CN112067966B - Simulation type IGBT failure mechanism analysis system - Google Patents

Simulation type IGBT failure mechanism analysis system Download PDF

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Publication number
CN112067966B
CN112067966B CN202010990560.1A CN202010990560A CN112067966B CN 112067966 B CN112067966 B CN 112067966B CN 202010990560 A CN202010990560 A CN 202010990560A CN 112067966 B CN112067966 B CN 112067966B
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module
fixedly connected
igbt
top end
temperature
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CN112067966A (en
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马德仲
贺斌
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Harbin University of Science and Technology
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Harbin University of Science and Technology
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
    • G01R31/2628—Circuits therefor for testing field effect transistors, i.e. FET's for measuring thermal properties thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests

Abstract

The utility model provides a simulation type IGBT's failure mechanism analytic system, belongs to IGBT analysis technical field, including protecting sheathing, IGBT module, resistance module, temperature module, suggestion lantern, controlling means, power generation facility, its characterized in that: the front edge of the surface of the lower top end inside the protective shell is fixedly connected with a plurality of IGBT modules in an evenly distributed mode, the left edge of the rear part inside the IGBT modules is provided with a resistor module in an inserted mode, the left edge of the rear part inside the IGBT modules is provided with a temperature module in an inserted mode, the middle of the surface of the lower top end inside the protective shell is fixedly connected with a plurality of prompting lamps in an evenly distributed mode in a transverse row mode, the rear part of the surface of the lower top end inside the protective shell is fixedly connected with a plurality of control devices in an evenly distributed mode, the rear part of the surface of the lower top end inside the protective shell is fixedly connected with a plurality of power generation devices in an evenly distributed mode, a worker can fix an analysis system device on the IGBT without assembling and disassembling, and the worker can rapidly detect the resistance and the temperature of the IGBT at any time.

Description

Simulation type IGBT failure mechanism analysis system
The technical field is as follows:
the invention belongs to the technical field of IGBT (insulated gate bipolar translator) instruments, and particularly relates to a simulation type IGBT failure mechanism analysis system.
Background art:
in long-term working practice, during the mechanism failure process of an IGBT module analyzed by a worker, the existing analysis system device needs to be connected to the IGBT when being analyzed, and the worker needs to be connected with other power supplies to carry out power-on detection, so that the operation and the use of the worker are inconvenient, and the working efficiency is reduced.
The invention content is as follows:
the purpose of the invention is: in order to solve the staff and analyze the IGBT module mechanism inefficacy in-process, the staff can fix the analytic system device and need not the loading and unloading on the IGBT to the staff can be quick detection IGBT resistance and temperature at any time, make things convenient for the staff to operate and use and improve work efficiency, its technical scheme as follows:
the utility model provides a simulation type IGBT's failure mechanism analytic system, it includes protective housing 1, IGBT module 2, resistance module 3, temperature module 4, suggestion lantern 5, controlling means 6, power generation facility 7, its characterized in that: the front edge of the lower top end surface in the protective shell 1 is fixedly connected with a plurality of IGBT modules 2 in an evenly distributed manner, the left edge of the rear part in the IGBT module 2 is respectively inserted with a resistor module 3, the left side of the rear part in the IGBT module 2 is respectively inserted with a temperature module 4, a plurality of small prompting lamps 5 are fixedly connected in a horizontal row in the middle of the lower top end surface in the protective shell 1 in an evenly distributed manner, a plurality of control devices 6 are fixedly connected in an evenly distributed manner in the rear part of the lower top end surface in the protective shell 1, a plurality of power generation devices 7 are fixedly connected in an evenly distributed manner in the rear part of the lower top end surface in the protective shell 1, the resistor module 3 comprises a resistor processor 3-1, a display screen 3-2 and a resistor probe 3-3, and a display screen 3-2 is fixedly connected in the middle of the upper top end surface of the resistor processor 3-1, a resistance probe 3-3 is fixedly connected at the middle part in front of the resistance processor 3-1, the resistance probe 3-3 is inserted in the IGBT module 2, the temperature module 4 comprises a temperature processor 4-1, a display 4-2 and a temperature probe 4-3, the middle part of the surface of the top end of the temperature processor 4-1 is fixedly connected with a display 4-2, a temperature probe 4-3 is fixedly connected with the middle part in front of the temperature processor 4-1, the temperature probe 4-3 is inserted in the IGBT module 2, the control device 6 comprises a switch 6-1, a switch 6-2 and an indicator light 6-3, the middle of the right edge of the top surface of the electric switch 6-1 is connected with a switch 6-2, and an indicator light 6-3 is fixedly connected to the middle of the left edge and the right edge of the upper top end surface of the electric switch 6-1.
The invention has the beneficial effects that: in order to solve the problem that the worker analyzes the mechanism failure process of the IGBT module, the worker can fix the analysis system device on the IGBT without loading and unloading, and the worker can rapidly detect the resistance and the temperature of the IGBT at any time, so that the worker can operate and use the IGBT module conveniently and the working efficiency is improved.
Description of the drawings:
FIG. 1 is a schematic view of the overall structure of the present invention;
fig. 2 is a schematic structural diagram of the resistor module 3 of the present invention;
FIG. 3 is a schematic structural view of the temperature module 4 of the present invention;
fig. 4 is a schematic structural diagram of the control device 7 of the present invention.
The specific implementation mode is as follows:
the simulation-type IGBT failure mechanism analysis system described with reference to fig. 1, fig. 2, fig. 3, and fig. 4 includes a protective housing 1, an IGBT module 2, a resistor module 3, a temperature module 4, a small indicator light 5, a control device 6, and a power generation device 7, and is characterized in that: the front edge of the lower top end surface in the protective shell 1 is fixedly connected with a plurality of IGBT modules 2 in an evenly distributed manner, the left edge of the rear part in the IGBT module 2 is respectively inserted with a resistor module 3, the left side of the rear part in the IGBT module 2 is respectively inserted with a temperature module 4, a plurality of small prompting lamps 5 are fixedly connected in a horizontal row in the middle of the lower top end surface in the protective shell 1 in an evenly distributed manner, a plurality of control devices 6 are fixedly connected in an evenly distributed manner in the rear part of the lower top end surface in the protective shell 1, a plurality of power generation devices 7 are fixedly connected in an evenly distributed manner in the rear part of the lower top end surface in the protective shell 1, the resistor module 3 comprises a resistor processor 3-1, a display screen 3-2 and a resistor probe 3-3, and a display screen 3-2 is fixedly connected in the middle of the upper top end surface of the resistor processor 3-1, the IGBT module is characterized in that a resistance probe 3-3 is fixedly connected to the middle of the front of the resistance processor 3-1, the resistance probe 3-3 is inserted into the IGBT module 2, the temperature module 4 comprises a temperature processor 4-1, a display 4-2 and a temperature probe 4-3, the display 4-2 is fixedly connected to the middle of the top end surface of the temperature processor 4-1, the temperature probe 4-3 is fixedly connected to the middle of the front of the temperature processor 4-1, the temperature probe 4-3 is inserted into the IGBT module 2, the control device 6 comprises a switch 6-1, a switch 6-2 and an indicator lamp 6-3, the switch 6-2 is connected to the middle of the right edge of the top end surface of the switch 6-1, and the indicator lamp 6-3 is fixedly connected to the middle of the left and right edges of the top end surface of the switch 6-1.
When the device is used, firstly, a switch 6-2 on a control device 6 is turned on to enable current on a power generation device 7 to be injected into an IGBT module 2 through a wire, meanwhile, an indicator lamp 6-3 is turned on to indicate that the current is injected into an electric brake 6-1, if the indicator lamp 6-3 is not turned on to indicate that the electric brake 6-1 is damaged, then the current is respectively input into a resistance processor 3-1 and a temperature processor 4-1 through a resistance probe 3-3 on a resistance module 3 in the IGBT module 2 and a temperature probe 4-3 on a temperature module 4, then the current is displayed through a display screen 3-3 and a display 4-3, a worker analyzes whether the IGBT module 2 is in good condition through the resistance and the temperature value, and finally, the prompt small lamp 5 is watched to check whether the whole circuit forms a loop.
It is to be understood that the above description is not intended to limit the present invention, and the present invention is not limited to the above examples, and those skilled in the art may make various changes, modifications, additions and substitutions within the spirit and scope of the present invention.

Claims (1)

1. The utility model provides a simulation type IGBT's failure mechanism analytic system, includes protecting sheathing (1), IGBT module (2), resistance module (3), temperature module (4), suggestion lantern (5), controlling means (6), power generation facility (7), its characterized in that: the front edge of the surface of the lower top end in the protective shell (1) is evenly and fixedly connected with a plurality of IGBT modules (2), the left edge of the rear part in the IGBT module (2) is respectively inserted with a resistor module (3), the left side of the rear part in the IGBT module (2) is respectively inserted with a temperature module (4), the middle of the surface of the lower top end in the protective shell (1) is horizontally and evenly distributed and fixedly connected with a plurality of small prompting lamps (5), the rear part of the surface of the lower top end in the protective shell (1) is evenly distributed and fixedly connected with a plurality of control devices (6), and the rear part of the surface of the lower top end in the protective shell (1) is evenly distributed and fixedly connected with a plurality of power generation devices (7);
the resistance module (3) comprises a resistance processor (3-1), a display screen (3-2) and a resistance probe (3-3), the display screen (3-2) is fixedly connected to the middle of the surface of the top end of the resistance processor (3-1), the resistance probe (3-3) is fixedly connected to the middle of the front of the resistance processor (3-1), and the resistance probe (3-3) is inserted into the IGBT module (2);
the temperature module (4) comprises a temperature processor (4-1), a display (4-2) and a temperature probe (4-3), the display (4-2) is fixedly connected to the middle of the surface of the upper top end of the temperature processor (4-1), the temperature probe (4-3) is fixedly connected to the middle of the front of the temperature processor (4-1), and the temperature probe (4-3) is inserted into the IGBT module (2).
The control device (6) comprises an electric switch (6-1), a switch (6-2) and an indicator light (6-3), wherein the switch (6-2) is connected to the middle of the right edge of the upper top end surface of the electric switch (6-1), and the indicator light (6-3) is fixedly connected to the middle of the left edge and the right edge of the upper top end surface of the electric switch (6-1).
CN202010990560.1A 2020-09-19 2020-09-19 Simulation type IGBT failure mechanism analysis system Active CN112067966B (en)

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