CN112557860A - Aging method of IGBT switch of buck converter circuit under power frequency - Google Patents
Aging method of IGBT switch of buck converter circuit under power frequency Download PDFInfo
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- CN112557860A CN112557860A CN202011204152.5A CN202011204152A CN112557860A CN 112557860 A CN112557860 A CN 112557860A CN 202011204152 A CN202011204152 A CN 202011204152A CN 112557860 A CN112557860 A CN 112557860A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2608—Circuits therefor for testing bipolar transistors
- G01R31/2617—Circuits therefor for testing bipolar transistors for measuring switching properties thereof
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/08—Measuring electromagnetic field characteristics
- G01R29/0807—Measuring electromagnetic field characteristics characterised by the application
- G01R29/0814—Field measurements related to measuring influence on or from apparatus, components or humans, e.g. in ESD, EMI, EMC, EMP testing, measuring radiation leakage; detecting presence of micro- or radiowave emitters; dosimetry; testing shielding; measurements related to lightning
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
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Abstract
The invention discloses an aging method of a buck converter circuit IGBT switch under power frequency, which ages an IGBT used in a chopper unit by increasing collector-emitter current of a load, namely I of the important valueCEThe current causes an increase in the junction temperature, up to 200 ℃, beyond the maximum junction temperature value. The invention fills the blank of the IGBT device in the aspect of aging EMI test, compared with aging methods of other kinds of power electronic devices for acquiring electromagnetic radiation, the invention has simple circuit, does not need to carry out lengthy power accelerated circulation, is economic and fast, can effectively improve the efficiency and save the labor and time cost.
Description
Technical Field
The invention relates to the technical field of testing of switching devices, in particular to an aging method of an IGBT switch of a buck converter circuit under power frequency.
Background
Active components (MOSFET, IGBT, JFET …) used in static converter circuits have many severe stress environments during operation, such as: high voltage, high current, high switching frequency, high junction temperature, etc. The frequent occurrence of these conditions will lead to a damaging operation at the component level and even further to the occurrence of failures. These typical degradation problems will, among other things, lead to the evolution of conducted and radiated electromagnetic interference (EMI), further exacerbating the aging of the device and severely reducing its lifetime.
At present, aging EMI tests for power MOSFET devices, high-frequency JFETs and other devices are proposed, and related aging EMI tests for IGBTs are not proposed.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a novel aging method for an IGBT switch applied to a buck converter circuit (in a chopper series type), the method can discuss and track the electromagnetic radiation condition in the aging process very conveniently and rapidly, fills the blank in the aspect of an IGBT device, and compared with aging methods for electromagnetic radiation acquisition of other types of power electronic devices, the method has the advantages of simple circuit, no need of long power acceleration circulation, economy, rapidness, effective efficiency improvement, manpower saving and time cost saving.
In order to achieve the purpose, the technical scheme of the invention is as follows:
a method for aging IGBT switch of buck converter circuit under power frequency includes aging IGBT used in chopper unit by increasing collector-emitter current of loadCEThe current causes an increase in junction temperature, up to 200 ℃, beyond a maximumLarge temperature value of the knot.
Furthermore, the IGBT is limited, the current value is more than or equal to 4.5A, the switching frequency is more than or equal to 50kHz, and the operation of the IGBT at high junction temperature is ensured.
Further, a large current value and a large amount of kinetic energy are guided to the emitter by the collector.
Further, the N + region of the IGBT is affected by ionization, and a hot carrier injection phenomenon occurs, which is called a drift region.
Further, the IGBT was installed in a power frequency circuit, and a voltage of 30V was switched with a current of 4.5A at a frequency of 50kHz to reach an aging junction temperature of 200 ℃.
Further, to measure conducted electromagnetic interference, a LISN filter (line impedance stabilization network) is inserted that allows measurements in both common and differential modes.
Further, in order to secure a level of accuracy while reducing the amount of extraction work, the interference is extracted at an acceptable level of accuracy, and when the power current is less than 50A, the conducted interference is measured in a range of 10kHz to 50 MHz.
Further, after the conducted interference waveform is collected, a simple fast Fourier transform calculation is adopted to derive the waveform spectrum.
Furthermore, by observing the change of the peak-to-peak amplitude of the disturbances before and after the IGBT ages when the IGBT is turned on and turned off, the correlation between the aging effect of the device and the on-off state of the switch can be effectively obtained.
Further, the propagation and evolution conditions of the electromagnetic interference in the aging test process are obtained by observing the evolution of the conducted electromagnetic interference before and after the aging of the IGBT.
Compared with the prior art, the invention has the beneficial effects that:
1. the invention fills the blank of the IGBT device in the aspect of aging EMI test, compared with aging methods of other kinds of power electronic devices for acquiring electromagnetic radiation, the invention has simple circuit, does not need to carry out lengthy power accelerated circulation, is economic and fast, can effectively improve the efficiency and save the labor and time cost.
2. The invention can research the influence of the aging IGBT on the buck converter circuit and analyze the degradation effect caused by the aging of the IGBT.
3. The invention can discuss and track the electromagnetic radiation condition in the aging process very conveniently and rapidly.
4. The invention can synchronously and visually observe the change condition of the IGBT switching time along with aging and the propagation and evolution conditions of electromagnetic interference.
Drawings
Fig. 1 shows an N-type IGBT structure.
FIG. 2 is a circuit for aging and characterization.
FIG. 3 is a pre-aging VMC.
FIG. 4 is VCEAnd VGE Waveform component # 1.
FIG. 5 is VMCOff time waveform #2 (before and after 240 minutes aging).
FIG. 6 is VMC Time waveform # 2 on (before and after 240 minutes aging).
FIG. 7 is VMCOff time waveform #3 (before and after 360 minutes aging).
FIG. 8 is VMC Time waveform # 3 on (before and after 360 minutes aging).
Fig. 9 shows the FFT common mode voltage before aging of the 3 devices.
Fig. 10 is a time waveform # 1 for the FFT common mode voltage device.
FIG. 11 is a time waveform # 2 for the FFT common mode voltage device.
Fig. 12 is a time waveform # 3 for the FFT common mode voltage device.
Fig. 13 is a fall time waveform # 1 of the device.
Fig. 14 shows a rise time waveform # 2 of the device.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
The invention provides an aging method of a buck converter circuit IGBT switch under power frequency, which is characterized in that chopping waves are paired by increasing collector-emitter current of a loadThe IGBTs used in the cells are aged. I of this important valueCEThe current causes an increase in the junction temperature, up to 200 ℃, beyond the maximum junction temperature value. The accelerated aging test technology is carried out on the IGBT transistor to search the experimental research of the influence of accelerated aging on the evolution of conducted EMI in a static converter circuit.
Further, many limitations on IGBTs are proposed — high IGBT current values (> 4.5A), high switching frequencies (> 50 kHz). These conditions will ensure that it operates at high junction temperatures.
Further, a large current value and a large amount of kinetic energy are guided to the emitter through the collector.
Further, the IGBT is characterized in that the N + region is affected by ionization, and a Hot Carrier Injection (HCI) phenomenon occurs, which is called a drift region.
Further, by installing the IGBT in a power frequency circuit, a voltage of 30 volts was switched with a current of 4.5 amps at a frequency of 50khz to achieve an aging junction temperature of about 200 ℃.
Meanwhile, to measure conducted electromagnetic interference, a LISN filter (line impedance stabilization network) is inserted that allows measurements in two modes, common and differential.
In order to guarantee a level of accuracy while reducing the amount of extraction work, the invention extracts the interference at an acceptable level of accuracy. When the power current is less than 50A, the conducted interference is measured in the range of 10kHz to 50 MHz.
Further, after the conducted interference waveform is collected, a simple fast fourier transform calculation may be used to derive the waveform spectrum.
Furthermore, by observing the change of the peak-to-peak amplitude of the disturbances before and after the aging of the IGBT when the IGBT is switched on and switched off, the invention can effectively obtain the correlation between the aging effect of the device and the switching-on and switching-off of the switch;
furthermore, the invention can simply observe the evolution of the conducted electromagnetic interference before and after the aging of each part, improve the research efficiency of the electromagnetic interference in the aging test and intuitively obtain the propagation and evolution conditions of the electromagnetic interference in the aging test.
Meanwhile, the invention can visually detect the change of the switching time of the transistor along with the aging time, and further discuss the change trend of the switching time along with the aging by combining the propagation condition of electromagnetic interference.
The specific implementation method comprises the following steps:
the IGBT to be tested shown in fig. 1 was inserted into a chopper circuit having a frequency of 50kHz shown in fig. 2, a voltage of 30V switched with a current of 4.5A and a junction temperature of about 200 ℃.
To measure conducted electromagnetic interference, a LISN filter (line impedance stabilization network) is inserted.
The LISN selected in this example is the LISN specified in the GAM EG 13 standard. Referring to fig. 2: c1, C2 ═ 220 nF; r1 and R2 are 47 Ω.
The LISN on the load side of this embodiment is low impedance and therefore the conducted interference will be turned off by the C1, C2 capacitance and the resistors R1, R2 ohms, which are used to measure conducted interference.
VMC＝(VR1+VR2)/2
After the conducted interference waveform is collected, a simple fast Fourier transform calculation is used to derive the waveform spectrum.
In fig. 3, the total commutation period is given, i.e. the common mode voltage V before agingMCThe waveform of (2). It was found that at switch-off VMC(up to 6.5V), the amplitude of the signal is greater than at switch-off VMC(not more than 2V). It is also noted that the resonance is higher when switched off than when switched off.
The time waveforms of the common mode voltage before and after component aging are given in fig. 5 to 8. Of these curves, this example specifically investigated the evolution of the peak-to-peak amplitude.
Table 1 summarizes the change in peak-to-peak amplitude of these perturbations on and off before and after aging.
TABLE 1
The data in table 1 show that the peak-to-peak amplitude increases after aging. It is also noted that the aging effect is more important when turned off than when turned on.
Further, the present invention performs aging on a plurality of IGBT elements under the same conditions, but for different aging times.
a. By observing the change of the amplitude between peaks of the disturbances before and after the IGBT ages when the IGBT is turned on and turned off, the correlation between the aging effect of the device and the on-off state of the switch is researched;
b. observing a common-mode voltage spectrum before the component is aged, and comparing the research curves to obtain the common-mode voltage spectrum with the same shape;
c. and (c) observing the evolution of the conducted electromagnetic interference before and after the aging of each component in the b, and the relation between the amplitude of the conducted electromagnetic interference and the aging time.
In fig. 9, the common mode voltage spectrum before all components are aged is given. The results show that the curves have the same shape, but different amplitudes; these variations are due to the variation of the physical parameter from one component to another.
Fig. 9 to 12 show the evolution of the conducted electromagnetic interference before and after aging of the components. The results show that the magnitude of the conducted electromagnetic interference depends mainly on the aging time. More specifically, as aging time increases, interference increases.
Table 2 shows the evolution of the main peak amplitude of the conducted common mode before and after different aging times.
TABLE 2
The switching time of the transistor was further investigated as a function of aging time.
FIGS. 13 and 14 show V, respectivelyCEMethod for extracting rise and fall times when voltage MOSFETs commutate.
Measurements taken at the switching unit showed significant changes in rise and full time as the aging time was extended.
Tables 3 and 4 show the rise and fall time changes for each transistor studied, respectively.
TABLE 3 drop time Change
| Device for measuring the position of a moving object | Before aging(s) | After ageing(s) | ΔV(s) |
| #1 | 3.33e-7 | 3.28e-7 | 0.05 |
| # | |||
| 2 | 3.32e-7 | 3.24e-7 | 0.08 |
| # | |||
| 3 | 3.34e-7 | 3.21e-7 | 0.13e-7 |
Analysis of the drop time variation shows that the drop time is reduced after aging, the more important the aging time is, the more important the drop time is. The fall time decreased from 0.05e-7 after 3 hours to 0.08e-7 after 4 hours and reached 0.13e-7 after 6 hours.
TABLE 4 rise time Change
Analysis of the rise time evolution showed that the rise time decreased for the two components after aging and increased for the third component.
The above embodiments are only for illustrating the technical concept and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and implement the present invention accordingly, and not to limit the protection scope of the present invention accordingly. All equivalent changes or modifications made in accordance with the spirit of the present disclosure are intended to be covered by the scope of the present disclosure.
Claims (10)
1. An aging method of an IGBT switch of a buck converter circuit under power frequency is characterized in that: aging of IGBTs used in chopper units by increasing the collector-emitter current of the load, I being an important valueCEThe current causes an increase in the junction temperature, up to 200 ℃, beyond the maximum junction temperature value.
2. The method of claim 1 for aging a buck converter circuit IGBT switch at power frequency, wherein the method comprises the following steps: the IGBT is limited, the current value is more than or equal to 4.5A, the switching frequency is more than or equal to 50kHz, and the operation of the IGBT under high junction temperature is ensured.
3. The method of claim 2, wherein the step-down converter circuit IGBT switch aging at power frequency is characterized in that: a large current value and a large amount of kinetic energy are guided to the emitter by the collector.
4. A method of aging a buck converter circuit IGBT switch at power frequency according to claim 1 or 2, characterized by: the N + region of the IGBT is affected by ionization, and hot carrier injection occurs.
5. The method of claim 1 for aging a buck converter circuit IGBT switch at power frequency, wherein the method comprises the following steps: the IGBT is installed in a power frequency circuit, the voltage of 30V is switched by 4.5A current at the frequency of 50kHz, and the aging junction temperature is 200 ℃.
6. The method of claim 1 for aging a buck converter circuit IGBT switch at power frequency, wherein the method comprises the following steps: to measure conducted electromagnetic interference, LISN filters are inserted that allow measurements in both common and differential modes.
7. The method of claim 1, wherein the step-down converter circuit comprises an IGBT switch and a power frequency aging circuit, and the method comprises the following steps: the interference is extracted at an acceptable level of accuracy and the conducted interference is measured in the range 10kHz-50MHz when the power current is less than 50A.
8. Method for aging of a buck converter circuit IGBT switch at power frequency according to claim 6 or 7, characterized in that: after the conducted interference waveform is collected, a waveform spectrum is derived by adopting fast Fourier transform.
9. The method of claim 8, wherein the step-down converter circuit comprises an IGBT switch and a power frequency aging circuit, and the method comprises the following steps: by observing the change of peak-to-peak amplitude of the disturbances in turn-on and turn-off before and after the IGBT ages, the correlation between the aging effect of the device and the switch-on and switch-off of the switch is obtained.
10. The method of claim 9, wherein the step-down converter circuit comprises an IGBT switch aging method at power frequency, and the method comprises the following steps: by observing the evolution of the conducted electromagnetic interference before and after the aging of the IGBT, the propagation and evolution conditions of the electromagnetic interference in the aging test process are obtained.
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Application publication date: 20210326 |