CN201555900U - Device for testing steady state thermal resistance and junction temperature of micro-single-phase full-wave bridge rectifier - Google Patents

Device for testing steady state thermal resistance and junction temperature of micro-single-phase full-wave bridge rectifier Download PDF

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Publication number
CN201555900U
CN201555900U CN2009201986188U CN200920198618U CN201555900U CN 201555900 U CN201555900 U CN 201555900U CN 2009201986188 U CN2009201986188 U CN 2009201986188U CN 200920198618 U CN200920198618 U CN 200920198618U CN 201555900 U CN201555900 U CN 201555900U
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China
Prior art keywords
bridge rectifier
heating
temperature
junction temperature
steady state
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Expired - Lifetime
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CN2009201986188U
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Chinese (zh)
Inventor
保爱林
邓爱民
傅剑锋
管国栋
张文成
侯文波
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ZHEJIANG MINGDE MICROELECTRONIC CO., LTD.
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SHAOXING RISING-SUN TECHNOLOGY Co Ltd
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Priority to CN2009201986188U priority Critical patent/CN201555900U/en
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Abstract

The utility model discloses a device for testing steady state thermal resistance and junction temperature of a micro-single-phase full-wave bridge rectifier, which comprises a material installation plate, a constant temperature system, a heating system and a testing system, and is characterized in that the material installation plate is arranged in the constant temperature system and connected with the heating system and the testing system through leads; the material installation plate is provided with a plurality of terminals; the testing system is provided with a plurality of data acquisition interfaces and a heating compensation module; the constant temperature system comprises a heating module, a temperature setting and displaying module and a time control module; and the heating system comprises a high-precision current regulation button, a data acquisition port and a switch. The device has the advantages and functions of having simple structure, low cost, convenient operation, simple and convenient test and accurate data, being capable of realizing accurate testing of thermal characteristic parameters such as thermal resistance, junction temperature, thermal power dissipation and the like, and has broad application prospect.

Description

Test the device of miniature single-phases full bridge rectifier spare steady state heat resistance and junction temperature
Technical field
The utility model relates to the device of miniature single-phases full bridge rectifier spare steady state heat resistance of test and junction temperature.
Background technology
The mode that realizes the AC-to DC conversion in electric ballast replaces four commutation diodes to form rectification circuit with miniature bridge rectification device gradually, so the life-span of miniature bridge rectification device is directly connected to the serviceable life of electricity-saving lamp, and when miniature bridge rectifier is worked, the power consumption of chip itself raises the temperature of PN junction, can influence the serviceable life of bridge rectifier when temperature is too high, so the specified accurately of junction temperature, forward current seemed particularly important.The accurate test that everything all depends on junction temperature, thermal resistance comprises the on-line testing in making.
Measuring method to semiconductor devices junction temperature and thermal resistance has thermocouple thermometry, infrared thermometer thermometry, thermal infrared imager method, electric method etc. at present.With thermocouple thermometry, infrared thermometer method of testing can only contact devices outside surface or the temperature that outside lead is assessed device inside chip indirectly, because temperature is subjected to condition effect such as external environment, installation bigger, so the error of these two kinds of method reflection device actual conditions is bigger; Though the thermal infrared imager method can accurately reflect the situation of device, but must test with the thermal infrared imager of special use, and the operative skill that need have the professional to possess specialty is operated, and equipment cost, human cost etc. are all bigger, are unsuitable for promotion and application widely.
Summary of the invention
The utility model purpose is to provide a kind of device of miniature single-phases full bridge rectifier spare steady state heat resistance and junction temperature of simply fast and accurately testing.
For achieving the above object, the technical solution of the utility model is:
Test the device of miniature single-phases full bridge rectifier spare steady state heat resistance and junction temperature, comprise material installing plate, constant temperature system, heating system and test macro, it is characterized in that the material installing plate places constant temperature system, link to each other with heating system, test macro by lead simultaneously; The a plurality of binding posts of this material installing plate, test macro has a plurality of data acquisition interfaces and heating compensating module, constant temperature system comprises that heating module, temperature are provided with display module and time control module, and heating system comprises current with high accuracy adjusting button, data acquisition port and switch.
Further, the binding post in the material installing plate connects the output arm that miniature single-phase half-wave bridge rectifier part is set, and one of them anodal output arm is connected by binding post.
Further, test macro links to each other with the computer data interface with the heating system data acquisition interface by its data acquisition interface.
Further, the switch in the heating system is connected setting with test macro.
According to above setting, the temperature controlling range of constant temperature system is 25-200 ℃; Heating system can provide accurate constant output electric current; Test macro can provide the measurement electric current, and can provide the heating current of compensation in short-term, test macro has data acquisition function simultaneously, single channel or multichannel data directly can be imported computer by software platform, at last data analysis and the junction temperature and the thermal resistance that calculate resulting devices be carried out in logging data.
The utlity model has simple in structure, cost is low, easy to operate, test is easy, data are accurate; Test when not only can realize the inner single chip of miniature bridge rectification device or a plurality of chip, and the single or multiple that can realize single or multiple miniature bridge rectification devices is tested simultaneously, can realize simultaneously the advantage and the functions such as accurate test of thermal characteristic parameters such as thermal resistance, junction temperature, thermal power dissipation, have broad application prospects and the market advantage.
Description of drawings
Fig. 1 is the structural framing figure of the device of miniature single-phases full bridge rectifier spare steady state heat resistance of the utility model and junction temperature;
Fig. 2 is several connected modes that material installing plate circuit connects in the utility model.
Embodiment
The utility model is described in further detail below in conjunction with drawings and Examples.
With reference to the accompanying drawings 1, present embodiment comprises material installing plate 3, constant temperature system 4, heating system 5 and test macro 6, and wherein material installing plate 3 places constant temperature system 4, links to each other with heating system 5, test macro 6 by lead simultaneously; More than 3 binding post of described material installing plate, test macro 6 has a plurality of data acquisition interfaces and heating compensating module, constant temperature system 4 comprises that heating module, temperature are provided with display module and time control module, and heating system 5 comprises current with high accuracy adjusting button, data acquisition port and switch.
Binding post in the material installing plate 3 connects the output arm that miniature single-phase half-wave bridge rectifier part is set, and one of them anodal output arm is connected by binding post; Test macro 6 links to each other with the computer data interface with heating system 5 data acquisition interfaces by its data acquisition interface; Switch in the heating system 5 is connected setting with test macro 6.
The utility model is as follows in test operating procedure:
The first step is connected single or multiple single-phases full bridge rectifier spares on the material installing plate 3, places constant temperature system 4 then, and opens electric power system.
Second step transferred to 4mA to the positive test electric current I m of test macro 6, changed the temperature of constant temperature system 4, set gradually temperature, from 25 ℃, 50 ℃ until 150 ℃, corresponding forward temperature-sensitive voltage V under the test varying environment temperature T F, according to the linear regression function formula:
Tin=Kn×V Fin+Bn
Tjn=Kn×V Fjn+Bn
By separating above-mentioned two binary once linear regression function equations, can find the solution the slope K n that draws linear regression and the intercept Bn of linear regression function;
Wherein, the environment temperature T when Tin, Tjn represent the i time, the j time of n device test, V FIn, V FJn is under the positive test electric current I m=4mA of correspondence, the i time, the j time forward temperature-sensitive voltage V of n device F, Kn represents the heat-sensitive coefficients of n device.
The 3rd step, the forward temperature-sensitive voltage V of n the device that draw FLinear regression function T n=Kn * V of n and device junction temperature (this moment, junction temperature equaled environment temperature) Tn FThe function curve of n+Bn (Fig. 3);
The fundamental purpose of above step is to try to achieve: the intercept Bn of the slope K n of linear regression function and linear regression function; Follow-up the 4th step beginning mainly is a heating current ability of determining that device can bear.
The 4th step, constant temperature system 4 is reduced to room temperature (25 ℃), lead to heating current I with heating system 5 to device then H, heating current I HBe initially set to 100mA, treat thermal equilibrium after, gather heating current I with test macro 6 HThe forward voltage V at corresponding device two ends FHN, then with current switching to Im=4mA, and the forward temperature-sensitive voltage V of device correspondence under the test I m=4mA FN, wherein V FHN is a n device heats electric current I HCorresponding forward voltage, V FN is the forward temperature-sensitive voltage of n device under measuring current Im=4mA;
The 5th step is respectively to the logical I of device H=200mA, 300mA ..., the heating current of 1000mA, repeated test device heats electric current I HCorresponding forward voltage V FH, and the forward temperature-sensitive voltage V of the device correspondence under the Im=4mA F
The 6th step is by the junction temperature T of linear regression function formula calculating device JN:
T Jn=Kn×V Fn+Bn
Wherein, T jN is the junction temperature of n device, V FN is the corresponding forward temperature-sensitive voltage V under measuring current Im=4mA of n device F
The 7th step, the thermal resistance Rjan of the computing formula calculating device by thermal resistance:
Rjan = Δ T J n P H n = T J n - T A I H × V H n
Wherein, Rjan is the thermal resistance of the knot of n device to environment, Δ T JN is the temperature variation of n device, P HN is that n device is at heating current I HThe power of following work, V HN is that n device is at heating current I HThe forward voltage at the device two ends of following correspondence.
The utlity model has simple in structure, cost is low; Easy to operate, test is easy, data are accurate, can realize advantage and the functions such as accurate test of the thermal characteristic parameters such as thermal resistance, junction temperature, thermal power dissipation, have broad application prospects.

Claims (4)

1. test the device of miniature single-phases full bridge rectifier spare steady state heat resistance and junction temperature, comprise material installing plate, constant temperature system, heating system and test macro, it is characterized in that described material installing plate places constant temperature system, links to each other with heating system, test macro by lead simultaneously; The a plurality of binding posts of described material installing plate, described test macro has a plurality of data acquisition interfaces and heating compensating module, described constant temperature system comprises that heating module, temperature are provided with display module and time control module, described heating system comprises current with high accuracy adjusting button, data acquisition port and switch.
2. according to the device of miniature single-phases full bridge rectifier spare steady state heat resistance of the described test of claim 1 and junction temperature, it is characterized in that the binding post in the described material installing plate connects the output arm that miniature single-phase half-wave bridge rectifier part is set, one of them anodal output arm is connected by binding post.
3. according to the device of miniature single-phases full bridge rectifier spare steady state heat resistance of the described test of claim 1 and junction temperature, it is characterized in that described test macro links to each other with the computer data interface with the heating system data acquisition interface by its data acquisition interface.
4. according to the device of miniature single-phases full bridge rectifier spare steady state heat resistance of the described test of claim 1 and junction temperature, it is characterized in that the switch in the described heating system is connected setting with test macro.
CN2009201986188U 2009-11-02 2009-11-02 Device for testing steady state thermal resistance and junction temperature of micro-single-phase full-wave bridge rectifier Expired - Lifetime CN201555900U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105004427A (en) * 2015-07-08 2015-10-28 上海大学 Device and method for precisely testing temperature distribution of semiconductor device
CN109164370A (en) * 2018-09-06 2019-01-08 上海交通大学 The thermal impedance measuring system and method for power semiconductor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105004427A (en) * 2015-07-08 2015-10-28 上海大学 Device and method for precisely testing temperature distribution of semiconductor device
CN105004427B (en) * 2015-07-08 2018-08-17 上海大学 Device and method for accurately testing semiconductor device temperature distribution
CN109164370A (en) * 2018-09-06 2019-01-08 上海交通大学 The thermal impedance measuring system and method for power semiconductor
CN109164370B (en) * 2018-09-06 2020-11-03 上海交通大学 Thermal impedance measurement system and method for power semiconductor device

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GR01 Patent grant
C56 Change in the name or address of the patentee

Owner name: ZHEJIANG MINGDE MICROELECTRONICS CO., LTD.

Free format text: FORMER NAME: SHAOXING RISING-SUN TECHNOLOGY CO., LTD.

CP03 Change of name, title or address

Address after: 312000 Longshan Software Park, Shaoxing Economic Development Zone, Shaoxing, Zhejiang

Patentee after: ZHEJIANG MINGDE MICROELECTRONIC CO., LTD.

Address before: 312000 Dongshan science and Technology Park, Dongshan Road, Zhejiang, Shaoxing

Patentee before: Shaoxing Rising-sun Technology Co., Ltd.

CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20100818