CN106771951A - Electronic power switch device junction temperature on-Line Monitor Device, detection circuit and method of testing - Google Patents

Electronic power switch device junction temperature on-Line Monitor Device, detection circuit and method of testing Download PDF

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Publication number
CN106771951A
CN106771951A CN201611267907.XA CN201611267907A CN106771951A CN 106771951 A CN106771951 A CN 106771951A CN 201611267907 A CN201611267907 A CN 201611267907A CN 106771951 A CN106771951 A CN 106771951A
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China
Prior art keywords
junction temperature
power switch
detection unit
electronic power
switch device
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CN201611267907.XA
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Inventor
谭国俊
耿程飞
李�浩
张经纬
王凯
吴义可
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China Mining Drives and Automation Co Ltd
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China Mining Drives and Automation Co Ltd
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Priority to CN201611267907.XA priority Critical patent/CN106771951A/en
Publication of CN106771951A publication Critical patent/CN106771951A/en
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2608—Circuits therefor for testing bipolar transistors
    • G01R31/2617—Circuits therefor for testing bipolar transistors for measuring switching properties thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2608—Circuits therefor for testing bipolar transistors
    • G01R31/2619—Circuits therefor for testing bipolar transistors for measuring thermal properties thereof

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

The present invention relates to a kind of junction temperature on-Line Monitor Device, the on-Line Monitor Device includes main control unit, power electronic devices to be measured, current detecting unit, Vce(on)Detection unit and AD collecting units, wherein main control unit include device driving unit and junction temperature computing unit electronic power switch device, and current detecting unit is used to flow through the electric current I of device under sampler conducting statec, Vce(on)The conduction voltage drop V of the section of a certain time rating that detection unit is used to gather under IGBT conducting statesce, by Vce(on)Analog circuit in detection unit draws equivalent conduction voltage drop signal VCe (on,AD collecting units complete analog current and voltage to the conversion of data signal, device driving unit, the drive signal V of the gate pole for providing device under testgAnd Vce(on)Detection unit switching signal Vp(mos), IGBT driver elements use digital drive mode, in IGBT driver elements adjust IGBT module gate pole switch controlling signal VgWith Vce(on)Detection unit switching signal Vp(mos)Between level change sequential relationship.

Description

Electronic power switch device junction temperature on-Line Monitor Device, detection circuit and method of testing
Technical field
The present invention relates to a kind of monitoring device, and in particular to a kind of electronic power switch device junction temperature on-Line Monitor Device, Belong to electric and electronic technical field.
Background technology
With the development of Power Electronic Technique industry, power electronic devices as energy transformation and the core devices of transmission, Its range of application is more and more extensive.When power converter system runs, because the switching loss and conduction loss of device can make it The temperature of chip is raised so that device inside material bears thermal stress, accelerates switching device degree of aging and crash rate, leads Mutagens parallel operation breaks down.
The junction temperature of switching device estimates that, to its reliability, health status and service life assessment are significant.Essence True measurement device junction temperature is the problem that power electronics leads urgent need to resolve.But can be straight currently without a more reliable method Connect measurement or estimation junction temperature.It is mostly, by measurement device substrate or heatsink temperature, counter to push away device junction temperature.In recent years, ground Study carefully personnel and propose some according to the thermo-responsive electrical parameter of device (Thermo-Sensitive Electrical Parameter TSEP) device junction temperature is estimated.I.e. when chip temperature changes with operating condition, the corresponding external electrical parameter of device under test Also can change therewith.By the measurement to thermo-responsive electrical parameter, you can junction temperature of chip is inversely estimated.
At present, it is conventional that conducting voltage mensuration, threshold voltage method are included carrying out junction temperature method of estimation according to TSEP, it is short Road current method, maximum voltage Variation Rate Method, maximum current slew rate method etc., these measuring conditions requirement are high, and extract more It is difficult.Wherein conduction voltage drop parameter is more sensitive to heat, but because device is in normal work, turning-on voltage is relatively low, typically Within several volts.The voltage born during shut-off is then even as high as kilovolt in several hectovolts.The voltage dynamic range change at device two ends It is larger, it is difficult to the other change of conduction voltage drop millivolt level that accurate measurement is caused due to temperature change.Those skilled in the art New scheme is had attempted to, but the problem never has to be properly settled.
The content of the invention
The present invention is just being directed to the technical problem for existing in the prior art, there is provided a kind of electronic power switch device junction temperature exists Line monitoring device, the technical scheme, by gate-controlled switch, can be gone using dynamic instrumentation conduction voltage drop method when in break-over of device The conduction voltage drop of electronic power switch device is detected, after device is turned off, detection is no longer gone, conduction voltage drop spy can be so reduced The dynamic range of slowdown monitoring circuit, greatly improves certainty of measurement.
To achieve these goals, technical scheme is as follows, and a kind of electronic power switch device junction temperature is supervised online Survey device, it is characterised in that the on-Line Monitor Device includes main control unit, electronic power switch device to be measured, electric current inspection Survey unit, Vce(on)Detection unit and AD collecting units, wherein main control unit include that device driving unit and junction temperature calculate single Unit, current detecting unit is used to flow through the electric current I of device under sampler conducting statec, Vce(on)Detection unit is used to gather electricity The conduction voltage drop V of the section of a certain time rating under power electronic switching device conducting statece, by Vce(on)Simulation in detection unit Circuit draws equivalent conduction voltage drop signal Vce(on, AD collecting units complete analog current and voltage to the conversion of data signal, device Part driver element, the drive signal V of the gate pole for providing device under testgAnd Vce(on)Detection unit switching signal Vp(mos), knot Warm computing unit, for the electric current I by sampler conducting statecWith conduction voltage drop Vce(on), computation of table lookup obtains device Working junction temperature Tj。
Used as a modification of the present invention, the current detecting unit uses current transformer or Rogowski coil or electricity One kind in resistance mensuration is detected.
As a modification of the present invention, the Vce(on)Detection unit, adopts comprising an electronic switch Q1, and voltage Sample circuit, the electronic switch Q1 is connected on the input of voltage sampling circuit.
As a modification of the present invention, the Vce(on)Detection unit makes electronic power switch device in electronic switch Q1 Access testing system in certain time period under opening state, opens under electronic power switch device other states with power electronics Close device junction temperature on-line detecting system to disconnect, so as to protect Vce(on)Detection unit simultaneously can accurate measurement electronic power switch device Conduction voltage drop under opening state.
As a modification of the present invention, the voltage sampling circuit, including resistance R7, R8, R9, R10, electric capacity C4, C5, C6 and operational amplifier U3, wherein resistance R7, R8, R9, R10, electric capacity C4, C5, C6 and operational amplifier U3, the R7's The other end connects one end of C4, while R9 is connected, the positive polarity input of one end and U3 of C5；The other end connection U3's of the C4 Negative polarity input and one end of R8, while connecting R10, one end of C6；The other end ground connection of the R8；The R10's is another The other end of end connection C6, while being connected to the output end Vce of U3.
Used as a modification of the present invention, the Rogowski coil sample circuit includes resistance R1, R2, R3, R4, R5, R6, electricity Hold C1, C2, C3 and operational amplifier U1, U2, the termination Rogowski coils of the R2 mono-, one end of another termination C1 and the positive pole of U1 Property input, the C1 the other end ground connection, the R1 one end ground connection, another termination U1 negative polarity input, while connect One end of R3 and C2；The other end of another termination C2 of the R3, while connecting the output of U1；The output connection C3 mono- of the U1 End；The other end of the C3 connects one end of R4, while connecting the positive polarity input of U2；The other end ground connection of the R4；It is described One end ground connection of R5, the negative polarity input of other end connection U2 and the one end with R6；The other end of the R6 connects the output of U2, U2 is output as Ic_ad.
It is provided with the detection circuit of electronic power switch device junction temperature on-Line Monitor Device, it is characterised in that the detection Circuit includes that bus direct voltage source Vdc, bus capacitor C, load inductance L, power diode D and IGBT module junction temperature are online Detecting system；Wherein, the positive pole of bus direct voltage source Vdc and bus capacitor C one end, load inductance L one end and the pole of power two Pipe D negative electrodes are connected, to be measured in the load inductance other end and power diode D anodes and IGBT module junction temperature on-line detecting system IGBT module colelctor electrode IGBT_C is connected, the IGBT module emitter stage IGBT_E to be measured in IGBT module junction temperature on-line detecting system Negative pole with the bus capacitor other end and bus direct voltage source Vdc is connected.
Electronic power switch device junction temperature using electronic power switch device junction temperature on-line monitoring detection circuit exists The testing procedure of line monitoring junction temperature detection device is as follows：
The switch controlling signal V of the electronic power switch device provided by driver elementgWith VceDetection unit switching signal Vp(mos)Between level change sequential；In t0-t3In time period, the switch controlling signal V of electronic power switch devicegIt is electricity high Flat, electronic power switch device to be measured is conducting state, the switch controlling signal of remaining time electronic power switch device gate pole VgIt is low level, electronic power switch device to be measured is off state；
In t1-t2In time period, Vce(on)Q1 conductings in detection unit so that Vce(on)Detection unit accesses IGBT module Junction temperature on-line detecting system, remaining time Vce(on)Q1 shut-offs in detection unit so that Vce(on)Detection unit and IGBT module Junction temperature on-line detecting system disconnects；Due to IGBT module in practical work process constantly open with shut-off, be ensure IGBT The high accuracy of module junction temperature on-line checking, it is necessary to assure t1 the and t2 moment falls in the range of t0 and t3；
When the service time ton of the switch controlling signal VIGBT of the IGBT module gate pole that driver element is provided is t0 and t3 Carve and determined by outside control unit, it is irrelevant with junction temperature detection device.IGBT prolongs after receiving and opening signal by opening Slow time tdon, after could be normal open-minded.tdonTime is determined by specific measured device, therefore the measurement moment must be in tdonWith Afterwards.For junction temperature measurement device, in this case it is not apparent that when the t3 moment arrives, it is therefore desirable to surveyed in IGBT opening processes as early as possible Amount Vce(on).In 1us, the 1us times depend on the speed of Acquisition Circuit to IGBT time of measuring, for the high speed amplifier time Can be with shorter.Q1 is turned off after being measured.Specific timing diagram is as shown in Figure 3.
Relative to prior art, the invention has the advantages that, 1) the technical scheme global design is ingenious, compact conformation； 2) technical scheme is applicable IGBT module junction temperature on-line checking, because IGBT module conduction voltage drop bears with IGBT module shut-off Busbar voltage difference it is larger, the error of common IGBT module conduction voltage drop detection circuit is larger；By V of the inventionce(on) The circuit of detection unit carries out conduction voltage drop sampling, can accurately extract the conduction voltage drop V under IGBT module conducting statece； By the Rogowski coil current sampling circuit in current detecting unit of the invention, IGBT module can be accurately extracted open-minded Conducting electric current I under statec；By conduction voltage drop Vce(on)With electric conduction IcAccurate measurement, and then accurately calculate IGBT moulds The junction temperature T of blockj；3) the technical scheme cost is relatively low, is easy to large-scale popularization and application.
Brief description of the drawings
Fig. 1 is invention overall structure diagram；
Fig. 2 is that IGBT module detects electrical block diagram；
Fig. 3 is test signal timing diagram, wherein, VgIt is the switch controlling signal of IGBT module gate pole, Vp(mos)It is VCEDetection Unit switch signal, IcIt is IGBT module conducting electric current, VceIt is IGBT module voltage, Vce(on)It is VceDetection unit output signal.
Fig. 4 is based on Rogowski coil electric current IcSample circuit schematic diagram；
Fig. 5 is conduction voltage drop Vce(on)Detection cell circuit schematic diagram；
Fig. 6 is junction temperature and collector current and the relation of on-state voltage drop.
Specific embodiment：
In order to deepen the understanding of the present invention, the present embodiment is described in detail below in conjunction with the accompanying drawings.
Embodiment 1：Referring to Fig. 1, a kind of electronic power switch device junction temperature on-Line Monitor Device, the on-Line Monitor Device Including main control unit, power electronic devices to be measured, current detecting unit, Vce(on)Detection unit and AD collecting units, wherein Main control unit includes device driving unit and junction temperature computing unit, in the technical scheme, electronic power switch device bag to be measured Containing conventional electronic power switch device, including MOSFET, IGBT etc.；Current detecting unit flows down for sampler conducting state Cross the electric current I of devicec, Vce(on)The conduction voltage drop of the section of a certain time rating that detection unit is used to gather under IGBT conducting states Vce, by Vce(on)Analog circuit in detection unit draws equivalent conduction voltage drop signal Vce(on, the completion simulation of AD collecting units Electric current and voltage to data signal conversion, device driving unit, the drive signal V of the gate pole for providing device under testgWith Vce(on)Detection unit switching signal Vp(mos), IGBT driver elements use digital drive mode, in IGBT driver elements adjust The switch controlling signal V of IGBT module gate polegWith Vce(on)Detection unit switching signal Vp(mos)Between level change sequential close System；Gate electrode drive signals VgIt is the switching signal of device under test, vulnerabilities scan signal mainly is amplified to drive and treated by the unit Survey the signal of device.Vp(mos)It is conduction voltage drop Vce(on)Detection unit provides switching signal, and letter is opened when device under test is received Number VgAfterwards, device is in the conduction state, is now adapted to Vce(on)Detection unit goes to detect conduction voltage drop.Can be by Vce(on)Detection is single Switch connection inside unit, it is necessary to internal switch is disconnected after detection is finished.Junction temperature computing unit, junction temperature and the electricity of device Stream IcWith the V of conduction voltage dropce(on)Relation can use Tj=f (Vce(on),Ic) represent.The equation for heterogeneous linear, can by from Junction temperature and I are set up in line measurementc、Vce(on)Form.Junction temperature computing unit is mainly by the electric current I of sampler conducting statecWith Conduction voltage drop Vce(on), the working junction temperature T of device is obtained by computation of table lookupj；The current detecting unit uses current transformer Or the one kind in Rogowski coil or resistance method of temperature measurement is detected.
The Vce(on)Detection unit, the conduction voltage drop V for gathering the section of a certain time rating under IGBT conducting statesce, Vce(on)Detection unit, as the method for switch, makes V using concatenation MOSFETce(on)Detection unit is under IGBT module opening state Certain time period in access testing system, it is disconnected with IGBT module junction temperature on-line detecting system under IGBT module other states Open, so as to protect Vce(on)Conduction voltage drop under detection unit and energy accurate measurement IGBT module opening state.Due to IGBT module The conduction voltage drop opened much smaller than shut-off voltage, extract the method for IGBT module conduction voltage drop not by conduction voltage drop and close by tradition Power-off pressure is separated, and causes measurement dynamic range excessive, so as to cause conduction voltage drop to extract error greatly, by V of the inventionCE(on) Detection unit can ensure the pinpoint accuracy of conduction voltage drop.The Vce(on)Detection unit, comprising an electronic switch Q1, and Voltage sampling circuit, the electronic switch Q1 is connected on the input of voltage sampling circuit.The Vce(on)Detection unit makes electric power Electronic switching device access testing system in the certain time period under electronic switch Q1 opening states, in electronic power switch device Disconnected with electronic power switch device junction temperature on-line detecting system under part other states, so as to protect Vce(on)Detection unit and energy Conduction voltage drop under accurate measurement electronic power switch device opening state.Referring to Fig. 5, the voltage sampling circuit, including electricity Resistance R7, R8, R9, R10, electric capacity C4, C5, C6 and operational amplifier U3, wherein resistance R7, R8, R9, R10, electric capacity C4, C5, C6 And the other end of operational amplifier U3, the R7 connects one end of C4, while connecting R9, one end of C5 and the positive polarity of U3 are defeated Enter；The negative polarity input of the other end connection U3 of the C4 and one end of R8, while connecting R10, one end of C6；The R8's The other end is grounded；The other end of the R10 connects the other end of C6, while being connected to the output end Vce of U3.
Referring to Fig. 4, the Rogowski coil sample circuit include resistance R1, R2, R3, R4, R5, R6, electric capacity C1, C2, C3 with And operational amplifier U1, U2, the R2 mono- termination Rogowski coil, one end of another termination C1 and the positive polarity input of U1, institute State the other end ground connection of C1, one end ground connection of the R1, the negative polarity input of another termination U1, while connecting the one of R3 and C2 End；The other end of another termination C2 of the R3, while connecting the output of U1；Output connection C3 one end of the U1；The C3 The other end connect R4 one end, while connect U2 positive polarity input；The other end ground connection of the R4；One termination of the R5 Ground, the negative polarity input of other end connection U2 and the one end with R6；The other end of the R6 connects the output of U2, and U2 is output as Ic_ad。
Embodiment 2：Referring to Fig. 2, the IGBT detection electricity of electronic power switch device junction temperature on-Line Monitor Device is provided with Road, the detection circuit includes bus direct voltage source Vdc, bus capacitor C, load inductance L, power diode D and IGBT Module junction temperature on-line detecting system；Wherein, the positive pole of bus direct voltage source Vdc and bus capacitor C one end, load inductance L mono- End is connected with power diode D negative electrodes, the load inductance other end and power diode D anodes and IGBT module junction temperature on-line checking IGBT module colelctor electrode IGBT_C to be measured in system is connected, the IGBT module to be measured in IGBT module junction temperature on-line detecting system Emitter stage IGBT_E is connected with the negative pole of the bus capacitor other end and bus direct voltage source Vdc.
Embodiment 3：Referring to Fig. 3, using the test of the IGBT module junction temperature detection device of IGBT module detection circuit Step is as follows：Driven according to the IGBT shown in Fig. 3 and mos driver' s timings figure coordinates, complete the measurement of high accuracy conduction voltage drop, t0-t3In time period, the switch controlling signal V of IGBT module gate polegIt is high level, IGBT module to be measured is conducting state, remaining The switch controlling signal V of time IGBT module gate polegIt is low level, IGBT module to be measured is off state；In t1-t2Time period It is interior, Vce(on)Q1 conductings in detection unit so that Vce(on)Detection unit accesses IGBT module junction temperature on-line detecting system, remaining Time Vce(on)Q1 shut-offs in detection unit so that Vce(on)Detection unit disconnects with IGBT module junction temperature on-line detecting system. Due to IGBT module in practical work process constantly open with shut-off, for ensure IGBT module junction temperature on-line checking it is high-precision Degree, it is necessary to assure t1 the and t2 moment falls in the range of t0 and t3.The switch control of the IGBT module gate pole that driver element is provided The service time ton of signal VIGBT is to be determined by outside control unit at t0 the and t3 moment, irrelevant with junction temperature detection device. IGBT after receiving and opening signal, by open time delay tdon, after could be normal open-minded.tdonTime is by being specifically tested Device determines, therefore the measurement moment must be in tdonAfter.For junction temperature measurement device, in this case it is not apparent that when the t3 moment arrives Come, it is therefore desirable to measure V in IGBT opening processes as early as possiblece(on).IGBT time of measuring is depended in 1us, 1us times The speed of Acquisition Circuit, for high speed amplifier, the time can be with shorter.Q1 is turned off after being measured.Specific timing diagram As shown in Figure 3.
Operation principle：
Off-line test sets up measured device junction temperature and electric current I firstcWith the V of conduction voltage dropce(on)Related table, by public affairs Formula Tj=f (Vce(on),Ic) represent.Fig. 6 is device junction temperature and electric current IcWith the V of conduction voltage dropce(on)Relation curve.In reality In IGBT switching processes, according to Fig. 3 real time records IcAnd Vce(on), according to the prior form set up, device is obtained by look-up table Working junction temperature.By taking certain semiconductor manufacturer IGBT working conditions as an example, the electric current I of side in IGBT switching processescIt is 150A, Vce(on)It is 3.1V, junction temperature can be obtained by tabling look-up for 60 DEG C.
Junction temperature computing unit, junction temperature and the electric current I of devicecWith the V of conduction voltage dropce(on)Relation can use Tj=f (Vce(on), Ic) represent.The equation is non-linear, can set up junction temperature and I by off-line measurementc、Vce(on)Form, as shown in Figure 6.Knot Warm computing unit is mainly by the electric current I of sampler conducting statecWith conduction voltage drop Vce(on), device is obtained by computation of table lookup The working junction temperature T of partj；
It should be noted that above-described embodiment, not for limiting protection scope of the present invention, in above-mentioned technical proposal On the basis of done equivalents or replacement each fall within the scope that the claims in the present invention are protected.

Claims (8)

1. a kind of electronic power switch device junction temperature on-Line Monitor Device, it is characterised in that the on-Line Monitor Device includes master Control unit, electronic power switch device to be measured, current detecting unit, Vce(on)Detection unit and AD collecting units, wherein main Control unit includes device driving unit and junction temperature computing unit, and current detecting unit is used to be flowed through under sampler conducting state The electric current I of devicec, Vce(on)The section of a certain time rating that detection unit is used to gather under electronic power switch device conducting state Conduction voltage drop Vce, by Vce(on)Analog circuit in detection unit draws equivalent conduction voltage drop signal VCe (on,AD collecting units are complete Into analog current and voltage to the conversion of data signal, device driving unit, the driving letter of the gate pole for providing device under test Number VgAnd Vce(on)Detection unit switching signal VP (mos),Junction temperature computing unit, for the electric current I by sampler conducting statec With conduction voltage drop Vce(on), computation of table lookup obtains the working junction temperature T of devicej。
2. electronic power switch device junction temperature on-Line Monitor Device according to claim 1, it is characterised in that the electric current Detection unit is detected using the one kind in current transformer or Rogowski coil or resistance method of temperature measurement.
3. electronic power switch device junction temperature on-Line Monitor Device according to claim 1 and 2, it is characterised in that described Vce(on)Detection unit, comprising an electronic switch Q1, and voltage sampling circuit, the electronic switch Q1 is connected on voltage and adopts The input of sample circuit.
4. electronic power switch device junction temperature on-Line Monitor Device according to claim 3, it is characterised in that described Vce(on)Detection unit makes electronic power switch device that detection system is accessed in the certain time period under electronic switch Q1 opening states System, disconnects, with electronic power switch device junction temperature on-line detecting system under electronic power switch device other states so as to protect Shield Vce(on)Conduction voltage drop under detection unit and energy accurate measurement electronic power switch device opening state.
5. electronic power switch device junction temperature on-Line Monitor Device according to claim 3, it is characterised in that the voltage Sample circuit, including resistance R7, R8, R9, R10, electric capacity C4, C5, C6 and operational amplifier U3, wherein resistance R7, R8, R9, The other end of R10, electric capacity C4, C5, C6 and operational amplifier U3, the R7 connects one end of C4, while connecting R9, the one of C5 The positive polarity of end and U3 is input into；The negative polarity input of the other end connection U3 of the C4 and one end of R8, while R10 is connected, One end of C6；The other end ground connection of the R8；The other end of the R10 connects the other end of C6, while being connected to the output of U3 End Vce.
6. electronic power switch device junction temperature on-Line Monitor Device according to claim 2, it is characterised in that the Roche Coil sample circuit includes resistance R1, R2, R3, R4, R5, R6, electric capacity C1, C2, C3 and operational amplifier U1, U2, the R2 One termination Rogowski coil, one end of another termination C1 and the positive polarity input of U1, the other end ground connection of the C1, the R1's One end is grounded, the negative polarity input of another termination U1, while connecting one end of R3 and C2；Another termination C2's of the R3 is another End, while connecting the output of U1；Output connection C3 one end of the U1；The other end of the C3 connects one end of R4, while connecting Connect the positive polarity input of U2；The other end ground connection of the R4；One end ground connection of the R5, the negative polarity input of other end connection U2 With the one end with R6；The other end of the R6 connects the output of U2, and U2 is output as Ic_ad.
7. the detection circuit of electronic power switch device junction temperature on-Line Monitor Device is provided with, it is characterised in that the detection electricity Examined online including bus direct voltage source Vdc, bus capacitor C, load inductance L, power diode D and IGBT module junction temperature on road Examining system；Wherein, the positive pole of bus direct voltage source Vdc and bus capacitor C one end, load inductance L one end and power diode D Negative electrode is connected, to be measured in the load inductance other end and power diode D anodes and IGBT module junction temperature on-line detecting system IGBT module colelctor electrode IGBT_C is connected, the IGBT module emitter stage IGBT_E to be measured in IGBT module junction temperature on-line detecting system Negative pole with the bus capacitor other end and bus direct voltage source Vdc is connected.
8. using the electronic power switch device of the on-line monitoring detection circuit of electronic power switch device junction temperature described in claim 7 The testing procedure of part junction temperature on-line monitoring junction temperature detection device is as follows：The electronic power switch device provided by driver element is opened Close control signal VgWith VceDetection unit switching signal Vp(mos)Between level change sequential；In t0-t3In time period, electric power electricity The switch controlling signal V of sub switch devicegIt is high level, electronic power switch device to be measured is conducting state, remaining time electricity The switch controlling signal V of power electronic switching device gate polegIt is low level, electronic power switch device to be measured is off state； t1-t2In time period, Vce(on)Q1 conductings in detection unit so that Vce(on)Detection unit accesses IGBT module junction temperature and examines online Examining system, remaining time Vce(on)Q1 shut-offs in detection unit so that Vce(on)Detection unit is examined online with IGBT module junction temperature Examining system disconnects；Due to IGBT module in practical work process constantly open with shut-off, for ensure IGBT module junction temperature exist The high accuracy of line detection, it is necessary to assure t1 the and t2 moment falls in the range of t0 and t3.
CN201611267907.XA 2016-12-31 2016-12-31 Electronic power switch device junction temperature on-Line Monitor Device, detection circuit and method of testing Pending CN106771951A (en)

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CN107703432A (en) * 2017-09-27 2018-02-16 西安索普电气技术有限公司 A kind of electronic power switch device junction temperature online test method and detection circuit
CN109342913A (en) * 2018-10-23 2019-02-15 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） IGBT junction temperature monitoring system
CN109444706A (en) * 2018-11-16 2019-03-08 国网江苏省电力有限公司盐城供电分公司 A kind of power electronic devices dynamic switching characteristic test method
CN109581179A (en) * 2018-12-24 2019-04-05 天津城建大学 A kind of insulated gate bipolar transistor junction temperature measurement method
CN109633405A (en) * 2019-01-28 2019-04-16 山西大学 A kind of junction temperature calibration and radiating subassembly capability evaluating device based on bias current precompensation
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CN113671340A (en) * 2021-10-21 2021-11-19 佛山市联动科技股份有限公司 Switch parameter testing device of IGBT
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CN107703432A (en) * 2017-09-27 2018-02-16 西安索普电气技术有限公司 A kind of electronic power switch device junction temperature online test method and detection circuit
CN112740052A (en) * 2018-09-21 2021-04-30 赖茵豪森机械制造公司 Analyzing operation of power semiconductor device
CN109342913A (en) * 2018-10-23 2019-02-15 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） IGBT junction temperature monitoring system
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CN109581179A (en) * 2018-12-24 2019-04-05 天津城建大学 A kind of insulated gate bipolar transistor junction temperature measurement method
CN109633405A (en) * 2019-01-28 2019-04-16 山西大学 A kind of junction temperature calibration and radiating subassembly capability evaluating device based on bias current precompensation
CN109633405B (en) * 2019-01-28 2020-11-10 山西大学 Junction temperature calibration and heat dissipation assembly performance evaluation device based on bias current precompensation
CN110022141B (en) * 2019-03-26 2023-12-12 瓴芯电子科技(无锡)有限公司 Driving device of power device and method for acquiring real-time state of power device
CN110022141A (en) * 2019-03-26 2019-07-16 瓴芯电子科技(无锡)有限公司 The driving device of power device and the method for obtaining power device real-time status
CN110488172A (en) * 2019-07-12 2019-11-22 全球能源互联网研究院有限公司 A kind of high-power IGBT junction temperature detection circuit, system and method
CN110426618A (en) * 2019-07-16 2019-11-08 中国第一汽车股份有限公司 A kind of device lifetime prediction technique, device, vehicle and storage medium
CN111525779A (en) * 2020-03-16 2020-08-11 浙江大学 Power device series connection voltage-sharing circuit containing device junction temperature and method thereof
CN111426933A (en) * 2020-05-19 2020-07-17 浙江巨磁智能技术有限公司 Safety type power electronic module and safety detection method thereof
CN111781480A (en) * 2020-05-28 2020-10-16 南方电网科学研究院有限责任公司 Junction temperature monitoring method, device and system of IGBT
CN111781480B (en) * 2020-05-28 2022-05-20 南方电网科学研究院有限责任公司 IGBT junction temperature monitoring method, device and system
CN111781485A (en) * 2020-06-24 2020-10-16 珠海格力电器股份有限公司 Diode detection method and device
CN112014707A (en) * 2020-07-13 2020-12-01 北京工业大学 Method for measuring and controlling junction temperature of SiC power VDMOS device in power cycle experiment
CN111812479A (en) * 2020-07-17 2020-10-23 中国科学院电工研究所 IGBT on-state voltage drop on-line measuring circuit and junction temperature detection method
CN111812479B (en) * 2020-07-17 2023-03-28 中国科学院电工研究所 IGBT on-state voltage drop on-line measuring circuit and junction temperature detection method
CN111830389A (en) * 2020-07-31 2020-10-27 徐州中矿大传动与自动化有限公司 IGBT junction temperature estimation system and method based on emitter power terminal temperature
CN111830389B (en) * 2020-07-31 2023-10-20 江苏国传电气有限公司 IGBT junction temperature estimation system and method based on emitter power terminal temperature
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CN112557860A (en) * 2020-11-02 2021-03-26 中国南方电网有限责任公司超高压输电公司广州局 Aging method of IGBT switch of buck converter circuit under power frequency
CN112946450A (en) * 2021-01-29 2021-06-11 陕西半导体先导技术中心有限公司 Power semiconductor device convenient for junction temperature detection and junction temperature measuring method thereof
CN112986781A (en) * 2021-02-10 2021-06-18 中国科学院电工研究所 Junction temperature online monitoring data verification system and method
CN113030682B (en) * 2021-03-12 2023-07-28 中国科学院电工研究所 High-precision junction temperature online monitoring method and system
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CN113030682A (en) * 2021-03-12 2021-06-25 中国科学院电工研究所 High-precision junction temperature online monitoring method and system
CN112953272A (en) * 2021-03-12 2021-06-11 上海电气集团股份有限公司 Power electronic conversion device drive online self-checking method
CN113253085A (en) * 2021-05-18 2021-08-13 合肥恒钧检测技术有限公司 Power cycle test method and system for power semiconductor device
CN113376497A (en) * 2021-06-09 2021-09-10 新风光电子科技股份有限公司 Online monitoring method suitable for junction and aging information of power semiconductor device
CN113671340A (en) * 2021-10-21 2021-11-19 佛山市联动科技股份有限公司 Switch parameter testing device of IGBT
CN115166459A (en) * 2022-06-28 2022-10-11 中国第一汽车股份有限公司 Junction temperature detection device, junction temperature detection method, electronic equipment and storage medium
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