CN110504659B - IGBT drive short-circuit protection detection circuit - Google Patents
IGBT drive short-circuit protection detection circuit Download PDFInfo
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- CN110504659B CN110504659B CN201910773038.5A CN201910773038A CN110504659B CN 110504659 B CN110504659 B CN 110504659B CN 201910773038 A CN201910773038 A CN 201910773038A CN 110504659 B CN110504659 B CN 110504659B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H1/00—Details of emergency protective circuit arrangements
- H02H1/0007—Details of emergency protective circuit arrangements concerning the detecting means
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
- H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
- H02H7/1203—Circuits independent of the type of conversion
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Abstract
The invention relates to a protection circuit of an IGBT, in particular to a short-circuit protection detection circuit of an IGBT drive. The problem of current IGBT drive short-circuit protection detection circuitry short-circuit protection time receive busbar voltage influence, easily cause short-circuit protection untimely is solved. The circuit comprises a first NAND gate U4, a drive board input pulse signal CMD-H processing circuit and an IGBT collector-emitter voltage state acquisition circuit; an output end TP-CMD-H of the drive board input pulse signal CMD-H processing circuit is connected with a first input end of a first NAND gate U4, the drive board input pulse signal CMD-H is connected with a second input end of a first NAND gate U4, an output end HZ _ Vce of the IGBT collector-emitter voltage state acquisition circuit is connected with a third input end of the first NAND gate U4, and an output end of the first NAND gate U4 serves as an output FAILb of the IGBT drive short-circuit protection detection circuit. The invention has the advantages that the response time of the short-circuit protection is not changed no matter the bus voltage is increased or decreased.
Description
Technical Field
The invention relates to a protection circuit of an IGBT, in particular to a short-circuit protection detection circuit of an IGBT drive.
Background
The IGBT is used more and more widely in modern power electronic technology, and its driving circuit is an interface between the main circuit and the control circuit of the power electronic device, which is an important link of the power electronic device, and the performance of the IGBT has a great influence on the working performance of the whole circuit. In the switching power supply device, since the IGBT operates under conditions of high frequency, high voltage, and large current, the IGBT is easily damaged. Therefore, the design of the protection circuit of the IGBT is extremely important.
The short-circuit protection of the IGBT generally means that when the inductance in a short-circuit loop is small, the loop current rises rapidly, when the current rises to a certain value (generally 4-6 times of rated current), a desaturation phenomenon occurs, the voltage of a collector-emitter of the IGBT is bus voltage at the moment, the loss of the IGBT is very large, generally speaking, the IGBT bears a short-circuit state of 10us at most, a driving circuit is required to completely turn off the IGBT within 10us, and the protection at the moment is completely safe for the IGBT. When the desaturation phenomenon occurs, the collector-emitter voltage of the IGBT rises from a few volts to the bus voltage, and the change is very obvious, so whether the short circuit occurs can be judged according to the voltage between the collector and the emitter of the IGBT.
Fig. 1 is a schematic diagram of a conventional IGBT driving short-circuit protection detection circuit, and the working principle thereof is as follows:
a) when the IGBT is turned off, the MOSFET Q is turned on, the voltage on the capacitor Ca is clamped at 0V, and the comparator is not turned over;
b) when the IGBT is switched on, the MOSFET Q is switched off, the potential of a point C (voltage between the collector and the emitter of the IGBT) charges the capacitor Ca through the resistor Rvce and the resistor Rm, the potential of the point A is finally the saturation voltage drop of the IGBT, and the comparator is not turned over;
c) when the IGBT is in short circuit, the potential of the point C (collector-emitter voltage) rises to the bus voltage, the capacitor Ca is charged through the resistor Rvce and the resistor Rm, the potential of the point A is rapidly increased, a 15V power supply serves as a load source, finally, the potential of the point A is equal to 15V plus the voltage drop of the diode Dm, the voltage drop of the resistor Rm is subtracted, after response time, the comparator is turned over, the driving board reports a fault, the gate voltage of the IGBT is controlled to be negative according to the fault signal, and the IGBT is turned off. Since the IGBT can only withstand 10us of time when a short circuit occurs, and the comparator is reversed within 10us, Rm and Ca are used to adjust the response time.
It can be seen from the above working process that the IGBT short-circuit protection time may be different due to different bus voltages. And when the bus voltage is high, the short-circuit protection time is less than 10us, but when the bus voltage is lower, the short-circuit protection time is greater than 10us, so that the short-circuit protection is not timely, and the IGBT is damaged.
Disclosure of Invention
The invention solves the problem that short-circuit protection time of the existing IGBT driving short-circuit protection detection circuit is influenced by bus voltage and short-circuit protection is not timely easily caused, and provides the IGBT driving short-circuit protection detection circuit. No matter how the bus voltage changes, when the short circuit occurs, the short-circuit protection response time is 10us (a fixed value can be set), namely, the driver can turn off the IGBT within 10 us.
The IGBT driving short-circuit protection detection circuit comprises a first NAND gate U4, a drive board input pulse signal CMD-H processing circuit and an IGBT collector-emitter voltage state acquisition circuit; an output end TP-CMD-H of the drive board input pulse signal CMD-H processing circuit is connected with a first input end of a first NAND gate U4, the drive board input pulse signal CMD-H is connected with a second input end of a first NAND gate U4, an output end HZ _ Vce of the IGBT collector-emitter voltage state acquisition circuit is connected with a third input end of the first NAND gate U4, and an output end of the first NAND gate U4 is used as an output FAILb of the IGBT drive short-circuit protection detection circuit;
the drive board input pulse signal CMD-H processing circuit comprises a first comparator U1 and a second NAND gate U2, a first voltage division branch formed by connecting a third resistor R3 and a fifth resistor R5 in series is arranged at the same-phase end of the first comparator U1, one end of the first voltage division branch is connected with a power supply, the other end of the first voltage division branch is grounded, and a connecting node between the third resistor R3 and the fifth resistor R5 is connected with the same-phase end of the first comparator U1; a charge-discharge branch is arranged at the inverting end of the first comparator U1, the charge-discharge branch is provided with a charge branch formed by connecting a second resistor R2 and a first capacitor C1 in series, one end of a second resistor R2 of the charge branch is connected with the input pulse signal CMD-H of the driving board, the other end (namely one end of the first capacitor C1) of the second resistor R2 of the charge branch is grounded, and a connecting node between the second resistor R2 and the first capacitor C1 is connected with the inverting end of the first comparator U1; the charging and discharging branch circuit is also provided with a discharging branch circuit formed by connecting a first resistor R1 and a first diode D1 in series, the discharging branch circuit is connected in parallel with two ends of a second resistor R2, and the cathode of the first diode D1 is connected with a driving board input pulse signal CMD-H; the output end of the first comparator U1 is connected with one input end of a second NAND gate U2 (through a sixth resistor R6), and the other input end of the second NAND gate U2 is connected with the drive board input pulse signal CMD-H; the output end of the second NAND gate U2 is used as the output end TP-CMD-H of the driving board input pulse signal CMD-H processing circuit;
the IGBT collector-emitter voltage state acquisition circuit comprises a second comparator U3, a second voltage division branch formed by connecting a seventh resistor R7 and an eighth resistor R8 in series is arranged at the in-phase end of the second comparator U3, two ends of the second voltage division branch are respectively connected with a collector and an emitter of the IGBT, and a connecting node between the seventh resistor R7 and the eighth resistor R8 is connected with the in-phase end of a second comparator U3; the inverting end of the second comparator U3 is provided with a third voltage division branch formed by connecting a ninth resistor R9 and a tenth resistor R10 in series, one end of the third voltage division branch is connected with a power supply, the other end of the third voltage division branch is connected with an emitter of an IGBT, and a connecting node between the ninth resistor R9 and the tenth resistor R10 is connected with the inverting end of the second comparator U3; the output end of the second comparator U3 is used as the output end Hz _ Vce of the IGBT collector-emitter voltage state acquisition circuit.
When the IGBT works, when the collector-emitter voltage of the IGBT is higher than 500V, Hz _ Vce is high (15V); when the collector-emitter voltage of the IGBT is lower than 500V, Hz _ Vce is 0V.
(1) When CMD-H is low, TP-CMD-H is high level; when CMD-H is changed from low to high, a charging branch consisting of R2 and C1 forms a rising edge delay circuit, the inverting terminal of U1 is at low level and is not inverted at the beginning, and TP-CMD-H is at low level at the moment; after a certain response time, the inverting terminal of U1 becomes high level, U1 inverts, and TP-CMD-H is high level; the response time is determined by the reverse voltage of the charging branch consisting of R2, C1 and U1, and is typically set to 10 us. When the driving plate input pulse signal CMD-H changes from high to low, the capacitor C1 discharges through the discharge branch formed by R1 and D1.
(2) As shown in the first pulse of fig. 3, when CMD-H changes from low to high and the IGBT works normally, TP-CMD-H changes to low level, and at this time the IGBT has not yet been turned on, the collector-emitter voltage is high, so Hz _ Vce is high, and at this time FAILb is high, and no fault occurs; when the IGBT is switched on after a certain delay, the voltage of the collector and emitter of the IGBT is low, so that the Hz _ Vce is low, the FAILb is at a high level, and no fault occurs; when CMD-H is low, TP-CMD-H is high level, IGBT is turned off, collector-emitter voltage is high, Hz _ Vce is high, FAILb is high level, and no fault occurs.
(3) As shown in the second pulse of fig. 3, when CMD-H changes from low to high and the IGBT is short-circuited, the collector-emitter voltage rises to the bus voltage, Hz _ Vce is high, CMD-H is high at this time, but since TP-CMD-H is low at this time, FAILb is high at this time, no fault occurs, and after the response time elapses, TP-CMD-H is high, FAILb is low, the drive board reports a short-circuit fault, and the gate voltage of the drive is negative, and the IGBT is turned off.
The invention overcomes the problem that the response time of the driving short-circuit protection in the prior art is influenced by the bus voltage, and can ensure that the response time of the short-circuit protection is unchanged no matter the bus voltage is increased or decreased, thereby timely protecting the IGBT and improving the reliability of the product.
Drawings
FIG. 1 is a schematic circuit diagram of a prior art;
FIG. 2 is a schematic diagram of the circuit of the present invention;
FIG. 3 is a logic diagram of the clock in operation of the present invention.
Detailed Description
The IGBT driving short-circuit protection detection circuit comprises a first NAND gate U4, a drive board input pulse signal CMD-H processing circuit and an IGBT collector-emitter voltage state acquisition circuit; an output end TP-CMD-H of the drive board input pulse signal CMD-H processing circuit is connected with a first input end of a first NAND gate U4, the drive board input pulse signal CMD-H is connected with a second input end of a first NAND gate U4, an output end HZ _ Vce of the IGBT collector-emitter voltage state acquisition circuit is connected with a third input end of the first NAND gate U4, and an output end of the first NAND gate U4 is used as an output FAILb of the IGBT drive short-circuit protection detection circuit;
the drive board input pulse signal CMD-H processing circuit comprises a first comparator U1 and a second NAND gate U2, a first voltage division branch formed by connecting a third resistor R3 and a fifth resistor R5 in series is arranged at the same-phase end of the first comparator U1, one end of the first voltage division branch is connected with a power supply, the other end of the first voltage division branch is grounded, and a connecting node between the third resistor R3 and the fifth resistor R5 is connected with the same-phase end of the first comparator U1; a charge-discharge branch is arranged at the inverting end of the first comparator U1, the charge-discharge branch is provided with a charge branch formed by connecting a second resistor R2 and a first capacitor C1 in series, one end of a second resistor R2 of the charge branch is connected with the input pulse signal CMD-H of the driving board, the other end (namely one end of the first capacitor C1) of the second resistor R2 of the charge branch is grounded, and a connecting node between the second resistor R2 and the first capacitor C1 is connected with the inverting end of the first comparator U1; the charging and discharging branch circuit is also provided with a discharging branch circuit formed by connecting a first resistor R1 and a first diode D1 in series, the discharging branch circuit is connected in parallel with two ends of a second resistor R2, and the cathode of the first diode D1 is connected with a driving board input pulse signal CMD-H; the output end of the first comparator U1 is connected with one input end of a second NAND gate U2 (through a sixth resistor R6), and the other input end of the second NAND gate U2 is connected with the drive board input pulse signal CMD-H; the output end of the second NAND gate U2 is used as the output end TP-CMD-H of the driving board input pulse signal CMD-H processing circuit;
the IGBT collector-emitter voltage state acquisition circuit comprises a second comparator U3, a second voltage division branch formed by connecting a seventh resistor R7 and an eighth resistor R8 in series is arranged at the in-phase end of the second comparator U3, two ends of the second voltage division branch are respectively connected with a collector and an emitter of the IGBT, and a connecting node between the seventh resistor R7 and the eighth resistor R8 is connected with the in-phase end of a second comparator U3; the inverting end of the second comparator U3 is provided with a third voltage division branch formed by connecting a ninth resistor R9 and a tenth resistor R10 in series, one end of the third voltage division branch is connected with a power supply, the other end of the third voltage division branch is connected with an emitter of an IGBT, and a connecting node between the ninth resistor R9 and the tenth resistor R10 is connected with the inverting end of the second comparator U3; the output end of the second comparator U3 is used as the output end HZ _ Vce of the IGBT collector-emitter voltage state acquisition circuit.
In specific implementation, the power supply is 15V.
When the IGBT works, when the collector-emitter voltage of the IGBT is higher than 500V, Hz _ Vce is high (15V); when the collector-emitter voltage of the IGBT is lower than 500V, Hz _ Vce is 0V.
(1) When CMD-H is low, TP-CMD-H is high level; when CMD-H is changed from low to high, a charging branch consisting of R2 and C1 forms a rising edge delay circuit, the inverting terminal of U1 is at low level and is not inverted at the beginning, and TP-CMD-H is at low level at the moment; after a certain response time, the inverting terminal of U1 becomes high level, U1 inverts, and TP-CMD-H is high level; the response time is determined by the reverse voltage of the charging branch consisting of R2, C1 and U1, and is typically set to 10 us. When the driving plate input pulse signal CMD-H changes from high to low, the capacitor C1 discharges through the discharge branch formed by R1 and D1.
(2) As shown in the first pulse of fig. 3, when CMD-H changes from low to high and the IGBT works normally, TP-CMD-H changes to low level, and at this time the IGBT has not yet been turned on, the collector-emitter voltage is high, so Hz _ Vce is high, and at this time FAILb is high, and no fault occurs; when the IGBT is switched on after a certain delay, the voltage of the collector and emitter of the IGBT is low, so that the Hz _ Vce is low, the FAILb is at a high level, and no fault occurs; when CMD-H is low, TP-CMD-H is high level, IGBT is turned off, collector-emitter voltage is high, Hz _ Vce is high, FAILb is high level, and no fault occurs.
(3) As shown in the second pulse of fig. 3, when CMD-H changes from low to high and the IGBT is short-circuited, the collector-emitter voltage rises to the bus voltage, Hz _ Vce is high, CMD-H is high at this time, but since TP-CMD-H is low at this time, FAILb is high at this time, no fault occurs, and after the response time elapses, TP-CMD-H is high, FAILb is low, the drive board reports a short-circuit fault, and the gate voltage of the drive is negative, and the IGBT is turned off.
Claims (3)
1. An IGBT driving short-circuit protection detection circuit is characterized by comprising a first NAND gate U4, a driving board input pulse signal CMD-H processing circuit and an IGBT collector-emitter voltage state acquisition circuit; an output end TP-CMD-H of the drive board input pulse signal CMD-H processing circuit is connected with a first input end of a first NAND gate U4, the drive board input pulse signal CMD-H is connected with a second input end of a first NAND gate U4, an output end Hz _ Vce of the IGBT collector-emitter voltage state acquisition circuit is connected with a third input end of the first NAND gate U4, and an output end of the first NAND gate U4 is used as an output FAILb of the IGBT drive short-circuit protection detection circuit;
the drive board input pulse signal CMD-H processing circuit comprises a first comparator U1 and a second NAND gate U2, a first voltage division branch formed by connecting a third resistor R3 and a fifth resistor R5 in series is arranged at the same-phase end of the first comparator U1, one end of the first voltage division branch is connected with a power supply, the other end of the first voltage division branch is grounded, and a connecting node between the third resistor R3 and the fifth resistor R5 is connected with the same-phase end of the first comparator U1; a charge-discharge branch is arranged at the inverting end of the first comparator U1 and is provided with a charge branch formed by connecting a second resistor R2 and a first capacitor C1 in series, one end of a second resistor R2 of the charge branch is connected with the input pulse signal CMD-H of the driving board, the other end of the second resistor R2 of the charge branch is grounded, and a connecting node between the second resistor R2 and the first capacitor C1 is connected with the inverting end of the first comparator U1; the charging and discharging branch circuit is also provided with a discharging branch circuit formed by connecting a first resistor R1 and a first diode D1 in series, the discharging branch circuit is connected in parallel with two ends of a second resistor R2, and the cathode of the first diode D1 is connected with a driving board input pulse signal CMD-H; the output end of the first comparator U1 is connected with one input end of a second NAND gate U2, and the other input end of the second NAND gate U2 is connected with the drive board input pulse signal CMD-H; the output end of the second NAND gate U2 is used as the output end TP-CMD-H of the driving board input pulse signal CMD-H processing circuit;
the IGBT collector-emitter voltage state acquisition circuit comprises a second comparator U3, a second voltage division branch formed by connecting a seventh resistor R7 and an eighth resistor R8 in series is arranged at the in-phase end of the second comparator U3, two ends of the second voltage division branch are respectively connected with a collector and an emitter of the IGBT, and a connecting node between the seventh resistor R7 and the eighth resistor R8 is connected with the in-phase end of a second comparator U3; the inverting end of the second comparator U3 is provided with a third voltage division branch formed by connecting a ninth resistor R9 and a tenth resistor R10 in series, one end of the third voltage division branch is connected with a power supply, the other end of the third voltage division branch is connected with an emitter of an IGBT, and a connecting node between the ninth resistor R9 and the tenth resistor R10 is connected with the inverting end of the second comparator U3; the output end of the second comparator U3 is used as the output end Hz _ Vce of the IGBT collector-emitter voltage state acquisition circuit.
2. The IGBT driving short-circuit protection detection circuit according to claim 1, wherein the output terminal of the first comparator U1 is connected to one input terminal of a second NAND gate U2 through a sixth resistor R6.
3. The IGBT driving short-circuit protection detection circuit according to claim 1 or 2, wherein a power supply is 15V.
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| CN201910773038.5A CN110504659B (en) | 2019-08-21 | 2019-08-21 | IGBT drive short-circuit protection detection circuit |
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| CN201910773038.5A CN110504659B (en) | 2019-08-21 | 2019-08-21 | IGBT drive short-circuit protection detection circuit |
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| CN110504659B true CN110504659B (en) | 2021-06-22 |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113394753A (en) * | 2020-03-13 | 2021-09-14 | 欧姆龙(上海)有限公司 | Protection device and method for insulated gate bipolar transistor |
| CN113433379B (en) * | 2020-03-23 | 2022-04-26 | 中车株洲电力机车研究所有限公司 | Ee voltage detection device and method for IGBT |
| CN113433377B (en) * | 2020-03-23 | 2022-04-26 | 中车株洲电力机车研究所有限公司 | GE voltage detection device and method for IGBT |
| CN113447790B (en) * | 2021-07-13 | 2022-10-25 | 西安交通大学 | Non-contact IGBT state monitoring device |
| CN114295950B (en) * | 2021-11-29 | 2023-12-19 | 中车永济电机有限公司 | On-line detection device for collector-emitter saturation voltage drop of IGBT device |
| CN115808640B (en) * | 2023-02-09 | 2023-05-16 | 苏州浪潮智能科技有限公司 | Power failure detection circuit, method, system, electronic device and storage medium |
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| JP2004312907A (en) * | 2003-04-09 | 2004-11-04 | Fuji Electric Fa Components & Systems Co Ltd | Gate drive circuit of power semiconductor device |
| CN103033732A (en) * | 2012-11-09 | 2013-04-10 | 浙江大学 | Insulated gate bipolar transistor (IGBT) fault detection circuit |
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| CN208028563U (en) * | 2018-03-29 | 2018-10-30 | 西安理工大学 | The overcurrent protective device of SiCMOSFET converter drain-source voltages detection |
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| JP4223331B2 (en) * | 2003-06-13 | 2009-02-12 | 株式会社日立製作所 | Protection device for power control semiconductor element and power conversion device including the same |
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| JP2004312907A (en) * | 2003-04-09 | 2004-11-04 | Fuji Electric Fa Components & Systems Co Ltd | Gate drive circuit of power semiconductor device |
| CN103033732A (en) * | 2012-11-09 | 2013-04-10 | 浙江大学 | Insulated gate bipolar transistor (IGBT) fault detection circuit |
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