CN114740297A - Power device testing method and system - Google Patents
Power device testing method and system Download PDFInfo
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- CN114740297A CN114740297A CN202210383083.1A CN202210383083A CN114740297A CN 114740297 A CN114740297 A CN 114740297A CN 202210383083 A CN202210383083 A CN 202210383083A CN 114740297 A CN114740297 A CN 114740297A
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- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
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Abstract
The invention provides a method and a system for testing a power device, wherein the method for testing the power device comprises the following steps: putting a power device to be tested into a module to be tested, and taking the power device as the device to be tested to be connected into a test circuit; inputting different voltage conditions; inputting a double-pulse signal through a grid driving signal; in the conducting process of a device to be tested, the inductance through which the current passes is obtained through the inductance module, and the magnitude of the current is adjusted according to the magnitude of the inductance; measuring voltage measurement data of the device to be measured according to the double-pulse signal through a clamping circuit; and detecting the current flowing through the measured value of the detection resistor, and combining the voltage measurement data to obtain the test result of the device to be tested. The power device testing method and the power device testing system can test the change condition of the dynamic on-resistance value of the power device during working, and the resistance value obtained through testing is high in precision and good in anti-interference performance.
Description
Technical Field
The invention relates to the technical field of electronic circuits, in particular to a power device testing method and system.
Background
The power device is an electronic component with larger output power, and currently, in the prior art, the on-resistance value of the power device can only be measured statically, and the measured result is not only lower in accuracy, but also cannot feed back the change condition of the on-resistance in the switching process of the power device in real time.
Disclosure of Invention
The present invention is directed to a method and a system for testing a power device, so as to solve the problems in the background art.
In order to achieve the above object, the present invention provides the following technical solution, a method for testing a power device, including:
putting a power device to be tested into a module to be tested, and taking the power device as the device to be tested to be connected into a test circuit;
inputting different voltage conditions;
inputting a double-pulse signal through a grid driving signal;
in the conducting process of the device to be tested, the inductance through which the current passes is obtained through the inductance module, and the magnitude of the current is adjusted according to the magnitude of the inductance; performing signal driving on the device to be tested according to the double-pulse signal, and measuring voltage measurement data of the device to be tested through a clamping circuit; detecting a current flowing through the measurement value of the detection resistor;
and obtaining a test result of the device to be tested according to the voltage measurement data and the current flowing measurement value.
Further, when different voltage conditions are input, high-voltage direct current is input according to the device to be tested, filtering processing is carried out on the input high-voltage direct current through a fuse and a capacitor, and during the filtering processing, the size of filtering is determined according to the device to be tested.
Further, the double-pulse signal is a PWM control signal, and when performing signal driving on the device under test according to the double-pulse signal, the method includes: receiving an input PWM control signal through the transfer interface PWM _ IN 1; filtering the PWM control signal to obtain a first processing control signal; driving the device to be tested according to the first processing control signal by adopting an isolation driver; the isolation driver supplies power through an IC power supply circuit, and an isolation power supply is adopted to output low-voltage direct-current voltage to supply power for the isolation driver in the IC power supply circuit.
Further, the measuring voltage measurement data of the device under test by the clamping circuit includes: inputting a low-voltage direct-current voltage into the clamping circuit; when the device to be tested is turned off, analyzing the data information of the turn-off state, wherein in the data information of the turn-off state, the position of the VDS is high voltage, the diode D1 is cut off in the reverse direction, and the voltage of the position VM is equal to the voltage of the diode D1; when the device to be tested is conducted, analyzing conducting state data information, wherein in the conducting state data information, the VDS position is low voltage, the diode D1 is conducted, and the voltage of the VM position is obtained by measuring the voltage of the VM position; and obtaining voltage measurement data of the device to be measured according to the off-state data information and the on-state data information.
Furthermore, a detection port is arranged on a connecting line at two ends of the detection resistor, and when the detection resistor is detected, an oscilloscope current probe is adopted to connect a probe of the oscilloscope current probe to the detection port, so that a current flowing measurement value of the detection resistor is obtained.
A power device testing system, the power device testing method comprising: the device comprises a module to be tested, a high-voltage input module, an inductance module, a clamping circuit module, a signal driving module and a test analysis module;
the module to be tested is used for placing a power device to be tested and taking the power device as the device to be tested to be connected into the test circuit;
the high-voltage input module is used for inputting different voltage conditions;
the signal driving module is used for inputting a double-pulse signal through a grid driving signal and carrying out signal driving on the device to be tested according to the double-pulse signal;
the inductance module is used for acquiring inductance through which current passes through by the inductance module in the conduction process of the device to be tested and adjusting the magnitude of the current according to the magnitude of the inductance;
the clamping circuit module is used for testing the device to be tested to obtain voltage measurement data of the device to be tested;
and the test analysis module is used for detecting the current flowing measured value of the detection resistor and obtaining the test result of the device to be tested by combining the voltage measurement data.
Further, when different voltage conditions are input, the high voltage input module inputs high voltage direct current according to the device to be tested, and the high voltage input module comprises: a VDD _1 terminal, a fuse F1, an alternating current polar capacitor EC1, a GND1 terminal, a GND terminal, a first capacitor C1, a second capacitor C2, a third capacitor C3, a fourth capacitor C4 and a fifth capacitor C5; after the high-voltage direct current at the VDD _1 end is input, filtering processing is carried out on the input high-voltage direct current through the fuse F1, the alternating-current polar capacitor EC1, the GND1 end, the GND end, the first capacitor C1, the second capacitor C2, the third capacitor C3, the fourth capacitor C4 and the fifth capacitor C5, and during the filtering processing, the size of filtering is determined according to the device to be tested.
Further, the signal driving module includes: a signal unit and a driving unit; the double-pulse signal input by the signal unit through the grid driving signal is a PWM control signal; the driving unit receives the PWM control signal input by the signal unit through a switching port PWM _ IN1, carries out filtering processing on the PWM control signal to obtain a first processing control signal, and then drives the device to be tested according to the first processing control signal by adopting an isolation driver; the isolation driver supplies power through an IC power supply circuit, and an isolation power supply is adopted to output low-voltage direct-current voltage to supply power for the isolation driver in the IC power supply circuit.
Further, a low-voltage direct-current voltage is input into a clamping circuit in the clamping circuit module; in the clamping circuit, when the device to be tested is turned off, the data information of the turn-off state is analyzed, in the data information of the turn-off state, the position of a VDS is high voltage, a diode D1 is turned off in the reverse direction, and the voltage of the position of a VM is equal to the voltage of a diode D1; when the device to be tested is conducted, analyzing conducting state data information, wherein in the conducting state data information, the VDS position is low voltage, the diode D1 is conducted, and the voltage of the VM position is obtained by measuring the voltage of the VM position; and obtaining voltage measurement data of the device to be measured according to the off-state data information and the on-state data information.
Further, the test analysis module includes: a test unit and an analysis unit; the testing unit adopts an oscilloscope current probe to detect the detection resistor, and during detection, a detection port is arranged on a connecting line at two ends of the detection resistor, a probe of the oscilloscope current probe is connected to the detection port, and a current flowing measured value of the detection resistor is obtained.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
The technical solution of the present invention is further described in detail by the accompanying drawings and embodiments.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic diagram illustrating steps of a power device testing method according to the present invention;
FIG. 2 is a schematic diagram of a power device testing system according to the present invention;
FIG. 3 is a schematic diagram of an inductor module in a power device testing system according to the present invention;
FIG. 4 is a schematic diagram of a high voltage input module in a power device testing system according to the present invention;
FIG. 5 is a schematic diagram of a signal driving module in a power device testing system according to the present invention;
FIG. 6 is a schematic diagram of an IC power supply circuit in a power device testing system according to the present invention;
fig. 7 is a schematic diagram of a clamp circuit module in a power device testing system according to the present invention.
Detailed Description
The preferred embodiments of the present invention will be described in conjunction with the accompanying drawings, and it will be understood that they are described herein for the purpose of illustration and explanation and not limitation.
As shown in fig. 1, an embodiment of the present invention provides a power device testing method, where the power device testing method includes:
putting a power device to be tested into a module to be tested, and taking the power device as the device to be tested to be connected into a test circuit;
inputting different voltage conditions;
inputting a double-pulse signal through a grid driving signal;
acquiring the inductance through which the current passes through by an inductance module in the conducting process of the device to be tested, and adjusting the magnitude of the current according to the magnitude of the inductance; performing signal driving on the device to be tested according to the double-pulse signal, and measuring voltage measurement data of the device to be tested through a clamping circuit; detecting a current flowing through the measurement value of the detection resistor;
and fifthly, obtaining a test result of the device to be tested according to the voltage measurement data and the current flow measurement value.
When the power device is tested, the power device to be tested is firstly put into a module to be tested, the power device is taken as the device to be tested in the module to be tested and is connected into a test circuit, then different voltage conditions are input into the test circuit, and a double-pulse signal is input through a grid drive signal; then, in the conducting process of the device to be tested, the induction module is used for obtaining the induction quantity of the passing current, the current is adjusted according to the induction quantity, meanwhile, the clamping circuit is used for carrying out signal transmission according to the double-pulse signal, voltage measurement data of the device to be tested are obtained through measurement, then the current passing through the detection resistor connected with the device to be tested is detected, and calculation is carried out according to the voltage measurement value and the current passing measurement value, so that the test result of the device to be tested is obtained, namely the dynamic conducting resistance value of the power device during working.
According to the technical scheme, the test data can be dynamically obtained and analyzed to obtain the test result when the device to be tested is conducted through the power device test method, dynamic test of the dynamic conduction resistance value of the power device during working is achieved, the test result of the power device is obtained according to the dynamic test data, the input voltage condition and the input double-pulse signal are processed aiming at the input signal in the test process, interference of irrelevant factors is reduced, and the precision of the test result is improved.
In one embodiment of the invention, when different voltage conditions are input, high-voltage direct current is input according to the device to be tested, filtering processing is performed on the input high-voltage direct current through a fuse and a capacitor, and during the filtering processing, the size of filtering is determined according to the device to be tested.
According to the technical scheme, the voltage condition is high-voltage direct current, when different voltage conditions are input, the high-voltage direct current is input according to the device to be tested, the high-voltage direct current is performed according to the requirement of the high-voltage direct current needed by the device to be tested, and after the high-voltage direct current is input, the input high-voltage direct current is subjected to filtering processing by adopting a fuse and a capacitor according to the device to be tested.
According to the technical scheme, the device to be tested is tested under different input voltage conditions by inputting different voltage conditions, so that the dynamic on-resistance of the device to be tested under different conditions is obtained, the test result is more comprehensive, interference factors in signals of the input voltage conditions can be removed in the test circuit by carrying out filtering processing, the influence of the interference factors on the test result is reduced, the test accuracy of the power device is improved, in addition, when the filtering processing is carried out, the size of filtering is determined according to the device to be tested, and therefore the signals after the filtering processing cannot damage the device to be tested.
In an embodiment provided by the present invention, the double pulse signal is a PWM control signal, and when performing signal driving on the device under test according to the double pulse signal, the signal driving includes: receiving an input PWM control signal through the transfer interface PWM _ IN 1; filtering the PWM control signal to obtain a first processing control signal; driving the device to be tested according to the first processing control signal by adopting an isolation driver; the isolation driver supplies power through an IC power supply circuit, and an isolation power supply is adopted to output low-voltage direct-current voltage to supply power for the isolation driver in the IC power supply circuit.
According to the technical scheme, the double-pulse signal is the PWM control signal when the double-pulse signal is input through the grid driving signal, when signal driving is conducted on a device to be tested according to the double-pulse signal, the input PWM control signal is received through the switching port PWM _ IN1, then filtering processing is conducted on the received PWM control signal, and therefore a first processing control signal with interference signals removed is obtained, and then isolation driving is conducted on the PWM control signal through the isolation driver to drive the device to be tested IN an isolation mode. The isolation driver supplies power through an IC power supply circuit, and in the IC power supply circuit, an isolation power supply is adopted to output low-voltage direct-current voltage to supply power for the isolation driver.
According to the technical scheme, the PWM control signal is adopted, the harmonic distortion rate is minimum, the voltage utilization rate is high, the efficiency is optimal, irrelevant signals in the PWM control signal can be effectively removed through filtering the received PWM control signal, the accuracy of the control of the PWM control signal is high, the tested device is isolated and driven aiming at the PWM control signal through the isolation driver, the interference of the tested device in the driving process is reduced, the tested device is prevented from being influenced by interference factors, in addition, the isolation driver is supplied with power through the IC power supply circuit adopting the isolation power supply, human body threats cannot be caused to operating workers, the wide voltage performance is good, the damage of one module due to high-voltage discharge or other reasons and other modules can be prevented, and the maintenance cost is reduced.
In an embodiment of the present invention, the measuring voltage measurement data of the device under test by the clamping circuit includes: inputting a low-voltage direct-current voltage into the clamping circuit; when the device to be tested is turned off, analyzing the data information of the turn-off state, wherein in the data information of the turn-off state, the VDS position is high voltage, the diode D1 is cut off in the reverse direction, and the voltage of the VM position is equal to the voltage of the diode D1; when the device to be tested is conducted, analyzing conducting state data information, wherein in the conducting state data information, the VDS position is low voltage, the diode D1 is conducted, and the voltage of the VM position is obtained by measuring the voltage of the VM position; and obtaining voltage measurement data of the device to be measured according to the off-state data information and the on-state data information.
According to the technical scheme, when the voltage measurement data of the device to be measured is measured through the clamping circuit, low-voltage direct-current voltage is input into the clamping circuit; when the device to be tested is turned off, the data information of the turn-off state is analyzed, when the device to be tested is turned off, the VDS position is high voltage, and the diodeD1 is cut off reversely, and the voltage of the VM position is equal to the voltage of the diode D1; when the device to be tested is conducted, analyzing the conduction state data information, when the device to be tested is conducted, the VDS position is low voltage, the diode D1 is conducted, and the voltage of the VM position is obtained by measuring the voltage of the VM position; finally, voltage measurement data of the device to be measured is obtained according to the off-state data information and the on-state data information, when the device to be measured is on, the voltage at the VM position is equal to the voltage at the VDS position and the voltage of the diode D1, the voltage of the diode D1 is the on-state voltage drop of the diode, and is a fixed value, and therefore the voltage measurement data V of the device to be measured isDS＝VM-VD1Wherein V isMVoltage of VM position, VD1Is the voltage of diode D1.
According to the technical scheme, the simple clamping circuit is adopted, so that the cost consumption is low, the voltage measurement data can be easily obtained, the calculation confusion and the calculation error in the process of obtaining the voltage measurement data are avoided, and the accuracy of the power device test is improved.
In one embodiment provided by the invention, the two ends of the detection resistor are connected with the detection port, and when the detection resistor is detected, the probe of the oscilloscope current probe is connected to the detection port by adopting the oscilloscope current probe, so that the current flowing measurement value of the detection resistor is obtained.
According to the technical scheme, the detection port is formed in the connecting line of the two ends of the detection resistor, and when the current of the detection resistor is detected to flow through the measured value, the probe of the oscilloscope current probe is connected to the detection port through the oscilloscope current probe, so that the current flowing through the measured value of the detection resistor is obtained.
According to the technical scheme, the detection ports are formed in the connecting lines at the two ends of the detection resistor, so that the detection instrument can be directly connected to obtain measurement data when the current flowing value of the detection resistor is obtained, the measurement is facilitated, the accuracy is high, and the measurement data can be visually obtained through the current probe of the oscilloscope.
As shown in fig. 2, the present invention provides a power device testing system, and the power device testing method includes: the device comprises a module to be tested, a high-voltage input module, an inductance module, a clamping circuit module, a signal driving module and a test analysis module;
the module to be tested is used for placing a power device to be tested and taking the power device as the device to be tested to be connected into the test circuit;
the high-voltage input module is used for inputting different voltage conditions;
the signal driving module is used for inputting a double-pulse signal through a grid driving signal and carrying out signal driving on the device to be tested according to the double-pulse signal;
the inductance module is used for acquiring inductance through which current passes through by the inductance module in the conduction process of the device to be tested and adjusting the magnitude of the current according to the magnitude of the inductance;
the clamping circuit module is used for testing the device to be tested to obtain voltage measurement data of the device to be tested;
and the test analysis module is used for detecting the current flowing measured value of the detection resistor and obtaining the test result of the device to be tested by combining the voltage measurement data.
The power device test system in the above technical solution includes: the device comprises a module to be tested, a high-voltage input module, an inductance module, a clamping circuit module, a signal driving module and a test analysis module; the high-voltage input module is connected with the inductance module, the inductance module is connected to the module to be tested, and the module to be tested is also connected with the clamping circuit module, the signal driving module and the test analysis module respectively; when testing is carried out on the power device, the power device to be tested is placed into a module to be tested, and the power device to be tested is used as the device to be tested in the module to be tested and is connected into a testing circuit; then different voltage conditions and double-pulse signals are respectively input into the high-voltage input module and the signal driving module, in the conducting process of a device to be tested in the module to be tested, the inductance module obtains the inductance through which current passes, the current is adjusted according to the inductance, meanwhile, the signal driving module carries out signal driving on the device to be tested according to the double-pulse signals, at the moment, voltage measurement data of the device to be tested are measured through the clamping circuit, the current flowing measured value of the detection resistor is detected, and finally, the test result of the device to be tested is obtained according to the voltage measurement data and the current flowing measured value. In addition, the inductance module includes: diode D1, resistor and inductor L1, as shown in fig. 3, diode D1 is connected to the resistor and to inductor L1.
According to the technical scheme, the device to be tested is comprehensively tested by inputting different voltage conditions and double-pulse signals, test data is obtained in the conducting process of the device to be tested, dynamic test of dynamic conducting resistance values of the power device during working is achieved, test results of the power device are obtained according to the data of the dynamic test, interference reduction processing can be carried out in the high-voltage input module, the clamping circuit module and the signal driving module respectively, the influence of interference factors on the test results is reduced, and the precision of the test results is improved.
In an embodiment of the present invention, when different voltage conditions are input to the high voltage input module, the high voltage input module inputs a high voltage direct current according to the device to be tested, and the high voltage input module includes: a VDD _1 terminal, a fuse F1, an alternating current polar capacitor EC1, a GND1 terminal, a GND terminal, a first capacitor C1, a second capacitor C2, a third capacitor C3, a fourth capacitor C4 and a fifth capacitor C5; after the high-voltage direct current at the VDD _1 end is input, filtering processing is carried out on the input high-voltage direct current through the fuse F1, the alternating-current polar capacitor EC1, the GND1 end, the GND end, the first capacitor C1, the second capacitor C2, the third capacitor C3, the fourth capacitor C4 and the fifth capacitor C5, and during the filtering processing, the size of filtering is determined according to the device to be tested.
The technical scheme comprises that the high-voltage input module comprises: a VDD _1 terminal, a fuse F1, an alternating current polar capacitor EC1, a GND1 terminal, a GND terminal, a first capacitor C1, a second capacitor C2, a third capacitor C3, a fourth capacitor C4 and a fifth capacitor C5; the VDD _1 end is connected to a fuse F1, and then sequentially connected to an ac polarized capacitor EC1, a third capacitor C3, a fourth capacitor C4, a fifth capacitor C5, a first capacitor C1, and a second capacitor C2, as shown in fig. 4, the GND1 end is connected to the ac polarized capacitor EC1, the polarized capacitor EC1 is also connected to a GND end, when different voltage conditions are input to the high-voltage input module, high-voltage direct current determined according to the high-voltage direct current required by the device to be tested is input from the VDD _1 end, the input high-voltage direct current is filtered by the fuse F1, the ac polarized capacitor EC1, the GND1 end, the GND end, the first capacitor C1, the second capacitor C2, the third capacitor C3, the fourth capacitor C4, and the fifth capacitor C5, and the size of the filter is determined according to the device to be tested during the filter processing.
According to the technical scheme, the device to be tested is tested under different input voltage conditions by inputting different voltage conditions, so that the dynamic on-resistance of the device to be tested under different conditions is obtained, the test result is more comprehensive, interference factors in signals of the input voltage conditions can be removed in the test circuit by carrying out filtering processing, the influence of the interference factors on the test result is reduced, the variety of the signals input by the high-voltage input module is improved, the test accuracy of the power device is improved, in addition, when the filtering processing is carried out, the size of filtering is determined according to the device to be tested, and therefore the signals after the filtering processing cannot damage the device to be tested.
In one embodiment provided by the present invention, the signal driving module includes: a signal unit and a driving unit; the double-pulse signal input by the signal unit through the grid driving signal is a PWM control signal; the driving unit receives the PWM control signal input by the signal unit through a switching port PWM _ IN1, carries out filtering processing on the PWM control signal to obtain a first processing control signal, and then drives the device to be tested according to the first processing control signal by adopting an isolation driver; the isolation driver supplies power through an IC power supply circuit, and an isolation power supply is adopted to output low-voltage direct-current voltage to supply power for the isolation driver in the IC power supply circuit.
The signal driving module in the above technical solution is divided into a signal unit and a driving unit, wherein the signal unit is used for driving a dipulse signal input by a signal through a gate, and the input dipulse signal is a PWM control signal; the driving unit is used for driving the device to be tested according to the PWM control signal, and when the device to be tested is driven according to the PWM control signal, firstly, the PWM control signal input by the signal unit is received through the adapter PWM _ IN1, then, filtering processing is performed on the PWM control signal to obtain a first processing control signal, then, the device to be tested is driven according to the first processing control signal by using the isolation driver, as shown IN fig. 5, when filtering processing is performed on the PWM control signal, the device to be tested Q1 is driven by using the isolation driver U1 after filtering processing is performed through R2 and C8, and power is supplied to the isolation driver by using the IC power supply circuit, as shown IN fig. 6, the IC power supply circuit supplies power to the isolation driver by using the isolation power supply U3 according to the voltage required by the isolation driver.
According to the technical scheme, the PWM control signal is adopted, the harmonic distortion rate is minimum, the voltage utilization rate is high, the efficiency is optimal, irrelevant signals in the PWM control signal can be effectively removed through filtering the received PWM control signal, the accuracy of the control of the PWM control signal is high, the tested device is isolated and driven aiming at the PWM control signal through the isolation driver, the interference of the tested device in the driving process is reduced, the tested device is prevented from being influenced by interference factors, in addition, the isolation driver is supplied with power through the IC power supply circuit adopting the isolation power supply, human body threats cannot be caused to operating workers, the wide voltage performance is good, the damage of one module due to high-voltage discharge or other reasons and other modules can be prevented, and the maintenance cost is reduced.
In one embodiment provided by the present invention, the input of the clamping circuit in the clamping circuit module is a low voltage dc voltage; in the clamping circuit, when the device to be tested is turned off, the data information of the turn-off state is analyzed, in the data information of the turn-off state, the position of a VDS is high voltage, a diode D1 is turned off in the reverse direction, and the voltage of the position of a VM is equal to the voltage of a diode D1; when the device to be tested is conducted, analyzing conducting state data information, wherein in the conducting state data information, the VDS position is low voltage, the diode D1 is conducted, and the voltage of the VM position is obtained by measuring the voltage of the VM position; and obtaining voltage measurement data of the device to be measured according to the off-state data information and the on-state data information.
In the technical scheme, a low-voltage direct-current voltage is input to a clamping circuit in a clamping circuit module, and in the clamping circuit, as shown in fig. 7, when a device to be tested is turned off, turn-off state data information is analyzed, in the turn-off state data information, a high voltage is at the position of a VDS, a diode D1 is cut off in a reverse direction, and the voltage at the position of a VM is equal to the voltage of a diode D1; when the device to be tested is conducted, conducting state data information is analyzed, in the conducting state data information, the VDS position is low voltage, the diode D1 is conducted, and voltage of the VM position is obtained by measuring the voltage of the VM position; and obtaining voltage measurement data of the device to be measured according to the off-state data information and the on-state data information.
According to the technical scheme, the clamping circuit module is low in cost consumption by adopting a simple clamping circuit, voltage measurement data can be easily obtained, calculation confusion and calculation errors in the process of obtaining the voltage measurement data are avoided, and the accuracy of testing the power device is improved.
In one embodiment of the present invention, the test analysis module includes: a test unit and an analysis unit; the testing unit adopts an oscilloscope current probe to detect the detection resistor, and during detection, a detection port is arranged on a connecting line at two ends of the detection resistor, a probe of the oscilloscope current probe is connected to the detection port, and a current flowing measured value of the detection resistor is obtained.
The test analysis module in the above technical scheme comprises: the testing unit is used for detecting the detection resistor by adopting an oscilloscope current probe, the connecting lines at the two ends of the detection resistor are provided with detection ports, and when the detection is carried out, a probe of the oscilloscope current probe is connected to the detection ports, so that the current flowing measured value of the detection resistor is obtained. The analysis unit is used for obtaining current flowing measured value according to detection and voltage measured data obtained by the clamping circuit
And obtaining the dynamic resistance of the electric appliance to be tested, thereby obtaining the test result of the device to be tested.
According to the technical scheme, the detection ports are arranged on the connecting lines at the two ends of the detection resistor, so that the detection instrument can be directly connected to obtain measurement data when the current flowing value of the detection resistor is obtained, the measurement is convenient, the accuracy is high, and the measurement data can be visually obtained through the current probe of the oscilloscope.
In addition, after putting into the module that awaits measuring with the power device that awaits measuring, the module that awaits measuring carries out temperature monitoring to the device that awaits measuring, and temperature monitoring's process is realized through temperature monitoring device, and temperature monitoring device includes: temperature-sensing unit, data transmission unit, data analysis unit and early warning suggestion unit, temperature-sensing unit sets up in the module that awaits measuring, and is connected with data transmission unit, and data transmission unit connects between temperature-sensing unit and data analysis unit, realizes the data transmission between temperature-sensing unit and the data analysis unit, and data analysis unit still is connected with early warning suggestion unit, includes when temperature monitoring device is carrying out temperature monitoring to the device that awaits measuring:
the method comprises the steps that after a device to be tested is connected to a test circuit according to a preset frequency, the induction temperatures of a plurality of position points of the device to be tested are obtained for a plurality of times through a temperature induction unit, the induction temperatures of different position points obtained at the same time are analyzed, and the maximum value of the induction temperature of a key position is used as the monitoring temperature of the device to be tested during temperature induction, wherein the key position refers to the chip position of the device to be tested;
transmitting the monitoring temperature of the device to be detected during the temperature sensing to the data analysis unit in real time through the data transmission unit;
the monitored temperature for real-time transmission in the data analysis reaction is analyzed by the following formula:
in the above-mentioned formula,
is a first judgment value; beta is aiIs the second judgment value; a isiRepresenting the monitoring temperature of the device to be tested acquired for the ith time; a isi-1Representing the monitoring temperature of the device to be tested acquired at the (i-1) th time; a isi-2Representing the monitoring temperature of the device to be tested acquired in the (i-2) th time; t is t2The second preset threshold value is related to the normal temperature range of the device to be tested; t is t1The first preset threshold value is a positive number;
and when the first judgment value and the second judgment value are not positive numbers at the same time, the temperature of the device to be tested is considered to be abnormal, and at the moment, the warning prompting unit is used for reminding a worker.
The performance of the device to be tested is prevented from being influenced by overhigh temperature of the device to be tested in the process of testing the device to be tested by monitoring and reminding the temperature of the device to be tested, so that the testing effect of the device to be tested is influenced. And the real-time temperature of the device to be tested is subjected to double analysis through the first judgment value and the second judgment value, so that the phenomenon that the temperature of the device to be tested is heated too fast or too high is found in time, and the influence on the test process of the device to be tested is avoided. In addition, connect between temperature sensing unit and data analysis unit through the data transmission unit, realize the data transmission between temperature sensing unit and the data analysis unit, not only can also wireless transmission by wire transmission, wire transmission's limitation has been overcome, the drawback of temperature sensing unit and data analysis unit on the distance has been eliminated, make things convenient for the staff to use, and the temperature that comes discovery device under test through first judgement value increases too fast phenomenon, thereby reduce the harm of the too fast increase of temperature to the device under test, come discovery device under test high temperature phenomenon through second judgement value, thereby avoid the too high influence of temperature to the test data of device under test, and then improve the accuracy of testing to the device under test.
It will be understood by those skilled in the art that the first and second embodiments of the present invention are merely directed to different stages of application.
Other embodiments of the disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This application is intended to cover any variations, uses, or adaptations of the disclosure following, in general, the principles of the disclosure and including such departures from the present disclosure as come within known or customary practice within the art to which the disclosure pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the disclosure being indicated by the following claims.
It will be understood that the present disclosure is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the present disclosure is limited only by the appended claims.
Claims (10)
1. A power device testing method is characterized by comprising the following steps:
putting a power device to be tested into a module to be tested, and taking the power device as the device to be tested to be connected into a test circuit;
inputting different voltage conditions;
inputting a double-pulse signal through a grid driving signal;
in the conducting process of the device to be tested, the inductance through which the current passes is obtained through the inductance module, and the magnitude of the current is adjusted according to the magnitude of the inductance; performing signal driving on the device to be tested according to the double-pulse signal, and measuring voltage measurement data of the device to be tested through a clamping circuit; detecting a current flowing through the measurement value of the detection resistor;
and obtaining a test result of the device to be tested according to the voltage measurement data and the current flowing measurement value.
2. The power device testing method according to claim 1, wherein when different voltage conditions are input, high voltage direct current is input according to the device under test, and filtering processing is performed on the input high voltage direct current through a fuse and a capacitor, and when filtering processing is performed, the size of filtering is determined according to the device under test.
3. The power device testing method according to claim 1, wherein the double pulse signal is a PWM control signal, and when signal-driving the device under test according to the double pulse signal comprises: receiving an input PWM control signal through the transfer interface PWM _ IN 1; filtering the PWM control signal to obtain a first processing control signal; driving the device to be tested according to the first processing control signal by adopting an isolation driver; the isolation driver supplies power through an IC power supply circuit, and an isolation power supply is adopted to output low-voltage direct-current voltage to supply power for the isolation driver in the IC power supply circuit.
4. The power device testing method of claim 1, wherein the measuring voltage measurement data of the device under test by the clamping circuit comprises: inputting 8V direct current voltage into the clamping circuit; when the device to be tested is turned off, analyzing the data information of the turn-off state, wherein in the data information of the turn-off state, the position of the VDS is high voltage, the diode D1 is cut off in the reverse direction, and the voltage of the position VM is equal to the voltage of the diode D1; when the device to be tested is conducted, analyzing conducting state data information, wherein in the conducting state data information, the VDS position is low voltage, the diode D1 is conducted, and the voltage of the VM position is obtained by measuring the voltage of the VM position; and obtaining voltage measurement data of the device to be measured according to the off-state data information and the on-state data information.
5. The power device testing method according to claim 1, wherein a detection port is provided on a connection line of both ends of the detection resistor, and when the detection resistor is detected, an oscilloscope current probe is used to connect a probe of the oscilloscope current probe to the detection port, so as to obtain a current flow measurement value of the detection resistor.
6. A power device testing system is characterized in that the power device testing method comprises the following steps: the device comprises a module to be tested, a high-voltage input module, an inductance module, a clamping circuit module, a signal driving module and a test analysis module;
the module to be tested is used for placing a power device to be tested and taking the power device as the device to be tested to be connected into the test circuit;
the high-voltage input module is used for inputting different voltage conditions;
the signal driving module is used for inputting a double-pulse signal through a grid driving signal and carrying out signal driving on the device to be tested according to the double-pulse signal;
the inductance module is used for acquiring inductance through which current passes through by the inductance module in the conduction process of the device to be tested and adjusting the magnitude of the current according to the magnitude of the inductance;
the clamping circuit module is used for testing the device to be tested to obtain voltage measurement data of the device to be tested;
and the test analysis module is used for detecting the current flowing measured value of the detection resistor and obtaining the test result of the device to be tested by combining the voltage measurement data.
7. The power device testing system according to claim 6, wherein the high voltage input module inputs high voltage direct current according to the device under test when different voltage conditions are input, and the high voltage input module comprises: a VDD _1 terminal, a fuse F1, an alternating current polar capacitor EC1, a GND1 terminal, a GND terminal, a first capacitor C1, a second capacitor C2, a third capacitor C3, a fourth capacitor C4 and a fifth capacitor C5; after the high-voltage direct current at the VDD _1 end is input, filtering processing is carried out on the input high-voltage direct current through the fuse F1, the alternating-current polar capacitor EC1, the GND1 end, the GND end, the first capacitor C1, the second capacitor C2, the third capacitor C3, the fourth capacitor C4 and the fifth capacitor C5, and during the filtering processing, the size of filtering is determined according to the device to be tested.
8. The power device test system of claim 6, wherein the signal driving module comprises: a signal unit and a driving unit; the double-pulse signal input by the signal unit through the grid driving signal is a PWM control signal; the driving unit receives the PWM control signal input by the signal unit through a switching port PWM _ IN1, carries out filtering processing on the PWM control signal to obtain a first processing control signal, and then drives the device to be tested according to the first processing control signal by adopting an isolation driver; the isolation driver supplies power through an IC power supply circuit, and an isolation power supply is adopted to output low-voltage direct-current voltage to supply power for the isolation driver in the IC power supply circuit.
9. The power device test system of claim 1, wherein the input of the clamp circuit in the clamp circuit module is a low voltage DC voltage; in the clamping circuit, when the device to be tested is turned off, the data information of the turn-off state is analyzed, in the data information of the turn-off state, the position of a VDS is high voltage, a diode D1 is cut off in the reverse direction, and the voltage of a VM position is equal to the voltage of a diode D1; when the device to be tested is conducted, analyzing conducting state data information, wherein in the conducting state data information, the VDS position is low voltage, the diode D1 is conducted, and the voltage of the VM position is obtained by measuring the voltage of the VM position; and obtaining voltage measurement data of the device to be measured according to the off-state data information and the on-state data information.
10. The power device test system of claim 6, wherein the test analysis module comprises: a test unit and an analysis unit; the testing unit adopts an oscilloscope current probe to detect the detection resistor, and during detection, a detection port is arranged on the connecting line of the two ends of the detection resistor, and a probe of the oscilloscope current probe is connected to the detection port to obtain a current flowing measured value of the detection resistor.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115372709A (en) * | 2022-08-23 | 2022-11-22 | 湖南炬神电子有限公司 | Power device dynamic on-resistance measuring device |
| CN116047171A (en) * | 2023-03-14 | 2023-05-02 | 中山大学 | Characterization method and device for dynamic on-resistance of power semiconductor field effect transistor |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103163488A (en) * | 2011-12-17 | 2013-06-19 | 鸿富锦精密工业（深圳）有限公司 | Voltage testing device |
| CN105790554A (en) * | 2016-04-06 | 2016-07-20 | 杭州电子科技大学 | IGBT circuit having dual-isolation characteristic and control method thereof |
| CN108738350A (en) * | 2016-03-02 | 2018-11-02 | 德克萨斯仪器股份有限公司 | High-resolution power electronic device measures |
| CN109917192A (en) * | 2019-02-26 | 2019-06-21 | 浙江大学 | The test device of power MOSFET device conducting resistance and output capacitance based on attenuation oscillasion impulse |
| CN110850174A (en) * | 2019-11-08 | 2020-02-28 | 中山大学 | Voltage clamping circuit, device and system for testing dynamic resistance of wide bandgap semiconductor switching device |
| CN111257719A (en) * | 2020-03-05 | 2020-06-09 | 香港科技大学深圳研究院 | Active MOSFET voltage clamping circuit, clamping method and double-pulse test circuit |
| CN111426928A (en) * | 2018-12-24 | 2020-07-17 | 东南大学 | Dynamic resistance test circuit for gallium nitride device |
| CN111953238A (en) * | 2020-08-12 | 2020-11-17 | 中电凯杰科技有限公司 | Dual-channel safe torque turn-off circuit and method |
| CN111948505A (en) * | 2019-04-30 | 2020-11-17 | 中电普瑞科技有限公司 | Test circuit and control method for output characteristics of GaN power device |
| CN212008817U (en) * | 2020-03-05 | 2020-11-24 | 香港科技大学深圳研究院 | Active MOSFET voltage clamping circuit and double-pulse test circuit |
| CN113252987A (en) * | 2021-07-05 | 2021-08-13 | 西安众力为半导体科技有限公司 | Dynamic resistance test circuit of GaN HEMT power device |
| CN114217201A (en) * | 2021-12-15 | 2022-03-22 | 中南大学 | IGBT (insulated Gate Bipolar transistor) online junction temperature measuring circuit and measuring method thereof |
-
2022
- 2022-04-12 CN CN202210383083.1A patent/CN114740297B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103163488A (en) * | 2011-12-17 | 2013-06-19 | 鸿富锦精密工业（深圳）有限公司 | Voltage testing device |
| CN108738350A (en) * | 2016-03-02 | 2018-11-02 | 德克萨斯仪器股份有限公司 | High-resolution power electronic device measures |
| CN105790554A (en) * | 2016-04-06 | 2016-07-20 | 杭州电子科技大学 | IGBT circuit having dual-isolation characteristic and control method thereof |
| CN111426928A (en) * | 2018-12-24 | 2020-07-17 | 东南大学 | Dynamic resistance test circuit for gallium nitride device |
| CN109917192A (en) * | 2019-02-26 | 2019-06-21 | 浙江大学 | The test device of power MOSFET device conducting resistance and output capacitance based on attenuation oscillasion impulse |
| CN111948505A (en) * | 2019-04-30 | 2020-11-17 | 中电普瑞科技有限公司 | Test circuit and control method for output characteristics of GaN power device |
| CN110850174A (en) * | 2019-11-08 | 2020-02-28 | 中山大学 | Voltage clamping circuit, device and system for testing dynamic resistance of wide bandgap semiconductor switching device |
| CN111257719A (en) * | 2020-03-05 | 2020-06-09 | 香港科技大学深圳研究院 | Active MOSFET voltage clamping circuit, clamping method and double-pulse test circuit |
| CN212008817U (en) * | 2020-03-05 | 2020-11-24 | 香港科技大学深圳研究院 | Active MOSFET voltage clamping circuit and double-pulse test circuit |
| CN111953238A (en) * | 2020-08-12 | 2020-11-17 | 中电凯杰科技有限公司 | Dual-channel safe torque turn-off circuit and method |
| CN113252987A (en) * | 2021-07-05 | 2021-08-13 | 西安众力为半导体科技有限公司 | Dynamic resistance test circuit of GaN HEMT power device |
| CN114217201A (en) * | 2021-12-15 | 2022-03-22 | 中南大学 | IGBT (insulated Gate Bipolar transistor) online junction temperature measuring circuit and measuring method thereof |
Non-Patent Citations (4)
| Title |
|---|
| RUI LI ET AL.: "Dynamic on-state resistance evaluation of GaN devices under hard and soft switching conditions", 《 2018 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION》 * |
| RUI LI ET AL.: "Dynamic on-State Resistance Test and Evaluation of GaN Power Devices Under Hard- and Soft-Switching Conditions by Double and Multiple Pulses", 《 IEEE TRANSACTIONS ON POWER ELECTRONICS》 * |
| 孙鹏 等: "器件特性参数对SiC MOSFET静动态均流影响的实验研究", 《智能电网》 * |
| 杨树 等: "高性能垂直型 GaN-on-GaN 二极管的研究", 《人工晶体学报》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115372709A (en) * | 2022-08-23 | 2022-11-22 | 湖南炬神电子有限公司 | Power device dynamic on-resistance measuring device |
| CN116047171A (en) * | 2023-03-14 | 2023-05-02 | 中山大学 | Characterization method and device for dynamic on-resistance of power semiconductor field effect transistor |
| CN116047171B (en) * | 2023-03-14 | 2023-10-27 | 中山大学 | Characterization method and device for dynamic on-resistance of power semiconductor field effect transistor |
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