CN112067967A - Device switching loss-based power electronic online reliability state detection device and method - Google Patents
Device switching loss-based power electronic online reliability state detection device and method Download PDFInfo
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Abstract
The invention discloses a device and a method for detecting the on-line reliability state of power electronics based on device switching loss. According to the invention, through detecting external data of the IGBT to be detected in real time, including direct-current voltage, voltage of a three-phase output end to a bus ground and three-phase output current information, under the condition that normal operation of the IGBT is not influenced and an internal structure of the IGBT is not damaged, a measuring scheme and a calculating method of total loss, diode loss and IGBT net loss of each IGBT are realized, loss is calculated through the state of the IGBT, and specific switching time does not need to be calculated. And then the reliability state detection of the IGBT chip is carried out according to the switching loss and the current, and the IGBT chip reliability state detection circuit has the advantages of few sensors, no need of transformation of an inverter and easiness in data acquisition.
Description
Technical Field
The invention relates to the field of power electronic power modules, in particular to a device switching loss-based power electronic online reliability state detection device and method.
Background
Insulated Gate Bipolar Transistors (IGBTs) have developed rapidly since the 80 s of the 20 th century, and have become standard components widely used in high-power energy transformation and transmission occasions, and play an indispensable role particularly in the fields of rail traction, aerospace, electric vehicles, smart grids, new energy power generation and the like. The complex working environment causes the working conditions to be more and more severe, and the requirements of the grade and the temperature tolerance of the power module are gradually improved. However, higher power level and operating temperature will bring greater failure risk, and the inside of the module is very easy to age and fatigue when it is subjected to high temperature and large stress for a long time, the module loss and the system stability will be greatly affected, and some parameters in practice are difficult to measure, so that online reliability state detection of the IGBT module is always a research hotspot and difficulty in the field of power electronics.
Currently, the current practice is. The on-line reliability state detection research of the IGBT module is still in a starting stage. Because heat is the leading cause of module failure, a great deal of research focuses on junction temperature extraction of the IGBT module, and the junction temperature of the IGBT chip is calculated and predicted by means of a thermal resistance network model, thermal sensitive electrical parameters, finite element analysis and the like, so that abnormal junction temperature working conditions can be found and an alarm can be given. The junction temperature extraction technology can only warn the damage condition of chip overheating failure, belongs to transient protection, but cannot probe whether the module with junction temperature within the allowable operation range is aged (for example, an IGBT gate oxygen layer is aged), so that the module in an aged state cannot be protected. The normal module is enabled to continuously bear the same high current and high voltage as the normal module, and the failure process of the normal module is accelerated. Thereby threatening the operation and operation of the entire converter system. The gate oxide layer of the IGBT is a silicon dioxide film for realizing insulation of a grid electrode and emission and collection electricity, and the gate oxide layer is very thin, has low breakdown voltage and is a relatively weak link in an IGBT chip. Therefore, it is urgently needed to develop a method for simultaneously detecting the aging of the IGBT and the junction temperature, and to realize online detection.
Disclosure of Invention
In view of the above, the present invention provides an apparatus and a method for detecting the on-line reliability of power electronics based on the switching loss of the device. Aiming at the problem that the reliability state of the IGBT is difficult to detect on line, the invention realizes the measurement scheme and the calculation method of the total loss, the diode loss and the IGBT net loss of each IGBT by detecting the external data of the IGBT to be detected in real time, including the direct-current voltage, the voltage of a three-phase output end to a bus ground and the three-phase output current information, without influencing the normal operation of the IGBT and damaging the internal structure of the IGBT. And then the reliability state detection of the IGBT chip is carried out according to the switching loss and the current.
In order to achieve the purpose, the invention adopts the following technical scheme:
a power electronic online reliability state detection device and method based on device switching loss comprises the following steps: the current information acquisition unit is used for acquiring a current signal of the IGBT to be tested; the voltage information acquisition unit is used for acquiring a voltage signal of the IGBT to be tested; the device switching state judgment unit is used for judging the IGBT switching state and collecting the time signal of the IGBT switching process to be detected; the device switching-on loss calculation unit is used for calculating the switching-on loss of the IGBT to be tested; the device turn-off loss calculation unit is used for calculating the turn-off loss of the IGBT to be tested; the device state-current-switching loss relation table unit is used for storing a pre-obtained device state-current-switching loss three-dimensional table of the IGBT to be tested; and the device reliability state judgment unit is used for judging the reliability state of the IGBT to be tested.
The current information acquisition unit and the voltage information acquisition unit are respectively connected with the device switch state judgment unit; the current information acquisition unit, the voltage information acquisition unit and the device switching state judgment unit are respectively connected with the device switching-on loss calculation unit and the device switching-off loss calculation unit, the current information acquisition unit is connected with the device reliability state judgment unit, the device switching-on loss calculation unit and the device switching-off loss calculation unit are respectively connected with the device reliability state judgment unit, and the device state-current-switching loss relation table unit and the device reliability state judgment unit.
Preferably, in the device switching loss-based power electronic online reliability state detection apparatus and method, the current information acquisition unit includes a current sensor, a current conditioning circuit, a current data storage unit, and a current information output unit, which are connected in sequence, the current information output unit is connected to the device switching state judgment unit, the device switching loss calculation unit, and meanwhile, the current information output unit is also connected to the device reliability state judgment unit; wherein:
the three current sensors are used for collecting current signals of the IGBT to be tested and acquiring corresponding current data; the current conditioning circuit is used for processing the current signal acquired by the current sensor to obtain a conditioned current signal; the current data storage unit is used for receiving and storing the conditioned current signal output by the current conditioning circuit; the current information output unit is used for calling the conditioned current signals stored in the current data storage unit, transmitting the conditioned current signals to the device turn-on loss calculation unit and the device turn-off loss calculation unit, and transmitting the conditioned current signals to the device reliability state judgment unit.
Preferably, in the device switching loss-based power electronic online reliability state detection apparatus and method, the voltage information acquisition unit includes a voltage sensor, a voltage conditioning circuit, a voltage data storage unit and a voltage output unit, which are connected in sequence, and the voltage output unit is connected with the device switching state judgment unit, the device switching-on loss calculation unit and the device switching-off loss calculation unit; wherein:
the number of the voltage sensors is four, and the four voltage sensors are used for collecting voltage signals of the IGBT to be tested and obtaining corresponding voltage data; the voltage conditioning circuit is used for processing the voltage signal acquired by the voltage sensor to obtain a conditioned voltage signal; the voltage data storage unit is used for receiving and storing the conditioned voltage signal output by the voltage conditioning circuit; the voltage output unit is used for retrieving the conditioned voltage signal stored in the voltage data storage unit and transmitting the conditioned voltage signal to the device turn-on loss calculation unit and the device turn-off loss calculation unit.
Preferably, the device-based switchIn the device and the method for detecting the online reliability state of the power electronic loss, the device switching state judgment unit is used for judging the switching state of the IGBT. Comprises a switch state judging unit; a switch state data storage unit and a switch state information output unit. The switching state judgment unit is used for judging the state of the IGBT to be tested and determining the loss according to the state, wherein the switching-on process is marked as state 1; the shutdown process is recorded as state 2; the remaining states are noted as state 0. The switching state judgment unit also receives information transmitted by the current information acquisition unit and the voltage information acquisition unit, and judges when the IGBT to be tested is in a switching-on process and a switching-off process by combining the information of the current information acquisition unit and the voltage information acquisition unit; in order to facilitate the acquisition of switching time and subsequent calculation, the state of the IGBT switching-on process is as follows: IGBT collector current i in one turn-on processCRise to 10% of its amplitude to its collector-emitter voltage vce(collector-emitter voltage) to 10% of its amplitude; the IGBT turn-off process state in the invention is as follows: IGBT collector-emitter voltage v in turn-off processceFrom the moment of rising to 10% of its amplitude to its collector current iCThe moment of dropping to 10% of its amplitude; the switch state data storage unit is used for storing the acquired switch state data; the switch state information output unit is used for transmitting the switch state data to the device turn-on loss calculation unit and the device turn-off loss calculation unit.
Preferably, in the device switching loss-based power electronic online reliability state detection apparatus and method, the device switching loss calculation unit includes a switching loss calculation unit, a data storage unit, and a switching loss data output unit, where:
the device switching loss calculation unit is used for receiving the current signal output by the current information acquisition unit, the voltage signal output by the voltage information acquisition unit and the switching state signal acquired by the device switching state judgment unit, and calculating the switching loss of the IGBT to be tested in a switching process according to the following formula (I);
wherein: eonLoss for turn-on; v. ofceIs the collector-emitter voltage; i.e. icIs the collector current; the state 1 is an IGBT (insulated gate bipolar transistor) switching-on state; state 0 is the IGBT other state.
The data storage unit is used for storing the opening loss calculated by the opening loss calculation unit; and the opening loss data output unit is used for transmitting the opening loss data to the device reliability state judgment unit.
Preferably, in the device switching loss-based power electronic online reliability state detection apparatus and method, the device switching loss calculation unit includes a switching loss calculation unit, a data storage unit, and a switching loss data output unit, wherein:
the device turn-off loss calculation unit is used for receiving the current signal output by the current information acquisition unit, the voltage signal output by the voltage information acquisition unit and the turn-off state signal acquired by the device switching state judgment unit and calculating the turn-off loss of the IGBT to be tested according to the following formula (II);
wherein: eoffTo turn off losses; v. ofceIs the collector-emitter voltage; i.e. icIs the collector current; state 2 is an IGBT off state; state 0 is the IGBT other state.
The data storage unit is used for storing the turn-off loss calculated by the turn-off loss calculation unit; and the turn-off loss data output unit is used for transmitting the turn-off loss data to the device reliability state judgment unit.
Preferably, in the device and method for detecting the online reliability state of the power electronics based on the switching loss of the device, the device state-current-switching loss relation table unit comprises a device gate oxygen aging degree-current-turn-on loss relation table unit and a device junction temperature-current-turn-off loss relation table unit; the device gate oxygen aging degree-current-turn-on loss relation table unit is used for storing a device gate oxygen aging degree-current-turn-on loss relation table in advance; the device junction temperature-current-turn-off loss relation table unit is used for storing a good device junction temperature-current-turn-off loss relation table in advance; the device gate oxygen aging degree-current-turn-on loss relation table and the device junction temperature-current-turn-off loss relation table can be obtained by using corresponding circuit topology or double-pulse experiments in advance.
Preferably, in the device and method for detecting the on-line reliability state of the power electronics based on the switching loss of the device, the device reliability state judgment unit includes a device gate oxygen aging state judgment unit and a device junction temperature state judgment unit, which are respectively used for detecting the gate oxygen aging degree and the junction temperature of the IGBT. The device reliability state judging unit is used for receiving the current signal output by the current information collecting unit, the switching-on loss signal output by the device switching-on loss calculating unit, the switching-off loss signal output by the device switching-off loss calculating unit and the device state-current-switching loss relation table information of the IGBT to be tested, which is output by the device state-current-switching loss relation table unit, and judging the reliability state of the IGBT to be tested according to the received current signal; when the gate oxygen aging degree and the junction temperature of the IGBT to be tested exceed certain threshold values, the current IGBT can be judged to be in fault, and the IGBT should be replaced or maintained in time.
Preferably, in the device switching loss-based power electronic online reliability state detection apparatus and method, the current information collection unit, the voltage information collection unit and the device switching state judgment unit may be used for judging the IGBT switching state, the conduction state and the loss separation, taking a certain phase in a three-phase inverter as an example, when the phase current is greater than zero, it indicates that the upper tube of the phase is in the working state, the measured phase voltage rising edge corresponds to the upper tube turning-on process, and the measured phase voltage falling edge corresponds to the upper tube turning-off process (because the measured voltage of the phase-to-bus ground is actually the v of the lower tube)ceVoltage); when the phase current is less than zero, the lower tube of the phase is in a working state at the moment, and the measured phase voltage is increasedThe edge corresponds to the lower pipe turn-off process, and the measured phase voltage falling edge corresponds to the lower pipe turn-on process; when the collected voltage information is maintained at the saturation voltage drop value V of the devicece,satWhen the value is large, the device is indicated to be in a current processing conducting state; when the detected voltage information is a negative value, the current module is indicated to carry out follow current by a diode; the conduction, turn-on, turn-off of the device, and the respective losses of the diode can be separated according to the above states.
In the working process of the converter, the current information acquisition unit, the voltage information acquisition unit and the turn-on time acquisition unit detect and acquire three-phase output current and three-phase output bus ground voltage signals in the converter in real time, voltage current information and switching time information of the IGBT to be detected are obtained through analysis, the information is transmitted to the device turn-on loss calculation unit and the device turn-off loss calculation unit on line, the switching loss of each IGBT to be detected is calculated by the device turn-on loss calculation unit and the device turn-off loss calculation unit, data in the device state-current-switching loss relation table unit are obtained through adjustment, the obtained switching loss and the current signals obtained through detection are substituted into the device state-current-switching loss relation table of the IGBT to be detected, and therefore the current state of the IGBT to be detected is judged.
Therefore, the device switching loss-based power electronic online reliability state detection device and method can obtain the switching loss under the condition of not influencing the normal operation of the IGBT by detecting the external data of the IGBT to be detected, including the current, the voltage and the switching time signal of the IGBT in real time, further judge the current state of the IGBT to be detected according to the switching loss and the current, calculate the loss according to the state of the IGBT and do not need to calculate the specific switching time.
Compared with the prior art, the device switching loss-based power electronic online reliability state detection device and method have the following obvious prominent substantive characteristics and obvious technical advantages:
1. the invention relates to a device switching loss-based power electronic online reliability state detection device and method, which utilize external data convenient for measurement and observation, do not influence the normal operation of a device, do not damage the internal structure of the device, and do not bring potential threats to the safety of an IGBT to be detected; moreover, the switching loss calculation formula is simple, the loss is calculated through the IGBT state, the specific switching time does not need to be calculated, the operation calculation amount of the switching loss calculation unit is small, the online real-time detection is easy to realize, and the error is not easy to occur;
2. the device and the method for detecting the on-line reliability state of the power electronics based on the switching loss of the device have high accuracy for detecting the on-line reliability state of the IGBT, so that the real-time detection of the reliability state of the IGBT can be realized on line.
Drawings
Fig. 1 is a schematic structural diagram of a power electronic online reliability state detection device based on device switching loss according to the present invention.
Fig. 2 is a structural diagram of single IGBT reliability state detection.
Fig. 3 is a schematic structural diagram of the current information acquisition unit.
Fig. 4 is a schematic structural diagram of the voltage information acquisition unit.
Fig. 5 is a schematic structural diagram of a device switching state judgment unit.
Fig. 6 is a schematic structural diagram of a device on-loss calculation unit.
Fig. 7 is a schematic structural diagram of a current information acquisition unit and a voltage information acquisition unit of the present invention connected to an inverter.
Fig. 8 is a three-dimensional graph of gate-oxide degradation versus current-turn-on loss for an exemplary device.
Fig. 9 is a three-dimensional graph of exemplary device junction temperature-current-turn-off loss relationship.
Detailed Description
In order to better explain the present invention and to facilitate an understanding of the technical solutions of the present invention, the present invention is further described in detail below with reference to the accompanying drawings and preferred embodiments. It should be understood that the following examples are illustrative only and do not represent or limit the scope of the present invention, which is defined by the claims.
The first embodiment is as follows:
referring to fig. 1, an apparatus for detecting the on-line reliability of power electronics based on the switching loss of a device, includes:
the current information acquisition unit 1 is used for acquiring a current signal of the IGBT to be tested;
the voltage information acquisition unit 2 is used for acquiring a voltage signal of the IGBT to be tested;
the device switching state judgment unit 3 is used for judging the current switching state of the IGBT to be tested;
the device switching-on loss calculation unit 4 is used for calculating the switching-on loss of the IGBT to be tested;
the device turn-off loss calculation unit 5 is used for calculating the turn-off loss of the IGBT to be tested;
the device state-current-switching loss relation table unit 6 is used for storing a pre-obtained device state-current-switching loss three-dimensional table of the IGBT to be tested;
and the device reliability state judgment unit 7 is used for judging the reliability state of the IGBT to be tested.
The current information acquisition unit 1 and the voltage information acquisition unit 2 are respectively connected with the device switch state judgment unit 3; the current information acquisition unit 1, the voltage information acquisition unit 2 and the device switching state judgment unit 3 are respectively connected with the device turn-on loss calculation unit 4 and the device turn-off loss calculation unit 5, the current information acquisition unit 1 is connected with the device reliability state judgment unit 7, the device turn-on loss calculation unit 4 and the device turn-off loss calculation unit 5 are respectively connected with the device reliability state judgment unit 7, and the device state-current-switching loss relation table unit 6 is connected with the device reliability state judgment unit 7.
In the embodiment, aiming at the problem that the reliability state of the on-line IGBT is difficult to detect, the invention realizes the measurement scheme and the calculation method of the total loss, the diode loss and the IGBT net loss of each IGBT by detecting the external data of the IGBT to be detected in real time, including the direct-current voltage, the voltage of a three-phase output end to a bus ground and the three-phase output current information, without influencing the normal operation of the IGBT and damaging the internal structure of the IGBT. And then the reliability state detection of the IGBT chip is carried out according to the switching loss and the current.
Example two:
this embodiment is substantially the same as the first embodiment, and is characterized in that:
the current information acquisition unit 1 comprises a current sensor 11, a current conditioning circuit 12, a current data storage unit 13 and a current information output unit 14 which are connected in sequence, the current information output unit 14 is connected with the device switching state judgment unit 3, the device turn-on loss calculation unit 4 and the device turn-off loss calculation unit 5, and meanwhile, the current information output unit 14 is also connected with the device reliability state judgment unit 7;
the three current sensors 11 are used for collecting current signals of the IGBT to be tested and acquiring corresponding current data; the current conditioning circuit 12 is configured to process the current signal acquired by the current sensor 11 to obtain a conditioned current signal; the current data storage unit 13 is configured to receive and store the conditioned current signal output by the current conditioning circuit; the current information output unit 14 is configured to retrieve the conditioned current signal stored in the current data storage unit 13, transmit the conditioned current signal to the device turn-on loss calculation unit 4 and the device turn-off loss calculation unit 5, and transmit the conditioned current signal to the device reliability state determination unit 7.
The voltage information acquisition unit 2 comprises a voltage sensor 21, a voltage conditioning circuit 22, a voltage data storage unit 23 and a voltage output unit 24 which are connected in sequence, wherein the voltage output unit 24 is connected with the device switching state judgment unit 3, the device turn-on loss calculation unit 4 and the device turn-off loss calculation unit 5; wherein:
the number of the voltage sensors 21 is four, and the four voltage sensors are used for collecting voltage signals of the IGBT to be tested and obtaining corresponding voltage data; the voltage conditioning circuit 22 is configured to process the voltage signal acquired by the voltage sensor 21 to obtain a conditioned voltage signal; the voltage data storage unit 23 is configured to receive and store the conditioned voltage signal output by the voltage conditioning circuit 22; the voltage output unit 24 is configured to retrieve the conditioned voltage signal stored in the voltage data storage unit 25, and transmit the conditioned voltage signal to the device turn-on loss calculation unit 4 and the device turn-off loss calculation unit 5.
The device switching state judgment unit 3 is used for judging the switching state of the IGBT, and includes a switching state judgment unit 31, a switching state data storage unit 32, and a switching state information output unit 33, which are connected in sequence, the switching state judgment unit 31 is used for judging the state of the IGBT to be tested, and determining the loss by the state, wherein the switching-on process is recorded as state 1; the shutdown process is recorded as state 2; the rest states are recorded as state 0; the switching state judgment unit 31 also receives information transmitted by the current information acquisition unit 1 and the voltage information acquisition unit 2, and judges when the IGBT to be tested is in a switching-on process and a switching-off process by combining the information of the current information acquisition unit 1 and the voltage information acquisition unit 2; in order to facilitate the acquisition of switching time and subsequent calculation, the state of the IGBT in the switching-on process is as follows: IGBT collector current i in one turn-on processCRise to 10% of its amplitude to its collector-emitter voltage vceThe moment of dropping to 10% of its amplitude; the IGBT turn-off process state is as follows: IGBT collector-emitter voltage v in turn-off processceFrom the moment of rising to 10% of its amplitude to its collector current iCThe moment of dropping to 10% of its amplitude; the switch state data storage unit 32 is used for storing the collected switch state data; the switching state information output unit 33 is configured to transmit switching state data to the device-on loss calculation unit 4 and the device-off loss calculation unit 5.
The device turn-on loss calculation unit 4 includes a turn-on loss calculation unit 41, a data storage unit 42, and a turn-on loss data output unit 43, which are connected in sequence.
The device switching loss calculation unit is used for receiving the current signal output by the current information acquisition unit 1, the voltage signal output by the voltage information acquisition unit 2 and the switching state signal acquired by the device switching state judgment unit 3, and calculating the switching loss of the IGBT to be detected in a switching process according to the following formula (I);
wherein: eonLoss for turn-on; v. ofceIs the collector-emitter voltage; i.e. icIs the collector current; the state 1 is an IGBT (insulated gate bipolar transistor) switching-on state; state 0 is the IGBT other state.
The data storage unit 42 is configured to store the turn-on loss calculated by the turn-on loss calculation unit 41; the turn-on loss data output unit 43 is configured to transmit the turn-on loss data to the device reliability state determination unit 7.
The device turn-off loss calculation unit 5 includes a device turn-off loss calculation unit 51, a data storage unit 52, and a turn-off loss data output unit 53, which are connected in sequence, wherein:
the device turn-off loss calculation unit 5 is configured to receive the current signal output by the current information acquisition unit 1, the voltage signal output by the voltage information acquisition unit 2, and the turn-off state signal acquired by the device switching state judgment unit 3, and calculate the turn-off loss of the IGBT to be tested according to the following formula (ii);
wherein: eoffTo turn off losses; v. ofceIs the collector-emitter voltage; i.e. icIs the collector current; state 2 is an IGBT off state; state 0 is the IGBT other state.
The data storage unit 52 is configured to store the turn-off loss calculated by the turn-off loss calculation unit 51; the turn-off loss data output unit 53 is configured to transmit turn-off loss data to the device reliability state judgment unit 7.
The device state-current-switching loss relation table unit 6 comprises a device gate oxygen aging degree-current-switching-on loss relation table unit 61 and a device junction temperature-current-switching-off loss relation table unit 62; the device gate oxygen aging degree-current-turn-on loss relation table unit 61 is used for storing a device gate oxygen aging degree-current-turn-on loss relation table in advance; the device junction temperature-current-turn-off loss relation table unit 62 is used for storing a good device junction temperature-current-turn-off loss relation table in advance; the device gate oxygen aging degree-current-turn-on loss relation table and the device junction temperature-current-turn-off loss relation table can be obtained by using corresponding circuit topology or double-pulse experiments in advance.
The device reliability state judgment unit 7 comprises a device gate oxygen aging state judgment unit 71 and a device junction temperature state judgment unit 72, which are respectively used for detecting the gate oxygen aging degree and the junction temperature of the IGBT chip. The device reliability state judgment unit 7 is configured to receive the current signal output by the current information collection unit 1, the turn-on loss signal output by the device turn-on loss calculation unit 4, the turn-off loss signal output by the device turn-off loss calculation unit 5, and the device state-current-switching loss relation table information of the IGBT to be tested, which is output by the device state-current-switching loss relation table unit 6, and judge the reliability state of the IGBT to be tested according to the received current signal; when the gate oxygen aging degree and the junction temperature of the IGBT to be tested exceed certain threshold values, the current IGBT can be judged to be in fault, and the IGBT should be replaced or maintained in time.
The current information collecting unit 1, the voltage information collecting unit 2, and the device switching state determining unit 3 may be used to determine the IGBT switching state, the conduction state, and the loss, in a three-phase inverter, when the phase current is greater than zero, it indicates that the upper tube of the phase is in the working state at this time, the measured phase voltage rising edge corresponds to the upper tube turn-on process, and the measured phase voltage falling edge corresponds to the upper tube turn-off process, because the measured phase-to-bus voltage is actually the v of the lower tubeceA voltage; when the phase current is less than zero, the lower pipe of the phase is in a working state at the moment, the measured rising edge of the phase voltage corresponds to the lower pipe turn-off process, and the measured falling edge of the phase voltage corresponds to the lower pipe turn-on process; when the collected voltage information is maintained at the saturation voltage drop value V of the devicece,satHigh valueHour, the device is now processing on state; when the detected voltage information is a negative value, the current module is indicated to carry out follow current by a diode; the conduction, turn-on, turn-off of the device, and the respective losses of the diode can be separated according to the above states.
Example three:
the power electronic online reliability state detection method based on the device switching loss is operated by adopting the power electronic online reliability state detection device based on the device switching loss, and comprises the following operation steps of:
numbering each IGBT in the converter so as to facilitate subsequent information acquisition and reliability state detection;
step two, the current information acquisition unit and the voltage information acquisition unit acquire voltage and current data in the converter in real time, process the data to obtain voltage and current data of each IGBT to be tested, and transmit the data to the device switching state judgment unit, the device switching-on loss calculation unit and the device switching-off loss calculation unit; the current information acquisition unit also transmits data to the device reliability state judgment unit;
step three, the device switching state judgment unit determines the switching time according to claim 4, and transmits the data to the device turn-on loss calculation unit and the device turn-off loss calculation unit;
step four, the device turn-on loss calculation unit and the device turn-off loss calculation unit calculate the turn-on loss and the turn-off loss of each IGBT to be tested according to the voltage and current data and the switching time data of each IGBT to be tested;
step five, the device reliability state judgment unit acquires the current information acquired by the current information acquisition unit and the switching loss information calculated by the device turn-on loss calculation unit and the device turn-off loss calculation unit, and calls pre-calibrated information stored in the device state-current-switching loss unit so as to judge the reliability state of the IGBT to be tested;
and step six, repeatedly executing the step two to the step five, and circularly detecting the loss information of each IGBT in the converter so as to judge the reliable property of the IGBT.
The method utilizes external data which is convenient to measure and observe, does not influence the normal operation of the device, does not damage the internal structure of the device, and does not bring potential threat to the safety of the IGBT to be measured; and the switching loss calculation formula is simple, the loss is calculated through the IGBT state, the specific switching time does not need to be calculated, the operation calculation amount of the switching loss calculation unit is small, the online real-time detection is easy to realize, and the error is not easy to occur. The method has high accuracy for detecting the IGBT online reliability state, so that the IGBT reliability state can be detected online in real time.
Example four:
an apparatus and method for detecting the on-line reliability of power electronics based on the switching loss of a device is shown in fig. 1, and includes: the device comprises a current information acquisition unit 1, a voltage information acquisition unit 2, a device switch state judgment unit 3, a device turn-on loss calculation unit 4, a device turn-off loss calculation unit 5, a device state-current-switch loss relation table unit 6 and a device reliability state judgment unit 7, wherein the current information acquisition unit 1 and the voltage information acquisition unit 2 are respectively connected with the device switch state judgment unit 3; the current information acquisition unit 1, the voltage information acquisition unit 2 and the device switching state judgment unit 3 are respectively connected with the device switching loss calculation unit 4 and the device turn-off loss calculation unit 5, the current information acquisition unit 1 is connected with the device reliability state judgment unit 6, the device turn-on loss calculation unit 4 and the device turn-off loss calculation unit 5 are respectively connected with the device reliability state judgment unit 7, and the device state-current-switching loss relation table unit 6 is connected with the device reliability state judgment unit 7.
In the device switching loss-based power electronic online reliability state detection device and method, the current information acquisition unit 1 is used for detecting and acquiring current signals of the IGBT to be detected.
As shown in fig. 2, the current information acquisition unit 1 includes three current sensors 11, a current conditioning circuit 12, a current data storage unit 13, and a current output unit 14, which are connected in sequence, the current output unit 14 is connected to the device switching state determination unit 3, the device turn-on loss calculation unit 4, and the device turn-off loss calculation unit 5, and the current output unit 14 is also connected to the device reliability state determination unit 7.
And the current sensor 11 is used for acquiring a current signal of the IGBT to be tested and acquiring corresponding current information. In order to facilitate accurate calculation of the switching loss of the IGBT, the current sensor 11 is preferably a high-precision, high-fidelity, and high-bandwidth current sensor. For a high precision current sensor 11, the current sensing error should typically be less than 1% of the nominal value.
The current conditioning circuit 12 is configured to process the current signal acquired by the current sensor 11 to obtain a conditioned current signal. Similarly, current conditioning circuit 12 also requires high accuracy, and typically the current sensing error should be less than 1% of the nominal value.
The current data storage unit 13 is used for receiving and storing the conditioned current signal output by the current conditioning circuit 12.
The current output unit 14 is configured to retrieve the conditioned current signal stored in the current data storage unit 13, transmit the conditioned current signal to the device switching state determination unit 3, the device turn-on loss calculation unit 4, and the device turn-off loss calculation unit 5, and transmit the conditioned current signal to the device reliability state determination unit 7.
In the device switching loss-based power electronic online reliability state detection device and method, the voltage information acquisition unit 2 is used for detecting a voltage signal of the IGBT to be detected.
The voltage information collecting unit 2, as shown in fig. 3, includes four voltage sensors 21, a voltage conditioning circuit 22, a voltage data storage unit 23, and a voltage output unit 24, which are connected in sequence. The voltage output unit 24 is connected to the device switching state judgment unit 3, the device turn-on loss calculation unit 4, and the device turn-off loss calculation unit 5.
The voltage sensor 21 is used for acquiring a voltage signal of the IGBT to be tested and obtaining corresponding voltage information. In order to facilitate accurate calculation of the turn-on loss of the IGBT, the voltage sensor 21 is preferably a high-precision, high-fidelity, and high-bandwidth voltage sensor. For a high precision voltage sensor 11, the voltage detection error should typically be less than 1% of the nominal value.
The voltage conditioning circuit 22 is configured to process the voltage signal collected by the voltage sensor 21 to obtain a conditioned voltage signal. Similarly, the voltage conditioning circuit 22 also requires high accuracy, and typically the voltage detection error should be less than 1% of the nominal value.
The voltage data storage unit 23 is used for receiving and storing the conditioned voltage signal output by the voltage conditioning circuit 22.
The voltage output unit 24 is configured to retrieve the conditioned voltage signal stored in the voltage data storage unit 23, and transmit the conditioned voltage signal to the device switching state determination unit 3, the device turn-on loss calculation unit 4, and the device turn-off loss calculation unit 5.
In the above device switching loss-based power electronic online reliability state detection apparatus and method, the device switching state judgment unit 3 is used for judging the switching state of the IGBT and collecting the switching process time, and includes the switching state judgment unit 31 for judging the switching state and the conducting state of the IGBT; a switch state data storage unit 32 and a switch state information output unit 33. The switching state judgment unit 31 is used for judging the state of the IGBT to be tested, and determining the loss according to the state, wherein the switching-on process is recorded as state 1; the shutdown process is recorded as state 2; the remaining states are noted as state 0. The switching state judgment unit 3 also receives information transmitted by the current information acquisition unit 1 and the voltage information acquisition unit 2, and judges when the IGBT to be tested is in a switching-on process and a switching-off process by combining the information of the current information acquisition unit and the voltage information acquisition unit; in order to facilitate the acquisition of switching time and subsequent calculation, the state of the IGBT switching-on process is as follows: IGBT collector current i in one turn-on processCRise to 10% of its amplitude to its collector-emitter voltage vce(collector-emitter voltage) to 10% of its amplitude; the IGBT turn-off process state in the invention is as follows: IGBT collector-emitter voltage v in turn-off processceFrom rising to 10% of its amplitudeTo its collector current iCThe moment of dropping to 10% of its amplitude; the switch state data storage unit is used for storing the acquired switch state data; the switch state information output unit is used for transmitting the switch state data to the device turn-on loss calculation unit and the device turn-off loss calculation unit.
In the above device switching loss-based power electronic online reliability state detection apparatus and method, the device turn-on loss calculation unit 4 includes a turn-on loss calculation unit 41, a turn-on loss data storage unit 42, and a turn-on loss data output unit 43, where:
the device turn-on loss calculation unit 41 is configured to receive the current signal output by the current information acquisition unit 1, the voltage signal output by the voltage information acquisition unit 2, and the turn-on process time signal acquired by the device switching state judgment unit 3, and calculate the turn-on loss of the IGBT to be tested according to the following formula (i);
wherein: eonLoss for turn-on; v. ofceIs the collector-emitter voltage; i.e. icIs the collector current; the state 1 is an IGBT (insulated gate bipolar transistor) switching-on state; state 0 is the IGBT other state.
The opening loss data storage unit 42 is used for storing the opening loss calculated by the opening loss calculation unit; the on-loss data output unit 43 is used to transmit the on-loss data to the device state judgment unit 7.
In the above device switching loss-based power electronic online reliability state detection apparatus and method, the device turn-off loss calculation unit 5 includes a turn-off loss calculation unit 51, a turn-off loss data storage unit 52, and a turn-off loss data output unit 53, wherein
The device turn-off loss calculation unit 5 is used for receiving the current signal output by the current information acquisition unit 1, the voltage signal output by the voltage information acquisition unit 2 and the turn-off process time signal acquired by the device switch state judgment unit 3, and calculating the turn-off loss of the IGBT to be tested according to the following formula (II);
wherein: eoffTo turn off losses; v. ofceIs the collector-emitter voltage; i.e. icIs the collector current; state 2 is an IGBT off state; state 0 is the IGBT other state.
The turn-off loss data storage unit 52 is used for storing the turn-off loss data calculated by the turn-off loss calculation unit; the turn-off loss data output unit 53 is used to transmit loss data to the device state judgment unit 7.
In the above device switching loss-based power electronic online reliability state detection apparatus and method, the device state-current-switching loss relation table unit 6 includes a device gate oxygen aging degree-current-turn-on loss relation table unit 61 and a device junction temperature-current-turn-off loss relation table unit 62; the device gate oxygen aging degree-current-turn-on loss relation table unit 61 is used for storing a device gate oxygen aging degree-current-turn-on loss relation table in advance; the device state-current-switching loss relation table unit 62 is used for storing a device state-current-switching loss relation table in advance; the device gate oxygen aging degree-current-turn-on loss relation table and the device junction temperature-current-turn-off loss relation table can be obtained by using corresponding circuit topology or double-pulse experiments in advance.
In the above device switching loss-based power electronic online reliability state detection apparatus and method, the device reliability state determination unit 7 includes a device gate oxygen aging state determination unit 71 and a device junction temperature state determination unit 72, which are respectively used for detecting the gate oxygen aging degree and the junction temperature of the IGBT chip. The device reliability state judgment unit 7 is used for receiving the current signal output by the current information acquisition unit 1, the turn-on loss signal output by the device turn-on loss calculation unit 4, the turn-off loss signal output by the device turn-off loss calculation unit 5 and the device state-current-switching loss relation table information of the IGBT to be tested, which is output by the device state-current-switching loss relation table unit 6, and judging the reliability state of the IGBT to be tested according to the received current signal; when the gate oxygen aging degree and the junction temperature of the IGBT to be tested exceed certain threshold values, the current IGBT can be judged to be in fault, and the IGBT should be replaced or maintained in time.
In the actual work of the three-phase inverter, the current information acquisition unit 1, the voltage information acquisition unit 2 and the device switching state judgment unit 3 detect and acquire three output currents of the three-phase inverter and the voltage of a bus to ground at a three-phase output end and the voltage information of a direct current side in real time, the signals are processed and transmitted to the device switching-on loss calculation unit 4 and the device switching-off loss calculation unit 5 on line, the switching loss of each IGBT to be detected is calculated by the device switching-on loss calculation unit 4 and the device switching-off loss calculation unit 5, the obtained switching loss and the detected current signal are substituted into the data corresponding to the IGBT to be detected by calling the data in the device state-current-switching-on loss relation table unit 6, and the device state judgment unit 7 judges the reliability state of the IGBT to be detected through table lookup.
To help better understand the structure and operation principle of the above-mentioned device switching loss based power electronic online reliability state detection apparatus and method, a typical three-phase inverter shown in fig. 7 will be described in detail below.
As shown in fig. 7, VT1 to VT6 represent 6 IGBT devices of a three-phase inverter, and VD1 to VD6 are anti-parallel diodes of each switching IGBT device, respectively, and constitute six groups of switching devices; each phase is provided with an upper group of switching devices and a lower group of switching devices which are connected to two ends of a direct current bus; and the two sets of switching devices on each phase do not operate simultaneously. A. B, C are three-phase outputs, which are conventional three-phase inverter circuits.
As shown in FIG. 7, TVBUSThe TVa, the TVb and the TVc are respectively four corresponding voltage sensors in the three-phase inverter and are respectively used for collecting bus voltage and voltage information of three-phase output to bus ground; three current sensors corresponding to the three-phase inverter are respectively used for acquiring three-phase output current information, the load is arranged on the right side, and in practical application, the three current sensors are generally negative in resistance and inductanceAnd (4) loading.
As mentioned above, the current information acquisition unit 1 processes the acquired three-phase output current information to obtain current information of the IGBT to be tested; the voltage information acquisition unit 2 processes the acquired three-phase output ground voltage information of the bus to obtain the voltage information of the IGBT to be tested; due to the working principle of three-phase inversion, only one IGBT device on the same phase is in a working state at the same time, and the phase current information acquired by the current information acquisition unit 1 is the current information of the IGBT device; the three-phase output voltage information to the bus voltage information collected by the voltage information collecting unit 2 is actually v of each phase lower tubeceInformation, but v of the pipeceThe information may be the bus voltage minus the v of the lower tubeceThus obtaining the product.
The device switching state judgment unit 3 can collect and judge the switching state and the conduction state of the IGBT to be detected, and the switching-on loss, the switching-off loss, the conduction loss and the diode loss of the IGBT can be separated by combining the current information collected by the current information collection unit 1 and the voltage information collected by the voltage information collection unit 2. Taking a certain phase in a three-phase inverter as an example, when the phase current is greater than zero, the upper tube of the phase is in a working state at the moment, the measured rising edge of the phase voltage corresponds to an upper tube opening process, and the measured falling edge of the phase voltage corresponds to an upper tube closing process; when the phase current is less than zero, the lower pipe of the phase is in a working state at the moment, the measured rising edge of the phase voltage corresponds to the lower pipe turn-off process, and the measured falling edge of the phase voltage corresponds to the lower pipe turn-on process; when the collected voltage information is maintained at the saturation voltage drop value V of the devicece,satWhen the value is large, the device is indicated to be in a current processing conducting state; when the detected voltage information is a negative value, the current module is indicated to carry out follow current by a diode; the conduction, turn-on, turn-off of the device, and the respective losses of the diode can be separated according to the above states. And the device switching state judging unit 3 can determine the switching process time according to the voltage information acquired by the voltage information acquiring unit 2, and the IGBT switching process state in the invention is as follows: IGBT collector current i in one turn-on processCUp to 10% of its amplitudeCollector-emitter voltage vce(collector-emitter voltage) to 10% of its amplitude; the IGBT turn-off process state in the invention is as follows: IGBT collector-emitter voltage v in turn-off processceFrom the moment of rising to 10% of its amplitude to its collector current iCDown to 10% of its amplitude.
By the aid of the method, current information and voltage information of each IGBT to be tested can be obtained, and the switching state and switching time of the IGBT to be tested are judged according to the voltage and current information; the losses of the IGBT can be separated, and the turn-on loss information and the turn-off loss information required by the present invention are calculated by the device turn-on loss calculation unit 4 and the device turn-off loss calculation unit 5.
Next, a phase a upper and lower IGBT (VT1 and VT4) in fig. 7 will be described as an example. When the current is larger than zero, the A-phase upper tube IGBT (VT1) works, the measured rising edge of the A-phase voltage corresponds to the turn-on process of the upper tube IGBT (VT1), and the measured falling edge of the A-phase voltage corresponds to the turn-off process of the upper tube IGBT (VT 1); when the current is less than zero, the A-phase lower tube IGBT (VT4) works, the measured rising edge of the A-phase voltage corresponds to the turn-off process of the lower tube IGBT (VT4), and the measured falling edge of the A-phase voltage corresponds to the turn-on process of the lower tube IGBT (VT 4). According to the voltage and current information of each IGBT in the turn-on and turn-off processes, the working state of the IGBT to be tested can be judged, the turn-on time and the turn-off time of the IGBT can be obtained, and the turn-on loss and the turn-off loss can be obtained by combining the voltage and current information.
Before the device switching loss-based power electronic online reliability state detection device and method are used, calibration of device state-current-switching loss is needed, and one of the two data tables comprises: the device gate oxygen aging degree-current-turn-on loss three-dimensional table and the device junction temperature-current-turn-off loss three-dimensional table can be calibrated by corresponding circuit topology or a double-pulse test circuit.
The circuit used is still the three-phase inverter circuit in fig. 7, and here, the upper and lower two tubes in the double pulse test are formed by VT1 and VT6, and VT6 is the IGBT tube to be detected for illustration. Under the condition of keeping the ambient temperature at 25 ℃, an inductive load is connected with VT1 in parallel, and a certain direct current load current i (namely, a certain test current) is generated by controlling a gate trigger signal of an IGBT tube VT6 to be detected. Resistors with different sizes are connected in parallel between IGBT gate emitters to simulate gate oxygen aging degrees with different degrees (when an IGBT gate oxygen layer is aged, a conductive path is formed inside an oxidation layer, part of charges flow to an emission set through a gate electrode, the turn-on speed of the IGBT can be reduced, the turn-on loss is increased, the smaller the parallel resistor is, the worse the gate oxygen layer is aged, and the healthy state is realized when no resistor is connected in parallel), the situation that the rest IGBT tubes (VT1, VT2, VT3, VT4 and VT5) are in a turn-off state (a double-pulse test circuit does not work and only diodes connected in parallel in an anti-parallel mode are used) is ensured, then double pulses are applied to VT6, and voltage and current information of the IGBT tube VT6 to be detected is.
By selecting IGBT grid pulses with different widths, test currents with different sizes flow through the IGBT tube VT6 to be detected, and the process is repeated to carry out current scanning; different gate oxygen aging degrees are set for scanning by connecting resistors with different resistance values in parallel, gate oxygen aging scanning is achieved, the opening time is collected, the opening loss is calculated, and therefore a three-dimensional gate oxygen aging degree-current-switching loss table of the IGBT tube VT6 to be detected is obtained.
According to the same circuit, the healthy IGBT is heated to different temperatures, and a device junction temperature-current-turn-off loss three-dimensional table can be calibrated. And two calibrated three-dimensional data are stored in the device state-current-switching loss relation table unit 6 in advance.
In conclusion, three-dimensional data of device junction temperature-current-turn-off loss can be obtained, and turn-on loss and turn-off loss of the IGBT to be tested can be obtained on line. The device reliability state judgment unit 7 can obtain the gate oxygen aging degree of the IGBT to be tested by calling the turn-on loss information of the IGBT to be tested and comparing the current information with the gate oxygen aging degree-current-switching loss three-dimensional data; the junction temperature state of the IGBT to be tested can be obtained by taking turn-off loss information of the IGBT to be tested and three-dimensional comparison between current information at the moment and junction temperature-current-turn-off loss of the device.
The device and the method for detecting the on-line reliability state of the power electronics based on the switching loss of the device utilize external data which is convenient to measure and observe, do not influence the normal operation of the device, do not damage the internal structure of the device, and do not bring potential threats to the safety of the IGBT to be detected; and the switching loss calculation formula is simple, the loss is calculated through the IGBT state, the specific switching time does not need to be calculated, the operation calculation amount of the switching loss calculation unit is small, the online real-time detection is easy to realize, and the error is not easy to occur. The device and the method for detecting the on-line reliability state of the power electronics based on the switching loss of the device have high accuracy for detecting the on-line reliability state of the IGBT, so that the real-time detection of the reliability state of the IGBT can be realized on line.
It will thus be seen that the objects of the invention have been fully and effectively accomplished. It should be understood that the above-mentioned embodiments are only exemplary of the present invention, and are not intended to limit the present invention, and any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention. The functional and structural principles of the present invention have been shown and described in the embodiments, and the embodiments may be modified without departing from the principles. The invention includes all modifications encompassed within the spirit and scope of the claims.
Claims (10)
1. An on-line reliability state detection device for power electronics based on device switching losses, comprising:
the current information acquisition unit (1) is used for acquiring a current signal of the IGBT to be tested;
the voltage information acquisition unit (2) is used for acquiring a voltage signal of the IGBT to be tested;
the device switching state judgment unit (3) is used for judging the current switching state of the IGBT to be tested;
the device switching-on loss calculation unit (4) is used for calculating the switching-on loss of the IGBT to be tested;
the device turn-off loss calculation unit (5) is used for calculating the turn-off loss of the IGBT to be tested;
the device state-current-switching loss relation table unit (6) is used for storing a pre-obtained device state-current-switching loss three-dimensional table of the IGBT to be tested;
the device reliability state judgment unit (7) is used for judging the reliability state of the IGBT to be tested;
the current information acquisition unit (1) and the voltage information acquisition unit (2) are respectively connected with the device switch state judgment unit (3); the current information acquisition unit (1), the voltage information acquisition unit (2) and the device switching state judgment unit (3) are respectively connected with the device turn-on loss calculation unit (4) and the device turn-off loss calculation unit (5), the current information acquisition unit (1) is connected with the device reliability state judgment unit (7), the device turn-on loss calculation unit (4) and the device turn-off loss calculation unit (5) are respectively connected with the device reliability state judgment unit (7), and the device state-current-switching loss relation table unit (6) is connected with the device reliability state judgment unit (7).
2. The device switching loss-based power electronic online reliability state detection device according to claim 1, wherein the current information acquisition unit (1) comprises a current sensor (11), a current conditioning circuit (12), a current data storage unit (13) and a current information output unit (14) which are connected in sequence, the current information output unit (14) is connected with the device switching state judgment unit (3), the device turn-on loss calculation unit (4) and the device turn-off loss calculation unit (5), and meanwhile, the current information output unit (14) is also connected with the device reliability state judgment unit (7);
the three current sensors (11) are used for acquiring current signals of the IGBT to be tested and acquiring corresponding current data; the current conditioning circuit (12) is used for processing the current signal acquired by the current sensor (11) to obtain a conditioned current signal; the current data storage unit (13) is used for receiving and storing the conditioned current signal output by the current conditioning circuit; the current information output unit (14) is configured to retrieve the conditioned current signal stored in the current data storage unit (13), transmit the conditioned current signal to the device turn-on loss calculation unit (4) and the device turn-off loss calculation unit (5), and transmit the conditioned current signal to the device reliability state determination unit (7).
3. The device switching loss-based power electronic online reliability state detection device according to claim 1, wherein the voltage information acquisition unit (2) comprises a voltage sensor (21), a voltage conditioning circuit (22), a voltage data storage unit (23) and a voltage output unit (24) which are connected in sequence, and the voltage output unit (24) is connected with the device switching state judgment unit (3), the device turn-on loss calculation unit (4) and the device turn-off loss calculation unit (5); wherein:
the four voltage sensors (21) are used for collecting voltage signals of the IGBT to be tested and acquiring corresponding voltage data; the voltage conditioning circuit (22) is used for processing the voltage signal acquired by the voltage sensor (21) to obtain a conditioned voltage signal; the voltage data storage unit (23) is used for receiving and storing the conditioned voltage signal output by the voltage conditioning circuit (22); the voltage output unit (24) is used for retrieving the conditioned voltage signal stored in the voltage data storage unit (25) and transmitting the conditioned voltage signal to the device turn-on loss calculation unit (4) and the device turn-off loss calculation unit (5).
4. The device switching loss-based power electronic online reliability state detection device as claimed in claim 1, wherein the device switching state judgment unit (3) is used for judging the switching state of the IGBT, and comprises a switching state judgment unit (31), a switching state data storage unit (32) and a switching state information output unit (33) which are connected in sequence, the switching state judgment unit (31) is used for judging the state of the IGBT to be tested, and determining the loss according to the state, wherein the switching-on process is recorded as state 1; the shutdown process is recorded as state 2; the rest states are recorded as state 0; the switch state judging unit (31) also receives the current information acquisition unit (1) and the voltage information acquisition unit (2) transmittedThe information is combined to judge when the IGBT to be tested is in the switching-on process and the switching-off process; in order to facilitate the acquisition of switching time and subsequent calculation, the state of the IGBT in the switching-on process is as follows: IGBT collector current i in one turn-on processCRise to 10% of its amplitude to its collector-emitter voltage vceThe moment of dropping to 10% of its amplitude; the IGBT turn-off process state is as follows: IGBT collector-emitter voltage v in turn-off processceFrom the moment of rising to 10% of its amplitude to its collector current iCThe moment of dropping to 10% of its amplitude; the switch state data storage unit (32) is used for storing collected switch state data; the switch state information output unit (33) is used for transmitting switch state data to the device turn-on loss calculation unit (4) and the device turn-off loss calculation unit (5).
5. The device switching loss-based power electronic online reliability state detection apparatus according to claim 1, wherein the device turn-on loss calculation unit (4) comprises a turn-on loss calculation unit (41), a data storage unit (42) and a turn-on loss data output unit (43) which are connected in sequence;
the device switching loss calculation unit is used for receiving the current signal output by the current information acquisition unit (1), the voltage signal output by the voltage information acquisition unit (2) and the switching state signal acquired by the device switching state judgment unit (3), and calculating the IGBT switching loss in a switching process to be measured according to the following formula (I);
wherein: eonLoss for turn-on; v. ofceIs the collector-emitter voltage; i.e. icIs the collector current; the state 1 is an IGBT (insulated gate bipolar transistor) switching-on state; state 0 is the other state of the IGBT;
the data storage unit (42) is used for storing the opening loss calculated by the opening loss calculation unit (41); and the turn-on loss data output unit (43) is used for transmitting the turn-on loss data to the device reliability state judgment unit (7).
6. The device switching loss-based power electronic online reliability state detection apparatus according to claim 1, wherein the device turn-off loss calculation unit (5) comprises a device turn-off loss calculation unit (51), a data storage unit (52), and a turn-off loss data output unit (53) connected in sequence, wherein:
the device turn-off loss calculation unit (5) is used for receiving the current signal output by the current information acquisition unit (1), the voltage signal output by the voltage information acquisition unit (2) and the turn-off state signal acquired by the device switch state judgment unit (3), and calculating the turn-off loss of the IGBT to be tested according to the following formula (II);
wherein: eoffTo turn off losses; v. ofceIs the collector-emitter voltage; i.e. icIs the collector current; state 2 is an IGBT off state; state 0 is the other state of the IGBT;
the data storage unit is used for storing the turn-off loss calculated by the turn-off loss calculation unit; the turn-off loss data output unit is used for transmitting the turn-off loss data to the device reliability state judgment unit (7).
7. The device switching loss-based power electronic online reliability state detection device as claimed in claim 1, wherein the device state-current-switching loss relation table unit (6) comprises a device gate oxygen aging degree-current-turn-on loss relation table unit (61) and a device junction temperature-current-turn-off loss relation table unit (62); the device gate oxygen aging degree-current-turn-on loss relation table unit (61) is used for storing a device gate oxygen aging degree-current-turn-on loss relation table in advance; the device junction temperature-current-turn-off loss relation table unit (62) is used for storing a good device junction temperature-current-turn-off loss relation table in advance; the device gate oxygen aging degree-current-turn-on loss relation table and the device junction temperature-current-turn-off loss relation table can be obtained by using corresponding circuit topology or double-pulse experiments in advance.
8. The device switching loss-based power electronic online reliability state detection device as claimed in claim 1, wherein the device reliability state judgment unit (7) comprises a device gate oxygen aging state judgment unit (71) and a device junction temperature state judgment unit (72) for detecting the gate oxygen aging degree and the junction temperature of the IGBT chip respectively; the device reliability state judging unit (7) is used for receiving the current signal output by the current information collecting unit (1), the switching-on loss signal output by the device switching-on loss calculating unit (4), the switching-off loss signal output by the device switching-off loss calculating unit (5) and the device state-current-switching loss relation table information of the IGBT to be tested, which is output by the device state-current-switching loss relation table unit (6), and judging the reliability state of the IGBT to be tested according to the device state-current-switching loss relation table information; when the gate oxygen aging degree and the junction temperature of the IGBT to be tested exceed certain threshold values, the current IGBT can be judged to be in fault, and the IGBT should be replaced or maintained in time.
9. The device switching loss-based power electronic online reliability state detection device as claimed in claim 1, wherein the current information collection unit (1), the voltage information collection unit (2) and the device switching state judgment unit (3) can be used for IGBT switching state, conduction state judgment and loss separation, in a three-phase inverter, when the phase current is greater than zero, the upper tube of the phase is in a working state, the measured phase voltage rising edge corresponds to an upper tube opening process, and the measured phase voltage falling edge corresponds to an upper tube closing process, because the measured voltage of the phase-to-bus ground is actually the v of the lower tubeceA voltage; when the phase current is less than zero, the lower pipe of the phase is in a working state at the moment, the measured rising edge of the phase voltage corresponds to the lower pipe turn-off process, and the measured falling edge of the phase voltage corresponds to the lower pipe turn-on process; when it is collectedThe voltage information is maintained at the saturation voltage drop value V of the devicece,satWhen the value is large, the device is indicated to be in a current processing conducting state; when the detected voltage information is a negative value, the current module is indicated to carry out follow current by a diode; the conduction, turn-on, turn-off of the device, and the respective losses of the diode can be separated according to the above states.
10. A power electronic online reliability state detection method based on device switching loss, which is operated by the power electronic online reliability state detection device based on device switching loss of claim 1, and is characterized by comprising the following operation steps:
numbering each IGBT in the converter so as to facilitate subsequent information acquisition and reliability state detection;
step two, the current information acquisition unit and the voltage information acquisition unit acquire voltage and current data in the converter in real time, process the data to obtain voltage and current data of each IGBT to be tested, and transmit the data to the device switching state judgment unit, the device switching-on loss calculation unit and the device switching-off loss calculation unit; the current information acquisition unit also transmits data to the device reliability state judgment unit;
step three, the device switching state judgment unit determines the switching time according to claim 4, and transmits the data to the device turn-on loss calculation unit and the device turn-off loss calculation unit;
step four, the device turn-on loss calculation unit and the device turn-off loss calculation unit calculate the turn-on loss and the turn-off loss of each IGBT to be tested according to the voltage and current data and the switching time data of each IGBT to be tested;
step five, the device reliability state judgment unit acquires the current information acquired by the current information acquisition unit and the switching loss information calculated by the device turn-on loss calculation unit and the device turn-off loss calculation unit, and calls pre-calibrated information stored in the device state-current-switching loss unit so as to judge the reliability state of the IGBT to be tested;
and step six, repeatedly executing the step two to the step five, and circularly detecting the loss information of each IGBT in the converter so as to judge the reliability state of the IGBT.
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