CN111781480B - IGBT junction temperature monitoring method, device and system - Google Patents
IGBT junction temperature monitoring method, device and system Download PDFInfo
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Abstract
The invention discloses a junction temperature monitoring method of an IGBT, which comprises the steps of controlling a calibration curve test circuit to test the tube voltage drop of the IGBT to be tested under different junction temperatures when the IGBT to be tested is arranged in the calibration curve test circuit so as to obtain a junction temperature calibration curve of the IGBT to be tested; when the IGBT to be tested is arranged in the thermal resistance testing circuit, controlling the thermal resistance testing circuit to measure the tube voltage drop of the IGBT to be tested under the preset power loss, and acquiring the junction temperature of the IGBT to be tested under the preset power loss according to the junction temperature calibration curve so as to calculate the thermal resistance of the IGBT to be tested; and in the process of putting the IGBT to be tested into actual engineering operation, calculating the real-time junction temperature of the IGBT to be tested according to the thermal resistance and the actual power loss of the IGBT to be tested. The invention also discloses a corresponding junction temperature monitoring device and a system, by adopting the invention, the junction temperature of the IGBT in the operation process can be monitored in real time under the condition of not influencing the actual engineering operation condition of the IGBT, and the measurement result has high accuracy.
Description
Technical Field
The invention relates to the technical field of power transmission of a power system, in particular to a junction temperature monitoring method, device and system of an IGBT.
Background
The power sub-module is a minimum energy storage and power conversion unit of a Modular Multilevel Converter (MMC) system, and a core power device of the power sub-module is an Insulated Gate Bipolar Transistor (IGBT) and is also a main heating device during the operation of the sub-module. According to a device manual, the IGBT has the limitation of the maximum working junction temperature, and in order to avoid the phenomenon that the IGBT is too high in heating and fails due to overload, the junction temperature of the IGBT needs to be monitored in real time so as to be configured with corresponding overheating protection measures.
At present, the IGBT junction temperature test method is various, and roughly comprises a contact type, a temperature-sensitive electrical parameter method and a non-contact type 3. However, in the process of implementing the invention, the inventor finds that the prior art has at least the following problems: the contact test method can damage the device packaging structure, and further change the heat dissipation condition and the heat dissipation path, so that the junction temperature of the chip is greatly different from the actual condition. The temperature-sensitive electrical parameter method needs to build an additional small-current trigger circuit for the IGBT, needs to solve the problem of voltage resistance of the small-current trigger circuit and the problem of matching with actual working current, and is not suitable for measuring the junction temperature of the IGBT in actual engineering operation. The non-contact temperature measurement adopts physical quantities such as electromagnetic waves emitted by a detection object to measure the temperature, and requires that the object to be measured is exposed in an open space, has no barrier with other objects and is greatly influenced by environmental factors. Because the chip in the crimping type IGBT device is completely covered by the polar plate of the collector and the emitter, the electromagnetic wave radiated by the chip can not be emitted, and therefore, the method is not suitable for measuring the junction temperature of the IGBT of the neutron module in the practical engineering.
Disclosure of Invention
The embodiment of the invention aims to provide a junction temperature monitoring method, a junction temperature monitoring device and a junction temperature monitoring system for an IGBT, which can monitor the junction temperature of the IGBT in the operation process in real time under the condition of not influencing the actual engineering operation condition of the IGBT, and have high accuracy of the measurement result.
In order to achieve the above object, an embodiment of the present invention provides a junction temperature monitoring method for an IGBT, including:
when the IGBT to be tested is arranged in the calibration curve test circuit, controlling the calibration curve test circuit to test the tube voltage drop of the IGBT to be tested under different junction temperatures so as to obtain a junction temperature calibration curve of the IGBT to be tested; the junction temperature calibration curve records the corresponding relation between the tube voltage drop and the junction temperature of the IGBT to be tested;
after obtaining a junction temperature calibration curve of the IGBT to be tested, when the IGBT to be tested is arranged in a thermal resistance testing circuit, controlling the thermal resistance testing circuit to measure the pipe voltage drop of the IGBT to be tested under the preset power loss;
acquiring junction temperature of the IGBT to be tested under the preset power loss according to the tube voltage drop of the IGBT to be tested under the preset power loss and the junction temperature calibration curve so as to calculate thermal resistance of the IGBT to be tested;
after the thermal resistance of the IGBT to be tested is calculated, in the process that the IGBT to be tested is put into actual engineering operation, the real-time junction temperature of the IGBT to be tested is calculated according to the thermal resistance and the actual power loss of the IGBT to be tested.
As an improvement of the above scheme, the calculating a real-time junction temperature of the IGBT according to a thermal resistance and an actual power loss of the IGBT in a process of putting the IGBT to be tested into actual engineering operation specifically includes:
monitoring the real-time surface temperature of the IGBT to be tested in the process of putting the IGBT to be tested into actual engineering operation;
according to the thermal resistance, the actual power loss and the real-time surface temperature of the IGBT to be tested, calculating the real-time junction temperature of the IGBT to be tested through the following calculation formula:
Tj(t)＝Zth,jc×p+TC(t)；
wherein, Tj(t) is the real-time junction temperature of the IGBT under test, Zth,jcIs the thermal resistance of the IGBT to be tested, p is the actual power loss of the IGBT to be tested, TCAnd (t) is the real-time surface temperature of the IGBT to be tested.
As an improvement of the above scheme, the calibration curve test circuit comprises a gate voltage trigger unit, a measurement current source and a tube voltage drop measurement unit;
when the IGBT to be tested is arranged in the calibration curve test circuit, the gate pole of the IGBT to be tested is connected with the positive pole of the gate pole voltage trigger unit, and the emitter of the IGBT to be tested is connected with the negative pole of the gate pole voltage trigger unit; the emitter of the IGBT to be tested is also connected with the anode of the measurement current source, and the collector of the IGBT to be tested is connected with the cathode of the measurement current source; the tube voltage drop measuring unit is connected in parallel with a collector and an emitter of the IGBT to be tested.
As an improvement of the above scheme, the controlling the calibration curve test circuit to test the tube voltage drop of the IGBT to be tested at different junction temperatures to obtain the junction temperature calibration curve of the IGBT to be tested specifically includes:
controlling the gate voltage trigger unit to send out a trigger signal so as to enable the IGBT to be tested to be conducted;
controlling the measuring current source to supply a preset measuring current to the IGBT to be measured;
controlling the tube voltage drop measuring unit to measure tube voltage drops of the IGBT to be measured at different junction temperatures;
and forming the junction temperature calibration curve according to the junction temperature of the IGBT to be tested and the tube voltage drop under different junction temperatures.
As an improvement of the scheme, the IGBT to be tested is heated by adopting a heating incubator, and the temperature of the heating incubator is adjusted to enable the IGBT to be tested to be in different junction temperatures.
As an improvement of the above scheme, the thermal resistance test circuit comprises a pair-pulling circuit, a gate drive unit, a measurement current source and a tube voltage drop measurement unit; the dual-drive circuit comprises a dual-drive circuit, a dual-drive circuit and a dual-drive circuit, wherein the dual-drive circuit consists of two identical half-bridge power sub-modules, and the two half-bridge power sub-modules are connected through a load reactance; each half-bridge power sub-module comprises two identical power switching devices;
when the IGBT to be tested is arranged in the thermal resistance test circuit, the IGBT to be tested is used as one power switch device in any half-bridge power sub-module, and the three tested IGBTs which are the same as the IGBT to be tested are used as the other three power switch devices; the emitter of the IGBT to be tested is connected with the positive electrode of the measuring current source, the collector of the IGBT to be tested is connected with the negative electrode of the measuring current source, and the tube voltage drop measuring unit is connected with the collector and the emitter of the IGBT to be tested in parallel; and the gate poles of the tested IGBT and each accompanied IGBT are connected with the gate pole driving unit.
As an improvement of the above scheme, the controlling the thermal resistance test circuit to measure the tube voltage drop of the IGBT to be tested under a preset power loss specifically includes:
controlling the gate driving unit to send out a first trigger signal so as to conduct the IGBT to be tested and each IGBT to be tested, so that load current is generated on the IGBT to be tested and the IGBT to be tested is under the preset power loss;
when the tested IGBT is in a thermal equilibrium state, controlling the gate drive unit to send out a second trigger signal so as to turn off the tested IGBT and each tested IGBT;
when the load current on the IGBT to be tested is reduced to zero, controlling the gate driving unit to send out a third trigger signal so as to conduct the IGBT to be tested; controlling the measuring current source to supply a preset measuring current to the IGBT to be measured;
and controlling the tube voltage drop measuring unit to measure the tube voltage drop of the IGBT to be measured under the preset power loss.
As an improvement of the above scheme, obtaining the junction temperature of the IGBT under the preset power loss according to the tube voltage drop of the IGBT under test under the preset power loss and the junction temperature calibration curve to calculate the thermal resistance of the IGBT, specifically including:
acquiring junction temperature of the IGBT to be tested under the preset power loss according to the tube voltage drop of the IGBT to be tested under the preset power loss and the junction temperature calibration curve;
measuring the surface temperature of the IGBT to be measured under the preset power loss;
according to the junction temperature, the surface temperature and the preset power loss of the IGBT to be tested under the preset power loss, calculating the thermal resistance of the IGBT to be tested through the following calculation formula:
wherein Z isth,jcIs the thermal resistance of the IGBT under test, p0To said isGiven the power loss, the power loss is,
and
and respectively representing the junction temperature and the surface temperature of the IGBT to be tested under the preset power loss.
The embodiment of the invention also provides a junction temperature monitoring device of the IGBT, which comprises a first control module, a second control module, a first calculation module and a second calculation module; wherein,
the first control module is used for controlling the calibration curve test circuit to test the tube voltage drop of the IGBT to be tested under different junction temperatures when the IGBT to be tested is arranged in the calibration curve test circuit so as to obtain a junction temperature calibration curve of the IGBT to be tested; the junction temperature calibration curve records the corresponding relation between the tube voltage drop and the junction temperature of the IGBT to be tested;
the second control module is used for controlling the thermal resistance test circuit to measure the pipe voltage drop of the IGBT to be tested under the preset power loss when the IGBT to be tested is arranged in the thermal resistance test circuit after the junction temperature calibration curve of the IGBT to be tested is obtained;
the first calculation module is configured to obtain a junction temperature of the measured IGBT under the preset power loss according to the tube voltage drop of the measured IGBT under the preset power loss and the junction temperature calibration curve, so as to calculate a thermal resistance of the measured IGBT;
and the second calculation module is used for calculating the real-time junction temperature of the IGBT to be measured according to the thermal resistance and the actual power loss of the IGBT to be measured in the process of putting the IGBT to be measured into actual engineering operation after calculating the thermal resistance of the IGBT to be measured.
The embodiment of the present invention further provides a junction temperature monitoring system of an IGBT, including: the calibration circuit comprises a calibration curve test circuit, a thermal resistance test circuit and a central control device; wherein the central control device comprises junction temperature monitoring device of the IGBT as described above.
Compared with the prior art, the junction temperature monitoring method, the junction temperature monitoring device and the junction temperature monitoring system of the IGBT disclosed by the invention have the advantages that the junction temperature calibration curve of the IGBT to be tested is obtained by controlling the calibration curve test circuit, the thermal resistance of the IGBT to be tested is obtained by controlling the thermal resistance test circuit, and finally the real-time junction temperature of the IGBT can be reversely deduced by using the thermal resistance calculation formula by monitoring the actual power loss and the surface temperature of the IGBT to be tested in the actual engineering operation. The embodiment of the invention can monitor the junction temperature of the IGBT in the running process in real time under the condition of not influencing the actual engineering running condition of the IGBT, thereby assisting the power system to configure corresponding overheat protection measures according to the running condition. According to the IGBT junction temperature monitoring method, the real-time junction temperature of the IGBT to be measured in the actual operation state can be obtained without directly measuring the junction temperature of the IGBT to be measured, the IGBT junction temperature monitoring method is suitable for occasions where the IGBT in the operation state cannot be directly measured or direct measurement conditions cannot be obtained, and the measurement result accuracy is high.
Drawings
Fig. 1 is a schematic step flow diagram of a junction temperature monitoring method for an IGBT according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a calibration curve test circuit according to a second embodiment of the present invention;
fig. 3 is a schematic flow chart of the step of obtaining the junction temperature calibration curve of the IGBT to be tested in the second embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a thermal resistance test circuit according to a third embodiment of the present invention;
FIG. 5 is a schematic diagram of a preferred thermal resistance test circuit according to a third embodiment of the present invention;
FIG. 6 is a schematic flow chart of the steps for obtaining the thermal resistance of the IGBT to be tested in the third embodiment of the present invention;
FIG. 7 is a schematic view of a thermocouple installation in accordance with a fourth embodiment of the present invention;
fig. 8 is a schematic structural diagram of a junction temperature monitoring device for an IGBT according to a fifth embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, a schematic step flow diagram of a method for monitoring junction temperature of an IGBT according to an embodiment of the present invention is shown. According to the method for monitoring the junction temperature of the IGBT provided by the first embodiment of the present invention, steps S11 to S14 are performed:
and S11, when the IGBT to be tested is arranged in the calibration curve test circuit, controlling the calibration curve test circuit to test the tube voltage drop of the IGBT to be tested at different junction temperatures so as to obtain a junction temperature calibration curve of the IGBT to be tested. And the calibration curve records the corresponding relation between the tube voltage drop and the junction temperature of the IGBT to be tested.
Specifically, a junction temperature calibration curve test circuit of the IGBT is set up in advance, and the IGBT to be tested is connected to the calibration curve test circuit. The temperature of the environment where the IGBT to be tested is located is adjusted, so that the IGBT to be tested is located at different junction temperatures TjThe following steps. Measuring the tube voltage drop V of the IGBT under different junction temperaturescesatThereby forming a V-related linecesat-TjThe calibration curve of (1).
By way of example, a set of ambient temperatures T is predetermined1、T2、…、TnWherein, T1To TnAre all less than the maximum operating temperature of the IGBT to be tested. By setting the IGBT to be tested at a temperature of T1And keeping the temperature for a certain time to ensure that the junction temperature of the IGBT to be tested is equal to the ambient temperature T1And (5) the consistency is achieved. The IGBT to be tested is enabled to be in a certain running state in the calibration curve test circuit, and the current environment temperature T of the IGBT to be tested is measured1Pipe pressure drop Vcesat1And the temperature T is measured1And tube voltage drop Vcesat1Recorded and stored as a set of correspondences. Then, the environment temperature of the IGBT to be tested is adjusted to be T2And the temperature is kept for a certain time,so that the junction temperature of the IGBT to be tested is equal to the ambient temperature T2And (5) the consistency is achieved. Measuring the current ambient temperature T of the IGBT to be tested2Pipe pressure drop Vcesat2And recording the temperature T2And tube voltage drop Vcesat2. The corresponding relation between n groups of junction temperatures and tube voltage drops of the IGBT to be tested is obtained through recording, and therefore the V is formedcesat-TjThe calibration curve of (1).
And S12, after obtaining the junction temperature calibration curve of the IGBT to be tested, when the IGBT to be tested is arranged in a thermal resistance test circuit, controlling the thermal resistance test circuit to measure the pipe voltage drop of the IGBT to be tested under the preset power loss.
And S13, acquiring junction temperature of the IGBT to be tested under the preset power loss according to the tube voltage drop of the IGBT to be tested under the preset power loss and the calibration curve so as to calculate the thermal resistance of the IGBT to be tested.
Specifically, after a junction temperature calibration curve of the IGBT to be tested is obtained, the IGBT to be tested is connected to a thermal resistance test circuit by building the thermal resistance test circuit of the IGBT in advance. Controlling the IGBT to be tested to be in a preset power loss p in the thermal resistance test circuit0Under the operation state of the IGBT, measuring the saturation tube voltage drop U of the IGBT to be tested under the current operation statecesat. According to the pipe voltage drop U of the IGBT to be tested under the preset power losscesatAnd searching a previously obtained junction temperature calibration curve of the IGBT to be tested to obtain the tube voltage drop UcesatCorresponding junction temperature, namely the junction temperature of the IGBT to be tested under the preset power loss
According to the junction temperature of the IGBT to be tested
And the preset power loss p0And calculating to obtain the thermal resistance Z of the IGBT to be testedth,jc。
And S14, after calculating the thermal resistance of the IGBT to be tested, calculating the real-time junction temperature of the IGBT to be tested according to the thermal resistance and the actual power loss of the IGBT to be tested in the process of putting the IGBT to be tested into actual engineering operation.
Specifically, step S14 includes steps S141 and S142:
s141, monitoring the real-time surface temperature of the IGBT to be detected in the process of putting the IGBT to be detected into actual engineering operation;
s142, calculating the real-time junction temperature of the IGBT to be detected according to the thermal resistance, the actual power loss and the real-time surface temperature of the IGBT to be detected through the following calculation formula:
Tj(t)＝Zth,jc×p+TC(t)；
wherein, Tj(t) is the real-time junction temperature of the IGBT under test, Zth,jcIs the thermal resistance of the IGBT to be tested, p is the actual power loss of the IGBT to be tested, TCAnd (t) is the real-time surface temperature of the IGBT to be tested.
After the thermal resistance of the measured IGBT is calculated, the real-time junction temperature of the measured IGBT in the actual engineering operation process can be calculated according to the thermal resistance of the measured IGBT, the actual power loss and the real-time surface temperature of the measured IGBT in the actual operation process without influencing the operation condition of the measured IGBT in the actual engineering operation process of the measured IGBT.
The embodiment of the invention provides a junction temperature monitoring method of an IGBT, which comprises the steps of obtaining a junction temperature calibration curve of the IGBT to be tested through a calibration curve testing circuit, obtaining the thermal resistance of the IGBT to be tested through a thermal resistance testing circuit, and finally reversely deducing the real-time junction temperature of the IGBT by using a thermal resistance calculation formula through monitoring the actual power loss and the surface temperature of the IGBT to be tested in the actual engineering operation. The embodiment of the invention can monitor the junction temperature of the IGBT in the running process in real time under the condition of not influencing the actual engineering running condition of the IGBT, thereby assisting the power system to configure corresponding overheat protection measures according to the running condition. According to the IGBT junction temperature monitoring method, the real-time junction temperature of the IGBT to be measured in the actual operation state can be obtained without directly measuring the junction temperature of the IGBT to be measured, the IGBT junction temperature monitoring method is suitable for occasions where the IGBT in the operation state cannot be directly measured or direct measurement conditions cannot be obtained, and the measurement result accuracy is high.
Referring to fig. 2-3, fig. 2 is a schematic structural diagram of a calibration curve test circuit according to a second embodiment of the present invention; fig. 3 is a schematic flow chart of the steps of obtaining the junction temperature calibration curve of the IGBT to be tested in the second embodiment of the present invention. The junction temperature monitoring method of the IGBT provided by the second embodiment of the invention is implemented on the basis of the first embodiment.
In the second embodiment of the present invention, referring to fig. 2, the calibration curve test circuit 20 includes a gate voltage trigger unit Vge, a measurement current source Im, and a tube voltage drop measurement unit Vce;
when the IGBT to be tested is arranged in the calibration curve test circuit 20, the gate pole of the IGBT to be tested is connected with the positive pole of the gate pole voltage trigger unit Vge, and the emitter of the IGBT to be tested is connected with the negative pole of the gate pole voltage trigger unit Vge; the emitter of the IGBT to be tested is also connected with the positive electrode of the measurement current source Im, and the collector of the IGBT to be tested is connected with the negative electrode of the measurement current source Im; the tube voltage drop measuring unit Vce is connected in parallel with the collector and the emitter of the IGBT to be tested, so that a complete calibration curve test circuit is formed.
It should be noted that, in the drawings of the novel embodiment of the present invention, only the connection relationship between the IGBT device to be tested and the gate voltage trigger unit Vge is described, but the gates of the first IGBT device T1, the second IGBT device T2, and the third IGBT device T3 also need to be connected to the gate voltage trigger unit Vge to implement the on and off of the IGBT device.
The gate voltage trigger unit Vge is used for triggering the on and off states of the IGBT to be tested, and the measuring current source Im is used for providing an operating current I for the IGBT to be testedmAnd the pipe voltage drop measuring unit Vce is used for measuring the pipe voltage drop V of the IGBT to be testedcesat。
Further, referring to fig. 3, the process of obtaining the junction temperature calibration curve of the IGBT to be tested specifically includes steps S21 to S24:
s21, controlling the gate voltage trigger unit Vge to send out a trigger signal so as to enable the IGBT to be tested to be conducted;
s22, controlling the measuring current source Im to lead a preset measuring current I to the IGBT to be measuredm；
S23, controlling the tube voltage drop measuring unit Vce to measure the tube voltage drop V of the IGBT to be measured at different junction temperaturescesat；
S24, according to the junction temperature T of the IGBT to be testedjAnd tube voltage drop V at different junction temperaturescesatAnd forming the junction temperature calibration curve.
In a preferred embodiment, the IGBT to be tested is heated by a heating incubator, and the temperature of the heating incubator is adjusted so that the IGBT to be tested is at different junction temperatures.
In the embodiment of the present invention, the IGBT to be tested is connected to the calibration curve test circuit 20, and the IGBT to be tested is installed in the heating oven, and the heating oven is adjusted to different temperatures T1、T2、…、TnAnd keeping the temperature of the IGBT to be tested consistent with the temperature of the heating incubator for a certain time so as to use the temperature of the heating incubator as the junction temperature of the IGBT to be tested.
Specifically, the temperature of the heating incubator is adjusted to T1And held for a certain time. Then, controlling the gate pole voltage trigger unit Vge to send out a trigger signal so as to enable the IGBT to be tested to be conducted, and simultaneously controlling the measurement current source Im to introduce a preset measurement current I with a very small current value into the IGBT to be testedm. And finally, controlling the tube voltage drop measuring unit Vce to measure the junction temperature T of the IGBT to be measured1Pipe pressure drop Vcesat1Recording the junction temperature T of the IGBT1And tube voltage drop Vcesat1. Repeating the measurement operation at different temperatures by adjusting the temperature of the heating incubator, and recording the corresponding relation between n sets of junction temperatures and tube voltage drops of the IGBT to be measured, thereby forming the junction temperature calibration curve Vcesat＝f(Tj，Im)。
Preferably, the preset measurement current ImIs taken as the rated power of the IGBTStream INOne thousandth of (A), i.e. Im＝0.0001IN。
By adopting the technical means of the embodiment of the invention, the IGBT to be tested is enabled to pass through a very small measuring current, and the IGBT to be tested is enabled to be at different junction temperatures by changing the environmental temperature of the heating incubator, thereby forming Vcesat＝ f(Tj，Im) The junction temperature calibration curve so as to test the thermal resistance of the IGBT to be tested subsequently.
Referring to fig. 4-5, fig. 4 is a schematic structural diagram of a thermal resistance test circuit in a third embodiment of the present invention; fig. 5 is a schematic flow chart of the steps of obtaining the thermal resistance of the IGBT to be tested in the third embodiment of the present invention. The junction temperature monitoring method of the IGBT provided by the third embodiment of the invention is implemented on the basis of the first embodiment.
In the third embodiment of the present invention, the thermal resistance test circuit 30 includes a pair pulling circuit 31, a gate driving unit 32, a measurement current source Im, and a tube voltage drop measurement unit Vce. Each half-bridge power sub-module comprises two identical IGBT devices and a direct current capacitor so as to form the half-bridge power sub-module. And the two half-bridge power sub-modules are connected through a load reactance L to form the pair-pulling circuit.
In the embodiment of the invention, referring to fig. 4, the upper bridge arm of the half-bridge power sub-module comprises an IGBT device T1, and two ends of the IGBT device T1 are connected in parallel with a diode D1 in a reverse direction; the lower arm includes a power switch device T2 with a diode D2 connected in reverse parallel across it. The emitter of the IGBT device T1 is connected to the collector of the IGBT device T2. And after being connected in series, the two identical IGBT devices are connected in parallel with the direct current capacitor C1. The function of the dc capacitor C1 is to maintain a dc voltage.
The collector of the IGBT device T1 is connected with the collector of the IGBT device T3 in the other half-bridge power sub-module, and the emitter of the IGBT device T2 is connected with the emitter of the IGBT device T4 in the other half-bridge power sub-module. The emitter of the IGBT device T1 is connected to one end of the load reactance L, and the other end of the load reactance L is connected to the emitter of the IGBT device T3, thereby configuring the pair-pulling circuit.
In the process of measuring the thermal resistance of the IGBT to be measured, the IGBT to be measured is used as one IGBT device in any half-bridge power sub-module and is arranged in the thermal resistance test circuit, and the other three IGBT devices are used as auxiliary IGBT. The emitter of the IGBT to be tested is connected with the positive electrode of the measuring current source Im, the collector of the IGBT to be tested is connected with the negative electrode of the measuring current source Im, and the tube voltage drop measuring unit Vce is connected with the collector and the emitter of the IGBT to be tested in parallel; and the gate poles of the tested IGBT and each accompanied IGBT are connected with the gate pole driving unit.
It should be noted that the specification and model of the accompanied IGBT need to be completely consistent with the IGBT to be tested, so as to ensure the implementation of the function of the dragging circuit.
Preferably, referring to fig. 4, an energy supplementing power supply is further connected in parallel to two ends of the pair pulling circuit, and is used for supplementing the loss generated by the IGBT to be tested in the thermal resistance test circuit. Because the IGBT to be tested generates loss and heat in the turn-off and turn-on processes, if no energy complementing circuit exists, the voltage at the two ends of the capacitor C1 is gradually reduced to 0, and the experiment is influenced.
Further, referring to fig. 6, the process of obtaining the thermal resistance of the IGBT to be tested specifically includes steps S31 to S37:
s31, controlling the gate drive unit to send out a first trigger signal to conduct the IGBT to be tested and each IGBT to be tested, so that a load current I is generated on the IGBT to be testedLAnd at the preset power loss p0And (5) the following.
And S32, controlling the gate driving unit to send out a second trigger signal to turn off the IGBT to be tested and each accompanied IGBT after the IGBT to be tested is in a thermal equilibrium state.
S33, when the load current I on the IGBT to be testedLAfter the voltage is reduced to zero, controlling the gate driving unit to send out a third trigger signal so as to conduct the IGBT to be tested; and controlling the measuring current source to supply a preset measuring current I to the IGBT to be measuredm。
S34, controlling the tube voltage drop measuring unit to measure that the IGBT to be tested is under the preset power lossTube voltage drop U ofcesat。
S35, according to the pipe voltage drop U of the IGBT to be tested under the preset power losscesatAnd the junction temperature calibration curve is used for acquiring the junction temperature of the IGBT to be tested under the preset power loss
S36, measuring the surface temperature of the IGBT to be measured under the preset power loss
S37, according to the junction temperature of the IGBT to be tested under the preset power loss
Surface temperature
And the preset power loss p0And calculating the thermal resistance of the IGBT to be tested through a thermal resistance calculation formula:
wherein Z isth,jcIs the thermal resistance of the IGBT under test, p0For the purpose of the pre-set power loss,
and
and respectively representing the junction temperature and the surface temperature of the IGBT to be tested under the preset power loss.
In the embodiment of the invention, a thermal resistance test circuit 30 of the IGBT to be tested is set up in advance, the IGBT to be tested is used as a power switch device in a pair-pulling circuit, and a measurement current source Im and a tube voltage drop measurement unit Vce are connected to two ends of the IGBT to be tested. The on and off of each IGBT in the dragging circuit are triggered by a gate driving unit.
In the thermal resistance test process of the IGBT to be tested, a load current i is introduced to the load reactance LaThe load current iaFor alternating current, see fig. 5, the current positive direction is set from left to right. And controlling the gate driving unit to send out a first trigger signal so as to conduct the IGBT to be tested and each IGBT to be tested. When the load current i of the load reactanceaWhen the current is positive, power loss is generated on the IGBT to be tested, so that load current I is generatedL. Load current i when the load reactanceaWhen the voltage is negative, no current exists on the IGBT to be tested. By controlling the load current iaSo that the IGBT is in a stable preset power loss p0And meanwhile, the environmental temperature of the IGBT to be tested is ensured to be unchanged, so that the surface temperature of the IGBT to be tested is unchanged. After a certain time, the IGBT to be tested is in a thermal equilibrium state, and a stable junction temperature is formed
And then, controlling the gate driving unit to send out a second trigger signal so as to turn off the IGBT to be tested and each accompanied IGBT. At this time, the load current I on the IGBT to be testedLDC voltage U due to DC capacitor C1cAnd is turned off rapidly by the reverse direction. The load current I on the IGBT to be testedLAfter the current value is reduced to zero, the gate drive unit is rapidly controlled to send out a third trigger signal so as to conduct the IGBT to be tested, and the measurement current source Im is simultaneously controlled to supply a preset measurement current I with a smaller current value to the IGBT to be testedmDue to said predetermined measuring current ImThe current value of the voltage drop measuring unit is smaller, the IGBT to be measured does not generate heat under the preset measuring current, but still generates voltage drop, and the tube voltage drop measuring unit is controlled to measure the saturation forward voltage drop U of the IGBT to be measured under the preset measuring currentcesat。
It should be noted that the preset measuring current ImAnd in the process of acquiring the calibration curve of the IGBT to be testedThe sizes of the introduced preset measuring currents are consistent. The preset measuring current ImIs taken as the rated current I of the IGBTNOne thousandth of (A), i.e. Im＝0.0001IN。
Then, according to the junction temperature calibration curve obtained in advance, the tube pressure drop U is searchedcesatThe corresponding junction temperature value can obtain the current junction temperature of the IGBT to be tested
Finally, measuring the surface temperature of the IGBT to be measured under the preset power loss
According to the junction temperature
Surface temperature
And the preset power loss p0The thermal resistance Z of the IGBT to be tested can be obtained through calculation by a thermal resistance calculation formulath,jc。
After the thermal resistance of the IGBT to be measured is calculated, the real-time junction temperature of the IGBT to be measured in the actual engineering operation process can be calculated according to the thermal resistance of the IGBT to be measured, the actual power loss and the real-time surface temperature of the IGBT to be measured in the actual engineering operation process.
By adopting the technical means of the embodiment of the invention, a certain load current I is applied to the IGBT to be testedLAnd enabling the IGBT to be tested to be in a stable power loss condition, and finally enabling the IGBT to form a stable junction temperature. Then the load current ILDown to the preset measuring current ImMeasuring the saturation forward voltage drop of the IGBT to be measured, deducing the current junction temperature according to a pre-obtained junction temperature calibration curve of the IGBT to be measured, namely calculating the thermal resistance of the IGBT to be measured so as to facilitate the IGBT to be measured to run in actual engineeringIn the process, the real-time junction temperature of the IGBT to be detected can be calculated only by detecting the power loss and the surface temperature of the IGBT to be detected, the operation is more convenient and simpler, and the operation condition of the IGBT to be detected is not influenced.
As a preferred implementation manner, refer to fig. 5, which is a schematic structural diagram of a preferred thermal resistance test circuit in a third embodiment of the present invention. The gate driving circuit in the third embodiment of the present invention may be the gate voltage triggering unit Vge in the calibration curve testing circuit as provided in the second embodiment, and the measurement current source Im and the tube voltage drop measuring unit Vce in the third embodiment of the present invention may also be the measurement current source Im and the tube voltage drop measuring unit Vce as provided in the second embodiment. Therefore, the calibration curve test circuit and the thermal resistance test circuit can be combined, and the corresponding mechanical switch is arranged to control the on and off of the mechanical switch, so that the IGBT to be tested is put into different test circuits, the design of the circuit structure is further simplified, and the beneficial effects of the invention are not influenced.
By way of example, by providing a first switch S1 and a second switch S2,. The first switch S1 is arranged between the collector electrode of the IGBT device to be tested and the collector electrode of the second IGBT device; the second switch S2 is disposed between the emitter of the IGBT device under test and the collector of the first IGBT device.
When the first switch S1 and the second switch S2 are turned off, a circuit structure formed by the IGBT device to be tested, the gate voltage trigger unit Vge, the tube voltage drop measurement unit Vce, and the measurement current source Im forms a calibration curve test circuit alone, which can be used to obtain the junction temperature calibration curve Vcesat＝f(Tj，Im). And then, the first switch S1 and the second switch S2 are closed, so that the thermal resistance measuring circuit can be obtained and used for measuring the thermal resistance of the IGBT, and the design of a power structure is simplified.
In a preferred embodiment, the surface temperature of the IGBT under test is measured by a thermocouple device. Referring to fig. 7, which is a schematic view of thermocouple installation in the fourth embodiment of the present invention, a thermocouple device for measuring temperature is installed in advance at a suitable position inside the IGBT to be tested, and the IGBT is testedAnd water cooling passages are arranged in radiators at two ends of the IGBT. The surface temperature T of the IGBT to be tested can be obtained by monitoring the shell temperature of the radiator of the thermocouple devicec. The surface temperature testing method is suitable for the thermal resistance testing process in the third embodiment and is also suitable for the actual engineering operation process of the IGBT to be tested.
Fig. 8 is a schematic structural diagram of a junction temperature monitoring device for an IGBT according to a fifth embodiment of the present invention. The junction temperature monitoring device for the IGBT according to the fifth embodiment of the present invention includes a first control module 51, a second control module 52, a first calculating module 53, and a second calculating module 54. Wherein,
the first control module 51 is configured to control the calibration curve test circuit to test the tube voltage drops of the IGBT to be tested at different junction temperatures when the IGBT to be tested is arranged in the calibration curve test circuit, so as to obtain a junction temperature calibration curve of the IGBT to be tested; the calibration curve records the corresponding relation between the tube voltage drop and the junction temperature of the IGBT to be tested;
the second control module 52 is configured to, after obtaining the junction temperature calibration curve of the IGBT to be tested, control the thermal resistance test circuit to measure the tube voltage drop of the IGBT to be tested under a preset power loss when the IGBT to be tested is arranged in the thermal resistance test circuit;
the first calculating module 53 is configured to obtain a junction temperature of the measured IGBT under the preset power loss according to the tube voltage drop of the measured IGBT under the preset power loss and the calibration curve, so as to calculate a thermal resistance of the measured IGBT;
the second calculating module 54 is configured to calculate a real-time junction temperature of the IGBT to be measured according to the thermal resistance and the actual power loss of the IGBT to be measured in the process of putting the IGBT to be measured into actual engineering operation after calculating the thermal resistance of the IGBT to be measured.
It should be noted that the junction temperature monitoring device for the IGBT according to the embodiment of the present invention is used for executing all the process steps of the junction temperature monitoring method for the IGBT according to the embodiment, and working principles and beneficial effects of the two are in one-to-one correspondence, so that details are not described again.
The fifth embodiment of the invention provides a junction temperature monitoring device of an IGBT, which obtains a junction temperature calibration curve of the IGBT to be tested by controlling a calibration curve test circuit, then obtains the thermal resistance of the IGBT to be tested by controlling a thermal resistance test circuit, and finally reversely deduces the real-time junction temperature of the IGBT by using a thermal resistance calculation formula by monitoring the actual power loss and the surface temperature of the IGBT to be tested in the actual engineering operation. The embodiment of the invention can monitor the junction temperature of the IGBT in the running process in real time under the condition of not influencing the actual engineering running condition of the IGBT, thereby assisting the power system to configure corresponding overheat protection measures according to the running condition. According to the IGBT junction temperature monitoring method, the real-time junction temperature of the IGBT to be measured in the actual operation state can be obtained without directly measuring the junction temperature of the IGBT to be measured, the IGBT junction temperature monitoring method is suitable for occasions where the IGBT in the operation state cannot be directly measured or direct measurement conditions cannot be obtained, and the measurement result accuracy is high.
As a preferred implementation manner, an embodiment of the present invention further provides a junction temperature monitoring system for an IGBT, including: the calibration circuit comprises a calibration curve test circuit, a thermal resistance test circuit and a central control device; the central control device includes the junction temperature monitoring device 50 of the IGBT according to the sixth embodiment, which is configured to execute the junction temperature monitoring method of the IGBT according to any one of the first to fourth embodiments.
It will be understood by those skilled in the art that all or part of the processes of the methods of the embodiments described above can be implemented by a computer program, which can be stored in a computer-readable storage medium, and when executed, can include the processes of the embodiments of the methods described above. The storage medium may be a magnetic disk, an optical disk, a Read-only memory (ROM), a Random Access Memory (RAM), or the like.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention.
Claims (8)
1. A method for monitoring junction temperature of an IGBT, comprising:
when the IGBT to be tested is arranged in the calibration curve test circuit, controlling the calibration curve test circuit to test the tube voltage drop of the IGBT to be tested under different junction temperatures so as to obtain a junction temperature calibration curve of the IGBT to be tested; the junction temperature calibration curve records the corresponding relation between the tube voltage drop and the junction temperature of the IGBT to be tested;
after obtaining a junction temperature calibration curve of the IGBT to be tested, when the IGBT to be tested is arranged in a thermal resistance testing circuit, controlling the thermal resistance testing circuit to measure the pipe voltage drop of the IGBT to be tested under the preset power loss;
acquiring junction temperature of the IGBT to be tested under the preset power loss according to the tube voltage drop of the IGBT to be tested under the preset power loss and the junction temperature calibration curve so as to calculate thermal resistance of the IGBT to be tested;
after calculating the thermal resistance of the IGBT to be measured, calculating the real-time junction temperature of the IGBT to be measured according to the thermal resistance and the actual power loss of the IGBT to be measured in the process that the IGBT to be measured is put into actual engineering operation;
the thermal resistance test circuit comprises a pair-pulling circuit, a gate pole driving unit, a measurement current source and a tube voltage drop measurement unit; the dual-drive circuit comprises a dual-drive circuit, a dual-drive circuit and a dual-drive circuit, wherein the dual-drive circuit consists of two identical half-bridge power sub-modules, and the two half-bridge power sub-modules are connected through a load reactance; each half-bridge power sub-module comprises two identical power switching devices;
when the IGBT to be tested is arranged in the thermal resistance test circuit, the IGBT to be tested is used as one power switch device in any half-bridge power sub-module, and the three tested IGBTs which are the same as the IGBT to be tested are used as the other three power switch devices; the emitter of the IGBT to be tested is connected with the positive electrode of the measuring current source, the collector of the IGBT to be tested is connected with the negative electrode of the measuring current source, and the tube voltage drop measuring unit is connected with the collector and the emitter of the IGBT to be tested in parallel; the gate electrodes of the tested IGBT and each accompanied IGBT are connected with the gate electrode driving unit;
the controlling the thermal resistance testing circuit to measure the pipe voltage drop of the tested IGBT under the preset power loss specifically comprises:
controlling the gate driving unit to send out a first trigger signal so as to conduct the IGBT to be tested and each IGBT to be tested, so that load current is generated on the IGBT to be tested and the IGBT to be tested is under the preset power loss;
when the tested IGBT is in a thermal equilibrium state, controlling the gate drive unit to send out a second trigger signal so as to turn off the tested IGBT and each tested IGBT;
when the load current on the IGBT to be tested is reduced to zero, controlling the gate driving unit to send out a third trigger signal so as to conduct the IGBT to be tested; controlling the measuring current source to supply a preset measuring current to the IGBT to be measured;
and controlling the tube voltage drop measuring unit to measure the tube voltage drop of the IGBT to be measured under the preset power loss.
2. The method for monitoring the junction temperature of the IGBT according to claim 1, wherein calculating the real-time junction temperature of the IGBT according to the thermal resistance and the actual power loss of the IGBT in the process of putting the IGBT to be tested into actual engineering operation specifically includes:
monitoring the real-time surface temperature of the IGBT to be tested in the process of putting the IGBT to be tested into actual engineering operation;
according to the thermal resistance, the actual power loss and the real-time surface temperature of the IGBT to be tested, calculating the real-time junction temperature of the IGBT to be tested through the following calculation formula:
Tj(t)＝Zth,jc×p+TC(t)；
wherein, Tj(t) is the real-time junction temperature of the IGBT under test, Zth,jcIs the thermal resistance of the IGBT to be tested, p is the actual power loss of the IGBT to be tested, TCAnd (t) is the real-time surface temperature of the IGBT to be tested.
3. The method for monitoring the junction temperature of the IGBT according to claim 1, wherein the calibration curve test circuit comprises a gate voltage trigger unit, a measurement current source, and a tube voltage drop measurement unit;
when the IGBT to be tested is arranged in the calibration curve test circuit, the gate pole of the IGBT to be tested is connected with the positive pole of the gate pole voltage trigger unit, and the emitter of the IGBT to be tested is connected with the negative pole of the gate pole voltage trigger unit; the emitter of the IGBT to be tested is also connected with the anode of the measurement current source, and the collector of the IGBT to be tested is connected with the cathode of the measurement current source; the tube voltage drop measuring unit is connected in parallel with a collector and an emitter of the IGBT to be tested.
4. The method for monitoring the junction temperature of the IGBT according to claim 3, wherein the controlling the calibration curve test circuit to test the tube voltage drops of the IGBT to be tested at different junction temperatures to obtain the junction temperature calibration curve of the IGBT to be tested specifically includes:
controlling the gate voltage trigger unit to send out a trigger signal so as to enable the IGBT to be tested to be conducted;
controlling the measuring current source to supply a preset measuring current to the IGBT to be measured;
controlling the tube voltage drop measuring unit to measure tube voltage drops of the IGBT to be measured at different junction temperatures;
and forming the junction temperature calibration curve according to the junction temperature of the IGBT to be tested and the tube voltage drop under different junction temperatures.
5. The IGBT junction temperature monitoring method according to claim 4, wherein the IGBT to be tested is heated by a heating incubator, and the temperature of the heating incubator is adjusted so that the IGBT to be tested is at different junction temperatures.
6. The method for monitoring the junction temperature of the IGBT according to claim 1, wherein obtaining the junction temperature of the IGBT under test at the preset power loss according to the tube voltage drop of the IGBT under test at the preset power loss and the junction temperature calibration curve to calculate the thermal resistance of the IGBT, specifically includes:
acquiring junction temperature of the IGBT to be tested under the preset power loss according to the tube voltage drop of the IGBT to be tested under the preset power loss and the junction temperature calibration curve;
measuring the surface temperature of the IGBT to be measured under the preset power loss;
according to the junction temperature, the surface temperature and the preset power loss of the IGBT to be tested under the preset power loss, calculating the thermal resistance of the IGBT to be tested through the following calculation formula:
wherein Z isth,jcIs the thermal resistance of the IGBT under test, p0For the predetermined power loss, Tj0And TC0 is the junction temperature and the surface temperature of the IGBT to be tested under the preset power loss respectively.
7. The junction temperature monitoring device of the IGBT is characterized by comprising a first control module, a second control module, a first calculating module and a second calculating module; wherein,
the first control module is used for controlling the calibration curve test circuit to test the tube voltage drop of the IGBT to be tested under different junction temperatures when the IGBT to be tested is arranged in the calibration curve test circuit so as to obtain a junction temperature calibration curve of the IGBT to be tested; the junction temperature calibration curve records the corresponding relation between the tube voltage drop and the junction temperature of the IGBT to be tested;
the second control module is used for controlling the thermal resistance test circuit to measure the pipe voltage drop of the IGBT to be tested under the preset power loss when the IGBT to be tested is arranged in the thermal resistance test circuit after the junction temperature calibration curve of the IGBT to be tested is obtained;
the first calculation module is configured to obtain a junction temperature of the measured IGBT under the preset power loss according to the tube voltage drop of the measured IGBT under the preset power loss and the junction temperature calibration curve, so as to calculate a thermal resistance of the measured IGBT;
the second calculation module is used for calculating the real-time junction temperature of the IGBT to be measured according to the thermal resistance and the actual power loss of the IGBT to be measured in the process that the IGBT to be measured is put into actual engineering operation after the thermal resistance of the IGBT to be measured is calculated;
the thermal resistance test circuit comprises a pair-pulling circuit, a gate pole driving unit, a measurement current source and a tube voltage drop measurement unit; the dual-drive circuit comprises a dual-drive circuit, a dual-drive circuit and a dual-drive circuit, wherein the dual-drive circuit consists of two identical half-bridge power sub-modules, and the two half-bridge power sub-modules are connected through a load reactance; each half-bridge power sub-module comprises two identical power switching devices;
when the IGBT to be tested is arranged in the thermal resistance test circuit, the IGBT to be tested is used as one power switch device in any half-bridge power sub-module, and the three tested IGBTs which are the same as the IGBT to be tested are used as the other three power switch devices; the emitter of the IGBT to be tested is connected with the positive electrode of the measuring current source, the collector of the IGBT to be tested is connected with the negative electrode of the measuring current source, and the tube voltage drop measuring unit is connected with the collector and the emitter of the IGBT to be tested in parallel; the gate electrode of the IGBT to be tested and the gate electrode of each accompanied IGBT are connected with the gate electrode driving unit;
the controlling the thermal resistance testing circuit to measure the pipe voltage drop of the tested IGBT under the preset power loss specifically comprises:
controlling the gate driving unit to send out a first trigger signal so as to conduct the IGBT to be tested and each IGBT to be tested, so that load current is generated on the IGBT to be tested and the IGBT to be tested is under the preset power loss;
when the tested IGBT is in a thermal equilibrium state, controlling the gate drive unit to send out a second trigger signal so as to turn off the tested IGBT and each tested IGBT;
when the load current on the IGBT to be tested is reduced to zero, controlling the gate drive unit to send out a third trigger signal so as to conduct the IGBT to be tested; controlling the measuring current source to supply a preset measuring current to the IGBT to be measured;
and controlling the tube voltage drop measuring unit to measure the tube voltage drop of the IGBT to be measured under the preset power loss.
8. A junction temperature monitoring system for an IGBT, comprising: the calibration circuit comprises a calibration curve test circuit, a thermal resistance test circuit and a central control device; wherein the central control device comprises junction temperature monitoring device of the IGBT according to claim 7.
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| 基于饱和压降测量的 IGBT 功率模块状态评估方法研究;杨旭;《中国优秀硕士学位论文全文数据库 信息科技辑》;20130315;第23-31页，第41页 * |
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