CN112034320A - IGBT junction temperature detection system and detection method based on turn-off delay time - Google Patents
IGBT junction temperature detection system and detection method based on turn-off delay time Download PDFInfo
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Abstract
The invention discloses a junction temperature measuring system and method based on IGBT turn-off delay timeeEThe collector comprises an acquisition unit, a collector current acquisition unit and an emitter voltage acquisition unit. The method comprises the following steps: calibrating off-line data of IGBT turn-off delay time, collector current and junction temperature in an off-line test mode, and then fitting; and measuring the emitter current and turn-off delay time of the IGBT on line, and combining the relation between the junction temperature of the IGBT, the turn-off delay time and the collector current obtained by fitting to realize the on-line detection of the junction temperature of the IGBT. The invention carries out linearization processing on the relation between the IGBT turn-off delay time and the junction temperature and establishes a function model of the slope and intercept of the IGBT on the forward conducting current of the IGBT. Converting the time signal into a digital signal by using a time-to-digital conversion technology; only the induced voltage and the emitter current on the emitter parasitic inductance need to be acquired, and the method has the advantages of simple modeling, easy measurement, high precision and the like.
Description
Technical Field
The invention relates to a junction temperature detection system and a junction temperature detection method, which are applied to the technical field of performance measurement of power electronic devices.
Background
In recent years, with the development of social economy, the electric energy conversion technology is widely applied to the fields of new energy power generation, power transmission, transportation and the like. As the most widely used power device in a high-power electronic converter, the IGBT needs to face more complicated working conditions. The high safety requirement of the system further enables the reliability of the power device to become one of research hotspots, and the improvement of the reliability of the IGBT has important significance for ensuring the safe operation of a high-power electronic system. Studies have shown that 31% of power electronic converter failures are caused by failure of the power electronics; wherein 60% of power electronics failures are caused by excess temperature; moreover, the probability of device failure doubles for every 10 ℃ increase in junction temperature of the power electronic device. Too high a junction temperature can lead to various problems. When the junction temperature is higher, the voltage resistance of the device is reduced, and the device is easy to cause overvoltage breakdown and failure; when the junction temperature is high, the thermal stress between materials in the device is increased, and welding layer loosening and bonding wire fracture are easily caused, so that the device is failed. Therefore, the detection of the junction temperature in the operating process of the IGBT is important for improving the reliability of the IGBT.
Currently, there are three main types of junction temperature measurement systems for IGBTs.
The first system uses the principle of direct measurement, and utilizes the temperature of thermal elements such as thermal resistors, thermocouples or diodes implanted in the IGBT module to estimate the temperature at the IGBT chip. Because the temperature at the chip and the thermistor are not exactly the same, and the thermistor has a longer response time to temperature, the dynamic performance is poor.
The second system is non-contact, the IGBT junction temperature is measured by adopting a thermal imaging technology, the method can obtain higher precision, but the packaging structure of the IGBT needs to be damaged, and the method is destructive and only suitable for laboratory measurement.
A third type of system measures junction temperature using the temperature sensitive inductive parameters of the device itself. Typical thermal inductance parameters include saturation voltage drop of the IGBT, voltage drop rate when the IGBT is turned on, current drop rate when the IGBT is turned off, peak value of miller plateau voltage, peak value of IGBT turn-on gate current, turn-on delay time, turn-off delay time, and the like. The method based on measuring the saturation voltage drop of the IGBT is divided into a large current injection method and a small current injection method, wherein the two methods are that a specific current value is injected into the IGBT in a clearance when a system stops running, junction temperature is estimated according to the relation between the saturation voltage drop and the junction temperature, and the method is not suitable for online measurement; the IGBT junction temperature measurement system based on measurement of grid signals or turn-on delay time leads to low sensitivity and poor accuracy of measurement results. Research shows that the relation between the turn-off delay time and the junction temperature of the IGBT is the most linear, and the sensitivity is the highest.
The existing method for extracting the turn-off delay time of the IGBT collects the grid voltage and the emitter voltage signal of the IGBT and compares the grid voltage and the emitter voltage signal with a threshold value respectively to obtain the starting point and the ending point of the turn-off delay. The method has a large detection amount, and an external circuit needs extremely high bandwidth. In addition, when the relation between the turn-off delay time of the IGBT and the collector current is calibrated offline, the linear relation between the junction temperature and the turn-off delay time needs to be measured under a specific collector current.
The invention aims to overcome the defects of the existing IGBT junction temperature detection method, and carries out linearization processing on the relation between the IGBT turn-off delay time and the junction temperature, and establishes a function model of the slope and intercept of the IGBT junction temperature detection method with respect to the IGBT collector current. And converting the time signal into a digital signal by using a time-to-digital conversion technology. The method only needs to collect the induced voltage and the emitter current on the emitter parasitic inductance, and has the advantages of simple modeling, easy measurement, high precision and the like.
Disclosure of Invention
In order to solve the problems in the prior art, the invention aims to overcome the defects in the prior art and provide a system and a method for detecting the junction temperature of an IGBT based on turn-off delay time.
In order to achieve the purpose of the invention, the invention adopts the following technical scheme:
an IGBT junction temperature detection system based on turn-off delay time comprises an IGBT module to be detected, wherein the IGBT module to be detected is respectively connected with an IGBT control unit and a voltage VeEThe collector comprises an acquisition unit, a collector current acquisition unit and a collector-emitter voltage acquisition unit;
the IGBT module to be tested is used as a test object and provides a test port;
the voltage VeEThe acquisition unit is used for acquiring the auxiliary emitter e of the IGBT module to be tested andpotential difference V between emitters EeE；
The collector current collecting unit is used for collecting collector current i of the IGBT module to be testedc；
The collector-emitter voltage acquisition unit is used for acquiring the potential difference V between the collector C and the emitter E of the IGBT module to be testedCE；
Said voltage VeEThe acquisition unit is connected with a delay time measuring unit through a starting point time base comparator and a finishing point time base comparator;
the start time base comparator and the end time base comparator are based on VeERespectively acquiring initial and ending pulse signals of a turn-off delay stage of the IGBT module to be detected;
the delay time measuring unit is used for measuring the turn-off delay time of the IGBT module to be tested according to the start and stop information of the turn-off delay stage;
the IGBT control unit is used for controlling the on-off of the IGBT module to be tested and controlling the work of the collector current acquisition unit, the collector and emitter voltage acquisition unit and the delay time measurement unit;
the collector-emitter voltage acquisition unit, the collector current acquisition unit and the delay time measurement unit are connected with a junction temperature calculation unit and used for processing data and calculating the junction temperature of the IGBT module to be measured.
Preferably, the IGBT control unit is connected with the IGBT module to be tested and is connected with the collector current collecting unit, the collector-emitter voltage collecting unit and the delay time calculating unit. The collector current collecting unit and the emitter voltage collecting unit respectively collect emitter current of the IGBT module to be tested and collector emitter voltage of the IGBT module to be tested; voltage VeEThe collecting unit collects the voltage of the emitting electrode and the auxiliary emitting electrode of the IGBT module to be detected and is connected with the starting point time base comparator and the end point time base comparator; the delay time measuring unit receives the outputs of the starting time base comparator and the ending time base comparator; and the junction temperature calculating unit receives the signals of the collector current collecting unit and the collector-emitter voltage collecting unit and the output of the delay time measuring unit.
Preferably, the voltage VeEThe acquisition unit comprises a voltage attenuation circuit, a voltage follower and a signal offset circuit which are connected in sequence.
Preferably, the collector current collecting unit comprises a current sensor, a shaping circuit and a signal output which are connected in sequence.
Preferably, the collector-emitter voltage collecting unit comprises a voltage sensor, a shaping circuit and a signal output which are connected in sequence.
Preferably, the turn-off delay time calculation unit is implemented by a time-to-digital converter chip.
The invention relates to an IGBT junction temperature detection method based on turn-off delay time, which is operated by adopting the IGBT junction temperature detection system based on the turn-off delay time, and the control operation process through a control unit comprises the following steps:
1) establishing a data model: setting an operation condition under the condition that the maximum working voltage, the maximum working current and the maximum operation junction temperature of the IGBT module are not exceeded; for any operation condition, corresponding to a group of data about direct current bus voltage, IGBT module collector current and IGBT module operation junction temperature, acquiring voltage signals between two ends of an IGBT module power emitter and an auxiliary emitter under the operation condition, and extracting a time difference between two amplitude values of the voltage signals in a transient process of switching the IGBT module from a conduction state to a blocking state, namely turn-off delay time;
2) fixing bus voltage and collector current, changing junction temperature of the IGBT module, collecting turn-off delay time of the IGBT, modeling the relation between the turn-off delay time and the junction temperature, and solving the change rate and intercept of the turn-off delay time relative to the operating junction temperature of the IGBT module under the conditions of specific bus voltage and specific collector current; under the condition of different collector currents, repeating the steps, and further establishing a correlation function model of the slope of the turn-off delay time relative to the operating junction temperature of the IGBT module and the collector current of the IGBT module under the specific bus voltage, and a correlation function model of the turn-off delay time relative to the intercept of the operating junction temperature of the IGBT module and the collector current of the IGBT module;
3) collecting collector current of the IGBT module before the drive circuit controls the IGBT module to be switched from a conducting state to a blocking state; collecting a voltage signal between two ends of a power emitter and an auxiliary emitter of the IGBT module when the drive circuit controls the IGBT module to be switched from a conducting state to a blocking state, and extracting a time difference between two peak values of the voltage signal in a transient process that the IGBT module is switched from the conducting state to the blocking state; and then according to the collector current and turn-off delay time of the IGBT module collected in the transient process of switching the IGBT module from the conduction state to the blocking state, calculating or looking up a table to reversely deduce and obtain the running junction temperature of the IGBT module through a function model.
Preferably, in the step 2), the correlation function model is composed of rational functions of turn-off delay time of each direct-current bus voltage with respect to collector current of the IGBT module and operating junction temperature of the IGBT module; for any direct current bus voltage, rational functions of the direct current bus voltage with respect to turn-off delay time, collector current of the IGBT module, and operating junction temperature of the IGBT module are as follows:
wherein, a1、b1、c1、d1、a2、b2、c2、d2The constant value can be obtained by fitting data after off-line calibration. I iscFor collector current before turn-off of IGBT, TjIs the junction temperature, t, of the IGBTdoffFor the turn-off delay time of the IGBT, the slope refers to
Intercept means
Compared with the prior art, the invention has the following prominent substantive characteristics and remarkable advantages:
1. the system carries out linearization processing on the relation between the IGBT turn-off delay time and the junction temperature, establishes a function model of the slope and the intercept of the IGBT on the collector current of the IGBT, and converts a time signal into a digital signal by using a time digital conversion technology.
2. The method has simple process, easy realization and very obvious economic benefit.
Drawings
FIG. 1 is a schematic diagram of a detection system.
FIG. 2 shows the voltage VeEAnd collecting a circuit diagram of the unit.
Fig. 3 is a schematic structural diagram of the current collecting unit.
Fig. 4 is a schematic structural diagram of the voltage acquisition unit.
Fig. 5 is a schematic diagram of a control process of the control unit.
Fig. 6 is a schematic diagram of the mechanism of the induced voltage on the parasitic inductance of the emitter.
FIG. 7 shows different collector currents tdoff＝f(Tj) Is shown in linear relationship.
FIG. 8 shows different collector currents tdoff＝f(Tj) A slope of the linear relationship of (a).
FIG. 9 shows different collector currents tdoff＝f(Tj) Intercept plot of linear relationship of (c).
Detailed Description
The above-described scheme is further illustrated below with reference to specific embodiments, which are detailed below:
the first embodiment is as follows:
in this embodiment, referring to fig. 1, an IGBT junction temperature detection system based on turn-off delay time includes an IGBT module 1 to be detected, where the IGBT module 1 to be detected is connected to an IGBT control unit 9 and a voltage V, respectivelyeEThe collector comprises an acquisition unit 2, a collector current acquisition unit 3 and a collector-emitter voltage acquisition unit 4;
the IGBT module 1 to be tested is used as a test object and provides a test port;
the voltage VeEThe collecting unit 2 is used for collecting the potential difference V between the auxiliary emitter E and the emitter E of the IGBT module 1 to be testedeE；
The collector current collecting unit 3 is used for collecting the collector current i of the IGBT module 1 to be testedc；
The collector-emitter voltage acquisition unit 4 is used for acquiring the potential difference V between the collector C and the emitter E of the IGBT module 1 to be testedCE；
Said voltage VeEThe acquisition unit 2 is connected with a delay time measuring unit 7 through a starting point time base comparator 5 and an end point time base comparator 6;
the starting time base comparator 5 and the ending time base comparator 6 are based on VeERespectively acquiring initial and ending pulse signals of a turn-off delay stage of the IGBT module 1 to be detected;
the delay time measuring unit 7 is used for measuring the turn-off delay time of the IGBT module 1 to be tested according to the start and stop information of the turn-off delay stage;
the IGBT control unit 9 is used for controlling the on-off of the IGBT module 1 to be tested and controlling the work of the collector current acquisition unit 3, the collector-emitter voltage acquisition unit 4 and the delay time measurement unit 7;
the collector-emitter voltage acquisition unit 4, the collector current acquisition unit 3 and the delay time measurement unit 7 are connected with a junction temperature calculation unit 8, and are used for processing data and calculating the junction temperature of the IGBT module 1 to be tested.
Example two:
this embodiment is substantially the same as the first embodiment, and is characterized in that:
in the present embodiment, the voltage V is shown in fig. 2 to 9eEThe acquisition unit 2 comprises a voltage attenuation circuit 2-1, a voltage follower 2-2 and a signal offset circuit 2-3 which are connected in sequence. The collector current acquisition unit 3 comprises a current sensor 3-1, a shaping circuit 3-2 and a signal output 3-3 which are connected in sequence. The collector-emitter voltage acquisition unit 4 comprises a voltage sensor 4-1, a shaping circuit 4-2 and a signal output 4-3 which are connected in sequence. The turn-off delay time calculation unit 7 is startedInter-digital converter chip implementation.
Example three:
this embodiment is substantially the same as the previous embodiment, and is characterized in that:
in this embodiment, referring to fig. 5, a method for detecting IGBT junction temperature based on turn-off delay time is implemented by using the system for detecting IGBT junction temperature based on turn-off delay time according to the first embodiment, and a control operation flow through the control unit includes the following steps:
1) establishing a data model:
setting an operation condition under the condition that the maximum working voltage, the maximum working current and the maximum operation junction temperature of the IGBT module are not exceeded; for any operation condition, corresponding to a group of data about direct current bus voltage, IGBT module collector current and IGBT module operation junction temperature, acquiring voltage signals between two ends of an IGBT module power emitter and an auxiliary emitter under the operation condition, and extracting a time difference between two amplitude values of the voltage signals in a transient process of switching the IGBT module from a conduction state to a blocking state, namely turn-off delay time;
2) fixing bus voltage and collector current, changing junction temperature of the IGBT module, collecting turn-off delay time of the IGBT, modeling the relation between the turn-off delay time and the junction temperature, and solving the change rate and intercept of the turn-off delay time relative to the operating junction temperature of the IGBT module under the conditions of specific bus voltage and specific collector current; under the condition of different collector currents, repeating the steps, and further establishing a correlation function model of the slope of the turn-off delay time relative to the operating junction temperature of the IGBT module and the collector current of the IGBT module under the specific bus voltage, and a correlation function model of the turn-off delay time relative to the intercept of the operating junction temperature of the IGBT module and the collector current of the IGBT module;
3) collecting collector current of the IGBT module before the drive circuit controls the IGBT module to be switched from a conducting state to a blocking state; collecting a voltage signal between two ends of a power emitter and an auxiliary emitter of the IGBT module when the drive circuit controls the IGBT module to be switched from a conducting state to a blocking state, and extracting a time difference between two peak values of the voltage signal in a transient process that the IGBT module is switched from the conducting state to the blocking state; and then according to the collector current and turn-off delay time of the IGBT module collected in the transient process of switching the IGBT module from the conduction state to the blocking state, calculating or looking up a table to reversely deduce and obtain the running junction temperature of the IGBT module through a function model.
Example four:
this embodiment is substantially the same as the previous embodiment, and is characterized in that:
in this embodiment, in the step 2), the correlation function model is composed of rational functions of turn-off delay time with respect to collector current of the IGBT module and operating junction temperature of the IGBT module under each dc bus voltage; for any direct current bus voltage, rational functions of the direct current bus voltage with respect to turn-off delay time, collector current of the IGBT module, and operating junction temperature of the IGBT module are as follows:
wherein, a1、b1、c1、d1、a2、b2、c2、d2The constant value can be obtained by fitting data after off-line calibration. I iscFor collector current before turn-off of IGBT, TjIs the junction temperature, t, of the IGBTdoffFor the turn-off delay time of the IGBT, the slope refers to
Intercept means
Example five:
this embodiment is substantially the same as the previous embodiment, and is characterized in that:
in this embodiment, as shown in fig. 1, an IGBT junction temperature detection system based on turn-off delay time includes:
the IGBT module to be tested is used as a test object and provides a test port;
voltage VeEThe collecting unit 2 is used for collecting potential difference VeE between the auxiliary emitter E and the emitter E of the IGBT module 1 to be tested;
the collector current collecting unit 3 is used for collecting the collector current ic of the IGBT module 1 to be tested;
the collector-emitter voltage acquisition unit 4 is used for acquiring a potential difference VCE between a collector C and an emitter E of the IGBT module 1 to be tested;
the starting time-base comparator 5 and the end time-base comparator 6 respectively obtain starting pulse signals and ending pulse signals for acquiring the turn-off delay stage of the IGBT module 1 to be tested according to VeE.
The delay time measuring unit 7 is used for measuring the turn-off delay time of the IGBT module 1 to be tested according to the start and stop information of the turn-off delay stage;
the IGBT control unit 9 is used for controlling the on-off of the IGBT module 1 to be tested and controlling the work of the collector current acquisition unit 3, the collector and emitter voltage acquisition unit 4 and the delay time measurement unit 7;
the junction temperature calculation unit 8 is used for processing data and calculating the junction temperature of the IGBT module 1 to be tested;
the IGBT control unit 9 is connected with the IGBT module to be tested and is connected with the collector current acquisition unit 3, the collector-emitter voltage acquisition unit 4 and the delay time calculation unit 7. The collector current collecting unit 3 and the emitter voltage collecting unit 4 respectively collect the emitter current of the IGBT module to be tested and the collector emitter voltage of the IGBT module to be tested; the voltage VeE acquisition unit 2 acquires the voltages of the emitter and the auxiliary emitter of the IGBT module to be tested, and is connected with the starting point time base comparator 5 and the end point time base comparator 6; the delay time measuring unit 7 receives the outputs of the start time base comparator 5 and the end time base comparator 6; the junction temperature calculating unit 8 receives the signals of the collector current collecting unit 3 and the collector-emitter voltage collecting unit 4 and the output of the delay time measuring unit 7;
as shown in fig. 2, the voltage VeE is collected from the cell 2, and the voltage V iseEThe acquisition unit 2 comprises a voltage attenuation circuit 2-1, a voltage follower 2-2 and a signal offset circuit 2-3 which are connected in sequence; as shown in fig. 3, soThe collector current acquisition unit 3 comprises a current sensor 3-1, a shaping circuit 3-2 and a signal output 3-3 which are connected in sequence; as shown in fig. 4, the collector-emitter voltage collecting unit 4 includes a voltage sensor 4-1, a shaping circuit 4-2 and a signal output 4-3 connected in sequence; as shown in fig. 5, the starting point time base comparator unit 5 includes a voltage reference circuit 5-1 and a high speed comparator 5-2 connected in sequence; as shown in fig. 6, the end time base comparator unit 6 includes a voltage reference circuit 6-1 and a high speed comparator 6-2; as shown in fig. 7, the turn-off delay time calculation unit 7 may be implemented by a time-to-digital converter chip.
As shown in fig. 8, the control flow of the control unit includes the following steps:
establishing a data model: setting an operation condition under the condition that the maximum working voltage, the maximum working current and the maximum operation junction temperature of the IGBT module are not exceeded; for any operation condition, corresponding to a group of data about direct current bus voltage, IGBT module collector current and IGBT module operation junction temperature, acquiring voltage signals between two ends of an IGBT module power emitter and an auxiliary emitter under the operation condition, and extracting a time difference between two amplitude values of the voltage signals in a transient process of switching the IGBT module from a conduction state to a blocking state, namely turn-off delay time; fixing bus voltage and collector current, changing junction temperature of the IGBT module, collecting turn-off delay time of the IGBT, modeling the relation between the turn-off delay time and the junction temperature, and solving the change rate and intercept of the turn-off delay time relative to the operating junction temperature of the IGBT module under the conditions of specific bus voltage and specific collector current; under the condition of different collector currents, the steps are repeated, and then a correlation function model of the slope of the turn-off delay time relative to the operating junction temperature of the IGBT module and the collector current of the IGBT module under the specific bus voltage and a correlation function model of the turn-off delay time relative to the intercept of the operating junction temperature of the IGBT module and the collector current of the IGBT module are established.
Extracting junction temperature on line: collecting collector current of the IGBT module before the drive circuit controls the IGBT module to be switched from a conducting state to a blocking state; collecting a voltage signal between two ends of a power emitter and an auxiliary emitter of the IGBT module when the drive circuit controls the IGBT module to be switched from a conducting state to a blocking state, and extracting a time difference between two peak values of the voltage signal in a transient process that the IGBT module is switched from the conducting state to the blocking state; and then according to the collector current and turn-off delay time of the IGBT module collected in the transient process of switching the IGBT module from the conduction state to the blocking state, calculating or looking up a table to reversely deduce and obtain the running junction temperature of the IGBT module through a function model.
As shown in fig. 8, the mechanism of the voltage induced in the parasitic inductance of the emitter when the IGBT is turned off is that i changes abruptly at the start time of turn-offgAt LekThe upper induction results from a sudden change in collector current i at the moment the IGBT starts to turn off, i.e. at the end of the turn-off delaycAt LkEObtaining upper induction;
IGBT turn-off delay time t as shown in FIG. 9doffLinearly and positively correlated with junction temperature.
The slope and intercept at different collector currents are shown in FIGS. 8 and 9, respectively, and rational functions can be used
And
and (6) fitting.
The embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to the above embodiments, and various changes and modifications can be made according to the purpose of the invention, and any changes, modifications, substitutions, combinations or simplifications made according to the spirit and principle of the technical solution of the present invention shall be equivalent substitution ways, so long as the invention is in accordance with the purpose of the present invention, and the invention shall fall within the protection scope of the present invention as long as the invention does not depart from the technical principle and inventive concept of the turn-off delay time based IGBT junction temperature detection system and method of the present invention.
Claims (7)
1. An IGBT junction temperature detection system based on turn-off delay time comprises an IGBT module (1) to be detected and is characterized in that,the IGBT module (1) to be tested is respectively connected with an IGBT control unit (9) and a voltage VeEThe collector comprises a collecting unit (2), a collector current collecting unit (3) and a collector-emitter voltage collecting unit (4);
the IGBT module (1) to be tested is used as a test object and provides a test port;
the voltage VeEThe acquisition unit (2) is used for acquiring the potential difference V between the auxiliary emitter E and the power emitter E of the IGBT module (1) to be detectedeE；
The collector current acquisition unit (3) is used for acquiring collector current i of the IGBT module (1) to be testedc；
The collector-emitter voltage acquisition unit (4) is used for acquiring the potential difference V between the collector C and the power emitter E of the IGBT module (1) to be testedCE；
The voltage VeEThe acquisition unit (2) is connected with a delay time measuring unit (7) through a starting time base comparator (5) and an end time base comparator (6);
the starting time base comparator (5) and the ending time base comparator (6) are based on VeERespectively acquiring initial and ending pulse signals of a turn-off delay stage of the IGBT module (1) to be detected;
the delay time measuring unit (7) is used for measuring the turn-off delay time of the IGBT module (1) to be tested according to the start and stop information of the turn-off delay stage;
the IGBT control unit (9) is used for controlling the on-off of the IGBT module (1) to be tested and controlling the work of the collector current acquisition unit (3), the collector-emitter voltage acquisition unit (4) and the delay time measurement unit (7);
the collector-emitter voltage acquisition unit (4), the collector current acquisition unit (3) and the delay time measurement unit (7) are connected with a junction temperature calculation unit (8) and used for processing data and calculating the junction temperature of the IGBT module (1) to be measured.
2. The turn-off delay time-based IGBT junction temperature detection system according to claim 1, characterized in that: the voltage VeEThe acquisition unit (2) comprises a voltage attenuation circuit (2-1) and a voltage follower which are connected in sequenceA follower (2-2) and a signal offset circuit (2-3).
3. The turn-off delay time-based IGBT junction temperature detection system according to claim 1, characterized in that: the collector current acquisition unit (3) comprises a current sensor (3-1), a shaping circuit (3-2) and a signal output (3-3) which are connected in sequence.
4. The turn-off delay time-based IGBT junction temperature detection system according to claim 1, characterized in that: the collector-emitter voltage acquisition unit (4) comprises a voltage sensor (4-1), a shaping circuit (4-2) and a signal output (4-3) which are sequentially connected.
5. The turn-off delay time-based IGBT junction temperature detection system according to claim 1, characterized in that the turn-off delay time calculation unit (7) is realized by a time-to-digital converter chip.
6. An IGBT junction temperature detection method based on turn-off delay time is operated by the IGBT junction temperature detection system based on turn-off delay time as claimed in claim 1, and the control operation flow of the control unit comprises the following steps:
1) establishing a data model:
setting an operation condition under the condition that the maximum working voltage, the maximum working current and the maximum operation junction temperature of the IGBT module are not exceeded; for any operation condition, corresponding to a group of data about direct current bus voltage, IGBT module collector current and IGBT module operation junction temperature, acquiring voltage signals between two ends of an IGBT module power emitter and an auxiliary emitter under the operation condition, and extracting a time difference between two amplitude values of the voltage signals in a transient process of switching the IGBT module from a conduction state to a blocking state, namely turn-off delay time;
2) fixing bus voltage and collector current, changing junction temperature of the IGBT module, collecting turn-off delay time of the IGBT, modeling the relation between the turn-off delay time and the junction temperature, and solving the change rate and intercept of the turn-off delay time relative to the operating junction temperature of the IGBT module under the conditions of specific bus voltage and specific collector current; under the condition of different collector currents, repeating the steps, and further establishing a correlation function model of the slope of the turn-off delay time relative to the operating junction temperature of the IGBT module and the collector current of the IGBT module under the specific bus voltage, and a correlation function model of the turn-off delay time relative to the intercept of the operating junction temperature of the IGBT module and the collector current of the IGBT module;
3) collecting collector current of the IGBT module before the drive circuit controls the IGBT module to be switched from a conducting state to a blocking state; collecting a voltage signal between two ends of a power emitter and an auxiliary emitter of the IGBT module when the drive circuit controls the IGBT module to be switched from a conducting state to a blocking state, and extracting a time difference between two peak values of the voltage signal in a transient process that the IGBT module is switched from the conducting state to the blocking state; and then according to the collector current and turn-off delay time of the IGBT module collected in the transient process of switching the IGBT module from the conduction state to the blocking state, calculating or looking up a table to reversely deduce and obtain the running junction temperature of the IGBT module through a function model.
7. The IGBT junction temperature detection method based on turn-off delay time as claimed in claim 6, wherein: in the step 2), the correlation function model is composed of rational functions of turn-off delay time of each direct current bus voltage with respect to collector current of the IGBT module and operation junction temperature of the IGBT module; for any direct current bus voltage, rational functions of the direct current bus voltage with respect to turn-off delay time, collector current of the IGBT module, and operating junction temperature of the IGBT module are as follows:
wherein, a1、b1、c1、d1、a2、b2、c2、d2The constant value can be obtained by fitting data after off-line calibration. I iscFor collector current before turn-off of IGBT, TjIs the junction temperature, t, of the IGBTdoffFor the turn-off delay time of the IGBT, the slope refers to
Intercept means
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112858866A (en) * | 2021-01-20 | 2021-05-28 | 合肥工业大学 | IGBT junction temperature monitoring system and method based on Miller platform duration |
| CN117761497A (en) * | 2024-02-22 | 2024-03-26 | 湖南大学 | SiC MOSFET junction temperature measurement method and system based on fractional order modeling |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112858866A (en) * | 2021-01-20 | 2021-05-28 | 合肥工业大学 | IGBT junction temperature monitoring system and method based on Miller platform duration |
| CN117761497A (en) * | 2024-02-22 | 2024-03-26 | 湖南大学 | SiC MOSFET junction temperature measurement method and system based on fractional order modeling |
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