CN113514746A - High-temperature high-humidity high-pressure reverse bias test system and method for high-voltage high-power device - Google Patents
High-temperature high-humidity high-pressure reverse bias test system and method for high-voltage high-power device Download PDFInfo
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- CN113514746A CN113514746A CN202110403565.4A CN202110403565A CN113514746A CN 113514746 A CN113514746 A CN 113514746A CN 202110403565 A CN202110403565 A CN 202110403565A CN 113514746 A CN113514746 A CN 113514746A
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- G—PHYSICS
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/003—Environmental or reliability tests
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
Abstract
The invention relates TO a high-temperature high-humidity high-pressure reverse bias test system and a test method thereof for high-pressure high-power devices, which can simultaneously check the reliability of more than 80 TO power devices in a high-temperature high-humidity high-pressure environment, can flexibly test power devices packaged in different types according TO the model sizes of the devices and other packages such as a welding module, a crimping module and the like, has low price of an experiment platform and flexibility of experiment working conditions, and can achieve considerable economic benefits.
Description
Technical Field
The invention relates to the field of reliability test of power semiconductor devices, in particular to a high-temperature high-humidity high-pressure reverse bias test system and a test method of a high-pressure high-power device.
Background
With the rapid development of the flexible direct current transmission technology and the new energy power technology, the reliability of the core power electronic power device is more and more emphasized by people. Particularly, power devices in offshore wind power generation and electric vehicles are in more severe operating environments with high temperature, high humidity and high pressure, and reliability test of the power devices is particularly necessary. The reliability test of the high-temperature, high-humidity and high-pressure device at present is carried out at high temperatureAnd under the high-humidity environment, introducing high voltage into the source electrode and the drain electrode of the device, blocking the device by short-circuiting the grid electrode and the source electrode of the MOSFET device, and measuring the change of leakage current so as to reflect the aging process of the device. As the IEC standard is adopted internationally, the device is placed in an environment of 85 ℃/85% RH, a voltage value of 80V of the maximum value of the device is applied, and the device is made to operate for 1000 hours under the working condition of simulating the operation life of 25 years, so that the long-term reliability of the device in the high-temperature and high-humidity environment is checked. Normally device blocking leakage current
The blocking leakage current of the device is considered to be larger than the Datasheet limit value or larger than 10 times of the leakage current measured in the initial stage under the environment of high temperature, high humidity and high pressure, and then the device is regarded as failure.
However, the international research and development is actively carried out on the high-temperature, high-humidity and high-pressure test of the high-voltage high-power device, but the progress is slow. A small part of factory companies such as foreign English flying and Hangzhou Zhongan electronics company Limited in China respectively provide respective test devices for high-temperature, high-humidity and high-pressure tests of devices, and the manufacturing price of the high-temperature, high-humidity and high-pressure devices reaches dozens of ten thousand yuan; the temperature is limited to 0-100 ℃ which is a certain specific temperature, and the types of the test devices are too simple.
Disclosure of Invention
Aiming at one of the defects or defects of high price, relative limitation of testing conditions, single quantity of testing devices and the like of the conventional reliability testing platform, the invention provides the high-temperature high-humidity high-pressure reverse bias testing system for the high-pressure high-power device, which can be used for simultaneously checking the reliability of more than 80 paths of TO power devices in a high-temperature high-humidity high-pressure environment, flexibly testing power devices packaged in different types according TO the model sizes of the devices according TO other packages such as a welding module, a crimping module and the like, and has the advantages of low price of the experimental platform, flexible testing working conditions and capability of reaching a certain considerable economic effect. Therefore, the technical scheme adopted by the invention is as follows:
the high-temperature high-humidity high-pressure reverse deviation testing system for the high-pressure high-power device comprises a Border power supply, a circuit board, a control board and a constant-temperature heating platform, wherein a fixing plate of the high-pressure power device to be tested is fixedly arranged above the constant-temperature heating platform, a humidity cover covering the fixing plate of the device to be tested is arranged above the fixing plate of the device to be tested, the humidity cover can be opened and closed, a humidity detection sensor is arranged in the humidity cover, purified water or salt water is filled in a water tank, a humidifier is arranged in the water tank, and mist or salt mist generated by the humidifier can be conveyed into the humidity cover through a pipeline; the circuit board is formed by connecting N test branches in parallel, each test branch comprises a high-voltage relay, a protective resistor, a sampling resistor and a clamping diode, the working end of the high-voltage relay is connected with the positive end of the Bohr power supply, the other end of the high-voltage relay is connected with the drain electrode of a high-voltage power device to be tested through the protective resistor, the source electrode of the high-voltage power device to be tested is connected with the negative end of the Bohr power supply through the sampling resistor, the positive end of the clamping diode is connected with the grid electrode of the high-voltage power device to be tested, and the negative end of the clamping diode is connected with the negative end of the Bohr power supply; the control panel comprises an ADC acquisition module, a relay module and a single chip microcomputer connected with the relay module, the ADC acquisition end of the ADC acquisition module is respectively connected with the source electrode of the high-voltage power device to be tested and is communicated with the serial port of a PC (personal computer), the relay control end of the relay module is respectively connected with the signal control end of the high-voltage relay, and the single chip microcomputer is connected with the PC through a control signal line; and the PC is provided with a labview data acquisition program.
Further, the resistance of the protection resistor is 100K Ω, and the resistance of the sampling resistor is 10K Ω; the model of the clamping diode is ESD5Z5.0T1G; the relay module is JB-8RG-H1Z-12V in model number; the ADC acquisition module is ADS 1256; the model of the single chip microcomputer is STM32F103C8T 6.
The invention also provides a test method of the high-temperature high-humidity high-pressure reverse bias test system of the high-voltage high-power device, and three modes can be selected:
when a high-temperature mode is selected, the Bohr power supply provides 0-6KV high voltage for the high-voltage relay, the constant-temperature heating platform is connected with 220V alternating current, so that a high-voltage power device to be tested is in a working condition of 0-200 ℃, and the test is carried out according to the HTRB JESD22-A108F standard;
when a high-temperature high-humidity mode is selected, a Bohr power supply provides 0-6KV high voltage for a high-voltage relay, a constant-temperature heating platform and a humidifier are connected with 220V alternating current, purified water contained in a water tank is conveyed to the humidifier, heating is stopped when the constant-temperature heating platform reaches a set temperature, the humidifier stops atomizing when a humidity detection sensor detects that the humidity in a humidity hood reaches the set humidity, a high-voltage power device to be tested is made to be in a working condition of 0-120 ℃ and 0-98% RH, and testing is carried out according to the standard of HV-H3TRB ECPE Guiiline PSRRA 01;
when a high-temperature salt spray mode is selected, a Boer power supply provides 0-6KV high voltage for a high-voltage relay, a constant-temperature heating platform and a humidifier are connected with 220V alternating current, NaCl solution with the pH value of 6.5-7.2 is filled in a water tank and is conveyed to the humidifier, heating is stopped when the constant-temperature heating platform reaches a set temperature, the humidifier stops atomizing when a humidity detection sensor detects that the humidity in a humidity hood reaches the set humidity, the high-voltage power device to be tested is in a salt spray working condition with the temperature of 0-120 ℃ and the humidity of 0-98% RH, and testing is carried out according to the SACT PHERE MIL-STD-883J METHOD 1009.8 standard.
Compared with the prior art, the experimental platform is low in price, flexible in experimental working condition and capable of achieving considerable economic benefits.
The prominent substantive features are mainly embodied in the following aspects:
1. and (5) working condition flexibility. The accessible regulation and control temperature controller, humidity transducer, power regulator are closed loop control respectively, and the adjusting device is at the reliability variation under different temperature, different humidity and different voltage operating modes, and then reflects the true condition of device work more comprehensively.
2. And testing the diversity. The device can perform high-temperature, high-humidity and high-pressure reliability experimental examination on high-power devices packaged differently, the test efficiency of device samples is improved, the research and development cost of the devices is reduced, and the research and development period of the devices is shortened.
3. And (5) testing the reliability. An overcurrent monitoring system and an overvoltage protection circuit are arranged in the test platform, and fault branches are quickly cut off through two stages of relays, so that the safety of devices and tests can be protected at the moment.
4. And (4) data accuracy. On the basis of the existing international universal standard method, the reliability of the device can be displayed by measuring the acquired muA-level leakage current change indirectly under the condition of fully considering the insulation problem, and a mean filtering algorithm is added when testing detection data, and mean filtering is carried out every 30 min; and the built-in data packet stores data at each moment, so that subsequent data analysis is facilitated, and the correctness of test data is ensured.
5. The mode is diverse. The designed high-temperature and high-humidity integrated device is internally provided with three modes, namely a high-temperature mode, a high-temperature and high-humidity mode and a high-temperature salt spray mode. The method can select proper conditions according to different test working conditions, the temperature can be up to 200 ℃ at most in a high-temperature mode, and the device can be subjected to high-temperature reverse bias test; under the high-temperature and high-humidity mode, the temperature can reach 120 ℃ at most, and the humidity can reach 98% relative humidity at most, so that a high-temperature and high-humidity reverse bias test can be performed on the device; in a salt spray mode: salt fog can be generated to simulate the working condition of the sea, and the temperature can reach 120 ℃ at most.
Drawings
Fig. 1 is a schematic structural view of the present invention.
FIG. 2 is a flow chart of the testing method of the present invention.
Fig. 3 is a schematic structural diagram of a circuit board according to an embodiment of the present invention.
Fig. 4 is a schematic structural diagram of a control board according to an embodiment of the present invention.
Detailed Description
The high-temperature high-humidity high-pressure reverse bias test system for the high-pressure high-power device disclosed by the invention can be used for simultaneously checking the reliability of more than 80 TO power devices in a high-temperature high-humidity high-pressure environment, but the system is not limited TO a TO module, and can be used for flexibly testing power devices packaged in different types according TO the model sizes of the devices and other packages such as a welding module, a crimping module and the like.
In order to more clearly describe the technical solution of the present invention, the technical solution of the present invention will be further clearly and completely described below with reference to the accompanying drawings, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the following, a 24-way branch circuit and a high-voltage power device to be tested DUT are exemplified by using an N-type MOSFET.
A high-temperature high-humidity high-pressure reverse deviation testing system of a high-voltage high-power device comprises a Border power supply V1, a circuit board 100, a control panel 200 and a constant-temperature heating platform 300, wherein a high-voltage power device fixing plate 400 to be tested is fixedly arranged above the constant-temperature heating platform 300, a humidity cover 500 covering the device fixing plate 400 to be tested is arranged above the device fixing plate 400 to be tested, the humidity cover 500 can be opened and closed, a humidity detection sensor 600 is arranged in the humidity cover 500, purified water or salt water is contained in a water tank 700, a humidifier is arranged in the water tank, and mist or salt mist generated by the humidifier can be conveyed into the humidity cover 500 through a pipeline; the circuit board 100 is formed by connecting 24 test branches in parallel, each test branch comprises a high-voltage relay K1, a K2 … K24, a protection resistor R1-1, a R2-1 … R24-1, a sampling resistor R1-2, a R2-2 … R24-2, a clamping diode D1 and a D2 … D24, working ends of the high-voltage relays K1 and K2 … K24 are connected with a positive end of the Bohr power supply V1, the other ends of the high-voltage relays K1 and K2 … K24 are connected with a DUT1 to be tested and a DUT D of a DUT2 … DUT24 through the protection resistors R1-1, R2-1R 1 … R24-1, sources S of the DUT1 and the DUT1 are connected with a negative clamping end of the Bohr power supply V1 through the sampling resistors R1-2, R1-2 1R 1-2 1D, and the positive end of the high-1D are connected with a negative clamping diode D1 of the Bohr power device to be tested, The grid G and the negative end of the DUT2 … DUT24 are connected with the negative end of the Bohr power supply V1; the control board 200 comprises an ADC acquisition module 201, a relay module 202 and a single chip microcomputer 203 connected with the relay module 202, the ADC acquisition end of the ADC acquisition module 201 is respectively connected with the source electrodes S of the high-voltage power device DUT1 and DUT2 … DUT24 to be tested and is communicated with the serial port of the PC 800, the relay control end of the relay module 202 is respectively connected with the signal control ends Sign1 and Sign1 … Sign24 of the high-voltage relays K1 and K2 … K24, and the single chip microcomputer 203 is connected with the PC 800 through a control signal line; the PC 800 is equipped with a labview data acquisition program.
The protective resistor is used for preventing overvoltage protection caused by damage of a device or a high-voltage relay, and the resistance is 100K omega; the analog voltage acquisition end of the sampling resistor is connected with the PC to form an overcurrent protection control loop, when the measured leakage current is multiplied by the resistance value of the sampling resistor to obtain a sampling voltage which is greater than a set value, the control board can turn off the corresponding high-voltage relay, and the ground end of the control end of the high-voltage relay is a digital ground and is mutually isolated from the analog ground of the high-voltage power supply, so that the influence of digital ground level fluctuation caused by overshoot of digital signals is avoided, the influence of sampled data of the analog signals is avoided, and the resistance of the sampling resistors R1-2 and R2-2 … R24-2 is 10K omega; the sampling loop voltage acquisition range is-5V-5V, so that the clamping diodes have the function of preventing the voltage at two ends of the sampling resistor from exceeding 5V, and the sampling circuit is protected, wherein the clamping diodes D1 and D2 … D24 are ESD5Z5.0T1G in model number; the type of the relay module 202 is JB-8 RG-H1Z-12V; the ADC acquisition module 201 is ADS 1256; the model of the single chip microcomputer 203 is STM32F103C8T 6.
The purpose of the moisture cover is to create a high humidity condition, the humidity being adjustable by a humidity control panel. And the test carries out corresponding operation according to the mode command. The PC is placed aside, a labview data acquisition program is stored in the PC, analog voltage of the sampling resistor is acquired, a numerical average is made every 30 minutes through an average filtering algorithm, the change condition of leakage current is detected in real time through an upper computer, and if the leakage current exceeds a certain value, a control signal is sent to the single chip microcomputer.
When the high-temperature high-humidity high-pressure reverse bias test system of the high-pressure high-power device is used for testing, three modes can be selected:
when a high-temperature mode is selected, the Bohr power supply V1 provides 0-6KV high voltage for the high-voltage relays K1 and K2 … K24, the constant-temperature heating platform 300 is connected with 220V alternating current, so that the high-voltage power devices DUT1 and DUT2 … DUT24 to be tested are in a working condition of 0-200 ℃, and the test is carried out according to the HTRB JESD22-A108F standard;
when a high-temperature high-humidity mode is selected, a Bohr power supply V1 provides 0-6KV high voltage for high-voltage relays K1 and K2 … K24, 220V alternating current is conducted between the constant-temperature heating platform 300 and the humidifier, purified water contained in the water tank 700 is conveyed to the humidifier, heating is stopped when the constant-temperature heating platform 300 reaches a set temperature, the humidifier stops atomizing when the humidity detection sensor 600 detects that the humidity in the humidity hood 500 reaches the set humidity, the high-voltage power devices to be tested DUT1 and DUT2 … DUT24 are in the working conditions of 0-120 ℃ and 0-98% RH, and testing is carried out according to the HV-H3TRB ECPE Guiiline PSRRA 01 standard;
when a high-temperature salt spray mode is selected, a Bohr power supply V1 provides 0-6KV high voltage for high-voltage relays K1 and K2 … K24, the constant-temperature heating platform 300 and the humidifier are connected with 220V alternating current, NaCl solution with the pH value of 6.5-7.2 is contained in the water tank 700 and is conveyed to the humidifier, heating is stopped when the constant-temperature heating platform 300 reaches a set temperature, and when the humidity detection sensor 600 detects that the humidity in the humidity hood 500 reaches the set humidity, the humidifier stops atomizing, so that high-voltage power devices to be tested DUT1 and DUT2 … DUT24 are in a salt spray working condition with the temperature of 0-120 ℃ and the humidity of 0-98% RH, and testing is carried out according to the SACT (analog Power MIL-STD-883J METHOD 1009.8 standard.
The present invention provides a high temperature, high humidity, high pressure reverse bias test system and test method for high pressure high power semiconductor device, which is not limited to MOSFET, and is also applicable to high temperature, high humidity, high pressure reverse bias test for other types and other packaged power semiconductor devices, the test branches included in the test system include but are not limited to 24 branches, the above embodiments are only used to illustrate the technical solution of the present invention, but not to limit it, it should be understood by those skilled in the art that the specific embodiments of the present invention can be modified or substituted with equivalents with reference to the above embodiments, and any modification or equivalent substitution that does not depart from the spirit and scope of the present invention is within the protection scope of the appended claims.
Claims (3)
1. The utility model provides a high temperature high humidity high pressure reverse bias test system of high-pressure high-power device which characterized in that: the device comprises a Bohr power supply (V1), a circuit board (100), a control panel (200) and a constant-temperature heating platform (300), wherein a fixing plate (400) of a high-voltage power device to be tested is fixedly arranged above the constant-temperature heating platform (300), a humidity cover (500) covering the fixing plate (400) of the device to be tested is arranged above the fixing plate (400), the humidity cover (500) can be opened and closed, a humidity detection sensor (600) is arranged in the humidity cover, purified water or salt water is contained in a water tank (700) and a humidifier is arranged in the water tank, and mist or salt mist generated by the humidifier can be conveyed into the humidity cover (500) through a pipeline; the circuit board (100) is formed by connecting N test branches in parallel, each test branch comprises a high-voltage relay (K1, K2 … KN), a protection resistor (R1-1, R2-1 … RN-1), a sampling resistor (R1-2, R2-2 … RN-2) and a clamping diode (D1, D2 … DN), the working end of each high-voltage relay (K1, K2 … KN) is connected with the positive end of the Bohr power supply (V1), the other end of each high-voltage relay (K1, K2 … KN) is connected with the drain (D) of a high-voltage power device to be tested (DUT 9, 2 … DUTN) through the protection resistors (R1-1, R2-1 … RN-1), the source (S) of the high-voltage power device to be tested (DUT 1, 2 … DUTN) is connected with the negative end of the Bohr power supply (V1) through the sampling resistors (R1-2, R2-2 RN-2) and the negative clamping diode (D72D-72D) are connected with the Bohr power supply (DUT) through the protection resistors (V1, the negative end of the Bohr power device to be tested, D2 … DN) is connected with the grid (G) of the high-voltage power device (DUT 1, DUT2 … DUTN) to be tested, and the negative end of the high-voltage power device is connected with the negative end of the Bohr power supply (V1); the control panel (200) comprises an ADC (analog to digital converter) acquisition module (201), a relay module (202) and a single chip microcomputer (203) connected with the relay module (202), the ADC acquisition end of the ADC acquisition module (201) is respectively connected with the source electrodes (S) of the high-voltage power devices (DUT 1 and DUT2 … DUTN) to be tested and is in serial communication with a PC (800), the relay control end of the relay module (202) is respectively connected with the signal control ends (Sign 1 and Sign1 … Sign N) of the high-voltage relays (K1 and K2 … KN), and the single chip microcomputer (203) is connected with the PC (800) through a control signal line; the PC (800) is provided with a labview data acquisition program.
2. The high temperature, high humidity and high pressure reverse bias test system of the high voltage high power device according to claim 1, characterized in that: the resistance of the protection resistors (R1-1 and R2-1 … RN-1) is 100K omega, and the resistance of the sampling resistors (R1-2 and R2-2 … RN-2) is 10K omega; the clamping diodes (D1, D2 … DN) are ESD5Z5.0T1G in model; the type of the relay module (202) is JB-8 RG-H1Z-12V; the ADC acquisition module (201) is ADS 1256; the type of the single chip microcomputer (203) is STM32F103C8T 6.
3. The test method of the high temperature, high humidity and high pressure reverse bias test system of the high voltage high power device of claim 1 or 2, characterized in that: three modes can be selected:
when a high-temperature mode is selected, a Bohr power supply (V1) provides high voltage of 0-6KV for a high-voltage relay (K1, K2 … KN), a constant-temperature heating platform (300) is connected with 220V alternating current, so that high-voltage power devices (DUT 1, DUT2 … DUTN) to be tested are in a working condition of 0-200 ℃, and testing is carried out according to HTRB JESD22-A108F standard;
when a high-temperature high-humidity mode is selected, a Bohr power supply (V1) provides 0-6KV high voltage for high-voltage relays (K1 and K2 … KN), a constant-temperature heating platform (300) and a humidifier are connected with 220V alternating current, purified water contained in a water tank (700) is conveyed to the humidifier, heating is stopped when the constant-temperature heating platform (300) reaches a set temperature, atomization of the humidifier is stopped when a humidity detection sensor (600) detects that the humidity in a humidity hood (500) reaches the set humidity, high-voltage power devices (DUT 1 and DUT2 … DUTN) to be tested are made to be in the working conditions of 0-120 ℃ and 0-98% RH, and testing is carried out according to the HV-H3TRB ECPE Guiling PSRRA 01 standard;
when a high-temperature salt spray mode is selected, a Bohr power supply (V1) provides 0-6KV high voltage for a high-voltage relay (K1, K2 … KN), a constant-temperature heating platform (300) and a humidifier are connected with 220V alternating current, NaCl solution with pH of 6.5-7.2 is contained in a water tank (700) and is conveyed to the humidifier, heating is stopped when the constant-temperature heating platform (300) reaches a set temperature, and atomization of the humidifier is stopped when a humidity detection sensor (600) detects that the humidity in a humidity hood (500) reaches the set humidity, so that high-voltage power devices (DUT 1, DUT2 … DUTN) to be tested are in a salt spray working condition with the temperature of 0-120 ℃ and the humidity of 0-98% RH, and testing is carried out according to the standard of SACT ATMOS PHERE MIL-STD-883J METHOD 1009.8.
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| CN117538718A (en) * | 2023-12-27 | 2024-02-09 | 杭州高坤电子科技有限公司 | High-temperature high-humidity reverse bias test method, system, equipment and storage medium |
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