CN105004427B - Device and method for accurately testing semiconductor device temperature distribution - Google Patents
Device and method for accurately testing semiconductor device temperature distribution Download PDFInfo
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- CN105004427B CN105004427B CN201510396974.0A CN201510396974A CN105004427B CN 105004427 B CN105004427 B CN 105004427B CN 201510396974 A CN201510396974 A CN 201510396974A CN 105004427 B CN105004427 B CN 105004427B
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Abstract
The invention discloses a kind of device and method for accurately testing semiconductor device temperature distribution.Apparatus of the present invention include kernel control module, size constant current source module, high speed current switching module, insulating box, high-Speed Data-Acquisition Module, thermal infrared imager, host computer and power module.The method of the present invention includes providing adjustable thermostatic environment for device under test and accurately testing electric current, record environment temperature and corresponding forward voltage drop linear fit obtain k-factor, device under test is heated to switching at high speed after stable state to test electric current by heated current, quick sampling forward voltage drop is simultaneously converted to cooling curve with k-factor, more accurate and complete cooling curve is obtained with fitting and smoothing method processing cooling curve, while thermal infrared imager shoots temperature profile.Accurate temperature profile can be obtained with accurate cooling curve temperature correction temperature profile.The present invention corrects Infrared Thermogram using electrical testing method, has high precision in terms of semiconductor device temperature distribution tests.
Description
Technical field
The invention belongs to semiconductor device transient heat technical field of measurement and test, and in particular to one kind is for accurately testing semiconductor
The device and method of device temperature distribution.
Background technology
Power semiconductor is the electronic product of high fever, and life of product and normal work are with product working junction temperature Tj
It is no closely related more than the maximum junction temperature Tjm allowed.Tjm is the important rated value of device, is integrated technology and quality level
Index, other many important technology indexs of device are embodied and ensure by Tjm.By taking great power LED as an example, work
The increase of electric current will produce a large amount of heat, cause the significant changes of LED chip pn-junction junction temperature, be generated to the performance of LED important
Influence, cause forward voltage drop change, color temperature change, red shift of wavelength, photoelectric conversion efficiency become it is low, influence its luminosity, coloration
And electric parameter.Therefore, quickly and accurately the junction temperature of measured power semiconductor devices be effective heat management important prerequisite.
Thermal infrared imager is the infrared energy point for receiving measured target using infrared detector and optical imagery object lens
The reflection of cloth figure is on the light-sensitive element of infrared detector, to obtain Infrared Thermogram, this thermography and body surface
Heat distribution field is corresponding.Generally thermal infrared imager is exactly that the invisible infrared energy that object is sent out is changed into visible heat
As figure.Different colours represent the different temperatures of testee on thermography.But since thermal infrared imager belongs to non-contact testing
Instrument, when measurement, are affected by intermediate medium and test environment, and therefore, the Temperature Distribution precision of Infrared Thermogram is relatively low, no
It can accurately reflect the Temperature Distribution of shooting area.Such as German InfraTec (Tykes Ying Fu) high-precision thermal infrared imager VarioCAM
The measurement accuracy of hr research (abbreviation VCr) is only ± 1 DEG C.Therefore, infrared thermal imagery is corrected with contact temperature-measuring method
Figure can be such that the measurement accuracy of Infrared Thermogram greatly improves.
Invention content
In view of the defects existing in the prior art, the purpose of the present invention is to provide one kind for accurately testing semiconductor devices
The device and method of Temperature Distribution, precision is high, error is small, stability is good.
In order to achieve the above objectives, the present invention uses following technical proposals：
A kind of device for accurately testing semiconductor device temperature distribution, including host computer, core control panel, high speed electricity
Flow handover module, size constant current source module, thermal infrared imager, insulating box, high-Speed Data-Acquisition Module, the host computer and core
Control panel serial ports connects, and the core control panel is sequentially connected high speed current switching module, size constant current source module and insulating box,
The thermal infrared imager connects host computer, and the high speed current switching module, size constant current source module, thermal infrared imager connect respectively
The device under test in insulating box is connect, the device under test connects host computer by high-Speed Data-Acquisition Module.
The insulating box is dry type insulating box, control accuracy >=0.5 DEG C.
Current ripples coefficient≤1% of the size constant current source module.
A method of for accurately testing semiconductor device temperature distribution, using above-mentioned device, include the following steps：
A. device under test is positioned in insulating box, and uniformly smears Heat Conduction Material between device under test and insulating box；
B. the input test current value in host computer sends core control panel driving size constant current source module to, is to be measured
Device provides test electric current；
C. initial temperature value and stepping temperature value are inputted in host computer, it is to wait for send core control panel driving insulating box to
It surveys device and varying environment temperature is provided, the voltage value under high-Speed Data-Acquisition Module acquisition corresponding temperature is simultaneously uploaded to host computer；
D. the voltage value at varying environment temperature and corresponding temperature is carried out linear fit and obtains k-factor by host computer；
E. heated current value, test current value, heating time and testing time are inputted in host computer, send core control to
Making sheet driving size constant current source module provides heated current for device under test, after the time to be heated, high speed current switching mould
Heated current is switched to test electric current, the voltage value under high speed acquisition module collecting test electric current, while infrared heat by block rapidly
As instrument records corresponding temperature changes in distribution；
F. voltage change is sent to host computer by high speed acquisition module, and voltage variety and k-factor are divided by by host computer
To cooling curve；
G. the data in the cooling curve leading portion short time are fitted using approximating method in host computer, after fitting
The cooling curve of more accurate and complete reflection device under test temperature is smoothly obtained after data and back segment Data Integration again；
H. the temperature profile of the temperature of accurate cooling curve and thermal infrared imager record is corrected to obtain accurate by host computer
Temperature profile.
The step c high speeds data acquisition module sample rate >=1M/s.
The μ s of switching time of the step e high speeds current switching module≤1.
Approximating method in the step g includes square root approximating method and exponentially fitted method, the smoothing method
Including Fourier expansion is smooth and regularization is smooth；Wherein exponentially fitted method is existing quasi- for noisy cooling curve signal
Cooperation with also there is a smoothing effect, therefore exponentially fitted method be will be fitted and it is smooth merge into a step, and remaining fitting side
Method and smoothing method are two steps；The fitting of actual measurement cooling curve and the randomness that can smoothly effectively improve test data are missed
Difference.
The present invention compared with prior art, has following obvious prominent substantive distinguishing features and marked improvement：
The present invention provides corresponding test setting and test environment by design embedded control system for device under test, can
To obtain the exact value of device temperature, Infrared Thermogram is corrected with the exact value, to obtain the essence of accurate Infrared Thermogram
True Temperature Distribution.The present invention has the characteristics that precision is high, error is small, stability is good, and device and method can be right through the invention
Semiconductor devices carries out precise temperature profile test.
Description of the drawings
Fig. 1 is the flow chart of method of the present invention for accurately testing semiconductor device temperature distribution.
Fig. 2 is the structural schematic diagram of device of the present invention for accurately testing semiconductor device temperature distribution.
Specific implementation mode
Below in conjunction with the accompanying drawings, to the preferred embodiment of the present invention, details are as follows：
As shown in Fig. 2, a kind of device for accurately testing semiconductor device temperature distribution, including host computer 1, core control
Making sheet 2, high speed current switching module 3, size constant current source module 4, thermal infrared imager 5, insulating box 6, high-Speed Data-Acquisition Module
7, the host computer 1 is connect with 2 serial ports of core control panel, the core control panel 2 be sequentially connected high speed current switching module 3,
Size constant current source module 4 and insulating box 6, the thermal infrared imager 5 connect host computer 1, the high speed current switching module 3, big
Small constant current source module 4, thermal infrared imager 5 are separately connected the device under test in insulating box 6, and the device under test passes through high-speed data
Acquisition module 7 connects host computer 1.
The insulating box 6 is dry type insulating box, control accuracy >=0.5 DEG C.
Current ripples coefficient≤1% of the size constant current source module 4.
As shown in Figure 1, a kind of method for accurately testing semiconductor device temperature distribution, using above-mentioned device, packet
Include following steps：
A. device under test is positioned in insulating box 6, and heat conduction material is uniformly smeared between device under test and insulating box 6
Material；
B. the input test current value in host computer 1 sends core control panel 2 to and drives size constant current source module 4, to wait for
It surveys device and test electric current is provided；
C. initial temperature value and stepping temperature value are inputted in host computer 1, are sent core control panel 2 to and are driven insulating box 6
Varying environment temperature is provided for device under test, high-Speed Data-Acquisition Module 7 acquires the voltage value under corresponding temperature and is uploaded to
Position machine 1；
D. the voltage value at varying environment temperature and corresponding temperature is carried out linear fit and obtains k-factor by host computer 1；
E. heated current value, test current value, heating time and testing time are inputted in host computer 1, send core to
Control panel 2 drives size constant current source module 4 to provide heated current for device under test, and after the time to be heated, high speed electric current is cut
Heated current is switched to test electric current by mold changing block 3 rapidly, the voltage value under 7 collecting test electric current of high speed acquisition module, simultaneously
Thermal infrared imager 5 records corresponding temperature changes in distribution；
F. voltage change is sent to host computer 1 by high speed acquisition module 7, and voltage variety and k-factor are divided by by host computer 1
Obtain cooling curve；
G. the data in the cooling curve leading portion short time are fitted using approximating method in host computer 1, after fitting
Data and back segment Data Integration after smoothly obtained the cooling curve of more accurate and complete reflection device under test temperature again；
H. host computer 1 corrects the temperature profile that the temperature of accurate cooling curve and thermal infrared imager 5 record to obtain essence
True temperature profile.
7 sample rates of the step c high speed data acquisition modules >=1M/s.
The μ s of switching time of the step e high speed current switchings module 3≤1.
Approximating method in the step g includes square root approximating method and exponentially fitted method, the smoothing method
Including Fourier expansion is smooth and regularization is smooth；Wherein exponentially fitted method is existing quasi- for noisy cooling curve signal
Cooperation with also there is a smoothing effect, therefore exponentially fitted method be will be fitted and it is smooth merge into a step, and remaining fitting side
Method and smoothing method are two steps；The fitting of actual measurement cooling curve and the randomness that can smoothly effectively improve test data are missed
Difference.
The principle of the present invention is as follows：
The present embodiment device during the test, utilizes good line between semiconductor devices pn-junction forward voltage drop and junction temperature
Sexual intercourse provides adjustable thermostatic environment for device under test and accurately tests electric current, and test electric current is to make device under test forward conduction
But the electric current of self-heating, record environment temperature and corresponding forward voltage drop linear fit not can be obtained the K systems under the test electric current
Number；Then device under test is heated to stable state under heated current, switched at high speed to test electric current, due to the expansion of heat
It dissipates, transient state uphill process is presented in the forward voltage drop of device under test, quickly to this process sample and be converted to k-factor
The cooling curve of device under test, which accurately reflects the temperature of device under test, while thermal infrared imager shoots this
The temperature profile of one process.The temperature profile that the accurate temperature obtained with electricity method of testing corrects thermal infrared imager can obtain
To accurate temperature profile.
Claims (6)
1. a kind of method for accurately testing semiconductor device temperature distribution, using for accurately testing semiconductor device temperature
The device of distribution realizes, which includes that host computer (1), core control panel (2), high speed current switching module (3), size are permanent
Flow source module (4), thermal infrared imager (5), insulating box (6), high-Speed Data-Acquisition Module (7), the host computer (1) and core control
Making sheet (2) serial ports connects, and the core control panel (2) is sequentially connected high speed current switching module (3), size constant current source module
(4) and insulating box (6), thermal infrared imager (5) the connection host computer (1), the high speed current switching module (3), size are permanent
Stream source module (4), thermal infrared imager (5) are separately connected the device under test in insulating box (6), and the device under test passes through high speed number
According to acquisition module (7) connection host computer (1), it is characterised in that this method the specific steps are：
A. device under test is positioned in insulating box (6), and heat conduction material is uniformly smeared between device under test and insulating box (6)
Material；
B. the input test current value in host computer (1) sends core control panel (2) driving size constant current source module (4) to, is
Device under test provides test electric current；
C. input initial temperature value and stepping temperature value in host computer (1) send core control panel (2) driving insulating box to
(6) varying environment temperature is provided for device under test, high-Speed Data-Acquisition Module (7) acquires the voltage value under corresponding temperature and upload
To host computer (1)；
D. the voltage value at varying environment temperature and corresponding temperature is carried out linear fit and obtains k-factor by host computer (1)；
E. input heated current value, test current value, heating time and testing time in host computer (1), core control is sent to
Making sheet (2) driving size constant current source module (4) provides heated current for device under test, after the time to be heated, high speed electric current
Heated current is switched to test electric current, the voltage under high speed acquisition module (7) collecting test electric current by handover module (3) rapidly
Value, while thermal infrared imager (5) records corresponding temperature changes in distribution；
F. voltage change is sent to host computer (1) by high speed acquisition module (7), and host computer (1) is by voltage variety and k-factor phase
Except obtaining cooling curve；
G. the data in the cooling curve leading portion short time are fitted using approximating method in host computer (1), after fitting
It is smoothed to obtain the cooling curve of more accurate and complete reflection device under test temperature after data and back segment Data Integration again；
H. host computer (1) corrects to obtain using the temperature profile that the temperature of accurate cooling curve records thermal infrared imager (5)
Accurate temperature profile.
2. the method according to claim 1 for accurately testing semiconductor device temperature distribution, it is characterised in that：It is described
Insulating box (6) is dry type insulating box, control accuracy >=0.5 DEG C.
3. the method according to claim 1 for accurately testing semiconductor device temperature distribution, it is characterised in that：It is described
Current ripples coefficient≤1% of size constant current source module (4).
4. the method according to claim 1 for accurately testing semiconductor device temperature distribution, it is characterised in that：It is described
Step c high speeds data acquisition module (7) sample rate >=1M/s.
5. the method according to claim 1 for accurately testing semiconductor device temperature distribution, it is characterised in that：It is described
The μ s of switching time of step e high speed current switching modules (3)≤1.
6. the method according to claim 1 for accurately testing semiconductor device temperature distribution, it is characterised in that：It is described
Approximating method in step g includes square root approximating method and exponentially fitted method, method used by the smoothing processing
Including Fourier expansion is smooth and regularization is smooth；Wherein exponentially fitted method is existing quasi- for noisy cooling curve signal
Cooperation with also there is a smoothing effect, therefore exponentially fitted method be will be fitted and it is smooth merge into a step, and remaining fitting side
Method and smoothing method are two steps；The fitting of actual measurement cooling curve and the randomness that can smoothly effectively improve test data are missed
Difference.
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| CN105004427B true CN105004427B (en) | 2018-08-17 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110907786B (en) * | 2018-09-17 | 2022-03-22 | 国网浙江省电力公司 | Method for measuring electrothermal coupling characteristic of thyristor device |
| CN109270381B (en) * | 2018-10-30 | 2020-12-18 | 杭州高坤电子科技有限公司 | System for controlling and measuring junction temperature of four independent electronic loads and junction temperature measuring method thereof |
| CN114061756A (en) * | 2020-07-29 | 2022-02-18 | 山东炎一智能科技有限公司 | Infrared thermometer |
| CN113777474B (en) * | 2021-11-10 | 2022-03-15 | 北京京瀚禹电子工程技术有限公司 | Test method and system for temperature-resistant aging test of integrated circuit |
| CN114859216B (en) * | 2022-07-07 | 2022-09-09 | 河北中电科航检测技术服务有限公司 | Intelligent working device for circuit board detection |
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| CN102096035A (en) * | 2010-11-22 | 2011-06-15 | 金天 | Thermal cycling load test system for diode |
| CN103344902A (en) * | 2013-07-10 | 2013-10-09 | 上海大学 | LED transient thermal resistance measuring system |
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| CN101266280A (en) * | 2008-05-13 | 2008-09-17 | 上海大学 | High power light-emitting diode heat resistance and junction temperature test system |
| CN201555900U (en) * | 2009-11-02 | 2010-08-18 | 绍兴旭昌科技企业有限公司 | Device for testing steady state thermal resistance and junction temperature of micro-single-phase full-wave bridge rectifier |
| CN102096035A (en) * | 2010-11-22 | 2011-06-15 | 金天 | Thermal cycling load test system for diode |
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