CN102082418B - Method for setting overcurrent protection point for insulated gate bipolar transistor - Google Patents
Method for setting overcurrent protection point for insulated gate bipolar transistor Download PDFInfo
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- CN102082418B CN102082418B CN201110030882.2A CN201110030882A CN102082418B CN 102082418 B CN102082418 B CN 102082418B CN 201110030882 A CN201110030882 A CN 201110030882A CN 102082418 B CN102082418 B CN 102082418B
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- igbt
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- overcurrent
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Abstract
The invention provides a method for setting an overcurrent protection point for an insulated gate bipolar transistor, which comprises the step of setting an overcurrent protection point according to IGBT manufacturing process so as to control the cutoff current of IGBT within double rated current at different junction temperature and guarantee safe usage of an IGBT. The method for setting the overcurrent protection point takes the influence of junction temperature of IGBT on the overcurrent protection point into consideration, improves the detection accuracy, and protects the IGBT more effectively, timely and reliably.
Description
Technical field
The invention belongs to power electronic devices field, be specifically related to a kind of method to set up of overcurrent protection point for insulated gate bipolar transistor.
Background technology
Insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) be by power transistor (GiantTransistor, and field-effect transistor (Metal-Oxide-Semiconductor Field-Effect Transistor GTR), MOSFET) the compound full-control type voltage driven type power semiconductor formed, IGBT has the advantage of the high input impedance of MOSFET and low conduction voltage drop two aspect of GTR concurrently.GTR saturation pressure reduces, and current carrying density is large, but drive current is larger; MOSFET driving power is very little, and switching speed is fast, but conduction voltage drop is large, and current carrying density is little.IGBT combines the advantage of above two kinds of devices, driving power is little and saturation pressure reduces, its frequency characteristic, between MOSFET and power transistor, normally can work in tens kHz frequency ranges, obtain and apply more and more widely in modern power electronics technology.
Because IGBT has switching speed soon, conduction voltage drop is low, and driving power is little, and operating frequency is high, and gate pole controls the features such as convenient, in the big or middle power conversion system of upper frequency, occupy leading position.In the application of IGBT, the driving of IGBT, protection and these three problems of absorption are all vital, wherein overcurrent protection especially IGBT should in key technology.Under IGBT is usually operated at high-power, that environment is changeable environment; and in power conversion, play central role; IGBT the electric current of safe shutdown can be only the rated current of devices of 2 times; damage because IGBT itself easily overcurrent occurs, the whether reliable direct relation of the therefore overcurrent protection of IGBT safety, the reliability service of various product.
At present, IGBT over-current detection mainly contains two kinds of modes: one is direct-detection collector current value I
c, judge whether overcurrent according to this current value, this Measures compare is directly perceived, but accuracy of detection is low, poor anti jamming capability, seldom uses in engineering; Two is adopt Indirect Electro platen press, and Indirect Electro platen press utilizes under a certain forward grid voltage under forward conduction state exactly, tube voltage drop V
cewith collector current I
cproportional characteristic, by detecting V
cejudge I
cthe method of size.When collector current Ic increases, saturation voltage drop V
cealso increase thereupon, when there is overcurrent condition in IGBT, V
cesaturation voltage drop also increases to respective value, therefore by V during detection IGBT conducting
cethe threshold value of saturation voltage drop and setting compares and just can judge whether to occur overcurrent condition, and this detection method is simple, convenient, and engineering is widely used.
But existing utilization detects V
cevoltage judges whether IGBT occurs the method for overcurrent, is to be based upon supposition V
cevoltage and collector current I
cthe basis all constant under any condition of corresponding relation curve on.But in reality test, the change of junction temperature is often to V
cevoltage has impact, and existing IGBT over-current detecting method does not consider this impact mostly, causes accurately V to be detected
cevoltage, overcurrent protection arranges inaccurate, and then cannot realize the available protecting to IGBT.
Therefore traditional by detecting V
cejudge the impact that the method for overcurrent have ignored junction temperature factor and brings, easily cause the judgement of overcurrent inaccurate, it is unreliable to cause the protection of IGBT.
Summary of the invention
Over-current protection method for IGBT in prior art is not considered junction temperature factor, is judged inaccurate shortcoming to overcurrent; the object of this invention is to provide a kind of circuit simple; protection act is faster; the method to set up of IGBT over-current protection point more reliably, the over-current protection point that the method obtains considers the change of IGBT junction temperature temperature to colelctor electrode and transmitting voltage across poles V
ceimpact, it is comparatively accurate to judge overcurrent, and that protects when there is overcurrent to IGBT is reliable more in time.
For achieving the above object, the present invention takes following technical scheme:
A kind of method to set up of overcurrent protection point for insulated gate bipolar transistor; its improvements are: described method adopts and IGBT is in cut-off current at different junction temperature temperature all in 2 times of rated current; the junction temperature temperature range of described IGBT is 25 DEG C ~ 150 DEG C, and described method comprises the steps:
(1) the junction temperature temperature choosing IGBT be respectively 25 DEG C, 125 DEG C and 150 DEG C time the relation curve of Vce and Ic, described V
cewith I
crelation curve in;
(2) V when to choose IGBT junction temperature temperature be 25 DEG C
cewith I
crelation curve, determine 2 times of rated current point C, be that basic point makes a vertical line to axis of abscissas with C, vertical line is crossing with axis of abscissas obtains over-current protection point A;
(3) V when being 150 DEG C with the junction temperature temperature of described vertical line and IGBT
cewith I
cthe intersection point of relation curve make a horizontal vertical line to axis of ordinates, horizontal vertical line is crossing with axis of ordinates, can cut-off current value B when the junction temperature temperature drawing IGBT is 150 DEG C;
(4) showing that the junction temperature temperature of IGBT is between 25 DEG C ~ 150 DEG C, can the IGBT current value of safe shutdown be B ~ C;
(5) current peak that in main circuit, IGBT normally works only is less than B value, even if there is overcurrent condition when the junction temperature temperature of IGBT is 150 DEG C, cut-off current is also within 2 times of rated current of IGBT, and shutoff is safe;
(6) IGBT over-current protection point is A.
Another optimal technical scheme of the present invention is: the process that described method realizes IGBT overcurrent protection is on a drive:
(1) according to the settings of over-current protection point, carry out optimum configurations on a drive, draw protection threshold magnitude of voltage V
threshold;
(2) driver powers on, voltage Vce between dynamic Vce testing circuit measuring set electrode and emitter stage;
(3) IGBT judges after opening the T1 time whether Vce voltage exceedes protection threshold voltage;
(4) if Vce is less than protection threshold voltage, illustrate that IGBT is in normal operating conditions, dynamic Vce testing circuit continues to measure Vce;
(5) if Vce is greater than protection threshold voltage, driver detects that overcurrent condition appears in IGBT; After driver detects that overcurrent appears in IGBT, returned rapidly to controller by optical fiber output interface, controller sends locking signal by optical fiber input interface on driver;
(6) after the time delay of Δ T time, the IGBT that overcurrent occurs is turned off, thus achieves the overcurrent protection of IGBT;
(7) again through the time delay of Δ T ' time, the fault return of driver can automatically reset and remove fault-signal, fault-signal automatically remove after IGBT namely can again be triggered.
An optimal technical scheme more of the present invention is: described T1 is less than 20 μ s, and Δ T is less than 200ns, and described Δ T ' is can setting value.
Owing to taking technique scheme, compared with prior art, the beneficial effect that brings of the present invention is as follows:
1, method is simple, practical
The present invention, according to the manufacture craft of IGBT, arranges the collector current I of IGBT
cwithin 2 times of rated current, shutoff is safe;
2, protection act sooner, more reliable
Driver is by optical fiber transmission of signal, and time delay is little;
3, the safety of IGBT is ensured
The method to set up of the over-current protection point that the present invention takes, can make IGBT be in cut-off current under different junction temperature all in 2 times of rated current, guarantee the use safety of IGBT.
Accompanying drawing explanation
Fig. 1 is driver overcurrent protection flow chart
Fig. 2 is the graph of relation of Vce and Ic under different junction temperature condition
Fig. 3 is Vce and the Ic graph of relation of 3300V/1500AIGBT
Fig. 4 is the basic circuit structure figure of driver
Detailed description of the invention
Method of the present invention to be described in detail in conjunction with Figure of description below by way of specific embodiment.
Embodiment 1:
The method to set up of over-current protection point of the present invention is a kind of method to set up based on driver, and the flow chart of the over-current detection protection of driver as shown in Figure 1.Dynamic V on driver
cestart to detect V after voltage detecting circuit powers on
cevoltage, the size judging colelctor electrode and launch between voltage across poles Vce and threshold voltage, if colelctor electrode is less than threshold voltage with transmitting voltage across poles Vce, illustrates that IGBT is in normal operating conditions; If colelctor electrode exceedes threshold voltage with transmitting voltage across poles Vce, then can judge that overcurrent condition appears in IGBT, driver is returned to controller by optical fiber, and locking signal sent out by controller, and IGBT is turned off, thus realizes overcurrent protection object.
Embodiment 2:
According to the manufacturing process of IGBT in the present invention, prove through many experiments, as the collector current I of IGBT
ctime within 2 times of rated current, shutoff is safe; As the collector current I of IGBT
cwithin the scope of 2 times to 4 times rated current, turn off the risk that there is bombing; As the collector current I of IGBT
cduring more than 4 times of rated current, it is also safe for turning off.Therefore, under IGBT will be made when arranging overcurrent protection to be in different junction temperature, cut-off current is all in 2 times of rated current, to guarantee the use safety of IGBT.
IGBT is V at different junction temperature temperature
cevoltage and collector current I
crelation curve as shown in Figure 2, can find out, under different junction temperatures, V
cewith I
ccorresponding relation be different, but V
cewith I
cproportional characteristic is consistent.Under specific collector current Ic, the V of the higher correspondence of junction temperature
celarger.
Embodiment 3:
With two 3300V/1500AIGBT parallel connections, devices function rated current virtual value is 950A, and maximum overload 1.4 times is analyzed for example.The driver adopted is principal and subordinate's driver, is connected between principal and subordinate's driver by Parallel Data line, controls the IGBT used in parallel respectively.
As shown in Figure 3, in figure, curve is the relation curve of this IGBT device Vce and Ic, and abscissa represents conduction pipe pressure drop Vce, ordinate presenting set electrode current Ic.The junction temperature temperature that in figure, three curves represent IGBT be respectively 25 DEG C, 125 DEG C and 150 DEG C time the relation curve of Vce and Ic, can find out, along with the increase of electric current, conduction pipe pressure drop also progressively increases, and Vce and Ic is substantially proportional.The method to set up of over-current protection point is:
(1) in order to ensure that the cut-off current of IGBT under different junction temperature condition is all within 2 times of rated current, in figure 3, with the characteristic curve of Vce and Ic when 25 DEG C for benchmark, 2 times of rated current point 3000A make a vertical line to abscissa, can show that over-current protection point Vce value is probably 3.45V;
(2) this vertical line and 150 DEG C time Vce and Ic characteristic intersection point make a horizontal vertical line to ordinate, horizontal vertical line is crossing with axis of ordinates, can draw the junction temperature of IGBT 150 DEG C time can cut-off current value probably for 1700A;
(3) show that the junction temperature of IGBT is between 25 DEG C ~ 150 DEG C, can single IGBT current value of safe shutdown be 1700 ~ 3000A, two parallel IGBT current values reach 3400 ~ 6000A;
(4) in main circuit, the operating current of IGBT is 950A, consider 1.4 times of overload capacity, the peak value of IGBT operating current is 1885A, be less than two IGBT safe shutdown values in parallel, even if there is overcurrent condition in the junction temperature of IGBT 150 DEG C time, cut-off current is also within 2 times of rated current, and it is safe for therefore turning off.
Embodiment 4:
Over-current protection point method to set up of the present invention, is applicable to following drive circuit, is realized the overcurrent protection of IGBT by driver.Driver basic circuit structure as shown in Figure 4, this master driver by power input interface for driver provides+15V working power; Optical fiber input/output interface is the interface between driver and controller, control signal is issued to driver by optical fiber input interface by controller, control the opening of IGBT device, turn off, status signal is returned to controller by optical fiber output interface by driver again, to grasp the current duty of IGBT device; Driver output drive signal directly receives IGBT device control end; Connected by Parallel Data line between principal and subordinate's driver, control the IGBT used in parallel respectively.
Dynamic Vce testing circuit is arranged on master driver, settings 3.45V according to over-current protection point carries out relevant parameter setting on a drive, draw protection threshold magnitude of voltage 3.45V, voltage Vce between the colelctor electrode of the electric circuit inspection IGBT in driver and emitter stage, Vce detects and starts after the response time escaping IGBT, when judging the threshold voltage value that Vce is greater than set by protection, driver just can detect that overcurrent condition has appearred in IGBT, return to controller by optical fiber simultaneously rapidly, controller sends locking signal, after the time delay of Δ T time, Δ T value is less than 200ns, the IGBT that overcurrent occurs is turned off, thus achieve the overcurrent protection of IGBT, again through time delay after a while, the fault return of drive plate can automatically reset and remove fault-signal, fault-signal automatically remove after IGBT namely can again be triggered.Wherein IGBT can be set by the time delays again triggered, and selects optimum value as the case may be.
Therefore, over-current protection point is arranged on below 3.45V, and under different junction temperature condition, overcurrent condition occurs IGBT, and driver can turn off the IGBT being in over-current state fast, reliably, guarantees the use safety of IGBT.
According to specific exemplary embodiment, invention has been described herein.It will be apparent under not departing from the scope of the present invention, carrying out suitable replacement to one skilled in the art or revise.Exemplary embodiment is only illustrative, instead of the restriction to scope of the present invention, and scope of the present invention is defined by appended claim.
Claims (3)
1. the method to set up of an overcurrent protection point for insulated gate bipolar transistor; it is characterized in that: described method adopts and IGBT is in cut-off current at different junction temperature temperature all in 2 times of rated current; the junction temperature temperature range of described IGBT is 25 DEG C ~ 150 DEG C, and described method comprises the steps:
(1) the junction temperature temperature choosing IGBT be respectively 25 DEG C, 125 DEG C and 150 DEG C time the relation curve of Vce and Ic;
(2) in the relation curve of described Vce and Ic, the relation curve of Vce and Ic when to choose IGBT junction temperature temperature be 25 DEG C, determine 2 times of rated current point C, be that basic point makes a vertical line to axis of abscissas with C, vertical line is crossing with axis of abscissas obtains over-current protection point A;
(3) when being 150 DEG C with the junction temperature temperature of described vertical line and IGBT, the intersection point of the relation curve of Vce and Ic makes a horizontal vertical line to axis of ordinates, horizontal vertical line is crossing with axis of ordinates, can cut-off current value B when the junction temperature temperature drawing IGBT is 150 DEG C;
(4) showing that the junction temperature temperature of IGBT is between 25 DEG C ~ 150 DEG C, can the IGBT current value of safe shutdown be the load current value of B ~ 2 times;
(5) current peak that in main circuit, IGBT normally works only is less than B value, even if there is overcurrent condition when the junction temperature temperature of IGBT is 150 DEG C, cut-off current is also within 2 times of rated current of IGBT, and shutoff is safe;
(6) IGBT over-current protection point is A.
2. the method to set up of a kind of overcurrent protection point for insulated gate bipolar transistor as claimed in claim 1, is characterized in that: the process that described method realizes IGBT overcurrent protection is on a drive:
(1) according to the settings of over-current protection point, carry out optimum configurations on a drive, draw protection threshold magnitude of voltage Vthreshold;
(2) driver powers on, voltage Vce between dynamic Vce testing circuit measuring set electrode and emitter stage;
(3) IGBT judges after opening the T1 time whether Vce voltage exceedes protection threshold voltage;
(4) if Vce is less than protection threshold voltage, illustrate that IGBT is in normal operating conditions, dynamic Vce testing circuit continues to measure Vce;
(5) if Vce is greater than protection threshold voltage, driver detects that overcurrent condition appears in IGBT; After driver detects that overcurrent appears in IGBT, returned rapidly to controller by optical fiber output interface, controller sends locking signal by optical fiber input interface on driver;
(6) after the time delay of △ T time, the IGBT that overcurrent occurs is turned off, thus achieves the overcurrent protection of IGBT;
(7) again through the time delay of △ T ' time, the fault return of driver can automatically reset and remove fault-signal, fault-signal automatically remove after IGBT namely can again be triggered.
3. the method to set up of a kind of overcurrent protection point for insulated gate bipolar transistor as claimed in claim 2, is characterized in that: described T1 is less than 20 μ s, and △ T is less than 200ns, and described △ T ' is can setting value.
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| CN201110030882.2A CN102082418B (en) | 2011-01-28 | 2011-01-28 | Method for setting overcurrent protection point for insulated gate bipolar transistor |
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|---|---|---|---|
| CN201110030882.2A CN102082418B (en) | 2011-01-28 | 2011-01-28 | Method for setting overcurrent protection point for insulated gate bipolar transistor |
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| CN103036214B (en) * | 2011-09-29 | 2015-07-08 | 台达电子企业管理（上海）有限公司 | Power switch series circuit and control method thereof |
| EP2712084B1 (en) * | 2012-09-20 | 2019-11-06 | Infineon Technologies AG | Semiconductor device including short-circuit protection with a variable threshold |
| CN105098730A (en) * | 2014-04-18 | 2015-11-25 | 南京南瑞继保电气有限公司 | Device and method for detecting overcurrent of IGBT (insulated gate bipolar transistor) |
| DE112017004119T5 (en) * | 2016-08-17 | 2019-05-09 | Denso Corporation | Transistor drive circuit and motor drive control device |
| CN108072819B (en) * | 2016-11-10 | 2021-07-30 | 西门子公司 | IGBT failure detection method and device |
| CN108957271B (en) * | 2017-05-26 | 2021-05-18 | 许继集团有限公司 | IGBT driving overcurrent fault monitoring method and device |
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| CN201533295U (en) * | 2009-10-21 | 2010-07-21 | 深圳市麦格米特驱动技术有限公司 | IGBT drive and protection circuit |
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Inventor after: Wang Xuan Inventor after: Deng Zhanfeng Inventor after: The inventor has waived the right to be mentioned Inventor after: Wang Ke Inventor after: Han Tianxu Inventor after: Wu Shouyuan Inventor after: Yu Xufeng Inventor after: Zou Jian Inventor before: Wang Xuan Inventor before: Deng Zhanfeng Inventor before: The inventor has waived the right to be mentioned Inventor before: Han Tianxu Inventor before: Wu Shouyuan Inventor before: Yu Xufeng Inventor before: Zou Jian |
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