CN104316857A - IGBT thermal fatigue test system - Google Patents
IGBT thermal fatigue test system Download PDFInfo
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- CN104316857A CN104316857A CN201410602370.2A CN201410602370A CN104316857A CN 104316857 A CN104316857 A CN 104316857A CN 201410602370 A CN201410602370 A CN 201410602370A CN 104316857 A CN104316857 A CN 104316857A
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Abstract
An IGBT thermal fatigue test system is a test system which is designed to be achieved based on the combination of the embedded technological field and microelectronics reliability tests. According to the IGBT thermal fatigue test system, an ARM Cortex-M3 is used as a main CPU to control an external DA conversion circuit, an AD conversion circuit, a multi-channel temperature collecting circuit and a multi-channel relay switching circuit. The IGBT thermal fatigue test system is externally connected with a twelve-bit high-precision three-wire DAC 7512, the grid voltage of an IGBT is controlled, and a sampling value is fed into an AD conversion module through a multicircuit relay selecting circuit. According to the temperature characteristics of the IGBT, the grid voltage is higher, the current between a collector electrode and an emitting electrode is larger, and the temperature is higher. A PID incremental algorithm is used for adjusting the grid voltage of the IGBT, so that the constant power and constant temperature state is obtained, and the demand of device reliability test design is met. The IGBT thermal fatigue test system is based on a muC/OS-II embedded real-time operation system, and integrates the functions of multiple-sensor data collecting, PID algorithm control, alarm setting and the like.
Description
Technical field:
The present invention is a kind of test macro combined based on embedded and microelectronics reliability engineering, for completing the test of IGBT heat fatigue.Belong to embedded measurement technical field, be applicable to device reliability analysis field, aerospace field, high power device life prediction etc.
Background technology:
IGBT has that switching speed is fast, input impedance is high, driving circuit is simple and the advantage such as current capacity is strong, has now been widely used in the key areas such as traffic, metallurgy, generation of electricity by new energy and Aero-Space.As core devices, the long-term work under high temperature high power of IGBT power model can produce fatigue failure, may cause system outage, and therefore this module reliability of operation problem is day by day serious.Current people improve IGBT device reliability of operation by the method changing device layout and technique mostly, but along with the development of technology is with ripe, traditional method is more and more subject to the restriction of cost, owing to lacking the information that IGBT power model lost efficacy, cannot the generation of fundamentally averting a calamity property fault.The present invention design IGBT heat fatigue test macro can allow device under high temperature high power periodic duty until device produce fatigue failure, faster devices is aging, acquisition device lost efficacy time raw data, provide the reliable foundation of device for IC designs.
Therefore, design a kind of IGBT heat fatigue test macro of analysis device reliability, there is important theoretical and practical significance.
Summary of the invention:
For the integrity problem of current semiconductor devices, invent a kind of IGBT heat fatigue test macro, this system supports that 8 devices are tested simultaneously, device carries out periodic duty respectively when constant temperature, invariable power, warranty test efficient the carrying out of safety, thus reach the object of predicting reliability.
The present invention adopts following technical scheme:
IGBT heat fatigue test system hardware structure comprises: microprocessor 101, system power supply power supply 102, liquid crystal display circuit 103, A/D convertor circuit 104, DA change-over circuit 105, multiplex temperature collection circuit 106, multicircuit relay commutation circuit 107, signal amplification circuit 108, tested module 109; System power supply power supply 102 and microprocessor 101 are connected to whole system and power; Tested module 109 is connected with multicircuit relay commutation circuit 107, and the output terminal of multicircuit relay commutation circuit 107 is connected to A/D convertor circuit 104, and the output terminal of A/D convertor circuit 104 is connected to microprocessor 101; Microprocessor 101 is connected with the DA change-over circuit 105 of control-grid voltage, and the output terminal of DA change-over circuit 105 is connected to signal amplification circuit 108, and the output valve of signal amplification circuit 108 sends into tested module 109; Microprocessor 101 is connected with multiplex temperature collection circuit 106, and multiplex temperature collection circuit 106 is connected for probe temperature with tested module 109; Liquid crystal display circuit 103 for showing detecting information is connected with microprocessor 101.Described microprocessor 101 adopts STM32F103ZER6 single-chip microcomputer.
DAC7512 chip selected by DA change-over circuit 105,12 precision, and DBV (R-PDSO-G6) encapsulates.
Multiplex temperature collection circuit 106 have employed DS18B20 as temperature sensor, and precision is adjustable.
System power supply power supply 102, inner employing DC/DC power module, for system provides 5V/3.3V/ ± 12V supply voltage, be DA change-over circuit 105, A/D convertor circuit 104, liquid crystal display circuit 103 and tested module 109 are powered.
Multicircuit relay commutation circuit 107 have employed 8 Omron relay G6S2-12VDC as change-over switch, the data time sharing transmissions on control bus.
Tested module 109 selects the IRGP50B device of American I R company as test chip.
Liquid crystal display circuit 103 selects TFTLCD LCDs, resolution 320*240.
Microprocessor 101 selects STM32F103ZER6 as control chip, can programme online, uses the FLASH of 512KByte in sheet as program storage, and integrated multiple ADC12 module, realize the conversion of signal imitation to numeral.
The microprocessor STM32F103 that internal hardware resources is enriched by the present invention as control core, and extends out the important hardware modules such as voltage protection circuit, current protecting circuit, temperature measurement circuit, multichannel D/A change-over circuit 105.μ C/OS-II embedded real-time operating system realizes multi-job operation, realize 8 tunnel IGBT device to test simultaneously, adopt the grid voltage of the method adjustment measured device of automatic adjusting pid parameter, thus the shell temperature of accurate adjustment IGBT device, prevent overcurrent and excess temperature.Can need to carry out Function Extension, on-line debugging to circuit according to practical application, the mission life of prediction IGBT device, enriched the function of IGBT heat fatigue test macro, range of application is more wide.
Accompanying drawing explanation
Fig. 1: IGBT heat fatigue test system structure schematic diagram of the present invention;
Fig. 2: DA change-over circuit 105 structural representation of the present invention;
Fig. 3: IGBT heat fatigue testing system software structural representation of the present invention;
In figure: 101, microprocessor, 102, system power supply power supply, 103, liquid crystal display circuit, 104, A/D convertor circuit, 105, DA change-over circuit, 106, multiplex temperature collection circuit, 107, multicircuit relay commutation circuit, 108, signal amplification circuit, 109, tested module.
Embodiment
The invention provides a kind of IGBT heat fatigue test macro based on μ C/OS-II operating system, coordinate monitoring and regulation and control two aspects using ARM microprocessor as control core, require that system reaches high precision, high stability.As shown in Figure 1, system power supply power supply 102 provides ± 12V/5V/3.3V input voltage to hardware configuration provided by the invention, and ± 12V powers to DA change-over circuit 105, A/D convertor circuit 104, tested module 109; 3.3V voltage is to multiplex temperature collection circuit 106; 5V input voltage is powered to DA change-over circuit 105.
IGBT heat fatigue test macro is controlled by microprocessor 101, the STM32F107ZET6 chip of the ARM cortex M3 kernel that it adopts.The analog quantity that DA change-over circuit 105 exports provides grid voltage to after signal amplification circuit 108 tested module 109, and grid pressure is larger, and temperature is higher, and electric current is also larger, uses ADC in its sheet gather voltage signal and carry out data processing; A/D convertor circuit 104 gathers current signal, and tested module 109 is by multicircuit relay commutation circuit 107 switched voltage and electric current respectively.
IGBT heat fatigue test macro designed by the present invention adopts the DAC of 12, as shown in Figure 2: the DA chip of 12 exports: 0 to 5V magnitude of voltage; System adopts PID increasable algorithm, and it is one of major technique in Industry Control, and Rule adjusting is ratio, integration, differential control.Adopt this algorithm to adjust the output of DAC7512, after signal amplification circuit OP07 amplifies, be loaded into the grid of IGBT.IGBT emitter current change in test process, the voltage of the sampling resistor R3 that this electric current flows through also can change, and the analog quantity that A/D convertor circuit 104 will collect contrasts with the result of last time.If current value exceedes setting value, microprocessor 101 can by the output valve of pid algorithm adjustment DA change-over circuit 105; The value collected is sent in liquid crystal display circuit 103 by A/D convertor circuit 104, and user just can real-time monitor the situation of change of each IGBT.
Microprocessor 101 controls multiplex temperature collection circuit 106, and temperature sensor DS18B20 is close together by test fixture and tested module 109, and the value that microprocessor 101 collects shows on liquid crystal display circuit 103.
The all control program of this system is all stored in the FLASH memory of microprocessor 101 inside, and the software configuration schematic diagram of system is as Fig. 3: comprise 8 test main task, temperature acquisition task, liquid crystal display task, PID control program, man-machine interface program and state control tasks compositions.Software systems according to modular design method, the multiple task of top-down division and function program.System after the power-up, need to carry out necessary software and hardware initial work, as processor clock initialization, interrupt source configuration, each hardware module initialization etc., enter into system master routine after software and hardware initialization, in order to complete foundation and the maintenance of subsequent software module.For the test of single channel IGBT heat fatigue, first need to set up independent test main task, perform an action for complete in test process all.Meanwhile, for realizing the Real-Time Monitoring to IGBT grid voltage and collector current, in the main task that every drive test tries, overcurrent-overvoltage, overheat protector program is turn increased, to protect IGBT device; For guaranteeing that test phase automatically switches in time, needing to set up state control task, changing the duty of switch test main task in time, trigger and perform an action accordingly, complete testing process; In test process, need to call temperature acquisition task according to fixed time interval and gather IGBT device case temperature, the temperature information collected, as a parameter of PID control program, completes constant temperature test in testing process, therefore needs to set up independently temperature acquisition task; User-interface design UI function is mainly reflected in liquid crystal panel display, need to set up liquid crystal display task, the information of time display current I GBT heat fatigue test process, simultaneously, when needs warning message, liquid crystal display task ejects prompting frame, and in order to point out user, abnormal occurrence appears in system.PID control program, adopts 2 sections of PID increasable algorithm to adjust grid voltage, and first paragraph pid algorithm is mainly used in control system and produces steady current, to reach firm power; Second segment pid algorithm is mainly used in control system steady temperature.Man-machine interface program provides the realization of concrete Presentation Function for liquid crystal display task, and provides the functional realiey such as font pattern coding, decoding, key information acquisition.
System software realizes based on μ C/OS-II, add real-time and the operability of system, utilize the multitask that μ C/OS-II task management function is set up, can run on a processor simultaneously, reach multichannel IGBT thermal fatigue test to perform with walking abreast timesharing, to improve testing efficiency.
Claims (8)
1.IGBT heat fatigue test macro, is characterized in that: hardware configuration provided by the invention comprises: microprocessor (101), system power supply power supply (102), liquid crystal display circuit (103), A/D convertor circuit (104), DA change-over circuit (105), multiplex temperature collection circuit (106), multicircuit relay commutation circuit (107), signal amplification circuit (108), tested module (109); System power supply power supply (102) and microprocessor (101) are connected to whole system and power; Tested module (109) is connected with multicircuit relay commutation circuit (107), the output terminal of multicircuit relay commutation circuit (107) is connected to A/D convertor circuit (104), and the output terminal of A/D convertor circuit (104) is connected to microprocessor (101); Microprocessor (101) is connected with the DA change-over circuit (105) of control-grid voltage, the output terminal of DA change-over circuit (105) is connected to signal amplification circuit (108), and the output valve of signal amplification circuit (108) sends into tested module (109); Microprocessor (101) is connected with multiplex temperature collection circuit (106), and multiplex temperature collection circuit (106) is connected for probe temperature with tested module (109); Liquid crystal display circuit (103) for showing detecting information is connected with microprocessor (101).Described microprocessor (101) adopts STM32F103ZER6 single-chip microcomputer.
2. IGBT heat fatigue test macro according to claim 1, it is characterized in that: DAC7512 chip selected by DA change-over circuit (105), 12 precision, DBV R-PDSO-G6 encapsulates.
3. IGBT heat fatigue test macro according to claim 1, is characterized in that: multiplex temperature collection circuit (106) have employed DS18B20 as temperature sensor, and precision is adjustable.
4. IGBT heat fatigue test macro according to claim 1, it is characterized in that: system power supply power supply (102), inner employing DC/DC power module, for system provides 5V/3.3V/ ± 12V supply voltage, for DA change-over circuit (105), A/D convertor circuit (104), liquid crystal display circuit (103) and tested module (109) are powered.
5. IGBT heat fatigue test macro according to claim 1, is characterized in that: multicircuit relay commutation circuit (107) have employed 8 Omron relay G6S2-12VDC as change-over switch, the data time sharing transmissions on control bus.
6. IGBT heat fatigue test macro according to claim 1, is characterized in that: tested module (109) selects the IRGP50B of American I R company as test chip.
7. IGBT heat fatigue test macro according to claim 1, is characterized in that: liquid crystal display circuit (103) selects TFTLCD LCDs, resolution 320*240.
8. IGBT heat fatigue test macro according to claim 1, it is characterized in that: microprocessor (101) selects STM32F103ZER6 as control chip, can programme online, use the FLASH of 512KByte in sheet as program storage, and integrated multiple ADC12 module, realize the conversion of signal imitation to numeral.
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| CN201410602370.2A CN104316857A (en) | 2014-10-31 | 2014-10-31 | IGBT thermal fatigue test system |
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Cited By (3)
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| CN105425072A (en) * | 2015-11-30 | 2016-03-23 | 北京赛思亿电气科技有限公司 | Testing circuit and testing method for temperature rise of IGBT module of frequency converter |
| CN105929316A (en) * | 2016-07-10 | 2016-09-07 | 北京工业大学 | Multi-path IGBT junction temperature and thermal fatigue real-time monitoring system |
| CN106353665A (en) * | 2016-08-29 | 2017-01-25 | 河北工业大学 | IGBT (insulated gate bipolar transistor) transient heat characteristic testing device and operation method thereof |
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| CN105425072A (en) * | 2015-11-30 | 2016-03-23 | 北京赛思亿电气科技有限公司 | Testing circuit and testing method for temperature rise of IGBT module of frequency converter |
| CN105929316A (en) * | 2016-07-10 | 2016-09-07 | 北京工业大学 | Multi-path IGBT junction temperature and thermal fatigue real-time monitoring system |
| CN106353665A (en) * | 2016-08-29 | 2017-01-25 | 河北工业大学 | IGBT (insulated gate bipolar transistor) transient heat characteristic testing device and operation method thereof |
| CN106353665B (en) * | 2016-08-29 | 2019-12-06 | 河北工业大学 | IGBT transient thermal characteristic testing device and operation method thereof |
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Application publication date: 20150128 |
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