CN109596964A - The method and system of compatible a variety of environmental aging tests - Google Patents
The method and system of compatible a variety of environmental aging tests Download PDFInfo
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- CN109596964A CN109596964A CN201811603167.1A CN201811603167A CN109596964A CN 109596964 A CN109596964 A CN 109596964A CN 201811603167 A CN201811603167 A CN 201811603167A CN 109596964 A CN109596964 A CN 109596964A
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Abstract
The present invention relates to a kind of method and system of compatible a variety of environmental aging tests, it includes experiment environment apparatus and experimental test circuit, power device to be measured experimental enviroment needed for environmental aging test can be provided using the experiment environment apparatus, power device to be measured electrical conditions needed for environmental aging test can be provided using experimental test circuit, are tested partially so that the progress of power scale device required reverse-biased test or grid can be treated；The experimental enviroment that the experiment environment apparatus can provide includes low temperature environment, hot environment and hot and humid environment；The electrical conditions cooperation of experimental enviroment and/or experimental test the circuit load provided by experiment environment apparatus, the environmental aging test needed for power scale device carries out can be treated, the present invention can realize the test of a variety of environmental aging tests using same equipment simultaneously, the comprehensive utilization ratio of test is improved, installation space and purchase cost and subsequent O&M cost are reduced.
Description
Technical field
The present invention relates to a kind of method and system, the method for especially a kind of compatible a variety of environmental agings tests and it is
System belongs to the technical field of power device test.
Background technique
HTRB (High Temperature Reverse Bias, high temperature reverse bias test), semiconductor devices is placed in test
In the hot environment of specific temperature, and semiconductor devices is allowed to bear specific reverse biased, is existed by testing semiconductor devices
Service life and characteristic variations under the operating condition assess the reliability of measured device.
H3TRB (High Humidity High Temperature Reverse Bias, the reverse-biased test of high temperature and humidity):
Semiconductor devices is placed in the hot and humid environment of specific temperature and humidity by test, and it is specific to allow semiconductor devices to bear
Reverse biased assesses the reliability of measured device by test service life of the semiconductor devices under the operating condition and characteristic variations.
Note: having also has document that this test is referred to as THB (Temperature Humidity Bias).
Semiconductor devices is placed on by HTGB (High Temperature Gate Bias, high temperature grate are tested partially), test
In the hot environment of specific temperature, and the grid of semiconductor devices is allowed to bear specific bias, is existed by testing semiconductor devices
Service life and characteristic variations under the operating condition assess the reliability of measured device.Note: also there is document that this test is referred to as HTGS
(High Temperature Gate Stress)
HTS (High Temperature Storage, high temperature storage test), semiconductor devices is placed on specific by test
In the hot environment of temperature, measured device is assessed by test service life of the semiconductor devices under the operating condition and characteristic variations
Reliability.
LTS (Low Temperature Storage, low temperature storage test), semiconductor devices is placed on specific by test
In the low temperature environment of temperature, measured device is assessed by test service life of the semiconductor devices under the operating condition and characteristic variations
Reliability.
THS (Temperature Humidity Storage, high temperature and humidity storage test), semiconductor devices is put in test
It sets in the hot and humid environment of specific temperature and humidity, is become by testing service life and characteristic of the semiconductor devices under the operating condition
Change to assess the reliability of measured device.
The test of HTRB class and H3TRB class test main difference is that environmental condition, HTRB are that sample is placed on high temperature
Environment provides device (such as hot environment chamber or heated at constant temperature platform) inside or surface, H3TRB is then to be placed on sample
It is internal that hot and humid environment provides device (such as hot and humid environment chamber).When test, need for tested device to be placed into
Environmental test is provided inside device (or surface), and environment test device can provide hot environment or high temperature and humidity ring for measured device
Border.The placement location of other circuit parts with no restriction (can such as be located at hot environment provide the inside of device, outside, surface or
Non- surface).In addition, HTRB and H3TRB tests some non-standard tests derived, such as high pressure H3TRB test, nonstandard HTRB
Class test, nonstandard H3TRB class test etc..But the circuit of these non-standard tests is similar to code test, does not distinguish herein.It is right
HTGB test, diode-like device do not need to do HTGB test due to not having grid.When test, need tested device
It is placed into hot environment and device (such as hot environment chamber or heated at constant temperature platform) inside or surface is provided, hot environment provides
Device can provide hot environment for measured device.The placement location of other circuit parts (can such as be located at hot environment with no restriction
There is provided inside, outside, surface or the non-surface of device).In addition, HTGB tests some non-standard tests derived.But these
The circuit of non-standard test is similar to code test, and this patent does not distinguish.
HTS, LTS and HTS, which only need to be placed on measured device under certain environmental conditions, stores specific duration, does not need
Apply electrical conditions on measured device.
Current HTRB, H3The test of TRB, HTGB, HTS, LTS and HTS class is all that dedicated test macro is needed to be surveyed
Examination.That is HTRB class test needs to be tested using HTRB special test system.The test of HTGB class is needed using HTGB
Special test system is tested, and so on.
HTRB、H3The test of TRB, HTGB, HTS, LTS and HTS class is destructive testing, is commonly used in sampling Detection, is used
Frequency is not high.But since the test of six classes needs to purchase six kinds of test equipments respectively, lead to equipment entirety buying expenses and subsequent
O&M cost is higher, and the utilization rate of six equipment is all lower, and occupied space is very big.
Summary of the invention
The purpose of the present invention is overcoming the deficiencies in the prior art, a kind of compatible a variety of environmental aging tests are provided
Method and system, can realize the test of a variety of environmental agings test simultaneously using same equipment, improve the comprehensive of test
Utilization rate is closed, installation space and purchase cost and subsequent O&M cost are reduced.
According to technical solution provided by the invention, the method for compatible a variety of environmental aging tests, including proving ring
Border device and experimental test circuit can provide power device to be measured in environmental aging test using the experiment environment apparatus
Required experimental enviroment；Power device to be measured electricity item needed for environmental aging test can be provided using experimental test circuit
Part is tested partially with that can treat the progress of power scale device required reverse-biased test or grid；The examination that the experiment environment apparatus can provide
Testing environment includes low temperature environment, hot environment and hot and humid environment；
The electrical conditions cooperation of experimental enviroment and/or experimental test the circuit load provided by experiment environment apparatus, energy
The environmental aging test needed for power scale device carries out is treated, the environmental aging test that treating power scale device can be carried out includes
HTRB test, H3TRB test, HTGB test, HTS test, LTS test or THS test.
The experimental test circuit includes reversed bias voltage portion and grid bias-voltage portion, reversed bias voltage portion, grid bias-voltage portion with
After power device to be measured is correspondingly connected with, reversed bias voltage can be loaded to power device to be measured by reversed bias voltage portion, it is partially electric by grid
Splenium can load grid bias-voltage to power device to be measured；The load of power scale device is treated by reversed bias voltage portion, grid bias-voltage portion
After corresponding voltage, power scale device can be treated and carry out HTGB test, HTRB test or H3TRB test.
The reversed bias voltage portion reversed bias voltage power supply VCC, the reversed bias voltage power supply VCCNegative pole end ground connection, reversed bias voltage
Power supply VCCPositive terminal connect with one end of resistance R1, the other end of resistance R1 is connect with the first end of switch A2, switch A2's
Second end is connect with the second end of switch A1, the first end ground connection of switch A1, second end, the second end phase of switch A1 of switch A2
It can end connection corresponding with power device to be measured after connecting.
Grid bias-voltage portion includes positive grid voltage bias supply VGG+And minus gate voltage bias supply VGG-, the positive grid voltage is inclined
Set power supply VGG+Negative pole end ground connection, positive grid voltage bias supply VGG+Positive terminal connect with one end of resistance R3, resistance R3's is another
One end is connect with the first end of switch B3, and the second end of switch B3 and the second end of switch B2 and the second end of switch B1 connect
It connects, the first end ground connection of switch B2, the first end of switch B1 is connect with one end of one end of resistance R2 and switch S1, switch S1
The other end, resistance R2 the other end with minus gate voltage bias supply VGG-Negative pole end connection, minus gate voltage bias supply VGG-'s
Positive terminal ground connection；The second end of the second end of switch B1, the second end of switch B2 and switch B3 be connected with each other after can with it is to be measured
The corresponding end connection of power device.
Grid bias-voltage portion includes grid voltage bias supply VGGAnd with the grid voltage bias supply VGGThe polarity of connection is cut
Change circuit S3, grid voltage bias supply VGGOne end can be made to be grounded by polarity switching circuit, and one end of the other end and resistance R4
Connection, the other end of resistance R4 are connect with the first end of switch B4, and the second end of switch B4 is connect with the first end of switch B5, is opened
The second end ground connection of B5 is closed, resistance R4 is in parallel with switch S2, energy after second end, the first end of switch B5 of switch B4 is connected with each other
End connection corresponding with power device to be measured.
The experimental test circuit includes HTRB test circuit and HTGB test circuit, HTRB test circuit with
It is mutually indepedent that HTGB tests circuit.
Further include the leakage current measurement unit for measuring leakage current, the leakage current measurement unit with to measurement of power
Rate device adaptation connection, to measure leakage current of the power device to be measured in environmental aging test.
A kind of system of compatible a variety of environmental aging tests, including experiment environment apparatus and experimental test circuit, benefit
Power device to be measured experimental enviroment needed for environmental aging test can be provided with the experiment environment apparatus, is surveyed using test
Examination circuit can provide power device to be measured electrical conditions needed for environmental aging test, can treat the progress of power scale device
Required reverse-biased test or grid are tested partially；The experimental enviroment that the experiment environment apparatus can provide includes low temperature environment, high temperature ring
Border and hot and humid environment；
The electrical conditions cooperation of experimental enviroment and/or experimental test the circuit load provided by experiment environment apparatus, energy
The environmental aging test needed for power scale device carries out is treated, the environmental aging test that treating power scale device can be carried out includes
HTRB test, H3TRB test, HTGB test, HTS test, LTS test or THS test.
Further include the leakage current measurement unit for measuring leakage current, the leakage current measurement unit with to measurement of power
Rate device adaptation connection, to measure leakage current of the power device to be measured in environmental aging test；
The experimental test circuit includes reversed bias voltage portion and grid bias-voltage portion, reversed bias voltage portion, grid bias-voltage portion with
After power device to be measured is correspondingly connected with, reversed bias voltage can be loaded to power device to be measured by reversed bias voltage portion, it is partially electric by grid
Splenium can load grid bias-voltage to power device to be measured；The load of power scale device is treated by reversed bias voltage portion, grid bias-voltage portion
After corresponding voltage, power scale device can be treated and carry out HTGB test, HTRB test or H3TRB test.
Advantages of the present invention: experimental enviroment, the experimental test circuit provided by experiment environment apparatus provides required electricity
Condition, to be able to satisfy HTRB, H3The demand of TRB, HTGB, HTS, LTS and HTS class test, by experiment environment apparatus and examination
After test tries circuit integration, single machine multi-purpose function is realized under the premise of only increasing seldom hardware cost, improves test
The comprehensive utilization ratio of equipment reduces the purchase cost and subsequent O&M cost of user, also saves installation for user and places
The space of equipment.
For having HTRB, HTGB, HTS compatibility testing device of multiple test stations, a part of station can be configured to HTRB
Test model, a part of station can be configured to HTGB test model, and another part station can be configured to HTS test model.Similarly,
For H3TRB and THS compatibility testing device, a part of station can be configured to H3TRB test model, another part station are configurable
For THS test model.In this way, can use separate unit test equipment while carrying out multiclass test, time cost is reduced for user
With power consumption cost.
Detailed description of the invention
Fig. 1 provides the schematic diagram of hot environment using experimental enviroment case for the present invention.
Fig. 2 provides the schematic diagram of hot environment using constant temperature heating device for the present invention.
Fig. 3 is a kind of implementation diagram that experimental test circuit of the present invention connect cooperation with power device to be measured.
Fig. 4 is another schematic diagram that experimental test circuit of the present invention connect cooperation with power device to be measured.
Fig. 5 is the third implementation diagram of experimental test circuit of the present invention.
Fig. 6 is a kind of implementing circuit figure of leakage current measurement unit of the present invention.
Fig. 7 is another implementing circuit figure of leakage current measurement unit of the present invention.
Specific embodiment
Below with reference to specific drawings and examples, the invention will be further described.
In order to realize the test of a variety of environmental aging tests simultaneously using same equipment, the synthesis of test is improved
Utilization rate, reduces installation space and use cost, and the present invention includes experiment environment apparatus and experimental test circuit, using described
Experiment environment apparatus can provide power device to be measured experimental enviroment needed for environmental aging test, utilize experimental test circuit
Power device to be measured electrical conditions needed for environmental aging test can be provided, can treat needed for power scale device carries out
Reverse-biased test or grid are tested partially；The experimental enviroment that the experiment environment apparatus can provide include low temperature environment, hot environment and
Hot and humid environment；
The electrical conditions cooperation of experimental enviroment and/or experimental test the circuit load provided by experiment environment apparatus, energy
The environmental aging test needed for power scale device carries out is treated, the environmental aging test that treating power scale device can be carried out includes
HTRB test, H3TRB test, HTGB test, HTS test, LTS test or THS test.
Specifically, current environmental aging test mainly includes HTRB test, H3TRB test, HTGB are tested, HTS is tested,
LTS test or THS are tested, and the experimental enviroment needed in degradation includes hot environment (such as HTRB test, HTGB test, HTS
Test), hot and humid environment (such as H3TRB test, THS test) and low temperature environment (LTS test), when experiment environment apparatus energy
After providing hot environment, hot and humid environment and low temperature environment simultaneously, current environmental aging test can be compatible with to proving ring
The needs in border, certainly, experiment environment apparatus provide specific hot environment, hot and humid environment and low temperature environment with practical examination
It tests subject to demand, specially known to those skilled in the art, details are not described herein again.In the embodiment of the present invention, experimental enviroment dress
Setting can be using experimental enviroment case (as shown in Figure 1) or thermostat (as shown in Figure 2), and certainly, experiment environment apparatus may be used also
In the form of using other common, as long as hot environment, hot and humid environment and low temperature environment can be provided simultaneously, specifically
Type etc. no longer illustrates one by one.
As shown in the above description, HTS test, LTS test, HTS test do not need load electricity during specific test
Condition, it is only necessary to the required time is placed in specific experimental enviroment.Therefore, as long as experimental test circuit is able to satisfy
HTRB test, H3The electrical conditions load of TRB test and HTGB test.Aging for needing to load electrical conditions tries
It tests, power device to be measured is placed in experiment environment apparatus or surface, and the electricity needed for being loaded simultaneously using experimental test circuit
Corresponding test can be completed in condition, when experimental enviroment, electrical conditions difference, is able to achieve the compatibility of a variety of degradations.
In the embodiment of the present invention, what the experimental enviroment and/or experimental test circuit provided by experiment environment apparatus loaded
Electrical conditions cooperation can treat the environmental aging test needed for power scale device carries out, treat the ring that power scale device can be carried out
Border degradation includes HTRB test, H3TRB test, HTGB test, HTS test, LTS test or THS test, so as to utilize
Same equipment can realize the test of a variety of environmental aging tests simultaneously, improve the comprehensive utilization ratio of test, it is empty to reduce installation
Between and use cost.
Specifically, HTRB test and H3Two class of TRB tests applied reverse biased difference.HTRB usually requires to apply
Add the rated insulation voltage of power device 80%~100% to be measured as reverse bias voltage condition.H3TRB usually requires to apply to power scale
The rated insulation voltage of device 80%~100% is as reverse bias voltage condition, but no more than 80V；But HTRB test, H3TRB test
Identical circuit can be used.
In order to meet HTRB test, H simultaneously3Electrical conditions needed for TRB test and HTGB test load, the present invention
In embodiment, the experimental test circuit includes reversed bias voltage portion and grid bias-voltage portion, reversed bias voltage portion, grid bias-voltage portion with
After power device to be measured is correspondingly connected with, reversed bias voltage can be loaded to power device to be measured by reversed bias voltage portion, it is partially electric by grid
Splenium can load grid bias-voltage to power device to be measured；The load of power scale device is treated by reversed bias voltage portion, grid bias-voltage portion
After corresponding voltage, power scale device can be treated and carry out HTGB test, HTRB test or H3TRB test.
In the embodiment of the present invention, power device to be measured can be diode, IGBT device, MOSFET element etc., when to be measured
When power device is different type, power device to be measured is different from the end feet that reversed bias voltage portion, grid bias-voltage portion are correspondingly connected with,
When the type of power device to be measured determines, power device to be measured and reversed bias voltage portion, grid bias-voltage portion are correspondingly connected with state
Determine therewith, that is, be able to satisfy to power device to be measured and load reversed bias voltage and/or grid bias-voltage, specifically with power device to be measured
It is connected as known to those skilled in the art, details are not described herein again.
As shown in Figure 3 and Figure 4, the reversed bias voltage portion reversed bias voltage power supply VCC, the reversed bias voltage power supply VCCCathode
End ground connection, reversed bias voltage power supply VCCPositive terminal connect with one end of resistance R1, the first of the other end of resistance R1 and switch A2
End connection, the second end of switch A2 are connect with the second end of switch A1, the first end ground connection of switch A1, the second end of switch A2,
The second end of switch A1 can end feet connection corresponding with power device to be measured after being connected with each other.
In the embodiment of the present invention, VCCUsually usable high voltage power supply, concrete type etc., which can according to need, to be selected, this
Place will not enumerate explanation.Switch A1, switch A2 can be common switching device, such as relay, semiconductor switch device
Or knob etc., switch A1, switch A2, which can be, manually controls or is automatically switched state, specifically can according to need and is selected.
Resistance R1 is used for current-limiting protection.
As shown in figure 3, grid bias-voltage portion includes positive grid voltage bias supply VGG+And minus gate voltage bias supply VGG-, institute
State positive grid voltage bias supply VGG+Negative pole end ground connection, positive grid voltage bias supply VGG+Positive terminal connect with one end of resistance R3,
The other end of resistance R3 is connect with the first end of switch B3, the second end of switch B3 and the second end of switch B2 and switch B1's
Second end connection, the first end ground connection of switch B2, the first end of switch B1 and one end of resistance R2 and one end of switch S1 connect
Connect, the other end of switch S1, resistance R2 the other end with minus gate voltage bias supply VGG-Negative pole end connection, minus gate voltage biasing
Power supply VGG-Positive terminal ground connection；After the second end of the second end of switch B1, the second end of switch B2 and switch B3 is connected with each other
It can end connection corresponding with power device to be measured.
In the embodiment of the present invention, positive grid voltage bias supply VGG+, minus gate voltage bias supply VGG-Common electricity can be selected
Source form, specially known to those skilled in the art, details are not described herein again.Power device to be measured by switch B1, switch B2,
Switch B3 can be respectively at minus gate voltage bias supply VGG-, or positive grid voltage bias supply VGG+Connection, utilizes resistance R2, resistance R3 energy
Realize current-limiting protection.In Fig. 3, power device to be measured by taking IGBT device as an example, the second end of switch B1, the second end of switch B2 with
And it is connect after the second end interconnection of switch B3 with the gate terminal of IGBT device.
Due to HTRB test and H3TRB test can use identical hookup, below with HTRB test and HTGB examination
For testing, the case where HTRB is tested, HTGB is tested is completed to the experimental test circuit of Fig. 3 and is specifically described.
Table 1 is the state configuration carried out when HTRB and HTGB is tested
| Test type | A1 configuration | A2 configuration | B1 configuration | B2 configuration | B3 configuration | S1 configuration |
| Zero grid voltage HTRB test | OFF | ON | OFF | ON | OFF | It is unlimited |
| Minus gate voltage HTRB test | OFF | ON | ON | OFF | OFF | ON |
| Positive grid voltage HTGB test | ON | OFF | OFF | OFF | ON | It is unlimited |
| Minus gate voltage HTGB test | ON | OFF | ON | OFF | OFF | OFF |
When needing to be tested accordingly, by will switch A1, switch A2, switch B1, switch B2, switch B3 and open
The control that S1 carries out switch state according to the configuration of above table is closed, the configuration instruction of above table can be specifically referred to.
Switch B1, switch B2, switch B3, switch S1 are switching device, such as relay, semiconductor switch device or by (rotation) button etc..
Controls of these switches, which can be, to manually control or automatic control switch state.
Switch A1 and switch A2 are at OFF state (disjunction state), it is desirable to be able to reversed bias voltage power supply V when resistance to tested personCC
The reversed bias voltage of output, otherwise switch A1, switch A2 are possible to breakdown and cause test circuit damage.Similarly, it switchs
B1, switch B2, switch B3 are at OFF state (disjunction state), it is desirable to be able to positive grid voltage bias supply V when resistance to tested personGG+, it is negative
Grid voltage bias supply VGG-The voltage of output, otherwise switch B1, switch B2, switch B3 are possible to breakdown and cause test system
System damage.As long as the pressure resistance of switch S1 is higher than the ceiling voltage difference that the both ends resistance R2 when circuit works are likely to occur.
As shown in figure 4, grid bias-voltage portion includes grid voltage bias supply VGGAnd with the grid voltage bias supply VGGEven
The polarity switching circuit S3 connect, grid voltage bias supply VGGOne end can be made to be grounded by polarity switching circuit, and the other end and electricity
One end connection of R4 is hindered, the other end of resistance R4 connect with the first end of switch B4, and the of the second end of switch B4 and switch B5
One end connection, the second end ground connection of switch B5, resistance R4 is in parallel with switch S2, second end, the first end of switch B5 of switch B4
It can end connection corresponding with power device to be measured after interconnection.When it is implemented, polarity switching circuit S3 can choose it is double
The relay of dpdt double-pole double-throw (DPDT), certainly, when it is implemented, polarity switching circuit S3 can also specifically may be used using other circuit forms
To be selected as needed, details are not described herein again.
It is illustrated so that power device to be measured is IGBT as an example, the grid of IGBT device to be measured can pass through switch B4 polarity
Switching circuit S3 and resistance R4 or switch S2 and grid voltage bias supply VGGConnection is connected with being formed with positive minus gate voltage bias supply
The state connect.The grid of IGBT device to be measured can also be grounded by switch B5.The collector of IGBT device to be measured can pass through
Switch A1, switch A2 are formed and ground or reverse biased power supply VCCConnection.The collector E of IGBT device to be measured is grounded.Resistance R1
With reversed bias voltage power supply VCCSeries connection is used for current-limiting protection.Resistance R4 and grid voltage bias supply VGGSeries connection is used for current-limiting protection, opens
It is in parallel with resistance R4 to close S2.
Grid voltage bias supply VGGIt needs using isolated power supply (positive-negative output end is unearthed).Pass through polarity switching circuit
S3 can make the first end end of switch B4 export positive pressure or negative pressure over the ground, to realize the positively biased of IGBT device grid to be measured and bear
Partially.The simple implementation of one of polarity switching circuit is the relay using a double-pole double throw.As shown in figure 4, working as knife
When S2A, S2B are with P1 and P2 connection is thrown, grid voltage bias supply VGGCathode ground connection, grid voltage bias supply VGGAnode by electricity
Resistance R4, switch S2 are connected to switch B4, thus can realize positive grid voltage biasing.On the contrary, as knife S2A, S2B and throwing M1 and M2 connection
When, grid voltage bias supply VGGPlus earth, grid voltage bias supply VGGCathode by resistance R4, switch S2 and switch B4 company
It is logical, it thus can realize that minus gate voltage biases.
Table 2 is circuit configuration method when carrying out HTRB and the test of two class of HTGB.It can be seen that shown in Fig. 4.Shown circuit
The test of HTRB class can may be implemented by different configuration status to test with HTGB class.Compared with the circuit shown in Fig. 3, the circuit
A grid voltage bias supply V is only usedGG, the hardware cost of circuit is lower.
State configuration of the table 2 when carrying out HTRB and two class of HTGB is tested
Switch A1, switch A2, switch B4, switch B5, switch S2 are switching device, such as relay, semiconductor switching device
Part or by (rotation) button etc.；Switching device, which can be, to be manually controlled, or by automatically controlling, the mode etc. specifically automatically controlled is
Known to those skilled in the art, details are not described herein again.
Switch A1, switch A2 are at OFF state (disjunction state), it is desirable to be able to reverse biased power supply V when resistance to tested personCCIt is defeated
Reverse biased out, otherwise switch A1 and switch A2 is possible to breakdown and test macro is caused to damage.Similarly, switch B4
With switch B5 in OFF state, it is desirable to be able to the voltage that grid bias power supply exports when resistance to tested person, otherwise, switch B4, switch
B5 is possible to breakdown and test macro is caused to damage.As long as the pressure resistance of switch S2 is higher than when circuit works, the both ends resistance R4 can
The ceiling voltage difference that can occur.
As shown in figure 5, the experimental test circuit includes that HTRB test circuit and HTGB test circuit, the HTRB are surveyed
It tries circuit and HTGB test circuit is mutually indepedent.
In the embodiment of the present invention, HTRB test circuit, HTGB test circuit are arranged independently of each other, and are tested using HTRB
When circuit, HTGB test circuit are tested accordingly, is cooperated using the experimental enviroment that experiment environment apparatus provides, be able to satisfy institute
Environmental aging is needed to test.HTRB test circuit, HTGB test circuit can be set on same circuit board, when needing to carry out
When HTGB is tested, circuit directly is tested using HTGB, when needing to carry out HTRB test, directly tests circuit using HTRB.This
Outside, as shown in the above description, HTRB, which tests circuit, also can be carried out H3TRB test.
As shown in Figure 5, it includes reversed bias voltage power supply V that HTRB, which tests circuit,CC, reversed bias voltage power supply VCCNegative pole end ground connection,
Reversed bias voltage power supply VCCPositive terminal connect with the first end of switch A5 by resistance R5, the second end of switch A5 and to power scale
The corresponding end of device connects, and the case where power device to be measured is IGBT device is shown in Fig. 5, i.e., when power device to be measured is
When IGBT device, the collector of IGBT device to be measured is connect with resistance R5, the emitter ground connection of IGBT device to be measured, IGTB to be measured
The grid of device is connect with one end of one end of switch A3, switch A4, the other end ground connection of switch A3, and the other end of switch A4 is logical
Cross resistance R6 and minus gate voltage bias supply VGG1-Negative pole end connection, minus gate voltage bias supply VGG1-Positive terminal ground connection.
Circuit is tested for HTGB, by taking power device to be measured is using IGBT device as an example, the collector of IGBT device to be measured
Ground connection, the emitter ground connection of IGBT device to be measured, gate terminal and one end of switch B6, one end of switch B7 of IGBT device to be measured
The other end of connection, switch B6 passes through resistance R7 and minus gate voltage bias supply VGG2-Negative pole end connection, minus gate voltage bias supply
VGG2-Positive terminal ground connection；The other end of switch B7 passes through resistance R8 and positive grid voltage bias supply VGG+Positive terminal connection, positive grid
Press bias supply VGG+Negative pole end ground connection.
Table 3 is state configuration when carrying out HTRB and the test of two class of HTGB
Switch A3, switch A4, switch B6, switch B7 are switching device, such as relay, semiconductor switch device or press
(rotation) button etc.；The control of the switching device, which can be, to manually control, or passes through automatic control switch state.
Switch A5 is at OFF state (disjunction state), it is desirable to be able to reverse biased power supply V when resistance to tested personCCWhat is exported is anti-
To bias, otherwise switch A5 is possible to breakdown and test macro is caused to damage.Switch A3 and switch A4 (divides in OFF state
Disconnected state) when, it is desirable to be able to minus gate voltage bias supply V when resistance to tested personGG1-The voltage of output, otherwise, switch A3 and switch A4
It is possible that meeting is breakdown and causes test circuit damage.Similarly, switch B6 and switch B7 be at OFF state (disjunction state),
It is required to negative gate bias power supply V when resistance to tested personGG2-With positive grid voltage bias voltage VGG+The voltage of output.
It further, further include leakage current measurement unit for measuring leakage current, the leakage current measurement list
It is first to be adapted to connection with power device to be measured, to measure leakage current of the power device to be measured in environmental aging test.
Under normal conditions, measured power device is in HTRB, H3Leakage current when TRB is tested is higher than measured power device
Leakage current in HTGB test.For example, IGBT device is in HTRB and H3TRB test when leakage current usually 1 μ A~
In the range of 100mA, and its HTGB test when leakage current usually in the μ of 10pA~10 A.Due to the test of conventional test device
Function is single, therefore its leakage current testing unit is designed for the test macro of single kind, leakage electricity
Need to cover detection range required for single test in stream detection range.And in figs. 3 and 4, due to by HTRB and
HTGB Acquisition Circuit is fused together, and leakage current testing unit needs to share, and leakage current detection range needs can be covered
Two kinds are tested required detection range.For example, leakage current is surveyed in HTRB the and HTGB compatibility test system of IGBT device
Examination unit is required to the electric current of test 10pA~100mA range.
Fig. 6 is that one kind can be compatible with HTRB and the leakage current testing unit of two class of HTGB test realizes circuit.Specifically,
Leakage current testing unit includes that MCU unit, ADC module, signal conditioning circuit, multiplexer and multiple leakage currents are surveyed
It pings；Usually test when can test multiple power devices to be measured simultaneously, Ch1, Ch2 in figure ..., Chn represent each electric leakage
Current test channel.For the channel Chi, Rci is sampling resistor, and TDi is bi-directional voltage stabilizing diode (including TVS diode).Sampling
Resistance Rci is in parallel with zener diode TDi, and the two side ground connection, the other side is connect with power device to be measured.When test, it is tested
The leakage current I of power deviceLKiSampling resistor Rci is poured into, so that the side that sampling resistor Rci is connect with power device to be measured
Current potential increases.It acquires this current potential Vi and the size of leakage current can be calculated divided by the resistance value of sampling resistor Rci.Surely
Pressure diode TDi plays overprotection, in safe range by the embedding system of the current potential of Vi, avoids the circuit burnout of rear class.In addition,
Zener diode TDi needs reverse leakage current small as far as possible, to reduce the error for shunting and introducing to sampling resistor Rci.
For measurement, a resistance is only suitable for measuring small range of leakage current.For example, the resistance of 100 Ω is suitable
Close the leakage current of test 0.1mA~100mA range.If electric current is too big, and the pressure drop generated at resistance both ends will surpass greatly very much
The permission input voltage range of rear class test circuit is crossed.If electric current is too small, the pressure drop generated at resistance both ends will be too small
And cause rear class test circuit can not precise measurement.The leakage current testing circuit of compatible HTRB and HTGB test needs to test
Wide range of leakage current, therefore need the resistance value of sampling resistor Ri can be according to the size variation of leakage current.When it is implemented,
The method for realizing variable resistance has very much.Such as use variable resistance or variable potentiometer etc.；Multiple resistors can also be used
Part combination switching device obtains different resistance values to change the series-parallel relationship of resistor network.Two kinds of realizations are given in Fig. 6
The common scheme of variable resistance.One is by resistance R11, R12 ..., R1m respectively with switching device K11, K12 ..., K1m go here and there
It is in parallel again after connection；Different resistance values can be obtained by the switch state of control switch device.Another kind be by resistance R21,
R22 ..., R2m respectively with switching device K21, K22 ..., K2m it is in parallel after connect again.Pass through the switch state of control switch device
It can obtain different resistance values.In fact unlimited a variety of energy may be implemented by the series-parallel combination of resistance and changes entire circuit
The circuit topology of network resistance value, these concrete implementation schemes belong to the possible embodiment of the present invention, and details are not described herein.
After leakage current is converted to voltage signal, as long as collection voltages signal converses leakage current values.And it adopts
The method of collecting voltage signal also there are many kinds of, Fig. 6 gives a kind of acquisition scheme of low cost.
The voltage signal input multichannel final election device (can also be substituted with multiple switch device) in different channels, multichannel in Fig. 6
Final election device can connect the channel for needing to acquire and signal conditioning circuit.After signal conditioning circuit handles voltage signal, by
Analog voltage signal is converted into digital quantity by ADC module, and is read in the digital quantity by MCU unit (microprocessor or computer)
After leakage current is calculated.TZ1 is a zener diode (including TVS diode), it is therefore an objective to by signal conditioning circuit
The embedding system of current potential is exported within TZ1 breakdown voltage.TS1 is a Schottky diode, it is therefore an objective to will guarantee signal conditioning circuit
Output current potential be higher than -0.3V (the input terminal potential of ADC must not be lower than -0.3V).Due to the method for voltage signal acquisition have it is non-
Often a variety of, also the unlimited specific voltage acquiring method of system, all schemes that can complete the Vi voltage signal that Fig. 6 shows all belong to the application
In the protection scope of the application.
Fig. 7 is the leakage current testing unit implementation method that another kind can be compatible with HTRB and the test of two class of HTGB.Specifically
Method is poured into leakage current in one IV amplifying circuit OPA, and current signal can be converted to voltage letter by IV amplifying circuit OPA
Number V.By taking i-th of channel as an example, TMi is two-way zener diode (including TVS diode), is used for IV amplifying circuit OPAi
Input voltage it is clamped in safe range.Rbi is variable resistance, and the leakage current of wide scope is realized and changing its resistance value
Measurement.The method that Ri specifically changes resistance is similar with method shown in fig. 6, and details are not described herein.The voltage signal of rear class is adopted
Set method is also similar with method described in Fig. 6, and details are not described herein.
To sum up, in order to realize that compatible a variety of environmental agings are tested, the system of the compatible a variety of environmental agings tests of the present invention,
Experiment environment apparatus and experimental test circuit are specifically included, power device to be measured can be provided using the experiment environment apparatus and existed
Experimental enviroment needed for environmental aging test can provide power device to be measured using experimental test circuit and test in environmental aging
Needed for electrical conditions, with can treat power scale device carry out needed for reverse-biased test or grid test partially；The experimental enviroment
The experimental enviroment that device can provide includes low temperature environment, hot environment and hot and humid environment；
The electrical conditions cooperation of experimental enviroment and/or experimental test the circuit load provided by experiment environment apparatus, energy
The environmental aging test needed for power scale device carries out is treated, the environmental aging test that treating power scale device can be carried out includes
HTRB test, H3TRB test, HTGB test, HTS test, LTS test or THS test.
It further include the leakage current measurement unit for measuring leakage current, the leakage current in the embodiment of the present invention
Measuring unit is adapted to connection with power device to be measured, to measure leakage current of the power device to be measured in environmental aging test；
The experimental test circuit includes reversed bias voltage portion and grid bias-voltage portion, reversed bias voltage portion, grid bias-voltage portion with
After power device to be measured is correspondingly connected with, reversed bias voltage can be loaded to power device to be measured by reversed bias voltage portion, it is partially electric by grid
Splenium can load grid bias-voltage to power device to be measured；The load of power scale device is treated by reversed bias voltage portion, grid bias-voltage portion
After corresponding voltage, power scale device can be treated and carry out HTGB test, HTRB test or H3TRB test.
When it is implemented, specifically acted between experiment environment apparatus, experimental test circuit and leakage current measurement unit,
And mutual cooperation etc. can refer to above description, details are not described herein again.
Experimental enviroment that the present invention is provided by experiment environment apparatus, experimental test circuit provide needed for electrical conditions,
To be able to satisfy HTRB, H3The demand of TRB, HTGB, HTS, LTS and HTS class test, by experiment environment apparatus and experimental test electricity
After road is integrated, single machine multi-purpose function is realized under the premise of only increasing seldom hardware cost, improves the comprehensive of test equipment
Utilization rate is closed, the purchase cost and subsequent O&M cost of user are reduced, the sky of installation place apparatus is also saved for user
Between.
For having HTRB, HTGB, HTS compatibility testing device of multiple test stations, a part of station can be configured to HTRB
Test model, a part of station can be configured to HTGB test model, and another part station can be configured to HTS test model.Similarly,
For H3TRB and THS compatibility testing device, a part of station can be configured to H3TRB test model, another part station are configurable
For THS test model.In this way, can use separate unit test equipment while carrying out multiclass test, time cost is reduced for user
With power consumption cost.
Claims (9)
1. a kind of method of compatible a variety of environmental aging tests, characterized in that including experiment environment apparatus and experimental test
Circuit can provide power device to be measured experimental enviroment needed for environmental aging test using the experiment environment apparatus；Benefit
Power device to be measured electrical conditions needed for environmental aging test can be provided with experimental test circuit, power scale can be treated
Device carries out required reverse-biased test or grid and tests partially；The experimental enviroment that the experiment environment apparatus can provide includes low temperature ring
Border, hot environment and hot and humid environment；
The electrical conditions cooperation of experimental enviroment and/or experimental test the circuit load provided by experiment environment apparatus, can treat
Environmental aging needed for power scale device carries out is tested, and the environmental aging test that treating power scale device can be carried out includes that HTRB is tried
It tests, H3TRB test, HTGB test, HTS test, LTS test or THS test.
2. the method for compatible a variety of environmental aging tests according to claim 1, it is characterized in that: the experimental test is electric
Road includes reversed bias voltage portion and grid bias-voltage portion, after reversed bias voltage portion, grid bias-voltage portion and power device to be measured are correspondingly connected with,
Reversed bias voltage can be loaded to power device to be measured by reversed bias voltage portion, can be loaded to power device to be measured by grid bias-voltage portion
Grid bias-voltage；After treating the corresponding voltage of power scale device load by reversed bias voltage portion, grid bias-voltage portion, power scale can be treated
Device carries out HTGB test, HTRB test or H3TRB test.
3. the method for compatible a variety of environmental aging tests according to claim 2, it is characterized in that: the reversed bias voltage portion
Reversed bias voltage power supply VCC, the reversed bias voltage power supply VCCNegative pole end ground connection, reversed bias voltage power supply VCCPositive terminal and resistance R1
One end connection, the other end of resistance R1 connect with the first end of switch A2, the second end of switch A2 and the second end of switch A1
Connection, the first end ground connection of switch A1, second end, the second end of switch A1 of switch A2 can be with power device to be measured after being connected with each other
The corresponding end connection of part.
4. the method for compatible a variety of environmental aging tests according to claim 3, it is characterized in that: grid bias-voltage portion
Including positive grid voltage bias supply VGG+And minus gate voltage bias supply VGG-, the positive grid voltage bias supply VGG+Negative pole end ground connection,
Positive grid voltage bias supply VGG+Positive terminal connect with one end of resistance R3, the first end company of the other end of resistance R3 and switch B3
It connects, the second end of switch B3 is connect with the second end of the second end of switch B2 and switch B1, and the first end ground connection of switch B2 is opened
The first end for closing B1 is connect with one end of one end of resistance R2 and switch S1, the other end of the other end of switch S1, resistance R2
With minus gate voltage bias supply VGG-Negative pole end connection, minus gate voltage bias supply VGG-Positive terminal ground connection；The second of switch B1
The second end at end, the second end of switch B2 and switch B3 can end connection corresponding with power device to be measured after being connected with each other.
5. the method for compatible a variety of environmental aging tests according to claim 3, it is characterized in that: grid bias-voltage portion
Including grid voltage bias supply VGGAnd with the grid voltage bias supply VGGThe polarity switching circuit S3 of connection, grid voltage bias supply
VGGOne end can be made to be grounded by polarity switching circuit, and the other end is connect with one end of resistance R4, the other end of resistance R4 with
The first end of switch B4 connects, and the second end of switch B4 is connect with the first end of switch B5, the second end ground connection of switch B5, resistance
R4 is in parallel with switch S2, and second end, the first end of switch B5 of switch B4 can be corresponding with power device to be measured after being connected with each other
End connection.
6. the method for compatible a variety of environmental aging tests according to claim 1, it is characterized in that: the experimental test is electric
Road includes HTRB test circuit and HTGB test circuit, and the HTRB test circuit and HTGB test circuit are mutually indepedent.
7. the method for compatible a variety of environmental aging tests according to claim 1, it is characterized in that: further including for measuring
The leakage current measurement unit of leakage current, the leakage current measurement unit are adapted to connection with power device to be measured, with measurement
Leakage current of the power device to be measured in environmental aging test.
8. a kind of system of compatible a variety of environmental aging tests, it is characterized in that: including experiment environment apparatus and experimental test
Circuit can provide power device to be measured experimental enviroment needed for environmental aging test, benefit using the experiment environment apparatus
Power device to be measured electrical conditions needed for environmental aging test can be provided with experimental test circuit, power scale can be treated
Device carries out required reverse-biased test or grid and tests partially；The experimental enviroment that the experiment environment apparatus can provide includes low temperature ring
Border, hot environment and hot and humid environment；
The electrical conditions cooperation of experimental enviroment and/or experimental test the circuit load provided by experiment environment apparatus, can treat
Environmental aging needed for power scale device carries out is tested, and the environmental aging test that treating power scale device can be carried out includes that HTRB is tried
It tests, H3TRB test, HTGB test, HTS test, LTS test or THS test.
9. the system of compatible a variety of environmental aging tests according to claim 8, it is characterized in that: further including for measuring
The leakage current measurement unit of leakage current, the leakage current measurement unit are adapted to connection with power device to be measured, with measurement
Leakage current of the power device to be measured in environmental aging test；
The experimental test circuit includes reversed bias voltage portion and grid bias-voltage portion, reversed bias voltage portion, grid bias-voltage portion with it is to be measured
After power device is correspondingly connected with, reversed bias voltage can be loaded to power device to be measured by reversed bias voltage portion, pass through grid bias-voltage portion
Grid bias-voltage can be loaded to power device to be measured；It is corresponding that the load of power scale device is treated by reversed bias voltage portion, grid bias-voltage portion
Voltage after, can treat power scale device carry out HTGB test, HTRB test or H3TRB test.
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