CN106054056A - Method for acquiring IGBT failure information - Google Patents
Method for acquiring IGBT failure information Download PDFInfo
- Publication number
- CN106054056A CN106054056A CN201610444134.1A CN201610444134A CN106054056A CN 106054056 A CN106054056 A CN 106054056A CN 201610444134 A CN201610444134 A CN 201610444134A CN 106054056 A CN106054056 A CN 106054056A
- Authority
- CN
- China
- Prior art keywords
- igbt
- parameter
- drive circuit
- module
- described igbt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/27—Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects surrounding elements
Abstract
The invention is applicable in the technical field of electronics, and provides a method for acquiring IGBT (Insulated Gate Bipolar Transistor) failure information. The method comprises the following steps: acquiring at least one IGBT parameter of an IGBT module; judging whether the IGBT module has a failure sign according to the acquired IGBT parameter; and when the IGBT module has a failure sign, storing the IGBT parameter within a preset time. By adopting the method, the IGBT failure information can be acquired, and the IGBT failure reason can be positioned.
Description
Technical field
The invention belongs to electronic technology field, particularly relate to the acquisition methods of a kind of IGBT fault message.
Background technology
IGBT is widely used in large power power electronic appliance as the power semiconductor of generation excellent performance,
The field such as such as wind-force generating converter, photovoltaic DC-to-AC converter, high-low pressure converter, electric automobile, but be as IGBT device and exist
Use in these devices is more and more extensive, and the economic loss caused due to the damage of IGBT device is the most increasing, such as, send out
Equipment generates electricity electricity less, the unexpected stall of motor causes fault etc..Chip often appearance internal after general IGBT device damage is complete
Non-, it is difficult to judge failure cause from the IGBT device lost efficacy, causes to improve up from design, make IGBT device
Application enhancements is extremely difficult.
In prior art, some driver is prevented on the life failure of IGBT, and such as Chinese Patent Application No. is
201110097266.9, in patent documentation entitled " a kind of IGBT early warning method for failure ", become by the thermal resistance of detection IGBT
Change and carry out the life failure feature that early warning IGBT module causes due to fatigue.This patent only have detected about in life failure one
Divide failure phenomenon, and this feature the most seldom occurs.And for example Chinese Patent Application No. be 201210446218.0, name
It is referred to as that the patent documentation of " IGBT failure detector circuit " discloses one to be judged by a series of testing circuit
The method that IGBT lost efficacy, but simply quote the fault message of IGBT and whether damage, can not effectively record relevant IGBT
The fault message occurred, thus the IGBT lost efficacy can not be carried out failure cause analysis.
Summary of the invention
The purpose of the embodiment of the present invention is to provide the acquisition methods of a kind of IGBT fault message, it is intended to solve existing
The problem that IGBT fault message cannot obtain.
The embodiment of the present invention is achieved in that the acquisition methods of a kind of IGBT fault message, and described method includes as follows
Step:
Gather at least one IGBT parameter of IGBT module；
Judge whether described IGBT module exists inefficacy sign according to the described IGBT parameter collected；
Described IGBT parameter when there is inefficacy sign, in storage Preset Time.
Further, described Preset Time is a preset time period before and after IGBT module fault occurs.
Further, described IGBT module is IGBT drive circuit and/or IGBT device.
Further, described IGBT parameter is described IGBT drive circuit and/or the driving voltage of IGBT device, colelctor electrode
Voltage, Vce saturation voltage drop, collector current, emitter current, shell temperature.
Further, it is concrete that the IGBT parameter that described basis collects judges whether described IGBT module exists inefficacy sign
Including:
The value of the IGBT parameter collected described in Bi compare and predetermined threshold value；
Decide whether to there is inefficacy sign according to comparative result.
The method of the embodiment of the present invention, may be used for the high-power electric in the fields such as wind-power electricity generation, photovoltaic generation, converter
The diagnosis of IGBT failure of removal and analysis in electronic installation, by the anticipation losing efficacy IGBT module, and when storage was lost efficacy in time
Various parameters, failure cause is positioned, effectively reduces fault rate and the maintenance cost of power electronic equipment, there is good warp
Ji benefit.
Accompanying drawing explanation
Fig. 1 is the flow chart of the acquisition methods of the IGBT fault message that the embodiment of the present invention one provides.
Detailed description of the invention
In order to make the purpose of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, right
The present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, and
It is not used in the restriction present invention.
As it is shown in figure 1, the embodiment of the present invention proposes the acquisition methods of a kind of IGBT fault message, comprise the steps:
S1, at least one IGBT parameter of collection IGBT module；Described IGBT module is IGBT drive circuit and/or IGBT
Device.The driving voltage of IGBT, collector voltage, Vce saturation voltage drop, collector current, shell temperature can be gathered by sample circuit
One of them parameter；Or gather Vce saturation voltage drop and collector current；Or gather driving voltage and Vce saturation pressure
Fall；Or gather driving voltage, Vce saturation voltage drop and collector current.The information simultaneously these collected is by sampling
Circuit (a/d converter) changes into digital information, in no write de-lay RAM.Specifically, can be driven by gate pole G, E terminal test of IGBT
Galvanic electricity pressure, is detected and Vce saturation voltage by C, E terminal test collector voltage of IGBT, is internally integrated by IGBT module
NTC resistance detection shell temperature, use current coil through IGBT power terminal detection collector current/emitter current.
The IGBT parameter collected described in S2, basis judges whether described IGBT module exists inefficacy sign；Pass through IGBT
The processors such as DSP, ARM, FPGA in driving means are by information and predetermined threshold value such as the IGBT voltage detected, electric current, temperature
Parameter compares, it is judged that IGBT whether have inefficacy sign, described predetermined threshold value be test empirical value or Theoretical Calculation obtain
Reasonable approximation.
S3, when there is inefficacy sign, storage Preset Time in IGBT parameter.This Preset Time is IGBT module fault
A preset time period before and after generation.
If have the faults such as overvoltage, overcurrent, excess temperature, trigger IGBT driving and make corresponding troubleshooting.Generally
Occurred needing to report master control system when stream, the fault such as overheated, and blocked driving signal.After driver triggers fault, by driving
Memory element storage record IGBT module on dynamic the device voltage of a period of time (10ms before and after such as), electricity before and after fault
The IGBT parameters such as stream, temperature.This memorizer has power down and preserves function, prevents system cut-off from causing loss of data, such as, and storage
Device connects the electric supply installation such as battery or electric capacity.
The method that the embodiment of the present invention one provides is by the anticipation losing efficacy IGBT module, and each during storage inefficacy in time
Plant parameter, failure cause is positioned, effectively reduce fault rate and the maintenance cost of power electronic equipment, there is well economy effect
Benefit.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all essences in the present invention
Any amendment, equivalent and the improvement etc. made within god and principle, should be included within the scope of the present invention.
Claims (8)
1. the acquisition methods of an IGBT fault message, it is characterised in that described method comprises the steps:
Gather at least one IGBT parameter of IGBT module；
Judge whether described IGBT module exists inefficacy sign according to the described IGBT parameter collected；
Described IGBT parameter when there is inefficacy sign, in storage Preset Time.
2. the method for claim 1, it is characterised in that described Preset Time is pre-before and after IGBT module fault occurs
If the time period.
3. method as claimed in claim 1, it is characterised in that described IGBT module is IGBT drive circuit and/or IGBT device.
4. method as claimed in claim 3, it is characterised in that described IGBT parameter be described IGBT drive circuit and/or
The driving voltage of IGBT device, collector voltage, Vce saturation voltage drop, collector current, one of them parameter of shell temperature.
5. method as claimed in claim 3, it is characterised in that described IGBT parameter be described IGBT drive circuit and/or
The Vce saturation voltage drop of IGBT device and the combination of collector current.
6. method as claimed in claim 3, it is characterised in that described IGBT parameter be described IGBT drive circuit and/or
The driving voltage of IGBT device and the combination of Vce saturation voltage drop.
7. method as claimed in claim 3, it is characterised in that described IGBT parameter be described IGBT drive circuit and/or
The driving voltage of IGBT device, Vce saturation voltage drop and the combination of collector current.
8. the method as according to any one of Claims 1-4, it is characterised in that the IGBT parameter that described basis collects is sentenced
Whether disconnected described IGBT module exists inefficacy sign specifically includes:
The value of the IGBT parameter collected described in Bi compare and predetermined threshold value；
Decide whether to there is inefficacy sign according to comparative result.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610214084 | 2016-04-08 | ||
| CN2016102140848 | 2016-04-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106054056A true CN106054056A (en) | 2016-10-26 |
Family
ID=57168597
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610444134.1A Pending CN106054056A (en) | 2016-04-08 | 2016-06-20 | Method for acquiring IGBT failure information |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106054056A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108072819A (en) * | 2016-11-10 | 2018-05-25 | 西门子公司 | The abatement detecting method and device of IGBT |
| CN110161396A (en) * | 2018-02-13 | 2019-08-23 | 通用汽车环球科技运作有限责任公司 | The health evaluating based on thermal model of IGBT |
| CN112067966A (en) * | 2020-09-19 | 2020-12-11 | 哈尔滨理工大学 | Simulation type IGBT failure mechanism analysis system |
| CN112632843A (en) * | 2020-12-30 | 2021-04-09 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Electronic component fault management method and device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2416168B1 (en) * | 2010-07-26 | 2013-05-15 | Semikron | Test bench for power electronic blocks. |
| CN103427809A (en) * | 2012-05-21 | 2013-12-04 | 永济新时速电机电器有限责任公司 | Protective circuit of insulated gate bipolar transistor |
| CN104133132A (en) * | 2014-07-21 | 2014-11-05 | 中国东方电气集团有限公司 | IGBT drive fault detection and diagnosis system |
| CA2852963A1 (en) * | 2013-06-13 | 2014-12-13 | General Electric Company | Insulated gate bipolar transistor failure mode detection and protection system and method |
| CN204462763U (en) * | 2015-04-02 | 2015-07-08 | 西安捷航电子科技有限公司 | A kind of drive and protection device of high-power IGBT |
| CN105242189A (en) * | 2015-10-13 | 2016-01-13 | 中国人民解放军海军工程大学 | IGBT health state monitoring method based on saturation voltage drop of emitter collector and voidage of solder layer |
-
2016
- 2016-06-20 CN CN201610444134.1A patent/CN106054056A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2416168B1 (en) * | 2010-07-26 | 2013-05-15 | Semikron | Test bench for power electronic blocks. |
| CN103427809A (en) * | 2012-05-21 | 2013-12-04 | 永济新时速电机电器有限责任公司 | Protective circuit of insulated gate bipolar transistor |
| CA2852963A1 (en) * | 2013-06-13 | 2014-12-13 | General Electric Company | Insulated gate bipolar transistor failure mode detection and protection system and method |
| CN104133132A (en) * | 2014-07-21 | 2014-11-05 | 中国东方电气集团有限公司 | IGBT drive fault detection and diagnosis system |
| CN204462763U (en) * | 2015-04-02 | 2015-07-08 | 西安捷航电子科技有限公司 | A kind of drive and protection device of high-power IGBT |
| CN105242189A (en) * | 2015-10-13 | 2016-01-13 | 中国人民解放军海军工程大学 | IGBT health state monitoring method based on saturation voltage drop of emitter collector and voidage of solder layer |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108072819A (en) * | 2016-11-10 | 2018-05-25 | 西门子公司 | The abatement detecting method and device of IGBT |
| CN108072819B (en) * | 2016-11-10 | 2021-07-30 | 西门子公司 | IGBT failure detection method and device |
| CN110161396A (en) * | 2018-02-13 | 2019-08-23 | 通用汽车环球科技运作有限责任公司 | The health evaluating based on thermal model of IGBT |
| CN112067966A (en) * | 2020-09-19 | 2020-12-11 | 哈尔滨理工大学 | Simulation type IGBT failure mechanism analysis system |
| CN112067966B (en) * | 2020-09-19 | 2022-07-05 | 哈尔滨理工大学 | Simulation type IGBT failure mechanism analysis system |
| CN112632843A (en) * | 2020-12-30 | 2021-04-09 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Electronic component fault management method and device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Givi et al. | Switch and diode fault diagnosis in nonisolated DC–DC converters using diode voltage signature | |
| CN106054056A (en) | Method for acquiring IGBT failure information | |
| CN101344572B (en) | Chopped wave test circuit and method for semiconductor power device | |
| CN108614167B (en) | Power component fault recording and diagnosing system and method | |
| CN102545639B (en) | For regulating the circuit of direct voltage and method and electric power converter | |
| Patil et al. | Anomaly detection for IGBTs using Mahalanobis distance | |
| CN107121629B (en) | Detection device and method for judging failure of power electronic module | |
| CN102970012A (en) | On-off output module with diagnosing function | |
| CN111258303B (en) | Servo system fault detection method and device, computer equipment and storage medium | |
| CN112986784B (en) | Abnormity identification method and device for high-power welding type IGBT module | |
| CN102347753A (en) | Reset circuit and apparatus including the reset circuit | |
| CN103278692B (en) | Brake circuit of wind power generation converter detection method | |
| CN107204613B (en) | A kind of over-pressure safety device and method | |
| CN108138686A (en) | Vehicle-mounted semiconductor device | |
| CN105049010B (en) | A kind of IGBT current foldback circuit and its method | |
| Anderson et al. | Online algorithm for early stage fault detection in IGBT switches | |
| CN110927552A (en) | On-line monitoring VCE_ONFailure prediction method and device for IGBT power module of auxiliary inverter | |
| CN115828743A (en) | IGBT service life estimation method and device, electronic equipment and storage medium | |
| CN110557058A (en) | starting protection method and circuit for direct-current brushless motor | |
| CN205800813U (en) | A kind of multichannel battery temperature fault control circuit | |
| CN112829586B (en) | Method and device for monitoring fuse and electric automobile | |
| CN108896902B (en) | BMS single acquisition circuit fault diagnosis circuit, system and method | |
| CN114069568A (en) | Short-circuit protection circuit of SiC MOSFET driver | |
| CN206074145U (en) | A kind of multichannel temperature fault diagnosis circuit | |
| O'Connor et al. | Near real-time incipient fault detection in IGBT switches |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20161026 |
|
| RJ01 | Rejection of invention patent application after publication |