CN202794445U - Novel high-temperature reverse bias testing machine - Google Patents
Novel high-temperature reverse bias testing machine Download PDFInfo
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- CN202794445U CN202794445U CN 201220449795 CN201220449795U CN202794445U CN 202794445 U CN202794445 U CN 202794445U CN 201220449795 CN201220449795 CN 201220449795 CN 201220449795 U CN201220449795 U CN 201220449795U CN 202794445 U CN202794445 U CN 202794445U
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Abstract
The utility model relates to a novel high-temperature reverse bias testing machine. An electronic switch module is connected between an element to be tested and a protective module in series, and the control end of the electronic switch module is connected with a serial port module of an industrial personal computer through a single-chip microcomputer module. Characteristics of the components of a relay, an audion, an insulated gate bipolar translator (IGBT), a metal-oxide-semiconductor field effect transistor (MOSFET) or a thyristor are utilized, current preset by the industrial personal computer and output of a leakage current measuring module are compared, the industrial personal computer controls the single-chip microcomputer module to drive the components to be connected or disconnected, connection or disconnection of the element to be tested on a loop is achieved, the element to be tested cannot be burnt down further, materials close to perfect are provided for failure analysis engineers so as to facilitate data analysis, and the industrial personal computer can work out junction temperature of the element to be tested under different temperature conditions.
Description
Technical field
The utility model relates to semiconductor discrete component reliability testing apparatus field, especially a kind of new type high temperature reverse biased test machine.
Background technology
The effect of high temperature reverse biased test machine is the device that diode, MOSFET, triode, IGBT or controllable silicon original paper are tested, mainly be to add reverse biased at the two ends of said elements device under the hot environment, to test each component reliability, detect simultaneously the parameters such as high-temperature current leakage.Its primary structure is as shown in Figure 9: comprise high temperature test chamber 1, power module, protection module, leakage current measurement module and industrial computer; element under test 2 is installed on the interior burn-in board of high temperature test chamber and connect with power module, protection module and leakage current test module in its two ends, and the output terminal of leakage current measurement module connects the serial ports of industrial computer by 485 communications protocol.
Above-mentioned protection module uses resistance or resistance wire; fuse minimum gauge wherein and the most frequently used be 100mA; but the maximum allowed current of element under test is generally less microampere order or milliampere level; so fuse just can work after element under test burns fully; this can cause the each pattern that lost efficacy of element under test the same; be and burn, use the result of resistance also the same with fuse.
So, element under test in the existing test machine lost efficacy all the same, more useful data can't be provided for follow-up failure analysis, and existing test machine can't calculate the junction temperature Tj of element under test, cause a lot of experiments when doing test, basically how others does, and how oneself does, and has reduced the accuracy of experimental result.
The utility model content
The purpose of this utility model is to overcome the deficiencies in the prior art, and a kind of new type high temperature reverse biased test machine that can accurately control electric current and can calculate the element under test junction temperature is provided.
The technical scheme that the utility model is taked is:
A kind of new type high temperature reverse biased test machine; comprise the high-temperature test chamber case; power module; protection module; the leakage current measurement module; temperature control module and industrial computer; element under test and the power module installed in the high temperature test chamber; protection module and the series connection of leakage current measurement module; the output terminal of leakage current measurement module connects the serial port module of industrial computer; temperature control module is installed on the high-temperature test chamber; it is characterized in that: be connected in series an electronic switch module between described element under test and the protection module, the control end of this electronic switch module connects the serial port module of described industrial computer by an one-chip computer module.
And described electronic switch module is relay, and an end of the coil of this relay connects Vcc, and the other end connects the input/output interface of one-chip computer module, and the normally opened contact of this relay is connected between element under test and the protection module.
And described relay is electromagnetic relay, dry-reed relay or mercury-wetted relay.
And described electronic switch module is triode, and the collector and emitter of this triode is connected with protection module with element under test respectively, and the base stage of this triode connects the input/output interface of one-chip computer module.
And described electronic switch module is IGBT, and the collector and emitter of this IGBT is connected with protection module with element under test respectively, and the grid of this IGBT connects the input/output interface of one-chip computer module.
And described electronic switch module is MOSfet, and the drain electrode of this MOSfet is connected with source class with element under test and is connected with protection module, and the grid of this MOSfet connects the input/output interface of one-chip computer module.
And described electronic switch module is controllable silicon, and this silicon controlled sun level is connected with element under test with negative electrode and is connected the input/output interface of this silicon controlled controlled stage connection one-chip computer module with protection module.
And the output terminal of described power module connects the serial port module of industrial computer.
And described temperature control module connects the serial port module of industrial computer.
Advantage of the present utility model and good effect are:
In the utility model, utilize the characteristic of relay, triode, IGBT, MOSFET or these components and parts of controllable silicon, the output of the predefined electric current of industrial computer and leakage current measurement module is compared, then by the break-make of the above-mentioned components and parts of industrial computer control single chip computer module drive, realized the break-make in loop, element under test place, element under test can further not burnt, for the failure analysis slip-stick artist provides near intact material, be convenient to data analysis, and industrial computer can calculate the junction temperature under the element under test condition of different temperatures.
Description of drawings
Fig. 1 is that the utility model adopts relay to carry out the structural representation of Test Diode;
Fig. 2 is that the utility model adopts relay to carry out the structural representation of IGBT test;
Fig. 3 is that the utility model adopts relay to carry out the structural representation of MOFSET test;
Fig. 4 is that the utility model adopts relay to carry out the structural representation of triode test;
Fig. 5 is that the utility model adopts IGBT to carry out the structural representation of Test Diode;
Fig. 6 is that the utility model adopts MOFSET to carry out the structural representation of IGBT test;
Fig. 7 is that the utility model adopts MOFSET to carry out the structural representation of MOFSET test;
Fig. 8 is that the utility model adopts triode to carry out the structural representation of triode test;
Fig. 9 is the structural representation of prior art.
Embodiment
Below in conjunction with embodiment, the utility model is further specified, following embodiment is illustrative, is not determinate, can not limit protection domain of the present utility model with following embodiment.
A kind of new type high temperature reverse biased test machine; shown in Fig. 1～8; comprise high temperature test chamber 1; power module; protection module; the leakage current measurement module; temperature control module and industrial computer; element under test 2 and the power module installed in the high-temperature test chamber; protection module and the series connection of leakage current measurement module; the output terminal of leakage current measurement module connects the serial port module of industrial computer; temperature control module connects high temperature test chamber; the temperature controller that temperature control module is namely commonly used; innovation of the present utility model is: be connected in series an electronic switch module 3 between described element under test and the protection module, the control end of this electronic switch module connects the serial port module of described industrial computer by an one-chip computer module.
The Main Function of electronic switch module is the control of being carried out loop, element under test place break-make by one-chip computer module, so electronic switch module can adopt relay, triode, IGBT, MOFSET or controllable silicon.
The below describes respectively:
Electronic switch module is shown in Fig. 1～4; relay can be electromagnetic relay, dry-reed relay or mercury-wetted relay; the Vcc of one end connection+12V of the coil of this relay; the other end connects the input/output interface of one-chip computer module, and the normally opened contact of this relay is connected between element under test and the protection module.
Electronic switch module as shown in Figure 8, the collector C of this triode is connected with emitter E with element under test and is connected with protection module, the base stage B of this triode connects the input/output interface of one-chip computer module.
Electronic switch module as shown in Figure 5, the collector C of this IGBT is connected with emitter E with element under test and is connected with protection module, the grid G of this IGBT connects the input/output interface of one-chip computer module.
Electronic switch module is shown in Fig. 6,7, and the drain D of this MOSfet is connected with element under test with source class S and is connected with protection module, and the grid G of this MOSfet connects the input/output interface of one-chip computer module.
Electronic switch module is controllable silicon, and this silicon controlled sun level is connected with element under test with negative electrode and is connected the input/output interface of this silicon controlled controlled stage connection one-chip computer module with protection module.
The single-chip microcomputer of installing in the power module connects the serial port module of industrial computer by serial port module.Temperature control module connects the serial port module of industrial computer by serial port module.
Above-mentioned temperature control module, power module, leakage current measurement module and one-chip computer module are all by 485 or 232 serial port module that connect industrial computers.
The below describes as an example of dry-reed relay example:
1. element under test protection
⑴ operating personnel are installed in element under test on the burn-in board (or burn-in sockets) in the high-temperature test chamber, utilize industrial computer to carry out the setting of electric current, can be microampere-milliampere in addition receive the peace rank.
⑵ during test, high-temperature test chamber work, the input/output interface low level of one-chip computer module, it is electric that the dry-reed relay coil is got, its normally opened contact adhesive.Industrial computer is by the electric current in loop, leakage current measurement module Real-time Obtaining element under test place, when this electric current exceeds the electric current of setting among the step ⑴, industrial computer makes the input/output interface output high level of one-chip computer module, the dry-reed relay coil losing electricity, normally opened contact disconnects, the detected element dead electricity stops test.Usually it is simultaneously tested to have multiplexed elements in whole equipment, and all examples are all take wherein one the road as example.When a certain circuit component lost efficacy, cause the electronic switch that disconnects the inefficacy loop, the element in other loop is unaffected.
Other relay, triode, IGBT, MOSFET or SCR control process are all similar, provide control signal by one-chip computer module and make loop, element under test place realize path or open circuit.
2. thermal resistance measurement
⑴ select thermal resistance measurement in industrial computer, and set some parameters, such as initial temperature, final temperature 1, final temperature 2, temperature interval, power-up time, equilibration time, and sets test voltage for corresponding test board, then by beginning, and the equipment operation.
⑵ industrial computer control high-temperature test chamber is started working from initial temperature, after temperature stabilization (T1), industrial computer control electronic switch module is closed, the closed rear leakage current (Ir1) of measuring each material at once, when arriving the power-up time of setting, again measure leakage current (Ir1H).
Measure complete, according to the temperature interval, the high-temperature test chamber automatic heating is to next temperature (T2), when equalized temperature, industrial computer control electronic switch module is closed, measure the leakage current (Ir2) of each material after closed, when arriving the power-up time of setting, again measure leakage current (Ir2H) at once.
⑶ circulation step ⑵ under a plurality of different temperature conditions, measures the leakage current of material, from initial temperature, to the final temperature end, generally can measure 2～5 temperature spots, obtains a plurality of leakage current value, such as Ir1, and Ir2 ... Ir5.
⑷ according to above temperature T 1, T2, and T3, T4, T5 and leakage current value Ir1, Ir2, Ir 3, and Ir 4, and Ir 5 depicts the curve between temperature and the leakage current.Usually the X transverse axis is temperature, and Y-axis is leakage current.
In the above data, the leakage current that Ir1H obtains when being normal high temperature reverse biased test according to the K curve of having depicted, when knowing leakage current, can instead be released corresponding temperature, and the temperature of this moment is junction temperature Tj.
Utilize formula Rthja=(Tj-Ta)/P can calculate the thermal resistance of measured material, P=U * I wherein, the U voltage when measuring, the I leakage current when measuring, i.e. Ir1H, Ta is the environment temperature of high-temperature test chamber, the corresponding T1 that is.
3. high temperature reverse biased (HTRB) test
In the industrial computer page, select the definite value test, be common high temperature reverse bias (HTRB) test
Industrial computer is set and to be carried out Temperature Setting, and then carries out other setting, test voltage for example, the thermal resistance value Rthja that just now calculated in addition.
After bringing into operation, industrial computer is according to setting, automatically perform relevant test, leakage current for example, voltage, the temperature of high-temperature test chamber etc., then according to formula Rthja=(Tj-Ta)/P, temperature at rthja and Ta(high-temperature test chamber) in the known situation, the voltage among P=U * I and leakage current can be measured in real time, can calculate in real time the junction temperature Tj of measured material.
In the utility model, utilize the characteristic of relay, triode, IGBT, MOSFET or these components and parts of controllable silicon, the output of the predefined electric current of industrial computer and leakage current measurement module is compared, then by the break-make of the above-mentioned components and parts of industrial computer control single chip computer module drive, realized the break-make in loop, element under test place, element under test can further not burnt, for the failure analysis slip-stick artist provides near intact material, be convenient to data analysis, and industrial computer can calculate junction temperature corresponding under the element under test varying environment temperature.
Claims (9)
1. new type high temperature reverse biased test machine; comprise high-temperature test chamber; power module; protection module; the leakage current measurement module; temperature control module and industrial computer; element under test and the power module installed in the high temperature test chamber; protection module and the series connection of leakage current measurement module; the output terminal of leakage current measurement module connects the serial port module of industrial computer; temperature control module is installed on the high temperature experimental box; it is characterized in that: be connected in series an electronic switch module between described element under test and the protection module, the control end of this electronic switch module connects the serial port module of described industrial computer by an one-chip computer module.
2. a kind of new type high temperature reverse biased test machine according to claim 1; it is characterized in that: described electronic switch module is relay; one end of the coil of this relay connects Vcc; the other end connects the input/output interface of one-chip computer module, and the normally opened contact of this relay is connected between element under test and the protection module.
3. a kind of new type high temperature reverse biased test machine according to claim 2, it is characterized in that: described relay is electromagnetic relay, dry-reed relay or mercury-wetted relay.
4. a kind of new type high temperature reverse biased test machine according to claim 1; it is characterized in that: described electronic switch module is triode; the collector and emitter of this triode is connected with protection module with element under test respectively, and the base stage of this triode connects the input/output interface of one-chip computer module.
5. a kind of new type high temperature reverse biased test machine according to claim 1; it is characterized in that: described electronic switch module is IGBT; the collector and emitter of this IGBT is connected with protection module with element under test respectively, and the grid of this IGBT connects the input/output interface of one-chip computer module.
6. a kind of new type high temperature reverse biased test machine according to claim 1; it is characterized in that: described electronic switch module is MOSfet; the drain electrode of this MOSfet is connected with source class with element under test and is connected with protection module, and the grid of this MOSfet connects the input/output interface of one-chip computer module.
7. a kind of new type high temperature reverse biased test machine according to claim 1; it is characterized in that: described electronic switch module is controllable silicon; this silicon controlled sun level is connected with element under test with negative electrode and is connected the input/output interface of this silicon controlled controlled stage connection one-chip computer module with protection module.
8. the described a kind of new type high temperature reverse biased test machine of any one is characterized in that: the serial port module of the output terminal connection industrial computer of described power module according to claim 1～7.
9. the described a kind of new type high temperature reverse biased test machine of any one is characterized in that: the serial port module of described temperature control module connection industrial computer according to claim 1～7.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201220449795 CN202794445U (en) | 2012-09-05 | 2012-09-05 | Novel high-temperature reverse bias testing machine |
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| CN 201220449795 CN202794445U (en) | 2012-09-05 | 2012-09-05 | Novel high-temperature reverse bias testing machine |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104807552A (en) * | 2014-01-29 | 2015-07-29 | 上海力兹照明电气有限公司 | Low-cost high-precision LED node temperature measuring instrument |
| CN104898035A (en) * | 2015-06-15 | 2015-09-09 | 山东晶导微电子有限公司 | High-temperature reverse bias testing system for real-time data collection |
| CN105242077A (en) * | 2014-07-11 | 2016-01-13 | 北大方正集团有限公司 | Burn-in board |
| CN107271878A (en) * | 2017-06-14 | 2017-10-20 | 山东阅芯电子科技有限公司 | Pass through the hot properties method of testing and device of electric current heating semiconductor |
| CN107294061A (en) * | 2017-06-26 | 2017-10-24 | 北京无线电测量研究所 | A kind of guard method of high voltage power supply electric leakage and device |
| CN107436402A (en) * | 2017-08-01 | 2017-12-05 | 华北电力大学 | A kind of adjusting method and regulating system of thermostat temperature |
| CN107703796A (en) * | 2017-09-20 | 2018-02-16 | 深圳市帆泰检测技术有限公司 | television environment pressure test device and method |
| CN113325290A (en) * | 2021-06-25 | 2021-08-31 | 西安派瑞功率半导体变流技术股份有限公司 | Thyristor life aging screening device for high-voltage direct-current transmission valve |
| CN113359000A (en) * | 2021-07-27 | 2021-09-07 | 上汽英飞凌汽车功率半导体(上海)有限公司 | Online aging testing device |
| WO2024000186A1 (en) * | 2022-06-28 | 2024-01-04 | Innoscience (suzhou) Semiconductor Co., Ltd. | Protection circuit for high temperature reverse bias test |
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2012
- 2012-09-05 CN CN 201220449795 patent/CN202794445U/en not_active Expired - Fee Related
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104807552A (en) * | 2014-01-29 | 2015-07-29 | 上海力兹照明电气有限公司 | Low-cost high-precision LED node temperature measuring instrument |
| CN105242077B (en) * | 2014-07-11 | 2018-09-25 | 北大方正集团有限公司 | A kind of burn-in board |
| CN105242077A (en) * | 2014-07-11 | 2016-01-13 | 北大方正集团有限公司 | Burn-in board |
| CN104898035A (en) * | 2015-06-15 | 2015-09-09 | 山东晶导微电子有限公司 | High-temperature reverse bias testing system for real-time data collection |
| CN107271878B (en) * | 2017-06-14 | 2019-07-30 | 山东阅芯电子科技有限公司 | Pass through the hot properties test method and device of electric current heating semiconductor |
| CN107271878A (en) * | 2017-06-14 | 2017-10-20 | 山东阅芯电子科技有限公司 | Pass through the hot properties method of testing and device of electric current heating semiconductor |
| CN107294061A (en) * | 2017-06-26 | 2017-10-24 | 北京无线电测量研究所 | A kind of guard method of high voltage power supply electric leakage and device |
| CN107294061B (en) * | 2017-06-26 | 2019-07-26 | 北京无线电测量研究所 | A kind of guard method of high voltage power supply electric leakage and device |
| CN107436402A (en) * | 2017-08-01 | 2017-12-05 | 华北电力大学 | A kind of adjusting method and regulating system of thermostat temperature |
| CN107703796A (en) * | 2017-09-20 | 2018-02-16 | 深圳市帆泰检测技术有限公司 | television environment pressure test device and method |
| CN113325290A (en) * | 2021-06-25 | 2021-08-31 | 西安派瑞功率半导体变流技术股份有限公司 | Thyristor life aging screening device for high-voltage direct-current transmission valve |
| CN113359000A (en) * | 2021-07-27 | 2021-09-07 | 上汽英飞凌汽车功率半导体(上海)有限公司 | Online aging testing device |
| CN113359000B (en) * | 2021-07-27 | 2023-06-16 | 上汽英飞凌汽车功率半导体(上海)有限公司 | Online aging testing device |
| WO2024000186A1 (en) * | 2022-06-28 | 2024-01-04 | Innoscience (suzhou) Semiconductor Co., Ltd. | Protection circuit for high temperature reverse bias test |
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