CN104155587B - System and method for on-line detection of operating junction temperature of IGBT module - Google Patents
System and method for on-line detection of operating junction temperature of IGBT module Download PDFInfo
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- CN104155587B CN104155587B CN201410345265.5A CN201410345265A CN104155587B CN 104155587 B CN104155587 B CN 104155587B CN 201410345265 A CN201410345265 A CN 201410345265A CN 104155587 B CN104155587 B CN 104155587B
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Abstract
The invention discloses a system and a method for on-line detection of operating junction temperature of an IGBT module. Under an actually continuous on and off switching operate states of the IGBT module, changeable drive current and collector current generate induced voltage on stray inductance of the IGBT module; the induced voltage occurs twice voltage changes during turn-off, and the interval is recorded as the temperature-sensitive time which is closely related to the operating junction temperature of the IGBT module under a regular voltage and current turn-off condition. According to the system and the method, an IGBT test system is established to extract the temperature-sensitive time at different DC bus voltages, IGBT conducting currents and operating junction temperatures so as to establish an off-line reference database, voltage between a driving emitting electrode and a power emitting electrode of the IGBT module are monitored during the actual operation of an IGBT, and the temperature-sensitive time is extracted to calculate junction temperature on line. Compared with the conventional technology for monitoring the operating junction temperature of the IGBT, the method provided by the invention has higher real-time performance and integration.
Description
Technical field
The invention belongs to power electronic devices detection technique field, and in particular to a kind of IGBT module working junction temperature it is online
Detecting system and detection method.
Background technology
Power converter of the working junction temperature of IGBT module in industrial such as flexible DC power transmission and wind generator system
In be an important parameter, it provides the relevant information of IGBT module thermal stress and hot property, therefore, its working junction temperature can
For carrying out status monitoring, IGBT module reliability, prediction remaining life and analysis failure mechanism are assessed.
Conventional IGBT module working junction temperature detection method, such as hot sensing method, i.e., put near IGBT module inside chip
Heat sensor is put, the method needs the encapsulation for opening IGBT module to place heat sensor；Thermal imaging method, i.e., using infrared radiation thermometer
The distribution situation of measurement IGBT module junction temperature, but unencapsulated exposed die can only be measured, for the module of encapsulating structure needs
Module encapsulation is opened, and test instrunment is expensive.
Thermal self-ignition, that is, measure the temperature of IGBT module substrate, and can be predicted by the thermal resistance network of IGBT module
Internal IGBT module working junction temperature, the method needs the heat conduction path to IGBT module and thermal resistance network measurement to have high-resolution
Rate and degree of accuracy, because temperature conduction has time delay to IGBT module substrate at IGBT module chip, the technology is not applied to
With the on-line monitoring of IGBT module working junction temperature.
On the whole, above IGBT module working junction temperature monitoring technology, or measuring instrument is expensive, or for IGBT module envelope
Harness it is in need open encapsulating structure particular/special requirement, or junction temperature monitoring have certain delay, be not suitable for IGBT module work
The on-line monitoring of junction temperature.
In addition, the behavior of IGBT module and its working junction temperature have it is close contact, this is due to Semiconductor Physics ginseng
Number such as carrier concentration, carrier mobility and temperature has stronger coupled relation, and the electrical characteristic of IGBT module depends on
There is provided for the working junction temperature monitoring of IGBT module in above-described Semiconductor Physics parameter, therefore the temperature sensitive electric parameter of IGBT
Probability, such as threshold voltage, conduction voltage drop opens electric current maximum rate of change and shut-off voltage change ratio etc.；Threshold voltage is
The minimum driving voltage that IGBT module MOS raceway groove is opened under by monitoring different temperatures is right with working junction temperature using the voltage
Determination IGBT module working junction temperature should be related to, but the parameter is low with temperature-sensitivity coefficient, and extract more difficult；Conduction voltage drop is
The forward voltage drop of IGBT under measurement different temperatures, determines that IGBT works using the corresponding relation of forward drop and working junction temperature
Junction temperature, but the detection of conduction voltage drop needs the sensor of high withstand voltage, and under the switching context of high-voltage great-current, tested
Conduction voltage drop value very little, is highly susceptible to interference；The pass for opening the power tube for being usually associated with the change of current therewith of IGBT module
Disconnected, in the circuit of two level inductive load types, when IGBT module is opened, load current is from the diode change of current to big IGBT moulds
During block, the reverse recovery current of diode can flow through IGBT module, therefore the electric current of opening of IGBT module contains diode
Reverse recovery current, is not exclusively the characteristic of IGBT module itself；The detection of shut-off voltage change ratio is needed by extra nothing
Source device (such as electric capacity) is changed into and is easy to signal measured directly, and the addition of passive device have impact on the work shape of IGBT module
State.
The content of the invention
For the above-mentioned technical problem existing for prior art, the invention provides a kind of IGBT module working junction temperature
Line detecting system and detection method, can be with higher degree of accuracy and the working junction temperature of resolution real-time detection IGBT module.
A kind of on-line detecting system of IGBT module working junction temperature, including：
Main circuit unit, is connected with IGBT module；Described main circuit unit includes direct voltage source V, electric capacity C, inductance L
With power diode D；Wherein, one end of the positive pole of direct voltage source V and electric capacity C, one end of inductance L and power diode D
Negative electrode is connected, and the other end of inductance L is connected with the anode of power diode D and the colelctor electrode of IGBT module, the work(of IGBT module
Rate emitter stage is connected with the negative pole of direct voltage source V and the other end of electric capacity C；
Temperature conditioning unit, for regulating and controlling the ambient temperature of IGBT module；
Sampling unit, for gathering electric capacity C between the transient process for being switched to off state by conducting state in IGBT module
The DC bus-bar voltage V at two endsdcWith conducting electric current I of IGBT modulec；
Driver element, for the base stage for IGBT module switch controlling signal is provided, to control IGBT module by turning on shape
State switches to off state, and then regulates and controls conducting electric current I of IGBT modulec；
Junction temperature detector unit, for gathering the power emitter and the voltage signal for driving emitter stage two ends of IGBT module
VEe, extract voltage signal VEeTemperature sensitive time t in IGBT module turn off process twice between change in voltaged-eE；Described knot
Temperature detector surveys element memory to be had under various operating conditions with regard to DC bus-bar voltage Vdc, IGBT module conducting electric current Ic, IGBT moulds
The working junction temperature T of blockjAnd temperature sensitive time td-eEData form and function model；And then according to IGBT module by turning on shape
State switches to the DC bus-bar voltage V between the transient process of off statedc, IGBT module conducting electric current IcAnd the temperature sensitive time
td-eE, by tabling look-up or function model is calculated the working junction temperature T of IGBT modulej。
Described junction temperature detector unit includes：
Voltage trapping module, for capturing the power emitter of IGBT module and driving emitter stage two ends in turn off process
Voltage signal VEe；
Isolation module, for voltage signal VEeCarry out isolation conversion；
Comparison module, for the voltage signal V after changing isolationEeIt is compared with given threshold voltage, generates tool
Have and voltage signal VEeThe pulse signal of two corresponding subpulses of change；
Timing measuring module, for measuring described pulse signal in temperature sensitive time t between two subpulsesd-eE；
Junction temperature computing module, has under various operating conditions with regard to DC bus-bar voltage V inside itdc, IGBT module leads
Galvanization Ic, IGBT module working junction temperature TjAnd temperature sensitive time td-eEData form and function model, and then basis
IGBT module is switched to the DC bus-bar voltage V between the transient process of off state by conducting statedc, IGBT module electric conduction
Stream IcAnd temperature sensitive time td-eE, by tabling look-up or function model is calculated the working junction temperature T of IGBT modulej。
Described voltage trapping module includes three resistance R1～R3, operational amplifier U1 and bilateral analog switch H；Its
In：One end of resistance R1 receives the switch controlling signal of IGBT module base stage, the one end and operation amplifier of the other end with resistance R3
The inverting input of device U1 is connected；The one termination IGBT module of resistance R2 drives the voltage of emitter stage, the other end and operation amplifier
The normal phase input end of device U1 is connected；The control of the other end of resistance R3 and the outfan of operational amplifier U1 and bilateral analog switch H
End processed is connected, the voltage of the input termination IGBT module power emitter of bilateral analog switch H, the output of bilateral analog switch H
End output voltage signal VEe。
Described isolation module includes the linear optical coupling P1 of three operational amplifier U2～U4, two models HCNR201
～P2, three electric capacity C1～C3, D1～D2 and five resistance R4～R8 of two diodes；Wherein：One end of resistance R4 and resistance
One end of R5 is connected and receiving voltage signal VEe, the other end of resistance R4 and one end of electric capacity C1, the negative electrode of diode D1, computing
The inverting input of amplifier U2 is connected with No. 3 pins of linear optical coupling P1, the normal phase input end of operational amplifier U2 with it is linear
No. 2 pins of optocoupler P1, No. 4 pins of linear optical coupling P1, No. 1 pin of linear optical coupling P2, No. 3 pins of linear optical coupling P2 and
The normal phase input end of operational amplifier U3 be connected and connect IGBT module drive emitter stage voltage, the outfan of operational amplifier U2
One end of the other end, the anode of diode D1 and resistance R6 with electric capacity C1 is connected, the other end and the linear optical coupling P1 of resistance R6
No. 1 pin be connected, the other end of resistance R5 and one end of electric capacity C2, the anode of diode D2, operational amplifier U3 it is anti-phase
Input is connected with No. 4 pins of linear optical coupling P2, the outfan of operational amplifier U3 and the other end of electric capacity C2, diode D2
Negative electrode be connected with one end of resistance R7, the other end of resistance R7 is connected with No. 2 pins of linear optical coupling P2, linear optical coupling P1's
No. 5 pins are connected and are grounded with No. 6 pins of linear optical coupling P2 and the normal phase input end of operational amplifier U4, linear optical coupling P1's
No. 6 pins are anti-phase defeated with No. 5 pins of linear optical coupling P2, one end of electric capacity C3, one end of resistance R8 and operational amplifier U4's
Enter end to be connected, the outfan of operational amplifier U4 is connected and for isolation module with the other end of the other end of electric capacity C3 and resistance R8
Outfan.
Described comparison module include two operational amplifier U5～U6, two comparator B1～B2, seven resistance R9～
R15 and with door K；Wherein：One end of resistance R9 be connected with one end of resistance R10 and receive isolate conversion after voltage signal VEe,
The other end of resistance R9 is connected with one end of resistance R11 and the inverting input of operational amplifier U5, the other end of resistance R10 with
One end of resistance R14, the inverting input of operational amplifier U6 are connected with the outfan of operational amplifier U6, operational amplifier U5
Normal phase input end and the normal phase input end of operational amplifier U6 be grounded, the other end of resistance R11 is with operational amplifier U5's
Outfan is connected with one end of resistance R12, and the other end of resistance R12 is connected with the inverting input of comparator B1, comparator B1
Normal phase input end be connected with one end of resistance R13, another termination threshold V T 1 of resistance R13, the other end of resistance R14
It is connected with the inverting input of comparator B2, the normal phase input end of comparator B2 is connected with one end of resistance R15, resistance R15's
Another termination threshold V T 2, the outfan of comparator B1 and B2 respectively with the first input end with door K and the second input phase
Even, the pulse signal described with the outfan output of door K.
Described timing measuring module and junction temperature computing module can be realized by FPGA (field programmable gate array).
For the ease of realizing the on-line checking of IGBT module working junction temperature, junction temperature detector unit can be with integrated with driver element
Together.
The detection method of above-mentioned on-line detecting system, comprises the steps：
(1) data model is set up；
Set under conditions of less than IGBT module maximum working voltage, maximum operating currenbt and maximum functional junction temperature
Operating condition；For arbitrary operating condition, switched to by conducting state between the transient process of off state in IGBT module, its is right
One group is answered with regard to DC bus-bar voltage Vdc, IGBT module conducting electric current IcWith the working junction temperature T of IGBT modulejData, adopt
The collection power emitter of IGBT module and the voltage signal V for driving emitter stage two ends under the operating conditionEe, and extract voltage letter
Number VEeTemperature sensitive time t in IGBT module turn off process twice between change in voltaged-eE；
All operating conditions are traveled through according to this, obtain the corresponding temperature sensitive time t of each operating conditiond-eE；And then set up each fortune
With regard to DC bus-bar voltage V under row operating modedc, IGBT module conducting electric current Ic, IGBT module working junction temperature TjAnd it is temperature sensitive
Time td-eEData form and function model；
(2) on-line checking；
The power emitter of collection IGBT module and the voltage signal V for driving emitter stage two endsEe, and extract voltage signal
VEeTemperature sensitive time t in IGBT module turn off process twice between change in voltaged-eE；Simultaneously in IGBT module by conducting state
Switch to collection DC bus-bar voltage V between the transient process of off statedcAnd conducting electric current I of IGBT modulec；
The DC bus-bar voltage V between the transient process of off state is further switched to by conducting state according to IGBT moduledc、
Conducting electric current I of IGBT modulecAnd temperature sensitive time td-eE, by tabling look-up or function model is calculated the work of IGBT module
Junction temperature Tj。
The present invention utilizes high-power IGBT module temperature sensitive time t in turn off processd-eEChange have with its working junction temperature
Strong coupled relation, temperature sensitive time td-eELinear relationship, temperature sensitive time t are approximately with the working junction temperature of IGBT moduled-eEBy driving
The voltage V produced between dynamic emitter e and power emitter EEeChange is extracted, and has been passed through IGBT module and has been driven emitter e
Between power emitter E in turn off process produce voltage VEeChange can extract out temperature sensitive time td-eE, further determine that
The working junction temperature of IGBT module.Because IGBT module drives voltage ratio between emitter e and power emitter E relatively low, therefore this
The bright voltage for using a low pressure and time interval detection circuit just can be by temperature sensitive time td-eEMeasure, and the method
And system does not need the passive auxiliary element of extra high pressure, and detecting system is easy to integrated with driver element, does not affect IGBT moulds
The original working condition of block, with preferable real-time and integration.
Description of the drawings
Fig. 1 is the structural representation of Online Transaction Processing of the present invention.
Fig. 2 is the structural representation of junction temperature detector unit.
Fig. 3 is the structural representation of voltage trapping module.
Fig. 4 is the structural representation of isolation module.
Fig. 5 is the structural representation of comparison module.
Fig. 6 is the sequential chart of each test signal of present system；Wherein, VgFor the base control signal of IGBT module, ILFor
Electric current on inductance L, VcAnd IcThe respectively voltage and current of IGBT module.
Fig. 7 is voltage signal VEeThe waveform diagram for changing twice.
Fig. 8 is voltage signal V under different operating junction temperatureEeWaveform diagram.
Fig. 9 is temperature sensitive time td-eEWith the schematic diagram that IGBT module working junction temperature changes.
Figure 10 is temperature sensitive time td-eEWith the three-dimensional data schematic diagram that IGBT module voltage x current changes.
Specific embodiment
In order to more specifically describe the present invention, below in conjunction with the accompanying drawings and specific embodiment is to technical scheme
It is described in detail.
The circuit structure of the IGBT module working junction temperature Online Transaction Processing of inductive load shown in Fig. 1.Test system
Including temperature conditioning unit, driver element, sampling unit, DC source V, DC capacitor group C, load inductance L, high-power IGBT mould
Block, heavy-duty diode module D and junction temperature detector unit, wherein：The negative electrode of power diode tube module D and DC capacitor group C
Positive pole is connected with the positive pole of DC source V, one end of load inductance L and the power collector terminal phase of high-power IGBT module
Even, the other end is connected with the negative electrode of the positive pole, the positive pole of DC source V and diode module D of DC capacitor group C, high-power
The power emission of IGBT module is extremely connected with the negative pole of DC capacitor group C and the negative pole of DC source V, driver element connection
To the base terminal and driving emitter terminal of high-power IGBT module, junction temperature detector unit is connected to the power of high-power IGBT module
Emitter terminal and driving emitter terminal；LeFor the stray inductance of high-power IGBT module drive emitter terminal, LEeFor high-power
Stray inductance between IGBT module power emitter and driving emitter stage.
Temperature conditioning unit is used to control the ambient temperature of IGBT module, and temperature conditioning unit be able to can also be adopted using temperature control heating plate
With thermostatically-controlled equipment (including temperature sensor, heating plate and temperature controller)；Sampling unit is gathered using voltage-current sensor
DC bus-bar voltage VdcWith conducting electric current I of IGBT modulec。
The control signal sequential that driver element provides high-power IGBT module is as shown in Figure 6；Based on above-mentioned IGBT module work
The method of testing step for making junction temperature Online Transaction Processing (is as follows with the high-power 3300V800A high-power IGBTs module of certain manufacturer
Example), the operating temperature for arranging IGBT module by temperature conditioning unit is the first rated temperature, it is assumed that the first rated temperature is 25 Celsius
Degree；Direct voltage source output is set simultaneously, to DC capacitor group the first rated voltage V1 is charged to.
(1) in t0Moment, tested high-power IGBT module is open-minded, and direct voltage source V is by high-power IGBT module to negative
Carry inductance L to be charged, the charging interval is controlled, to t1At the moment, the electric current for flowing through high-power IGBT module is risen to into the first volume
Determine electric current I1, in t1Moment, the shut-off of high-power IGBT module；In turn off process, change stray inductance L of driving currenteUpper sense
Voltage V should be gone outEe1, IGBT module power current is in stray inductance LEeOn induce voltage VEe2, therefore can drive in IGBT module
Voltage V between dynamic emitter stage and power emitterEeOn monitor the change of voltage twice, induced voltage V is corresponded to respectivelyEe1With
VEe2, temperature sensitive time t twice between induced voltage is extracted by junction temperature detector unitd-eE, Fig. 7 shows high-power IGBT
Module drives the V monitored between emitter stage and power emitter in turn off process in IGBT moduleEeVoltage waveform.
(2) ambient temperature of high-power IGBT module is set in into the second rated temperature by temperature conditioning unit, while keeping the
One rated voltage and the first nominal load current are constant, the ambient temperature that temperature conditioning unit arranges IGBT module are adjusted, from a certain temperature
Degree starts progressively to rise to highest setting temperature with certain temperature interval, and highest arranges permission of the temperature less than IGBT module
Maximum operating temperature, repeat to step (1), obtain VEeThe corresponding relation of waveform and remaining rated temperature, Fig. 8 is shown 25
DEG C, 50 DEG C, 75 DEG C, under the IGBT module working junction temperature of 100 DEG C and 125 DEG C, in IGBT module emitter stage and power emission are driven
Voltage waveform between pole；Fig. 9 shows the voltage V driven by IGBT module between emitter stage and power emitterEeBecome twice
Change the temperature sensitive time t for extractingd-eEWith the graph of a relation that working junction temperature changes.
(3) the first rated current is changed；Keep DC source V constant to the first rated voltage that DC capacitor group charges,
Control is set and driver element changes the persistent period of the first driving pulse, test electric current is started with certain from a certain current value
Current intervals progressively rise to highest test electric current, highest test electric current less than IGBT module allow highest work electricity
Stream, repeat step (1)～(2) obtain voltage waveform V between the driving emitter stage and power emitter under different test electric currentsEe
And temperature sensitive time td-eE。
(4) the first rated voltage is changed；The voltages that charge to DC capacitor group of DC source V are set, voltage is made from a certain
Magnitude of voltage starts progressively to rise to highest test voltage with certain voltage spaces, and highest test voltage permits less than IGBT module
Perhaps maximum operating voltage, repeats above step (1)～(3), you can obtain comprehensive different voltages, different electric currents, different works
Make IGBT module V under junction temperatureEeWaveform, and extract the temperature sensitive time td-eE。
(5) different voltages can be set up by said method, different electric currents, the IGBT module under different operating junction temperature drives
The temperature sensitive time t of change in voltage twice between emitter stage and power emitterd-eEReference database.In the reality of IGBT module
In work, to voltage V between high-power IGBT module drive emitter e and power emitter EEeReal-time monitoring is carried out, by knot
Warm detector unit obtains voltage VEeIn the temperature sensitive time t of change twiced-eE, and then according to DC bus-bar voltage V in actual motiondc
With conducting electric current I of IGBT modulecAnd temperature sensitive time td-eE, by reference to the information in data base, using tabling look-up or Function Modules
Type or neural network model is counter releases current IGBT module working junction temperature.Figure 10 shows what IGBT module working junction temperature was fixed
In the case of, under different busbar voltages and load current, the working junction temperature and t of IGBT moduled-eEThe three-dimensional data base of value, and will
The reference database of acquisition is integrated in the digital processing chip of junction temperature detector unit.
As shown in Fig. 2 in present embodiment junction temperature detector unit include voltage trapping module, isolation module, comparison module,
Timing measuring module and junction temperature computing module；Wherein：
Voltage trapping module is switched using controllable simulation switch according to the on off state drive signal of IGBT module to IGBT
During IGBT module drive voltage V between emitter e and power emitter EEeChosen, only obtaining should in turn off process
Partial voltage signal；As shown in figure 3, the module includes three resistance R1～R3, operational amplifier U1 and bilateral analog switch
H；Wherein：One end of resistance R1 receives the switch controlling signal of IGBT module base stage, the one end and computing of the other end with resistance R3
The inverting input of amplifier U1 is connected；The one termination IGBT module of resistance R2 drives the voltage of emitter stage, the other end and computing
The normal phase input end of amplifier U1 is connected；The other end of resistance R3 and the outfan of operational amplifier U1 and bilateral analog switch H
Control end be connected, bilateral analog switch H input termination IGBT module power emitter voltage, bilateral analog switch H's
Outfan output voltage signal VEe。
Voltage V between driving emitter e and power emitter E of the isolation module using linear optical coupling to acquisitionEeCarry out every
From conversion so that the high pressure of IGBT switch main power circuits is isolated with the low-voltage signal of junction temperature detection part；Such as Fig. 4 institutes
Show, the module includes linear optical coupling P1～P2, three electric capacity of three operational amplifier U2～U4, two models HCNR201
C1～C3, D1～D2 and five resistance R4～R8 of two diodes；Wherein：One end of resistance R4 is connected simultaneously with one end of resistance R5
Receiving voltage signal VEe, the other end of resistance R4 and one end of electric capacity C1, the negative electrode of diode D1, operational amplifier U2 it is anti-phase
Input is connected with No. 3 pins of linear optical coupling P1, and the normal phase input end of operational amplifier U2 draws with No. 2 of linear optical coupling P1
Foot, No. 4 pins of linear optical coupling P1, No. 1 pin of linear optical coupling P2, No. 3 pins of linear optical coupling P2 and operational amplifier U3
Normal phase input end be connected and connect the voltage that IGBT module drives emitter stage, the outfan of operational amplifier U2 is another with electric capacity C1
One end, the anode of diode D1 are connected with one end of resistance R6, the other end of resistance R6 and No. 1 pin phase of linear optical coupling P1
Even, the other end of resistance R5 and one end of electric capacity C2, the anode of diode D2, the inverting input of operational amplifier U3 and linear
No. 4 pins of optocoupler P2 are connected, the outfan of operational amplifier U3 and the other end of electric capacity C2, the negative electrode of diode D2 and resistance
One end of R7 is connected, and the other end of resistance R7 is connected with No. 2 pins of linear optical coupling P2, No. 5 pins of linear optical coupling P1 and line
No. 6 pins of property optocoupler P2 are connected and are grounded with the normal phase input end of operational amplifier U4, No. 6 pins of linear optical coupling P1 and line
Property No. 5 pins of optocoupler P2, one end of electric capacity C3, one end of resistance R8 be connected with the inverting input of operational amplifier U4, transport
The outfan for calculating amplifier U4 is connected and for the outfan of isolation module with the other end of electric capacity C3 and the other end of resistance R8.
Comparison module can drive emitter e and power emitter E by arranging corresponding threshold voltage, the threshold voltage
Between voltage VEeIt is compared, produces and drive voltage V between emitter e and power emitter EEeChange is corresponding twice
Pulse signal, the temperature sensitive time between the pulse signal for so producing represents electricity between driving emitter e and power emitter E
Pressure VEeChange reflection my temperature sensitive time td-eE；As shown in figure 5, the module include two operational amplifier U5～U6, two
Comparator B1～B2, seven resistance R9～R15 and with door K；Wherein：One end of resistance R9 is connected and connects with one end of resistance R10
Receive the voltage signal V after isolation conversionEe, the other end of resistance R9 and one end of resistance R11 and operational amplifier U5's is anti-phase defeated
Enter end to be connected, the other end of resistance R10 and one end of resistance R14, the inverting input of operational amplifier U6 and operational amplifier
The outfan of U6 is connected, and the normal phase input end of operational amplifier U5 and the normal phase input end of operational amplifier U6 are grounded, resistance
The other end of R11 is connected with the outfan of operational amplifier U5 and one end of resistance R12, the other end and comparator of resistance R12
The inverting input of B1 is connected, and the normal phase input end of comparator B1 is connected with one end of resistance R13, another termination of resistance R13
Threshold V T 1, the other end of resistance R14 is connected with the inverting input of comparator B2, the normal phase input end of comparator B2 with
One end of resistance R15 is connected, another termination threshold V T 2 of resistance R15, the outfan of comparator B1 and B2 respectively with door
The first input end of K and the second input are connected, the pulse signal described with the outfan output of door K.
Timing measuring module is used for the pulse signal produced according to comparing unit, measures the time interval between pulse signal
td-eE；Junction temperature computing module is used for time interval t according to produced by timing measuring moduled-eEAnd sampling unit is collected
DC bus-bar voltage VdcWith conducting electric current I of IGBT modulec, calculate the working junction temperature of IGBT module；In present embodiment this
Two modules are realized using FPGA.
Voltage trapping module adopts bilateral analog switch CD4066BCJ, the drive control signal with IGBT module to realize driving
Voltage V between dynamic emitter e and power emitter EEeGating capture, due to IGBT module drive signal be located at driver element
In, thus junction temperature detector unit can with it is integrated in the driving unit.Consider to drive voltage between emitter e and power emitter E
VEeThe positive-negative polarity of change amplitude, isolation module realizes the positive-negative polarity of voltage signal using operational amplifier U2, U3 and D2, D1
Can transmit, while using linear optical coupling P1, P2, R6, R7, R8 realizes the equivalent transmission of voltage signal.It is made up of U5 and U6
Phase inverter and follower will be converted into positive polarity by voltage signal twice, and B1, VT1 and B2, the comparator of VT2 compositions are respectively with the
The amplitude of one change in voltage is compared with the amplitude of second change in voltage, obtains the pulse letter corresponding with change in voltage
Number, can obtain the working junction temperature of IGBT using the time interval of the pulse signal.
Claims (8)
1. a kind of on-line detecting system of IGBT module working junction temperature, it is characterised in that include：
Main circuit unit, is connected with IGBT module；Described main circuit unit includes direct voltage source V, electric capacity C, inductance L and work(
Rate diode D；Wherein, the negative electrode of one end, one end of inductance L and power diode D of the positive pole of direct voltage source V and electric capacity C
It is connected, the other end of inductance L is connected with the anode of power diode D and the colelctor electrode of IGBT module, the power of IGBT module is sent out
Emitter-base bandgap grading is connected with the negative pole of direct voltage source V and the other end of electric capacity C；
Temperature conditioning unit, for regulating and controlling the ambient temperature of IGBT module；
Sampling unit, for gathering electric capacity C two ends between the transient process for being switched to off state by conducting state in IGBT module
DC bus-bar voltage VdcWith conducting electric current I of IGBT modulec；
Driver element, for the base stage for IGBT module switch controlling signal is provided, and is cut by conducting state with controlling IGBT module
Off state is shifted to, and then regulates and controls conducting electric current I of IGBT modulec；
Junction temperature detector unit, for gathering the power emitter and the voltage signal V for driving emitter stage two ends of IGBT moduleEe, carry
Take voltage signal VEeTemperature sensitive time t in IGBT module turn off process twice between change in voltaged-eE；Described junction temperature detection
Element memory has under various operating conditions with regard to DC bus-bar voltage Vdc, IGBT module conducting electric current Ic, IGBT module work
Make junction temperature TjAnd temperature sensitive time td-eEData form and function model；And then switched by conducting state according to IGBT module
To off state transient process between DC bus-bar voltage Vdc, IGBT module conducting electric current IcAnd temperature sensitive time td-eE,
By tabling look-up or function model is calculated the working junction temperature T of IGBT modulej。
2. on-line detecting system according to claim 1, it is characterised in that：Described junction temperature detector unit includes：
Voltage trapping module, for the electricity at the capture power emitter of IGBT module and driving emitter stage two ends in turn off process
Pressure signal VEe；
Isolation module, for voltage signal VEeCarry out isolation conversion；
Comparison module, for the voltage signal V after changing isolationEeBe compared with given threshold voltage, generate have with
Voltage signal VEeThe pulse signal of two corresponding subpulses of change；
Timing measuring module, for measuring described pulse signal in temperature sensitive time t between two subpulsesd-eE；
Junction temperature computing module, has under various operating conditions with regard to DC bus-bar voltage V inside itdc, IGBT module electric conduction
Stream Ic, IGBT module working junction temperature TjAnd temperature sensitive time td-eEData form and function model, and then according to IGBT moulds
Block is switched to the DC bus-bar voltage V between the transient process of off state by conducting statedc, IGBT module conducting electric current IcWith
And temperature sensitive time td-eE, by tabling look-up or function model is calculated the working junction temperature T of IGBT modulej。
3. on-line detecting system according to claim 2, it is characterised in that：Described voltage trapping module includes three electricity
Resistance R1～R3, operational amplifier U1 and bilateral analog switch H；Wherein：One end of resistance R1 receives the switch of IGBT module base stage
Control signal, the other end is connected with one end of resistance R3 and the inverting input of operational amplifier U1；One termination of resistance R2
IGBT module drives the voltage of emitter stage, the other end to be connected with the normal phase input end of operational amplifier U1；The other end of resistance R3
It is connected with the outfan of operational amplifier U1 and the control end of bilateral analog switch H, the input termination IGBT of bilateral analog switch H
The voltage of modular power emitter stage, the outfan output voltage signal V of bilateral analog switch HEe。
4. on-line detecting system according to claim 2, it is characterised in that：Described isolation module is put including three computings
Linear optical coupling P1～P2, three electric capacity C1～C3, two diode D1～D2 of big device U2～U4, two models HCNR201
With five resistance R4～R8；Wherein：One end of resistance R4 is connected and receiving voltage signal V with one end of resistance R5Ee, resistance R4's
No. 3 of one end of the other end and electric capacity C1, the negative electrode of diode D1, the inverting input of operational amplifier U2 and linear optical coupling P1
Pin is connected, the normal phase input end of operational amplifier U2 and No. 2 pins of linear optical coupling P1, No. 4 pins, the lines of linear optical coupling P1
Property No. 1 pin of optocoupler P2, No. 3 pins of linear optical coupling P2 are connected with the normal phase input end of operational amplifier U3 and connect IGBT moulds
Block drives the voltage of emitter stage, the outfan of operational amplifier U2 and the other end of electric capacity C1, the anode of diode D1 and resistance
One end of R6 is connected, and the other end of resistance R6 is connected with No. 1 pin of linear optical coupling P1, and the other end of resistance R5 is with electric capacity C2's
One end, the anode of diode D2, the inverting input of operational amplifier U3 are connected with No. 4 pins of linear optical coupling P2, and computing is put
The outfan of big device U3 is connected with one end of the other end, the negative electrode of diode D2 and resistance R7 of electric capacity C2, and resistance R7's is another
End is connected with No. 2 pins of linear optical coupling P2, and No. 5 pins of linear optical coupling P1 are put with No. 6 pins of linear optical coupling P2 and computing
The normal phase input end of big device U4 is connected and is grounded, No. 6 pins of linear optical coupling P1 and No. 5 pins, the electric capacity C3 of linear optical coupling P2
One end, one end of resistance R8 be connected with the inverting input of operational amplifier U4, the outfan and electric capacity of operational amplifier U4
The other end of C3 is connected and for the outfan of isolation module with the other end of resistance R8.
5. on-line detecting system according to claim 2, it is characterised in that：Described comparison module is put including two computings
Big device U5～U6, two comparator B1～B2, seven resistance R9～R15 and with door K；Wherein：One end of resistance R9 and resistance R10
One end be connected and receive isolation conversion after voltage signal VEe, the other end of resistance R9 puts with one end of resistance R11 and computing
The inverting input of big device U5 is connected, the other end of resistance R10 and one end of resistance R14, the anti-phase input of operational amplifier U6
End is connected with the outfan of operational amplifier U6, and the normal phase input end of operational amplifier U5 and the positive of operational amplifier U6 are input into
End is grounded, and the other end of resistance R11 is connected with one end of the outfan of operational amplifier U5 and resistance R12, and resistance R12's is another
One end is connected with the inverting input of comparator B1, and the normal phase input end of comparator B1 is connected with one end of resistance R13, resistance
Another termination threshold V T 1 of R13, the other end of resistance R14 is connected with the inverting input of comparator B2, comparator B2's
Normal phase input end is connected with one end of resistance R15, another termination threshold V T 2 of resistance R15, the output of comparator B1 and B2
End is connected respectively with the first input end with door K and the second input, the pulse signal described with the outfan output of door K.
6. on-line detecting system according to claim 2, it is characterised in that：Described timing measuring module and junction temperature is calculated
Module is realized by FPGA.
7. on-line detecting system according to claim 1, it is characterised in that：Described junction temperature detector unit and driver element
It is integrated in together.
8. a kind of on-line detecting system using as described in claim 1～7 any claim carries out IGBT module work knot
The online test method of temperature, comprises the steps：
(1) data model is set up：
The setting operation under conditions of less than IGBT module maximum working voltage, maximum operating currenbt and maximum functional junction temperature
Operating mode；For arbitrary operating condition, switched to by conducting state between the transient process of off state in IGBT module, its correspondence one
Group is with regard to DC bus-bar voltage Vdc, IGBT module conducting electric current IcWith the working junction temperature T of IGBT modulejData, collection exist
The power emitter of IGBT module and the voltage signal V for driving emitter stage two ends under the operating conditionEe, and extract voltage signal
VEeTemperature sensitive time t in IGBT module turn off process twice between change in voltaged-eE；
All operating conditions are traveled through according to this, obtain the corresponding temperature sensitive time t of each operating conditiond-eE；And then set up each operating condition
Under with regard to DC bus-bar voltage Vdc, IGBT module conducting electric current Ic, IGBT module working junction temperature TjAnd temperature sensitive time td-eE
Data form and function model；
(2) on-line checking：
The power emitter of collection IGBT module and the voltage signal V for driving emitter stage two endsEe, and extract voltage signal VEe
Temperature sensitive time t in IGBT module turn off process twice between change in voltaged-eE；Switched by conducting state in IGBT module simultaneously
To off state transient process between gather DC bus-bar voltage VdcAnd conducting electric current I of IGBT modulec；
The DC bus-bar voltage V between the transient process of off state is further switched to by conducting state according to IGBT moduledc、IGBT
Conducting electric current I of modulecAnd temperature sensitive time td-eE, by tabling look-up or function model is calculated the working junction temperature of IGBT module
Tj。
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