CN110907786B - Method for measuring electrothermal coupling characteristic of thyristor device - Google Patents
Method for measuring electrothermal coupling characteristic of thyristor device Download PDFInfo
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- 230000008878 coupling Effects 0.000 title claims abstract description 27
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- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000005259 measurement Methods 0.000 claims abstract description 20
- 238000000691 measurement method Methods 0.000 claims abstract description 7
- 239000003990 capacitor Substances 0.000 claims description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 238000004806 packaging method and process Methods 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 3
- 238000012544 monitoring process Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 238000004146 energy storage Methods 0.000 claims description 2
- 238000002955 isolation Methods 0.000 claims description 2
- 239000000523 sample Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 3
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- 238000010276 construction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
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- G01R31/263—Circuits therefor for testing thyristors
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Abstract
The invention provides a method for measuring the electric-thermal coupling characteristic of a physically packaged thyristor device, which comprises the following steps: step 1, carrying out constant temperature treatment on a physically packaged thyristor device to reach a preset temperature; step 2, measuring one or more of the following parameters of the physically packaged thyristor by using a measurement loop: a gate cathode voltage, a gate cathode current, an anode current and a cathode and anode voltage; step 3, increasing the preset temperature by a certain temperature value, and returning to the step 2; and 4, fitting based on the obtained parameters to form a fitting curve. The measurement method provided by the invention realizes measurement of the electrothermal coupling characteristics of devices such as IGCT/ETO and the like.
Description
Technical Field
The invention belongs to the technical field of power electronics, and particularly relates to a method for measuring the electrothermal coupling characteristic of a thyristor device.
Background
Among the critical power electronics of the dc grid, the converter is the most vulnerable device to failure. Since thermal parameters such as thermal conductivity, heat capacity ratio, thermal expansion coefficient and the like of materials used in physically opposite layers in a device case package such as an Integrated Gate Commutated Thyristor (IGCT) and an emitter turn-off thyristor (ETO) are not completely matched and adapted, fatigue easily occurs in the IGCT, the ETO and the like under the action of thermal stress, and thus, the devices and power electronic devices fail. Therefore, the analysis and measurement of the electric-thermal coupling characteristics in the high-power IGCT/ETO operation process have great academic research significance and engineering utilization value.
Because the chip junction temperature of the IGCT/ETO is often much higher than room temperature during long-time and heavy-load operation in the converter, the junction temperature will significantly affect physical parameters of the semiconductor chip, such as mobility, diffusivity, intrinsic carrier concentration, etc., which indirectly affect minority carrier lifetime, excess carrier concentration, self-built potential, etc. Therefore, the electric characteristics of the IGCT at different temperatures are extracted by setting and controlling the operational junction temperature of the IGCT, and the analysis and measurement of the electric-thermal coupling characteristics are performed on the IGCT.
In the prior art, a measurement mode can be used for measuring the electrothermal coupling characteristics of devices such as an IGCT/ETO device and the like.
Disclosure of Invention
Based on the method, the invention provides an electrothermal coupling characteristic measurement method to realize measurement of electrothermal coupling characteristics of devices such as IGCT/ETO and the like.
A method of measuring an electrical-thermal coupling characteristic of a physically packaged thyristor device, the method comprising:
step 1, carrying out constant temperature treatment on a physically packaged thyristor device to reach a preset temperature;
and 4, fitting based on the obtained parameters to form a fitting curve.
Further, the circuit comprises: a charging circuit and a discharging circuit.
Further, the charging loop comprises a direct current power supply, a first switch and a capacitor which are connected in series.
Further, the discharge loop comprises a capacitor, a second switch, an inductor, a resistor and an interface which are connected in series.
Further, a cathode and anode copper block in a fixture table of the incubator is used for carrying out temperature control on the physical packaging thyristor device.
Furthermore, a thermal resistance wire and a thermocouple are added into the upper copper block and the lower copper block of the clamp table, the thermal resistance wire is heated to adjust the temperature, and the thermocouple is used for measuring and monitoring the temperature to control the temperature.
Further, the parameter is predicted based on the fitted curve.
The electrothermal coupling characteristic measurement method can realize measurement of electrothermal coupling characteristics of devices such as IGCT/ETO and the like. Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings. It is to be understood that both the foregoing general description and the following detailed description are exemplary and are intended to provide further explanation of the claimed technology.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent by describing in more detail embodiments of the present invention with reference to the attached drawings. The accompanying drawings are included to provide a further understanding of the embodiments of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. The drawings are not to be considered as drawn to scale unless explicitly indicated. In the drawings, like reference numbers generally represent the same component or step. In the drawings:
FIG. 1 is a schematic diagram of an IGCT/ETO electrothermal coupling characteristic measurement circuit according to an embodiment of the invention;
FIG. 2 is a schematic diagram of an IGCT/ETO gate cathode voltage measurement method according to an embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, exemplary embodiments according to the present invention will be described in detail below with reference to the accompanying drawings. It is to be understood that the described embodiments are merely a subset of embodiments of the invention and not all embodiments of the invention, with the understanding that the invention is not limited to the example embodiments described herein. All other embodiments, which can be derived by a person skilled in the art from the embodiments described herein without inventive step, are intended to be within the scope of the present invention. In the present specification and the drawings, substantially the same elements and functions will be denoted by the same reference numerals, and repetitive description thereof will be omitted. Moreover, descriptions of functions and constructions well known in the art may be omitted for clarity and conciseness.
The embodiment of the invention starts from an IGCT/ETO temperature control method and an electrothermal characteristic measuring circuit, can accurately control the temperature of an IGCT/ETO device under the condition of increasing the commutation volume capacity without changing an IGCT/ETO packaging structure, and measures key electrical parameters such as gate cathode voltage, anode current and the like at different temperatures of the IGCT/ETO, thereby realizing the cooperative analysis of the electrothermal coupling characteristics of the device. And the cooperative analysis of the electrothermal coupling characteristics can reduce the cost paid for the running safety margin of the system for the application occasions such as the converter, realize higher running efficiency of the converter and improve the overall reliability of the equipment.
The principle of the existing temperature control measuring method for the power electronic device is that a thermal resistance wire and a thermocouple are added into an upper copper block and a lower copper block of a clamp table, the temperature is adjusted by heating the thermal resistance wire, and the temperature is controlled by measuring and monitoring the temperature through the thermocouple. But for the typical physical package structure of IGCT/ETO this is very likely to lead to non-uniformity of the package lateral and longitudinal temperature distribution. The spatial position of the heating hot resistance wire in the copper block of the fixture table can cause uneven temperature distribution on the transverse surface of the tube shell, and the heating method can cause uneven temperature distribution among all physical layers of the tube shell package in the longitudinal direction. The embodiment of the invention utilizes a controllable temperature thermostat to research and design a temperature control measuring system and a measuring method aiming at the electrothermal coupling characteristic of an IGCT/ETO device.
The measurement of the electrothermal coupling characteristic of the thyristor device is exemplarily illustrated by using the IGCT/ETO as a physical packaging thyristor device in the embodiment of the invention. FIG. 1 shows an IGCT/ETO electrothermal coupling characteristic measurement circuit according to an embodiment of the invention. The circuit shown in fig. 1 comprises a direct current power supply DC, a switch K1, a switch K2, an inductor Ls, a resistor Rs, an interface and a capacitor C1. The direct-current power supply DC, the switch K1, the switch K2, the inductor Ls, the resistor Rs and the interface are connected in series, and the capacitor C1 is connected with the direct-current power supply DC and the switch K1 in series. The connection mode shown in fig. 1 is such that the DC power supply DC, the switch K1 and the capacitor C1 form a charging circuit, and the capacitor C1, the switch K2, the inductor Ls, the resistor Rs and the interface form a discharging circuit.
The IGCT/ETO and other physical packaging thyristor devices can be used as a device to be measured DUT to be installed in the interface, so that measurement of the electric-thermal coupling characteristics of the IGCT/ETO and other physical packaging thyristor devices is realized.
In the embodiment of the invention, a control device is further arranged and is used for controlling the on-off of the switch K1 and the switch K2.
First, the switch K1 can be controlled to be closed and the switch K2 can be controlled to be opened by the control device. At this time, the DC power supply DC, the switch K1, and the capacitor C1 form a charging circuit. In the charging circuit, the DC power supply DC charges a capacitor C1 in the charging circuit.
After the capacitor C1 is charged, the control device may control the switch K1 to be turned off and the switch K2 to be turned on. At this time, the capacitor C1, the switch K2, the inductor Ls, the resistor Rs and the interface form a discharge loop. After a discharge loop is formed, the charge in the capacitor C1 is discharged in the discharge loop, and a current flows through the switch K2, enters a physically packaged thyristor device such as an IGCT/ETO through an inductor Ls and a resistor Rs, and finally returns to the capacitor C1 to realize discharge.
Based on the above loop, in the embodiment of the present invention, the method for measuring the electrothermal coupling characteristics mainly includes the following steps:
firstly, placing a tested IGCT/ETO device in a temperature-controllable thermostat, enabling a connected cable and the like to penetrate through a round hole in the wall of the thermostat, adjusting the temperature by using the thermostat, keeping the required temperature in a box body, and after a sufficiently large time constant (namely a plurality of hours, such as 3-5 hours), considering that the tested IGCT/ETO device placed in the box body is at the required temperature (such as 80 ℃) as a whole;
in a second step, the measurement circuit of fig. 1 is connected. FIG. 2 is a schematic diagram of the IGCT/ETO gate cathode voltage measurement method, as shown in FIG. 2, where reference numerals 1 and 3 are gate cathodes on the device, and reference numerals 2 and 4 are gate cathode connection points on the gate drive. The MOSFET is a switching element on a gate electrode drive, and gate cathode current passes through the MOSFET. The capacitor C1 and the capacitor C2 are energy storage elements on the gate drive. In the embodiment of the present invention, a plurality of capacitors may be connected in the switching-off process, and the dashed lines in fig. 2 indicate that the connected capacitors utilize gate cathode voltage interfaces (reference numbers 2 and 4 in fig. 2) reserved on the gate level driver to connect with a dupont line and measure the gate cathode voltage VGK by using the kelvin voltage measurement method, and it can be considered that the voltage values measured at the reference numbers 2 and 4 are approximately equal to the gate cathodes at the reference numbers 1 and 3. And simultaneously, cathode current IGK and anode current IA of the gate are measured by using the Rogowski coil, and cathode and anode voltage VAK is measured by using a high-voltage isolation voltage probe. By this step, four key electrical parameters can be measured simultaneously: gate cathode voltage VGK, gate cathode current IGK, anode current IA, and cathode anode voltage VAK;
the third step: the switch K1 is controlled to be closed by the control unit, the bus capacitor C1 is charged by a direct-current voltage generator in the measurement loop, the IGCT/ETO keeps a conducting state under the control of the device gate-level driving unit, the switch K2 is controlled to be closed, the device passes through a sinusoidal current, and four electrical parameters are measured according to the second step; in this third step, the temperature of the oven is adjusted to increase the temperature from 25 ℃ to 125 ℃ at predetermined intervals, which may be 10 ℃ in an embodiment of the present invention. Repeating the second and third steps for each increase in temperature at the predetermined interval;
the fourth step: prediction of electrical characteristics of the IGCT/ETO device at any temperature from 25 ℃ to 125 ℃ may be accomplished by polynomial mathematical fitting, with predicted electrical parameters including, but not limited to, gate cathode voltage current, etc.
In the IGCT/ETO temperature control method part, the temperature control method of the invention has the following characteristics: 1. the temperature of the constant temperature box can be regulated from minus 20 ℃ to 140 ℃ and can be controlled to be constant, and the measurement of the electrothermal coupling characteristics of the IGCT/ETO device under all operating conditions and working conditions can be met. 2. The temperature-controllable thermostat can ensure that the same temperature is kept in the box body, so that the temperatures of different physical space position points are kept consistent, and the nonuniformity of transverse temperature distribution is reduced. 3. The temperature control method can ensure that the physical layers of the device tube package are in cooperative consistency, the heat dissipation space path is ensured to be uniform, and the longitudinal temperature distribution nonuniformity is reduced.
In the electric heating characteristic measuring circuit part, the measuring circuit in the invention has the following characteristics: 1. the measurement of key electrical parameters of the IGCT/ETO device can be realized, and the electrical parameters comprise but are not limited to gate cathode voltage, anode current and the like. 2. The cable connection mode is concise and refined, and the stray parameters of the loop are ensured to be at a lower level.
The measuring method of the IGCT/ETO electrothermal coupling characteristic described by the invention mainly has the following characteristics: 1. the measurement of the electrical characteristics of the IGCT/ETO device from-20 ℃ to 140 ℃ can be realized, and the measured electrical parameters comprise but are not limited to gate cathode voltage, anode current and the like. 2. Prediction of electrical characteristics of the IGCT/ETO device at any temperature from-20 ℃ to 140 ℃ may be achieved by polynomial mathematical fitting, with predicted electrical parameters including, but not limited to, gate-cathode voltage, anode current, etc. 3. Compared with an IGCT/ETO tube shell packaging structure, physical packaging does not need to be changed or the volume capacity of the converter does not need to be increased, and convenience is brought to measurement implementation.
Those skilled in the art will understand that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art may modify the technical solutions described in the foregoing embodiments or may substitute some or all of the technical features; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions.
Claims (4)
1. A method of measuring an electrical-thermal coupling characteristic of a physically packaged thyristor device, the method comprising:
step 1, carrying out constant temperature treatment on a physically packaged thyristor device to reach a preset temperature;
step 2, measuring one or more of the following parameters of the physically packaged thyristor by using a measurement loop: a gate cathode voltage, a gate cathode current, an anode current and a cathode and anode voltage;
the circuit comprises: a charging circuit and a discharging circuit;
the charging loop comprises a direct current power supply, a first switch and a capacitor which are connected in series;
the discharge loop comprises a capacitor, a second switch, an inductor, a resistor and an interface which are connected in series;
the physical packaging thyristor device is an IGCT/ETO device, and the IGCT/ETO device is used as a device to be measured and is arranged in the interface;
the MOSFET is a switching element on the gate drive, the gate cathode current passes through the MOSFET, and the capacitor C1 and the capacitor C2 are energy storage elements on the gate drive; a plurality of capacitors can be connected in the switching-on and switching-off process, and the connected capacitors measure the gate cathode voltage VGK by connecting a DuPont wire with a gate cathode voltage interface reserved on a gate level drive in combination with a Kelvin voltage measurement method; simultaneously, cathode current IGK and anode current IA of a Rogowski coil measuring gate and cathode and anode voltage VAK of a high-voltage isolation voltage probe are measured;
controlling the first switch to be closed through the control unit, charging a bus capacitor C1 by using a direct-current voltage generator in the measurement loop, keeping the IGCT/ETO in a conducting state under the control of the device gate-level driving unit, closing the device through the second switch, enabling the device to pass a sinusoidal current, and measuring the gate cathode voltage, the gate cathode current, the anode current and the cathode and anode voltages according to the step 2;
step 3, increasing the preset temperature by a certain temperature value, and returning to the step 2;
and 4, fitting based on the obtained parameters to form a fitting curve.
2. The method for measuring an electrical-thermal coupling characteristic of a physically packaged thyristor device according to claim 1,
and controlling the temperature of the physical packaging thyristor device by using a cathode and anode copper block in a fixture table of the thermostat.
3. The method for measuring an electrical-thermal coupling characteristic of a physically packaged thyristor device according to claim 2,
by adding the thermal resistance wire and the thermocouple into the upper copper block and the lower copper block of the clamp table, the temperature can be adjusted by heating the thermal resistance wire, and the temperature can be controlled by measuring and monitoring the temperature by the thermocouple.
4. The method for measuring an electrical-thermal coupling characteristic of a physically packaged thyristor device according to claim 1,
predicting the parameter based on the fitted curve.
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