CN105004427A - Device and method for precisely testing temperature distribution of semiconductor device - Google Patents
Device and method for precisely testing temperature distribution of semiconductor device Download PDFInfo
- Publication number
- CN105004427A CN105004427A CN201510396974.0A CN201510396974A CN105004427A CN 105004427 A CN105004427 A CN 105004427A CN 201510396974 A CN201510396974 A CN 201510396974A CN 105004427 A CN105004427 A CN 105004427A
- Authority
- CN
- China
- Prior art keywords
- temperature
- host computer
- temperature distribution
- module
- test
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The invention discloses a device and a method for precisely testing temperature distribution of semiconductor device. The device comprises a core control module, a big and small constant current source module, a high-speed current switching module, a thermotank, a high-speed data acquisition module, an infrared thermal imaging system, an upper computer and a power supply module. The method comprises the steps of: providing an adjustable constant-temperature environment and a precise test current to a device to be detected; recording the environment temperature and obtaining a K coefficient by means of linear fitting corresponding to a positive pressure drop; heating the current so as to heat the device to be detected to a stable state, and then switching to the test current at a high speed; rapidly sampling the positive pressure drop and carrying out conversion on the positive pressure drop and the K coefficient to obtain a cooling curve; processing the cooling curve with a fitting and smoothing method so as to obtain a more precise and complete cooling curve; and simultaneously using the infrared thermal imaging system to shoot a temperature distribution diagram. A precise temperature distribution graph can be obtained by using precise cooling curve temperatures to calibrate the temperature distribution diagram. According to the invention, an electric testing method is used to calibrate an infrared thermogram, and high precision of semiconductor device temperature distribution testing is realized.
Description
Technical field
The invention belongs to semiconductor device transient heat technical field of measurement and test, be specifically related to a kind of apparatus and method for accurate semiconductor test Temperature Distribution.
Background technology
Power semiconductor device is the electronic product of high heating, and the maximum junction temperature Tjm whether life of product and normally work and product work junction temperature Tj exceed permission is closely related.Tjm is the important ratings of device, is integrated technology and quality level index, and other a lot of important technology indexs of device are all embodied by Tjm and ensure.For great power LED, the increase of its working current can produce a large amount of heats, LED chip pn is caused to tie the marked change of junction temperature, important impact is produced on the performance of LED, cause forward voltage drop change, colour temperature change, red shift of wavelength, photoelectric transformation efficiency step-down etc., affect its luminosity, colourity and electric parameter.Therefore, the junction temperature of measured power semiconductor devices is the important prerequisite of available heat management quickly and accurately.
Thermal infrared imager is that the infrared energy distribution pattern utilizing infrared eye and optical imagery object lens to accept measured target is reflected on the light activated element of infrared eye, thus acquisition Infrared Thermogram, this thermography is corresponding with the heat distribution field of body surface.Generally thermal infrared imager is exactly that the invisible infrared energy sent by object changes visible thermography into.On thermography, different colours represents the different temperatures of testee.But because thermal infrared imager belongs to non-contact testing instrument, the impact by intermediate medium and test environment during measurement is comparatively large, and therefore, the Temperature Distribution precision of Infrared Thermogram is lower, accurately can not reflect the Temperature Distribution of shooting area.Measuring accuracy as German InfraTec (Ying Fu Tyke) high precision thermal infrared imager VarioCAM hr research (be called for short VCr) is only ± and 1 DEG C.Therefore, correcting Infrared Thermogram by contact temperature-measuring method can make the measuring accuracy of Infrared Thermogram greatly improve.
Summary of the invention
For the defect that prior art exists, the object of the present invention is to provide a kind of apparatus and method for accurate semiconductor test Temperature Distribution, precision is high, error is little, good stability.
For achieving the above object, the present invention adopts following technical proposals:
A kind of device for accurate semiconductor test Temperature Distribution, comprise host computer, core control panel, high speed electric current handover module, size constant current source module, thermal infrared imager, constant temperature oven, high-Speed Data-Acquisition Module, described host computer is connected with core control panel serial ports, described core control panel connects high speed electric current handover module successively, size constant current source module and constant temperature oven, described thermal infrared imager connects host computer, described high speed electric current handover module, size constant current source module, thermal infrared imager connects the device under test in constant temperature oven respectively, described device under test connects host computer by high-Speed Data-Acquisition Module.
Described constant temperature oven is dry type constant temperature oven, control accuracy >=0.5 DEG C.
Current ripples coefficient≤1% of described size constant current source module.
For a method for accurate semiconductor test Temperature Distribution, apply above-mentioned device, comprise the steps:
A. device under test is positioned in constant temperature oven, and between device under test and constant temperature oven uniform application Heat Conduction Material;
B. input test current value in host computer, sends core control panel to and drives size constant current source module, for device under test provides measuring current;
C. in host computer, input initial temperature value and stepping temperature value, send core control panel to and drive constant temperature oven to provide varying environment temperature for device under test, the magnitude of voltage that high-Speed Data-Acquisition Module gathers under corresponding temperature is also uploaded to host computer;
D. the magnitude of voltage under varying environment temperature and corresponding temperature is carried out linear fit and obtains k-factor by host computer;
E. in host computer, input heating current value, measuring current value, heat time and test duration, sending core control panel to drives size constant current source module to provide heating current for device under test, after time to be heated terminates, heating current is switched to measuring current rapidly by high speed electric current handover module, magnitude of voltage under high speed acquisition module acquires measuring current, simultaneously thermal infrared imager record corresponding temperature changes in distribution;
F. change in voltage is sent to host computer by high speed acquisition module, and voltage variety and k-factor are divided by and obtain cooling curve by host computer;
G. in host computer, adopt approximating method to the data fitting in this cooling curve leading portion short time, by the smoothing cooling curve obtaining more accurate and complete reflection device under test temperature again after the data after matching and back segment Data Integration;
H. the temperature profile of the temperature of accurate cooling curve and thermal infrared imager record corrects and obtains accurate temperature profile by host computer.
Described step c high speed data acquisition module sampling rate >=1M/s.
Described step e high speed current switching module switching time≤1 μ s.
Approximating method in described step g comprises square root approximating method and exponentially fitted method, and described smoothing method comprises that Fourier expansion is level and smooth and regularization is level and smooth; Wherein exponentially fitted method is intended to cooperate with also having smoothing effect for noisy cooling curve signal is existing, and therefore exponentially fitted method is by matching and smoothly merges into a step, and all the other approximating methods and smoothing method are two steps; To actual measurement cooling curve matching and the random error that smoothly effectively can improve test data.
The present invention compared with prior art, has following apparent outstanding substantive distinguishing features and marked improvement:
The present invention, by design embedded control system, for device under test provides corresponding test setting and test environment, can obtain the exact value of device temperature, corrects Infrared Thermogram, thus obtain the precise temperature profile of accurate Infrared Thermogram with this exact value.The present invention has that precision is high, error is little, the feature of good stability, can carry out precise temperature profile test by apparatus of the present invention and method to semiconductor devices.
Accompanying drawing explanation
Fig. 1 is the process flow diagram of the present invention for the method for accurate semiconductor test Temperature Distribution.
Fig. 2 is the structural representation of the present invention for the device of accurate semiconductor test Temperature Distribution.
Embodiment
Below in conjunction with accompanying drawing, to the preferred embodiments of the present invention, details are as follows:
As shown in Figure 2, a kind of device for accurate semiconductor test Temperature Distribution, comprise host computer 1, core control panel 2, high speed electric current handover module 3, size constant current source module 4, thermal infrared imager 5, constant temperature oven 6, high-Speed Data-Acquisition Module 7, described host computer 1 is connected with core control panel 2 serial ports, described core control panel 2 connects high speed electric current handover module 3 successively, size constant current source module 4 and constant temperature oven 6, described thermal infrared imager 5 connects host computer 1, described high speed electric current handover module 3, size constant current source module 4, thermal infrared imager 5 connects the device under test in constant temperature oven 6 respectively, described device under test connects host computer 1 by high-Speed Data-Acquisition Module 7.
Described constant temperature oven 6 is dry type constant temperature oven, control accuracy >=0.5 DEG C.
Current ripples coefficient≤1% of described size constant current source module 4.
As shown in Figure 1, a kind of method for accurate semiconductor test Temperature Distribution, applies above-mentioned device, comprises the steps:
A. device under test is positioned in constant temperature oven 6, and between device under test and constant temperature oven 6 uniform application Heat Conduction Material;
B. input test current value in host computer 1, sends core control panel 2 to and drives size constant current source module 4, for device under test provides measuring current;
C. in host computer 1, input initial temperature value and stepping temperature value, send core control panel 2 to and drive constant temperature oven 6 to provide varying environment temperature for device under test, high-Speed Data-Acquisition Module 7 gathers the magnitude of voltage under corresponding temperature and is uploaded to host computer 1;
D. the magnitude of voltage under varying environment temperature and corresponding temperature is carried out linear fit and obtains k-factor by host computer 1;
E. in host computer 1, heating current value, measuring current value, heat time and test duration is inputted, sending core control panel 2 to drives size constant current source module 4 to provide heating current for device under test, after time to be heated terminates, heating current is switched to measuring current rapidly by high speed electric current handover module 3, magnitude of voltage under high speed acquisition module 7 collecting test electric current, thermal infrared imager 5 records corresponding temperature changes in distribution simultaneously;
F. change in voltage is sent to host computer 1 by high speed acquisition module 7, and voltage variety and k-factor are divided by and obtain cooling curve by host computer 1;
G. in host computer 1, adopt approximating method to the data fitting in this cooling curve leading portion short time, by the smoothing cooling curve obtaining more accurate and complete reflection device under test temperature again after the data after matching and back segment Data Integration;
H. the temperature profile that the temperature of accurate cooling curve and thermal infrared imager 5 record corrects and obtains accurate temperature profile by host computer 1.
Described step c high speed data acquisition module 7 sampling rates >=1M/s.
Described step e high speed current switching module 3 switching time≤1 μ s.
Approximating method in described step g comprises square root approximating method and exponentially fitted method, and described smoothing method comprises that Fourier expansion is level and smooth and regularization is level and smooth; Wherein exponentially fitted method is intended to cooperate with also having smoothing effect for noisy cooling curve signal is existing, and therefore exponentially fitted method is by matching and smoothly merges into a step, and all the other approximating methods and smoothing method are two steps; To actual measurement cooling curve matching and the random error that smoothly effectively can improve test data.
Principle of the present invention is as follows:
The present embodiment device is in test process, semiconductor devices pn is utilized to tie linear relationship good between forward voltage drop and junction temperature, for device under test provides adjustable thermostatic environment and accurate measuring current, measuring current is the electric current making device under test forward conduction but non-self-heating, and record environment temperature and corresponding forward voltage drop linear fit can obtain the k-factor under this measuring current; Then under heating current, device under test is heated to steady state (SS), switch to measuring current at a high speed, due to the diffusion of heat, the forward voltage drop of device under test presents transient state uphill process, fast carry out sampling to this process and and k-factor be converted to the cooling curve of device under test, this cooling curve accurately reflects the temperature of device under test, and the temperature profile of this process taken by thermal infrared imager simultaneously.The temperature profile that the accurate temperature obtained with electricity method of testing corrects thermal infrared imager can obtain accurate temperature profile.
Claims (7)
1. the device for accurate semiconductor test Temperature Distribution, it is characterized in that, comprise host computer (1), core control panel (2), high speed electric current handover module (3), size constant current source module (4), thermal infrared imager (5), constant temperature oven (6), high-Speed Data-Acquisition Module (7), described host computer (1) is connected with core control panel (2) serial ports, described core control panel (2) connects high speed electric current handover module (3) successively, size constant current source module (4) and constant temperature oven (6), described thermal infrared imager (5) connects host computer (1), described high speed electric current handover module (3), size constant current source module (4), thermal infrared imager (5) connects the device under test in constant temperature oven (6) respectively, described device under test connects host computer (1) by high-Speed Data-Acquisition Module (7).
2. the device for accurate semiconductor test Temperature Distribution according to claim 1, is characterized in that: described constant temperature oven (6) is dry type constant temperature oven, control accuracy >=0.5 DEG C.
3. the device for accurate semiconductor test Temperature Distribution according to claim 1, is characterized in that: current ripples coefficient≤1% of described size constant current source module (4).
4., for a method for accurate semiconductor test Temperature Distribution, apply device as claimed in claim 1, it is characterized in that, comprise the steps:
A. device under test is positioned in constant temperature oven (6), and between device under test and constant temperature oven (6) uniform application Heat Conduction Material;
B. input test current value in host computer (1), sends core control panel (2) to and drives size constant current source module (4), for device under test provides measuring current;
C. input initial temperature value and stepping temperature value in host computer (1), sending core control panel (2) to drives constant temperature oven (6) to provide varying environment temperature for device under test, and the magnitude of voltage that high-Speed Data-Acquisition Module (7) gathers under corresponding temperature is also uploaded to host computer (1);
D. the magnitude of voltage under varying environment temperature and corresponding temperature is carried out linear fit and obtains k-factor by host computer (1);
E. input heating current value, measuring current value, heat time and the test duration in host computer (1), sending core control panel (2) to drives size constant current source module (4) to provide heating current for device under test, after time to be heated terminates, heating current is switched to measuring current rapidly by high speed electric current handover module (3), magnitude of voltage under high speed acquisition module (7) collecting test electric current, simultaneously thermal infrared imager (5) record corresponding temperature changes in distribution;
F. change in voltage is sent to host computer (1) by high speed acquisition module (7), and voltage variety and k-factor are divided by and obtain cooling curve by host computer (1);
G. adopt in the host computer (1) approximating method to the data fitting in this cooling curve leading portion short time, by the smoothing cooling curve obtaining more accurate and complete reflection device under test temperature again after the data after matching and back segment Data Integration;
H. the temperature profile that the temperature of accurate cooling curve and thermal infrared imager (5) record corrects and obtains accurate temperature profile by host computer (1).
5. the method for accurate semiconductor test Temperature Distribution according to claim 4, is characterized in that: described step c high speed data acquisition module (7) sampling rate >=1M/s.
6. the method for accurate semiconductor test Temperature Distribution according to claim 4, is characterized in that: described step e high speed current switching module (3) switching time≤1 μ s.
7. the method for accurate semiconductor test Temperature Distribution according to claim 4, it is characterized in that: the approximating method in described step g comprises square root approximating method and exponentially fitted method, described smoothing method comprises that Fourier expansion is level and smooth and regularization is level and smooth; Wherein exponentially fitted method is intended to cooperate with also having smoothing effect for noisy cooling curve signal is existing, and therefore exponentially fitted method is by matching and smoothly merges into a step, and all the other approximating methods and smoothing method are two steps; To actual measurement cooling curve matching and the random error that smoothly effectively can improve test data.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510396974.0A CN105004427B (en) | 2015-07-08 | 2015-07-08 | Device and method for accurately testing semiconductor device temperature distribution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510396974.0A CN105004427B (en) | 2015-07-08 | 2015-07-08 | Device and method for accurately testing semiconductor device temperature distribution |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105004427A true CN105004427A (en) | 2015-10-28 |
| CN105004427B CN105004427B (en) | 2018-08-17 |
Family
ID=54377187
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510396974.0A Active CN105004427B (en) | 2015-07-08 | 2015-07-08 | Device and method for accurately testing semiconductor device temperature distribution |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105004427B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109270381A (en) * | 2018-10-30 | 2019-01-25 | 杭州高坤电子科技有限公司 | The load of four tunnel independent electronics controls and measures junction temperature system and its junction temperature measurement method |
| CN110907786A (en) * | 2018-09-17 | 2020-03-24 | 国网浙江省电力公司 | Method for measuring electrothermal coupling characteristic of thyristor device |
| CN113777474A (en) * | 2021-11-10 | 2021-12-10 | 北京京瀚禹电子工程技术有限公司 | Test method and system for temperature-resistant aging test of integrated circuit |
| CN114061756A (en) * | 2020-07-29 | 2022-02-18 | 山东炎一智能科技有限公司 | Infrared thermometer |
| CN114859216A (en) * | 2022-07-07 | 2022-08-05 | 河北中电科航检测技术服务有限公司 | Intelligent working device for circuit board detection |
| TWI840451B (en) * | 2018-11-29 | 2024-05-01 | 日商東京威力科創股份有限公司 | Temperature control device, temperature control method and electronic component inspection device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101266280A (en) * | 2008-05-13 | 2008-09-17 | 上海大学 | High power light-emitting diode heat resistance and junction temperature test system |
| CN201555900U (en) * | 2009-11-02 | 2010-08-18 | 绍兴旭昌科技企业有限公司 | Device for testing steady state thermal resistance and junction temperature of micro-single-phase full-wave bridge rectifier |
| CN102096035A (en) * | 2010-11-22 | 2011-06-15 | 金天 | Thermal cycling load test system for diode |
| CN103344902A (en) * | 2013-07-10 | 2013-10-09 | 上海大学 | LED transient thermal resistance measuring system |
| CN103592590A (en) * | 2013-11-12 | 2014-02-19 | 上海大学 | System and method for testing light-electricity-heat integration of LED device |
-
2015
- 2015-07-08 CN CN201510396974.0A patent/CN105004427B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101266280A (en) * | 2008-05-13 | 2008-09-17 | 上海大学 | High power light-emitting diode heat resistance and junction temperature test system |
| CN201555900U (en) * | 2009-11-02 | 2010-08-18 | 绍兴旭昌科技企业有限公司 | Device for testing steady state thermal resistance and junction temperature of micro-single-phase full-wave bridge rectifier |
| CN102096035A (en) * | 2010-11-22 | 2011-06-15 | 金天 | Thermal cycling load test system for diode |
| CN103344902A (en) * | 2013-07-10 | 2013-10-09 | 上海大学 | LED transient thermal resistance measuring system |
| CN103592590A (en) * | 2013-11-12 | 2014-02-19 | 上海大学 | System and method for testing light-electricity-heat integration of LED device |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110907786A (en) * | 2018-09-17 | 2020-03-24 | 国网浙江省电力公司 | Method for measuring electrothermal coupling characteristic of thyristor device |
| CN110907786B (en) * | 2018-09-17 | 2022-03-22 | 国网浙江省电力公司 | Method for measuring electrothermal coupling characteristic of thyristor device |
| CN109270381A (en) * | 2018-10-30 | 2019-01-25 | 杭州高坤电子科技有限公司 | The load of four tunnel independent electronics controls and measures junction temperature system and its junction temperature measurement method |
| TWI840451B (en) * | 2018-11-29 | 2024-05-01 | 日商東京威力科創股份有限公司 | Temperature control device, temperature control method and electronic component inspection device |
| CN114061756A (en) * | 2020-07-29 | 2022-02-18 | 山东炎一智能科技有限公司 | Infrared thermometer |
| CN113777474A (en) * | 2021-11-10 | 2021-12-10 | 北京京瀚禹电子工程技术有限公司 | Test method and system for temperature-resistant aging test of integrated circuit |
| CN113777474B (en) * | 2021-11-10 | 2022-03-15 | 北京京瀚禹电子工程技术有限公司 | Test method and system for temperature-resistant aging test of integrated circuit |
| CN114859216A (en) * | 2022-07-07 | 2022-08-05 | 河北中电科航检测技术服务有限公司 | Intelligent working device for circuit board detection |
| CN114859216B (en) * | 2022-07-07 | 2022-09-09 | 河北中电科航检测技术服务有限公司 | Intelligent working device for circuit board detection |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105004427B (en) | 2018-08-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105004427A (en) | Device and method for precisely testing temperature distribution of semiconductor device | |
| CN102944824B (en) | Test method for testing rectifier diode transient high temperature reverse leakage current | |
| CN107621599B (en) | Method for measuring junction temperature change of IGBT in high-temperature reverse bias test | |
| CN102297735A (en) | Standard constant temperature bath touch screen intelligent measurement control and automatic metering detection system | |
| CN105203591B (en) | The measurement method of spacecraft testing model hot wall heat flow density | |
| CN103344902A (en) | LED transient thermal resistance measuring system | |
| CN103954900A (en) | Method for measuring steady-state thermal resistance value of IGBT | |
| CN108247424B (en) | Method and device for testing machining temperature of machine tool | |
| US11581695B2 (en) | High-frequency-reproducibility laser frequency stabilization method and device based on multi-point acquisition of laser tube temperature | |
| TW201321744A (en) | Highly adaptive thermal properties measurement system and measuring method thereof | |
| CN103175624A (en) | Non-contact LED junction temperature measurement method and device | |
| CN103884737A (en) | Infrared phase lock thermal wave detection method and system for thermal diffusivity of carbon fiber bundle | |
| CN103808756A (en) | Method for measuring steady-state thermal resistance value of IGBT | |
| Qu et al. | Temperature dependency of the fill factor in PV modules between 6 and 40 C | |
| CN103592590A (en) | System and method for testing light-electricity-heat integration of LED device | |
| CN101936775A (en) | Combined measuring device and method for air outlet temperature filed of wind tube | |
| CN103926517A (en) | Device and method for testing thermal resistance of power type LED | |
| CN103344662A (en) | Semiconductor device transient heat testing device | |
| CN208366471U (en) | It is a kind of for automatically determining the device of the minimum discernable temperature difference of infrared thermoviewer | |
| CN113203768A (en) | Thermal conductivity testing method of anisotropic material based on laser heating | |
| CN104569065A (en) | Rapid evaluation method for cooling property of solid crystal layer of high-power LED apparatus | |
| CN109506813B (en) | Annealing method in calibration process of temperature measurement crystal sensor | |
| CN102981529A (en) | Blackbody temperature control device for testing infrared dynamic tracking characteristics | |
| CN201788023U (en) | Combined measuring device for temperature fields at air outlet of hair dryer | |
| CN209460177U (en) | The measuring device of thermal expansion coefficient |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |