CN206362890U - Electronic power switch device junction temperature on-Line Monitor Device, detection circuit - Google Patents
Electronic power switch device junction temperature on-Line Monitor Device, detection circuit Download PDFInfo
- Publication number
- CN206362890U CN206362890U CN201621486186.7U CN201621486186U CN206362890U CN 206362890 U CN206362890 U CN 206362890U CN 201621486186 U CN201621486186 U CN 201621486186U CN 206362890 U CN206362890 U CN 206362890U
- Authority
- CN
- China
- Prior art keywords
- junction temperature
- power switch
- detection unit
- electronic power
- switch device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The utility model is related to a kind of junction temperature on-Line Monitor Device, and the on-Line Monitor Device includes main control unit, power electronic devices to be measured, current detecting unit, Vce(on)Detection unit and AD collecting units, wherein main control unit include device driving unit and junction temperature computing unit electronic power switch device, and current detecting unit is used under sampler conducting state the electric current I for flowing through devicec, Vce(on)The conduction voltage drop V for the section of a certain time rating that detection unit is used to gather under IGBT conducting statesce, pass through Vce(on)Analog circuit in detection unit draws equivalent conduction voltage drop signal Vce(on), AD collecting units complete analog current and voltage to the conversion of data signal, device driving unit, the drive signal V of the gate pole for providing device under testgAnd Vce(on)Detection unit switching signal VP (mos),IGBT driver elements use digital drive mode, and the switch controlling signal V of IGBT module gate pole is adjusted in IGBT driver elementsgWith Vce(on)Detection unit switching signal Vp(mos)Between level change sequential relationship.
Description
Technical field
The utility model is related to a kind of monitoring device, and in particular to a kind of electronic power switch device junction temperature on-line monitoring dress
Put, belong to electric and electronic technical field.
Background technology
With the development of Power Electronic Technique industry, power electronic devices as energy transformation and the core devices of transmission,
Its application is more and more extensive.When power converter system is run, because the switching loss and conduction loss of device can make it
The temperature rise of chip so that device inside material bears thermal stress, accelerates switching device degree of aging and crash rate, leads
Mutagens parallel operation breaks down.
The junction temperature estimation of switching device assesses significant to its reliability, health status and service life.Essence
The problem of true measurement device junction temperature is power electronics neck urgent need to resolve.But can be straight currently without a more reliable method
Connect measurement or estimation junction temperature.It is, by measurement device substrate or heatsink temperature, counter to push away device junction temperature mostly.In recent years, ground
Study carefully personnel and propose some according to the thermo-responsive electrical parameter of device (Thermo-Sensitive Electrical Parameter
TSEP) device junction temperature is estimated.I.e. when chip temperature changes with operating condition, the corresponding external electrical parameter of device under test
Also it can change therewith.Pass through the measurement to thermo-responsive electrical parameter, you can junction temperature of chip is inversely estimated.
At present, the conventional junction temperature method of estimation that carried out according to TSEP includes conducting voltage mensuration, threshold voltage method, short
Road current method, maximum voltage Variation Rate Method, maximum current slew rate method etc., these measuring conditions require high, and extract more
It is difficult.Wherein conduction voltage drop parameter is more sensitive to heat, but be due to device in normal work, turning-on voltage is relatively low, typically
Within several volts.The voltage born during shut-off is then even as high as kilovolt in several hectovolts.The voltage dynamic range change at device two ends
It is larger, it is difficult to accurately measure the other change of conduction voltage drop millivolt level caused by temperature change.Those skilled in the art
New scheme is had attempted to, but the problem never has and properly settled.
Utility model content
There is provided a kind of electronic power switch device junction exactly for technical problem present in prior art for the utility model
Warm on-Line Monitor Device, the technical scheme can be opened using dynamic instrumentation conduction voltage drop method when in break-over of device by controllable
Close, go the conduction voltage drop for detecting electronic power switch device, after device is turned off, no longer go detection, can so reduce conducting
The dynamic range of pressure drop detection circuit, greatly improves measurement accuracy.
To achieve these goals, the technical solution of the utility model is as follows, and a kind of electronic power switch device junction temperature exists
Line monitoring device, it is characterised in that the on-Line Monitor Device includes main control unit, electronic power switch device to be measured, electricity
Flow detection unit, Vce(on)Detection unit and AD collecting units, wherein main control unit include device driving unit and junction temperature meter
Unit is calculated, current detecting unit is used under sampler conducting state the electric current I for flowing through devicec, Vce(on)Detection unit is used to adopt
Collect the conduction voltage drop V of the section of a certain time rating under electric power electronic switching device conducting statece, pass through Vce(on)In detection unit
Analog circuit draws equivalent conduction voltage drop signal Vce(on), AD collecting units completion analog current and voltage turning to data signal
Change, device driving unit, the drive signal V of the gate pole for providing device under testgAnd Vce(on)Detection unit switching signal
VP (mos),Junction temperature computing unit, for the electric current I by sampler conducting statecWith conduction voltage drop Vce(on), computation of table lookup obtains
To the working junction temperature T of devicej。
As it is of the present utility model it is a kind of improve, the current detecting unit using current transformer or Rogowski coil or
One kind in person's resistance method of temperature measurement is detected.
It is used as a kind of improvement of the present utility model, the Vce(on)Detection unit, includes electronic switch a Q1, Yi Ji electricity
Sample circuit is pressed, the electronic switch Q1 is connected on the input of voltage sampling circuit.
It is used as a kind of improvement of the present utility model, the Vce(on)Detection unit makes electronic power switch device in electronic cutting
Access testing system in the certain time period under Q1 opening states is closed, with electric power electricity under electronic power switch device other states
Sub switch device junction temperature on-line detecting system disconnects, so as to protect Vce(on)Detection unit simultaneously can accurately measure electronic power switch
Conduction voltage drop under device opening state.
It is used as a kind of improvement of the present utility model, voltage sampling circuit including the resistance R7, R8, R9, R10, electric capacity
C4, C5, C6 and operational amplifier U3, wherein resistance R7, R8, R9, R10, electric capacity C4, C5, C6 and operational amplifier U3, institute
The other end for stating R7 connects C4 one end, while R9 is connected, C5 one end and U3 positive polarity input；The other end of the C4 connects
U3 negative polarity input and R8 one end is connect, while connecting R10, C6 one end；The other end ground connection of the R8；The R10
The other end connect C6 the other end, while being connected to U3 output end Vce.
As it is of the present utility model it is a kind of improve, the Rogowski coil sample circuit include resistance R1, R2, R3, R4, R5,
R6, electric capacity C1, C2, C3 and operational amplifier U1, U2, the terminations of R2 mono- Rogowski coil, another termination C1 one end and U1
Positive polarity input, the other end ground connection of the C1, one end ground connection of the R1, another termination U1 negative polarity inputs, together
When connect R3 and C2 one end；Another termination C2 of the R3 other end, while connecting U1 output；The output of the U1 connects
Connect C3 one end；The other end of the C3 connects R4 one end, while connecting U2 positive polarity input；Another termination of the R4
Ground；One end ground connection of the R5, other end connection U2 negative polarity input and one end with R6；The other end connection U2 of the R6
Output, U2 is output as Ic_ad.
It is provided with the detection circuit of electronic power switch device junction temperature on-Line Monitor Device, it is characterised in that the detection
It is online that circuit includes bus direct voltage source Vdc, bus capacitor C, load inductance L, power diode D and IGBT module junction temperature
Detecting system；Wherein, bus direct voltage source Vdc positive pole and bus capacitor C one end, load inductance L one end and the pole of power two
Pipe D negative electrodes be connected, the load inductance other end with it is to be measured in power diode D anodes and IGBT module junction temperature on-line detecting system
IGBT module colelctor electrode IGBT_C is connected, the IGBT module emitter stage IGBT_E to be measured in IGBT module junction temperature on-line detecting system
It is connected with the negative pole of the bus capacitor other end and bus direct voltage source Vdc.
The electronic power switch device junction temperature for monitoring detection circuit on-line using the electronic power switch device junction temperature exists
The testing procedure of line monitoring junction temperature detection device is as follows：
The switch controlling signal V of the electronic power switch device provided by driver elementgWith VceDetection unit switching signal
Vp(mos)Between level change sequential；In t0-t3In period, the switch controlling signal V of electronic power switch devicegFor high electricity
Flat, electronic power switch device to be measured is conducting state, the switch controlling signal of remaining time electronic power switch device gate pole
VgFor low level, electronic power switch device to be measured is off state；
In t1-t2In period, Vce(on)Q1 conductings in detection unit so that Vce(on)Detection unit accesses IGBT module
Junction temperature on-line detecting system, remaining time Vce(on)Q1 shut-offs in detection unit so that Vce(on)Detection unit and IGBT module
Junction temperature on-line detecting system disconnects；Because IGBT module is constantly opened and turned off in practical work process, to ensure IGBT
The high accuracy of module junction temperature on-line checking, it is necessary to assure t1 the and t2 moment falls in the range of t0 and t3；
When the switch controlling signal VIGBT for the IGBT module gate pole that driver element is provided service time ton is t0 and t3
Carve and determined by outside control unit, it is irrelevant with junction temperature detection device.IGBT prolongs after receiving and opening signal by opening
Slow time tdon, after could be normal open-minded.tdonTime is determined by specific measured device, therefore the measurement moment must be in tdonWith
Afterwards.For junction temperature measurement device, in this case it is not apparent that when the t3 moment arrives, it is therefore desirable to surveyed as early as possible in IGBT opening processes
Measure Vce(on).IGBT time of measuring is in 1us, and the 1us times depend on the speed of Acquisition Circuit, for the high speed amplifier time
Can be with shorter.Q1 is turned off after being measured.Specific timing diagram is as shown in Figure 3.
Relative to prior art, the utility model has the following advantages that, 1) the technical scheme global design is ingenious, structure is tight
Gather；2) technical scheme is applicable IGBT module junction temperature on-line checking, due to IGBT module conduction voltage drop and IGBT module shut-off
The busbar voltage difference born is larger, and the error of common IGBT module conduction voltage drop detection circuit is larger；It is new by this practicality
The V of typece(on)The circuit of detection unit carries out conduction voltage drop sampling, can accurately extract leading under IGBT module conducting state
Logical pressure drop Vce；By the Rogowski coil current sampling circuit in current detecting unit of the present utility model, can accurately it extract
The conducting electric current I of IGBT module in the on statec；Pass through conduction voltage drop Vce(on)With electric conduction IcAccurate measurement, Jin Erjing
Really calculate the junction temperature T of IGBT modulej；3) the technical scheme cost is relatively low, is easy to large-scale popularization and application.
Brief description of the drawings
Fig. 1 is utility model overall structure diagram；
Fig. 2 is that IGBT module detects electrical block diagram；
Fig. 3 is test signal timing diagram, wherein, VgFor the switch controlling signal of IGBT module gate pole, Vp(mos)For VCEDetection
Unit switch signal, IcFor IGBT module conducting electric current, VceFor IGBT module voltage, Vce(on)For VceDetection unit output signal.
Fig. 4 is based on Rogowski coil electric current IcSample circuit schematic diagram；
Fig. 5 is conduction voltage drop Vce(on)Detection cell circuit schematic diagram；
Fig. 6 is junction temperature and the relation of collector current and on-state voltage drop.
Embodiment：
In order to deepen to understand of the present utility model, the present embodiment is described in detail below in conjunction with the accompanying drawings.
Embodiment 1：Referring to Fig. 1, a kind of electronic power switch device junction temperature on-Line Monitor Device, the on-Line Monitor Device
Including main control unit, power electronic devices to be measured, current detecting unit, Vce(on)Detection unit and AD collecting units, wherein
Main control unit is included in device driving unit and junction temperature computing unit, the technical scheme, electronic power switch device bag to be measured
Containing conventional electronic power switch device, including MOSFET, IGBT etc.；Current detecting unit flows down for sampler conducting state
Cross the electric current I of devicec, Vce(on)The conduction voltage drop for the section of a certain time rating that detection unit is used to gather under IGBT conducting states
Vce, pass through Vce(on)Analog circuit in detection unit draws equivalent conduction voltage drop signal Vce(on), the completion simulation of AD collecting units
Electric current and voltage are to the conversion of data signal, device driving unit, the drive signal V of the gate pole for providing device under testgWith
Vce(on)Detection unit switching signal VP (mos),IGBT driver elements use digital drive mode, are adjusted in IGBT driver elements
The switch controlling signal V of IGBT module gate polegWith Vce(on)Detection unit switching signal Vp(mos)Between level change sequential close
System；Gate electrode drive signals VgFor the switching signal of device under test, vulnerabilities scan signal mainly is amplified to drive and treated by the unit
Survey the signal of device.Vp(mos)For conduction voltage drop Vce(on)Detection unit provides switching signal, and letter is opened when device under test is received
Number VgAfterwards, device is in the conduction state, is now adapted to Vce(on)Detection unit goes to detect conduction voltage drop.Can be by Vce(on)Detection is single
Switch connection inside member, it is necessary to which internal switch is disconnected after detection is finished.Junction temperature computing unit, junction temperature and the electricity of device
Flow IcWith the V of conduction voltage dropce(on)Relation can use Tj=f (Vce(on),Ic) represent.The equation to be heterogeneous linear, can by from
Junction temperature and I are set up in line measurementc、Vce(on)Form.Junction temperature computing unit mainly passes through the electric current I of sampler conducting statecWith
Conduction voltage drop Vce(on), the working junction temperature T of device is obtained by computation of table lookupj；The current detecting unit uses current transformer
Or one kind in Rogowski coil or resistance method of temperature measurement is detected.
The Vce(on)Detection unit, the conduction voltage drop V for gathering the section of a certain time rating under IGBT conducting statesce,
Vce(on)Detection unit, as the method for switch, makes V using concatenation MOSFETce(on)Detection unit is under IGBT module opening state
Certain time period in access testing system, it is disconnected with IGBT module junction temperature on-line detecting system under IGBT module other states
Open, so as to protect Vce(on)Detection unit simultaneously can accurately measure the conduction voltage drop under IGBT module opening state.Due to IGBT module
The conduction voltage drop opened is much smaller than shut-off voltage, and tradition is extracted the method for IGBT module conduction voltage drop not by conduction voltage drop and closed
Power-off pressure is separated, and causes measurement dynamic range excessive, so as to cause conduction voltage drop to extract error greatly, by of the present utility model
VCE(on)Detection unit can ensure the pinpoint accuracy of conduction voltage drop.The Vce(on)Detection unit, comprising an electronic switch Q1,
And voltage sampling circuit, the electronic switch Q1 is connected on the input of voltage sampling circuit.The Vce(on)Detection unit makes
Electronic power switch device access testing system in the certain time period under electronic switch Q1 opening states, is opened in power electronics
Disconnected under other states of pass device with electronic power switch device junction temperature on-line detecting system, so as to protect Vce(on)Detection unit
And can accurately measure the conduction voltage drop under electronic power switch device opening state.Referring to Fig. 5, the voltage sampling circuit, bag
Include resistance R7, R8, R9, R10, electric capacity C4, C5, C6 and operational amplifier U3, wherein resistance R7, R8, R9, R10, electric capacity C4,
C5, C6 and operational amplifier U3, the R7 other end connect C4 one end, while connecting R9, C5 one end and U3 are just
Polarity is inputted；The other end connection U3 of C4 negative polarity input and R8 one end, while connecting R10, C6 one end；Institute
State R8 other end ground connection；The other end of the R10 connects the C6 other end, while being connected to U3 output end Vce.
Referring to Fig. 4, the Rogowski coil sample circuit include resistance R1, R2, R3, R4, R5, R6, electric capacity C1, C2, C3 with
And operational amplifier U1, U2, the R2 mono- terminate Rogowski coil, another termination C1 one end and U1 positive polarity input, institute
State C1 other end ground connection, one end ground connection of the R1, another termination U1 negative polarity input, while connecting the one of R3 and C2
End；Another termination C2 of the R3 other end, while connecting U1 output；Output connection C3 one end of the U1；The C3
The other end connect R4 one end, while connect U2 positive polarity input；The other end ground connection of the R4；A termination of the R5
Ground, other end connection U2 negative polarity input and one end with R6；The other end of the R6 connects U2 output, and U2 is output as
Ic_ad。
Embodiment 2：Referring to Fig. 2, the IGBT detection electricity of electronic power switch device junction temperature on-Line Monitor Device is provided with
Road, the detection circuit includes bus direct voltage source Vdc, bus capacitor C, load inductance L, power diode D and IGBT
Module junction temperature on-line detecting system；Wherein, bus direct voltage source Vdc positive pole and bus capacitor C one end, load inductance L mono-
End is connected with power diode D negative electrodes, the load inductance other end and power diode D anodes and IGBT module junction temperature on-line checking
IGBT module colelctor electrode IGBT_C to be measured in system is connected, the IGBT module to be measured in IGBT module junction temperature on-line detecting system
Emitter stage IGBT_E is connected with the negative pole of the bus capacitor other end and bus direct voltage source Vdc.
Embodiment 3：Referring to Fig. 3, the test of the IGBT module junction temperature detection device of circuit is detected using the IGBT module
Step is as follows：Coordinate according to the IGBT drivings shown in Fig. 3 and mos driver' s timings figure, complete the measurement of high-precision conduction voltage drop,
t0-t3In period, the switch controlling signal V of IGBT module gate polegFor high level, IGBT module to be measured is conducting state, remaining
The switch controlling signal V of time IGBT module gate polegFor low level, IGBT module to be measured is off state；In t1-t2Period
It is interior, Vce(on)Q1 conductings in detection unit so that Vce(on)Detection unit accesses IGBT module junction temperature on-line detecting system, remaining
Time Vce(on)Q1 shut-offs in detection unit so that Vce(on)Detection unit disconnects with IGBT module junction temperature on-line detecting system.
Because IGBT module is constantly opened and turned off in practical work process, to ensure the high-precision of IGBT module junction temperature on-line checking
Degree, it is necessary to assure t1 the and t2 moment falls in the range of t0 and t3.The switch control for the IGBT module gate pole that driver element is provided
Signal VIGBT service time ton is to be determined by outside control unit at t0 the and t3 moment, irrelevant with junction temperature detection device.
IGBT is after receiving and opening signal, by open time delay tdon, after could be normal open-minded.tdonTime is by being specifically tested
Device is determined, therefore the measurement moment must be in tdonAfter.For junction temperature measurement device, in this case it is not apparent that when the t3 moment arrives
Come, it is therefore desirable to measure V in IGBT opening processes as early as possiblece(on).IGBT time of measuring is depended in 1us, 1us times
The speed of Acquisition Circuit, for high speed amplifier, the time can be with shorter.Q1 is turned off after being measured.Specific timing diagram
As shown in Figure 3.
Operation principle：
Off-line test sets up measured device junction temperature and electric current I firstcWith the V of conduction voltage dropce(on)Related table, by public affairs
Formula Tj=f (Vce(on),Ic) represent.Fig. 6 is device junction temperature and electric current IcWith the V of conduction voltage dropce(on)Relation curve.In reality
In IGBT switching processes, I is recorded in real time according to Fig. 3cAnd Vce(on), according to the form set up in advance, device is obtained by look-up table
Working junction temperature.By taking certain semiconductor manufacturer IGBT working conditions as an example, the electric current I of side in IGBT switching processescFor 150A,
Vce(on)For 3.1V, junction temperature can be obtained by tabling look-up for 60 DEG C.
Junction temperature computing unit, junction temperature and the electric current I of devicecWith the V of conduction voltage dropce(on)Relation can use Tj=f (Vce(on),
Ic) represent.The equation is non-linear, can set up junction temperature and I by off-line measurementc、Vce(on)Form, as shown in Figure 6.Knot
Warm computing unit mainly passes through the electric current I of sampler conducting statecWith conduction voltage drop Vce(on), device is obtained by computation of table lookup
The working junction temperature T of partj；
It should be noted that above-described embodiment, not for limiting protection domain of the present utility model, in above-mentioned technical side
Made equivalents or replacement each fall within the utility model scope of the claimed protection on the basis of case.
Claims (7)
1. a kind of electronic power switch device junction temperature on-Line Monitor Device, it is characterised in that the on-Line Monitor Device includes master
Control unit, electronic power switch device to be measured, current detecting unit, Vce(on)Detection unit and AD collecting units, wherein main
Control unit includes device driving unit and junction temperature computing unit, and current detecting unit is used to flow through under sampler conducting state
The electric current I of devicec, Vce(on)The section of a certain time rating that detection unit is used to gather under electronic power switch device conducting state
Conduction voltage drop Vce, pass through Vce(on)Analog circuit in detection unit draws equivalent conduction voltage drop signal Vce(on), AD collecting units
Analog current and voltage are completed to the conversion of data signal, device driving unit, the driving of the gate pole for providing device under test
Signal VgAnd Vce(on)Detection unit switching signal VP (mos),Junction temperature computing unit, for the electric current by sampler conducting state
IcWith conduction voltage drop Vce(on), computation of table lookup obtains the working junction temperature T of devicej。
2. electronic power switch device junction temperature on-Line Monitor Device according to claim 1, it is characterised in that the electric current
Detection unit is detected using one kind in current transformer or Rogowski coil or resistance method of temperature measurement.
3. electronic power switch device junction temperature on-Line Monitor Device according to claim 1 or 2, it is characterised in that described
Vce(on)Detection unit, comprising an electronic switch Q1, and voltage sampling circuit, the electronic switch Q1 is connected on voltage and adopted
The input of sample circuit.
4. electronic power switch device junction temperature on-Line Monitor Device according to claim 3, it is characterised in that described
Vce(on)Detection unit makes electronic power switch device access detection system in the certain time period under electronic switch Q1 opening states
System, disconnects under electronic power switch device other states with electronic power switch device junction temperature on-line detecting system, so as to protect
Protect Vce(on)Detection unit simultaneously can accurately measure the conduction voltage drop under electronic power switch device opening state.
5. electronic power switch device junction temperature on-Line Monitor Device according to claim 3, it is characterised in that the voltage
Sample circuit including resistance R7, R8, R9, R10, electric capacity C4, C5, C6 and operational amplifier U3, wherein resistance R7, R8, R9,
R10, electric capacity C4, C5, C6 and operational amplifier U3, the R7 other end connect C4 one end, while connecting R9, the one of C5
End and U3 positive polarity are inputted；The other end connection U3 of C4 negative polarity input and R8 one end, while R10 is connected,
C6 one end；The other end ground connection of the R8；The other end of the R10 connects the C6 other end, while being connected to U3 output
Hold Vce.
6. electronic power switch device junction temperature on-Line Monitor Device according to claim 2, it is characterised in that the Roche
Coil sample circuit includes resistance R1, R2, R3, R4, R5, R6, electric capacity C1, C2, C3 and operational amplifier U1, U2, the R2
One termination Rogowski coil, another termination C1 one end and U1 positive polarity input, the other end ground connection of the C1, the R1's
One end is grounded, another termination U1 negative polarity input, while connecting R3 and C2 one end；Another termination C2's of the R3 is another
End, while connecting U1 output；Output connection C3 one end of the U1；The other end of the C3 connects R4 one end, connects simultaneously
Connect U2 positive polarity input；The other end ground connection of the R4；One end ground connection of the R5, other end connection U2 negative polarity input
With one end with R6；The other end of the R6 connects U2 output, and U2 is output as Ic_ad.
7. it is provided with the detection circuit of electronic power switch device junction temperature on-Line Monitor Device, it is characterised in that the detection electricity
Examined online including bus direct voltage source Vdc, bus capacitor C, load inductance L, power diode D and IGBT module junction temperature on road
Examining system；Wherein, bus direct voltage source Vdc positive pole and bus capacitor C one end, load inductance L one end and power diode D
Negative electrode be connected, the load inductance other end with it is to be measured in power diode D anodes and IGBT module junction temperature on-line detecting system
IGBT module colelctor electrode IGBT_C is connected, the IGBT module emitter stage IGBT_E to be measured in IGBT module junction temperature on-line detecting system
It is connected with the negative pole of the bus capacitor other end and bus direct voltage source Vdc.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621486186.7U CN206362890U (en) | 2016-12-31 | 2016-12-31 | Electronic power switch device junction temperature on-Line Monitor Device, detection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621486186.7U CN206362890U (en) | 2016-12-31 | 2016-12-31 | Electronic power switch device junction temperature on-Line Monitor Device, detection circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206362890U true CN206362890U (en) | 2017-07-28 |
Family
ID=59378431
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621486186.7U Active CN206362890U (en) | 2016-12-31 | 2016-12-31 | Electronic power switch device junction temperature on-Line Monitor Device, detection circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206362890U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106771951A (en) * | 2016-12-31 | 2017-05-31 | 徐州中矿大传动与自动化有限公司 | Electronic power switch device junction temperature on-Line Monitor Device, detection circuit and method of testing |
| CN107807319A (en) * | 2017-09-22 | 2018-03-16 | 全球能源互联网研究院有限公司 | A kind of insulated gate bipolar transistor IGBT test circuit and method |
| CN109270381A (en) * | 2018-10-30 | 2019-01-25 | 杭州高坤电子科技有限公司 | The load of four tunnel independent electronics controls and measures junction temperature system and its junction temperature measurement method |
| CN111830389A (en) * | 2020-07-31 | 2020-10-27 | 徐州中矿大传动与自动化有限公司 | IGBT junction temperature estimation system and method based on emitter power terminal temperature |
| CN112229530A (en) * | 2020-09-30 | 2021-01-15 | 中国科学院电工研究所 | SiC-based MOSFET junction temperature online monitoring system and online monitoring method |
-
2016
- 2016-12-31 CN CN201621486186.7U patent/CN206362890U/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106771951A (en) * | 2016-12-31 | 2017-05-31 | 徐州中矿大传动与自动化有限公司 | Electronic power switch device junction temperature on-Line Monitor Device, detection circuit and method of testing |
| CN107807319A (en) * | 2017-09-22 | 2018-03-16 | 全球能源互联网研究院有限公司 | A kind of insulated gate bipolar transistor IGBT test circuit and method |
| CN107807319B (en) * | 2017-09-22 | 2020-03-10 | 全球能源互联网研究院有限公司 | Insulated gate bipolar transistor IGBT test circuit and method |
| CN109270381A (en) * | 2018-10-30 | 2019-01-25 | 杭州高坤电子科技有限公司 | The load of four tunnel independent electronics controls and measures junction temperature system and its junction temperature measurement method |
| CN111830389A (en) * | 2020-07-31 | 2020-10-27 | 徐州中矿大传动与自动化有限公司 | IGBT junction temperature estimation system and method based on emitter power terminal temperature |
| CN111830389B (en) * | 2020-07-31 | 2023-10-20 | 江苏国传电气有限公司 | IGBT junction temperature estimation system and method based on emitter power terminal temperature |
| CN112229530A (en) * | 2020-09-30 | 2021-01-15 | 中国科学院电工研究所 | SiC-based MOSFET junction temperature online monitoring system and online monitoring method |
| CN112229530B (en) * | 2020-09-30 | 2023-10-03 | 中国科学院电工研究所 | SiC-based MOSFET junction temperature online monitoring system and online monitoring method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106771951A (en) | Electronic power switch device junction temperature on-Line Monitor Device, detection circuit and method of testing | |
| CN206362890U (en) | Electronic power switch device junction temperature on-Line Monitor Device, detection circuit | |
| CN104090224B (en) | The on-line detecting system of a kind of power diode module working junction temperature and detection method | |
| CN104155587B (en) | System and method for on-line detection of operating junction temperature of IGBT module | |
| CN104181462B (en) | Measuring circuit for breakover voltage drop of semiconductor switch device | |
| CN108982998B (en) | A kind of detection circuit and detection method of on-line checking binding line ageing process | |
| CN106969851A (en) | The on-line measuring device of IGBT power model junction temperatures is measured based on saturation voltage drop | |
| CN108627753A (en) | A kind of IGBT on-line condition monitorings method and measuring system based on Miller platform time delay | |
| CN105572558A (en) | Power diode module working junction temperature on-line detection system and detection method | |
| CN110658435B (en) | IGBT junction temperature monitoring device and method | |
| CN105811944B (en) | Driving device and method for the estimation of IGBT junction temperature | |
| CN105911446A (en) | IGBT aging state monitoring method and IGBT aging state monitoring device | |
| CN106168647A (en) | IGBT ageing state detecting system | |
| CN110376500A (en) | Transient temperature rise On-line Measuring Method in a kind of power MOS (Metal Oxide Semiconductor) device opening process | |
| CN105158667B (en) | A kind of current transformer power diode junction temperature measurement System and method for | |
| CN113466647B (en) | Conduction voltage drop on-line monitoring circuit for junction temperature monitoring | |
| CN111880069A (en) | Semiconductor device junction temperature on-line detection system based on turn-on current slope | |
| CN113064042B (en) | Junction temperature extraction method of power semiconductor device | |
| CN113219315B (en) | Inverter IGBT aging on-line monitoring method and system based on junction temperature normalization | |
| Zhou et al. | Monitoring chip fatigue in an IGBT module based on grey relational analysis | |
| CN102539952A (en) | Test device for dynamic characteristics of power main circuit and driving circuit thereof and method | |
| CN114839499A (en) | Power device junction temperature on-line monitoring system based on dynamic threshold voltage | |
| CN204101671U (en) | A kind of Novel multi-core cable tester | |
| CN107894558A (en) | A kind of HVDC branch insulation detects circuit | |
| CN114740297A (en) | Power device testing method and system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 221116 No. second Zhujianglu Road Industrial Park, Xuzhou high tech Zone, Jiangsu 7 Patentee after: Jiangsu Guochuan Electric Co.,Ltd. Address before: 221116 No. second Zhujianglu Road Industrial Park, Xuzhou high tech Zone, Jiangsu 7 Patentee before: CHINA MINING DRIVES & AUTOMATION Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder |