CN202631688U

CN202631688U - High-temperature reverse-bias test system for power device

Info

Publication number: CN202631688U
Application number: CN 201220209685
Authority: CN
Inventors: 赵振华
Original assignee: WUXI ROUM SEMICONDUCTOR TECHNOLOGY Co Ltd
Current assignee: WUXI ROUM SEMICONDUCTOR TECHNOLOGY Co Ltd
Priority date: 2012-05-11
Filing date: 2012-05-11
Publication date: 2012-12-26
Anticipated expiration: 2022-05-11

Abstract

The utility model relates to a reliability evaluation device of a power device used for laboratory, and concretely relates to a high-temperature reverse-bias test system for the power device. The high-temperature reverse-bias test system is characterized by comprising a baking oven, a transistor curve trancer, a socket plate of the device to be detected, the transistor curve trancer is the power supply for the reverse-bias test and a display apparatus for the reverse-bias test result, the socket plate of the device to be detected is connected to a power supply output terminal of the transistor curve trancer through a high temperature lead, and the socket plate of the device to be detected is placed in the baking oven. The small-sized high-temperature reverse-bias test system has the advantages of small size, convenient operation, and economical and practical effects. The product performance index enables qualitative or quantitative evaluation according to the test temperature and time.

Description

Power device high temperature reverse bias pilot system

Technical field

The utility model designs a kind of laboratory and uses the reliability evaluating device, is specially power device high temperature reverse bias test unit.

Background technology

The existing high temperature reverse bias test unit that is used for test transistor partly is made up of high temperature oven, biasing plate, anti-power supply partially and control, display system etc.This device comprises power supply, master control system, supplementary controlled system, computing machine, display, connector, biasing plate, constant temperature enclosure; Concentrate together; Equipment volume is huge; Cost an arm and a leg, for the installation site enter the size with highly specific (special) requirements is arranged, so this device service condition receives severely restricts.Simultaneously because the high temperature reverse bias performance is an important tests of assessment semiconductor power device reliability, so no matter product manufacturing side or user, engineering master's homegate all needs the high temperature reverse bias pilot system that cover research and development are used.

Summary of the invention

To above-mentioned technical matters, high temperature reverse bias pilot system provided by the invention, volume is little, is particularly useful for the laboratory and uses, and concrete technical scheme is:

Power device high temperature reverse bias pilot system; Comprise baking oven, transistor curve tracer, measured device socket; The measured device socket is connected with the transistor curve tracer output port of power source through high temperature wire, and described device socket plate to be tested is as in the baking oven.

Transistor curve tracer is the anti-power supply of test partially, is again the anti-display device of test findings partially,

The base plate of measured device socket is a printed-wiring board (PWB), is distributed with hi-line and ground wire on the printed-wiring board (PWB), the socket that is connected with the measured device protective resistance on the wiring board and matees with measured device.

Under the normal temperature or under the high temperature; When measured device is schottky diode, fast recovery diode, bipolar transistor, MOS memory and igbt; Measured device is inserted on the measured device socket; Output voltage is a test determination voltage on the transistor curve tracer as long as regulate, and the transistor curve tracer display screen will show the reverse leakage flow curve of measured device.If what show on the display screen is straight line, represent that then measured device is qualified, if curve then shows to have the product that lost efficacy in the measured device.

Under the normal temperature or under the high temperature; When measured device is integrated regulator, measured device is inserted on the measured device socket, output voltage is a test determination voltage on the transistor curve tracer as long as regulate; The transistor curve tracer display screen will show the voltage stabilizing curve of measured device; Represent that then measured device is qualified,, then show to have the product that lost efficacy in the measured device if not the voltage stabilizing curve.

The anti-pilot system partially of mini type high temperature power device provided by the invention, volume is little, and is easy to operate, economical and practical.According to test temperature and time, just can qualitative or quantitative evaluation product performance index.

Description of drawings

Fig. 1, the utility model structural representation;

Fig. 2, the measured device socket structural representation of the utility model.

Embodiment

Like Fig. 1; Power device high temperature reverse bias pilot system comprises baking oven 1, transistor curve tracer 2, measured device socket 3, and measured device socket 3 is connected with transistor curve tracer 2 output port of power source through high temperature wire 4; As shown in Figure 2; Described measured device socket 3, base plate are printed-wiring board (PWB) 3-1, are distributed with hi-line 3-4 and ground wire 3-5 on the printed-wiring board (PWB) 3-1; The socket 3-2 that is connected with protective resistance 3-3 on the circuit and matees with measured device, described device socket plate 3 to be tested is controlled in the baking oven 1 as for the band temperature automatically.

During test; The HVB high voltage bias voltage of needed 500V to 2000V is provided by the high-voltage output end 2-1 on the transistor curve tracer 2; The following bias voltage of 500V is provided by the collector emitter voltage 2-2 on the transistor curve tracer 2; Measured device 5 is pressed polarity of electrode and is inserted on the measured device socket 3, the bias supply of measured device socket 3 and transistor curve tracer 2 be connected use high temperature wire 4.

Normal temperature is the such switching transistor commonly used of test D13003 down; Measured device 5 is inserted on the measured device socket 3; As long as regulate when output voltage is test determination voltage 600V reversed bias voltage on the transistor curve tracer 2; Reverse leakage current should be less than 10 μ A, and transistor curve tracer display screen 2-3 will show the reverse leakage flow curve 2-3-1 straight line of measured device.If what show is the such curve of 2-3-2, this device is described under the 600V reversed bias voltage of regulation, leakage current is severe overweight (＞＞10 μ A), then shows to have the product that lost efficacy in the measured device 5, needs the investigation reason.

Normal temperature is tested under the normal situation down, and the measured device socket 3 that will have measured device 5 is again put into baking oven 1, and baking oven 1 temperature is risen to 140 ℃ ~ 160 ℃, and the curve that the transistor characteristic diagram goes up display screen 2-3 will change.For the such switching transistor commonly used of D13003, when product specification was 140 ℃ of environment temperatures, the anti-leakage current partially of 600V was less than 50 μ A; Actual have only 1 ~ 3 μ A, so even in 140 ℃ of baking ovens, when having only a product; Because general transistor characteristic diagram view display sensitivity is more than 5 μ A, thus the curve that occurs at a display screen 2-3 straight line as 2-3-1 still, if but when tens to hundreds of anti-inclined to one side tests of products parallel connection are arranged; As long as have product reverse leakage current to increase or exceed standard; At the curve that display screen 2-3 occurs, just not a straight line as 2-3-1, but the such curve of 2-3-2 occurs.Explain in the device 5 to be detected underproof product is arranged.

Claims

1. power device high temperature reverse bias pilot system; It is characterized in that; Comprise baking oven, transistor curve tracer, measured device socket, the measured device socket is connected with the transistor curve tracer output port of power source through high temperature wire, and described device socket plate to be tested places in the baking oven.

2. power device high temperature reverse bias pilot system according to claim 1; It is characterized in that; The base plate of described measured device socket is a printed-wiring board (PWB); Be distributed with hi-line and ground wire on the printed-wiring board (PWB), the socket that is connected with the measured device protective resistance on the wiring board and matees with measured device.