CN111969561A - SiC MOSFET IPM rapid short-circuit protection circuit - Google Patents

SiC MOSFET IPM rapid short-circuit protection circuit Download PDF

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Publication number
CN111969561A
CN111969561A CN202010663118.8A CN202010663118A CN111969561A CN 111969561 A CN111969561 A CN 111969561A CN 202010663118 A CN202010663118 A CN 202010663118A CN 111969561 A CN111969561 A CN 111969561A
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circuit
sic mosfet
resistor
ipm
compensation
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孟昭亮
李静宇
高勇
杨媛
董志伟
胡梦阳
张泽涛
吕亚茹
方正鹏
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Xian Polytechnic University
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Xian Polytechnic University
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
    • H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
    • H02H7/1203—Circuits independent of the type of conversion
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H1/00—Details of emergency protective circuit arrangements
    • H02H1/0007—Details of emergency protective circuit arrangements concerning the detecting means

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)

Abstract

The invention discloses a SiC MOSFET IPM rapid short-circuit protection circuit which comprises a three-phase bridge type power unit consisting of 6 SiC MOSFETs, wherein a source electrode of each SiC MOSFET in the three-phase bridge type power unit and an alternating current output end of each SiC MOSFET are respectively connected with 1 shunt in series, the shunts are recorded as RS1-RS9, 3 shunts at the alternating current output end of each SiC MOSFET are used for detecting load short-circuit faults, and a source electrode shunt of each SiC MOSFET is used for detecting hard switch short-circuit faults. The invention solves the problem that the SiC MOSFET IPM is damaged due to overlong blanking time of a protection circuit in the prior art.

Description

SiC MOSFET IPM rapid short-circuit protection circuit
Technical Field
The invention belongs to the technical field of short-circuit protection of SiC MOSFET power modules, and particularly relates to a SiC MOSFET IPM rapid short-circuit protection circuit.
Background
The SiC MOSFET is used as a new generation power semiconductor device, has the characteristics of high blocking voltage, low loss and quick switching, and an intelligent power module of the SiC MOSFET encapsulates a power chip, a freewheeling diode chip and various driving protection circuits in the same insulating module, integrates functional modules such as a logic module, a control module, a detection module, a protection circuit, a temperature sensor, a current sensor and the like in the intelligent power module, and can send detection signals to a CPU or a DSP for processing. With the development of science and technology, SiC MOSFET IPM is widely used in various fields such as household appliances, frequency converters, electric locomotives, smart grids, and the like. Because the medium-high power SiC MOSFET IPM usually works in a severe environment with high voltage and large current, overcurrent faults often occur in actual operation, the SiC MOSFET overcurrent is divided into overload overcurrent and short-circuit overcurrent, the overload overcurrent cannot greatly affect the normal operation of the SiC MOSFET IPM in a short time, but when the short-circuit overcurrent occurs, the short-circuit tolerance time of the SiC MOSFET is only 3 mus and is shorter than 10 mus of the IGBT, so that in order to ensure the normal operation of the SiC MOSFET IPM, when the short circuit, the overcurrent, the overtemperature or the undervoltage occurs, the SiC MOSFET IPM module must have nanosecond-level short-circuit time for rapid detection, and then rapid protection is performed.
The conventional short-circuit current detection methods include a drain-source saturation voltage detection method and a drain current change rate di/dt detection method. The drain-source saturation voltage detection method does not need a current sensing device, only needs a simple diode and a comparison circuit, and is low in cost, but a blanking circuit exists in a protection circuit, so that a detection blind area of 1-2 mu s cannot detect overcurrent, and the safe use of the SiC MOSFET IPM is seriously threatened. The drain current change rate di/dt detection method can solve the problem of the dead zone, but LsS of the medium-power and high-power SiC MOSFET is small, and the value is difficult to confirm. Meanwhile, since the IPM is not provided with the auxiliary power source s and LsS, the di/dt detection method cannot be applied to the SiC MOSFET IPM detection protection circuit. The invention designs a high-power IPM new topology of a DBC (direct bond chip) bottom plate integrated shunt, uses ANSYS Q3D software to extract module parameters and shunt parasitic parameters, then uses ANSYS MAXWELL software to simulate the resistance and inductance changes of the shunt corresponding to the frequency changes, establishes an equivalent circuit model, and finally realizes the rapid non-blind area detection and protection of SiC MOSFET IPM load overcurrent and short circuit overcurrent through a current ID detection module.
Disclosure of Invention
The invention aims to provide a SiC MOSFET IPM rapid short-circuit protection circuit, which solves the problem that the SiC MOSFET IPM is damaged due to overlong blanking time of a protection circuit in the prior art.
The technical scheme adopted by the invention is that the SiC MOSFET IPM rapid short-circuit protection circuit comprises a three-phase bridge power unit consisting of 6 SiC MOSFETs, the source electrode of each SiC MOSFET in the three-phase bridge power unit and the alternating current output end of each SiC MOSFET are respectively connected in series with 1 shunt, which is recorded as a shunt RS1-RS9, 3 shunts at each alternating current output end are used for detecting load short-circuit faults, and the source electrode shunt of each SiC MOSFET is used for detecting hard switch short-circuit faults.
The present invention is also characterized in that,
a filter compensation circuit, an amplifying circuit, a comparison circuit, an isolation circuit and a driving circuit are sequentially arranged between the output end and the input end of the three-phase bridge type power unit, when a short-circuit fault is detected, the acquired voltage is rapidly increased, the acquired voltage is compared with a threshold voltage after passing through the filter compensation circuit and the amplifying circuit, an obtained driving signal is transmitted to the driving circuit through the isolation circuit, the SiC MOSFET to which a fault branch belongs is turned off by the driving circuit, and the SiC MOSFET IPM module is rapidly protected.
The diverters RS1-RS9 are all 0.333 milliohm, 9W diverters.
The specific structure of the filter compensation circuit is as follows: the filter compensation device comprises a compensation resistor Rcomp and a compensation capacitor Ccomp which are connected in series and then grounded to form a filter compensation device, wherein one end, which is not connected with the compensation capacitor Ccomp, of the compensation resistor Rcomp is connected with one end of a shunt, one end, which is not connected with the compensation capacitor Ccomp, of the compensation capacitor Ccomp is connected with the other end of the shunt, two ends of each shunt are respectively connected with one filter compensation device, and the connection position of the compensation resistor Rcomp and the compensation capacitor Ccomp is further connected with an amplifying circuit.
The specific structure of the amplifying circuit is as follows: one end of the resistor R1 is connected between the compensation resistor Rcomp and the compensation capacitor Ccomp of the filter compensation circuit, the other end of the resistor R1 is connected with the capacitor C1 in series and then grounded, the resistor R2 is connected with the two ends of the capacitor C1 in parallel, the resistor R2 is connected with the anode of the amplifier at the same time, the cathode of the amplifier is connected with the resistor R3 and then grounded, the cathode of the amplifier is connected with the resistor R4 and then connected with the output end of the amplifier, the output end of the amplifier is connected with the resistor R5 and then grounded, and the output end of the amplifier is connected with the input end of.
The specific structure of the comparison circuit is as follows: the positive pole of the comparator is connected with the amplifying circuit, the negative pole of the comparator is connected with the resistor R6 and then grounded, the negative pole of the comparator is also connected with the resistor R7 and then connected with the positive 20V voltage, the output end of the comparator is connected with the positive 5V voltage through the resistor R8, and the output end of the comparator is connected with the isolating circuit.
The specific structure of the isolation circuit is as follows: the light-emitting diode and the triode form optical coupling isolation, wherein the anode of the light-emitting diode is connected with the output of the comparison circuit, the cathode of the light-emitting diode is connected with the resistor R9 and then grounded, the collector of the triode is connected to positive 5V voltage through the resistor R10 and then the emitter of the triode is connected with the driving circuit.
The specific structure of the driving circuit is as follows: the PWM wave pulse output is connected with an NPN type triode Q1 through an inverter and then grounded, the PWM wave pulse output is also connected with an NPN type triode Q2 and a PNP type triode Q3 respectively, the collector electrode of the NPN type triode Q2 is connected with positive 20V voltage, the emitter electrode of the NPN type triode Q2 is connected with the emitter electrode of the PNP type triode Q3, the collector electrode of the PNP type triode Q3 is connected with negative 5V voltage, the emitter electrode of the NPN type triode Q2 and the emitter electrode of the PNP type triode Q3 are connected with the grid electrode of the SiC MOSFET through a resistor R12, and the base electrode of the NPN type triode Q1 is connected with the emitter electrode of the triode in the isolation circuit.
The method has the advantages that the traditional saturation voltage detection method has dead zone time, the whole short-circuit protection process time is long, and the SiC MOSFET IPM module is easily damaged. According to the SiC MOSFET IPM quick short-circuit protection circuit, parasitic parameters of a current divider are extracted by using ANSYS Q3D software, and RC filter compensation is performed, so that the parasitic parameters are reduced. Resistance and inductance changes of the current divider corresponding to frequency changes are simulated by using ANSYS MAXWELL software, and the influence of the on-off frequency of the SiC MOSFET on internal integrated resistance and parasitic inductance can be seen. Therefore, the optimal overcurrent detection point of the shunt is selected, and the high-precision threshold voltage in a small-amplitude range can be obtained. The shunt with known resistance value is connected in series with the source electrode of the SiC MOSFET, and the magnitude of the current to be measured can be obtained by measuring the voltage at the two ends of the shunt, so that the nanosecond-level hard switch short-circuit fault and load short-circuit fault non-blind area detection and protection can be realized.
Drawings
Fig. 1 is a new high power IPM topology of the current divider of the present invention.
FIG. 2 is a diagram of a SiC MOSFET IPM power cell topology of the present invention.
Fig. 3 is a circuit for measuring the precise resistance of the shunt according to the present invention.
Fig. 4 is a circuit diagram of RC filter compensation for shunt parasitic inductance according to the present invention.
Fig. 5 is a circuit diagram of a dead zone sensor without current detection in accordance with the present invention.
Fig. 6 is a graph of the change in frequency of the SiC MOSFET of the present invention versus the change in shunt resistance and inductance.
FIG. 7(a) is a diagram of a shunt detection method of the present invention for detecting hard-switched short circuits.
FIG. 7(b) is a diagram of a shunt detection method of detecting a load short circuit according to the present invention.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
The invention discloses a SiC MOSFET IPM quick short-circuit protection circuit which is structurally shown in figures 1-2 and comprises a three-phase bridge type power unit consisting of 6 SiC MOSFETs, wherein a source electrode of each SiC MOSFET and an alternating current output end of each phase of the three-phase bridge type power unit are respectively connected with 1 shunt in series and recorded as a shunt RS1-RS9, 3 shunts of each phase of the alternating current output end are used for detecting load short-circuit faults, and a source shunt of each SiC MOSFET is used for detecting hard switch short-circuit faults.
A filter compensation circuit, an amplifying circuit, a comparison circuit, an isolation circuit and a driving circuit are sequentially arranged between the output end and the input end of the three-phase bridge type power unit, when a short-circuit fault is detected, the acquired voltage is rapidly increased, the acquired voltage is compared with a threshold voltage after passing through the filter compensation circuit and the amplifying circuit, an obtained driving signal is transmitted to the driving circuit through the isolation circuit, the SiC MOSFET to which a fault branch belongs is turned off by the driving circuit, and the SiC MOSFET IPM module is rapidly protected.
The diverters RS1-RS9 are all 0.333 milliohm, 9W diverters.
As shown in fig. 5, the specific structure of the filter compensation circuit is as follows: the filter compensation device comprises a compensation resistor Rcomp and a compensation capacitor Ccomp which are connected in series and then grounded to form a filter compensation device, wherein one end, which is not connected with the compensation capacitor Ccomp, of the compensation resistor Rcomp is connected with one end of a shunt, one end, which is not connected with the compensation capacitor Ccomp, of the compensation capacitor Ccomp is connected with the other end of the shunt, two ends of each shunt are respectively connected with one filter compensation device, and the connection position of the compensation resistor Rcomp and the compensation capacitor Ccomp is further connected with an amplifying circuit.
The specific structure of the amplifying circuit is as follows: one end of the resistor R1 is connected between the compensation resistor Rcomp and the compensation capacitor Ccomp of the filter compensation circuit, the other end of the resistor R1 is connected with the capacitor C1 in series and then grounded, the resistor R2 is connected with the two ends of the capacitor C1 in parallel, the resistor R2 is connected with the anode of the amplifier at the same time, the cathode of the amplifier is connected with the resistor R3 and then grounded, the cathode of the amplifier is connected with the resistor R4 and then connected with the output end of the amplifier, the output end of the amplifier is connected with the resistor R5 and then grounded, and the output end of the amplifier is connected with the input end of.
The specific structure of the comparison circuit is as follows: the positive pole of the comparator is connected with the amplifying circuit, the negative pole of the comparator is connected with the resistor R6 and then grounded, the negative pole of the comparator is also connected with the resistor R7 and then connected with the positive 20V voltage, the output end of the comparator is connected with the positive 5V voltage through the resistor R8, and the output end of the comparator is connected with the isolating circuit.
The specific structure of the isolation circuit is as follows: the light-emitting diode and the triode form optical coupling isolation, wherein the anode of the light-emitting diode is connected with the output of the comparison circuit, the cathode of the light-emitting diode is connected with the resistor R9 and then grounded, the collector of the triode is connected to positive 5V voltage through the resistor R10 and then the emitter of the triode is connected with the driving circuit.
The specific structure of the driving circuit is as follows: the PWM wave pulse output is connected with an NPN type triode Q1 through an inverter and then grounded, the PWM wave pulse output is also connected with an NPN type triode Q2 and a PNP type triode Q3 respectively, the collector electrode of the NPN type triode Q2 is connected with positive 20V voltage, the emitter electrode of the NPN type triode Q2 is connected with the emitter electrode of the PNP type triode Q3, the collector electrode of the PNP type triode Q3 is connected with negative 5V voltage, the emitter electrode of the NPN type triode Q2 and the emitter electrode of the PNP type triode Q3 are connected with the grid electrode of the SiC MOSFET through a resistor R12, and the base electrode of the NPN type triode Q1 is connected with the emitter electrode of the triode in the isolation circuit.
Taking a trial-produced SiC MOSFET IPM integrated with a shunt as an example, the SiC MOSFET has a rated voltage of 1200V and a rated current of 180A. Firstly, a SiC MOSFET IPM power unit topological graph is designed, and the power unit topological graph is shown in figure 2. The source electrode of each SiC MOSFET in the power unit and each alternating current output end are connected with 1 shunt with 0.333 mOhm and 9W in series, and the power unit integrates 9 shunts RS1-RS 9. In order to accurately obtain the resistance value of each shunt, the invention designs a shunt accurate resistance value measuring circuit as shown in figure 3. Taking the bridge arm 1 as an example as a measurement object, adding a direct current source outside the bridge arm, wherein the direct current source and the measured bridge arm form a loop, two SiC MOSFETs in the bridge arm are in an off state, and a current I generated by the direct current source forms a path through two shunts and a freewheeling diode in the bridge arm. The current I is loaded from DC10A, increasing stepwise every 5A up to 180A. By measuring voltage V across the shuntshuntThe accurate resistance value of the shunt can be obtained by dividing I, and the analysis on the data shows that the accurate resistance value of the shunt is 0.34 milliohm.
Since all shunts generate parasitic inductance, the measured voltage of each shunt includes the voltage across the resistance and the voltage across the parasitic inductance. When the SiC MOSFET is turned on and off rapidly, the voltage across the parasitic inductance of the shunt in which the SiC MOSFET is located may be large due to the large rate of change of the current, resulting in an erroneous measurement result. A frequency response compensation circuit comprising an RC filter is connected in parallel across each shunt to improve the measurement characteristics of the shunt, the RC filter compensation circuit being shown in figure 4, so that the voltage across the parasitic inductance can be cancelled by the voltage across the RC filter, so that the actual measured voltage is the voltage across the shunt resistance. The voltage across the shunt can be indicative of the current I flowing through the shuntDThe size of (2).
Taking any one SiC MOSFET as an example, the sensor circuit without current detection blind area is shown in fig. 5, a shunt on the source of the SiC MOSFET is connected with an amplifying circuit after passing through an RC filter circuit, and then is connected with a comparison circuit, and a driving signal obtained after passing through the comparison circuit is transmitted to a driving circuit through optical coupling isolation, and then is protected. Current I of SiC MOSFETDAfter filtering compensation, the voltage is converted into voltage, the voltage is compared with a set threshold value after passing through an amplifying circuit, if the voltage is greater than the set threshold value, an output signal is inverted, a driving circuit is turned off, the SiC MOSFET IPM module is protected rapidly, and if the voltage is less than the set threshold value, the circuit works normally. Since the resistance value of the shunt is 0.34m omega, the rated current of the SiC MOSFET is 180A, 2 times of the rated current is selected as a threshold value, the amplification factor is 21 times, and the conversion voltage is 0.00034 multiplied by 180 multiplied by 3 multiplied by 21 to 3.86V. Therefore, when the conversion voltage is larger than 3.86V, the drive is protected.
The short-circuit overcurrent faults of the SiC MOSFET comprise hard switch short-circuit faults and load short-circuit faults. The hard switch short circuit fault is a short circuit in the IPM bridge arms of the SiC MOSFET and is caused by misoperation of a driving circuit or damage of the SiC MOSFET, and the load short circuit fault is a short circuit between the IPM bridge arms of the SiC MOSFET, generally a load short circuit or a ground short circuit. The two faults are respectively detected by using a DBC (direct bond pad) bottom plate internal integrated shunt detection method, and short-circuit waveforms are obtained as shown in fig. 7(a) and 7 (b). As can be seen from the figure, the invention has no detection blind area in the short circuit detection. In the hard switch short circuit, the detection time is only 300ns, and the total time is 500 ns; in the load short circuit, the fault detection time of the invention is only 400ns, the short circuit state is not required to be entered, and the module is turned off only in 600 ns.
Therefore, the DBC (direct bond chip) bottom plate integrated shunt detection method can realize nanosecond-level non-blind-area rapid detection and protection of the SiC MOSFET IPM.

Claims (8)

1. The utility model provides a SiC MOSFET IPM short-circuit protection circuit fast which characterized in that, includes the three-phase bridge power unit that comprises 6 SiC MOSFETs, and the source and every alternating current output of every SiC MOSFET in the three-phase bridge power unit all connect in series 1 shunt, record as shunt RS1-RS9, and 3 shunts of every alternating current output are used for detecting the load short-circuit fault, and the source shunt of every SiC MOSFET is used for detecting hard switch short-circuit fault.
2. The SiC MOSFET IPM fast short-circuit protection circuit as claimed in claim 1, wherein a filter compensation circuit, an amplification circuit, a comparison circuit, an isolation circuit and a driving circuit are sequentially disposed between the output terminal and the input terminal of the three-phase bridge power unit, when a short-circuit fault is detected, the collected voltage is rapidly increased, the collected voltage is compared with a threshold voltage after passing through the filter compensation circuit and the amplification circuit, an obtained driving signal is transmitted to the driving circuit through the isolation circuit, so that the driving circuit turns off the SiC MOSFET to which the fault branch belongs, and the SiC MOSFET IPM module is fast protected.
3. The SiC mosfet ipm fast short circuit protection circuit of claim 1, wherein said shunts RS1-RS9 are all 0.333 milliohm, 9W shunts.
4. The SiC MOSFET IPM fast short-circuit protection circuit of claim 2, wherein the filter compensation circuit is specifically configured as follows: the filter compensation device comprises a compensation resistor Rcomp and a compensation capacitor Ccomp which are connected in series and then grounded to form a filter compensation device, wherein one end, which is not connected with the compensation capacitor Ccomp, of the compensation resistor Rcomp is connected with one end of a shunt, one end, which is not connected with the compensation capacitor Ccomp, of the compensation capacitor Ccomp is connected with the other end of the shunt, two ends of each shunt are respectively connected with one filter compensation device, and the connection position of the compensation resistor Rcomp and the compensation capacitor Ccomp is further connected with an amplifying circuit.
5. The SiC MOSFET IPM fast short circuit protection circuit of claim 4, wherein the specific structure of the amplifying circuit is: one end of the resistor R1 is connected between the compensation resistor Rcomp and the compensation capacitor Ccomp of the filter compensation circuit, the other end of the resistor R1 is connected with the capacitor C1 in series and then grounded, the resistor R2 is connected with the two ends of the capacitor C1 in parallel, the resistor R2 is connected with the anode of the amplifier at the same time, the cathode of the amplifier is connected with the resistor R3 and then grounded, the cathode of the amplifier is connected with the resistor R4 and then connected with the output end of the amplifier, the output end of the amplifier is connected with the resistor R5 and then grounded, and the output end of the amplifier is connected with the input end of.
6. The SiC MOSFET IPM fast short circuit protection circuit of claim 2, wherein the comparison circuit is specifically configured as follows: the positive pole of the comparator is connected with the amplifying circuit, the negative pole of the comparator is connected with the resistor R6 and then grounded, the negative pole of the comparator is also connected with the resistor R7 and then connected with the positive 20V voltage, the output end of the comparator is connected with the positive 5V voltage through the resistor R8, and the output end of the comparator is connected with the isolating circuit.
7. The SiC MOSFET IPM fast short circuit protection circuit of claim 2, wherein the isolation circuit has a specific structure: the light-emitting diode and the triode form optical coupling isolation, wherein the anode of the light-emitting diode is connected with the output of the comparison circuit, the cathode of the light-emitting diode is connected with the resistor R9 and then grounded, the collector of the triode is connected to positive 5V voltage through the resistor R10 and then the emitter of the triode is connected with the driving circuit.
8. The SiC MOSFET IPM fast short circuit protection circuit of claim 2, wherein the specific structure of the driving circuit is: the PWM wave pulse output is connected with an NPN type triode Q1 through an inverter and then grounded, the PWM wave pulse output is also connected with an NPN type triode Q2 and a PNP type triode Q3 respectively, the collector electrode of the NPN type triode Q2 is connected with positive 20V voltage, the emitter electrode of the NPN type triode Q2 is connected with the emitter electrode of the PNP type triode Q3, the collector electrode of the PNP type triode Q3 is connected with negative 5V voltage, the emitter electrode of the NPN type triode Q2 and the emitter electrode of the PNP type triode Q3 are connected with the grid electrode of the SiC MOSFET through a resistor R12, and the base electrode of the NPN type triode Q1 is connected with the emitter electrode of the triode in the isolation circuit.
CN202010663118.8A 2020-07-10 2020-07-10 SiC MOSFET IPM rapid short-circuit protection circuit Pending CN111969561A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113331493A (en) * 2021-05-08 2021-09-03 铂德（深圳）科技有限公司 Short-circuit protection circuit and electron cigarette

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202094613U (en) * 2011-06-02 2011-12-28 深圳市汇川技术股份有限公司 IGBT current foldback circuit
CN105811942A (en) * 2014-12-30 2016-07-27 国家电网公司 MOSFET driving circuit having over-current protection function and application method thereof
CN111130518A (en) * 2019-12-03 2020-05-08 南京工程学院 Quick short-circuit protection circuit of SiC MOSFET

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202094613U (en) * 2011-06-02 2011-12-28 深圳市汇川技术股份有限公司 IGBT current foldback circuit
CN105811942A (en) * 2014-12-30 2016-07-27 国家电网公司 MOSFET driving circuit having over-current protection function and application method thereof
CN111130518A (en) * 2019-12-03 2020-05-08 南京工程学院 Quick short-circuit protection circuit of SiC MOSFET

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113331493A (en) * 2021-05-08 2021-09-03 铂德（深圳）科技有限公司 Short-circuit protection circuit and electron cigarette

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Application publication date: 20201120