CN109782147A - A kind of silicon carbide MOSFET high temperature grate bias testing method - Google Patents
A kind of silicon carbide MOSFET high temperature grate bias testing method Download PDFInfo
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Abstract
The invention discloses a kind of silicon carbide MOSFET high temperature grate bias testing methods, it is switched fast by electronic switch between grid bias-voltage and threshold voltage test module, realize in-situ test of the silicon carbide MOSFET threshold voltage after high temperature grate is tested partially, it prevents threshold voltage from restoring after the test, causes the error of test value；Influence of the test stress to threshold voltage is more accurately characterized by forward scan mode and negative sense scanning mode, simultaneously by under a series of time points, the automatic collection of threshold voltage test value can calculate the recovery situation of different components threshold voltage in same time period.The present invention solves the prior art and tests the limitation for silicon carbide MOSFET partially in high temperature grate, can the grid oxygen quality to silicon carbide MOSFET carry out accurate evaluation test.
Description
Technical field
The invention belongs to semiconductor devices field of measuring technique, and in particular to a kind of silicon carbide MOSFET high temperature grate bias testing
Method.
Background technique
The advantages that silicon carbide is a kind of semiconductor material with wide forbidden band, has forbidden bandwidth big, high temperature resistant, high heat conductance, extensively
The general preparation for power electronic devices.Silicon carbide MOSFET is the electronic power switch device based on carbofrax material production,
Fast with switching speed, high pressure resistant, current density is big, a series of advantage such as high temperature resistant, at present in Switching Power Supply, inverter,
There is great application space in charging pile, photovoltaic, the fields such as automotive electronics.
Threshold voltage is an important parameter of MOSFET, and when in use, gate drive voltage is according to the threshold of device for device
Threshold voltage designs, and guarantees shutdown and the normally of device.
There are electron traps between the grid oxygen dielectric layer and silicon carbide body material of silicon carbide MOSFET, when continuous long-time
Electrons are captured by these electron traps when applying positive grid voltage to device, lead to the positive excursion of device threshold voltage.In SiC
Hole trap is equally existed between the grid oxygen dielectric layer and silicon carbide body material of MOSFET element, device is applied for a long time when continuous
Hole can be captured by these traps when adding minus gate voltage, and the negative sense of device threshold voltage is caused to drift about.Meanwhile this drifting in grid
It is also partially to restore after voltage removal, the value that test threshold voltage obtains after different power-off times is different
's.
Since SiC MOSFET is easy to happen thermal runaway phenomenon, and threshold voltage has obvious drift in device test procedures
It moves, causes high temperature grate to be tested partially and its electrical test results depend critically upon test condition, the testing time after testing partially such as high temperature grate
The factors such as interval length, grid voltage scanning mode and test temperature can seriously affect test result, according to current JEDEC
Electrical measurement condition after the inclined experimental condition of high temperature grate specified in JESD-22A108C and test, may obtain wrong conclusion, needle
Silicon carbide MOSFET device is not properly suited for the high temperature grate bias testing method of silicon MOSFET, it is therefore desirable to be directed to silicon carbide
The inclined test method of MOSFET high temperature grate is studied, and the test method for being suitable for SiC MOSFET element is formed.
Summary of the invention
The purpose of the present invention is to provide a kind of silicon carbide MOSFET high temperature grate bias testing methods, to silicon carbide MOSFET
Grid oxygen quality carries out accurate evaluation test.
Realize the technical solution of the object of the invention are as follows: a kind of silicon carbide MOSFET high temperature grate bias testing method, including it is following
Step:
1) test system building: the inclined system of high temperature grate by bias voltage source, baking oven, threshold voltage detection module, timing and
Four part of Logic control module is constituted, and wherein bias voltage source is made of positive voltage source, negative voltage source and pulse voltage source, positive electricity
Potential source is used to detect the drift of positive grid voltage lower threshold voltages, and negative voltage source is for detecting negative sense grid voltage lower threshold value electricity
The drift of pressure, pulse voltage source are used to detect the drift of the pulse grid voltage lower threshold voltages of certain frequency；
2) connection of test macro: the array board of device under test is put into baking oven, array board passes through high speed electronic switch point
It is not connected with bias voltage source and threshold voltage detection module；Timing and Logic control module are connected to high speed electronic switch,
Control high speed electronic switch being opened and being closed, for switching high temperature grate bias-voltage for giving threshold voltage detection；
3) increase forward scan mode and negative sense scanning mode for threshold voltage detection part grid voltage scanning mode；
4) carry out test operation: then selection positive voltage, negative voltage or pulse voltage add grid voltage on grid, will
Device under test is put into baking oven and is tested according to the time of regulation, carries out threshold voltage survey after test period in situ
Examination；
5) carry out threshold voltage test: selection forward scan mode or negative sense scan pattern realize grid by electronic switch
Bias-voltage closing is switched fast with what threshold voltage was tested, in the moment t for closing grid voltage0The survey of moment progress threshold voltage
Examination；
6) a series of time point is set simultaneously, and automatic repetition is surveyed at every point of time for timing and Logic control module control
It tries the threshold voltage of device and automatically records；
7) some time point t is calculatedXWith removal grid bias-voltage t0The difference for two threshold voltages that moment measures, as threshold
Value restores voltage.
Compared with prior art, remarkable advantage of the invention are as follows: (1) present invention solves the prior art and tries partially in high temperature grate
The limitation for silicon carbide MOSFET is tested, the shutdown voltage of silicon carbide MOSFET is generally negative pressure, therefore increases negative sense electricity
The inclined threshold voltage test of the high temperature grate of pressure；Active gate voltage of the silicon carbide MOSFET in applied power electronics system is simultaneously
Pulse voltage, therefore the inclined threshold voltage test of high temperature grate for increasing pulse voltage；(2) due to grid oxygen dielectric layer and SiC body material
There are electron trap between material, forward voltage is applied to meeting on grid so that electronics is captured by electron trap, leads to threshold voltage
Positive excursion；It is also to apply the mistake of forward voltage to grid in the process for carrying out threshold voltage test to silicon carbide MOSFET
Journey, therefore forward scan and negative sense scanning two ways are chosen, the threshold voltage of silicon carbide MOSFET is characterized in different modes；
(3) it is switched fast by electronic switch between grid bias-voltage and threshold voltage test module, realizes silicon carbide MOSFET threshold
The in-situ test of threshold voltage, prevents threshold voltage from restoring after the test, causes the error of test value；(4) simultaneously by pair
Under a series of time points, the automatic collection of threshold voltage test value can calculate different components threshold value electricity in same time period
The recovery situation of pressure.
Detailed description of the invention
Fig. 1 is test flow chart of the invention.
Fig. 2 is that experimental provision of the invention builds figure.
Fig. 3 is the schematic diagram of threshold voltage forward scan and the scanning of threshold voltage negative sense.
Fig. 4 is the threshold voltage test curve and result of high temperature grate test record automatic under short time time series to the rear
Schematic diagram.
Specific embodiment
As shown in Figure 1, a kind of silicon carbide MOSFET high temperature grate bias testing method, comprising the following steps:
1) test system building: the inclined system of high temperature grate by bias voltage source, baking oven, threshold voltage detection module, timing and
Four part of Logic control module is constituted, and wherein bias voltage source is made of positive voltage source, negative voltage source and pulse voltage source, positive electricity
Potential source is used to detect the drift of positive grid voltage lower threshold voltages, and negative voltage source is for detecting negative sense grid voltage lower threshold value electricity
The drift of pressure, pulse voltage source are used to detect the drift of the pulse grid voltage lower threshold voltages of 50Hz~100KHz；
2) connection of test macro: the array board of device under test is put into baking oven, array board passes through high speed electronic switch point
It is not connected with bias voltage source and threshold voltage detection module；Timing and Logic control module are connected to high speed electronic switch,
Control high speed electronic switch being opened and being closed, for switching high temperature grate bias-voltage for giving threshold voltage detection；In the present invention
High temperature refers to 25 DEG C~175 DEG C.
3) increase forward scan for threshold voltage detection part grid voltage scanning mode and negative sense scans, forward scan
It is that initial gate voltage when threshold voltage is tested is set as 0V, voltage is gradually increased by 0V, detects drain-source current, when drain-source electricity
Stream thinks that voltage at this time is the threshold voltage under forward scan when increasing to specified value；Negative sense scanning is that threshold voltage is surveyed
Initial gate voltage when examination is set as a certain high level V0, thus value gradually decreases voltage, drain-source current is detected, when drain-source current subtracts
It is small to specified value when think at this time voltage be threshold voltage under negative sense scanning；
4) carry out test operation: then selection positive voltage, negative voltage or pulse voltage add grid voltage on grid, will
Device under test is put into baking oven and is tested according to the time of regulation, carries out threshold voltage survey after test period in situ
Examination；
5) carry out threshold voltage test: selection forward voltage scan pattern or negative voltage scan pattern pass through electronic cutting
It closes and realizes that the closing of grid bias-voltage is switched fast with what threshold voltage was tested, in the moment t for closing grid voltage0Moment carries out threshold value
The test of voltage；
6) a series of time point is set simultaneously, and automatic repetition is surveyed at every point of time for timing and Logic control module control
It tries the threshold voltage of device and automatically records；
7) some time point t is calculatedXWith removal grid bias-voltage t0The difference for two threshold voltages that moment measures is to get arriving
After threshold voltage drifts about under electric heating stress, t after grid bias-voltage is removedX-t0The recovery extent occurred again in period, two
The difference of a threshold voltage is that threshold value restores voltage.
Due between grid oxygen dielectric layer and SiC body material there are electron trap, the electron trap under electric stress and thermal stress
Meeting trapped electron or hole, cause silicon carbide device that threshold voltage shift, while this drift can occur after high temperature grate is tested partially
Moving is also partially to restore, and the threshold voltage of accurate characterization silicon carbide device is particularly significant；Pass through grid bias-voltage and threshold value electricity
Electronic switch is switched fast between pressure test module, realizes silicon carbide MOSFET threshold voltage after high temperature grate is tested partially
In-situ test prevents threshold voltage from restoring after the test, causes the error of test value.Pass through forward scan mode and negative sense
Scanning mode more accurately characterizes influence of the test stress to threshold voltage, while by under a series of time points, threshold value
The automatic collection of voltage tester value can calculate the recovery situation of different components threshold voltage in same time period.
The following describes the present invention in detail with reference to examples.
Embodiment
As shown in Figure 1, a kind of silicon carbide MOSFET high temperature grate bias testing method, comprising the following steps:
1) test macro is constituted: the inclined system of high temperature grate is by voltage source, baking oven, threshold voltage detection, timing and logic control
Four part of module is constituted, and wherein voltage source is made of positive voltage source, negative voltage source and pulse voltage source, and positive voltage source V ﹢ is for examining
The drift of positive grid voltage lower threshold voltages is surveyed, negative voltage source V- is used to detect the drift of negative sense grid voltage lower threshold voltages
It moves, pulse voltage source Vp is used to detect the drift of the pulse grid voltage lower threshold voltages of certain frequency.
2) connection of test macro: the array board of device under test DUT is put into baking oven, array board passes through high speed electronic switch
It is connected respectively with bias voltage source with threshold voltage detection module.Timing and Logic control module are connected to high-velocity electrons and open
It closes, controls opening and being closed for high speed electronic switch, for switching high temperature grate bias-voltage for giving threshold voltage detection.
3) carry out test operation: then selection positive voltage, negative voltage or pulse voltage add grid voltage on grid, press
The defined time does high temperature grate and tests partially.
4) the desired high temperature grate inclined time is reached, it is in situ to carry out threshold voltage test, it chooses forward scan or negative sense is swept
Mode is retouched, issues and instructs to high speed electronic switch, the wink of high speed electronic switch certain station grid bias-voltage on cutting DUT array plate
Between be switched to threshold voltage detection module.
5) threshold voltage detection module complete in a very short period of time to silicon carbide MOSFET threshold voltage it is a series of when
Between put under test.According to tXWith t0The difference of moment threshold voltage can obtain the recovery situation of threshold voltage.
6) high speed electronic switch is controlled, the lower station of DUT array plate is switched to, is repeated 3) to process 5).
With reference to the accompanying drawing come illustrate we to certain commercialization inclined threshold voltage shift of 1200V silicon carbide MOSFET high temperature grate and
The test process of recovery situation:
Such as Fig. 2 test system building, device under test is prevented setting on the inclined array board of grid.
Control high speed electronic switch is switched to bias voltage source negative voltage -10V, carries out gate bias examination according to the regulation time
It tests.
Off-test keeps grid bias-voltage V-, oven temperature is reduced to room temperature.
Threshold voltage test is carried out in situ, and the present embodiment utilizes switch selection forward scan mode.Logic module issues
Threshold voltage detection module is connected while bias voltage source high speed electronic switch is cut off in instruction, if Fig. 3 module is to issue
The staircase waveform being gradually increased is applied to MOSFET grid, while module detection drain-source current reaches specified value and thinks that staircase waveform reaches
The value arrived is device threshold voltage.Specified value is set as 500uA in the present embodiment.
10ms, 50ms after broken grid bias-voltage are tested automatically and recorded to logic module by control high speed electronic switch,
Data after the times such as 100ms, 500ms, this time can unrestricted choice, but must guarantee the time it is small as far as possible.
Terminate recovery feelings of the threshold voltage shift of initial time to 3.27V, after threshold voltage shift as Fig. 4 obtains experiment
Condition is as shown in curve in figure.
Logic module is switched to next station test by controlling high speed electronic switch, repeats preceding step.
Claims (3)
1. a kind of silicon carbide MOSFET high temperature grate bias testing method, which comprises the following steps:
1) test system building: the inclined system of high temperature grate is by bias voltage source, baking oven, threshold voltage detection module, timing and logic
Four part of control module is constituted, and wherein bias voltage source is made of positive voltage source, negative voltage source and pulse voltage source, positive voltage source
For detecting the drift of positive grid voltage lower threshold voltages, negative voltage source is for detecting negative sense grid voltage lower threshold voltages
Drift, pulse voltage source are used to detect the drift of the pulse grid voltage lower threshold voltages of certain frequency；
2) connection of test macro: being put into baking oven for the array board of device under test, array board by high speed electronic switch respectively with
Bias voltage source is connected with threshold voltage detection module；Timing and Logic control module are connected to high speed electronic switch, control
High speed electronic switch being opened and being closed, for switching high temperature grate bias-voltage for giving threshold voltage detection；
3) increase forward scan mode and negative sense scanning mode for threshold voltage detection part grid voltage scanning mode；
4) carry out test operation: then selection positive voltage, negative voltage or pulse voltage add grid voltage on grid, will be to be measured
Device is put into baking oven and is tested according to the time of regulation, carries out threshold voltage test after test period in situ；
5) carry out threshold voltage test: selection forward scan mode or negative sense scan pattern realize that grid are partially electric by electronic switch
Pressure is closed and is switched fast with what threshold voltage was tested, in the moment t for closing grid voltage0The test of moment progress threshold voltage；
6) a series of time point is set simultaneously, and timing and Logic control module control automatic retest device at every point of time
The threshold voltage of part simultaneously automatically records；
7) some time point t is calculatedXWith removal grid bias-voltage t0The difference for two threshold voltages that moment measures, as threshold value are extensive
Complex voltage.
2. silicon carbide MOSFET high temperature grate bias testing method according to claim 1, which is characterized in that pulse voltage source is used
In the drift of the pulse grid voltage lower threshold voltages of detection 50Hz~100KHz.
3. silicon carbide MOSFET high temperature grate bias testing method according to claim 1, which is characterized in that forward scan mode
It is that initial gate voltage when threshold voltage is tested is set as 0V, voltage is gradually increased by 0V, detects drain-source current, when drain-source electricity
Stream thinks that voltage at this time is the threshold voltage under forward scan when increasing to specified value；Negative sense scanning mode is threshold value electricity
Initial gate voltage when pressure test is set as a certain high level V0, thus value gradually decreases voltage, drain-source current is detected, when drain-source electricity
Stream thinks that voltage at this time is the threshold voltage under negative sense scanning when being reduced to specified value.
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Cited By (9)
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| CN110763972A (en) * | 2019-10-31 | 2020-02-07 | 上海华力集成电路制造有限公司 | Method for measuring threshold voltage of MOSFET |
| CN111638437A (en) * | 2020-06-09 | 2020-09-08 | 山东阅芯电子科技有限公司 | High-temperature grid bias test method and device capable of measuring threshold voltage |
| CN112526313A (en) * | 2019-08-27 | 2021-03-19 | 三菱电机株式会社 | SEB resistance evaluation method and SEB resistance evaluation device |
| CN113325292A (en) * | 2021-07-09 | 2021-08-31 | 华北电力大学 | Power semiconductor device gate oxide performance parameter measuring circuit and measuring method thereof |
| CN113358991A (en) * | 2021-04-06 | 2021-09-07 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | High-temperature grid bias test method of SiC MOSFET device, computer equipment and storage medium |
| CN113484711A (en) * | 2021-07-09 | 2021-10-08 | 华北电力大学 | Multi-device parallel high-temperature grid bias test platform and test method thereof |
| CN114200275A (en) * | 2020-08-31 | 2022-03-18 | 株洲中车时代半导体有限公司 | High-temperature grid bias test method and system for silicon carbide MOSFET device |
| CN115291070A (en) * | 2022-07-29 | 2022-11-04 | 杭州中安电子有限公司 | HDRB and HDGB testing method and device based on dynamic state |
| CN118376900A (en) * | 2024-06-24 | 2024-07-23 | 北京七星华创微电子有限责任公司 | Testing method of field effect transistor |
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| CN112526313B (en) * | 2019-08-27 | 2023-12-29 | 三菱电机株式会社 | SEB resistance evaluation method and SEB resistance evaluation device |
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| CN111638437B (en) * | 2020-06-09 | 2023-03-21 | 山东阅芯电子科技有限公司 | High-temperature grid bias test method and device capable of measuring threshold voltage |
| CN111638437A (en) * | 2020-06-09 | 2020-09-08 | 山东阅芯电子科技有限公司 | High-temperature grid bias test method and device capable of measuring threshold voltage |
| CN114200275A (en) * | 2020-08-31 | 2022-03-18 | 株洲中车时代半导体有限公司 | High-temperature grid bias test method and system for silicon carbide MOSFET device |
| CN114200275B (en) * | 2020-08-31 | 2024-05-14 | 株洲中车时代半导体有限公司 | High-temperature gate bias test method and system for silicon carbide MOSFET device |
| CN113358991A (en) * | 2021-04-06 | 2021-09-07 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | High-temperature grid bias test method of SiC MOSFET device, computer equipment and storage medium |
| CN113484711A (en) * | 2021-07-09 | 2021-10-08 | 华北电力大学 | Multi-device parallel high-temperature grid bias test platform and test method thereof |
| CN113325292A (en) * | 2021-07-09 | 2021-08-31 | 华北电力大学 | Power semiconductor device gate oxide performance parameter measuring circuit and measuring method thereof |
| CN115291070A (en) * | 2022-07-29 | 2022-11-04 | 杭州中安电子有限公司 | HDRB and HDGB testing method and device based on dynamic state |
| CN115291070B (en) * | 2022-07-29 | 2024-03-19 | 杭州中安电子有限公司 | HDRB and HDGB test method and device based on dynamic state |
| CN118376900A (en) * | 2024-06-24 | 2024-07-23 | 北京七星华创微电子有限责任公司 | Testing method of field effect transistor |
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Application publication date: 20190521 |