting working conditions of different combinationsV DC The shell temperature of the power tube with the known model, the voltage value between the drain and the source when the current limit of the power tube with the known model is turned off and the actual line inductance value;
actual direct-current voltage source voltage under direct-current SSCB short-circuit current-limiting working condition based on different combinationsV DC The shell temperature of the power tube with the known model, the voltage value between the drain and the source when the power tube with the known model is in current limiting and turn-off, and the actual line inductance value are used for obtaining a corresponding relation curve of the current limiting current value and the maximum current limiting time;
Obtaining the measured power tubeQ 1 An on-resistance threshold of (c), a falling threshold of the driving voltage, and a rising threshold of the average driving voltage;
setting the current limiting value, the current limiting time, the shell temperature and the measured power tube of the power tube aging test device of the direct current solid state circuit breaker under different combinations under the direct current SSCB short circuit current limiting working condition according to the relation curve of the current limiting value and the maximum current limiting timeQ 1 Voltage value between drain and source and line inductance value when current limiting is turned off, known type power tube and tested power tubeQ 1 The model is the same;
the data acquisition module acquires data of a power tube aging test device of the direct-current solid-state circuit breaker;
obtaining the measured power tubeQ 1 An on-resistance threshold, a drive voltage drop threshold, and a drive voltage average rise threshold when failing due to aging;
and according to the data acquisition module, acquiring data, an on-resistance threshold value, a driving voltage falling threshold value and a driving voltage average value rising threshold value of the power tube aging test device of the direct current solid state circuit breaker, and judging whether to stop the power tube aging test device of the direct current solid state circuit breaker.
Preferably, the actual DC voltage source voltage under the DC SSCB short-circuit current limiting working condition based on different combinations V DC The shell temperature of the power tube with the known model, the voltage value between the drain and the source when the current limit of the power tube with the known model is turned off and the actual line inductance value are used for obtaining a corresponding relation curve of the current limit value and the maximum current limit time, and the method is realized through the following steps:
step 1, keeping a direct-current voltage source in a power tube aging test device of a direct-current solid-state circuit breaker and a power supply for maintaining the work of the power tube aging test device of the direct-current solid-state circuit breaker in an off state, measuring a gate-source resistance and a drain-source resistance of a power tube of a known model by using a universal meter, and obtaining an initial gate-source resistance of a power tube of a known model and an initial drain-source resistance of a power tube of a known model;
step 2, setting the shell temperature for the power tube with a known model by utilizing a constant-temperature water bath device in the power tube aging test device of the direct-current solid-state circuit breaker;
the second IGBT high-power device in the power tube aging test device of the direct-current solid-state circuit breaker is kept by using the FPGA control boardS 3 And power tube with known modelQ 1 In an on state, a first IGBT high-power deviceS 2 In the off state, set the DC voltage source voltageV DC And a load resistorR L The current detection circuit measures and obtains the conduction current;
Measuring drain-source voltage of tested power tube through on-line measuring circuit of conducting voltageV ds The method comprises the steps of obtaining an initial on-resistance value of a power tube of a known type a by using an on-current measured by a current detection circuit and a set shell temperature, wherein a is a positive integer;
step 3, taking the value which is 0.001 times of the initial gate-source resistance value of the a-th known type power tube as a set a-th known type power tube gate-source resistance threshold value, taking the value which is 0.001 times of the initial drain-source resistance value of the a-th known type power tube as a set a-th known type power tube drain-source resistance threshold value, and taking the value which is 1.2 times of the initial on-resistance value of the a-th known type power tube as a set a-th known type power tube on-resistance threshold value;
step 4, according to the actual DC voltage source voltage under the DC SSCB short circuit current limiting working condition of a certain combinationV DC The shell temperature of the power tube of the actual a-known type, the voltage value between the drain and the source when the current-limiting of the power tube of the actual a-known type is turned off and the actual line inductance value are firstly set by using an FPGA control board, and a single short circuit current-limiting test is carried out;
Acquiring an actual gate-source resistance of the power tube of the a-known type, an actual drain-source resistance of the power tube of the a-known type and an actual on-resistance of the power tube of the a-known type;
step 5, if the actual gate-source resistance of the a-th known type power tube is smaller than the a-th known type power tube gate-source resistance threshold, the actual drain-source resistance of the a-th known type power tube is smaller than the a-th known type power tube drain-source resistance threshold or the actual on-resistance of the a-th known type power tube is larger than the set a-th known type power tube drain-source resistance threshold, stopping testing, stopping power supply of the direct current voltage source, recording the maximum current limiting time of the a-th known type power tube under the combination under the set current limiting current value, entering step 6, otherwise, keeping the combination and the current limiting value unchanged, increasing the current limiting time, and executing step 4;
step 6, replacing the power tube with the a-known type in the step 1-5 by the power tube with the a+1-known type, changing the current-limiting value to the a+1-th current-limiting value, and executing the step 1-5 again to obtain the maximum current-limiting time of the power tube to be tested under the combination under the a+1-th current-limiting value;
Step 7, repeating step 6 until a+1 reaches a set value B, obtaining the maximum current limiting time under B current limiting current values, and finally based on the actual DC voltage source voltage under the combined DC SSCB short circuit current limiting working conditionV DC The shell temperature of the power tube with a known model, the voltage value between the drain and the source when the current limit of the power tube with a known model is turned off and the actual line inductance value to obtain the combined current limiting current value and the most currentA first relationship curve of large current limit time;
step 8, repeating the steps 1-7 for N times (N is more than or equal to 6), obtaining N relation curves of the current limiting value and the maximum current limiting time under a certain combination in total, carrying out least square method processing on the obtained N relation curves of the current limiting value and the maximum current limiting time under a certain combination, and finally obtaining the relation curve of the current limiting value and the maximum current limiting time of the combination;
step 9, judging whether to obtain the relation curve of the current limiting current value and the maximum current limiting time under all combinations, if not, replacing the actual DC voltage source voltage of other combinationsV DC And (3) executing the step (1) by using the shell temperature of the power tube with the known model, the voltage value between the drain and the source when the current-limiting of the power tube with the known model is turned off and the actual line inductance value, and if the current-limiting of the power tube with the known model is turned off, ending the operation.
Preferably, the DC voltage source voltage is set according to the relation curve of the current limiting current value and the maximum current limiting time under all the combinations obtained in the step 9V DC The shell temperature of the tested power tube, the voltage value between the drain and the source when the tested power tube is in current-limiting turn-off, the actual line inductance value, the current-limiting value and the current-limiting time, and then performing power tube aging test;
preferentially, obtain the measured power tubeQ 1 The on-resistance threshold value when failing due to aging is achieved by:
obtaining the measured power tubeQ 1 On-resistance threshold at nominal on-phaseR dson-TH Power tube to be measuredQ 1 The shell temperature and the conduction current in the rated conduction stage are set in the step 3;
obtaining measured power tube by using on-line measuring circuit of conducting voltageQ 1 Initial on-resistance value of (2)R dson-INI ；
Taking 1.2 times of the initial on-resistance value as the measured power tubeQ 1 Is the on-resistance threshold of (2)R dson-TH ；
Obtaining the measured power tubeQ 1 Under drive voltage at failure due to agingThreshold loweringV gs—HTH The method is realized by the following steps:
obtaining measured power tube by using drive voltage on-line measuring circuitQ 1 Initial drive voltage value of (2)V gs Obtaining the measured power tubeQ 1 Initial drive resistance value of (a)R g ；
Then, the current flows into the driving resistorR g Is set to the driving current of (a) I g Tube with power greater than 1mA and considered to be actually measuredQ 1 Another criterion for failure, taking into account the drive currentI g The numerical value is small, the measurement is inconvenient, and the measured power tube is obtainedQ 1 A drop threshold of a drive voltage of (a)V gs—HTH ：
V gs—HTH =V gs -I gmax *R g ；
Wherein the method comprises the steps ofI gmax =1mA；
Obtaining the measured power tubeQ 1 Rise threshold of average driving voltage at failure due to agingV gs—LTH The method is realized by the following steps:
obtaining the actual measured power tubeQ 1 Initial value of driving voltage average value in current limiting stageV gLimit-INI ；
Will beV gLimit-INI Is 1.2 times as measured power tubeQ 1 Drive voltage rise threshold for current limiting phaseV gs-LTH 。
Preferably, the current limit time is less than the maximum current limit time, and the time of the rated on-phase and off-phase reaches the second level.
Preferentially, according to the data acquisition module acquiring the data, the on-resistance threshold, the driving voltage falling threshold and the driving voltage average value rising threshold of the power tube aging test device of the direct current solid state circuit breaker, judging whether to stop the work of the power tube aging test device of the direct current solid state circuit breaker, and the method is realized by the following steps:
the method comprises the steps that data of a power tube aging test device of a direct-current solid-state circuit breaker are collected, wherein the data comprise on resistance of a rated on stage, driving voltage exceeding of the rated on stage and driving voltage average value of a current limiting stage;
If the on-resistance of the rated on-phase collected by the data collection module exceeds the on-resistance threshold, the driving voltage of the rated on-phase collected by the data collection module exceeds the falling threshold of the driving voltage, or the average value of the driving voltage of the current-limiting phase collected by the data collection module exceeds the rising threshold of the average value of the driving voltage, the power tube aging test device of the direct current solid state circuit breaker stops working.
The invention has the beneficial effects that:
(1) The invention aims at the actual working condition of the direct current SSCB, carries out the repeated ageing test on the tested power tube under the actual working condition, and overcomes the defect that the traditional power tube ageing test device and the traditional power tube ageing test method are difficult to be suitable for the actual working condition of the direct current SSCB.
(2) The invention fully considers the short-circuit current-limiting working condition of the direct-current SSCB, fully reflects the aging condition of the power tube, utilizes the on-resistance monitoring quantity to online represent the aging degree of the packaging (such as a bonding wire and a solder layer) of the power tube, and utilizes the driving voltage (average value of the driving voltage in the rated on-stage and the driving voltage in the current-limiting stage) to online represent the aging degree of the chip (such as a grid oxide layer) of the tested power tube. In the aging test, as long as any monitoring quantity exceeds a set threshold value, the aging test is stopped, the problems that the on-line in-situ monitoring of the aging characteristic parameters of the power tube is difficult and the aging condition of the power tube cannot be comprehensively reflected under the direct-current SSCB short-circuit current limiting working condition are solved, and the aging test efficiency of the power tube is improved.
(3) The testing device and the testing method are suitable for aging tests of various types of power tubes of the direct-current solid-state circuit breaker, such as conventional Si-MOSFET, si-IGBT and novel semiconductor power tubes, such as SiC-MOSFET, siC-IGBT and GaN-HEMT.
(4) In the aging test process of the power tube, the aging characteristic parameters of the power tube are monitored in situ on line, so that automatic cycle test is realized, and the aging test efficiency is improved;
the invention realizes the power tube aging test under the direct current SSCB short circuit current limiting working condition, and can extract the aging characteristic of the power tube in situ on line so as to reveal the aging mechanism of the power tube under the actual working condition;
the research of the power tube aging test device and the test method under the direct-current SSCB short-circuit current limiting working condition is carried out, the power tube aging mechanism is revealed, the reliability of the direct-current SSCB is improved from the initial design perspective, and the development of the direct-current micro-grid is promoted.
Drawings
FIG. 1 is a circuit diagram of the present device;
FIG. 2 is a timing diagram of the operation of the present device.
Detailed Description
The following examples are only for more clearly illustrating the technical aspects of the present invention, and are not intended to limit the scope of the present invention.
Example 1
As shown in fig. 1, the invention provides a power tube aging test device of a direct current solid state circuit breaker, which comprises a direct current power protection power supply, a direct current SSCB and a data monitoring and controllable load, wherein the direct current power protection power supply is electrically connected with the direct current SSCB, and the direct current SSCB is electrically connected with the data monitoring and controllable load;
the direct current SSCB comprises a measured power tubeQ 1 Varistor MOV, drive circuit I, drive resistorR g Copper radiator, water cooling row, constant-temperature water bath device and detection resistorR Sense Current detection circuit and line inductanceL line The second isolation circuit, the third isolation circuit and the FPGA control board;
measured power tubeQ 1 The drain electrode of the power tube is connected with the point B, and the power tube is testedQ 1 G point is connected with the grid electrode of the power tube to be testedQ 1 Is connected with the point D; one end of the piezoresistor MOV is connected with the point B, and the other end of the piezoresistor MOV is connected with the point D;
drive circuit one-wayOverdrive resistorR g The circuit ground of the first driving circuit and the circuit ground of the current detection circuit are connected with the point D, and the point D is connected with the control point I; the water outlet of the constant-temperature water bath device is communicated with the water inlet of the copper radiator, and the water outlet of the copper radiator is communicated with the water inlet of the constant-temperature water bath device through a water cooling row;
the FPGA control board is connected with the first driving circuit through the third isolating circuit, is communicated with the current detection circuit through the second isolating circuit, and one end of the current detection circuit and the detection resistor R Sense One end of the current detection circuit is connected with the point D, and the other end of the current detection circuit and the detection resistorR Sense The other ends of the two ends are connected with the E point;
e point and line inductanceL line Is connected with one end of the line inductanceL line The other end is connected with the point F.
Further, in this embodiment, the dc power protection power supply includes a dc voltage source and a second IGBT high-power deviceS 3 A third driving circuit and a fourth isolation circuit;
positive electrode of direct-current voltage source and second IGBT high-power deviceS 3 The collector electrodes of the direct-current voltage source are connected with the point A, the negative electrode of the direct-current voltage source is connected with the point H, and the point H is electrically connected with the power ground; second IGBT high-power deviceS 3 The emitter of the second IGBT is connected with the point B, the point B is connected with the second control ground, and the second IGBT high-power deviceS 3 The grid electrode of the transistor and the driving circuit are connected with the point C; the third driving circuit takes the second control ground as the circuit reference ground, and is connected with the FPGA control board through the fourth isolation circuit.
Further, the controllable load in this embodiment includes a first IGBT high power deviceS 2 Drive circuit II and load resistorR L And an isolation circuit I;
first IGBT high-power deviceS 2 Collector and load resistance of (c)R L One end is connected with the F point, and the first IGBT high-power deviceS 2 Emitter, load resistance of (c)R L Is connected with the other end of the H point, The H point is connected with the power ground;
first IGBT high-power deviceS 2 The grid electrode and the driving circuit II are connected with the point I, and the driving circuit II is connected with the point H; the second driving circuit is connected with the FPGA control board through the isolation circuit.
Further, the data monitoring in this embodiment includes an on-line measurement circuit for on-voltage, an on-line measurement circuit for driving voltage, a current detection circuit and a data acquisition module,
the input end, the point B and the point D of the on-line measuring circuit of the on-line voltage are connected, and the output end of the on-line measuring circuit of the on-line voltage is connected with the data acquisition module; the driving voltage on-line measuring circuit is connected with the input end, the G point and the D point, and the output end of the driving voltage on-line measuring circuit is connected with the data acquisition module; the input end, the E point and the D point of the current detection circuit are connected, and the output end of the current detection circuit is connected with the data acquisition module.
The testing method of the power tube aging testing device of the direct current solid state circuit breaker adopts the power tube aging testing device of the direct current solid state circuit breaker as an execution main body, and realizes the following steps:
obtaining actual direct-current voltage source voltage under direct-current SSCB short-circuit current-limiting working conditions of different combinationsV DC The shell temperature of the power tube with the known model, the voltage value between the drain and the source when the current limit of the power tube with the known model is turned off and the actual line inductance value;
Actual direct-current voltage source voltage under direct-current SSCB short-circuit current-limiting working condition based on different combinationsV DC The shell temperature of the power tube with the known model, the voltage value between the drain and the source when the power tube with the known model is in current limiting and turn-off, and the actual line inductance value are used for obtaining a corresponding relation curve of the current limiting current value and the maximum current limiting time;
obtaining the measured power tubeQ 1 An on-resistance threshold of (c), a falling threshold of the driving voltage, and a rising threshold of the average driving voltage;
setting power tube aging test devices of direct current solid state circuit breakers under different combinations in direct current SSCB short circuit current limiting engineering according to relation curves of current limiting value and maximum current limiting timeCurrent limiting value, current limiting time, shell temperature and measured power tube under conditionQ 1 Voltage value between drain and source and line inductance value when current limiting is turned off, known type power tube and tested power tubeQ 1 The model is the same;
the data acquisition module acquires data of a power tube aging test device of the direct-current solid-state circuit breaker;
obtaining the measured power tubeQ 1 An on-resistance threshold, a drive voltage drop threshold, and a drive voltage average rise threshold when failing due to aging;
and according to the data acquisition module, acquiring data, an on-resistance threshold value, a driving voltage falling threshold value and a driving voltage average value rising threshold value of the power tube aging test device of the direct current solid state circuit breaker, and judging whether to stop the power tube aging test device of the direct current solid state circuit breaker.
Further, in this embodiment, the actual dc voltage source voltage under the dc SSCB short-circuit current-limiting condition based on different combinationsV DC The shell temperature of the power tube with the known model, the voltage value between the drain and the source when the current limit of the power tube with the known model is turned off and the actual line inductance value are used for obtaining a corresponding relation curve of the current limit value and the maximum current limit time, and the method is realized through the following steps:
step 1, keeping a direct-current voltage source in a power tube aging test device of a direct-current solid-state circuit breaker and a power supply for maintaining the work of the power tube aging test device of the direct-current solid-state circuit breaker in an off state, measuring a gate-source resistance and a drain-source resistance of a power tube of a known model by using a universal meter, and obtaining an initial gate-source resistance of a power tube of a known model and an initial drain-source resistance of a power tube of a known model;
step 2, setting the shell temperature for the power tube with a known model by utilizing a constant-temperature water bath device in the power tube aging test device of the direct-current solid-state circuit breaker;
the second IGBT high-power device in the power tube aging test device of the direct-current solid-state circuit breaker is kept by using the FPGA control boardS 3 And power tube with known modelQ 1 In an on state, a first IGBT high-power device S 2 In the off state, set the DC voltage source voltageV DC And a load resistorR L The current detection circuit measures and obtains the conduction current;
measuring drain-source voltage of tested power tube through on-line measuring circuit of conducting voltageV ds The method comprises the steps of obtaining an initial on-resistance value of a power tube of a known type a by using an on-current measured by a current detection circuit and a set shell temperature, wherein a is a positive integer;
step 3, taking the value which is 0.001 times of the initial gate-source resistance value of the a-th known type power tube as a set a-th known type power tube gate-source resistance threshold value, taking the value which is 0.001 times of the initial drain-source resistance value of the a-th known type power tube as a set a-th known type power tube drain-source resistance threshold value, and taking the value which is 1.2 times of the initial on-resistance value of the a-th known type power tube as a set a-th known type power tube on-resistance threshold value;
step 4, according to the actual DC voltage source voltage under the DC SSCB short circuit current limiting working condition of a certain combinationV DC The shell temperature of the power tube of the actual a-known type, the voltage value between the drain and the source when the current-limiting of the power tube of the actual a-known type is turned off and the actual line inductance value are firstly set by using an FPGA control board, and a single short circuit current-limiting test is carried out;
Acquiring an actual gate-source resistance of the power tube of the a-known type, an actual drain-source resistance of the power tube of the a-known type and an actual on-resistance of the power tube of the a-known type;
step 5, if the actual gate-source resistance of the a-th known type power tube is smaller than the a-th known type power tube gate-source resistance threshold, the actual drain-source resistance of the a-th known type power tube is smaller than the a-th known type power tube drain-source resistance threshold or the actual on-resistance of the a-th known type power tube is larger than the set a-th known type power tube drain-source resistance threshold, stopping testing, stopping power supply of the direct current voltage source, recording the maximum current limiting time of the a-th known type power tube under the combination under the set current limiting current value, entering step 6, otherwise, keeping the combination and the current limiting value unchanged, increasing the current limiting time, and executing step 4;
step 6, replacing the power tube with the a-known type in the step 1-5 by the power tube with the a+1-known type, changing the current-limiting value to the a+1-th current-limiting value, and executing the step 1-5 again to obtain the maximum current-limiting time of the power tube to be tested under the combination under the a+1-th current-limiting value;
Step 7, repeating step 6 until a+1 reaches a set value B, obtaining the maximum current limiting time under B current limiting current values, and finally based on the actual DC voltage source voltage under the combined DC SSCB short circuit current limiting working conditionV DC The shell temperature of the power tube with the known model, the voltage value between the drain and the source when the current limit of the power tube with the known model is turned off and the actual line inductance value, and a first relation curve of the combined current limiting current value and the maximum current limiting time is obtained;
step 8, repeating the steps 1-7 for N times (N is more than or equal to 6), obtaining N relation curves of the current limiting value and the maximum current limiting time under a certain combination in total, carrying out least square method processing on the obtained N relation curves of the current limiting value and the maximum current limiting time under a certain combination, and finally obtaining the relation curve of the current limiting value and the maximum current limiting time of the combination;
step 9, judging whether to obtain the relation curve of the current limiting current value and the maximum current limiting time under all combinations, if not, replacing the actual DC voltage source voltage of other combinationsV DC And (3) executing the step (1) by using the shell temperature of the power tube with the known model, the voltage value between the drain and the source when the current-limiting of the power tube with the known model is turned off and the actual line inductance value, and if the current-limiting of the power tube with the known model is turned off, ending the operation.
Further, in this embodiment, the dc voltage source voltage is set according to the relationship curve between the current limiting current value and the maximum current limiting time under all the combinations obtained in step 9V DC The shell temperature of the measured power tube and the limit of the measured power tubeWhen the current is turned off, the voltage value between the drain and the source, the actual line inductance value, the current limiting value and the current limiting time are measured, and then the power tube aging test is carried out;
further, in this embodiment, the measured power tube is obtainedQ 1 The on-resistance threshold value when failing due to aging is achieved by:
obtaining the measured power tubeQ 1 On-resistance threshold at nominal on-phaseR dson-TH Power tube to be measuredQ 1 The shell temperature and the conduction current in the rated conduction stage are set in the step 3;
obtaining measured power tube by using on-line measuring circuit of conducting voltageQ 1 Initial on-resistance value of (2)R dson-INI ；
Taking 1.2 times of the initial on-resistance value as the measured power tubeQ 1 Is the on-resistance threshold of (2)R dson-TH ；
Obtaining the measured power tubeQ 1 Drop threshold of drive voltage at failure due to agingV gs—HTH The method is realized by the following steps:
obtaining measured power tube by using drive voltage on-line measuring circuitQ 1 Initial drive voltage value of (2)V gs Obtaining the measured power tubeQ 1 Initial drive resistance value of (a)R g ；
Then, the current flows into the driving resistor R g Is set to the driving current of (a)I g Tube with power greater than 1mA and considered to be actually measuredQ 1 Another criterion for failure, taking into account the drive currentI g The numerical value is small, the measurement is inconvenient, and the measured power tube is obtainedQ 1 A drop threshold of a drive voltage of (a)V gs—HTH ：
V gs—HTH =V gs -I gmax *R g ；
Wherein the method comprises the steps ofI gmax =1mA；
Obtaining the measured power tubeQ 1 Rise threshold of average driving voltage at failure due to agingV gs—LTH The method is realized by the following steps:
obtaining the actual measured power tubeQ 1 Initial value of driving voltage average value in current limiting stageV gLimit-INI ；
Will beV gLimit-INI Is 1.2 times as measured power tubeQ 1 Drive voltage rise threshold for current limiting phaseV gs-LTH 。
Further, in this embodiment, the current limit time is smaller than the maximum current limit time, and the time of the rated on-state and off-state reaches the second level.
Further, in this embodiment, according to the data acquisition module acquiring the data, the on-resistance threshold, the driving voltage drop threshold and the driving voltage average value rise threshold of the power tube aging test device of the dc solid state circuit breaker, it is determined whether to stop the operation of the power tube aging test device of the dc solid state circuit breaker, by the following steps:
the method comprises the steps that data of a power tube aging test device of a direct-current solid-state circuit breaker are collected, wherein the data comprise on resistance of a rated on stage, driving voltage exceeding of the rated on stage and driving voltage average value of a current limiting stage;
If the on-resistance of the rated on-phase collected by the data collection module exceeds the on-resistance threshold, the driving voltage of the rated on-phase collected by the data collection module exceeds the falling threshold of the driving voltage, or the average value of the driving voltage of the current-limiting phase collected by the data collection module exceeds the rising threshold of the average value of the driving voltage, the power tube aging test device of the direct current solid state circuit breaker stops working.
Example two
A power tube aging test device of a direct current solid state circuit breaker comprises a direct current power protection power supply, a direct current SSCB, a data monitoring and controllable load;
the direct current power protection power supply is electrically connected with the direct current SSCB, and the direct current SSCB is electrically connected with the data monitoring and controllable load.
The direct-current power protection power supply comprises a direct-current voltage source and a second IGBT high-power deviceS 3 A third driving circuit and a fourth isolation circuit;
positive electrode of direct-current voltage source and second IGBT high-power deviceS 3 The collector electrodes of the direct-current voltage source are connected to the point A, and the negative electrode of the direct-current voltage source is connected with the point H of the power ground; second IGBT high-power deviceS 3 The emitter of the second IGBT is connected with the point B, the point B is connected with the second control ground, and the second IGBT high-power deviceS 3 The grid electrode of the (C) is connected with the driving circuit III at the point C; the third driving circuit takes the second control ground as the circuit reference ground, and is connected with the FPGA control board through the fourth isolation circuit.
The direct current SSCB comprises a measured power tubeQ 1 The voltage dependent resistor MOV, the first driving circuit, the copper radiator, the water cooling row, the constant-temperature water bath device and the detection resistorR Sense Current detection circuit and line inductanceL line The second isolation circuit, the third isolation circuit and the FPGA control board;
measured power tubeQ 1 The drain electrode of the power tube is connected with the point B, and the power tube is testedQ 1 G point is connected with the grid electrode of the power tube to be testedQ 1 Is connected with the point D; one end of the piezoresistor MOV is connected with the point B, and the other end of the piezoresistor MOV is connected with the point D;
the first driving circuit is connected with the G point, the circuit ground of the first driving circuit and the circuit ground of the current detection circuit are both connected with the D point, and the D point is connected with the first control ground; the water outlet of the constant-temperature water bath device is communicated with the water inlet of the copper radiator, and the water outlet of the copper radiator is communicated with the water inlet of the constant-temperature water bath device through a water cooling row;
the FPGA control board is connected with the first driving circuit through the third isolating circuit, is communicated with the current detection circuit through the second isolating circuit, and one end of the current detection circuit and the detection resistorR Sense One end of the current detection circuit is connected with the point D, and the other end of the current detection circuit and the detection resistorR Sense The other ends of the two ends are connected with the E point;
e point and line inductanceL line Is connected with one end of the line inductanceL line The other end is connected with the point F.
The controllable load comprises a first IGBT high-power deviceS 2 Drive circuit II and load resistorR L And an isolation circuit I;
first IGBT high-power deviceS 2 Collector and load resistance of (c)R L One end is connected with the F point, and the first IGBT high-power deviceS 2 Emitter, load resistance of (c)R L The other end of the power line is connected with the H point which is connected with the power ground;
first IGBT high-power deviceS 2 The grid electrode and the driving circuit II are connected with the point I, and the driving circuit II is connected with the point H; the second driving circuit is connected with the FPGA control board through the isolation circuit.
The driving circuit receives signals from the FPGA control board through the isolation circuit III, and the FPGA control board sends control signals to the driving circuit I through the isolation circuit III so that the driving circuit I controls the driving circuit II d AndI SSCB is a numerical value and duration of (a); the drive circuit receives signals from the FPGA control panel through the isolating circuit, and the on-line measurement circuit of the on-line measurement and collection of the on-line voltageQ 1 On-line measurement and acquisition of the on-line voltage of the drive voltage by the on-line measurement circuitQ 1 The driving voltage and current of the (C) sensor are measured and collected on line by a current detection circuitQ 1 Drain current of (2);
the data monitoring comprises a conducting voltage on-line measuring circuit, a driving voltage on-line measuring circuit, a current detecting circuit and a data acquisition module,
The input end of the on-line measuring circuit of the on-voltage is connected with the point B and the point D, and the output end of the on-line measuring circuit of the on-voltage is connected with the data acquisition module; the input end of the driving voltage on-line measuring circuit is connected with the G point and the D point, and the output end of the driving voltage on-line measuring circuit is connected with the data acquisition module; the input end of the current detection circuit is connected with the E point and the D point, and the output end of the current detection circuit is connected with the data acquisition module.
The direct current power protection power supply part provides high-power direct current voltage for the power tube aging component to be tested and passes through a second IGBT high-power deviceS 3 And necessary fault protection is provided for the power tube aging component to be tested. When working normally, the second IGBT high-power deviceS 3 Remain on, but when an uncontrollable high-current short-circuit fault occurs, the second IGBT high-power deviceS 3 The power tube aging test system is immediately turned off, and the power tube aging test system is protected.
The direct current SSCB and the controllable load are matched with each other, and the FPGA control board sends a control signal to the controllable load, so that the controllable load is periodically and repeatedly switched in a rated state and a short-circuit state; the FPGA control board is connected with a controllable load through a current detection circuit, and controls the tested power tube Q 1 Driving voltage of (a) power tube to be measuredQ 1 Drain currentI d And the corresponding duration time, the ageing state of the power tube to be tested is circularly tested;
the copper radiator, the water cooling row and the constant-temperature water bath device are tested power pipesQ 1 Providing constant shell temperature, namely heating water in a constant-temperature water bath device to constant temperature and pumping the water into a copper radiator (internally provided with a water channel), wherein the copper radiator and a tested power tube are connected through a thermal interface materialQ 1 The heat dissipation shell contacts, water with constant temperature flows into the water cooling row after passing through the copper radiator, a heat dissipation fan is arranged outside the water cooling row, and a power tube to be tested is arrangedQ 1 Is carried away by heat and cooled by water;
the cooled water enters the constant-temperature water bath device again, is heated to constant temperature and then is pumped to the copper radiator again, so that the measured power tube is ensuredQ 1 The shell temperature is constant.
The current detection circuit and the current detection circuit of the direct current SSCB share one set of circuit, and the data acquisition module has an electric isolation function and is used for on-line monitoring of the tested power tubeQ 1 On-resistance of (2) and measured power tubeQ 1 Is set to the driving voltage of the driving circuit.
Fig. 2 is a waveform diagram of the working sequence of the present invention, and the specific working principle of the present invention is as follows:
t 0 -t 1 in the stage, the FPGA control board sends out multiple paths of control signals to enable the first IGBT high-power device S 2 Power tube to be measuredQ 1 All are in an off state, and the second IGBT high-power deviceS 3 In an on state in whichV S3 、V gs 、V ge Respectively represent a second IGBT high-power deviceS 3 High-power device of first IGBTS 2 Power tube to be measuredQ 1 The high level represents on and the low level represents off. At this stage, the voltageV DC Shell temperatureT C Clamping voltageV op 、Line inductanceL line Etc. are all set according to a combination, usuallyV DC About several hundred volts (V), such as 270V,400V or 800V;T C varying from ambient temperature to 100 c,V op is thatV DC Such as 1.5 times, 2 times or 3 times; line inductanceL line Representing the parasitic inductance of the line, the value is smaller, which is in the order of microhenry.
t 1 -t 2 In the stage of the process, the process comprises the steps of,t 1 at moment, the FPGA control panel sends out a control signal to enable the tested power tubeQ 1 The driving voltage value of (2) is higher, which is marked asV gson In an on state. Setting a load resistorR L So that the measured power tubeQ 1 In rated conduction stage, rated current isI N The on voltage isV dson The corresponding on-resistance isR dson =V dson /I N . The second IGBT high-power deviceS 3 Still keep the on state, the first IGBT high-power deviceS 2 The off state is still maintained. Care should be takenIs that at this stageI N AndV dson the value should be small so that the power tube consumes power (i.e., P = I N* V dson ) Is smaller, not causing larger junction temperature change, i.et 1 Junction temperature of power tube at momentt 2 The temperature difference of the power tube junction at the moment is not more than 5 ℃ so as to simulate the actual working condition of the direct current solid state circuit breaker, and the method is also convenient for evaluating the measured power tube by using the on-resistance and the driving voltage at the stageQ 1 Is used for the aging degree of the steel sheet. Duration of the same timet on Longer, on the order of seconds. The phase data monitoring part pairI N ，V dson AndV gson and accurately acquiring and storing the power tube in real time on line, and simultaneously comparing the power tube with the on-resistance threshold value and the driving voltage drop threshold value of the rated on-state when the tested power tube fails in real time to judge whether the aging test is finished.
t 2 -t 3 Stage, the second IGBT high-power deviceS 3 Remain open, butt 2 At moment, the FPGA control board sends out a control signal, and the first IGBT high-power deviceS 2 Starting to conduct and measuring power tubeQ 1 Drain currentI d (or direct current SSCB input currentI SSCB ) When the current suddenly increases, the FPGA control board immediately responds after the current detection circuit detects the current value, and the detected power tube is loweredQ 1 A kind of electronic deviceV gs To limitI d Is finally increased by the form of a closed current loopI d Limiting to desired values, i.e.I Limit In this processV gs The value gradually decreases, and the average value is recorded as V gLimit . Duration of the phaset sc1 The values are small, varying from tens of microseconds to milliseconds. But howeverI Limit The numerical value is larger according tot sc1 The difference in the number of the values is that,I Limit the value is the rated on-currentI N Varying from about 1.5 to about 10 times,V gLimit the value changes near the starting voltage of the power tube and is smaller than the driving voltage in the rated conduction stageV gson . The phase data monitoring part pairI Limit AndV gLimit accurately collecting and storing the drain-source voltage of the tested power tube at the stage in real time on lineV ds The numerical value is larger, and the voltage is equal to the voltage of a direct current busV DC The values are similar, and due to the action of the on-line measuring circuit of the on-voltage, the voltage value can be clamped to a lower value such as several volts, thereby ensuring the rated on-stageV dson Is measured accurately on line; this stageV gLimit The value is accurately measured by a driving voltage on-line measuring circuit, is finally collected and stored by a data collecting module, and is simultaneously compared with the rising threshold value of the average driving voltage in the current limiting stage when the tested power tube fails in real time to judge whether the aging test is finished.
t 3 -t 4 Stage of theS 3 Remain open, butt 3 At the moment, the current limiting is finished, the FPGA control panel sends out a control signal, and the tested power tubeQ 1 Is reduced to a negative value, is in an off state, but due to the current limiting inductance L line Still large energy is needed to be consumed by MOV and is measured in the power tubeQ 1 Is higher than the two ends of the drain and source electrodeV DC Clamping voltage of (2)V op . Duration of this phaset sc2 From the following componentsL line AndI Limit is also typically on the order of microseconds.
t 4 -t 5 Stage of theS 3 The on state is still maintained.t 4 Time of dayL line All the energy in the system is consumed by the MOV, and the FPGA control panel sends out a control signalNumber is that the first IGBT high-power deviceS 2 The load is turned off, and the initial state is restored, and the next aging period is waited for. Duration of the phaset off The order of magnitude is also in the second level, and the measured power tube is ensuredQ 1 At the position oft 2 -t 3 The high heat generated by the stage can be dissipated at this stage, i.e.,T C restoring the initial state.
Thereafter, the circuit repeatst 1 -t 5 The working state of the stage is not described in detail.
In summary, for the short-circuit current-limiting working condition of the direct-current solid-state circuit breaker, the invention utilizes the on-resistance, the driving voltage and the driving voltage average value in the current-limiting stage of the rated conduction stage of the power tube under the actual working condition to comprehensively monitor the aging degree of the tested power tube in situ. Compared with other power tube aging test devices and test methods, the power tube aging test device and method provided by the invention have the characteristics of high aging test efficiency, capability of comprehensively representing the aging degree of the power tube in situ on line, and particular suitability for power tube aging test under the short circuit current limiting working condition of the direct current solid state breaker.
DC voltage source and second IGBT high-power deviceS 3 Third driving circuit, fourth isolating circuit and tested power tubeQ 1 The voltage dependent resistor MOV, the first driving circuit, the copper radiator, the water cooling row, the constant-temperature water bath device and the detection resistorR Sense Current detection circuit and line inductanceL line Isolation circuit II, isolation circuit III, FPGA control panel and first IGBT high-power deviceS 2 Drive circuit II and load resistorR L The above components of the isolation circuit I, the on-line measurement circuit of the on-voltage, the on-line measurement circuit of the driving voltage, the current detection circuit and the data acquisition module can be of various types in the prior art, and a person skilled in the art can select a proper type according to actual requirements, so that the embodiment is not exemplified one by one.
The foregoing is merely a preferred embodiment of the present invention, and it should be noted that modifications and variations could be made by those skilled in the art without departing from the technical principles of the present invention, and such modifications and variations should also be regarded as being within the scope of the invention.

Claims (7)

1. The power tube aging test device of the direct current solid state circuit breaker is characterized by comprising a direct current power protection power supply, a direct current SSCB and a data monitoring and controllable load, wherein the direct current power protection power supply is electrically connected with the direct current SSCB, and the direct current SSCB is electrically connected with the data monitoring and controllable load;
The direct current SSCB comprises a measured power tubeQ 1 Varistor MOV, drive circuit I, drive resistorR g Copper radiator, water cooling row, constant-temperature water bath device and detection resistorR Sense Current detection circuit and line inductanceL line The second isolation circuit, the third isolation circuit and the FPGA control board;
measured power tubeQ 1 The drain electrode of the power tube is connected with the point B, and the power tube is testedQ 1 G point is connected with the grid electrode of the power tube to be testedQ 1 Is connected with the point D; one end of the piezoresistor MOV is connected with the point B, and the other end of the piezoresistor MOV is connected with the point D;
driving circuit through driving resistorR g The circuit ground of the first driving circuit and the circuit ground of the current detection circuit are connected with the point D, and the point D is connected with the control point I; the water outlet of the constant-temperature water bath device is communicated with the water inlet of the copper radiator, and the water outlet of the copper radiator is communicated with the water inlet of the constant-temperature water bath device through a water cooling row;
the FPGA control board is connected with the first driving circuit through the third isolating circuit, and is communicated with the first end of the current detection circuit, the second end of the current detection circuit and the detection resistor through the second isolating circuitR Sense One end of the current detection circuit is connected with the point D, and the third end of the current detection circuit and the detection resistorR Sense The other ends of the two ends are connected with the E point;
e point and line inductance L line Is connected with one end of the line inductanceL line The other end is connected with the point F;
the direct-current power protection power supply comprises a direct-current voltage source and a second IGBT high-power deviceS 3 A third driving circuit and a fourth isolation circuit;
positive electrode of direct-current voltage source and second IGBT high-power deviceS 3 The collector electrodes of the direct-current voltage source are connected with the point A, the negative electrode of the direct-current voltage source is connected with the point H, and the point H is electrically connected with the power ground; second IGBT high-power deviceS 3 The emitter of the second IGBT is connected with the point B, the point B is connected with the second control ground, and the second IGBT high-power deviceS 3 The grid electrode of the transistor and the driving circuit are connected with the point C; the third driving circuit takes the second control ground as a circuit reference ground, and is connected with the FPGA control board through the fourth isolation circuit;
the controllable load comprises a first IGBT high-power deviceS 2 Drive circuit II and load resistorR L And an isolation circuit I;
first IGBT high-power deviceS 2 Collector and load resistance of (c)R L One end is connected with the F point, and the first IGBT high-power deviceS 2 Emitter, load resistance of (c)R L The other end of the power line is connected with the H point which is connected with the power ground;
first IGBT high-power deviceS 2 The grid electrode and the driving circuit II are connected with the point I, and the driving circuit II is connected with the point H; the second driving circuit is connected with the FPGA control board through the first isolation circuit;
The data monitoring comprises a conducting voltage on-line measuring circuit, a driving voltage on-line measuring circuit, a current detecting circuit and a data acquisition module,
one input end of the on-line measuring circuit of the on-voltage is connected with the point B, the other input end of the on-line measuring circuit of the on-voltage is connected with the point D, and the output end of the on-line measuring circuit of the on-voltage is connected with the data acquisition module; one input end of the driving voltage on-line measuring circuit is connected with the G point, the other input end of the driving voltage on-line measuring circuit is connected with the D point, and the output end of the driving voltage on-line measuring circuit is connected with the data acquisition module; the second end of the current detection circuit is connected with the point E, the third end of the current detection circuit is connected with the point D, and the fourth end of the current detection circuit is connected with the data acquisition module.
2. The test method of the power tube aging test device of the direct current solid state circuit breaker is characterized in that the power tube aging test device of the direct current solid state circuit breaker is adopted as an execution main body, and the following steps are realized:
obtaining actual direct-current voltage source voltage under direct-current SSCB short-circuit current-limiting working conditions of different combinationsV DC The shell temperature of the power tube with the known model, the voltage value between the drain and the source when the current limit of the power tube with the known model is turned off and the actual line inductance value;
Actual direct-current voltage source voltage under direct-current SSCB short-circuit current-limiting working condition based on different combinationsV DC The shell temperature of the power tube with the known model, the voltage value between the drain and the source when the power tube with the known model is in current limiting and turn-off, and the actual line inductance value are used for obtaining a corresponding relation curve of the current limiting current value and the maximum current limiting time;
obtaining the measured power tubeQ 1 An on-resistance threshold of (c), a falling threshold of the driving voltage, and a rising threshold of the average driving voltage;
setting the current limiting value, the current limiting time, the shell temperature and the measured power tube of the power tube aging test device of the direct current solid state circuit breaker under different combinations under the direct current SSCB short circuit current limiting working condition according to the relation curve of the current limiting value and the maximum current limiting timeQ 1 Voltage value between drain and source and line inductance value when current limiting is turned off, known type power tube and tested power tubeQ 1 The model is the same;
the data acquisition module acquires data of a power tube aging test device of the direct-current solid-state circuit breaker;
obtaining the measured power tubeQ 1 An on-resistance threshold, a drive voltage drop threshold, and a drive voltage average rise threshold when failing due to aging;
and according to the data acquisition module, acquiring data, an on-resistance threshold value, a driving voltage falling threshold value and a driving voltage average value rising threshold value of the power tube aging test device of the direct current solid state circuit breaker, and judging whether to stop the power tube aging test device of the direct current solid state circuit breaker.
3. The method for testing a power tube burn-in test apparatus for a DC solid state circuit breaker according to claim 2, wherein,
actual direct-current voltage source voltage under direct-current SSCB short-circuit current-limiting working condition based on different combinationsV DC The shell temperature of the power tube with the known model, the voltage value between the drain and the source when the current limit of the power tube with the known model is turned off and the actual line inductance value are used for obtaining a corresponding relation curve of the current limit value and the maximum current limit time, and the method is realized through the following steps:
step 1, keeping a direct-current voltage source in a power tube aging test device of a direct-current solid-state circuit breaker and a power supply for maintaining the work of the power tube aging test device of the direct-current solid-state circuit breaker in an off state, measuring a gate-source resistance and a drain-source resistance of a power tube of a known model by using a universal meter, and obtaining an initial gate-source resistance of a power tube of a known model and an initial drain-source resistance of a power tube of a known model;
step 2, setting the shell temperature for the power tube with a known model by utilizing a constant-temperature water bath device in the power tube aging test device of the direct-current solid-state circuit breaker;
the second IGBT high-power device in the power tube aging test device of the direct-current solid-state circuit breaker is kept by using the FPGA control board S 3 And a power tube Q of a known model 2 In an on state, a first IGBT high-power deviceS 2 In the off state, set the DC voltage source voltageV DC And a load resistorR L The current detection circuit measures and obtains the conduction current;
measuring drain-source voltage of tested power tube through on-line measuring circuit of conducting voltageV ds The method comprises the steps of obtaining an initial on-resistance value of a power tube of a known type a by using an on-current measured by a current detection circuit and a set shell temperature, wherein a is a positive integer;
step 3, taking the value which is 0.001 times of the initial gate-source resistance value of the a-th known type power tube as a set a-th known type power tube gate-source resistance threshold value, taking the value which is 0.001 times of the initial drain-source resistance value of the a-th known type power tube as a set a-th known type power tube drain-source resistance threshold value, and taking the value which is 1.2 times of the initial on-resistance value of the a-th known type power tube as a set a-th known type power tube on-resistance threshold value;
step 4, according to the actual DC voltage source voltage under the DC SSCB short circuit current limiting working condition of a certain combinationV DC The shell temperature of the power tube of the actual a-known type, the voltage value between the drain and the source when the current-limiting of the power tube of the actual a-known type is turned off and the actual line inductance value are firstly set by using an FPGA control board, and a single short circuit current-limiting test is carried out;
Acquiring an actual gate-source resistance of the power tube of the a-known type, an actual drain-source resistance of the power tube of the a-known type and an actual on-resistance of the power tube of the a-known type;
step 5, if the actual gate-source resistance of the a-th known type power tube is smaller than the a-th known type power tube gate-source resistance threshold, the actual drain-source resistance of the a-th known type power tube is smaller than the a-th known type power tube drain-source resistance threshold or the actual on-resistance of the a-th known type power tube is larger than the set a-th known type power tube drain-source resistance threshold, stopping testing, stopping power supply of the direct current voltage source, recording the maximum current limiting time of the a-th known type power tube under the combination under the set current limiting current value, entering step 6, otherwise, keeping the combination and the current limiting value unchanged, increasing the current limiting time, and executing step 4;
step 6, replacing the power tube with the a-known type in the step 1-5 by the power tube with the a+1-known type, changing the current-limiting value to the a+1-th current-limiting value, and executing the step 1-5 again to obtain the maximum current-limiting time of the power tube to be tested under the combination under the a+1-th current-limiting value;
Step 7, repeating step 6 until a+1 reaches a set value B, obtaining the maximum current limiting time under B current limiting current values, and finally based on the actual DC voltage source voltage under the combined DC SSCB short circuit current limiting working conditionV DC The shell temperature of the power tube with the known model, the voltage value between the drain and the source when the current limit of the power tube with the known model is turned off and the actual line inductance value, and a first relation curve of the combined current limiting current value and the maximum current limiting time is obtained;
step 8, repeating the steps 1-7 for N times, wherein N is more than or equal to 6, obtaining N relation curves of the current limiting value and the maximum current limiting time under a certain combination in total, carrying out least square processing on the obtained N relation curves of the current limiting value and the maximum current limiting time under a certain combination, and finally obtaining the relation curve of the current limiting value and the maximum current limiting time of the combination;
step 9, judging whether to obtain the relation curve of the current limiting current value and the maximum current limiting time under all combinations, if not, replacing the actual DC voltage source voltage of other combinationsV DC And (3) executing the step (1) by using the shell temperature of the power tube with the known model, the voltage value between the drain and the source when the current-limiting of the power tube with the known model is turned off and the actual line inductance value, and if the current-limiting of the power tube with the known model is turned off, ending the operation.
4. The method for testing a power tube burn-in test apparatus for a DC solid state circuit breaker according to claim 3, wherein,
setting a DC voltage source voltage according to the relation curve of the current limiting current value and the maximum current limiting time under all the combinations obtained in the step 9V DC The shell temperature of the tested power tube, the voltage value between the drain and the source when the tested power tube is in current-limiting and turn-off, the actual line inductance value, the current-limiting value and the current-limiting time, and then the power tube aging test is carried out.
5. The method for testing a power tube burn-in test apparatus for a DC solid state circuit breaker according to claim 3, wherein,
obtaining the measured power tubeQ 1 Because of the old ageThe on-resistance threshold value when the transistor fails is realized by the following steps:
obtaining the measured power tubeQ 1 On-resistance threshold at nominal on-phaseR dson-TH Power tube to be measuredQ 1 The shell temperature and the conduction current in the rated conduction stage are set in the step 3;
obtaining measured power tube by using on-line measuring circuit of conducting voltageQ 1 Initial on-resistance value of (2)R dson-INI ；
Taking 1.2 times of the initial on-resistance value as the measured power tubeQ 1 Is the on-resistance threshold of (2)R dson-TH ；
Obtaining the measured power tubeQ 1 Drop threshold of drive voltage at failure due to aging V gs—HTH The method is realized by the following steps:
obtaining measured power tube by using drive voltage on-line measuring circuitQ 1 Initial drive voltage value of (2)V gs Obtaining the measured power tubeQ 1 Initial drive resistance value of (a)R g ；
Obtaining the measured power tubeQ 1 A drop threshold of a drive voltage of (a)V gs—HTH ：
V gs—HTH =V gs -I gmax *R g ；
Wherein the method comprises the steps ofI gmax =1mA；
Obtaining the measured power tubeQ 1 Rise threshold of average driving voltage at failure due to agingV gs—LTH The method is realized by the following steps:
obtaining the actual measured power tubeQ 1 Initial value of driving voltage average value in current limiting stageV gLimit-INI ；
Will beV gLimit-INI Is 1.2 times as measured power tubeQ 1 Drive voltage rise threshold for current limiting phaseV gs-LTH 。
6. The method of claim 2, wherein the current limit time is less than a maximum current limit time, and the time of the rated on-phase and off-phase reaches the second level.
7. The method for testing a power tube burn-in test apparatus for a DC solid state circuit breaker according to claim 2, wherein,
according to the data acquisition module, the data, the on-resistance threshold, the driving voltage falling threshold and the driving voltage average value rising threshold of the power tube aging test device of the direct current solid state circuit breaker are acquired, and whether the power tube aging test device of the direct current solid state circuit breaker stops working is judged, and the method is realized through the following steps:
Collecting data of a power tube aging test device of the direct current solid state circuit breaker, wherein the data comprise on resistance of a rated on stage, driving voltage of the rated on stage and driving voltage average value of a current limiting stage;
if the on-resistance of the rated on-phase collected by the data collection module exceeds the on-resistance threshold, the driving voltage of the rated on-phase collected by the data collection module exceeds the falling threshold of the driving voltage, or the average value of the driving voltage of the current-limiting phase collected by the data collection module exceeds the rising threshold of the average value of the driving voltage, the power tube aging test device of the direct current solid state circuit breaker stops working.
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