CN106353665A - IGBT (insulated gate bipolar transistor) transient heat characteristic testing device and operation method thereof - Google Patents
IGBT (insulated gate bipolar transistor) transient heat characteristic testing device and operation method thereof Download PDFInfo
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- CN106353665A CN106353665A CN201610766948.7A CN201610766948A CN106353665A CN 106353665 A CN106353665 A CN 106353665A CN 201610766948 A CN201610766948 A CN 201610766948A CN 106353665 A CN106353665 A CN 106353665A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2608—Circuits therefor for testing bipolar transistors
- G01R31/2619—Circuits therefor for testing bipolar transistors for measuring thermal properties thereof
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Abstract
The invention provides an IGBT (insulated gate bipolar transistor) transient heat characteristic testing device. The IGBT transient heat characteristic testing device comprises a constant-current source 2, a first temperature collection and storage system 3, a second temperature collection and storage system 4, an electric parameter collection and storage system 5, an IGBT driving circuit 6 and a radiator 7 which are independent from one another. During testing, an IGBT testing module 1 is connected with the constant-current source 2, the first temperature collection and storage system 3, the second temperature collection and storage system 4, the electric parameter collection and storage system 5, the IGBT driving circuit 6 and the radiator 7. The IGBT transient heat characteristic testing device can collect junction temperature of an internal heating chip, shell temperature of a copper bottom plate, collector current and emitter voltage of an IGBT module in a working process simultaneously and automatically, and then a transient heat characteristic curve of the IGBT module can be extracted; the aging state of the IGBT can be evaluated by studying the transient heat characteristic curve in an aging process.
Description
Technical field
The present invention relates to power electronic devices test device and temperature detection field, more particularly, to power semiconductor
The test device of igbt (insulated gate bipolar transistor) transient thermal circuit and operation method.
Background technology
Igbt module is a kind of novel power semiconductor being composited with power mosfet and bipolar transistor,
There is input impedance is high, driving power is little, control circuit is simple, switching loss is little, switching speed is fast and operating frequency is high etc.
Advantage, becomes current power electronics market most one of power semiconductor of application prospect, has been widely used in rail
The fields such as road traffic, electric automobile, wind-power electricity generation, Industry Control and household electrical appliance.Because igbt is used for system core position,
Its failure effect is very big, in actual applications, has substantial portion of power device to lose efficacy and is caused by hot relevant issues, because
The thermal characteristicss of this research igbt have important meaning to research its reliability and biometry etc..
The thermal characteristicss of research igbt need its working junction temperature is detected, at present, the related temperature of power semiconductor
Degree detection technique has been achieved for very big development." a kind of igbt junction temperature detection device and its method " (number of patent application:
Cn201110038568) relate generally to igbt module junction temperature detection technique, specific means is by setting up igbt junction temperature and radiating
The relation of device temperature is detecting the junction temperature of igbt；" a kind of igbt temperature sensing circuit " (number of patent application:
Cn201310230871) relate generally to the detection to igbt temperature, specific means is to carry out suppression common mode using Differential input circuit
Interference to make the mensure of temperature more accurate with resistance temperature drift；" a kind of igbt temperature checking method " (number of patent application:
Cn201210230805) relate generally to the temperature computation method of igbt, specific means is by gathering thermo-sensitive resistor voltage signal
To calculate the temperature of igbt, to realize the real-time detection to igbt temperature, above patent is by simply being surveyed to test module
Examination, is directly or indirectly detected to the junction temperature of igbt or is calculated, but be all not related to the detection to igbt transient thermal circuit,
Do not study the relation of junction temperature and thermal characteristicss.
In order to realize the detection to igbt transient thermal circuit, need a kind of transient state that can accurately measure igbt module junction temperature
Thermal characteristicss test device.
Content of the invention
Present invention aims to the deficiency of current techniques, provide a kind of igbt transient thermal circuit test device and fortune
Row method.This device is connected with igbt inside modules chip to be measured using fibre optic temperature sensor, and utilizes Silica hydrogel embedding skill
Art re-starts heat insulating package to the igbt module breaking a seal, and reduces encapsulation and opens the impact to certainty of measurement, thus reach right
The purpose that module junction temperature is accurately measured；It is connected with igbt module copper soleplate to be measured using digital temperature sensor, thus
Reach the purpose that module case temperature is acquired；Realize modular electrical parameter is acquired using data collecting card and industrial computer
Purpose；Realize the measurement to transient thermal circuit by measuring knot, shell temperature and the electric parameter of igbt module simultaneously.
The technical scheme is that
A kind of igbt transient thermal circuit test device, its composition include constant-current source, the first temperature acquisition storage system, second
Temperature acquisition storage system, electric parameter acquisition and memory system, igbt drive circuit, radiator, each system is each independent；Survey
During examination igbt test module respectively with constant-current source, the first temperature acquisition storage system, second temperature acquisition and memory system, electrically join
Amount acquisition and memory system, igbt drive circuit, radiator are connected.
The first described temperature acquisition storage system, its composition include fibre optic temperature sensor, temperature signal demodulator and
First computer, its connected mode is: fibre optic temperature sensor, temperature signal demodulator and the first computer are sequentially connected；
Described second temperature acquisition and memory system, its composition includes digital temperature sensor, temperature signal collection mould
Block, temperature signal transport module and second computer, its connected mode is: digital temperature sensor, temperature signal collection mould
Block, temperature signal transport module and second computer are sequentially connected；
Described electric parameter acquisition and memory system, its composition includes DC source, voltage isolation terminal, hall sensing
Device, high-speed data acquisition card, industrial computer, its connected mode is: DC source includes the first DC source and the second DC source,
First DC source and the second DC source are connected with voltage isolation terminal and Hall element respectively；Voltage isolation terminal and
Hall element is connected with data collecting card respectively；Data collecting card is connected with industrial computer；
Described igbt drive circuit, mainly includes signal generator, optocoupler signal amplification circuit, driver, anti-interference
Circuit and DC source, its connected mode is: signal generator, optocoupler signal amplification circuit, driver, anti-jamming circuit are successively
It is connected；DC source includes the first DC source and the second DC source, the first DC source and the second DC source respectively with
Optocoupler signal amplifier is connected with driver；Driver is connected with anti-jamming circuit；
Described anti-jamming circuit, main inclusion protective resistance r1, 15v stabilivolt dz1With reverse 8v stabilivolt dz2, two poles
Pipe d1And d2, and resistance r2With resistance r3, its connected mode is 15v stabilivolt dz1With reverse 8v stabilivolt dz2With guarantor after series connection
Shield resistance r1Parallel connection, resistance r2With diode d1Positive series connection, resistance r3With diode d2Differential concatenation, by positive series circuit and
After differential concatenation circuit in parallel with protective resistance r1In parallel.
Described optocoupler amplifying circuit, main inclusion one optocoupler amplifier, resistance r4, electric capacity c, 15v stabilivolt dz3, its
Connected mode is stabilivolt dz3With resistance r4In parallel with electric capacity c after being in series, and be connected with optocoupler amplifier.
The igbt transient thermal circuit computational methods of the present invention, under constant current heating mode, the calculating of igbt transient thermal circuit
Method includes:
According to:
Calculate the transient thermal circuit curve in constant current heating process.
The operation method of the igbt dynamic thermal characteristics test device of the present invention, comprises the following steps:
First, igbt test module is produced respectively circuit, the first temperature acquisition storage system, the second temperature with test current
Degree acquisition and memory system, electric parameter acquisition and memory system, igbt drive circuit, radiator are connected；Wherein, open igbt test
Module, after putting into the Fibre Optical Sensor of the first temperature acquisition storage system, then carries out Silica hydrogel embedding to test module；Then open
Beginning following steps:
(1) system initialization, starts computer and industrial computer, the storage of waiting temperature data and electric parameter and display；
(2) test parameterss setting:
1. start constant-current source, recall the required electric current of test；
2. the signal generator in igbt drive circuit, the gate drive signal of setting igbt module, drive signal are adjusted
Igbt module can be made to be in normal open state, be prepared as driver feed drive signal；
(3) close master switch, make circuit be in closure state, check whether each instrument shows normally；
(4) the first temperature acquisition storage system and second temperature acquisition and memory system are started, respectively to test module inside
Chip temperature and copper soleplate temperature carry out storage and the display of temperature data；
(5) start electric parameter acquisition and memory system, line number is entered to the collection emitter voltage and collector current of test module
According to storage and display；
(5) start all on and off switch, so that whole test device is operated
(6) treat the equal substantially constant of temperature data of the first temperature acquisition storage system and second temperature acquisition and memory system
Afterwards, test completes, and closes each power supply, system stalls.
(7) transient thermal circuit curve, t in formula (1) are calculated according to following formulajT junction temperature data that () expression collects, tc(t) table
Show the shell temperature data collecting, vceT collection emitter voltage data that () expression collects, icT () represents the colelctor electrode electricity collecting
Flow data.
After the completion of (8) one wheel tests, system stalls, such as need to carry out next round test, then repeat step (1)～(7).
Described igbt test module method for packing, its composition includes igbt module, heat-conducting silicone grease, fin, the first temperature
Fibre optic temperature sensor in degree acquisition and memory system, the digital temperature sensor in second temperature acquisition and memory system, its
Connected mode is: igbt module, heat-conducting silicone grease and fin are sequentially connected；Fin is processed through punching, in igbt test module
Box out in the corresponding underface of inside left igbt chip, digital temperature sensor is placed in hole, opens igbt module top envelope
Dress, the Silica hydrogel within encapsulation is all dissolved, and on the side encapsulated layer punching corresponding igbt inside modules chip, makes a call to one
Individual hole is passed through on the igbt chip in left side, fibre optic temperature sensor is close on igbt inside left chip and carries out thermometric, weight
Newly utilize Silica hydrogel encapsulation technology to encapsulate igbt module, and close the encapsulation of igbt module top, heat-conducting silicone grease is evenly coated in
On igbt module copper soleplate and fin, igbt module and fin are tightly combined, heat-conducting silicone grease thickness is 100-200 μm.
The method that described igbt Silica hydrogel encapsulation technology is processed to igbt test module, comprises the following steps:
(1) open the encapsulation of igbt module top, inject epoxy resin dissolving agent, in igbt mould after Silica hydrogel all dissolves
Block punches on the nearest encapsulating material of left side inside chip, is passed directly to igbt chip, will by hole phase module inside
The fibre optic temperature sensor of the first temperature acquisition storage system is contacted with igbt chip, fixes fiber optic temperature in module-external
Sensor, then module is placed in calorstat；
(2) take a glue in rtv silica gel and b glue to be respectively placed in single beaker, stir after each removing precipitation；
(3) take a glue being stirred directly to pour in plastic cup, then pour the b glue of a colloid amount 1/10th into, use stirring rod
It is sufficiently stirred for the glue in plastic cup along a direction；
(4) glue mixing is stood 4～6 minutes；
(5) by internal for glue injection module so as to be full of whole module, and close the encapsulation of igbt top；
(6) product is placed in calorstat and carries out heat treated 2 hours at 65 DEG C, after cured that module is packaged.
The invention has the benefit that
(1) the igbt transient thermal circuit test device of the present invention, can be to igbt test module inside chip junction temperature, copper bottom
Plate shell temperature and electric parameter (including collector current and collection emitter voltage) simultaneously and automatically gather, and can be obtained by correlation computations
Go out igbt module transient thermal circuit curve, the ageing state of igbt module can be commented by analyzing transient thermal circuit curve
Estimate；
(2) the hot test device of igbt thermal transient of the present invention, can measure the wink of igbt module under different heating electric current
State characterization curves, thus probe into the impact to igbt module heating and transient thermal circuit for the electric current；
(3) the igbt transient thermal circuit test device of the present invention can be by test set emitter voltage and collector current parameter
Data collecting card change oscillograph into, and the drive signal of igbt module is changed to square-wave signal, under the different junction temperatures of collection
Collection emitter voltage and collector current switching waveform, the shadow to collection emitter voltage and collector current switching waveform for the research temperature
Ring；
(4) drive signal can be changed to square-wave signal, research switch by the igbt transient thermal circuit test device of the present invention
The situation of change of igbt module transient thermal circuit under state.
Brief description
Fig. 1 is the structural representation of the present invention；Wherein, 1- test module；2- constant-current source；3- first temperature acquisition storage system
System；4- second temperature acquisition and memory system；5- electric parameter acquisition and memory system；6-igbt drive circuit；7- radiator.
Fig. 2 is first and second temperature acquisition storage system and the electric parameter acquisition and memory system of the present invention.
Fig. 3 be the first temperature acquisition storage system 3 of the present invention, second temperature acquisition and memory system 4 and radiator 7 with
The attachment structure figure of igbt module.
Fig. 4 is the electric parameter acquisition system of the present invention
Fig. 5 is igbt drive circuit of the present invention.
Fig. 6 is the test run flow chart of the present invention.
Fig. 7 is the physical circuit connection figure of the present invention.
Fig. 8 is the transient thermal circuit curve of present invention igbt module under the constant current heating mode that test obtains.
Fig. 9 is the transient thermal circuit curve of igbt module in the measured ageing process obtaining of the present invention.
Specific embodiment (illustrates in conjunction with accompanying drawing)
Embodiment:
As shown in figure 1, the igbt transient thermal circuit test device of the present invention, composition includes constant-current source 2, the first temperature is adopted for it
Collection storage system 3, second temperature acquisition and memory system 4, electric parameter acquisition and memory system 5, igbt drive circuit 6, radiator
7, each independent；During test, igbt test module 1 is adopted with constant-current source 2, the first temperature acquisition storage system 3, second temperature respectively
Collection storage system 4, electric parameter acquisition and memory system 5, igbt drive circuit 6, fin 7 are connected.
The igbt test module 1 of the present invention adopts grand micro- igbt module of model mmg75sr120b, its stress levels
(vces) it is 1200v, current class (ic) it is 75a.
High-speed data acquisition card in the electric parameter acquisition system of the present invention grinds magnificent 818hg data acquisition using model
Card, has that 16 tunnels are single-ended or the input of 8 road differential mode analog quantity, 100khz12 position a/d converter, 16 road 100khz high-gain das cards.
As shown in Fig. 2 first temperature acquisition system 3 of the present invention, its composition includes fibre optic temperature sensor, temperature signal
Demodulator and the first computer, its connected mode is: fibre optic temperature sensor, temperature signal demodulator and the first computer are successively
It is connected, computer is shown to temperature data and stores；By special handling is carried out to igbt test module, igbt is being surveyed
Die trial block on the premise of not having any damage, fibre optic temperature sensor is close on the euthermic chip within igbt test module
Temperature signal is acquired, and temperature data is preserved and shows on computers.
Wherein, fibre optic temperature sensor adopts osp-a model, and detection temperature scope is -50 DEG C～+150 DEG C；Temperature signal
Demodulator adopts mus-p4-62sc.
In the present invention, the method that igbt test module processed using igbt Silica hydrogel encapsulation technology, specifically include
Following steps:
(1) open the encapsulation of igbt module top, inject epoxy resin dissolving agent, in igbt mould after Silica hydrogel all dissolves
Block punches on the nearest encapsulating material of left side inside chip, is passed directly to igbt chip, will by hole phase module inside
The fibre optic temperature sensor that first temperature acquisition storage system is opened is contacted with igbt chip, fixes optical fiber temperature in module-external
Degree sensor, then module is placed in calorstat；
(2) take a glue in rtv silica gel and b glue to be respectively placed in single beaker, stir after each removing precipitation；
(3) take a glue being stirred directly to pour in plastic cup, then pour the b glue of a colloid amount 1/10th into, use stirring rod
It is sufficiently stirred for the glue in plastic cup along a direction；
(4) glue mixing is stood 4～6 minutes；
(5) by internal for glue injection module so as to be full of whole module, and close the encapsulation of igbt top；
(6) product is placed in calorstat and carries out heat treated 2 hours at 65 DEG C, after cured that module is packaged.
As shown in Fig. 2 the second temperature acquisition and memory system 4 of the present invention, its composition includes second temperature sensor, temperature
Signal acquisition module, temperature signal transport module and second computer, its connected mode is: second temperature sensor, temperature letter
Number acquisition module, temperature signal transport module and second computer are sequentially connected, and computer is shown to temperature data and deposits
Storage；The system passes through digital temperature sensor to igbt test module 1 copper soleplate temperature (i.e. the shell temperature of igbt test module 1)
It is acquired, and by Radio Transmission Technology, temperature data is preserved and show on computers.
Wherein, second temperature sensor adopts digital temperature sensor ds18b20-1, and detection temperature scope is -55 DEG C
～+125 DEG C (precision ± 0.1 DEG C)；Temperature signal collection module adopts wireless data collection device sz06；Temperature signal transmits mould
Block adopts radio data-transmission equipment sz02-usb-2k.
As shown in Fig. 2 the electric parameter acquisition and memory system 5 of the present invention, its composition includes Hall element, voltage is isolated
Terminal, high-speed data acquisition card, industrial computer composition, its connected mode is: Hall element and voltage isolation terminal respectively with
Igbt test module 1 is connected, and is then sequentially connected with high-speed data acquisition card, industrial computer respectively, industrial computer is to electric parameter number
According to being shown and stored；The system passes through the Hall element and high-speed data acquisition card colelctor electrode to igbt test module 1
Electric current is acquired, and collector current data is preserved and is shown on industrial computer, the system pass through voltage isolation terminal and
High-speed data acquisition card is acquired to the collection emitter voltage of igbt test module 1, and will collect emitter voltage data and preserve and show
Show on industrial computer.
Composition in assembly of the invention can be distributed in a device cabinet.
As shown in figure 3, the first temperature acquisition storage system 3 of the present invention, second temperature acquisition and memory system 4 and radiator
7 include igbt test module 1, the optical fiber in the first temperature acquisition storage system 3 with the attachment structure figure of igbt module, its composition
Digital temperature sensor in temperature sensor, second temperature acquisition and memory system 4, heat-conducting silicone grease, radiator 7, its connection
Mode is: igbt module, heat-conducting silicone grease and radiator are sequentially connected, and radiator is processed through punching, inside igbt test module
A through hole is left in the corresponding lower section of igbt chip, and digital temperature sensor is placed in through hole, punches in igbt module side,
Fibre optic temperature sensor is put in hole and contacts with igbt chip；Using igbt Silica hydrogel encapsulation technology, the igbt of perforate is surveyed
Die trial block is processed；Heat-conducting silicone grease is equably coated in and on igbt module copper soleplate and radiator, is used for igbt module and radiating
The connection of device, heat-conducting silicone grease is used for fin is held tightly together with igbt module, and keeps good radiating, its thickness
For 100-200 μm, igbt test module and radiator are conducted heat by heat-conducting silicone grease.
Fin is processed through punching, boxes out in the corresponding underface of igbt test module inside left igbt chip, numeral
Formula temperature sensor is placed in hole, on the side encapsulated layer punching corresponding igbt inside modules chip, makes a hole and is passed through
On the igbt chip in left side, fibre optic temperature sensor is close on igbt inside left chip and carries out thermometric.
Heat-conducting silicone grease adopts SHIN-ETSU HANTOTAI g747, and thermal conductivity is 1.09w/ (m* DEG C)；Radiator 7 adopts 6063 aluminum alloy materials,
Thermal conductivity is 209w/ (m* DEG C) (25 DEG C)；Fibre optic temperature sensor adopts osp-a；Second temperature sensor adopts ds18b20-
2.
As shown in figure 4, the electric parameter acquisition and memory system of the present invention, its composition includes Hall element, voltage is isolated
Terminal, high-speed data acquisition card, industrial computer, its connected mode is: igbt module respectively with Hall element, voltage isolation terminal
It is connected, Hall element, voltage isolation terminal are connected with high-speed data acquisition card respectively, high-speed data acquisition card and industrial computer phase
Even.
The major function of this circuit realiration is the collector current to igbt and collection emitter voltage carries out Real-time Collection, its
In, Hall element adopts whb-sy15d4；Voltage isolation terminal adopts ws1521c；High-speed data acquisition card is using grinding China
818hg.
As shown in figure 5, the drive circuit of the present invention, its composition include anti-jamming circuit, driver, optocoupler amplifying circuit,
Signal generator, DC source 1 and DC source 2, its connected mode is that DC source 1 is connected with driver, output+15v
Unidirectional current, DC source 2 is connected with optocoupler amplifier, exports+24v unidirectional current, signal generator, optocoupler amplifying circuit, drive
Dynamic device, anti-jamming circuit are sequentially connected, and are connected with igbt test module.
Anti-jamming circuit includes protective resistance r of a 10k ω1, 15v stabilivolt dz1With reverse 8v stabilivolt dz2, it is even
The mode of connecing is 15v stabilivolt dz1With reverse 8v stabilivolt dz2With protective resistance r after series connection1Parallel connection, the effect of this partial circuit is
Eliminate the burr in drive signal, so that drive signal is stablized in+15v and -8v, anti-jamming circuit also includes diode d1And d2, with
And the resistance r of 10 ω2Resistance r with 20 ω3, its connected mode is resistance r2With diode d1Positive series connection, resistance
r3With diode d2Differential concatenation, by positive series circuit and differential concatenation circuit in parallel, x2.2 the and x2.1 interface with driver
Connect, the effect of this partial circuit is the concussion eliminating in drive signal, and controls the switching rate of igbt module, it is to avoid due to
The too fast voltage x current rate of change leading to of switching speed is increased sharply the impact that whole device is caused.
Optocoupler amplifying circuit includes an optocoupler amplifier, the resistance r of 100 ω4, the electric capacity c of a 0.1 μ f, one
Individual+15v stabilivolt dz3, its connected mode is stabilivolt dz3With resistance r4In parallel with electric capacity c after being in series, and amplify with optocoupler
Device is connected, and its effect is to be amplified the signal sending from signal generator, meets the requirement of actuator input signal.
The major function of this circuit testing is the control to igbt drive signal, by being adjusted to signal generator,
Obtain required signal, amplitude range is+10v and 0v, the signal input that signal generator is sent is in optocoupler amplifying circuit
It is amplified, obtaining amplitude is+15v and the signal of 0v, be+15v by the signal input driver after amplifying, obtaining amplitude
With the signal of -8v, eventually pass the process of anti-jamming circuit, eliminate loop concussion and signal burr, obtain symbol requirement
Drive signal.
Wherein, signal generator adopts fg708s；Optocoupler amplifier adopts tlp250；Driver adopts pshi2012；d1
And d2All using in4007dz1；dz1Using in5352；dz2Using in5344.
A kind of operation method of igbt transient thermal circuit test device of the present invention, comprises the following steps (as shown in Figure 6):
Igbt test module 1 with constant-current source 2, the first temperature acquisition storage system 3, second temperature collection storage is respectively
System 4, electric parameter acquisition and memory system 5, igbt drive circuit 6, radiator 7 are connected；Wherein, igbt test module 1 is entered
Row Silica hydrogel embedding, to ensure the integrity of its encapsulation, then brings into operation:
(1) system initialization, starts computer and industrial computer, the storage of waiting temperature data and electric parameter and display；
(2) test parameterss setting:
1. start constant-current source, recall the required electric current of test；
2. the signal generator in igbt drive circuit, the gate drive signal of setting igbt module, drive signal are adjusted
Igbt module can be made to be in normal open state, be prepared as driver feed drive signal；
(3) close master switch, make circuit be in closure state, check whether each instrument shows normally；
(4) the first temperature acquisition storage system and second temperature acquisition and memory system are started, respectively to test module inside
Chip temperature and copper soleplate temperature carry out storage and the display of temperature data；
(5) start electric parameter acquisition and memory system, line number is entered to the collection emitter voltage and collector current of test module
According to storage and display；
(5) start all on and off switch, so that whole test device is operated
(6) treat that the first temperature acquisition is all substantially permanent with the temperature data of storage system with storage system and second temperature collection
After fixed, test completes, and closes each power supply, system stalls.
(7) transient thermal circuit curve, t in formula (1) are calculated according to following formulajT junction temperature data that () expression collects, tc(t) table
Show the shell temperature data collecting, vceT collection emitter voltage data that () expression collects, tcT () represents the colelctor electrode electricity collecting
Flow data.
After the completion of (8) one wheel tests, system stalls, such as need to carry out next round test, then repeat step (1)～(7).
The physical circuit of the igbt test module of the present invention is given shown in Fig. 7.
As Fig. 7 constant-current source to provide constant heated current for igbt module, it is to drive that drive circuit passes through signal generator
Plate provides drive signal, by the control of signal generator is adjusted with the working condition of igbt module, electric parameter collection system
System completes the collection to collector current in igbt module routine and collection emitter voltage, and load r is the big work(of 10 ω/8000w
Rate resistance.
In order to measure the transient thermal circuit curve of igbt module, constant-current source is set to 20a and adds for igbt module by this device
Heat, and the collection to igbt module junction temperature and storage are completed by the first temperature acquisition storage system, gathered by second temperature
Storage system completes the collection and storage to shell temperature, completes collector current is penetrated with collection by electric parameter acquisition and memory system
The collection of pole tension and storage, to obtain igbt transient thermal circuit curve by calculating.
Fig. 8 be complete above-mentioned test after under the 20a heated current that obtains igbt module transient thermal circuit curve.
This device is the device that igbt transient thermal circuit is tested, by the transient thermal circuit curve obtaining, permissible
Degree of aging is detected.Igbt module is carried out with temperature cycles degradation, arranging the aging current being passed through is 50a, shell
The warm upper limit be 90 DEG C, shell temperature lower limit be 40 DEG C, often circulation 1000 times measure a transient thermal circuit curve, degradation carry out to
Stopped when igbt loses efficacy, the transient thermal circuit curve that experiment is obtained carries out, after denoising, can obtaining in degenerative process
Igbt transient thermal circuit curve.
Fig. 9 be complete above-mentioned test after in the ager process that obtains igbt transient thermal circuit curve, aging from top to bottom
Number of times is followed successively by 0 time, 1000 times, 2000 times, 3000 times, 4000 times, 5000 times, 6000 times, and corresponding degree of degeneration is followed successively by:
Do not degenerate, compared with slight degradation, slight degradation, gently degraded, more serious degeneration, serious degradation.In ager process, thermal transient is special
Linearity curve rise speed constantly accelerate, close to stable state when value constantly raise, it follows that by measure a certain module wink
Each transient thermal circuit curve in state characterization curves, with ager process is contrasted, can be to the aging shape of igbt module
State is estimated.
By being described above it can be appreciated that this device can pass through Real-time Collection igbt module junction temperature, shell temperature, current collection
Electrode current and collection emitter voltage, to obtain transient thermal circuit curve, can test mould to igbt by analyzing transient thermal circuit curve
The ageing state of block is estimated, and the research to igbt reliability and biometry provides directive function.
Unaccomplished matter of the present invention is known technology.
Claims (7)
1. a kind of igbt transient thermal circuit test device, it is characterized by its composition, including constant-current source, the first temperature acquisition storage system
System, second temperature acquisition and memory system, electric parameter acquisition and memory system, igbt drive circuit, radiator, each system is each
Independent；During test, igbt test module with constant-current source, the first temperature acquisition storage system, second temperature collection storage is respectively
System, electric parameter acquisition and memory system, igbt drive circuit, radiator are connected；
The first described temperature acquisition storage system, its composition includes fibre optic temperature sensor, temperature signal demodulator and first
Computer, its connected mode is: Fibre Optical Sensor, temperature signal demodulator and the first computer are sequentially connected；
Described second temperature acquisition and memory system, its composition includes digital temperature sensor, temperature signal collection module, temperature
Degree signal transmission module and second computer, its connected mode is: digital temperature sensor, temperature signal collection module, temperature
Degree signal transmission module and second computer are sequentially connected；
Described electric parameter acquisition and memory system, its composition includes DC source, voltage isolation terminal, Hall element, number
According to capture card, industrial computer, its connected mode is: DC source includes the first DC source and the second DC source, the first direct current
Power supply and the second DC source are connected with voltage isolation terminal and Hall element respectively；Voltage isolation terminal and hall sensing
Device is connected with data collecting card respectively；Data collecting card is connected with industrial computer；
Described igbt drive circuit, mainly includes signal generator, optocoupler signal amplification circuit, driver, anti-jamming circuit
And DC source, its connected mode is: signal generator, optocoupler signal amplification circuit, driver, anti-jamming circuit phase successively
Even；DC source includes the first DC source and the second DC source, the first DC source and the second DC source respectively with light
Coupling signal amplifier is connected with driver；Driver is connected with anti-jamming circuit.
2. igbt transient thermal circuit test device as is described in the claims, it is characterized by anti-dry in described drive circuit
Disturb circuit, main inclusion protective resistance r1, 15v stabilivolt dz1With reverse 8v stabilivolt dz2, diode d1And d2, and resistance r2
With resistance r3, its connected mode is 15v stabilivolt dz1With reverse 8v stabilivolt dz2With protective resistance r after series connection1Parallel connection, resistance r2
With diode d1Positive series connection, resistance r3With diode d2Differential concatenation, after positive series circuit and differential concatenation circuit in parallel
With with protective resistance r1In parallel.
3. igbt transient thermal circuit test device as is described in the claims, it is characterized by the optocoupler in described drive circuit
Amplifying circuit, main inclusion one optocoupler amplifier, resistance r4, electric capacity c, 15v stabilivolt dz3, its connected mode is stabilivolt
dz3With resistance r4In parallel with electric capacity c after being in series, and be connected with optocoupler amplifier.
4. if the computational methods of igbt transient thermal circuit in claim 1 are it is characterised in that under the described heating mode in constant current,
The computational methods of igbt transient thermal circuit include:
According to:
Calculate the transient thermal circuit curve in constant current heating process.
5., as the operation method of igbt transient thermal circuit test device in claim 1, its feature comprises the following steps:
By igbt test module respectively with constant-current source, the first temperature acquisition storage system, second temperature acquisition and memory system, electrically
Parameter acquisition and memory system, drive circuit, radiator are connected；Wherein, open igbt test module, put into the first temperature acquisition and deposit
After the Fibre Optical Sensor of storage system, then Silica hydrogel embedding is carried out to test module；Then following steps are started:
(1) system initialization, starts computer and industrial computer, the storage of waiting temperature data and electric parameter and display；
(2) test parameterss setting:
1. start constant-current source, recall the required electric current of test；
2. the signal generator in igbt drive circuit, the gate drive signal of setting igbt module are adjusted, drive signal can
Make igbt module be in normal open state, be prepared as driver feed drive signal；
(3) close master switch, make circuit be in closure state, check whether each instrument shows normally；
(4) the first temperature acquisition storage system and second temperature acquisition and memory system are started, respectively to test module inside chip
Temperature and copper soleplate temperature carry out storage and the display of temperature data；
(5) start electric parameter acquisition and memory system, data is carried out to the collection emitter voltage and collector current of test module
Storage and display；
(5) start all on and off switch, so that whole test device is operated
(6) after the equal substantially constant of temperature data of the first temperature acquisition storage system and second temperature acquisition and memory system, examination
Test and complete, close each power supply, system stalls.
(7) transient thermal circuit curve, t in formula (1) are calculated according to following formulajT junction temperature data that () expression collects, tcT () expression is adopted
The shell temperature data collecting, vceT collection emitter voltage data that () expression collects, icT collector current number that () expression collects
According to.
After the completion of (8) one wheel tests, system stalls, such as need to carry out next round test, then repeat step (1)～(7).
6. as the operation method of igbt transient thermal circuit test device in claim 3, the igbt test module described in its feature
Method for packing, its composition includes igbt module, heat-conducting silicone grease, fin, the fiber optic temperature in the first temperature acquisition storage system
Digital temperature sensor in sensor, second temperature acquisition and memory system, its connected mode is: igbt module, thermal conductive silicon
Fat and fin are sequentially connected；Fin is processed through punching, under igbt test module inside left igbt chip is corresponding just
Fang Liukong, digital temperature sensor is placed in hole, opens the encapsulation of igbt module top, will be all molten for the Silica hydrogel within encapsulation
Solution, on the side encapsulated layer punching corresponding igbt inside modules chip, makes a hole on the igbt chip being passed through left side, will
Fibre optic temperature sensor is close on igbt inside left chip and is carried out thermometric, re-uses Silica hydrogel encapsulation technology encapsulation igbt
Module, and close the encapsulation of igbt module top, heat-conducting silicone grease is evenly coated on igbt module copper soleplate and fin, by igbt
Module is tightly combined with fin, and heat-conducting silicone grease thickness is 100-200 μm.
7. as the operation method of igbt transient thermal circuit test device in claim 3, it is characterized by described igbt Silica hydrogel
The method that encapsulation technology is processed to igbt test module, comprises the following steps:
(1) open the encapsulation of igbt module top, inject epoxy resin dissolving agent, after Silica hydrogel all dissolves igbt module away from
Punch on the nearest encapsulating material of left side inside chip, be passed directly to igbt chip, by hole, the first temperature acquisition deposited
The fibre optic temperature sensor of storage system is contacted with igbt chip, fixes fibre optic temperature sensor in module-external, then will
Module is placed in calorstat；
(2) take a glue in rtv silica gel and b glue to be respectively placed in single beaker, stir after each removing precipitation；
(3) take a glue being stirred directly to pour in plastic cup, then pour the b glue of a colloid amount 1/10th into, with stirring rod along
One direction is sufficiently stirred for the glue in plastic cup；
(4) glue mixing is stood 4～6 minutes；
(5) by internal for glue injection module so as to be full of whole module, and close the encapsulation of igbt top；
(6) product is placed in calorstat and carries out heat treated 2 hours at 65 DEG C, after cured that module is packaged.
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|---|---|---|---|---|
| CN107085072A (en) * | 2017-04-06 | 2017-08-22 | 江阴中达软塑新材料股份有限公司 | A kind of initial heat-sealing temperature test method |
| CN109444705A (en) * | 2018-10-28 | 2019-03-08 | 北京工业大学 | A kind of power cycle experimental provision of the more junction temperature difference controls of automotive grade IGBT |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102636291A (en) * | 2011-02-15 | 2012-08-15 | 三一电气有限责任公司 | IGBT (insulated gate bipolar transistor) conjunction temperature detection device and method thereof |
| JP2014232062A (en) * | 2013-05-30 | 2014-12-11 | エスペック株式会社 | Temperature characteristic arithmetic unit for power semiconductor device |
| CN104251965A (en) * | 2014-09-24 | 2014-12-31 | 河北工业大学 | IGBT (insulated gate bipolar transistor) dynamic performance test device and operation method of IGBT dynamic performance test device |
| CN104316857A (en) * | 2014-10-31 | 2015-01-28 | 北京工业大学 | IGBT thermal fatigue test system |
| CN104458799A (en) * | 2014-11-27 | 2015-03-25 | 天津大学 | Method and device for measuring transient thermal resistance of IGBT module |
-
2016
- 2016-08-29 CN CN201610766948.7A patent/CN106353665B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102636291A (en) * | 2011-02-15 | 2012-08-15 | 三一电气有限责任公司 | IGBT (insulated gate bipolar transistor) conjunction temperature detection device and method thereof |
| JP2014232062A (en) * | 2013-05-30 | 2014-12-11 | エスペック株式会社 | Temperature characteristic arithmetic unit for power semiconductor device |
| CN104251965A (en) * | 2014-09-24 | 2014-12-31 | 河北工业大学 | IGBT (insulated gate bipolar transistor) dynamic performance test device and operation method of IGBT dynamic performance test device |
| CN104316857A (en) * | 2014-10-31 | 2015-01-28 | 北京工业大学 | IGBT thermal fatigue test system |
| CN104458799A (en) * | 2014-11-27 | 2015-03-25 | 天津大学 | Method and device for measuring transient thermal resistance of IGBT module |
Non-Patent Citations (1)
| Title |
|---|
| 张亚玲 等: "一种IGBT热阻测试方法的研究", 《河北工业大学学报》 * |
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