CN206712450U - A kind of insulated gate bipolar transistor protection circuit - Google Patents
A kind of insulated gate bipolar transistor protection circuit Download PDFInfo
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- CN206712450U CN206712450U CN201720448031.2U CN201720448031U CN206712450U CN 206712450 U CN206712450 U CN 206712450U CN 201720448031 U CN201720448031 U CN 201720448031U CN 206712450 U CN206712450 U CN 206712450U
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Abstract
The utility model discloses a kind of insulated gate bipolar transistor protection circuit, the circuit includes：First partial pressure unit, the second partial pressure unit, the first comparing unit and the second comparing unit；First partial pressure unit is connected between the insulated gate bipolar transistor and first comparing unit, and second partial pressure unit is connected between first comparing unit and second comparing unit；First comparing unit receives the first branch pressure voltage of first partial pressure unit and exports the first level signal to control second partial pressure unit to export the second branch pressure voltage, and second comparing unit receives second branch pressure voltage and exports second electrical level signal and IGBT is protected with triggering fault detection system.The circuit not only increases IGBT short-circuit predetermined threshold value voltage adjustable range, and overcomes short-circuit protection time uncontrollable problem under electric resistance partial pressure scheme, realizes the reliably protecting IGBT in 10uS.
Description
Technical field
It the utility model is related to field of power electronics, more particularly to a kind of insulated gate bipolar transistor protection circuit.
Background technology
Insulated gate bipolar transistor (IGBT, Insulated Gate BipolarTransistor) is Frequency Drive production
The core devices of product.Due to low driving power, the advantages of high current carrying density, IGBT is in low-power consumption, high-power applications occasion
With the incomparable advantage of other devices.It is simultaneously higher to operating environment requirements the shortcomings that IGBT, the failure such as short circuit can be made
Into IGBT damage, therefore IGBT protection circuit continues to develop along with the change of IGBT techniques, as the IGBT in Fig. 1 protects electricity
Road, the protection circuit judge whether IGBT is short-circuit by detecting the voltage at electric capacity C1 both ends.When IGBT is turned off, electric capacity C1 both ends
Voltage be less than short-circuit threshold value voltage always；When IGBT is turned on, the voltage at electric capacity C1 both ends is equal to TVS pipe (transient state suppression two
Pole pipe) Z1, Z2 and IGBT three's conduction voltage drop sum, when the voltage at electric capacity C1 both ends is more than the short-circuit threshold value voltage,
Locking pulse simultaneously quotes fault-signal and thereby protects the IGBT.
But still there is many shortcomings, such as the IGBT protection circuit short circuit threshold in Fig. 1 in existing IGBT protection circuit
Threshold voltage adjustable range is limited, underaction.Although the protection circuit in Fig. 1 can improve short circuit by increasing TVS quantity
Threshold voltage, but TVS is more, reverse recovery time is longer, ultimately results in the short-circuit protection time increase to IGBT, easily draws
Play IGBT demolitions.Meanwhile IGBT module is during turning on and off under high pressure for work, between emitter and collector on voltage
Rise and decline is slower, short trouble is easily reported by mistake, so as to influence the normal work of circuit.
Utility model content
Embodiment of the present utility model provides a kind of insulated gate bipolar transistor protection circuit, it is intended to solves existing
Insulated gate bipolar transistor protection circuit has that short-circuit predetermined threshold value voltage adjustable range is limited and easy wrong report short trouble etc.
Problem.
The utility model provides a kind of insulated gate bipolar transistor protection circuit, and the protection circuit includes：First point
Press unit, the second partial pressure unit, the first comparing unit and the second comparing unit；First partial pressure unit is connected to the insulation
Between grid bipolar transistor and first comparing unit, second partial pressure unit is connected to first comparing unit and institute
State between the second comparing unit；
It is characterised in that it includes：First partial pressure unit, the second partial pressure unit, the first comparing unit and the second comparing unit；
First partial pressure unit is connected between the insulated gate bipolar crystal and first comparing unit, second partial pressure
Unit is connected between first comparing unit and second comparing unit；
First partial pressure unit, for obtain the insulated gate bipolar transistor collection emitter voltage and partial pressure after export
One branch pressure voltage；
First comparing unit, first branch pressure voltage is received, it is defeated by first branch pressure voltage compared with reference voltage
Go out the first level signal；
Second partial pressure unit, the second branch pressure voltage of output is controlled according to first level signal；
Second comparing unit, second branch pressure voltage is received, by second branch pressure voltage and the reference voltage ratio
Compared with exporting second electrical level signal, the second electrical level signal is used for whether characterize the insulated gate bipolar transistor short-circuit..
In insulated gate bipolar transistor protection circuit of the present utility model, first comparing unit includes the first ratio
Compared with device, second comparing unit includes the second comparator；
Collector and emitter of first partial pressure unit respectively with the insulated gate bipolar transistor is connected, described
Second partial pressure unit is connected to working power；
The in-phase end of the first comparator is connected with the dividing point of first partial pressure unit, and end of oppisite phase, which is used to receive, joins
Voltage is examined, output end is connected with second partial pressure unit；
The end of oppisite phase of second comparator is connected with the dividing point of second partial pressure unit, and in-phase end is used to receive institute
Reference voltage is stated, output end is used to export the second electrical level signal.
In insulated gate bipolar transistor protection circuit of the present utility model, second partial pressure unit includes the first electricity
Resistance, the first electric capacity, second resistance, 3rd resistor and switch control unit, wherein, the switch control unit is used for according to
The gate leve voltage of insulated gate bipolar transistor performs on or off；
One end of the first resistor is connected by the second resistance with the working power, and the other end is opened by described
Control unit ground connection is closed, wherein, the connecting node of the first resistor and the second resistance is second partial pressure unit
Dividing point；One end of first electric capacity is connected to the dividing point of second partial pressure unit, other end ground connection；3rd electricity
One end of resistance is connected to the dividing point of second partial pressure unit, and the other end is connected with the output end of the first comparator.
In insulated gate bipolar transistor protection circuit of the present utility model, first partial pressure unit includes multiple strings
The resistance of connection, the dividing point of first partial pressure unit are formed in the multiple series resistance between any two resistance.
In insulated gate bipolar transistor protection circuit of the present utility model, the dividing point position of first partial pressure unit
In the weak-feedback side of transmission line for the bleeder circuit that the resistance of the multiple series connection forms.
In insulated gate bipolar transistor protection circuit of the present utility model, the resistance of the multiple series connection can for resistance
Adjust resistance.
In insulated gate bipolar transistor protection circuit of the present utility model, first partial pressure unit includes series connection
4th resistance, the 5th resistance, the 6th resistance, the 7th resistance and the 8th resistance, wherein the 4th resistance is double with the insulated gate
The colelctor electrode of polar form crystal is connected, and the 8th resistance is connected with the emitter stage of the insulated gate bipolar crystal, and described first
The dividing point of partial pressure unit is between the 6th resistance and the 7th resistance.
In insulated gate bipolar transistor protection circuit of the present utility model, the protection circuit also includes：With reference to electricity
Pressure provides unit, wherein, the reference voltage, which provides unit, includes the 9th resistance, Transient Suppression Diode and the second electric capacity；
Second electric capacity and the transient voltage suppressor paralleling；The plus earth of the Transient Suppression Diode, bear
Pole is connected by the 9th resistance with the working power；The negative pole of the Transient Suppression Diode is connected to described the simultaneously
The in-phase end of the end of oppisite phase of one comparator and second comparator, for the first comparator and the offer of the second comparator
Reference voltage.
In insulated gate bipolar transistor protection circuit of the present utility model, the protection circuit also includes the one or two pole
Pipe；The positive pole of first diode is connected with the in-phase end of the first comparator, and negative pole is connected with the working power.
In insulated gate bipolar transistor protection circuit of the present utility model, the switch control unit includes：First
Triode, the second triode, the tenth resistance, the 11st resistance, the 12nd resistance, the 13rd resistance and the second diode；
The colelctor electrode of first triode is connected with the first resistor, grounded emitter, base stage and the described tenth electricity
One end connection of resistance；The other end of tenth resistance is connected by the 11st resistance with the working power；Described 2nd 3
The colelctor electrode of pole pipe is connected between the tenth resistance and the 11st resistance, grounded emitter, base stage and the described 12nd electricity
One end connection of resistance；The other end of 12nd resistance receives gate leve voltage by the 13rd resistance；Second diode
Positive pole be connected with the emitter stage of second triode, negative pole is connected between the 12nd resistance and the 13rd resistance.
The insulated gate bipolar transistor protection circuit that embodiment of the present utility model provides passes through the first branch pressure voltage pair
Voltage carries out partial pressure monitoring between the collector and emitter of insulated gate bipolar transistor, when the of first partial pressure unit
When one branch pressure voltage is higher than short-circuit threshold value voltage, the first comparator exports the first level according to first branch pressure voltage and believed
Number, second partial pressure unit exports the second branch pressure voltage according to first level signal, and second comparing unit receives
Second branch pressure voltage simultaneously exports second electrical level signal, and the second electrical level signal is used to characterize the insulated gate bipolar crystalline substance
Whether body pipe is short-circuit, and fault detection system is triggered in the insulated gate bipolar transistor short circuit to block driving pulse.Tool
Body, the second electrical level signal can be low level signal, and the low level signal is locked absolutely for triggering fault detection system
The drive circuit of edge grid bipolar transistor is realized double to the insulated gate with closing the insulated gate bipolar transistor
Bipolar transistor is protected.Wherein, the first bleeder circuit can carry out different partial pressures according to actual, therefore can improve insulation
The short-circuit predetermined threshold value voltage adjustable range of grid bipolar transistor；First comparing unit has buffer action, solves resistance
Short-circuit protection time uncontrollable problem under partial pressure scheme, therefore insulated gate bipolar transistor can be overcome to be operated in high voltage
In the case of there are problems that easily reporting short trouble by mistake, and then realize 10us reliably protecting insulated gate bipolar transistors.
Brief description of the drawings
In order to illustrate more clearly of the utility model embodiment technical scheme, make required in being described below to embodiment
Accompanying drawing is briefly described, it should be apparent that, drawings in the following description are some embodiments of the utility model, for
For those of ordinary skill in the art, on the premise of not paying creative work, other can also be obtained according to these accompanying drawings
Accompanying drawing.
Fig. 1 is a kind of structural representation of existing insulated gate bipolar transistor protection circuit；
Fig. 2 is a kind of structural representation for insulated gate bipolar transistor protection circuit that the utility model embodiment provides
Figure；
Fig. 3 is a kind of structural representation for insulated gate bipolar transistor protection circuit that the utility model embodiment provides
Figure；
Fig. 4 is a kind of structural representation for insulated gate bipolar transistor protection circuit that the utility model embodiment provides
Figure；
Fig. 5 is a kind of structural representation for insulated gate bipolar transistor protection circuit that the utility model embodiment provides
Figure.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the embodiment of the utility model is carried out
Clearly and completely describe, it is clear that described embodiment is the utility model part of the embodiment, rather than whole implementation
Example.Based on the embodiment in the utility model, those of ordinary skill in the art are obtained under the premise of creative work is not made
The every other embodiment obtained, belong to the scope of the utility model protection.
It should be appreciated that ought be in this specification and in the appended claims in use, term " comprising " and "comprising" instruction
The presence of described feature, entirety, element and/or component, but it is not precluded from one or more of the other feature, entirety, element, group
The presence or addition of part and/or its set.
Referring to Fig. 2, Fig. 2 is a kind of insulated gate bipolar transistor protection circuit that the utility model embodiment provides
Structural representation.As shown in Fig. 2 the insulated gate bipolar transistor protection circuit includes：First partial pressure unit 11, first are compared
Unit 12, the second partial pressure unit 13 and the second comparing unit 14；It is brilliant that first partial pressure unit 11 is connected to the insulated gate bipolar
Between body pipe and the first comparing unit 12, the second partial pressure unit 13 be connected to the first comparing unit 12 and the second comparing unit 14 it
Between, the output end of the second comparing unit 14 is used to export the signal that can reflect the insulated gate bipolar transistor short circuit, than
Such as, the output end of second comparing unit 14 is connected with the drive circuit of the insulated gate bipolar transistor, for by defeated
Go out low and high level to drive or the locked drive circuit.
Wherein, insulated gate bipolar transistor short circuit includes phase fault and shoot through, and the phase fault refers to
Export three-phase and appoint line to line fault；It is simultaneously open-minded with bridge above and below phase, it is shoot through.First partial pressure unit 11 is described exhausted for obtaining
Export the first branch pressure voltage after the collection emitter voltage of edge grid bipolar transistor and partial pressure, when occur any one it is short-circuit when, the
The voltage (the first branch pressure voltage) of one partial pressure unit 11 will increase, and the first comparing unit 12 receives the of the first partial pressure unit 11
One branch pressure voltage, and first branch pressure voltage and reference voltage are compared and export the first level signal.First electricity
Ordinary mail number is used to control the second partial pressure unit 13 to export the second branch pressure voltage, and the second comparing unit 14 receives the second partial pressure electricity
After pressure and second electrical level signal is exported, whether the second electrical level signal is short for characterizing the insulated gate bipolar transistor
Road.When the insulated gate bipolar transistor short circuit, fault detection system is triggered to block driving pulse to the insulated gate
Bipolar transistor is protected, for example second electrical level signal is low level signal, and low level signal represents that the insulated gate is double
Bipolar transistor is short-circuit condition, it is understood that is low level signal triggering fault detection system (can be host computer) lock
The drive circuit of the dead insulated gate bipolar transistor is realized to the insulation with closing the insulated gate bipolar transistor
The protection of grid bipolar transistor.
It should be noted that the fault detection system includes main control unit, the main control unit is used to control the insulated gate
The drive circuit of bipolar transistor is to be turned on and off the insulated gate bipolar transistor.
Wherein, the first bleeder circuit can carry out different partial pressures according to actual conditions, therefore can improve insulated gate
The short-circuit predetermined threshold value voltage adjustable range of bipolar transistor.First comparing unit has buffer action, therefore solves electricity
Short-circuit protection time uncontrollable problem under partial pressure scheme is hindered, realizes quick protection insulated gate bipolar transistor, during protection
Between can control in 10us.
Referring to Fig. 3, Fig. 3 is a kind of insulated gate bipolar transistor protection circuit that the utility model embodiment provides
Structural representation.Specifically, as shown in figure 3, the first comparing unit 12 includes first comparator U1_A, the second comparing unit 14 wraps
Include the second comparator U1_B.First partial pressure unit 11 connects with the colelctor electrode C and emitter E of the insulated gate bipolar crystal respectively
Connect.Second partial pressure unit 13 is connected to working power, for carrying out partial pressure (the second branch pressure voltage) to the working power with defeated
Go out to the second comparing unit 14.
Specifically, first comparator U1_A in-phase end is connected with the dividing point of the first partial pressure unit 11, first comparator
U1_A end of oppisite phase is used to receive reference voltage, first comparator U1_A output end and the second partial pressure unit 13 be connected to
Second partial pressure unit 13 exports the first level signal, wherein the first level signal is high level signal or low level signal, works as institute
When stating the first branch pressure voltage and being higher than the reference voltage, first comparator U1_A exports high level to the second partial pressure unit；Work as institute
When stating the first branch pressure voltage and being less than the reference voltage, first comparator U1_A exports low level to the second partial pressure unit.
Second comparator U1_B end of oppisite phase is connected with the dividing point of the second partial pressure unit 13, and the second comparator U1_B's is same
Phase end receives the reference voltage, and the second comparator U1_B output end is used to export the second electrical level signal, wherein second
Level signal is also high level signal or low level signal, and the second electrical level signal is used to trigger the fault detection system control
Make the on or off of the IGBT.
Specifically, the second partial pressure unit 13 includes first resistor R1, the first electric capacity C1, second resistance R2,3rd resistor R3
With switch control unit 130, wherein, switch control unit 130 is used for according to the gate leve of insulated gate bipolar transistor electricity
Vg is pressed to perform on or off.First resistor R1 one end is connected by second resistance R2 with working power VCC, first resistor R1
The other end be grounded by switch control unit 130, wherein, first resistor R1 and second resistance R2 connecting node are second point
Press the dividing point of unit 13.First electric capacity C1 one end is connected to the dividing point of the second partial pressure unit 13, and the first electric capacity C1's is another
One end is grounded.3rd resistor R3 one end is connected to the dividing point of the second partial pressure unit 13, the 3rd resistor R3 other end and
One comparator U1_A output end connection.Wherein, first comparator has isolation voltage effect, really utilizes working power
Partial pressure realizes what IGBT was protected, therefore solves short-circuit protection time uncontrollable problem under electric resistance partial pressure scheme.
Meanwhile second comparator partial pressure is carried out to operating voltage by the second partial pressure unit 13 after enter with the reference voltage
Row compares, and improves the short-circuit detecting time, therefore can be with the first comparing unit 11 and the mating reaction of the second partial pressure unit 13
Effectively ensure that the short-circuit protection time is less than 10us.In embodiment of the present utility model, the first partial pressure unit 11 includes multiple
The resistance of series connection, the dividing point of the first partial pressure unit 11 are formed in the multiple series resistance between any two resistance, institute
Stating multiple series resistances can be depending on actual conditions, therefore adds the short-circuit predetermined threshold value electricity of the short-circuit protection circuit
Press adjustable range.Specifically, the dividing point of the first partial pressure unit 11 is located at the bleeder circuit of the resistance composition of the multiple series connection
Weak-feedback side of transmission line, realize it is strong and weak be electrically isolated, and then protect the electronic component of weak-feedback side of transmission line without damage, enhance the protection circuit
Reliability.In addition, the resistance of the multiple series connection can also be resistance adjustable resistance, and it is convenient after circuit design is complete, change each
The resistance of resistance, to cause the short-circuit predetermined threshold value voltage adjustable range of designed protection circuit adjustable.
The operation principle of insulated gate bipolar transistor protection circuit in Fig. 3 is as follows：
When gate leve voltage Vg is high level, the insulated gate bipolar transistor ON operation, switch control unit 130
Disconnect.If the insulated gate bipolar transistor short circuit, the first branch pressure voltage rise on the dividing point of the first partial pressure unit 11
And it is more than reference voltage, first comparator U1_A exports high level signal to block second resistance R2 to be connect by 3rd resistor R3
Ground.The working power VCC is charged by second resistance R2 to the first electric capacity C1 so that the of the dividing point of the second partial pressure unit 13
Two branch pressure voltages are higher than the reference voltage.Now the second comparator U1_B exports low level signal to the insulated gate bipolar
The drive circuit of transistor, for the locked drive circuit to turn off the insulated gate bipolar transistor, and then realize
To the insulated gate bipolar transistor short-circuit protection.
If the not short-circuit normal work of the insulated gate bipolar transistor, first point on the dividing point of the first partial pressure unit 11
Piezoelectricity pressure is less than the reference voltage, and first comparator U1_A exports low level signal so that second resistance R2 passes through 3rd resistor
R3 is grounded.In design, second resistance R2 and 3rd resistor R3 resistances are adjusted so that the voltage of the second bleeder circuit dividing point is low
In the reference voltage.Now the second comparator U1_B exports driving of the high level signal to the insulated gate bipolar transistor
Circuit, then will not the locked drive circuit, therefore short-circuit protection will not be triggered.
When gate leve voltage Vg is low level, the insulated gate bipolar transistor shut-off is stopped, and switch control is single
Member 130 closes.The branch pressure voltage that second comparator U1_B end of oppisite phase receives the second partial pressure unit 13 is the first electric capacity C1 both ends
Voltage.In design, by the resistance for calculating first resistor R1 and second resistance R2 so that now point of the second partial pressure unit 13
Piezoelectricity pressure is less than the reference voltage, and the second comparator U1_B exports high level signal to the insulated gate bipolar transistor
Drive circuit, then will not the locked drive circuit, therefore short-circuit protection will not be triggered.
Referring to Fig. 4, Fig. 4 is a kind of insulated gate bipolar transistor protection circuit that the utility model embodiment provides
Structural representation.As shown in figure 4, in the edge grid bipolar transistor tube protective circuit, the first partial pressure unit 11 includes series connection
4th resistance R4, the 5th resistance R5, the 6th resistance R6, the 7th resistance R7 and the 8th resistance R8, wherein the 4th resistance R4 with it is described
The colelctor electrode C of insulated gate bipolar transistor is connected, the 8th resistance R8 and the insulated gate bipolar crystal emitter E phase
Even, the dividing point of the first partial pressure unit 11 is between the 6th resistance R6 and the 7th resistance R7.Specifically, the insulated gate bipolar
Transistor npn npn protection circuit also includes：Reference voltage provides unit 15, wherein, reference voltage, which provides unit 15, includes the 9th resistance
R9, Transient Suppression Diode Z1 and the second electric capacity C2.Second electric capacity C2 is in parallel with Transient Suppression Diode Z1；Transient state suppresses two poles
Pipe Z1 plus earth, Transient Suppression Diode Z1 negative pole are connected by the 9th resistance R9 with the working power VCC；Transient state
The negative pole for suppressing diode Z1 is connected to first comparator U1_A end of oppisite phase and the second comparator U1_B in-phase end simultaneously, uses
Reference voltage is provided in giving first comparator U1_A and the second comparator U1_B.Specifically, Transient Suppression Diode Z1 is chosen as
9.1V, the reference voltage are also 9.1V, and the working power is 15V or other values.
In embodiment of the present utility model, the insulated gate bipolar transistor protection circuit also includes the first diode
D1, the first diode D1 are clamp diode；First diode D1 positive pole is connected with first comparator U1_A in-phase end, the
One diode D1 negative pole is connected with the working power, wherein the working power includes positive supply and negative supply, this implementation
In using positive supply.First diode D1 is used to protect first comparator U1_A, prevents that first comparator U1_A from being hit
Wear or into inelastic region.
In embodiment of the present utility model, specifically as shown in figure 5, switch control unit 130 includes：First triode
Q1, the second triode Q2, the tenth resistance R10, the 11st resistance R11, the 12nd resistance R12, the 13rd resistance R13 and the two or two
Pole pipe D2.First triode Q1 colelctor electrode is connected with first resistor R1, the first triode Q1 grounded emitter, the one or three pole
Pipe Q1 base stage is connected with the tenth resistance R10 one end.The tenth resistance R10 other end by the 11st resistance R11 with it is described
Working power connects.Second triode Q3 colelctor electrode is connected between the tenth resistance R10 and the 11st resistance R11, and the two or three
Pole pipe Q3 grounded emitter, the second triode Q3 base stage are connected with the 12nd resistance R12 one end.12nd resistance R12
The other end pass through the 13rd resistance R13 connection gate leve voltages Vg.The hair of second diode D2 positive pole and the second triode Q2
Emitter-base bandgap grading is connected, and the second diode D2 negative pole is connected between the 12nd resistance R12 and the 13rd resistance R13.Work as gate voltage
When Vg is low level, the second triode Q2 disconnects, and the second triode Q2 causes the first triode Q1 to turn on after disconnecting；When gate pole electricity
When pressure Vg is high level, the second triode Q2 conductings, the first triode Q1 is caused to disconnect after the second triode Q2 conductings, so as in fact
Existing switch control unit 130 is according to gate voltage on or off.In addition, using optocoupler scheme relative to existing Vce detections, it is
Meet safety and high short-circuit threshold value voltage request, the cost for improving optocoupler is very high.And the circuit of above-described embodiment can be seen
Go out, insulated gate bipolar transistor protection circuit provided by the utility model mainly by simple resistance, electric capacity and comparator
Composition, therefore saved cost compared to existing IGBT protection circuit.
For the operation principle of the insulated gate bipolar transistor protection circuit in Fig. 4 and Fig. 5, do not do retouch in detail herein
State, the operation principle for the insulated gate bipolar transistor protection circuit being specifically referred in above-described embodiment.In Fig. 4 and Fig. 5
Protection circuit simply provide unit to the first partial pressure unit, switch control unit and reference voltage and be discussed in detail, but simultaneously
Its physical circuit is not limited.
It is described above, only specific embodiment of the present utility model, but the scope of protection of the utility model is not limited to
In this, any one skilled in the art can readily occur in various in the technical scope that the utility model discloses
Equivalent modifications or substitutions, these modifications or substitutions should all cover within the scope of protection of the utility model.Therefore, this practicality
New protection domain should be defined by scope of the claims.
Claims (10)
- A kind of 1. insulated gate bipolar transistor protection circuit, it is characterised in that including：First partial pressure unit, the second partial pressure list Member, the first comparing unit and the second comparing unit；First partial pressure unit is connected to the insulated gate bipolar crystal and institute Between stating the first comparing unit, second partial pressure unit be connected to first comparing unit and second comparing unit it Between；First partial pressure unit, for obtain the insulated gate bipolar transistor collection emitter voltage and partial pressure after export first point Piezoelectricity pressure；First comparing unit, first branch pressure voltage is received, by first branch pressure voltage with reference voltage compared with, export the One level signal；Second partial pressure unit, the second branch pressure voltage of output is controlled according to first level signal；Second comparing unit, second branch pressure voltage is received, it is defeated by second branch pressure voltage compared with the reference voltage Go out second electrical level signal, whether the second electrical level signal is short-circuit for characterizing the insulated gate bipolar transistor.
- 2. insulated gate bipolar transistor protection circuit according to claim 1, it is characterised in that described first is relatively more single Member includes first comparator, and second comparing unit includes the second comparator；Collector and emitter of first partial pressure unit respectively with the insulated gate bipolar transistor is connected, and described second Partial pressure unit is connected to working power；The in-phase end of the first comparator is connected with the dividing point of first partial pressure unit, and end of oppisite phase is used to receive with reference to electricity Pressure, output end are connected with second partial pressure unit；The end of oppisite phase of second comparator is connected with the dividing point of second partial pressure unit, and in-phase end is used to receive the ginseng Voltage is examined, output end is used to export the second electrical level signal.
- 3. insulated gate bipolar transistor protection circuit according to claim 2, it is characterised in that the second partial pressure list Member includes first resistor, the first electric capacity, second resistance, 3rd resistor and switch control unit, wherein, the switch control unit For performing on or off according to the gate leve voltage of the insulated gate bipolar transistor；One end of the first resistor is connected by the second resistance with the working power, and the other end is controlled by the switch Unit ground connection processed, wherein, the connecting node of the first resistor and the second resistance is the partial pressure of second partial pressure unit Point；One end of first electric capacity is connected to the dividing point of second partial pressure unit, other end ground connection；The 3rd resistor One end is connected to the dividing point of second partial pressure unit, and the other end is connected with the output end of the first comparator.
- 4. according to the insulated gate bipolar transistor protection circuit described in claim any one of 1-3, it is characterised in that described One partial pressure unit includes the resistance of multiple series connection, and the dividing point of first partial pressure unit is formed in the multiple series resistance Between any two resistance.
- 5. insulated gate bipolar transistor protection circuit according to claim 4, it is characterised in that the first partial pressure list The dividing point of member is located at the weak-feedback side of transmission line of the bleeder circuit of the resistance composition of the multiple series connection.
- 6. insulated gate bipolar transistor protection circuit according to claim 4, it is characterised in that the multiple series connection Resistance is resistance adjustable resistance.
- 7. insulated gate bipolar transistor protection circuit according to claim 4, it is characterised in that the first partial pressure list Member include series connection the 4th resistance, the 5th resistance, the 6th resistance, the 7th resistance and the 8th resistance, wherein the 4th resistance with The colelctor electrode of the insulated gate bipolar crystal is connected, the emitter stage phase of the 8th resistance and the insulated gate bipolar crystal Even, the dividing point of first partial pressure unit is between the 6th resistance and the 7th resistance.
- 8. insulated gate bipolar transistor protection circuit according to claim 7, it is characterised in that the protection circuit is also Including：Reference voltage provides unit, wherein, the reference voltage provide unit include the 9th resistance, Transient Suppression Diode and Second electric capacity；Second electric capacity and the transient voltage suppressor paralleling；The plus earth of the Transient Suppression Diode, negative pole lead to The 9th resistance is crossed to be connected with the working power；The negative pole of the Transient Suppression Diode is connected to first ratio simultaneously Compared with the end of oppisite phase of device and the in-phase end of second comparator, for providing reference to the first comparator and the second comparator Voltage.
- 9. insulated gate bipolar transistor protection circuit according to claim 8, it is characterised in that the protection circuit is also Including the first diode；The positive pole of first diode is connected with the in-phase end of the first comparator, negative pole and the work Make power supply connection.
- 10. insulated gate bipolar transistor protection circuit according to claim 9, it is characterised in that the switch control Unit includes：First triode, the second triode, the tenth resistance, the 11st resistance, the 12nd resistance, the 13rd resistance and Two diodes；The colelctor electrode of first triode is connected with the first resistor, grounded emitter, base stage and the tenth resistance One end connects；The other end of tenth resistance is connected by the 11st resistance with the working power；Second triode Colelctor electrode be connected between the tenth resistance and the 11st resistance, grounded emitter, base stage and the 12nd resistance One end connects；The other end of 12nd resistance receives gate leve voltage by the 13rd resistance；Second diode is just Pole is connected with the emitter stage of second triode, and negative pole is connected between the 12nd resistance and the 13rd resistance.
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| CN201720448031.2U CN206712450U (en) | 2017-04-26 | 2017-04-26 | A kind of insulated gate bipolar transistor protection circuit |
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| CN201720448031.2U CN206712450U (en) | 2017-04-26 | 2017-04-26 | A kind of insulated gate bipolar transistor protection circuit |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109599845A (en) * | 2018-11-28 | 2019-04-09 | 海信家电集团股份有限公司 | A kind of protection circuit, upper bridge driving chip and IPM module |
| CN110504659A (en) * | 2019-08-21 | 2019-11-26 | 中车永济电机有限公司 | IGBT drives short-circuit protection detection circuit |
| CN111707922A (en) * | 2020-07-28 | 2020-09-25 | 哈尔滨工业大学 | System and method for testing pulse-triggered deep energy level transient spectrum |
-
2017
- 2017-04-26 CN CN201720448031.2U patent/CN206712450U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109599845A (en) * | 2018-11-28 | 2019-04-09 | 海信家电集团股份有限公司 | A kind of protection circuit, upper bridge driving chip and IPM module |
| CN110504659A (en) * | 2019-08-21 | 2019-11-26 | 中车永济电机有限公司 | IGBT drives short-circuit protection detection circuit |
| CN110504659B (en) * | 2019-08-21 | 2021-06-22 | 中车永济电机有限公司 | IGBT drive short-circuit protection detection circuit |
| CN111707922A (en) * | 2020-07-28 | 2020-09-25 | 哈尔滨工业大学 | System and method for testing pulse-triggered deep energy level transient spectrum |
| CN111707922B (en) * | 2020-07-28 | 2023-03-14 | 哈尔滨工业大学 | System and method for testing pulse-triggered deep energy level transient spectrum |
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