CN208028563U - The overcurrent protective device of SiCMOSFET converter drain-source voltages detection - Google Patents
The overcurrent protective device of SiCMOSFET converter drain-source voltages detection Download PDFInfo
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- CN208028563U CN208028563U CN201820443020.XU CN201820443020U CN208028563U CN 208028563 U CN208028563 U CN 208028563U CN 201820443020 U CN201820443020 U CN 201820443020U CN 208028563 U CN208028563 U CN 208028563U
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Abstract
The utility model discloses a kind of overcurrent protective devices of SiCMOSFET converters drain-source voltage detection.Including：6 drain-source voltage detection unit, Logical processing unit, pulse blocking unit, SiCMOSFET, driving unit and peripheral control unit units.Without sensor, testing cost is substantially reduced；The threshold value of overcurrent protection can be changed in the size for adjusting variable resistance, flexible and convenient to use；Inhibit triode to penetrate collecting voltage spike by voltage-stabiliser tube, effectively prevents the malfunction of overcurrent protection, securely and reliably, detection speed is fast.
Description
Technical field
The utility model belongs to power electronics field, is related to a kind of detection of SiCMOSFET converters drain-source voltage
Overcurrent protective device.
Background technology
Silicon carbide power electronic device is because having the high pressure resistant property of tens thousand of volts, being more than 500 DEG C of high-temperature stabilities, switch speed
The unique advantages such as fast and low-loss are spent, huge application potential is shown in Future New Energy Source converters.
SiCMOSFET converters are small, and loss is low, and power density is high, is to build a conservation-minded society, promote national economic development, trampling
The important support technology of row innovation driving development strategy.
It is the guarantee of SiCMOSFET converter safe operations that SiCMOSFET overcurrent, which is detected with protection,.Over-current detection conduct
The core of overcurrent protection should be paid close attention to.Currently, the over-current detecting method based on IGBT has tended to be ripe, such as inductance
Detection, desaturation detection etc., while the over-current detection mode based on IGBT is transplanted in SiCMOSFET by someone realizes overcurrent
The function of detection, but there are still many defects and deficiencies.
In the article " Short-Circuit that A.E.Awwad in 2015, S.Dieckerhoff.Liang et al. are delivered
Evaluation and Overcurrent Protection for SiC Power MOSFETs.”(proceedinds of
IEEE 17th European Conference on Power Electronics and Applications) in be directed to
SiCMOSFET devices disclose the current foldback circuit based on inductance detection.Source electrode of the circuit in SiCMOSFET seals in one
A inductance value is the inductance of nanohenry grade, and parallel RC circuits on the inductance, and using the midpoint of RC connections as the defeated of detection circuit
Outlet.When there is over current fault, detect on inductance and induced voltage occur, so the output end voltage of detection circuit with flow through
The drain current of SiCMOSFET has approximate ratio relationship.However this mode that detection inductance is sealed in SiCMOSFET source electrodes
Equivalent to increase the parasitic inductance of source electrode, the gate source voltage of SiCMOSFET can be made to generate pulsation and reduce switching speed.This
The essence of the outer detection circuit is RLC resonance, and main circuit can be made to generate oscillation, influence the performance of main circuit.
In Zhiqiang Wang, Xiaojie Shi, Yang Xue, Leon M.Tolbert, Benjamin in 2014
Article " the Design and Performance Evaluation of that J.Blalock, Fred Wang et al. is delivered
Overcurrent Protection Schemes for Silicon Carbide(SiC)Power MOSFETs.”(IEEE
Transactions on Industrial Electronics) in be directed to SiCMOSFET, disclose and a kind of examined based on desaturation
The current foldback circuit of survey.The detection circuit is mainly made of detection diode, blanking circuit, comparator etc., passes through detection two
Pole pipe is detected the drain-source voltage of SiCMOSFET, and the blanking circuit by being made of capacitance etc. generates the blanking time, prevents
Only over-current protection malfunction is made, while being compared with given value to the collected drain-source voltage of diode by comparing device, and defeated
Go out over-current signal.According to circuit theory, which must have the reverse BV higher than busbar voltage, this meaning
The diode has larger forward voltage drop, this will bring adverse effect to the accuracy of detection of desaturation, while have height
The diode cost of blocking voltage is higher.In addition, the blanking circuit protected circuit false triggering in order to prevent and be arranged can increase guarantor
The delay time of protection circuit.
In conclusion being suitble to efficient, quick, the inexpensive SiCMOSFET overcurrent protective devices of SiCMOSFET converters
Research with regard to necessary.
Utility model content
The purpose of this utility model is to provide a kind of overcurrent protective device of SiCMOSFET converters drain-source voltage detection,
Current Sensorless reduces testing cost, at the same solve it is existing in the prior art when SiCMOSFET is turned off due to compared with
Big drain-source voltage and lead to the problem of the malfunction of SiCMOSFET overcurrent protections.
The utility model is the technical scheme adopted is that the overcurrent protection of SiCMOSFET converter drain-source voltages detection fills
It sets, including：Drain-source voltage detection unit, drain-source voltage detection unit be sequentially connected Logical processing unit, pulse blocking unit and
The grid of SiCMOSFET, drain-source voltage detection unit are also connect with the drain electrode of SiCMOSFET and source electrode simultaneously, drain-source voltage inspection
It surveys unit and is also connected with pulse blocking unit, pulse blocking unit also connects with the source electrode of driving unit both ends and SiCMOSFET simultaneously
It connects；Logical processing unit is also associated with peripheral control unit, can will be outer when peripheral control unit detects overcurrent or over-voltage fault
It encloses fault-signal and is transferred to Logical processing unit, the overcurrent protection to peripheral control unit is realized by the technical program.
The characteristics of overcurrent protective device of SiCMOSFET converter drain-source voltages detection, also resides in：
Drain-source voltage detection unit includes resistance Rd1, and resistance Rd1 connects resistance Rc and resistance Rd2 simultaneously, and resistance Rd2 is also
Connect reference ground；Resistance Rc is also connected with the emitter of triode Q, and the collector of triode Q connects reference ground, the base of triode Q
Pole is connect with the cathode of voltage-stabiliser tube Dz and resistance R3 simultaneously, and the one end of resistance R3 also simultaneously with one end of resistance R1, resistance R2 connects
It connects, the resistance R1 other ends are also connect with pulse blocking unit；The resistance R2 other ends simultaneously with pulse blocking unit and SiCMOSFET
Connection；The anode of voltage-stabiliser tube Dz is connected with reference ground；Resistance Rc is also connect with the positive input terminal of comparator U1C, comparator U1C's
Negative input end is connect with resistance R4 and variable resistance R5 simultaneously, and resistance R4 is also connect with power supply, variable resistance R5 also with reference ground
It is connected；The output end O1 of comparator U1C connects resistance R6 and Logical processing unit simultaneously, resistance R6 also with light emitting diode D1
Anode connection, the cathode of light emitting diode D1 connect with reference ground；Resistance Rd1 is also connect with SiCMOSFET.
Logical processing unit includes nor gate U1N, and the first input end of nor gate U1N and the output end O1 of comparator connect
It connects, the second input terminal of nor gate U1N is connected with one end of resistance R7, the anode phase of the resistance R7 other ends and light emitting diode D2
Even, the cathode of light emitting diode D2 is connected with reference ground；The second input terminal of nor gate U1N is also connected with peripheral control unit；Institute
The output end for stating nor gate U1N is connected with the first input end of NAND gate U2N, the second input terminal and NAND gate of NAND gate U2N
The output end of U3N is connected, the output end O2 of NAND gate U2N while the first input end with pulse blocking unit and NAND gate U3N
Connection, the second input terminal of NAND gate U3N are sequentially connected switch S and power supply.
Pulse blocking unit includes resistance Rg, and the one end resistance Rg is connected with the output end O2 of NAND gate U2N, other end connection
The drain electrode of the grid of mos pipes M, mos pipes M is connected with the output end of SiCMOSFET, resistance R1 and driving unit simultaneously, mos pipes M
Source electrode simultaneously be connected with the ground terminal of SiCMOSFET, resistance R2 and driving unit.
The source electrode of SiCMOSFET connects the source electrode and reference ground of resistance R2, mos pipe M simultaneously, and the grid of SiCMOSFET connects
The drain electrode of mos pipes M is connect, the drain electrode of SiCMOSFET is connect with resistance Rd1.
Triode Q is positive-negative-positive.
Mos pipes M is N-channel type.
The utility model has the beneficial effects that it is quasi- according to SiCMOSFET characteristics, a kind of SiCMOSFET converters leakage is provided
The overcurrent protective device of source voltage detecting.Current Sensorless is used for reflecting SiCMOSFET overcurrent by electric resistance partial pressure acquisition
Drain-source voltage, keep testing cost low；Drain-sources of the collecting voltage selection detection SiCMOSFET only in on-state is penetrated by triode
Voltage, and inhibit triode to penetrate collecting voltage spike by voltage-stabiliser tube, effectively prevent the malfunction of current foldback circuit；Adjusting can
Become resistance and change rotection thresholds, facilitates the design of different model SiCMOSFET rotection thresholds, the setting of overcurrent threshold value flexible and convenient；
Improve the reliability of SiCMOSFET converter overcurrent protections.
Description of the drawings
Fig. 1 is the unit composition figure of the over-current detection driving device of the utility model；
Fig. 2 is the circuit diagram of the utility model；
Fig. 3 is the utility model test circuit；
Fig. 4 is the output characteristic curve figure of SiCMOSFET；
Fig. 5 is the PSPICE simulation waveforms of the utility model once in operating mode；
Fig. 6 is PSPICE simulation waveform of the utility model under operating mode two.
Specific implementation mode
The utility model is described in detail with reference to the accompanying drawings and detailed description.
The overcurrent protective device of the utility model SiCMOSFET converter drain-source voltages detection, as shown in Figure 1, including：Leakage
Source voltage detection unit 1, Logical processing unit 2, pulse blocking unit 3, SiCMOSFET4, driving unit 5 and peripheral control unit；
Drain-source voltage detection unit 1 be sequentially connected Logical processing unit 2, pulse blocking unit 3 and SiCMOSFETT4 grid, drain-source
Voltage detection unit 1 is also connect with the drain electrode of SiCMOSFET4 and source electrode simultaneously, and drain-source voltage detection unit 1 is also connected with pulse envelope
Lock unit 3, pulse blocking unit 3 are also connect with the source electrode at 5 both ends of driving unit and SiCMOSFET4 simultaneously；Logical processing unit
2 connect with peripheral control unit.
As shown in Fig. 2, being the circuit diagram of the overcurrent protective device of SiCMOSFET converter drain-source voltages detection, leakage
Source voltage detection unit 1 includes resistance Rd1, and resistance Rd1 connects resistance Rc and resistance Rd2 simultaneously, and resistance Rd2 is also connected with reference
Ground；Resistance Rc is also connected with the emitter of PNP type triode Q, and the collector of PNP type triode Q connects reference ground, three pole of positive-negative-positive
The base stage of pipe Q connect with the cathode of voltage-stabiliser tube Dz and resistance R3 simultaneously, resistance R3 also and meanwhile with one end of resistance R1, resistance R2
One end connects, and the resistance R1 other ends are also connect with pulse blocking unit 3；The resistance R2 other ends simultaneously with pulse blocking unit 3 and
SiCMOSFET4 connections；The anode of voltage-stabiliser tube Dz is connected with reference ground；Resistance Rc is also connect with the positive input terminal of comparator U1C,
The negative input end of comparator U1C is connect with resistance R4 and variable resistance R5 simultaneously, and resistance R4 is also connect with power supply, variable resistance R5
Also it is connected with reference ground；The output end O1 of comparator U1C connects resistance R6 and Logical processing unit 2 simultaneously, resistance R6 also with
The anode of light emitting diode D1 connects, and the cathode of light emitting diode D1 is connect with reference ground；Resistance Rd1 also connects with SiCMOSFET4
It connects.
Logical processing unit 2 includes nor gate U1N, and the first input end of nor gate U1N and the output end O1 of comparator connect
It connects, the second input terminal of nor gate U1N is connected with one end of resistance R7, the anode phase of the resistance R7 other ends and light emitting diode D2
Even, the cathode of light emitting diode D2 is connected with reference ground；The second input terminal of nor gate U1N is also connected with peripheral control unit；Or
The output end of NOT gate U1N is connected with the first input end of NAND gate U2N, and the second input terminal of NAND gate U2N is with NAND gate U3N's
Output end is connected, and the output end O2 of NAND gate U2N is connect with the first input end of pulse blocking unit 3 and NAND gate U3N simultaneously,
The second input terminal of NAND gate U3N is sequentially connected switch S and power supply.
Pulse blocking unit 3 includes resistance Rg, and the one end resistance Rg is connected with the output end O2 of NAND gate U2N, and the other end connects
Connect the grid of N-channel type mos pipes M, the drain electrode of N-channel type mos pipes M simultaneously with SiCMOSFET4, resistance R1 and driving unit 5
Output end is connected, and the source electrode of N-channel type mos pipes M is connected with the ground terminal of SiCMOSFET4, resistance R2 and driving unit 5 simultaneously.
The source electrode of SiCMOSFET4 connects the source electrode and reference ground of resistance R2, N-channel type mos pipes M, SiCMOSFET4 simultaneously
Grid connection N-channel type mos pipes M drain electrode, the drain electrode of SiCMOSFET4 connect with resistance Rd1.
As shown in figure 3, the overcurrent protective device of the utility model SiCMOSFET converters and the test circuit of guard method
For SiCMOSFET semi-bridge alternation circuits.Wherein upper bridge arm SiCMOSFET pipes T1 and lower bridge arm SiCMOSFET pipes T2 is connected in series with,
Support Capacitor C1, C2 are connected in series with, and capacitive branch, SiCMOSFET switching tube branches are connected with power sources in parallel, and the negative terminal of power supply connects
Ground is load branch between the midpoint and the midpoint of switching tube branch of capacitive branch.Loadtype is that pure resistance is negative in this test circuit
It carries, is indicated with resistance R；Inductance L is used for the parasitic inductance of analog line；The series arm of resistance Ra and switch Sa is connected in parallel on load
The both ends of R, over-current phenomenon avoidance in analog circuit, this overcurrent are denoted as internal over current fault, and corresponding over-current signal is denoted as inside
Over-current signal.
Fig. 4 is the output characteristic curve of SiCMOSFET, and overcurrent protection threshold value in the utility model can be obtained according to Fig. 4
With the relationship of comparator negative input end given value.It can be seen that drain-source voltage increases with the increase of drain current.The Vref is enabled to be
Comparator negative input end given value can determine that Idp is corresponding if expected overcurrent protection threshold value is Idp according to Fig. 4
SiCMOSFET drain-source voltages are Vdsr, and then pass through formula：Calculate comparator negative input end
Given value.
As shown in Figure 5 and Figure 6, the working condition of switching tube circuit under different operating situation is illustrated for the above bridge, and
Detailed analysis is done to the specific work process and operation principle of the utility model.
As shown in table 1, it is Logical processing unit logic function table.
1 Logical processing unit logic function table of table
Embodiment 1
For the above bridge SiCMOSFET, illustrate SiCMOSFET half-bridge converters when no overcurrent occurs, overcurrent is protected
Protect the working condition of detection circuit.SiCMOSFET selects the switch of the model SCH2080KE 1200V 35A of ROHM companies
It managing, involved power supply+VEE is positive 5V power supplys in Fig. 2, and resistance Rd1 and Rd2 are respectively that 0 Ω and 1M Ω, R4 is 5k Ω,
The positive driving voltage of actual test driving circuit design is 20V, it is assumed that determines that overcurrent protection threshold value is 28A, looks into Fig. 4's
Corresponding drain-source voltage is 2.3V at this time known to SiCMOSFET output characteristic curves, according to formulaMeter
The voltage given value that calculation can obtain comparator U1C negative input ends should be set as 2.3V.Further according to formulaCalculating can
4.26k Ω should be set as by obtaining variable resistance R5.Power supply E is 150V in test circuit Fig. 3, and C1, C2 are 3300 μ F, and load R is
75 Ω, resistance Ra are 1 Ω, and parasitic inductance L is 50nH, and switch Sa is closed in 240 μ s, and Fig. 5 is the waveform for meeting this example
Figure.
When bearing positive driving voltage between T1 grid source electrodes, T1 conductings, and B point current potentials are more than zero, PNP type triode Q is turned off,
Since the on-state voltage drop of T1 is very low and is bordering on zero, the positive input terminal current potential of comparator U1C is approximately equal to zero, is less than given overcurrent threshold
Value, comparator U1C export low level；Nor gate U1N exports high level；NAND gate U3N exports low level；The pulse blocking electricity of T1
Road is not triggered, T1 normal works.When bearing negative driving voltage between T1 grid source electrodes, T1 shutdowns, and B point current potentials are less than zero, PNP
Type triode Q is open-minded, and triode Q emitter potentials are that triode Q penetrates collection on state voltage, about 0.3V, i.e. comparator U1C
Positive input terminal input voltage be 0.3V, be less than negative input end voltage given value 2.3V, therefore the output of comparator U1C be it is low
Level；Nor gate U1N outputs are high level；NAND gate U3N exports low level；The pulse blocking circuit of T1 is not triggered.
Fig. 5 represent bridge arm SiCMOSFET from normal work to when there is over current fault in PSPICE simulation softwares
Simulation waveform, from top to bottom：
The gate source voltage Ugs of upper bridge arm SiCMOSFET pipes T1 in first waveforms stands semi-bridge alternation circuit；
Triode Q penetrates collecting voltage Uec in bridge arm over-current detection driving device on second waveforms stands；
On third waveforms stands in bridge arm over-current detection driving device comparator U1C output ends O1 voltage；
On 4th waveforms stands in bridge arm over-current detection driving device Logical processing unit output end O2 voltage；
The drain current Id of bridge arm SiCMOSFET pipes T1 on 5th waveforms stands.
Embodiment 2
For the above bridge SiCMOSFET, illustrate SiCMOSFET half-bridge converters when overcurrent occurs, overcurrent inspection
Survey the working condition of protection circuit, it is clear that over current fault only appears in T1 opening processes.The utility model embodiment 1 and reality
It applies example 2 and is combined as operating mode one, that is, circuit described in technical solutions of the utility model for the overcurrent protection feelings in itself circuit
Condition.SiCMOSFET selects the switching tube of the model SCH2080KE 1200V 35A of ROHM companies, involved electricity in Fig. 2
Source+VEE is positive 5V power supplys, and resistance Rd1 and Rd2 are respectively that 0 Ω and 1M Ω, R4 is 5k Ω, the design of actual test driving circuit
Positive driving voltage be 20V, it is assumed that determine that overcurrent protection threshold value is 28A, look into known to the SiCMOSFET output characteristic curves of Fig. 4
Corresponding drain-source voltage is 2.3V at this time.According to formulaThe voltage that can be calculated comparator U1C is given
Value should be set as 2.3V.Again by formulaCan be calculated variable resistance R5 should be set as 4.26k Ω.Test circuit
Power supply E is 150V in Fig. 3, and C1, C2 are 3300 μ F, and load R is 75 Ω, and resistance Ra is 1 Ω, and parasitic inductance L is 50nH, switch
Sa is closed in 240 μ s, and Fig. 5 is the oscillogram for meeting this example.
When over current fault occurs in T1, positive driving voltage is born between the grid source electrode of T1, B point current potentials are more than zero, and triode Q is closed
It is disconnected；With being continuously increased for drain current, the drain-source voltage of T1 can be also continuously increased, i.e. A point voltages can be also continuously increased, therefore three
Pole pipe Q emitter potentials constantly increase, when the input voltage of comparator U1C positive input terminals is increased up more than given overcurrent threshold value
When, the overturning of comparator U1C output levels becomes high level, and light emitting diode D1 is lit at this time, while nor gate U1N outputs are
Low level, NAND gate U3N export high level, the pulse blocking circuit of pulse blocking unit triggers T1, T1 shutdowns.
Embodiment 3
For the above bridge SiCMOSFET, illustrate when there is external fault signal to be passed to, the detection of SiCMOSFET overcurrent is protected
The working condition of protection circuit.
The utility model embodiment 3 is exactly operating mode two, that is, when there is external fault, passes through the utility model technical side
Circuit described in case realizes the protection to other failures.SiCMOSFET selects the model SCH2080KE 1200V of ROHM companies
The switching tube of 35A, involved power supply+VEE is positive 5V power supplys in Fig. 2, and peripheral fault-signal is accessed in 240 μ s；It surveys
It is 150V to try power supply E in circuit diagram 3, and C1, C2 are 3300 μ F, and load R is 75 Ω, and parasitic inductance L is 50nH, under operating mode two
Switch Sa is not closed.
When the output signal of the drain-source voltage detection unit of T1 is low level, and peripheral fault-signal is high level, hair
Optical diode D2 is lit, and nor gate U1N exports low level, and NAND gate U3N exports high level, the mos pipes M of pulse blocking unit
It is open-minded, trigger the pulse blocking circuit of T1, T1 shutdowns.
It is imitative in PSPICE that Fig. 6 represents bridge SiCMOSFET over-current detection protection circuits after the access of peripheral fault-signal
Simulation waveform in true software, is followed successively by from top to bottom：
Peripheral fault-signal OF in bridge over-current detection driving device on first waveforms stands；
On second waveforms stands in bridge over-current detection driving device Logical processing unit output end O2 voltage；
The drain current Id of bridge SiCMOSFET T1 on third waveforms stands.
Claims (7)
- The overcurrent protective device of 1.SiCMOSFET converter drain-source voltages detection, which is characterized in that including：Drain-source voltage detects Unit (1), the drain-source voltage detection unit (1) be sequentially connected Logical processing unit (2), pulse blocking unit (3) and The grid of SiCMOSFET (4), the drain-source voltage detection unit (1) the also drain electrode with SiCMOSFET (4) simultaneously and source electrode connect Connect, the drain-source voltage detection unit (1) is also connected with pulse blocking unit (3), the pulse blocking unit (3) also simultaneously with drive Moving cell (5) both ends are connected with the source electrode of SiCMOSFET (4), and the Logical processing unit (2) is also associated with peripheral control unit.
- 2. the overcurrent protective device of SiCMOSFET converters drain-source voltage detection according to claim 1, feature exist In the drain-source voltage detection unit (1) includes resistance Rd1, and the resistance Rd1 connects resistance Rc and resistance Rd2, resistance simultaneously Rd2 is also connected with reference ground；The resistance Rc is also connected with the emitter of triode Q, and the collector of the triode Q connects reference ground, the triode Q Base stage connect simultaneously with the cathode of voltage-stabiliser tube Dz and resistance R3, resistance R3 also and meanwhile with one end of resistance R1, resistance R2 one End connection, the resistance R1 other ends are also connect with pulse blocking unit (3)；The resistance R2 other ends while and pulse blocking Unit (3) and SiCMOSFET (4) connections；The anode of the voltage-stabiliser tube Dz is connected with reference ground；The resistance Rc is also connect with the positive input terminal of comparator U1C, the negative input end of comparator U1C simultaneously with resistance R4 and can Become resistance R5 connections, resistance R4 is also connect with power supply, and variable resistance R5 is also connected with reference ground；The output end O1 of the comparator U1C connects resistance R6 and Logical processing unit (2) simultaneously, resistance R6 also with light-emitting diodes The anode of pipe D1 connects, and the cathode of light emitting diode D1 is connect with reference ground；The resistance Rd1 is also connect with SiCMOSFET (4).
- 3. the overcurrent protective device of SiCMOSFET converters drain-source voltage detection according to claim 2, feature exist In the Logical processing unit (2) includes nor gate U1N, the output end of the first input end and comparator of the nor gate U1N Second input terminal of O1 connections, nor gate U1N is connected with one end of resistance R7, the sun of the resistance R7 other ends and light emitting diode D2 Extremely it is connected, the cathode of light emitting diode D2 is connected with reference ground；The second input terminal of the nor gate U1N also with peripheral control unit It is connected；The output end of the nor gate U1N is connected with the first input end of NAND gate U2N, the second input terminal of NAND gate U2N with The output end of NAND gate U3N is connected, the output end O2 of NAND gate U2N simultaneously with pulse blocking unit (3) and NAND gate U3N the One input terminal connects, and the second input terminal of the NAND gate U3N is sequentially connected switch S and power supply.
- 4. the overcurrent protective device of SiCMOSFET converters drain-source voltage detection according to claim 3, feature exist In the pulse blocking unit (3) includes resistance Rg, and the one end resistance Rg is connected with the output end O2 of NAND gate U2N, and the other end connects Connect the grid of mos pipes M, the drain electrode of mos pipes M while the output end phase with SiCMOSFET (4), resistance R1 and driving unit (5) Even, the source electrode of mos pipes M is connected with the ground terminal of SiCMOSFET (4), resistance R2 and driving unit (5) simultaneously.
- 5. the overcurrent protective device of SiCMOSFET converters drain-source voltage detection according to claim 4, feature exist In the source electrode of the SiCMOSFET (4) connects the source electrode and reference ground of resistance R2, mos pipe M, the grid of SiCMOSFET (4) simultaneously Pole connects the drain electrode of mos pipes M, and the drain electrode of SiCMOSFET (4) is connect with resistance Rd1.
- 6. the overcurrent protective device of SiCMOSFET converters drain-source voltage detection according to claim 2, feature exist In the triode Q is positive-negative-positive.
- 7. the overcurrent protective device of SiCMOSFET converters drain-source voltage detection according to claim 4, feature exist In the mos pipes M is N-channel type.
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| CN115261603B (en) * | 2022-07-11 | 2024-03-29 | 武安市裕华钢铁有限公司 | Automatic control system of heating furnace |
| CN115575283A (en) * | 2022-09-30 | 2023-01-06 | 南京凤嘉科技有限公司 | Control circuit of SF6 gas density meter |
| CN115575283B (en) * | 2022-09-30 | 2024-03-26 | 南京凤嘉科技有限公司 | Control circuit of SF6 gas density meter |
| CN115664398A (en) * | 2022-11-18 | 2023-01-31 | 瀚昕微电子(无锡)有限公司 | Overcurrent protection system and method of silicon carbide driver, driver and driving system |
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