CN111638437A - High-temperature grid bias test method and device capable of measuring threshold voltage - Google Patents

High-temperature grid bias test method and device capable of measuring threshold voltage Download PDF

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CN111638437A
CN111638437A CN202010517790.6A CN202010517790A CN111638437A CN 111638437 A CN111638437 A CN 111638437A CN 202010517790 A CN202010517790 A CN 202010517790A CN 111638437 A CN111638437 A CN 111638437A
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tested
switch
power supply
bias power
test
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CN111638437B (en
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张文亮
李文江
孙浩强
朱阳军
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Shandong Yuexin Electronic Technology Co ltd
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Shandong Yuexin Electronic Technology Co ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests

Abstract

The invention relates to a high-temperature grid bias test method and device, in particular to a high-temperature grid bias test method and device capable of measuring threshold voltage, and belongs to the technical field of high-temperature grid bias test of power semiconductor devices. According to the technical scheme provided by the invention, the high-temperature grid bias test method capable of measuring the threshold voltage comprises HTGB test equipment; HTGB test equipment is including the test connecting circuit that can with the device adaptation that awaits measuring be connected and can switch the switch switching circuit that awaits measuring the device test state, switch switching circuit and await measuring device, test connecting circuit adaptation are connected, can make test connecting circuit carry out HTGB experiment or threshold voltage measurement to the device that awaits measuring through switch switching circuit to can carry out threshold voltage measurement in the HTGB experiment to the device that awaits measuring. The invention can conveniently carry out high-temperature grid bias test and threshold voltage measurement on the power semiconductor device, improves the test efficiency, and is safe and reliable.

Description

High-temperature grid bias test method and device capable of measuring threshold voltage
Technical Field
The invention relates to a high-temperature grid bias test method and device, in particular to a high-temperature grid bias test method and device capable of measuring threshold voltage, and belongs to the technical field of high-temperature grid bias test of power semiconductor devices.
Background
The High Temperature Gate Bias test (HTGB) is an accelerated life test. In the test, a specific voltage is applied to the grid electrode of a sample to be tested (a device with a MOS grid structure, such as an IGBT, a MOSFET, a HEMT and the like), and then the sample is placed in a high-temperature environment (such as 125 ℃) with a specific temperature for a specific time (such as 1000 hours). Whether the characteristics of the sample to be tested are degraded or not is examined by applying the severe environment and the electrical stress to the device to be tested, so that the quality of the sample to be tested is judged or evaluated.
An input voltage corresponding to a midpoint of a transition region where an output voltage sharply changes with a change in an input voltage in a transfer characteristic curve is generally referred to as a threshold voltage. Different parameters are used in describing different devices. In general, the on characteristics of a voltage control transistor are realized by controlling the gate voltage thereof. The voltage between the gate and the emitter (or drain) is above the threshold voltage and the transistor is on. The voltage between the gate and the emitter (or drain) is below the threshold voltage and the transistor blocks.
Fig. 1 is a schematic circuit diagram of an IGBT device HTGB test method in IEC-60747-9 standard. The emitter E and collector C of the IGBT sample are short-circuited and grounded, and a positive voltage V is generatedGG1Or a negative voltage VGG2Is applied between the gate G and the emitter E through a gate resistor R.
For other devices such as MOSFET or HEMT having MOS structure, the circuit principle is similar to that shown in fig. 1. Except that the source S and drain D of the device are shorted and then a certain bias voltage is applied between the gate G and source S. The specific method is introduced in international or industrial standards.
Fig. 2 is a schematic circuit diagram of a threshold voltage test method of an IGBT device in IEC-60747-9 standard. A specific voltage bias V is applied between a collector C and an emitter E of the IGBT deviceCCApplying a voltage bias V between the gate G and the emitter EGG. Increasing V stepwiseGGUp to collector current I of the IGBT deviceCWhen increased to a certain value (e.g. 1mA), the voltage V between its gate G and emitter EGEI.e. the threshold voltage of the device.
In the industry, in generalAnother method is used to measure the threshold voltage as shown in fig. 3. The basic method is to short the gate G of the device to its collector C and apply a voltage V between the gate G and the emitter ECC. Increasing V stepwiseCCUp to the emitter current I of the deviceCIncrease to a specific value (e.g. 1mA) when VCCThe voltage of (d) is the threshold voltage of the device. The method has the advantages that the three-terminal device is simplified into the two-terminal device, so that the measuring circuit is greatly simplified, and the method is generally used in the industry. At present, product manuals of IGBT and MOSFET devices almost calibrate the threshold voltage according to the measurement method.
For the HTGB test, the key point of investigation is to measure the gate leakage current and the threshold voltage of the device during the test. Since the measurement of the gate leakage current has been generally integrated in the HTGB test system before, it is not described here in detail. The flow of the HTGB test is currently shown in fig. 4. Typically, static test equipment is used to measure the threshold voltage of a device under test before and after the HTGB test. In the product development stage, the HTGB test is often paused halfway through the HTGB, the sample is removed and its threshold voltage is measured using static test equipment, and then the device under test is mounted on the HTGB equipment to continue the test. Wherein, the HTGB test can carry out multiple threshold voltage measurements midway. For example, a 1000 hour HTGB test may measure the threshold voltage of a sample every 100 hours.
In summary, the following problems mainly exist when measuring the threshold voltage in the HTGB test:
1) the test is very complicated, the sample needs to be measured by two kinds of test equipment, and the sample needs to be frequently loaded and unloaded on the two kinds of test equipment.
2) The test bench occupies more manpower, has lower test efficiency and leads to longer whole test period.
3) The test data is generated by two devices, and finally the data needs to be manually integrated and analyzed, so that the workload of data analysis is large.
4) Mid-stream or off-line threshold voltage measurements need to be completed within a specified time (e.g., within 48 hours), and testing may not be completed in time when there are too many devices or insufficient static test equipment resources.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, and provides a high-temperature gate bias test method and device capable of measuring threshold voltage, which can conveniently perform high-temperature gate bias test and threshold voltage measurement on a power semiconductor device, improve test efficiency, and are safe and reliable.
According to the technical scheme provided by the invention, the high-temperature grid bias test method capable of measuring the threshold voltage comprises HTGB test equipment; HTGB test equipment is including the test connecting circuit that can with the device adaptation that awaits measuring be connected and can switch the switch switching circuit that awaits measuring the device test state, switch switching circuit and await measuring device, test connecting circuit adaptation are connected, can make test connecting circuit carry out HTGB experiment or threshold voltage measurement to the device that awaits measuring through switch switching circuit to can carry out threshold voltage measurement in the HTGB experiment to the device that awaits measuring.
The test connection circuit comprises a first bias power supply VGG and a second bias power supply VCC, and the switch switching circuit comprises a switch S1;
the negative end of the first bias power supply VGG is grounded, the positive end of the first bias power supply VGG is connected with the first end of the device to be tested through a current-limiting resistor RG, the second end of the device to be tested is connected with one end of the selection end of the switch S1, a contact A of the switch S1 is connected with the positive end of a second bias power supply VCC, the negative end of the second bias power supply VCC is grounded, a contact B of the switch S1 is connected with the third end of the device to be tested, the third end of the device to be tested is grounded through a leakage current sampling circuit, when the other end of the selection end of the switch S1 is connected with the contact A, the positive end of the second bias power supply VCC is connected with the second end of the device to be tested, and when the other end of the selection end of the switch S1 is connected with the contact B, the second end of the device to be tested;
when the device to be tested is an IGBT, a first end of the device to be tested is a grid end of the IGBT device, a second end of the device to be tested is a collector end, and a third end of the device to be tested is an emitter end; when the device to be tested is an MOS device, the first end of the device to be tested is the grid end of the MOS device, the second end of the device to be tested is the drain end of the MOS device, and the third end of the device to be tested is the source end of the MOS device.
The test connection circuit comprises a first bias power supply VGG and a second bias power supply VCC, and the switch switching circuit comprises a switch S2 and a switch S3;
the negative end of the first bias power supply VGG is grounded, the positive end of the first bias power supply VGG is connected with one end of a current-limiting resistor RG, the other end of the current-limiting resistor RG is connected with a contact A of a switch S3, a contact B of a switch S3 is connected with the second end of the device to be tested and one end of a selection end of a switch S2, the first end of the device to be tested is connected with one end of the selection end of a switch S3, the third end of the device to be tested is connected with a contact B of a switch S2, the third end of the device to be tested is grounded through a leakage current sampling circuit, a contact A of the switch S2 is connected with the positive end of a second bias power supply VCC, and the negative end of the second bias power supply VCC is;
when the device to be tested is an IGBT, a first end of the device to be tested is a grid end of the IGBT device, a second end of the device to be tested is a collector end, and a third end of the device to be tested is an emitter end; when the device to be tested is an MOS device, the first end of the device to be tested is the grid end of the MOS device, the second end of the device to be tested is the drain end of the MOS device, and the third end of the device to be tested is the source end of the MOS device.
The test connection circuit comprises a first bias power supply VGG and a leakage current sampling circuit, and the switch switching circuit comprises a switching switch S4;
the negative end of the first bias power supply VGG is grounded, the positive end of the first bias power supply VGG is connected with one end of a current-limiting resistor RG, the other end of the current-limiting resistor RG is connected with the first end of the device to be tested and a contact A of a change-over switch S4, a contact B of the change-over switch S4 is connected with the third end of the device to be tested, the second end of the device to be tested is connected with one end of a selection end of the change-over switch S4, and the third end of the device to be tested is grounded through a leakage current sampling circuit;
when the device to be tested is an IGBT, a first end of the device to be tested is a grid end of the IGBT device, a second end of the device to be tested is a collector end, and a third end of the device to be tested is an emitter end; when the device to be tested is an MOS device, the first end of the device to be tested is the grid end of the MOS device, the second end of the device to be tested is the drain end of the MOS device, and the third end of the device to be tested is the source end of the MOS device.
When a plurality of devices to be tested are tested simultaneously, the first ends of all the devices to be tested are connected with the anode of a first bias power supply VGG through a current-limiting resistor RG, and the cathode end of the first bias power supply VGG is grounded;
after the other ends of the selection ends of all the change-over switches S4 and the other end of the selection end of the change-over switch S4 are connected with the contact B, HTGB test can be carried out on all the devices to be tested through the test connection circuit;
when the threshold voltage of any device to be tested is measured, the other end of the selection end of the selector switch S4 connected with the selected device to be tested is connected with the contact A, the voltage of the first bias power supply VFF is controlled until the current measured by the leakage current sampling circuit obtains the required value of the threshold voltage measurement condition, and the voltage value between the first end of the device to be tested and the third end of the device to be tested is the threshold voltage of the device to be tested.
A high-temperature grid bias test device capable of measuring threshold voltage comprises HTGB test equipment; HTGB test equipment is including the test connecting circuit that can with the device adaptation that awaits measuring be connected and can switch the switch switching circuit that awaits measuring the device test state, switch switching circuit and await measuring device, test connecting circuit adaptation are connected, can make test connecting circuit carry out HTGB experiment or threshold voltage measurement to the device that awaits measuring through switch switching circuit to can carry out threshold voltage measurement in the HTGB experiment to the device that awaits measuring.
The test connection circuit comprises a first bias power supply VGG and a second bias power supply VCC, and the switch switching circuit comprises a switch S1;
the negative end of the first bias power supply VGG is grounded, the positive end of the first bias power supply VGG is connected with the first end of the device to be tested through a current-limiting resistor RG, the second end of the device to be tested is connected with one end of the selection end of the switch S1, a contact A of the switch S1 is connected with the positive end of a second bias power supply VCC, the negative end of the second bias power supply VCC is grounded, a contact B of the switch S1 is connected with the third end of the device to be tested, the third end of the device to be tested is grounded through a leakage current sampling circuit, when the other end of the selection end of the switch S1 is connected with the contact A, the positive end of the second bias power supply VCC is connected with the second end of the device to be tested, and when the other end of the selection end of the switch S1 is connected with the contact B, the second end of the device to be tested;
when the device to be tested is an IGBT, a first end of the device to be tested is a grid end of the IGBT device, a second end of the device to be tested is a collector end, and a third end of the device to be tested is an emitter end; when the device to be tested is an MOS device, the first end of the device to be tested is the grid end of the MOS device, the second end of the device to be tested is the drain end of the MOS device, and the third end of the device to be tested is the source end of the MOS device.
The test connection circuit comprises a first bias power supply VGG and a second bias power supply VCC, and the switch switching circuit comprises a switch S2 and a switch S3;
the negative end of the first bias power supply VGG is grounded, the positive end of the first bias power supply VGG is connected with one end of a current-limiting resistor RG, the other end of the current-limiting resistor RG is connected with a contact A of a switch S3, a contact B of a switch S3 is connected with the second end of the device to be tested and one end of a selection end of a switch S2, the first end of the device to be tested is connected with one end of the selection end of a switch S3, the third end of the device to be tested is connected with a contact B of a switch S2, the third end of the device to be tested is grounded through a leakage current sampling circuit, a contact A of the switch S2 is connected with the positive end of a second bias power supply VCC, and the negative end of the second bias power supply VCC is;
when the device to be tested is an IGBT, a first end of the device to be tested is a grid end of the IGBT device, a second end of the device to be tested is a collector end, and a third end of the device to be tested is an emitter end; when the device to be tested is an MOS device, the first end of the device to be tested is the grid end of the MOS device, the second end of the device to be tested is the drain end of the MOS device, and the third end of the device to be tested is the source end of the MOS device.
The test connection circuit comprises a first bias power supply VGG and a leakage current sampling circuit, and the switch switching circuit comprises a switching switch S4;
the negative end of the first bias power supply VGG is grounded, the positive end of the first bias power supply VGG is connected with one end of a current-limiting resistor RG, the other end of the current-limiting resistor RG is connected with the first end of the device to be tested and a contact A of a change-over switch S4, a contact B of the change-over switch S4 is connected with the third end of the device to be tested, the second end of the device to be tested is connected with one end of a selection end of the change-over switch S4, and the third end of the device to be tested is grounded through a leakage current sampling circuit;
when the device to be tested is an IGBT, a first end of the device to be tested is a grid end of the IGBT device, a second end of the device to be tested is a collector end, and a third end of the device to be tested is an emitter end; when the device to be tested is an MOS device, the first end of the device to be tested is the grid end of the MOS device, the second end of the device to be tested is the drain end of the MOS device, and the third end of the device to be tested is the source end of the MOS device.
When a plurality of devices to be tested are tested simultaneously, the first ends of all the devices to be tested are connected with the anode of a first bias power supply VGG through a current-limiting resistor RG, and the cathode end of the first bias power supply VGG is grounded;
after the other ends of the selection ends of all the change-over switches S4 and the other end of the selection end of the change-over switch S4 are connected with the contact B, HTGB test can be carried out on all the devices to be tested through the test connection circuit;
when the threshold voltage of any device to be tested is measured, the other end of the selection end of the selector switch S4 connected with the selected device to be tested is connected with the contact A, the voltage of the first bias power supply VFF is controlled until the current measured by the leakage current sampling circuit obtains the required value of the threshold voltage measurement condition, and the voltage value between the first end of the device to be tested and the third end of the device to be tested is the threshold voltage of the device to be tested.
The invention has the advantages that: the test connection circuit is connected with the device to be tested, and the test connection circuit can carry out HTGB test or threshold voltage measurement on the device to be tested through the switch switching circuit so as to carry out threshold voltage measurement in the HTGB test on the device to be tested; the test process is greatly simplified, only one test device is needed for HTGB test and threshold voltage measurement of the device to be tested, and the sample is not required to be frequently loaded and unloaded. Manpower is liberated, and the test can be automatically carried out after the test is started. The test efficiency is greatly improved, the threshold voltage can be completed in seconds or even shorter time, and the whole test period is shortened. All data are generated by one device, the program of the testing device can automatically integrate the threshold voltage and the data of the HTGB test, and the data analysis workload is greatly reduced.
Drawings
Fig. 1 is a schematic circuit diagram of a conventional HTGB test.
Fig. 2 is a schematic circuit diagram of a conventional threshold voltage measurement.
Fig. 3 is a schematic circuit diagram of another prior art threshold voltage measurement.
Fig. 4 is a flowchart of a conventional HTGB test and threshold voltage measurement.
FIG. 5 is a flow chart of the HTGB test and the threshold voltage measurement performed by the present invention.
FIG. 6 is a circuit schematic of the test connection circuit of the present invention for threshold voltage measurement.
FIG. 7 is a schematic circuit diagram of the HTGB test performed by the test connection circuit of FIG. 6.
FIG. 8 is a circuit schematic of another test connection circuit of the present invention for threshold voltage measurement.
Fig. 9 is a schematic circuit diagram of the HTGB test performed by the test connection circuit of fig. 8.
FIG. 10 is a circuit diagram of a third test connection circuit for threshold voltage measurement according to the present invention.
FIG. 11 is a schematic circuit diagram of the HTGB test performed by the test connection circuit of FIG. 10.
Fig. 12 is a schematic diagram illustrating a conventional method for testing a plurality of devices under test.
FIG. 13 is a schematic diagram of a circuit for testing a plurality of devices under test according to the present invention.
Detailed Description
The invention is further illustrated by the following specific figures and examples.
As shown in fig. 5, in order to conveniently perform a high-temperature gate bias test and a threshold voltage measurement on a power semiconductor device and improve the test efficiency, the high-temperature gate bias test method capable of measuring the threshold voltage of the invention includes an HTGB test device; HTGB test equipment is including the test connecting circuit that can with the device adaptation that awaits measuring be connected and can switch the switch switching circuit that awaits measuring the device test state, switch switching circuit and await measuring device, test connecting circuit adaptation are connected, can make test connecting circuit carry out HTGB experiment or threshold voltage measurement to the device that awaits measuring through switch switching circuit to can carry out threshold voltage measurement in the HTGB experiment to the device that awaits measuring.
Specifically, the device to be tested can be an existing commonly-used semiconductor device, such as an IGBT device or a MOSFET device, and can be specifically selected as required, after the device to be tested is connected with the test connection circuit, the HTGB test or the threshold voltage measurement of the device to be tested can be realized through the test connection circuit, and the switching of the test connection circuit to the HTGB test or the threshold voltage measurement of the device to be tested can be realized through the switch switching circuit, so that the threshold voltage measurement can be performed in the HTGB test of the device to be tested, compared with the prior art, the device to be tested does not need to be frequently connected and matched with different test circuits, and the test efficiency can be greatly improved.
As shown in fig. 6 and 7, the test connection circuit includes a first bias power supply VGG and a second bias power supply VCC, and the switch switching circuit includes a switch S1;
the negative end of the first bias power supply VGG is grounded, the positive end of the first bias power supply VGG is connected with the first end of the device to be tested through a current-limiting resistor RG, the second end of the device to be tested is connected with one end of the selection end of the switch S1, a contact A of the switch S1 is connected with the positive end of a second bias power supply VCC, the negative end of the second bias power supply VCC is grounded, a contact B of the switch S1 is connected with the third end of the device to be tested, the third end of the device to be tested is grounded through a leakage current sampling circuit, when the other end of the selection end of the switch S1 is connected with the contact A, the positive end of the second bias power supply VCC is connected with the second end of the device to be tested, and when the other end of the selection end of the switch S1 is connected with the contact B, the second end of the device to be tested;
when the device to be tested is an IGBT, a first end of the device to be tested is a grid end of the IGBT device, a second end of the device to be tested is a collector end, and a third end of the device to be tested is an emitter end; when the device to be tested is an MOS device, the first end of the device to be tested is the grid end of the MOS device, the second end of the device to be tested is the drain end of the MOS device, and the third end of the device to be tested is the source end of the MOS device.
In the embodiment of the present invention, the switch S1 may be implemented by a double-pole double-throw relay, and certainly, the switch S1 may also be implemented in other forms, such as two single-pole single-throw relays, and the specific implementation may be selected according to the needs, which is not described herein again. The first bias power supply VGG can have the output capability of both positive voltage and negative voltage, for example, the voltage range output by the first bias power supply VGG is-100V to 100V, that is, the first bias power supply VGG is used to realize the functions of the two power supplies mentioned in the background art.
When the threshold voltage measurement is required, the other end of the selection terminal of the switch S1 is connected to the contact a of the switch S1, as shown in fig. 6. According to specific test conditions, the second bias power supply VCC is enabled to output required voltage, the voltage of the second bias power supply VGG is gradually increased until the current IC flowing through the third end of the device to be tested is increased to a target value (the target value is defined by a user according to a tested sample, and the value is different for different products). The threshold voltage can be obtained in two ways: firstly, measuring the voltage between the first end of the device to be measured and the third end of the device to be measured by using a measuring circuit; the second is that the voltage value of the first bias power supply VGG (for example, the output voltage value of the first bias power supply VGG is read through a communication mode) is subtracted by the divided voltage VS of the leakage current sampling circuit (the functional relationship between the divided voltage of the leakage current sampling circuit and the current IC flowing through the third terminal of the device to be tested is known), so as to obtain the voltage value (if there is no leakage current sampling circuit in the circuit, the threshold voltage is the output voltage of the first bias power supply VGG).
When the HTGB test is required, the other end of the selection terminal of the switch S1 is connected to the contact B of the switch S1, as shown in fig. 7. According to the specific test condition of the device to be tested, the first bias power VGG is only required to output the required voltage, and the specific process of performing the HTGB test on the device to be tested is the same as that in the prior art, which is known to those skilled in the art, and is not described herein again.
As shown in fig. 8 and 9, the test connection circuit includes a first bias power supply VGG and a second bias power supply VCC, and the switch switching circuit includes a switch S2 and a switch S3;
the negative end of the first bias power supply VGG is grounded, the positive end of the first bias power supply VGG is connected with one end of a current-limiting resistor RG, the other end of the current-limiting resistor RG is connected with a contact A of a switch S3, a contact B of a switch S3 is connected with the second end of the device to be tested and one end of a selection end of a switch S2, the first end of the device to be tested is connected with one end of the selection end of a switch S3, the third end of the device to be tested is connected with a contact B of a switch S2, the third end of the device to be tested is grounded through a leakage current sampling circuit, a contact A of the switch S2 is connected with the positive end of a second bias power supply VCC, and the negative end of the second bias power supply VCC is;
when the device to be tested is an IGBT, a first end of the device to be tested is a grid end of the IGBT device, a second end of the device to be tested is a collector end, and a third end of the device to be tested is an emitter end; when the device to be tested is an MOS device, the first end of the device to be tested is the grid end of the MOS device, the second end of the device to be tested is the drain end of the MOS device, and the third end of the device to be tested is the source end of the MOS device.
In the embodiment of the present invention, the switch S2 and the switch S3 may also be implemented by selecting a double-pole double-throw relay, and specific reference may be made to the description of the switch S1, which is not described herein again.
When the threshold voltage measurement is required, the other end of the selection terminal of the switch S2 is connected to the contact a of the switch S2, and the other end of the selection terminal of the switch S3 is connected to the contact B of the switch S3, as shown in fig. 8. According to specific test conditions, the second bias power supply VCC is enabled to output a target current IC (the second bias power supply VCC has both voltage output capability and current output capability, and in specific implementation, two ways can be adopted, one way is to gradually increase the voltage output by the second bias power supply VCC, and simultaneously detect the current by using a leakage current sampling circuit, and the output voltage corresponding to the second bias power supply VCC when the target current is reached is the threshold voltage, the other way is to directly enable the second bias power supply VCC to output the required current IC, and then measure the voltage to be the threshold voltage, practically most of the current power supplies have both constant voltage and constant current output functions, the specific implementation forms of constant voltage and constant current output are well known by those skilled in the art, and no further description is given here), at this time, the current flowing through the third terminal of the device to be tested is the output current of the second bias power supply VCC, and the voltage between the first end of the device to be tested and the third end of the device to be tested is the threshold voltage. The threshold voltage can be obtained in two ways: firstly, measuring the voltage between the first end of a device to be measured and the third end of the device to be measured by using a measuring circuit; the second is that the voltage value of the second bias power VCC (for example, the output voltage value of the second bias power VCC is read through a communication mode) is subtracted by the leakage current sampling circuit voltage division VS (the functional relationship between the leakage current sampling circuit voltage division and the current flowing through the third terminal of the device to be tested is known) (if there is no leakage current sampling circuit in the circuit, the threshold voltage is the second bias power VCC).
When the HTGB test is required, the other end of the selection terminal of the switch S2 is connected to the contact B of the switch S2, and the other end of the selection terminal of the switch S2 is connected to the contact a of the switch S3, as shown in fig. 9. According to a specific test condition (the test condition is an HTGB test condition, that is, a required positive voltage or negative voltage), the first bias power VGG is made to output a required voltage, and a process of specifically performing an HTGB test on a device to be tested is well known to those skilled in the art, and is not described herein again.
As shown in fig. 10 and 11, the test connection circuit includes a first bias power supply VGG and a leakage current sampling circuit, and the switch switching circuit includes a switching switch S4;
the negative end of the first bias power supply VGG is grounded, the positive end of the first bias power supply VGG is connected with one end of a current-limiting resistor RG, the other end of the current-limiting resistor RG is connected with the first end of the device to be tested and a contact A of a change-over switch S4, a contact B of the change-over switch S4 is connected with the third end of the device to be tested, the second end of the device to be tested is connected with one end of a selection end of the change-over switch S4, and the third end of the device to be tested is grounded through a leakage current sampling circuit;
when the device to be tested is an IGBT, a first end of the device to be tested is a grid end of the IGBT device, a second end of the device to be tested is a collector end, and a third end of the device to be tested is an emitter end; when the device to be tested is an MOS device, the first end of the device to be tested is the grid end of the MOS device, the second end of the device to be tested is the drain end of the MOS device, and the third end of the device to be tested is the source end of the MOS device.
In the embodiment of the present invention, the switch S4 may be implemented by a double-pole double-throw relay, and the condition of the switch S4 may specifically refer to the description of the switch S1, which is not described herein again.
When the threshold voltage test is required, the other end of the selection terminal of the switch S4 is connected to the contact a of the switch S4, as shown in fig. 10. According to specific test conditions, the first bias power supply VGG is made to output a target current IC (the target value is defined by a user according to a tested sample, and the value is different for different products, the larger the current is, the larger the value is), at this time, the current flowing through the third end of the device to be tested is the output current of the first bias power supply VGG, and the voltage between the first end of the device to be tested and the third end of the device to be tested is the threshold voltage. The threshold voltage can be obtained in two ways: firstly, measuring the voltage of a first end of a device to be measured and the voltage of a third end of the device to be measured by using a measuring circuit; the second is that the voltage value of the first bias power VGG (for example, the output voltage value of the first bias power VCC is read through a communication mode) is subtracted by the leakage current sampling circuit divided voltage VS (the functional relationship between the leakage current sampling circuit divided voltage and the current flowing through the third terminal of the device to be tested is known) (if there is no leakage current sampling circuit in the circuit, the threshold voltage is the second bias power VCC).
When the HTGB test is required, the other end of the selection terminal of the switch S4 is connected to the contact B of the switch S4, as shown in fig. 11. According to specific test conditions, the first bias power VGG is only required to output a required voltage, and a process of specifically performing an HTGB test on a device to be tested is well known to those skilled in the art and is not described herein again.
As shown in fig. 13, when a plurality of devices to be tested are tested simultaneously, the first ends of all the devices to be tested are connected to the positive electrode of the first bias power supply VGG through the current-limiting resistor RG, and the negative electrode end of the first bias power supply VGG is grounded;
after the other ends of the selection ends of all the change-over switches S4 and the other end of the selection end of the change-over switch S4 are connected with the contact B, HTGB test can be carried out on all the devices to be tested through the test connection circuit;
when the threshold voltage of any device to be tested is measured, the other end of the selection end of the selector switch S4 connected with the selected device to be tested is connected with the contact A, the voltage of the first bias power supply VFF is controlled until the current measured by the leakage current sampling circuit obtains the required value of the threshold voltage measurement condition, and the voltage value between the first end of the device to be tested and the third end of the device to be tested is the threshold voltage of the device to be tested.
As shown in fig. 12, which is a schematic diagram of a conventional circuit for simultaneously performing an HTGB test on a plurality of devices under test, each device under test forms a test channel, all the test channels share a first bias power VGG, and the first bias power VGG is always applied to a sample under test.
In an actual test, a single HTGB test needs to test a plurality of samples to be tested at the same time, as shown in fig. 13, which is a schematic circuit diagram for testing a plurality of samples to be tested according to the present invention, and of course, the test connection circuit for the device to be tested in each channel may also adopt the conditions shown in fig. 6, fig. 7, fig. 8, and fig. 9, and may be specifically selected as needed, and details thereof are not described here. For convenience, in fig. 13, when there are multiple test channels, the switches of the test channels are respectively K11, K12, … …, and K1n, and the connection and matching between the switches and the device under test are consistent with the matching manner of the switch S4, which is not described herein again. When the HTGB test state is required to work, the other end of the corresponding selection end of all the change-over switches (K11, K12, … K1n) is communicated with the corresponding contact B.
When the threshold voltage measurement needs to be carried out on any device to be tested, the following method can be adopted:
the first threshold voltage measuring method comprises the following steps: when the threshold voltage of the device to be measured of the ith channel needs to be measured, the other end of the selection end of the selector switch K1i of the channel is communicated with the contact A (the other end of the selection end of the selector switch of the other channel is connected with the corresponding contact B). The voltage of the first bias power supply VGG is gradually changed (for example, gradually increased from 0V) until the current measured by the leakage current sampling circuit of the channel reaches the required value of the measurement condition, and at this time, the voltage value between the first end of the device under test and the third end of the device under test is the threshold voltage. And sequentially measuring the threshold voltage of the device to be measured on each channel to obtain the corresponding threshold voltage of the device to be measured on all channels.
And a second threshold voltage measuring method: usually, the gate leakage current of the IGBT/MOSFET is very small (<1 μ a), and the current IC flowing through the third terminal of the device under test is usually of mA magnitude when measuring the threshold voltage. In this case, the first bias power supply VGG can be made to output the current required for threshold measurement at a constant current. One channel is operated in the threshold measurement mode, and the other channels are operated in the HTGB mode, so that the current of the device under test operating on the channel in the threshold measurement mode can be approximated to the output current of the first bias power supply VGG. At this time, the voltage between the first terminal of the device under test operating on the channel in the threshold measurement mode and the third terminal of the device under test is the threshold voltage.
In the first method, the voltage of the first bias power supply VGG needs to be changed continuously, and the current IC flowing through the third terminal of the device to be tested is detected at the same time until the current IC flowing through the third terminal of the device to be tested reaches the test condition. The method has a slow test process, but only needs the first bias power supply VGG to have a constant voltage output function. In the second method, only the first bias power supply VGG is required to output a specific current, but the first bias power supply VGG is required to have the functions of constant voltage and constant current output at the same time.
During the multi-channel HTGB test, the same first bias power source VGG can be shared. However, the first bias supply VGG can only be time multiplexed for threshold measurement. It is necessary to control the operation of the mode switching switches (K11, K12, … K1 n). The specific control method is (taking the threshold voltage measurement method two as an example):
step 0: the other end of the selection end of the selector switch of all the channels is connected with a contact A of the selector switch, and the first bias power supply VGG outputs the voltage bias required by the HTGB test, so that the system is in the HTGB test mode.
Step 1: and switching the power output of the first bias power supply VGG to the current (such as the constant current output of 1mA) required by the threshold voltage test.
Step 2: the other end of the selection end of the switch K1i of the channel to be tested is only communicated with the contact A of the switch K1i for a period of time (usually only 0.1-10 ms). In the period of time, the voltage E between the first end of the device to be tested on the tested channel and the third end of the device to be tested needs to be measured, and the output voltage of the first bias power supply VGG can be read back.
When the ith channel finishes the threshold voltage measurement, the next channel (for example, the (i + 1) th channel) is switched to the threshold voltage measurement mode (the ith channel is switched back to the HTGB mode), and the threshold voltage is measured for the channel. By analogy, the measurement can be done for the threshold voltages of all channels. Typically, the total number of channels in the system is less than 2000, so that all channel threshold voltage measurements can be completed in seconds.
Step 3: and communicating the other ends of the selection ends of the change-over switches of all the channels with a contact A of the corresponding change-over switch, switching the output of the first bias power supply VGG to the voltage bias required by the HTGB test, and returning the system to the HTGB test mode.
The control of Step 0-Step 3 is executed in a circulating way, so that the threshold voltage of each channel can be tested periodically in the HTGB testing process.
In summary, the high-temperature gate bias test device capable of measuring the threshold voltage comprises HTGB test equipment; HTGB test equipment is including the test connecting circuit that can with the device adaptation that awaits measuring be connected and can switch the switch switching circuit that awaits measuring the device test state, switch switching circuit and await measuring device, test connecting circuit adaptation are connected, can make test connecting circuit carry out HTGB experiment or threshold voltage measurement to the device that awaits measuring through switch switching circuit to can carry out threshold voltage measurement in the HTGB experiment to the device that awaits measuring.
In the embodiment of the present invention, the process of performing the HTGB test or the threshold voltage measurement on the device to be tested by the test connection circuit and the switch in cooperation may refer to the above description, and details are not repeated here.
The test connection circuit is connected with the device to be tested, and the switch switching circuit can enable the test connection circuit to carry out HTGB test or threshold voltage measurement on the device to be tested so as to carry out threshold voltage measurement in the HTGB test on the device to be tested; the test process is greatly simplified, only one test device is needed for HTGB test and threshold voltage measurement of the device to be tested, and the sample is not required to be frequently loaded and unloaded. Manpower is liberated, and the test can be automatically carried out after the test is started. The test efficiency is greatly improved, the threshold voltage can be completed in seconds or even shorter time, and the whole test period is shortened. All data are generated by one device, the program of the testing device can automatically integrate the threshold voltage and the data of the HTGB test, and the data analysis workload is greatly reduced.

Claims (10)

1. A high-temperature grid bias test method capable of measuring threshold voltage comprises HTGB test equipment; the method is characterized in that:
HTGB test equipment is including the test connecting circuit that can with the device adaptation that awaits measuring be connected and can switch the switch switching circuit that awaits measuring the device test state, switch switching circuit and await measuring device, test connecting circuit adaptation are connected, can make test connecting circuit carry out HTGB experiment or threshold voltage measurement to the device that awaits measuring through switch switching circuit to can carry out threshold voltage measurement in the HTGB experiment to the device that awaits measuring.
2. The method of claim 1, wherein the method comprises: the test connection circuit comprises a first bias power supply VGG and a second bias power supply VCC, and the switch switching circuit comprises a switch S1;
the negative end of the first bias power supply VGG is grounded, the positive end of the first bias power supply VGG is connected with the first end of the device to be tested through a current-limiting resistor RG, the second end of the device to be tested is connected with one end of the selection end of the switch S1, a contact A of the switch S1 is connected with the positive end of a second bias power supply VCC, the negative end of the second bias power supply VCC is grounded, a contact B of the switch S1 is connected with the third end of the device to be tested, the third end of the device to be tested is grounded through a leakage current sampling circuit, when the other end of the selection end of the switch S1 is connected with the contact A, the positive end of the second bias power supply VCC is connected with the second end of the device to be tested, and when the other end of the selection end of the switch S1 is connected with the contact B, the second end of the device to be tested;
when the device to be tested is an IGBT, a first end of the device to be tested is a grid end of the IGBT device, a second end of the device to be tested is a collector end, and a third end of the device to be tested is an emitter end; when the device to be tested is an MOS device, the first end of the device to be tested is the grid end of the MOS device, the second end of the device to be tested is the drain end of the MOS device, and the third end of the device to be tested is the source end of the MOS device.
3. The method of claim 1, wherein the method comprises: the test connection circuit comprises a first bias power supply VGG and a second bias power supply VCC, and the switch switching circuit comprises a switch S2 and a switch S3;
the negative end of the first bias power supply VGG is grounded, the positive end of the first bias power supply VGG is connected with one end of a current-limiting resistor RG, the other end of the current-limiting resistor RG is connected with a contact A of a switch S3, a contact B of a switch S3 is connected with the second end of the device to be tested and one end of a selection end of a switch S2, the first end of the device to be tested is connected with one end of the selection end of a switch S3, the third end of the device to be tested is connected with a contact B of a switch S2, the third end of the device to be tested is grounded through a leakage current sampling circuit, a contact A of the switch S2 is connected with the positive end of a second bias power supply VCC, and the negative end of the second bias power supply VCC is;
when the device to be tested is an IGBT, a first end of the device to be tested is a grid end of the IGBT device, a second end of the device to be tested is a collector end, and a third end of the device to be tested is an emitter end; when the device to be tested is an MOS device, the first end of the device to be tested is the grid end of the MOS device, the second end of the device to be tested is the drain end of the MOS device, and the third end of the device to be tested is the source end of the MOS device.
4. The method of claim 1, wherein the method comprises: the test connection circuit comprises a first bias power supply VGG and a leakage current sampling circuit, and the switch switching circuit comprises a switching switch S4;
the negative end of the first bias power supply VGG is grounded, the positive end of the first bias power supply VGG is connected with one end of a current-limiting resistor RG, the other end of the current-limiting resistor RG is connected with the first end of the device to be tested and a contact A of a change-over switch S4, a contact B of the change-over switch S4 is connected with the third end of the device to be tested, the second end of the device to be tested is connected with one end of a selection end of the change-over switch S4, and the third end of the device to be tested is grounded through a leakage current sampling circuit;
when the device to be tested is an IGBT, a first end of the device to be tested is a grid end of the IGBT device, a second end of the device to be tested is a collector end, and a third end of the device to be tested is an emitter end; when the device to be tested is an MOS device, the first end of the device to be tested is the grid end of the MOS device, the second end of the device to be tested is the drain end of the MOS device, and the third end of the device to be tested is the source end of the MOS device.
5. The method of claim 4, wherein the method comprises: when a plurality of devices to be tested are tested simultaneously, the first ends of all the devices to be tested are connected with the anode of a first bias power supply VGG through a current-limiting resistor RG, and the cathode end of the first bias power supply VGG is grounded;
after the other ends of the selection ends of all the change-over switches S4 and the other end of the selection end of the change-over switch S4 are connected with the contact B, HTGB test can be carried out on all the devices to be tested through the test connection circuit;
when the threshold voltage of any device to be tested is measured, the other end of the selection end of the selector switch S4 connected with the selected device to be tested is connected with the contact A, the voltage of the first bias power supply VFF is controlled until the current measured by the leakage current sampling circuit obtains the required value of the threshold voltage measurement condition, and the voltage value between the first end of the device to be tested and the third end of the device to be tested is the threshold voltage of the device to be tested.
6. A high-temperature grid bias test device capable of measuring threshold voltage comprises HTGB test equipment; the method is characterized in that:
HTGB test equipment is including the test connecting circuit that can with the device adaptation that awaits measuring be connected and can switch the switch switching circuit that awaits measuring the device test state, switch switching circuit and await measuring device, test connecting circuit adaptation are connected, can make test connecting circuit carry out HTGB experiment or threshold voltage measurement to the device that awaits measuring through switch switching circuit to can carry out threshold voltage measurement in the HTGB experiment to the device that awaits measuring.
7. The apparatus of claim 6, wherein the apparatus comprises: the test connection circuit comprises a first bias power supply VGG and a second bias power supply VCC, and the switch switching circuit comprises a switch S1;
the negative end of the first bias power supply VGG is grounded, the positive end of the first bias power supply VGG is connected with the first end of the device to be tested through a current-limiting resistor RG, the second end of the device to be tested is connected with one end of the selection end of the switch S1, a contact A of the switch S1 is connected with the positive end of a second bias power supply VCC, the negative end of the second bias power supply VCC is grounded, a contact B of the switch S1 is connected with the third end of the device to be tested, the third end of the device to be tested is grounded through a leakage current sampling circuit, when the other end of the selection end of the switch S1 is connected with the contact A, the positive end of the second bias power supply VCC is connected with the second end of the device to be tested, and when the other end of the selection end of the switch S1 is connected with the contact B, the second end of the device to be tested;
when the device to be tested is an IGBT, a first end of the device to be tested is a grid end of the IGBT device, a second end of the device to be tested is a collector end, and a third end of the device to be tested is an emitter end; when the device to be tested is an MOS device, the first end of the device to be tested is the grid end of the MOS device, the second end of the device to be tested is the drain end of the MOS device, and the third end of the device to be tested is the source end of the MOS device.
8. The apparatus of claim 6, wherein the apparatus comprises: the test connection circuit comprises a first bias power supply VGG and a second bias power supply VCC, and the switch switching circuit comprises a switch S2 and a switch S3;
the negative end of the first bias power supply VGG is grounded, the positive end of the first bias power supply VGG is connected with one end of a current-limiting resistor RG, the other end of the current-limiting resistor RG is connected with a contact A of a switch S3, a contact B of a switch S3 is connected with the second end of the device to be tested and one end of a selection end of a switch S2, the first end of the device to be tested is connected with one end of the selection end of a switch S3, the third end of the device to be tested is connected with a contact B of a switch S2, the third end of the device to be tested is grounded through a leakage current sampling circuit, a contact A of the switch S2 is connected with the positive end of a second bias power supply VCC, and the negative end of the second bias power supply VCC is;
when the device to be tested is an IGBT, a first end of the device to be tested is a grid end of the IGBT device, a second end of the device to be tested is a collector end, and a third end of the device to be tested is an emitter end; when the device to be tested is an MOS device, the first end of the device to be tested is the grid end of the MOS device, the second end of the device to be tested is the drain end of the MOS device, and the third end of the device to be tested is the source end of the MOS device.
9. The apparatus of claim 6, wherein the apparatus comprises: the test connection circuit comprises a first bias power supply VGG and a leakage current sampling circuit, and the switch switching circuit comprises a switching switch S4;
the negative end of the first bias power supply VGG is grounded, the positive end of the first bias power supply VGG is connected with one end of a current-limiting resistor RG, the other end of the current-limiting resistor RG is connected with the first end of the device to be tested and a contact A of a change-over switch S4, a contact B of the change-over switch S4 is connected with the third end of the device to be tested, the second end of the device to be tested is connected with one end of a selection end of the change-over switch S4, and the third end of the device to be tested is grounded through a leakage current sampling circuit;
when the device to be tested is an IGBT, a first end of the device to be tested is a grid end of the IGBT device, a second end of the device to be tested is a collector end, and a third end of the device to be tested is an emitter end; when the device to be tested is an MOS device, the first end of the device to be tested is the grid end of the MOS device, the second end of the device to be tested is the drain end of the MOS device, and the third end of the device to be tested is the source end of the MOS device.
10. The apparatus of claim 9, wherein the apparatus comprises: when a plurality of devices to be tested are tested simultaneously, the first ends of all the devices to be tested are connected with the anode of a first bias power supply VGG through a current-limiting resistor RG, and the cathode end of the first bias power supply VGG is grounded;
after the other ends of the selection ends of all the change-over switches S4 and the other end of the selection end of the change-over switch S4 are connected with the contact B, HTGB test can be carried out on all the devices to be tested through the test connection circuit;
when the threshold voltage of any device to be tested is measured, the other end of the selection end of the selector switch S4 connected with the selected device to be tested is connected with the contact A, the voltage of the first bias power supply VFF is controlled until the current measured by the leakage current sampling circuit obtains the required value of the threshold voltage measurement condition, and the voltage value between the first end of the device to be tested and the third end of the device to be tested is the threshold voltage of the device to be tested.
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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112946448A (en) * 2021-01-27 2021-06-11 国网浙江省电力有限公司电力科学研究院 High-low voltage test equipment for power device
CN112986782A (en) * 2021-02-23 2021-06-18 国网浙江省电力有限公司电力科学研究院 Power semiconductor characteristic parameter test system
CN113358991A (en) * 2021-04-06 2021-09-07 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） High-temperature grid bias test method of SiC MOSFET device, computer equipment and storage medium
CN114325286A (en) * 2021-12-31 2022-04-12 浙江大学杭州国际科创中心 SiC MOSFET power cycle test circuit and control method thereof
CN115291070A (en) * 2022-07-29 2022-11-04 杭州中安电子有限公司 HDRB and HDGB testing method and device based on dynamic state
CN115469143A (en) * 2022-09-07 2022-12-13 华电(烟台)功率半导体技术研究院有限公司 Circuit and method for measuring threshold voltage in power cycle process
CN115639454A (en) * 2022-10-18 2023-01-24 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） Threshold voltage monitoring circuit for SiC MOSFET high-temperature reverse bias or high-temperature grid bias test
CN115712044A (en) * 2022-10-18 2023-02-24 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） Threshold voltage monitoring circuit for SiC MOSFET power cycle test
CN116224003A (en) * 2022-12-26 2023-06-06 重庆大学 Threshold voltage stability test circuit of MOS type semiconductor device
CN116520114A (en) * 2023-03-09 2023-08-01 重庆大学 MOS type semiconductor device testing equipment

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080113987A (en) * 2007-06-26 2008-12-31 용인송담대학 산학협력단 High temperature reverse bias tester for monitoring defective semiconductor device in real-time
CN103913688A (en) * 2013-01-07 2014-07-09 北大方正集团有限公司 MOS transistor characteristic testing circuit and method
CN109596964A (en) * 2018-12-26 2019-04-09 山东阅芯电子科技有限公司 The method and system of compatible a variety of environmental aging tests
CN109782147A (en) * 2018-12-26 2019-05-21 中国电子科技集团公司第五十五研究所 A kind of silicon carbide MOSFET high temperature grate bias testing method
CN110673009A (en) * 2019-10-14 2020-01-10 北京工业大学 Grid leakage short circuit and grid voltage supply device for measuring SiC MOS thermal resistance under high voltage

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080113987A (en) * 2007-06-26 2008-12-31 용인송담대학 산학협력단 High temperature reverse bias tester for monitoring defective semiconductor device in real-time
CN103913688A (en) * 2013-01-07 2014-07-09 北大方正集团有限公司 MOS transistor characteristic testing circuit and method
CN109596964A (en) * 2018-12-26 2019-04-09 山东阅芯电子科技有限公司 The method and system of compatible a variety of environmental aging tests
CN109782147A (en) * 2018-12-26 2019-05-21 中国电子科技集团公司第五十五研究所 A kind of silicon carbide MOSFET high temperature grate bias testing method
CN110673009A (en) * 2019-10-14 2020-01-10 北京工业大学 Grid leakage short circuit and grid voltage supply device for measuring SiC MOS thermal resistance under high voltage

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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CN112986782A (en) * 2021-02-23 2021-06-18 国网浙江省电力有限公司电力科学研究院 Power semiconductor characteristic parameter test system
CN113358991A (en) * 2021-04-06 2021-09-07 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） High-temperature grid bias test method of SiC MOSFET device, computer equipment and storage medium
CN114325286A (en) * 2021-12-31 2022-04-12 浙江大学杭州国际科创中心 SiC MOSFET power cycle test circuit and control method thereof
CN115291070A (en) * 2022-07-29 2022-11-04 杭州中安电子有限公司 HDRB and HDGB testing method and device based on dynamic state
CN115291070B (en) * 2022-07-29 2024-03-19 杭州中安电子有限公司 HDRB and HDGB test method and device based on dynamic state
CN115469143A (en) * 2022-09-07 2022-12-13 华电(烟台)功率半导体技术研究院有限公司 Circuit and method for measuring threshold voltage in power cycle process
CN115639454A (en) * 2022-10-18 2023-01-24 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） Threshold voltage monitoring circuit for SiC MOSFET high-temperature reverse bias or high-temperature grid bias test
CN115712044A (en) * 2022-10-18 2023-02-24 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） Threshold voltage monitoring circuit for SiC MOSFET power cycle test
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CN116224003B (en) * 2022-12-26 2023-11-14 重庆大学 Threshold voltage stability test circuit of MOS type semiconductor device
CN116520114A (en) * 2023-03-09 2023-08-01 重庆大学 MOS type semiconductor device testing equipment

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