CN107861041A - A kind of high temperature reverse bias test system and method - Google Patents
A kind of high temperature reverse bias test system and method Download PDFInfo
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- CN107861041A CN107861041A CN201710859428.5A CN201710859428A CN107861041A CN 107861041 A CN107861041 A CN 107861041A CN 201710859428 A CN201710859428 A CN 201710859428A CN 107861041 A CN107861041 A CN 107861041A
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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- G01R31/26—Testing of individual semiconductor devices
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Abstract
The invention provides a kind of high temperature reverse bias test system and method, wherein, the system includes：Testing sample area (1), for placing at least one testing sample (2)；Fin (3), fin (3) are connected to testing sample (2) by one or more heat pipes (4)；Fin (3) is configured with fan (5)；Air channel (6), fin (3) are located in air channel (6)；Current collector (7), testing sample (2) is connected to, for gathering the leakage current of testing sample (2)；Temperature control system (8), current collector (7) is connected to, for the air quantity according to electric leakage flow control fan (5).When carrying out high temperature reverse bias test using insulating box, testing sample is configured with fin and fan, and coordinates temperature control system control to ensure the stabilization of testing sample junction temperature, has the advantages of good heat dissipation effect, temperature control is simple.
Description
Technical field
The present invention relates to power device reliability field, and in particular to a kind of high temperature reverse bias test system and method.
Background technology
With the rapid development of microelectric technique, the continuous progress of mankind's science and technology, power semiconductor has been widely used
In aerospace, military affairs, industry, electric power and the product for civilian use.It is many in order to ensure stability of the semiconductor devices in various product
Device needs to do some necessary aging, screening tests before the use, to ensure the reliably working of device, such as semiconductcor field effect
Should pipe need to do high temperature reverse bias experiment (High Temperature Reverse Bias, be abbreviated as HTRB) in screening, with inspection
Test the reliability of product PN junction.
Due to the continuous development of power system, voltage that the power semiconductor applied to power system is subjected to,
Current class gradually steps up, and this reliability to power device proposes higher requirement.Wherein, high temperature reverse bias is tested for testing
Demonstrate,prove power device long term high temperature steady operation in the case of Leakage Current, be examine power device at high temperature job stability and
The crucial test of reliability.In recent years, with the raising of integration density, the application of high power device module is more and more extensive, when
High power device wired in parallel can produce very big loss, this can make the junction temperature of device in use, Leakage Current is big at high temperature
It is out of control, the failure of device is caused, has a strong impact on the normal operation of power system.
Current existing high temperature reverse bias test platform, is broadly divided into two kinds：One kind is thermostatic box heating, and one kind is to use
Heating plate heats up.Wherein, thermostatic box mode of heating can put multiple high power modules in an insulating box, but due to high-power
Temperature of the module in test due to radiating effect between the bad temperature control difficulty for causing high power module and disparate modules
Uniformity is poor.
The content of the invention
Therefore, the technical problem to be solved in the present invention is to overcome thermostatic box mode of heating of the prior art carrying out
When high power module is tested due to high power module radiating effect difference causes temperature control difficult and temperature consistency difference at least it
One the defects of.
Therefore, the present invention provides following technical scheme：
First aspect present invention, there is provided a kind of high temperature reverse bias test system, including：Testing sample area, for placing at least
One testing sample；Fin, the fin are connected to the testing sample by one or more heat pipes；The radiating
Piece is configured with fan；Air channel, the fin are located in the air channel；Current collector, the testing sample is connected to, is used for
Gather the leakage current of the testing sample；Temperature control system, the current collector is connected to, for according to the leakage current
Control the air quantity of the fan.
Alternatively, the temperature control system is specifically used for searching institute corresponding with the leakage current according to the leakage current
The junction temperature of testing sample is stated, the air quantity of the fan is controlled according to the junction temperature.
Alternatively, the system also includes：Circulate in the wind machine, is arranged inside insulating box, for keeping the insulating box
Temperature it is constant.
Alternatively, the system also includes：Temperature sensor, for gathering the temperature of the fin；The temperature control
System processed is connected to the temperature sensor, the air quantity for circulate in the wind machine described in the temperature control according to the fin.
Alternatively, the system also includes heat sink, the heat sink be configured at the testing sample upside and/or under
Side.
Alternatively, the system also includes：Division board, the division board are arranged at the testing sample area and the air channel
Between.
Alternatively, the system also includes：Power supply, the testing sample is connected to, for being provided for the testing sample
High-voltage dc voltage.
Alternatively, each testing sample is each equipped with the fin, and each fin is each equipped with described
Fan.
Alternatively, the testing sample is crimping IGBT module to be measured.
Second aspect of the present invention, there is provided a kind of high temperature reverse bias method of testing, comprise the following steps：Gather the leakage of testing sample
Electric current；According to the air quantity of the electric leakage flow control fan；Wherein, the testing sample is positioned over testing sample area；The radiating
Piece is connected to the testing sample by one or more heat pipes；The fin arrangement has fan；The fin is located at
In air channel.
Alternatively, included according to the air quantity of the electric leakage flow control fan：Searched and the electric leakage according to the leakage current
The junction temperature of the testing sample corresponding to stream；The air quantity of the fan is controlled according to the junction temperature.
Alternatively, methods described also includes：Obtain the temperature of the fin；According in the temperature control of the fin
The air quantity of circulating fan.
Alternatively, the testing sample is crimping IGBT module to be measured.
Technical solution of the present invention, have the following advantages that：
1. high temperature reverse bias test system provided by the invention, including：Testing sample area, at least one test sample is treated for placing
Product；Fin, the fin are connected to the testing sample by one or more heat pipes；The fin arrangement has wind
Fan；Air channel, the fin are located in the air channel；Current collector, the testing sample is connected to, for gathering described treat
The leakage current of test sample product；Temperature control system, the current collector is connected to, for the wind according to the electric leakage flow control
The air quantity of fan.When carrying out high temperature reverse bias test using insulating box, testing sample is configured with fin and fan, and coordinates temperature
Control system is controlled to ensure the stabilization of testing sample junction temperature, has compact-sized, good heat dissipation effect, temperature control simply excellent
Point.
2. on the basis of above-mentioned high temperature reverse bias test system, the system also includes temperature sensor, and temperature sensor is used
In the temperature of collection fin, temperature sensor is connected to temperature control system, for being followed in the temperature control according to fin
The air quantity of ring blower fan, with reference to the junction temperature and the temperature control circulate in the wind machine of fin and the air quantity of fan of testing sample, realize
The junction temperature control of testing sample so that temperature control is more accurate.
3. on the basis of above-mentioned high temperature reverse bias test system, fin has been separately configured in each testing sample, often
Fan is each equipped with one fin so that the good heat dissipation effect of test sample, and the temperature of same batch test sample is equal
One property is good.
4. high temperature reverse bias method of testing provided by the invention, comprises the following steps：Gather the leakage current of testing sample；According to
The air quantity of the electric leakage flow control fan；Wherein, the testing sample is positioned over testing sample area；The fin passes through one
Or more heat pipes are connected to the testing sample；The fin arrangement has fan；The fin is located in air channel.Pass through
Testing sample configures radiator, is provided with fan on radiator, by the air quantity of the real-time dynamic regulation fan of temperature controller with
The stabilization of testing sample junction temperature is reached, good heat dissipation effect, temperature control are simple, the radiating efficiency height of this method of testing, control
Precision is high.
5. on the basis of above-mentioned high temperature reverse bias method of testing, in addition to obtain the temperature of the fin；According to described
The air quantity of the temperature control circulate in the wind machine of fin.The junction temperature input temp of the temperature of radiator and testing sample is controlled and is
System, by the real-time dynamic regulation calorstat temperature of temperature control system and heatsink temperature to ensure the steady of testing sample junction temperature
Fixed, temperature control is more accurate.
Brief description of the drawings
, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical scheme of the prior art
The required accompanying drawing used is briefly described in embodiment or description of the prior art, it should be apparent that, in describing below
Accompanying drawing is some embodiments of the present invention, for those of ordinary skill in the art, before creative work is not paid
Put, other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of a specific example of the reverse-biased test system of the high temperature of the embodiment of the present invention 1；
Fig. 2 is the structural representation of another specific example of the reverse-biased test system of the high temperature of the embodiment of the present invention 1；
Fig. 3 is the structural representation of another specific example of the reverse-biased test system of the high temperature of the embodiment of the present invention 1；
Fig. 4 is that the heat sink setting of the single crimping IGBT module of the reverse-biased test system of the high temperature of the embodiment of the present invention 1 is shown
It is intended to；
Fig. 5 is the connection of the single tested crimping IGBT module of the foundation of the reverse-biased test system of the high temperature of the embodiment of the present invention 1
Illustrate figure；
Fig. 6 is the flow chart of a specific example of the reverse-biased method of testing of the high temperature of the embodiment of the present invention 2；
Fig. 7 is the flow chart of another specific example of the reverse-biased method of testing of the high temperature of the embodiment of the present invention 2；
Fig. 8 is the flow chart of another specific example of the reverse-biased method of testing of the high temperature of the embodiment of the present invention 2.
Reference：
1- testing samples area；2- testing samples；3- fin；4- heat pipes；5- fans；6- air channels；7- current collectors；8-
Temperature control system；9- circulate in the wind machines；10- insulating boxs；11- temperature sensors；12- heat sinks；13- division boards；14- electricity
Source；15- isolating devices.
Embodiment
Technical scheme is clearly and completely described below in conjunction with accompanying drawing, it is clear that described implementation
Example is part of the embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, ordinary skill
The every other embodiment that personnel are obtained under the premise of creative work is not made, belongs to the scope of protection of the invention.
In the description of the invention, it is necessary to explanation, term " " center ", " on ", " under ", "left", "right", " vertical ",
The orientation or position relationship of the instruction such as " level ", " interior ", " outer " be based on orientation shown in the drawings or position relationship, merely to
Be easy to the description present invention and simplify description, rather than instruction or imply signified device or element must have specific orientation,
With specific azimuth configuration and operation, therefore it is not considered as limiting the invention.In addition, term " first ", " second ",
" the 3rd " is only used for describing purpose, and it is not intended that instruction or hint relative importance.
In the description of the invention, it is necessary to illustrate, unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected, or be integrally connected；Can
To be mechanical connection or electrical connection；Can be joined directly together, can also be indirectly connected by intermediary, can be with
It is the connection of two element internals, can is wireless connection or wired connection.For one of ordinary skill in the art
For, the concrete meaning of above-mentioned term in the present invention can be understood with concrete condition.
As long as in addition, technical characteristic involved in invention described below different embodiments non-structure each other
It is be combined with each other into conflict can.
Embodiment 1
When testing sample quantity is more, the mode of generally use oven heat carries out high temperature reverse bias test, due to perseverance
Multiple testing samples can be placed in incubator, multiple test samples can be tested simultaneously, testing efficiency can be greatly enhanced.
The present embodiment provides a kind of high temperature reverse bias test system, as shown in figure 1, including：
Testing sample area 1, for placing at least one testing sample 2.As shown in Figure 2, testing sample area 1 is located at insulating box
10 inside, multiple testing samples 2, number and the testing sample area 1 of the testing sample 2 that testing sample area 1 can place can be placed
Size it is related to the size of testing sample 2, when testing sample area 1 is larger or testing sample 2 is smaller, testing sample area 1
The number for the testing sample 2 that can be placed is more；Conversely, when testing sample area 1 is smaller or testing sample 2 is larger, test sample is treated
The number for the testing sample 2 that product area 1 can place is less.In the present embodiment, as shown in Fig. 2 the test fixture in testing sample area 1
3 testing samples 2 can be placed, certainly, in other embodiments, the number of testing sample 2 can be one, two even three
More than individual, rationally set as needed.In the present embodiment, testing sample 2 is crimping IGBT module to be measured, certainly,
In other embodiments, testing sample 2 can be bipolar junction transistor either insulated gate bipolar transistor or metal oxidation
Thing semiconductor field effect transistor etc., rationally set as needed.
Fin 3, fin 3 are located in air channel 6, and fin 3 is connected to testing sample by one or more heat pipes 4
2.In the present embodiment, as shown in Fig. 2 each testing sample 2 is each equipped with fin 3, i.e. fin 3 and testing sample 2
Number it is consistent, be 3, can so improve radiating efficiency and be easy to the temperature control of each testing sample 2, certainly,
In other embodiments, the number of fin 3 and testing sample 2 can also be arranged to it is inconsistent, such as only set a fin 3 or
Two testing samples 2 of person share fin 3 etc., rationally set as needed.Air channel 6 is arranged at the interior of insulating box 10
Portion, fin 3 are located in air channel 6, are entered between the air channel 6 and testing sample 2 inside usual insulating box 10 by isolating device 15
Row isolation, as shown in Figure 2.For the ease of the connection of fin 3 and testing sample 2, pass through between fin 3 and testing sample 2
Heat pipe 4 is connected, and perforate can be set in isolating device 15, and heat pipe 4 can connect fin 3 and testing sample 2 through perforate
Connect, the number of heat pipe 4 can be one, or two even more more, the number of heat pipe 4 is more, and thermal conduction effect is got over
Good, the radiating efficiency of testing sample 2 is faster, rationally sets as needed.
Fin 3 is configured with fan 5.Fan 5 can increase the radiating effect of fin 3.In the present embodiment, such as Fig. 3
Shown, testing sample 2 is 4, and each testing sample 2 configures a fin 3, and the number of fin 3 is 4, each to dissipate
Backing 3 is each equipped with fan 5, and therefore, the number of fan 5 is 4, and fan 5 improves the radiating effect of fin 3, by every
Individual fin 3 configures single fan 5, realizes the radiating control of corresponding fin 3 to the independent control of fan 5 so that radiating
Effect is more preferable, control is more convenient and control accuracy is high.
Current collector 7, testing sample 2 is connected to, for gathering the leakage current of testing sample 2.In the present embodiment, such as
Shown in Fig. 1, current collector 7 is current sensor, positioned at the outside of insulating box 10, is series in test loop, by insulating box
High temperature influence that small, long lifespan, reliability are high and the precision of collection leakage current is high；Certainly, in other embodiments, current sense
Device can also be located at the inside of insulating box 10, and current collector 7 can also be accurate sampling resistor, and rationally setting is as needed
Can.
Temperature control system 8, current collector 7 is connected to, for the air quantity according to electric leakage flow control fan 5.Temperature control
System 8 processed is specifically used for the junction temperature that testing sample 2 corresponding with leakage current is searched according to leakage current, and fan 5 is controlled according to junction temperature
Air quantity.According to the leakage current of testing sample 2 under certain test voltage and the corresponding relation of temperature, each is demarcated before testing
The junction temperature curve of testing sample 2, and junction temperature curve is imported in the database of temperature control system 8, tested back by being connected on
Current collector 7 in road, the leakage current of testing sample 2 is gathered in real time, then temperature curve in contrasting data storehouse obtains this and treated
The real-time junction temperature of test sample product 2, real-time junction temperature is obtained into comparative result compared with predetermined value, according to comparative result to fan 5
It is controlled, is specially：When junction temperature is more than predetermined value, it is necessary to increase the rotating speed of fan 5, air output is increased, increases heat dissipation capacity；
When junction temperature is less than predetermined value, it is necessary to reduce the rotating speed of fan 5, reduce air output, reduce heat dissipation capacity；When junction temperature is equal to predetermined value
When, then it need not adjust the rotating speed of fan 5.
Above-mentioned high temperature reverse bias test system, when carrying out high temperature reverse bias test using insulating box, testing sample is configured with scattered
Backing and fan, and coordinate temperature control system control to ensure the stabilization of testing sample junction temperature, there is good heat dissipation effect, temperature
Control the advantages of simple.
Alternatively, as shown in Fig. 2 above-mentioned high temperature reverse bias test system also includes circulate in the wind machine 9, it is arranged at insulating box 10
Inside, for keeping the temperature of insulating box 10 constant, it can preferably keep the uniformity of the same temperature of batch testing sample 2.
Alternatively, as shown in Fig. 2 above-mentioned high temperature reverse bias test system also includes：Temperature sensor 11, radiated for gathering
The temperature of piece 3, in the present embodiment, temperature sensor 11 are the thermocouple being arranged on fin 3, are obtained and dissipated by thermocouple
The temperature of backing 3, thermocouple have the advantages of easy for installation and cost is low, certainly, in other embodiments, or other
Type temperature-detecting device, such as infrared temperature-test sensor or grating temperature transducer, as needed rationally set be
Can；Temperature control system 8 is connected to temperature sensor 11, the wind for the temperature control circulate in the wind machine 9 according to fin 3
Amount.The junction temperature of the system combination testing sample 2 and the temperature control circulate in the wind machine 9 of fin 3 and the air quantity of fan 5, are realized
The junction temperature control of testing sample 2 so that temperature control is more accurate.
In order to increase the radiating effect of testing sample 2, above-mentioned high temperature reverse bias test system also includes heat sink 12, heat sink
12 are configured at the upside and/or downside of testing sample 2.In the present embodiment, as shown in figure 4, testing sample 2 is crimp type IGBT
Module, heat sink 12 are arranged at the upper side and lower side of crimp type IGBT module；Certainly, in other embodiments, can only set
In upside, downside can also be only arranged at, heat sink 12 can also be not provided with when the power of testing sample 2 is smaller, according to need
Rationally to set.
In order to increase the effect of heat insulation between testing sample area 1 and air channel 6, as shown in Fig. 2 above-mentioned high temperature reverse bias test system
System also includes division board 13, and division board 13 is arranged between testing sample area 1 and air channel 6.
In order to provide power supply needed for test to testing sample 2, as shown in Fig. 2 above-mentioned high temperature reverse bias test system also includes
Power supply 14, testing sample 2 is connected to, for providing high-voltage dc voltage for testing sample 2.
The high temperature reverse bias test system that the present embodiment provides can be used for the high temperature of polytype device with PN junction anti-
Bias testing, as bipolar junction transistor (Bipolar Junction Transistor, be abbreviated as BJT), insulated gate bipolar are brilliant
Body pipe (Insulated Gate Bipolar Transistor, be abbreviated as IGBT), metal oxide semiconductor field effect transistor
Manage (Metal Oxide Semicondu-ctor, be abbreviated as MOS), crimp type IGBT etc..Here, with high-power crimp type IBGT
For module to illustrate its annexation and operation principle exemplified by testing sample, Fig. 5 is the company according to single tested crimping IGBT module
Explanation figure is connect, its operation principle is in the test of high-power IGBT module high temperature reverse bias, and power supply 14 crimps IGBT module 2 with tested
Connection, i.e., be connected with the power supply lead wire on insulating box, and same insulating box 10 is put into after tested crimping IGBT module 2 is pressed well
It is interior, all modules is kept same environment temperature；Then introduced after the fin 3 that each module is matched somebody with somebody is connected by heat pipe special
The air channel of door, and realize thermal insulation with division board 13 between insulating box 10 and air channel 6；According to IGBT collection emitter-base bandgap grading leakage current under certain voltage
With the corresponding relation of temperature, the junction temperature curve of each tested module is demarcated before experiment, and imports the number of temperature control system 8
According to storehouse；Read the collection emitter-base bandgap grading leakage current of tested IGBT module 2 in real time by the current collector 7 being connected in test loop, then
Temperature curve in contrasting data storehouse obtains the real-time junction temperature of the module, and the thermocouple 11 by being installed on fin 3 obtains
The temperature of fin 3 is taken, by the two temperature (junction temperature, radiator temperature) input temp control systems and compared with setting value,
Last output control signal is to circulate in the wind machine 9 and fan 5, the air quantity of real-time dynamic regulation calorstat temperature and fin fan
To reach the stable purpose of high-power IGBT module high temperature reverse bias test junction temperature.
Embodiment 2
Originally apply example and a kind of high temperature reverse bias method of testing is provided, the test system in Application Example 1, as shown in fig. 6, including
Following steps：
S1：Gather the leakage current of testing sample 2.Pass through the electric current being series in test loop being connected with testing sample 2
Collector 7 gathers leakage current in real time.In the present embodiment, testing sample 2 is crimping IGBT module to be measured, certainly, in other realities
Apply in example, testing sample 2 can be that bipolar junction transistor either partly lead by insulated gate bipolar transistor or metal oxide
Body field-effect transistor etc., rationally set as needed.
S2：According to the air quantity of electric leakage flow control fan 5；Wherein, testing sample 2 is positioned over testing sample area 1；Fin 3
Testing sample 2 is connected to by one or more heat pipes 4；Fin 3 is configured with fan 5；Fin 3 is located in air channel 6.
In the present embodiment, as shown in fig. 7, step S2 is specifically included：
S21：The junction temperature of testing sample 2 corresponding with leakage current is searched according to leakage current.It is to be measured that each is demarcated before test
The junction temperature curve of sample 2, and junction temperature curve is imported in the database of temperature control system 8, by being connected in test loop
Current collector 7 gather the leakage current of testing sample 2 in real time, then the temperature curve in contrasting data storehouse obtains the testing sample
2 real-time junction temperature.
S22：The air quantity of fan 5 is controlled according to junction temperature.Temperature control system 8 is by real-time junction temperature compared with predetermined value
To comparative result, fan 5 is controlled according to comparative result, specifically, when junction temperature is more than predetermined value, it is necessary to increase fan
5 rotating speed, air output is increased, increase heat dissipation capacity；When junction temperature is less than predetermined value, it is necessary to reduce the rotating speed of fan 5, reduce air-supply
Amount, reduce heat dissipation capacity；When junction temperature is equal to predetermined value, then the rotating speed of fan 5 need not be adjusted.
Above-mentioned high temperature reverse bias method of testing, radiator is configured by testing sample, fan is provided with radiator, passes through temperature
The air quantity of the real-time dynamic regulation fan of controller is spent to reach the stabilization of testing sample junction temperature, and good heat dissipation effect, temperature control are simple
Single, control accuracy height.
Further, it is as shown in figure 8, further comprising the steps of on the basis of above-mentioned high temperature reverse bias method of testing：
S3：Obtain the temperature of fin 3.The temperature of fin 3 is obtained by the temperature sensor 11 being arranged on fin 3
Degree.
S4：According to the air quantity of the temperature control circulate in the wind machine 9 of fin 3.Specifically, when the temperature of fin 3 is higher than
, it is necessary to increase the air quantity of circulate in the wind machine 9 during 10 predetermined temperature value of insulating box, increase heat dissipation capacity；When the temperature of fin 3 is less than
, it is necessary to reduce the air quantity of circulate in the wind machine 9 during 10 predetermined temperature value of insulating box, heat dissipation capacity is reduced；When the temperature of fin 3 is equal to
During 10 predetermined temperature value of insulating box, then the air quantity of circulate in the wind machine 9 need not be adjusted.
In the present embodiment, step S3 and S4 is located at after step S2, certainly, in other embodiments, step S3 and S4
There can be a variety of position relationships, can be located at before step S1, may be located between step S1 and S2, as needed rationally choosing
Select.
Above-mentioned high temperature reverse bias method of testing, by the temperature of radiator and the junction temperature input temp control system of testing sample,
By the real-time dynamic regulation calorstat temperature of temperature control system and heatsink temperature to ensure the stabilization of testing sample junction temperature, temperature
Degree control is more accurate.
Obviously, above-described embodiment is only intended to clearly illustrate example, and is not the restriction to embodiment.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of change or
Change.There is no necessity and possibility to exhaust all the enbodiments.And the obvious change thus extended out or
Among changing still in the protection domain of the invention.
Claims (13)
- A kind of 1. high temperature reverse bias test system, it is characterised in that including：Testing sample area (1), for placing at least one testing sample (2)；Fin (3), the fin (3) are connected to the testing sample (2) by one or more heat pipes (4)；The fin (3) is configured with fan (5)；Air channel (6), the fin (3) are located in the air channel (6)；Current collector (7), the testing sample (2) is connected to, for gathering the leakage current of the testing sample (2)；Temperature control system (8), the current collector (7) is connected to, for the fan (5) according to the electric leakage flow control Air quantity.
- 2. high temperature reverse bias test system according to claim 1, it is characterised in that the temperature control system (8) is specific For searching the junction temperature of the testing sample (2) corresponding with the leakage current according to the leakage current, according to the junction temperature control Make the air quantity of the fan (5).
- 3. high temperature reverse bias test system according to claim 1, it is characterised in that also include：Circulate in the wind machine (9), insulating box (10) inside is arranged at, for keeping the temperature of the insulating box (10) constant.
- 4. according to the high temperature reverse bias test system described in claim 1 or 3, it is characterised in that also include：Temperature sensor (11), for gathering the temperature of the fin (3)；The temperature control system (8) is connected to the temperature sensor (11), for the temperature control according to the fin (3) Make the air quantity of the circulate in the wind machine (9).
- 5. according to any described high temperature reverse bias test systems of claim 1-4, it is characterised in that also include：Heat sink (12), the heat sink (12) are configured at the upside and/or downside of the testing sample (2).
- 6. according to any described high temperature reverse bias test systems of claim 1-5, it is characterised in that also include：Division board (13), the division board (13) are arranged between the testing sample area (1) and the air channel (6).
- 7. high temperature reverse bias test system according to claim 6, it is characterised in that also include：Power supply (14), the testing sample (2) is connected to, for providing high-voltage dc voltage for the testing sample (2).
- 8. according to any described high temperature reverse bias test systems of claim 1-7, it is characterised in that each testing sample (2) fin (3) is each equipped with, each fin (3) is each equipped with the fan (5).
- 9. according to any described high temperature reverse bias test systems of claim 1-8, it is characterised in that the testing sample (2) is Crimping IGBT module to be measured.
- 10. a kind of high temperature reverse bias method of testing, it is characterised in that comprise the following steps：Gather the leakage current of testing sample (2)；According to the air quantity of the electric leakage flow control fan (5)；Wherein, the testing sample (2) is positioned over testing sample area (1)； The fin (3) is connected to the testing sample (2) by one or more heat pipes (4)；The fin (3) is configured with Fan (5)；The fin (3) is located in air channel (6).
- 11. high temperature reverse bias method of testing according to claim 10, it is characterised in that according to the electric leakage flow control fan (5) air quantity includes：The junction temperature of the testing sample (2) corresponding with the leakage current is searched according to the leakage current；The air quantity of the fan (5) is controlled according to the junction temperature.
- 12. high temperature reverse bias method of testing according to claim 11, it is characterised in that methods described also includes：Obtain the temperature of the fin (3)；According to the air quantity of the temperature control circulate in the wind machine (9) of the fin (3).
- 13. according to any described high temperature reverse bias method of testings of claim 10-12, it is characterised in that the testing sample (2) For crimping IGBT module to be measured.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108387831A (en) * | 2018-06-04 | 2018-08-10 | 华北电力大学 | A kind of power cycle pilot system of 3000A semiconductor devices |
| CN109782149A (en) * | 2019-01-30 | 2019-05-21 | 航天科工防御技术研究试验中心 | A kind of Surface Mount field-effect tube aging test method |
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| CN111781481A (en) * | 2020-06-02 | 2020-10-16 | 西安易恩电气科技有限公司 | Clamp adapter for high-temperature anti-deflection test cabinet |
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| CN108387831B (en) * | 2018-06-04 | 2024-01-26 | 华北电力大学 | Power cycle test system of 3000A semiconductor device |
| CN110907786A (en) * | 2018-09-17 | 2020-03-24 | 国网浙江省电力公司 | Method for measuring electrothermal coupling characteristic of thyristor device |
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| CN109782149B (en) * | 2019-01-30 | 2021-06-08 | 航天科工防御技术研究试验中心 | Aging test method for surface-mounted field effect transistor |
| CN111781481A (en) * | 2020-06-02 | 2020-10-16 | 西安易恩电气科技有限公司 | Clamp adapter for high-temperature anti-deflection test cabinet |
| CN113238111A (en) * | 2021-05-11 | 2021-08-10 | 杭州高裕电子科技有限公司 | High-low temperature anti-bias aging test system and control method thereof |
| CN114675119A (en) * | 2022-05-31 | 2022-06-28 | 陕西半导体先导技术中心有限公司 | Semiconductor power device reliability detection box and detection method |
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