CN110658435B - IGBT junction temperature monitoring device and method - Google Patents
IGBT junction temperature monitoring device and method Download PDFInfo
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- CN110658435B CN110658435B CN201910829782.2A CN201910829782A CN110658435B CN 110658435 B CN110658435 B CN 110658435B CN 201910829782 A CN201910829782 A CN 201910829782A CN 110658435 B CN110658435 B CN 110658435B
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2608—Circuits therefor for testing bipolar transistors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2608—Circuits therefor for testing bipolar transistors
- G01R31/2619—Circuits therefor for testing bipolar transistors for measuring thermal properties thereof
Abstract
The IGBT junction temperature monitoring device and method utilizes the relation between the peak value of the reverse recovery current of a diode and the junction temperature of the diode and combines an IGBT module thermal impedance network model to realize the indirect monitoring of the junction temperature of an IGBT chip. The relation that the IGBT collector opening current overshoot is equal to the reverse recovery current of the pair of anti-parallel diodes is utilized. The junction temperature of the IGBT module is monitored on line by monitoring the overshoot of the opening current of the collector, the monitoring method has no interference to the normal work of the circuit, and only a sampling circuit needs to be added.
Description
Technical Field
The invention belongs to the field of electrical engineering, relates to a state monitoring scheme of a power electronic converter, and particularly relates to an IGBT junction temperature monitoring device and method.
Background
Power electronic converters are widely used in industrial life, and power electronic converters often play a very important role in the whole system, and system shutdown caused by power electronic converter failure is often catastrophic. A huge economic loss will be incurred. Therefore, it is very important to study the reliability of the power electronic converter, and the core component of the power electronic converter is a power electronic switching device, the IGBT accounts for the highest percentage of all the switching devices, and it is very important to monitor the reliability and the state of the medium-large capacity IGBT module. Failure or aging of IGBTs is often caused by fatigue caused by short over-temperature or long thermal cycling, power cycling. Therefore, studying the temperature of the IGBT is essential to evaluate the reliability of the IGBT module.
The operating state of the IGBT can be mastered in real time by monitoring the temperature of the IGBT on line, the temperature of the system can be adjusted by the heat management based on the temperature on-line monitoring, the fatigue damage caused by the temperature fluctuation of the system or the higher temperature is reduced, the over-temperature failure of the module is avoided, the healthy operation time of the IGBT module is predicted, the healthy state of the IGBT module is monitored, the economic loss of irregular maintenance is reduced, the fatigue damage of the module is reduced, and the operation life is prolonged.
Scholars at home and abroad carry out a great deal of research on monitoring the temperature of the IGBT module, and the proposed method mainly comprises the following steps: physical contact, physical non-contact, thermodynamic model estimation and indirect measurement of thermosensitive inductive parameters are in category 4. Of which the most interesting are monitoring methods based on temperature-sensitive electrical parameters. Most of the existing thermosensitive electrical parameter monitoring methods have more or less on-line application problems or low detection precision.
Physical contact method: the response time is long, the measuring speed is slow, the thermosensitive sensor needs to be close to the chip as far as possible, and the complete close to the chip is difficult to realize in practice. Physical non-contact: the cost is high, the IGBT package needs to be opened, and the on-line monitoring is difficult to realize in practice. Estimating by a thermodynamic model: the model parameters change as the device ages, and thus the temperature estimation accuracy changes as the device ages. The method relates to a plurality of thermosensitive electrical parameters, but the method proposed at present is still difficult to realize high-precision, non-invasive and high-sensitivity monitoring.
Disclosure of Invention
The invention aims to provide a method for monitoring the junction temperature of an IGBT (insulated gate bipolar translator) by using collector turn-on current overshoot aiming at the problem of the conventional junction temperature monitoring method. And indirectly monitoring the junction temperature of the IGBT chip by utilizing the relation between the peak value of the reverse recovery current of the diode and the junction temperature of the diode and combining with the thermal impedance network model of the IGBT module.
The invention is realized by adopting the following technical scheme:
a first aspect of the present invention provides an IGBT junction temperature monitoring apparatus, including: the device comprises a direct-current power supply, an IGBT module, a first current monitoring circuit, a second current monitoring circuit, a voltage isolation measuring circuit and a DSP/MCU digital processing unit;
the IGBT module comprises a first IGBT and a second IGBT which are connected in series, and each IGBT is connected with a diode in parallel;
the first current monitoring circuit measures the overshoot of the collector opening current of the first IGBT, the second current monitoring circuit measures the overshoot of the collector opening current of the second IGBT, and the measured value is transmitted to the DSP/MCU digital processing unit;
the voltage isolation measuring circuit is used for measuring the collector opening voltage and the collector current and transmitting the measured value to the DSP/MCU digital processing unit;
and the DSP/MCU digital processing unit respectively calculates junction temperatures of the first IGBT and the second IGBT according to the received measured values.
Further, the junction temperature T of the first IGBT and the junction temperature T of the second IGBTIGBT(t) is calculated from the following formula:
wherein, PIGBT(t) is the instantaneous heating power of IGBT, the thermal impedance Z1、Z2、Z3Respectively the self-impedance of the IGBT to air, the self-impedance of the diode to air and the mutual impedance between the IGBT and the diode, TAIR(t) is the temperature of the air environment, and T (t) is the diode junction temperature.
Further, the thermal impedance Z1、Z2、Z3And obtaining the data through a thermal test and storing the data in the DSP/MCU digital processing unit.
Further, under the working conditions of different collector and emitter voltages and collector currents, the collector opening current overshoot values of different diode junction temperatures are tested, the least square method is adopted for fitting, the relation between the diode junction temperature and the collector opening current overshoot is obtained, and the corresponding diode junction temperature is obtained according to the measured collector opening current overshoot.
Further, when the overshoot of the collector turn-on current is the overshoot of the collector turn-on current of the first IGBT, the obtained junction temperature t (t) of the diode is the junction temperature of the diode connected in parallel with the second IGBT; and when the overshoot of the collector opening current is equal to the overshoot of the collector opening current of the second IGBT, the obtained diode junction temperature T (t) is the junction temperature of the diode connected in parallel with the first IGBT.
A second aspect of the present invention provides an IGBT junction temperature monitoring method, which performs monitoring according to the foregoing apparatus, and includes the following steps:
measuring the overshoot of the collector turn-on current, the collector turn-on voltage and the collector current of the first IGBT and the second IGBT in real time to calculate the junction temperature of the diode;
setting a thermal impedance network model formed by an IGBT, a parallel diode thereof and the environment in the IGBT module, and measuring each thermal impedance;
measuring IGBT instantaneous heating power PIGBT(T), and the temperature T of the air environmentAIR(t)；
And respectively calculating junction temperatures of the first IGBT and the second IGBT according to the measured values.
Further, the junction temperature T of the first IGBT and the junction temperature T of the second IGBTIGBT(t) is calculated from the following formula:
wherein, PIGBT(t) is the instantaneous heating power of IGBT, the thermal impedance Z1、Z2、Z3Respectively the self-impedance of the IGBT to air, the self-impedance of the diode to air and the mutual impedance between the IGBT and the diode, TAIR(t) is the temperature of the air environment, and T (t) is the diode junction temperature.
Further, the thermal impedance Z1、Z2、Z3Obtained by heat testing.
Further, under the working conditions of different collector and emitter voltages and collector currents, the collector opening current overshoot values of different diode junction temperatures are tested, the least square method is adopted for fitting, the relation between the diode junction temperature and the collector opening current overshoot is obtained, and the corresponding diode junction temperature is obtained according to the measured collector opening current overshoot.
Further, when the overshoot of the collector turn-on current is the overshoot of the collector turn-on current of the first IGBT, the obtained junction temperature t (t) of the diode is the junction temperature of the diode connected in parallel with the second IGBT; and when the overshoot of the collector opening current is equal to the overshoot of the collector opening current of the second IGBT, the obtained diode junction temperature T (t) is the junction temperature of the diode connected in parallel with the first IGBT.
In summary, the present invention provides an IGBT junction temperature monitoring apparatus and method, which utilize the relationship between the peak value of the reverse recovery current of the diode and the junction temperature of the diode, and combine with the IGBT module thermal impedance network model to realize indirect monitoring of the junction temperature of the IGBT chip. The relation that the IGBT collector opening current overshoot is equal to the reverse recovery current of the pair of anti-parallel diodes is utilized. The junction temperature of the IGBT module is monitored on line by monitoring the overshoot of the opening current of the collector, the monitoring method has no interference to the normal work of the circuit, and only a sampling circuit needs to be added.
Drawings
Fig. 1 is a schematic diagram of a specific device for monitoring junction temperature of an IGBT module by using collector turn-on current overshoot according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of an IGBT module according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a key waveform when the IGBT is turned on;
fig. 4 is a numerical relationship of collector turn-on current overshooting diode junction temperature T when bus voltage 600V and collector current 150V of an actual measurement english-flier IGBT module FF300R12ME 4;
FIG. 5 is a model diagram of a thermal impedance network formed by an IGBT, an anti-parallel diode thereof and an environment in the IGBT module;
fig. 6 is a schematic flow chart of an IGBT junction temperature monitoring method in an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings in conjunction with the following detailed description. It should be understood that the description is intended to be exemplary only, and is not intended to limit the scope of the present invention. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention.
A first aspect of the present invention provides an IGBT junction temperature monitoring apparatus, as shown in fig. 1, including: the device comprises a direct current power supply 1, an IGBT module 2, a first current monitoring circuit 3, a second current monitoring circuit 4, a voltage isolation measuring circuit 5 and a DSP/MCU digital processing unit 6; the IGBT module comprises a first IGBT and a second IGBT which are connected in series, and each IGBT is connected with a diode in an anti-parallel mode and is a first diode and a second diode respectively; the first current monitoring circuit measures the overshoot of the collector opening current of the first IGBT, the second current monitoring circuit measures the overshoot of the collector opening current of the second IGBT, and the measured value is transmitted to the DSP/MCU digital processing unit; the voltage isolation measuring circuit is used for measuring the collector electrode turn-on voltage and transmitting a measured value to the DSP/MCU digital processing unit; and the DSP/MCU digital processing unit respectively calculates junction temperatures of the first IGBT and the second IGBT according to the received measured values. The arrow in fig. 1 indicates the position of the bridge arm midpoint where the load is connected, typically an inductive load. The circuit measurement side sensor may employ a rogowski coil. And the DSP/MCU digital processing unit receives data of IGBT switching-on voltage, switching-on current overshoot and the like, and further calculates to obtain data of IGBT chip junction temperature.
Fig. 2 is a schematic diagram of an IGBT module, and a general high-power IGBT module is formed by integrating two IGBTs, so as to facilitate the design and use of a bridge circuit. And a fast diode is connected in parallel outside each IGBT. The diode functions to provide a freewheeling path for the inductive load.
FIG. 3 shows key waveforms (including collector-emitter voltage v) when the IGBT is turned onceCollector current icAnd a gate voltage vg) A schematic diagram in which the respective physical quantities are represented as: gate current igGate driving voltage vgCollector-emitter voltage vceCollector current icGate threshold voltage Vg_thLoad current ILGate electrode miller voltage Vg_milGate turn-on voltage overshoot Vg_pGate turn-on voltage Vg_onGate turn-on voltage Vg_offDC bus voltage VbusTurn on collector current overshoot Vc_max. In addition, the gate drive resistance is represented as Rg_onThe gate input capacitance is denoted Cies. According to different waveform characteristics, the method is divided into 6 stages.
Stage 1[ t ]0-t1]In this stage, the driving power passes through the driving resistor Rg_onTo an input capacitor CiesCharging, the charging current being denoted ig. At this time, the gate voltage vgRising exponentially, this causes the IGBT gate to gradually increase in electron concentration, starting to invert. During this period, the collector-emitter voltage vceAnd collector current icConstant, collector-emitter voltage vceIs a DC bus voltage VbusCollector current icIs zero.
Stage 2[ t ]1-t2]: the stage is from t1Starting at a time point when the gate voltage is from vgIncreasing to gate threshold voltage Vg_th. The gate begins to develop a strong inversion layer. The gate channel starts to conduct and the collector current icIncreases rapidly from 0 to the load current IL. At the moment, the collector-emitter voltage v is caused to exist due to the existence of bus parasitic inductanceceThere was a slight drop.
Stage 3[ t ]2-t3]: at the beginning of this phase, the collector current icHas risen to ILAt this time, the voltage of the antiparallel diode of the upper tube begins to rise, and the collector-emitter voltage vceA rapid fall is initiated. The equivalent miller capacitance of the input capacitance at this stage is very large, so all gate currents igAll charging an input miller capacitor, a gate capacitor CgcIs maintained at a constant gate miller voltage Vg_milAnd is not changed. However, the anti-parallel diode of the top tube has a reverse recovery process at the turn-off time. Thus the collector current icAt the rise to the load current ILLater, it will continue to rise.
Stage 4[ t ]3-t4]: at this stage, the reverse recovery current I of the dioderrBegins to fall, collecting and emitting voltage vceAnd continues to descend. Grid voltage vgStill maintain Vg_milAnd is not changed.
Stage 5[ t ]4-t5]Collector current icHas been reduced to a load current ILCollector-emitter voltage vceAnd continues to descend. Grid voltage vgStill maintain Vg_milAnd is not changed.
Stage 6[ t ]5-t6]When the IGBT is turned on and enters a saturation region, the collector current icAnd collector-emitter voltage vceRemain unchanged. The grid power supply passes through a driving resistor Rg_onCharging the gate input capacitor to the gate-on voltage Vg_on。
The overshoot of the collector turn-on current, which can be used for monitoring the IGBT junction temperature, occurs in stage 3 t2-t3]. At the beginning of this phase, the collector current icHas risen to ILAt this time, the voltage of the antiparallel diode of the upper tube begins to rise, and the collector-emitter voltage vceA rapid fall is initiated. The equivalent miller capacitance of the input capacitance at this stage is very large, so all gate currents igAll charging the input miller capacitance, the gate capacitance
CgcVoltage holding constant Vg_milAnd is not changed. However, the anti-parallel diode of the top tube has a reverse recovery process at the turn-off time. Thus the collector current icAt the rise to the load current ILLater, it will continue to rise. This rising current is closely related to the junction temperature of the IGBT module.
Fig. 4 is a measured numerical relationship of collector turn-on current overshooting diode junction temperature T for an english-flying IGBT module FF300R12ME4 at bus voltage 600V and collector current 150V. It can be seen from the figure that at a fixed bus voltage and collector current, the collector turn-on current is positively correlated to the diode junction temperature. Therefore, the junction temperature of the diode can be estimated through fitting, and the junction temperature of the IGBT is further estimated by combining a thermal impedance model.
The specific implementation method comprises the following steps: by testing the collector opening current overshoot values of different diode junction temperatures under different collector and emitter voltages and collector current working conditions and fitting by adopting a least square method, the relation between the diode junction temperature and the collector opening current overshoot can be obtained.
Im＝f1(T) (1)
A calculation formula for the diode junction temperature can then be obtained:
T＝f1 -1(Im) (2)
fig. 4 shows a thermal impedance network formed by the IGBT, its anti-parallel diode, and the environment in the IGBT module. The thermal impedance network represents a heat transfer model among the IGBT chip, the diode and the air environment. Each thermal impedance in the model can be obtained through thermal test and stored in the DSP/MCU digital processing unit. Wherein Z1Is the self-impedance of IGBT to air, Z2Is the self-impedance of the diode to air, Z3Is the transimpedance between the IGBT and the diode. In addition, there is power loss in both the IGBT and the diode, where PIGBTAnd (t) is the instantaneous heating power of the IGBT. The IGBT satisfies after thermal balance:
wherein T isAIRRepresenting the temperature of the air environment. Then, by using the diode junction temperature T obtained by the equation 2 and combining the equation 3, the junction temperature of the IGBT chip can be obtained to satisfy the following relation:
wherein, PIGBT(t) is the instantaneous heating power of IGBT, the thermal impedance Z1、Z2、Z3Respectively the self-impedance of the IGBT to air, the self-impedance of the diode to air and the mutual impedance between the IGBT and the diode, TAIR(t) is the temperature of the air environment, and T (t) is the diode junction temperature.
Further, the diode junction temperature of the lower tube is obtained through the overshoot of the switching current of the collector and emitter of the upper tube, and the junction temperature of the IGBT of the lower tube is further obtained through a thermal impedance model. Similarly, the diode junction temperature of the upper tube is obtained through the overshoot of the turn-on current of the lower tube collector emitter, and the junction temperature of the upper tube IGBT is further obtained through the thermal impedance model. Namely, when the overshoot of the collector opening current is the overshoot of the collector opening current of the first IGBT, the obtained diode junction temperature T (t) is the junction temperature of the diode connected with the second IGBT in parallel; and when the overshoot of the collector opening current is equal to the overshoot of the collector opening current of the second IGBT, the obtained diode junction temperature T (t) is the junction temperature of the diode connected in parallel with the first IGBT.
A second aspect of the present invention provides an IGBT junction temperature monitoring method, which performs monitoring according to the foregoing apparatus, as shown in fig. 6, and includes the following steps:
and S100, measuring the overshoot of the collector opening current, the collector opening voltage and the collector opening current of the first IGBT and the second IGBT in real time to calculate the junction temperature of the diode. The method comprises the steps of testing the collector opening current overshoot values of different diode junction temperatures under different collector-emitter voltage and collector current working conditions in advance, fitting by adopting a least square method to obtain the relation between the diode junction temperature and the collector opening current overshoot, and storing the relation into a DSP/MCU digital processing unit in advance. The junction temperature of the diode can be obtained from the collector turn-on current overshoot, the collector turn-on voltage and the turn-on current of the first and second IGBTs measured in this step.
S200, a thermal impedance network model formed by the IGBT, the parallel diode and the environment in the IGBT module is set, and the thermal impedance network represents a heat transfer model among the IGBT chip, the diode and the air environment, as shown in figure 4. Each thermal impedance in the model can be obtained through thermal test and stored in the DSP/MCU digital processing unit.
S300, measuring instantaneous heating power P of the IGBTIGBT(T), and the temperature T of the air environmentAIR(t)。
And S400, respectively calculating junction temperatures of the first IGBT and the second IGBT according to the measured value and the calculated value. Specifically, the junction temperatures of the first and second IGBTs are calculated according to the equation 4 based on the obtained junction temperature and thermal impedance equivalent of the diode.
In summary, the present invention provides an IGBT junction temperature monitoring apparatus and method, which utilize the relationship between the peak value of the reverse recovery current of the diode and the junction temperature of the diode, and combine with the IGBT module thermal impedance network model to realize indirect monitoring of the junction temperature of the IGBT chip. The relation that the IGBT collector opening current overshoot is equal to the reverse recovery current of the pair of anti-parallel diodes is utilized. The junction temperature of the IGBT module is monitored on line by monitoring the overshoot of the opening current of the collector, the monitoring method has no interference to the normal work of the circuit, and only a sampling circuit needs to be added.
It is to be understood that the above-described embodiments of the present invention are merely illustrative of or explaining the principles of the invention and are not to be construed as limiting the invention. Therefore, any modification, equivalent replacement, improvement and the like made without departing from the spirit and scope of the present invention should be included in the protection scope of the present invention. Further, it is intended that the appended claims cover all such variations and modifications as fall within the scope and boundaries of the appended claims or the equivalents of such scope and boundaries.
Claims (6)
1. An IGBT junction temperature monitoring apparatus, comprising: the device comprises a direct-current power supply, an IGBT module, a first current monitoring circuit, a second current monitoring circuit, a voltage isolation measuring circuit and a DSP/MCU digital processing unit;
the IGBT module comprises a first IGBT and a second IGBT which are connected in series, and each IGBT is connected with a diode in parallel;
the first current monitoring circuit measures the overshoot of the collector opening current of the first IGBT, the second current monitoring circuit measures the overshoot of the collector opening current of the second IGBT, and the measured value is transmitted to the DSP/MCU digital processing unit;
the voltage isolation measuring circuit is used for measuring the collector opening voltage and the collector current and transmitting the measured value to the DSP/MCU digital processing unit;
the DSP/MCU digital processing unit respectively calculates junction temperatures of the first IGBT and the second IGBT according to the received measured values;
of the first and second IGBTsJunction temperature TIGBT(t) is calculated from the following formula:
wherein, PIGBT(t) is the instantaneous heating power of IGBT, the thermal impedance Z1、Z2、Z3Respectively the self-impedance of the IGBT to air, the self-impedance of the diode to air and the mutual impedance between the IGBT and the diode, TAIR(t) is the temperature of the air environment, and t (t) is the diode junction temperature;
when the overshoot of the current for turning on the collector electrode is the overshoot of the current for turning on the collector electrode of the first IGBT, the obtained junction temperature T (t) of the diode is the junction temperature of the diode connected in parallel with the second IGBT; and when the overshoot of the collector opening current is the overshoot of the collector opening current of the second IGBT, the obtained diode junction temperature T (t) is the junction temperature of the diode connected in parallel with the first IGBT.
2. The apparatus of claim 1 wherein the thermal impedance Z1、Z2、Z3And obtaining the data through a thermal test and storing the data in the DSP/MCU digital processing unit.
3. The device as claimed in claim 1 or 2, wherein values of overshoot of collector turn-on current at different diode junction temperatures under different collector-emitter voltage and collector current conditions are tested, a least square method is used for fitting to obtain a relation between the diode junction temperature and the overshoot of the collector turn-on current, and the corresponding diode junction temperature is obtained according to the measured overshoot of the collector turn-on current.
4. A method for monitoring IGBT junction temperature, characterized in that the monitoring is performed by the apparatus according to any one of claims 1-3, comprising the steps of:
measuring the overshoot of the collector turn-on current, the collector turn-on voltage and the collector current of the first IGBT and the second IGBT in real time to calculate the junction temperature of the diode;
setting a thermal impedance network model formed by an IGBT, a parallel diode thereof and the environment in the IGBT module, and measuring each thermal impedance;
measuring IGBT instantaneous heating power PIGBT(T), and the temperature T of the air environmentAIR(t)；
Respectively calculating junction temperatures of the first IGBT and the second IGBT according to the measured values;
junction temperature T of the first IGBT and the second IGBTIGBT(t) is calculated from the following formula:
wherein, PIGBT(t) is the instantaneous heating power of IGBT, the thermal impedance Z1、Z2、Z3Respectively the self-impedance of the IGBT to air, the self-impedance of the diode to air and the mutual impedance between the IGBT and the diode, TAIR(t) is the temperature of the air environment, and t (t) is the diode junction temperature;
when the overshoot of the current for turning on the collector electrode is the overshoot of the current for turning on the collector electrode of the first IGBT, the obtained junction temperature T (t) of the diode is the junction temperature of the diode connected in parallel with the second IGBT; and when the overshoot of the collector opening current is the overshoot of the collector opening current of the second IGBT, the obtained diode junction temperature T (t) is the junction temperature of the diode connected in parallel with the first IGBT.
5. Method according to claim 4, characterized in that the thermal impedance Z1、Z2、Z3Obtained by heat testing.
6. The method as claimed in claim 5, wherein values of overshoot of collector turn-on current at different diode junction temperatures under different collector-emitter voltage and collector current conditions are measured, a least square method is used for fitting to obtain a relation between the diode junction temperature and the overshoot of the collector turn-on current, and the corresponding diode junction temperature is obtained according to the measured overshoot of the collector turn-on current.
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| CN113098314B (en) * | 2021-04-07 | 2022-07-26 | 清华大学 | IGBT junction temperature monitoring method, device and system |
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| CN109597966B (en) * | 2018-11-30 | 2023-03-24 | 上海大郡动力控制技术有限公司 | Method for estimating junction temperature of IGBT (insulated Gate Bipolar transistor) of power element in motor controller |
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