CN114123099B - Overcurrent protection circuit of GaN HEMT device - Google Patents
Overcurrent protection circuit of GaN HEMT device Download PDFInfo
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- CN114123099B CN114123099B CN202111580276.8A CN202111580276A CN114123099B CN 114123099 B CN114123099 B CN 114123099B CN 202111580276 A CN202111580276 A CN 202111580276A CN 114123099 B CN114123099 B CN 114123099B
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
Abstract
The application belongs to the field of power device application, in particular relates to an overcurrent protection circuit of a GaN HEMT device, and aims to solve the problems of low response speed, poor anti-interference capability, complex circuit and high cost of an overcurrent detection technology of a conventional GaN HEMT device. The application comprises the following steps: the GaN HEMT device to be tested, the active clamping circuit, the voltage signal processing circuit, the voltage comparison circuit and the driving circuit are used for realizing accurate measurement of on-state voltage drop of the GaN HEMT in a conducting stage under a high-speed switching state by adopting the voltage clamping circuit, comparing the measured value with an overcurrent protection threshold value of the device in real time, and performing protection action. The application has the advantages of simple structure, high detection precision, high detection bandwidth, high reliability and strong anti-interference capability.
Description
Technical Field
The application belongs to the field of power device application, and particularly relates to an overcurrent protection circuit of a GaN HEMT device.
Background
The GaN HEMT device has wide application prospect in the fields of high efficiency and high-frequency power conversion due to the superior characteristics of high switching frequency, low on-resistance and the like. The overcurrent short-circuit fault is one of the important causes of failure of the GaN HEMT. The lack of a fast, reliable, low-loss short-circuit protection method is one of the key obstacles limiting the widespread use of GaN HEMTs.
At present, the overcurrent detection method for the GaN HEMT device mainly adopts the traditional method of a silicon-based power device, and comprises current sensor detection, desaturation detection, shunt detection and the like. The detection of the current sensor can realize the electrical isolation between the power loop and the detection loop, and has the advantages of high reliability, good temperature stability and the like, but has the defects of larger volume, lower bandwidth and higher price; the desaturation detection method realizes the detection and protection of overcurrent by detecting the tube voltage drop of the GaN HEMT device, has simple principle and low cost, is easily influenced by larger switch oscillation and crosstalk in the switching process, and has detection dead zones; the current divider detection method realizes current detection by detecting the voltages at two ends of the resistor, has simple principle, high precision and high reliability, but has relatively large power loss in the application of larger current, and causes serious heating problem.
The high-speed switching characteristic and the structural characteristic of the GaN HEMT device lead to weak short circuit bearing capacity, and the prior art cannot be suitable for the rapid and reliable protection of the GaN HEMT device. Since GaN HEMT devices have smaller chip area and higher current density at the same rated current capacity, their short-circuit withstand capability is lower than silicon-based power devices, and thus protection circuits are required to have faster detection and response times. On the other hand, compared with a silicon-based power device, the GaN HEMT has higher switching speed and smaller junction capacitance, and higher dv/dt and di/dt under high-speed switching can introduce larger crosstalk noise in a signal detection and driving loop, and the fast response of overcurrent detection and the stronger noise immunity are a pair of contradictions, which also becomes one of the design difficulties of an overcurrent protection circuit of the GaN HEMT device. Therefore, how to realize accurate, rapid and reliable current detection and protection of the GaN HEMT device is one of the difficult technologies of reliable application of the GaN HEMT device at present.
Disclosure of Invention
In order to solve the problems in the prior art, namely the problems of low response speed, poor anti-interference capability, complex circuit and high cost in the overcurrent detection technology of the conventional GaN HEMT device, the application provides a GaN HEMT device overcurrent protection circuit, which comprises a GaN HEMT device to be detected, an active clamping circuit, a voltage signal processing circuit, a voltage comparison circuit and a driving circuit;
the GaN HEMT device to be tested is a single GaN HEMT switch tube or a GaN HEMT power module;
the active clamping circuit comprises a clamping switching tube and a clamping capacitor which are connected in series, and is connected with the GaN HEMT device to be tested in parallel and used for accurately measuring the conduction voltage drop of the GaN HEMT device to be tested in the conduction state;
the voltage signal processing circuit is a high-speed operational amplifier circuit which is connected with the clamping capacitor in parallel and is used for measuring the voltage at two ends of the clamping capacitor and carrying out filtering and amplifying treatment on the measured voltage signal;
the voltage comparison circuit is used for comparing the voltage signal processed by the voltage signal processing circuit with an overcurrent protection threshold of the GaN HEMT device to be tested, and controlling the working state of the driving circuit according to a comparison result;
and the driving circuit is used for driving the GaN HEMT device to be tested and the clamping switching tube.
In some preferred embodiments, the withstand voltage value of the clamp switching tube is not smaller than the withstand voltage value of the GaN HEMT device to be tested.
In some preferred embodiments, the on time of the clamp switching tube lags the GaN HEMT device to be tested, and the off time of the clamp switching tube is the same as the GaN HEMT device to be tested.
In some preferred embodiments, the difference between the capacitance of the clamp capacitor and the capacitance of the parasitic output capacitor of the clamp switch tube is greater than a set first threshold.
In some preferred embodiments, a difference between the capacitance of the clamp capacitor and the on-resistance of the clamp switching tube is greater than a set second threshold;
when the GaN HEMT device to be tested and the clamping switch tube are conducted, voltages at two ends of the GaN HEMT device to be tested are applied to two ends of the clamping capacitor, so that conduction voltage drop of the GaN HEMT device to be tested is accurately measured.
In some preferred embodiments, the voltage signal processing circuit and the voltage comparison circuit are discrete component built circuits or integrated circuit chips.
In some preferred embodiments, the voltage signal processed by the voltage signal processing circuit is a conduction voltage drop of the GaN HEMT device to be tested.
In some preferred embodiments, the conduction voltage drop of the GaN HEMT device to be tested is also used for controlling the current feedback of the loop.
In some preferred embodiments, the driving circuit is a control chip with two outputs or two independent driving chips with one output respectively.
In some preferred embodiments, the GaN HEMT device to be tested has a drain-source voltage v in an off state DS_off And on-state voltage drop v DS_on The method comprises the following steps of:
wherein v is C1 And v' c1 Clamping capacitor C in turn-off state and turn-on state of GaN HEMT device to be tested 1 Voltage across the two terminals, Z C1 For clamping capacitor C 1 Equivalent capacitive reactance of R DM Differential mode input impedance, Z, for an operational amplifier in a voltage signal processing circuit Coss_S1 For clamping the switching tube S 1 Equivalent capacitive reactance of parasitic output capacitance of R DSon_S1 For clamping the switching tube S 1 On-resistance of (c).
The application has the beneficial effects that:
(1) According to the over-current protection circuit of the GaN HEMT device, accurate measurement of conduction voltage drop of the GaN HEMT device in a conduction stage under high-speed switching is achieved through the adoption of the active clamping circuit, and high-precision detection of the conduction voltage drop of the GaN HEMT device can be achieved through the characteristics that capacitance reactance of the active clamping capacitor is far smaller than parasitic output capacitance of the clamping switching tube and far larger than conduction resistance of the clamping switching tube, and the over-current protection circuit has the advantages of being simple in structure, high in detection precision and high in detection bandwidth.
(2) According to the overcurrent protection circuit of the GaN HEMT device, the voltage at the two ends of the active clamping capacitor is measured by adopting the high-speed operational amplifier to accurately detect the current of the GaN HEMT device, and the judgment of the overcurrent state is realized by the voltage comparison circuit, so that the overcurrent protection circuit has the advantages of high response speed, low power consumption and low cost.
(3) According to the over-current protection circuit of the GaN HEMT device, the active clamp switching tube lags the turn-on of the GaN HEMT device to be tested (namely, the active clamp switching tube delays the turn-on of the GaN HEMT device to be tested compared with the GaN HEMT device to be tested), so that voltage oscillation of the GaN HEMT device in the turn-on process can be avoided, and the over-current protection circuit has the advantages of being high in reliability and high in anti-interference capability.
(4) According to the overcurrent protection circuit of the GaN HEMT device, the device state is judged by detecting the voltage drop of the GaN HEMT device due to different maximum currents bearable by the GaN HEMT device at different temperatures, and the overcurrent protection circuit can accurately reflect the working operation state of the device compared with the direct detection of the current of the GaN HEMT device, and has the advantages of high reliability and strong applicability.
Drawings
Other features, objects and advantages of the present application will become more apparent upon reading of the detailed description of non-limiting embodiments, made with reference to the accompanying drawings in which:
fig. 1 is a schematic circuit structure diagram of an embodiment of an overcurrent protection circuit of a GaN HEMT device of the present application;
FIG. 2 is a schematic diagram of exemplary switching waveforms for one embodiment of the over-current protection circuit of the GaN HEMT device of the application;
fig. 3 is a current detection equivalent circuit of an embodiment of the overcurrent protection circuit of the GaN HEMT device of the present application in the off state of the GaN HEMT device;
fig. 4 is a current detection equivalent circuit of an embodiment of the overcurrent protection circuit of the GaN HEMT device of the present application in the on state of the GaN HEMT device;
fig. 5 is a block diagram of a Buck circuit of an embodiment of the overcurrent protection circuit of the GaN HEMT device of the application;
fig. 6 is a waveform diagram of a Buck circuit of an embodiment of the overcurrent protection circuit of the GaN HEMT device of the present application.
Detailed Description
The application is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the application and are not limiting of the application. It should be noted that, for convenience of description, only the portions related to the present application are shown in the drawings.
It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be combined with each other. The application will be described in detail below with reference to the drawings in connection with embodiments.
The application provides an overcurrent protection circuit of a GaN HEMT device, which realizes accurate measurement of on-state voltage drop of the GaN HEMT device to be tested in a conducting stage under a high-speed switching state by adopting a voltage clamping circuit, compares a measured value with an overcurrent protection threshold of the GaN HEMT device to be tested in real time, and performs protection action.
The application relates to an overcurrent protection circuit of a GaN HEMT device, which comprises a GaN HEMT device to be tested, an active clamping circuit, a voltage signal processing circuit, a voltage comparison circuit and a driving circuit;
the GaN HEMT device to be tested is a single GaN HEMT switch tube or a GaN HEMT power module;
the active clamping circuit comprises a clamping switching tube and a clamping capacitor which are connected in series, and is connected with the GaN HEMT device to be tested in parallel and used for accurately measuring the conduction voltage drop of the GaN HEMT device to be tested in the conduction state;
the voltage signal processing circuit is a high-speed operational amplifier circuit which is connected with the clamping capacitor in parallel and is used for measuring the voltage at two ends of the clamping capacitor and carrying out filtering and amplifying treatment on the measured voltage signal;
the voltage comparison circuit is used for comparing the voltage signal processed by the voltage signal processing circuit with an overcurrent protection threshold of the GaN HEMT device to be tested, and controlling the working state of the driving circuit according to a comparison result;
and the driving circuit is used for driving the GaN HEMT device to be tested and the clamping switching tube.
In some preferred embodiments, the withstand voltage value of the clamp switching tube is not smaller than the withstand voltage value of the GaN HEMT device to be tested.
In order to more clearly describe the overcurrent protection circuit of the GaN HEMT device of the present application, each module in the embodiment of the present application is described in detail below with reference to fig. 1.
The overcurrent protection circuit of the GaN HEMT device comprises a GaN HEMT device 1 to be tested, an active clamp circuit 2, a voltage signal processing circuit 3, a voltage comparison circuit 4 and a driving circuit 5, wherein the detailed description of each module is as follows:
the GaN HEMT device 1 to be tested is a single GaN HEMT switch tube or a GaN HEMT power module.
The active clamp circuit 2 includes clamp switching transistors S connected in series 1 And clamp capacitor C 1 The active clamp circuit 2 is connected with the GaN HEMT device 1 to be tested in parallel and is used for accurately measuring the conduction voltage drop of the GaN HEMT device 1 to be tested in the conduction state.
Clamping switching tube S 1 The withstand voltage value of the GaN HEMT device 1 to be tested is not smaller than the withstand voltage value of the GaN HEMT device 1 to be tested. I.e. clamp switching tube S 1 The withstand voltage value of (2) can be larger than the withstand voltage value of the GaN HEMT device 1 to be tested, and can be equal to the withstand voltage value of the GaN HEMT device 1 to be tested.
Clamping switching tube S 1 The turn-on time of the device is delayed from that of the device 1 to be tested, and the turn-off time of the device is the same as that of the device 1 to be tested. Clamping switching tube S 1 The conduction time of the GaN HEMT device 1 to be tested is delayed, so that voltage oscillation of the GaN HEMT device 1 to be tested in the opening process can be avoided.
As shown in fig. 2, which is a typical switching waveform diagram of an embodiment of the overcurrent protection circuit of the GaN HEMT device of the present application, it can be seen from waveform comparison in the waveform diagram that the switching tube S is clamped 1 Delay turn-on than the GaN HEMT device 1 to be tested, so as to avoid voltage oscillation of the GaN HEMT device 1 to be tested in the turn-on process, clamp the switching tube S 1 And the GaN HEMT device 1 to be tested is turned off simultaneously.
Clamping capacitor C 1 Capacitance value of (2) and clamp switching tube S 1 The difference in capacitance of the parasitic output capacitance is greater than a set first threshold. Here is set upThe value of the first threshold is large, thereby clamping the capacitance C 1 The capacitance value of (2) is far greater than that of the clamp switch tube S 1 The capacitance of the parasitic output capacitance is, therefore, clamped switching tube S 1 The capacitance of the parasitic output capacitor is compared with that of the clamp capacitor C 1 The capacitance of (2) is negligible. Therefore, the GaN HEMT device 1 to be tested and the clamping switch tube S 1 In the off state, the voltage at two ends of the GaN HEMT device 1 to be tested is mainly applied to the clamping switch tube S 1 Clamping capacitor both ends C 1 Is lower.
At the switching frequency, clamp capacitor C 1 Capacitance value of (d) and clamp switching tube S 1 The difference in on-resistance values of (c) is greater than a set second threshold; the value of the second threshold is set to be large, thereby clamping the capacitor C 1 The capacitance resistance value of (2) is far greater than that of the clamp switching tube S 1 Therefore, the switch tube S is clamped 1 The on-resistance value of (C) is compared with the clamp capacitor C 1 The capacitance value of (2) is negligible.
When the GaN HEMT device 1 to be tested and the clamping switch tube S are used 1 When conducting, the voltage at two ends of the GaN HEMT device 1 to be tested is applied to the clamping capacitor C 1 Thereby being capable of accurately measuring the conduction voltage drop of the GaN HEMT device 1 to be measured.
The voltage signal processing circuit 3 is a high-speed operational amplifier circuit, and the high-speed operational amplifier circuit and the clamping capacitor C 1 Parallel connection for measuring clamp capacitance C 1 The voltage at both ends and the measured voltage signal are filtered and amplified.
In one embodiment of the present application, TLV3544 op amp is used as the high-speed op amp circuit, and the unit gain bandwidth thereof can reach 100MHz, so that the voltage signal processing circuit 3 has a higher bandwidth.
The voltage signal processed by the voltage signal processing circuit 3 is the conduction voltage drop of the GaN HEMT device 1 to be tested.
The conduction voltage drop of the GaN HEMT device 1 to be tested is used for overcurrent protection and current feedback of a control loop.
The voltage comparison circuit 4 is used for comparing the voltage signal processed by the voltage signal processing circuit 3 with an overcurrent protection threshold of the GaN HEMT device 1 to be tested, and controlling the working state of the driving circuit 5 according to the comparison result.
The voltage signal processing circuit 3 and the voltage comparing circuit 4 may be circuits built by discrete components or may be integrated circuit chips.
The overcurrent protection threshold of the GaN HEMT device 1 to be tested is determined according to the circuit design of a specific application, and the present application is not described in detail here.
The driving circuit 5 is used for driving the GaN HEMT device 1 to be tested and the clamping switching tube S 1 。
The driving circuit 5 may be a control chip with two outputs, or may be two independent driving chips with one output respectively.
In addition, the overcurrent protection circuit of the GaN HEMT device to be tested can be used for overcurrent protection of the GaN HEMT device to be tested, and can also be used for overcurrent detection of devices such as MOSFET, si IGBT and the like in overcurrent detection circuits of the devices such as MOSFET, si IGBT and the like.
As shown in fig. 3, an equivalent circuit for detecting current in an off state of a GaN HEMT device according to an embodiment of the over-current protection circuit for a GaN HEMT device of the present application is shown, and according to the circuit principle, the drain-source voltage v of the GaN HEMT device 1 to be tested in the off state is shown DS_off The calculation method is shown as the formula (1):
wherein v is C1 Clamping capacitor C for turn-off state of GaN HEMT device to be tested 1 Voltage across the two terminals, Z C1 For clamping capacitor C 1 Equivalent capacitive reactance of R DM Differential mode input impedance, Z, for an operational amplifier in a voltage signal processing circuit Coss_S1 For clamping the switching tube S 1 Is equivalent to the capacitive reactance of the parasitic output capacitance of (c).
Due to the clamp capacitance C 1 The capacitance value of (2) is far greater than that of the clamp switch tube S 1 Parasitic output capacitance C of (2) Coss_S1 And R is DM Generally greater than 1G omega, therefore, the GaN HEMT device 1 to be tested and the clampSwitch tube S 1 In the off state, satisfy R DM ＞＞Z C1 ，Z Coss_S1 ＞＞Z C1 Therefore, the formula (1) can be simplified to the formula (2):
as can be seen from (2), in the off state, the voltage at both ends of the GaN HEMT device 1 to be tested is mainly applied to the clamp switching tube S 1 Clamping capacitor C 1 The voltage across it is low.
As shown in fig. 4, an equivalent circuit for detecting current in the on state of a GaN HEMT device according to an embodiment of the overcurrent protection circuit for a GaN HEMT device of the present application is shown, and according to the circuit principle, the conduction voltage drop v in the on state of the GaN HEMT device 1 is measured DS_on The calculation method is shown as the formula (3):
wherein v' c1 Clamping capacitor C in on state of GaN HEMT device to be tested 1 Voltage across the two terminals, Z C1 For clamping capacitor C 1 Equivalent capacitive reactance of R DM Is the differential mode input impedance, R, of an operational amplifier in a voltage signal processing circuit DSon_S1 For clamping the switching tube S 1 On-resistance of (c).
Due to the clamp capacitance C 1 Is much larger than R DSon_S1 Therefore, in the GaN HEMT device 1 to be tested and the clamp switching tube S 1 In the on state, satisfyTherefore, the formula (3) can be simplified to the formula (4):
from the type(4) It can be seen that, in the on-off state, the voltage at both ends of the GaN HEMT device 1 to be tested is mainly applied to the clamp capacitor C 1 Therefore, the conduction voltage drop of the GaN HEMT device 1 to be tested can be accurately measured.
In one embodiment of the application, the bus voltage at two ends of the GaN HEMT device 1 to be tested is 400V, and the clamping capacitor C 1 0.2uF, clamp switch tube S 1 Parasitic output capacitance C of (2) Coss_S1 And on-resistance R DSon_S1 270pF and 1 omega respectively, on-resistance R of GaN HEMT device 1 to be tested DSon_Q1 0.1Ω, 1A conduction current, 1GΩ differential input impedance, 50kHz switching frequency, and the like, in the GaN HEMT device 1 and clamp switching tube S to be tested 1 Clamping capacitor C in turn-off state of GaN HEMT device to be tested 1 The voltage across the terminals is shown in formula (5):
clamping capacitor C in on state of GaN HEMT device to be tested 1 The voltage across the terminals is shown in formula (6):
the over-current protection circuit of the GaN HEMT device can be used for accurately measuring the conduction voltage drop of the GaN HEMT device to be measured.
It should be noted that the on-resistance of the GaN HEMT device will become larger along with the temperature rise, for example, the on-resistance of the GS66508T device at 25 ℃ and 20A is 0.051 Ω, and the on-resistance of the GaN HEMT device at 150 ℃ and 20A is 0.145 Ω, which is approximately three times different, so that the maximum current bearable by the GaN HEMT device at different temperatures is also different, if the direct current detection method is adopted, the current protection threshold needs to be changed at any time according to the temperature, and the method is complex and has poor reliability. The application adopts the method of directly detecting the voltage drop of the device tube, can not be affected by temperature, compensates the problem of protection misoperation caused by the change of the on-resistance of the GaN HEMT device along with the temperature, and can more accurately reflect the working and running states of the device compared with the direct detection of the current of the device, thereby having higher reliability.
On the other hand, due to the clamp switching tube S 1 The turn-on of the GaN HEMT device 1 to be tested avoids voltage oscillation in the turn-on process, so that the detection method provided by the application has higher reliability and stronger anti-interference capability.
The voltage signal processing circuit 3 clamps the capacitor C 1 After the low-pass filtering and amplifying treatment is carried out on the detected voltage, the voltage comparison circuit 4 compares the detected voltage with the overcurrent threshold of the GaN HEMT device 1 to be detected, and when the detected voltage reaches or is larger than the overcurrent threshold, a turn-off signal is sent to turn off the output of the driving circuit 5 so as to protect the GaN HEMT device and the circuit.
As shown in fig. 5, which is a block circuit structure diagram of an embodiment of the overcurrent protection circuit of the GaN HEMT device of the present application, fig. 6 is a corresponding block circuit waveform diagram, where the overcurrent protection circuit of the GaN HEMT device of the present application is simultaneously configured on the upper tube Q of the half-bridge circuit 1 And down tube Q 2 ，S 1 And C 1 Respectively are GaN HEMT devices Q to be tested 1 Clamp switching tube and clamp capacitor of (a), S 2 And C 2 Respectively are GaN HEMT devices Q to be tested 2 Clamp switching tube and clamp capacitance of (a). Clamping switching tube S 1 、S 2 Respectively compared with a GaN HEMT device Q to be tested 1 、Q 2 Delay turn-on.
The Buck circuit of fig. 5 operates as follows:
when the pipe Q is on 1 When turned on, clamp capacitor C 1 Accurately detect Q 1 And at Q 1 And clamp switching tube S 1 After the shut-off, C 1 The voltage on is kept at Q 1 Is a conduction voltage drop of (1); similarly, Q 2 When turned on, clamp capacitor C 2 Accurately detect Q 2 And at Q 2 And clamp switching tube S 2 After the shut-off, C 2 The voltage on is kept at Q 2 Is provided. Therefore, the overcurrent protection circuit of the GaN HEMT device provided by the application can be suitable for different circuit topologies such as single tube, half bridge and the like, and the working of the overcurrent protection circuit is realizedThe working state of the original circuit is not affected in the working process, and the circuit has strong circuit applicability.
It should be noted that, in the above embodiment, the over-current protection circuit of the GaN HEMT device is only illustrated by the division of the above functional modules, in practical application, the above functional allocation may be completed by different functional modules according to needs, that is, the modules in the embodiment of the present application are decomposed or combined, for example, the modules in the embodiment may be combined into one module, or may be further split into multiple sub-modules, so as to complete all or part of the functions described above. The names of the modules in the embodiments of the present application are merely for distinguishing the modules, and are not considered as undue limitations of the present application.
The terms "first," "second," and the like, are used for distinguishing between similar objects and not for describing a particular sequential or chronological order.
The terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus/apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus/apparatus.
Thus far, the technical solution of the present application has been described in connection with the preferred embodiments shown in the drawings, but it is easily understood by those skilled in the art that the scope of protection of the present application is not limited to these specific embodiments. Equivalent modifications and substitutions for related technical features may be made by those skilled in the art without departing from the principles of the present application, and such modifications and substitutions will be within the scope of the present application.
Claims (10)
1. The over-current protection circuit of the GaN HEMT device is characterized by comprising a GaN HEMT device to be tested, an active clamping circuit, a voltage signal processing circuit, a voltage comparison circuit and a driving circuit;
the GaN HEMT device to be tested is a single GaN HEMT switch tube or a GaN HEMT power module;
the active clamping circuit comprises a clamping switching tube and a clamping capacitor which are connected in series, and is connected with the GaN HEMT device to be tested in parallel and used for accurately measuring the conduction voltage drop of the GaN HEMT device to be tested in the conduction state;
the voltage signal processing circuit is a high-speed operational amplifier circuit which is connected with the clamping capacitor in parallel and is used for measuring the voltage at two ends of the clamping capacitor and carrying out filtering and amplifying treatment on the measured voltage signal;
the voltage comparison circuit is used for comparing the voltage signal processed by the voltage signal processing circuit with an overcurrent protection threshold of the GaN HEMT device to be tested, and controlling the working state of the driving circuit according to a comparison result;
and the driving circuit is used for driving the GaN HEMT device to be tested and the clamping switching tube.
2. The overcurrent protection circuit of the GaN HEMT device according to claim 1, wherein the voltage withstand value of the clamp switching tube is not smaller than that of the GaN HEMT device to be tested.
3. The GaN HEMT device over-current protection circuit of claim 2, wherein the clamp switching tube has a turn-on time that lags the GaN HEMT device under test and has a turn-off time that is the same as the GaN HEMT device under test.
4. The GaN HEMT device over-current protection circuit of claim 1, wherein a difference between a capacitance of the clamp capacitor and a capacitance of the clamp switching tube parasitic output capacitor is greater than a set first threshold.
5. The GaN HEMT device over-current protection circuit of claim 1, wherein a difference between a capacitive reactance value of the clamp capacitor and an on-resistance value of the clamp switching tube is greater than a set second threshold at a switching frequency;
when the GaN HEMT device to be tested and the clamping switch tube are conducted, voltages at two ends of the GaN HEMT device to be tested are applied to two ends of the clamping capacitor, so that conduction voltage drop of the GaN HEMT device to be tested is accurately measured.
6. The GaN HEMT device over-current protection circuit of claim 1, wherein said voltage signal processing circuit and said voltage comparison circuit are discrete component built circuits or integrated circuit chips.
7. The overcurrent protection circuit of the GaN HEMT device of claim 1, wherein the voltage signal processed by the voltage signal processing circuit is a turn-on voltage drop of the GaN HEMT device to be tested.
8. The GaN HEMT device over-current protection circuit of claim 7, wherein the on-voltage drop of the GaN HEMT device under test is further used to control current feedback of the loop.
9. The overcurrent protection circuit of the GaN HEMT device of claim 1, wherein the driving circuit is a control chip with two outputs or two independent driving chips with one output respectively.
10. The GaN HEMT device over-current protection circuit of claim 1, wherein the GaN HEMT device under test has a drain-source voltage v in its off-state DS_off And on-state voltage drop v DS_on The method comprises the following steps of:
wherein v is C1 And v' c1 Clamping capacitor C in turn-off state and turn-on state of GaN HEMT device to be tested 1 Voltage across the two terminals, Z C1 For clamping capacitor C 1 Equivalent capacitive reactance of R DM Differential mode input impedance, Z, for an operational amplifier in a voltage signal processing circuit Coss_S1 For clamping the switching tube S 1 Equivalent capacitive reactance of parasitic output capacitance of R DSon_S1 For clamping the switching tube S 1 On-resistance of (c).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111580276.8A CN114123099B (en) | 2021-12-22 | 2021-12-22 | Overcurrent protection circuit of GaN HEMT device |
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