CN109164370B - Thermal impedance measurement system and method for power semiconductor device - Google Patents
Thermal impedance measurement system and method for power semiconductor device Download PDFInfo
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- CN109164370B CN109164370B CN201811039276.5A CN201811039276A CN109164370B CN 109164370 B CN109164370 B CN 109164370B CN 201811039276 A CN201811039276 A CN 201811039276A CN 109164370 B CN109164370 B CN 109164370B
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Abstract
The invention provides a thermal impedance measuring system and method of a power semiconductor device, wherein the system comprises: the device comprises a direct current power supply module, a tested module, a driving module, a measuring module and a master control module; wherein: the direct current power supply module is used for supplying electric energy to the module to be tested; the tested module comprises at least one tested unit; the driving module is used for amplifying the power of the switch state signal output by the master control module so as to drive a power device in the tested unit; the measuring module is used for detecting the electrical state and the temperature state of the module to be measured; and the master control module is used for analyzing and processing the result measured by the measuring module to obtain the thermal impedance characteristic of the power semiconductor device in the measured unit. The invention can realize more accurate thermal impedance characteristic measurement of a plurality of power semiconductor devices, and the cost of the test system is greatly reduced.
Description
Technical Field
The invention relates to the technical field of power electronics, in particular to a thermal impedance measuring system and method of a power semiconductor device.
Background
Power semiconductor devices are important components in power electronic converters, and abnormal operation of power semiconductor devices is a major cause of converter failure. In order to improve the reliability and economy of the converter, the thermal behavior and the operating efficiency of the power semiconductor device need to be accurately predicted and evaluated, and before that, the thermal impedance characteristics of the power semiconductor device need to be accurately obtained.
According to the definition formula of the thermal impedance, to obtain the thermal impedance characteristic of the power semiconductor device, the dynamic temperature change of the device to be tested and the power loss of the device need to be obtained. In the prior art, a current source with constant magnitude and direction is generally adopted to heat a continuously conducted power semiconductor device, after a thermal stable state is achieved, an additional switch is utilized to cut off heating current, and the temperature change of multiple points in the temperature reduction process of a tested device is recorded. Since the power loss during the heating of the device under test only includes conduction loss, it can be obtained by multiplying the conduction voltage on the device by the heating current before it is switched off.
However, in practical applications, the power semiconductor device is usually in a high-speed switching state, and its power loss not only has conduction loss, but also includes large switching loss, and the switching loss is a main heat source of the device. When the conventional thermal impedance measurement method is adopted, in order to achieve a temperature range close to the actual operation, the device to be measured needs to be operated in a linear amplification state, or a heating current much larger than the actual operating current of the device needs to be applied. The method for testing the thermal impedance of the traditional power semiconductor device has the obvious problems that the cost of a testing system is high, the change speed of the heating current is low, the direction of the heating current is single, the device to be tested is fixed, the working state of the device is not accordant with the practical application and the like.
Disclosure of Invention
In view of the defects in the prior art, the present invention provides a system and a method for measuring thermal impedance of a power semiconductor device.
In a first aspect, an embodiment of the present invention provides a thermal impedance measurement system for a power semiconductor device, including: the device comprises a direct current power supply module, a tested module, a driving module, a measuring module and a master control module; wherein:
the direct current power supply module is used for providing electric energy for the tested module according to the given reference voltage provided by the master control module;
the module under test comprises: the device comprises at least one tested unit, a power semiconductor device and a control unit, wherein the tested unit is used for simulating the working state of the power semiconductor device; the unit under test includes: the power semiconductor device comprises a measuring circuit consisting of power semiconductor devices and a load module corresponding to the measuring circuit;
the driving module is used for carrying out power amplification on the switching state signal output by the master control module to obtain a corresponding driving signal and controlling the switching state of a power semiconductor device in the tested unit through the driving signal;
the measuring module is used for detecting the electrical states and temperature states of the power semiconductor devices in the measuring circuit and the load modules corresponding to the measuring circuit according to the measuring signals provided by the master control module;
and the master control module is used for providing a given reference voltage for the direct current power supply module and analyzing and processing the result measured by the measuring module so as to obtain the thermal impedance characteristic of the power semiconductor device in the unit to be measured.
Optionally, the measurement circuit comprises: a full bridge circuit composed of power semiconductor devices, or an H-bridge circuit.
Optionally, the measurement circuit further includes: a heat sink for dissipating heat generated by the power semiconductor device.
Optionally, the measurement module comprises: the temperature measuring submodule, the voltage measuring submodule and the current measuring submodule are connected; wherein:
the temperature measurement submodule is configured to obtain a temperature parameter of the measurement circuit, where the temperature parameter includes: any one or more of junction temperature of the power semiconductor device, shell temperature of the power semiconductor device, temperature of a radiator and ambient temperature;
the voltage measurement submodule is used for acquiring voltage values of a power semiconductor device in a measurement circuit and a corresponding load module in the measurement circuit;
the current measuring submodule is used for obtaining current values of the power semiconductor device in the measuring circuit and the corresponding load module in the measuring circuit.
Optionally, the temperature measurement sub-module adopts a temperature sensor or a measurement sensor of a temperature-sensitive electrical parameter;
the load module corresponding to the measuring circuit comprises any one of the following forms:
a pure inductive circuit;
the mixed type electrical impedance network consists of an inductor, a capacitor, a resistor and a transformer.
Optionally, the power semiconductor device comprises any one of the following types:
semiconductor chips based on silicon, silicon carbide, gallium nitride;
the power semiconductor device is manufactured by adopting module, compression joint and discrete packaging technologies.
In a second aspect, an embodiment of the present invention provides a thermal impedance measuring method for a power semiconductor device, which is applied to a thermal impedance measuring system for a power semiconductor device according to any one of the first aspect, and the method includes:
controlling the switching state of a power semiconductor device in a unit under test according to a driving signal so as to form a heating current in the unit under test;
after the power semiconductor device reaches a thermal stable state, controlling the switching state of the power semiconductor device in the tested unit through the driving signal, and changing the heating current in the tested unit;
acquiring the power loss of a power semiconductor device in the unit to be tested, and measuring and recording the temperature change value of the power semiconductor device;
and analyzing to obtain the thermal impedance parameter of the power semiconductor device according to the power loss and the temperature change value of the power semiconductor device.
Optionally, the form of the heating current comprises any one of:
a unidirectional pulse current flowing through the power semiconductor device;
a continuous direct current, or an alternating current, flowing through the power semiconductor device.
Optionally, the power loss of the power semiconductor device includes: switching losses and conduction losses.
Compared with the prior art, the invention has the following beneficial effects:
1. the thermal impedance measuring system of the power semiconductor device can freely and quickly adjust the magnitude and the direction of the heating current of the tested device, thereby realizing the cyclic measurement of a single or a plurality of tested devices and increasing the reliability and the universality of measured data.
2. According to the thermal impedance measuring system of the power semiconductor device, the test circuit structure is similar to the circuit topological structure commonly used by the power semiconductor device, and the tested device works in the on-off state in practical application, so that the obtained test data is closer to the characteristic of the tested device under the actual operation working condition.
3. The thermal impedance measuring method of the power semiconductor device considers the switching loss of the power semiconductor device under the actual operation condition, the heating current required for reaching the same test temperature is smaller, the heating current is freely adjusted depending on the working state of the device to be tested, so that additional switching is avoided, a power supply system can adopt a voltage source with smaller power, and the cost of the test system is greatly reduced.
4. The thermal impedance measuring method of the power semiconductor device can realize the rapid reduction of the heating current, so that the loss power borne by the device to be measured is closer to an ideal step signal, and the obtained thermal impedance data is more accurate.
Drawings
Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:
FIG. 1 is a schematic structural diagram of a thermal impedance measurement system for a power semiconductor device according to the present invention;
FIG. 2 is a schematic structural diagram of a module under test according to the present invention;
FIG. 3 is a schematic structural diagram of a first embodiment of a system for measuring thermal impedance of a power semiconductor device according to the present invention;
FIG. 4 is a flow chart of a method for measuring thermal impedance of a power semiconductor device according to the present invention;
FIG. 5 is a schematic diagram of a load current waveform according to a first embodiment of the thermal impedance measurement method provided by the present invention;
fig. 6 is a waveform diagram illustrating a set of test power semiconductor devices under test according to an embodiment of the thermal impedance measuring method of the present invention.
In the figure:
1-a direct current power supply module;
2-a module under test;
3-a drive module;
4-a master control module;
5-measuring module.
Detailed Description
The present invention will be described in detail with reference to specific examples. The following examples will assist those skilled in the art in further understanding the invention, but are not intended to limit the invention in any way. It should be noted that it would be obvious to those skilled in the art that various changes and modifications can be made without departing from the spirit of the invention. All falling within the scope of the present invention.
Fig. 1 is a schematic structural diagram of a system for measuring thermal impedance of a power semiconductor device according to the present invention, and as shown in fig. 1, the system may include: the device comprises a direct current power supply module 1, a tested module 2 (comprising n tested units and n tested radiators), a driving module 3, a measuring module 5 and a master control module 4. The number of the dc output port groups of the dc power supply module 1 is the same as the number of the units to be tested (as shown in fig. 1, n is an integer greater than or equal to 1, and n is an integer greater than or equal to 1), and the output ports of the dc power supply module 1 are correspondingly connected to the dc buses of the units to be tested. The direct current power supply module 1 can change the direct current voltage of the output end according to the direct current voltage reference given value of the master control module 4. And the driving module 3 receives the switch state signal output by the master control module 4, amplifies the power of the switch state signal and drives the power semiconductor device in the tested unit. The measuring module 5 is used for detecting the electrical and temperature states of the power semiconductor device and the load module in the unit to be tested; the master control module 4 is used for judging and calculating according to the electric and temperature information detected by the measuring module 5 and providing a switch state signal of the driving module 3; or providing a reference given value of the direct current power supply module 1; or to provide a measurement signal of the measurement module 5.
Fig. 2 is a schematic structural diagram of a module under test according to the present invention, and the module under test includes a unit under test and an optional heat sink under test, as shown in fig. 2. The tested unit comprises an H-bridge or full-bridge circuit consisting of two bridge ARMs (marked as ARM1 and ARM2 in figure 2) and a corresponding load module 7; the bridge arms are half-bridge structures in any topological form formed by power semiconductor devices, the number of the load modules is the same as that of the tested units, and two ports of each load module are respectively connected with the middle points of the two bridge arms in each tested unit. Each bridge arm in fig. 2 includes two tested power semiconductor device modules (identified as DUT1_ H, DUT1_ L and DUT2_ H, DUT2_ L in fig. 2) connected in series in the same direction and a tested heat sink (identified as HS1_ H, HS1_ L and HS2_ H, HS2_ L in fig. 2) corresponding to the tested power semiconductor devices, and the power semiconductor devices in the tested module 2 include: an Insulated Gate Bipolar Transistor (IGBT) and a Diode (Diode) connected in anti-parallel with the IGBT.
FIG. 3 is a schematic structural diagram of a first embodiment of a system for measuring thermal impedance of a power semiconductor device according to the present invention; comprises a tested unit, a driving module 3, a general control module 4 and a measuring module 5; the unit under test comprises an H-bridge test circuit and a pure inductive load module L, wherein the H-bridge test circuit comprises four power semiconductor device modules under test, DUT1_ H (comprising T1 and D1), DUT1_ L (comprising T2 and D2), DUT2_ H (comprising T3 and D3) and DUT2_ L (comprising T4 and D4); the measuring module 5 measures the electrical/temperature states of the power semiconductor device DUT1_ H, DUT1_ L, DUT2_ H, DUT2_ L, the inductive load L and the corresponding heat sink respectively through five probes S1, S2, S3, S4 and SL, wherein the probes comprise one or more of a voltage probe, a current probe and a temperature probe; the measuring module also measures the junction temperatures of the four modules of the power semiconductor devices under test through four junction temperature measuring modules ST1, ST2, ST3 and ST 4. The four junction temperature measuring modules use the conduction voltage drop of the power semiconductor device to be measured as temperature-sensitive parameters to estimate the junction temperature of the device.
Further, on the basis of the thermal impedance measuring platform of the power semiconductor device, the invention provides a corresponding thermal impedance measuring method of the power semiconductor device, and fig. 4 is a flow chart of the thermal impedance measuring method of the power semiconductor device provided by the invention; the cyclic test method for acquiring the thermal impedance of all power semiconductor devices in a tested unit under given heating current and heat dissipation conditions comprises the following steps:
s1: setting the device under test, and executing step S2;
s2: setting the magnitude and direction of the heating current according to the set device under test, taking the magnitude and direction as the current target value of the load module in the module under test, and executing step S3;
s3: generating a current in the load module by controlling the switches of the devices in the test unit, and executing step S4 when the current flowing through the device under test is a continuous current or a unidirectional pulse current with a fixed duty ratio when an electrical steady state is reached;
s4: recording the temperature of the tested device, if the tested device reaches the thermal stable state, executing the step S5, if the tested device does not reach the thermal stable state, returning to execute the step S3;
s5: performing step S6 by controlling switches of devices in the test cell to rapidly cut off the heating current;
s6: recording the temperature change of the tested device in the cooling process, and executing the step S7;
s7: comparing the temperature of the tested device with the ambient temperature, if the junction temperature of the tested device reaches the ambient temperature, executing the step S8, if the junction temperature of the tested device is still higher than the ambient temperature, returning to execute the step S3;
s8: if all the devices under test have completed the thermal impedance measurement, go to step S9, if there are still devices under test in the module under test that have not completed the thermal impedance measurement, go back to step S1;
s9: and (5) finishing the test.
Fig. 5 is a schematic view of a load current waveform of a first embodiment of the thermal impedance measurement method according to the present invention, which shows a sequence of cyclic thermal impedance measurement performed on four power semiconductor device modules (eight total devices under test) in fig. 3, where a current reference direction is from ARM1 to ARM2 in fig. 2. One thermal impedance measurement cycle (T identified in fig. 5) includes four heating processes (P1, P3, P5, P7 identified in fig. 5) and corresponding cooling processes (P2, P4, P6, P8 identified in fig. 5). Different load current directions can heat different devices under test, T1, D2, D3 and T4 can be heated when the load current is positive, and D1, T2, T3 and D4 can be heated when the load current is negative. The length of the temperature reduction process is determined according to the test condition and the test target, in this embodiment, the conduction voltage drop of the device is used to measure the junction temperature, in order to avoid the temperature rise caused by the short circuit of the measurement unit and the change of the load current in the temperature reduction process, the modules on the same bridge arm or the diagonal bridge arm cannot be simultaneously conducted to measure the temperature, that is, only the following two combined devices, DUT1_ H, DUT2_ H, DUT1_ L and DUT2_ L, can be simultaneously measured. Figure 6 shows the present inventionThe embodiment of the thermal impedance measurement method provided in the invention is a waveform diagram when testing a group of tested power semiconductor devices (labeled as P1 and P2 in fig. 5), including load current iLJunction temperature T of devicejTest current iMAnd a drive voltage waveform v of the power semiconductor deviceGE. Thermal impedance measurement is carried out on T1 and D3 at the same time in stages P1 and P2, and the device to be measured is heated in the stage P1 by controlling load current to be constant direct current with negligible ripple through fast switching of four power semiconductor devices in a measuring unit. After the device under test reaches thermal steady state, the load current is rapidly reduced to zero by changing the switch state, and the P2 phase is entered. In the stage P2, measuring currents are injected into T1 and D3 through junction temperature measuring modules ST1 and ST3 respectively, the tested device is kept to be conducted, the magnitude of the measuring currents is far smaller than that of heating currents, and the heat generated by the measuring currents is negligible.
It should be noted that, the steps in the method for testing the thermal impedance characteristic of the power semiconductor device provided by the present invention may be implemented by using corresponding modules, devices, units, and the like in the test platform of the loss characteristic of the power semiconductor device, and those skilled in the art may refer to the technical scheme of the system to implement the step flow of the method, that is, the embodiment in the system may be understood as a preferred example for implementing the method, and will not be described herein again.
The foregoing description of specific embodiments of the present invention has been presented. It is to be understood that the present invention is not limited to the specific embodiments described above, and that various changes or modifications may be made by one skilled in the art within the scope of the appended claims without departing from the spirit of the invention. The embodiments and features of the embodiments of the present application may be combined with each other arbitrarily without conflict.
Claims (6)
1. A thermal impedance measurement system for a power semiconductor device, comprising: the device comprises a direct current power supply module, a tested module, a driving module, a measuring module and a master control module; wherein:
the direct current power supply module is used for providing electric energy for the tested module according to the given reference voltage provided by the master control module;
the module under test comprises: the device comprises at least one tested unit, a power semiconductor device and a control unit, wherein the tested unit is used for simulating the working state of the power semiconductor device, so that the current flowing through the power semiconductor device is a unidirectional pulse current with a fixed duty ratio when the measuring system reaches a heating electric stable state; the unit under test includes: the power semiconductor device comprises a measuring circuit consisting of power semiconductor devices and a load module corresponding to the measuring circuit;
the driving module is used for carrying out power amplification on the switching state signal output by the master control module to obtain a corresponding driving signal and controlling the switching state of a power semiconductor device in the tested unit through the driving signal;
the measuring module is used for detecting the electrical states and temperature states of the power semiconductor devices in the measuring circuit and the load modules corresponding to the measuring circuit according to the measuring signals provided by the master control module;
the master control module is used for providing a given reference voltage for the direct current power supply module and analyzing and processing the result measured by the measuring module to obtain the thermal impedance characteristic of the power semiconductor device in the unit to be measured;
the measurement circuit further comprises: a heat sink for dissipating heat generated by the power semiconductor device;
the measurement module includes: the temperature measuring submodule, the voltage measuring submodule and the current measuring submodule are connected; wherein:
the temperature measurement submodule is configured to obtain a temperature parameter of the measurement circuit, where the temperature parameter includes: any one or more of junction temperature of the power semiconductor device, shell temperature of the power semiconductor device, temperature of a radiator and ambient temperature;
the voltage measurement submodule is used for acquiring voltage values of a power semiconductor device in a measurement circuit and a corresponding load module in the measurement circuit;
the current measuring submodule is used for obtaining current values of the power semiconductor device in the measuring circuit and the corresponding load module in the measuring circuit.
2. The system of claim 1, wherein the measurement circuit comprises: a full bridge circuit composed of power semiconductor devices, or an H-bridge circuit.
3. The system for measuring the thermal impedance of the power semiconductor device according to claim 1, wherein the temperature measuring submodule adopts a temperature sensor or a temperature-sensitive electrical parameter measuring sensor;
the corresponding load module in the measuring circuit comprises any one of the following forms:
a pure inductive circuit;
the mixed type electrical impedance network consists of an inductor, a capacitor, a resistor and a transformer.
4. Thermal impedance measurement system of a power semiconductor device according to any of claims 1-3, characterized in that the power semiconductor device comprises any of the following types:
semiconductor chips based on silicon, silicon carbide, gallium nitride;
the power semiconductor device is manufactured by adopting module, compression joint and discrete packaging technologies.
5. A thermal impedance measurement method of a power semiconductor device, which is applied to a thermal impedance measurement system of a power semiconductor device according to any one of claims 1 to 4, the method comprising:
controlling the switching state of a power semiconductor device in a unit under test according to a driving signal so as to form a heating current in the unit under test;
after the power semiconductor device reaches a thermal stable state, controlling the switching state of the power semiconductor device in the tested unit through the driving signal, and changing the heating current in the tested unit;
acquiring the power loss of a power semiconductor device in the unit to be tested, and measuring and recording the temperature change value of the power semiconductor device;
analyzing to obtain a thermal impedance parameter of the power semiconductor device according to the power loss and the temperature change value of the power semiconductor device;
the form of the heating current includes any one of:
a unidirectional pulse current flowing through the power semiconductor device;
a continuous direct current, or an alternating current, flowing through the power semiconductor device.
6. The method of claim 5, wherein the power loss of the power semiconductor device comprises: switching losses and conduction losses.
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| CN110118617A (en) * | 2019-05-30 | 2019-08-13 | 上海元城汽车技术有限公司 | The internal temperature of battery modules determines method, apparatus and intelligent terminal |
| CN111680464A (en) * | 2020-06-03 | 2020-09-18 | 上海元城汽车技术有限公司 | Thermal simulation model and thermal simulation method of H-bridge drive circuit |
| CN112327967B (en) * | 2020-10-19 | 2021-07-27 | 珠海格力电器股份有限公司 | Temperature control device and method of power device and electrical equipment |
| US12038469B2 (en) | 2021-02-26 | 2024-07-16 | Innoscience (Suzhou) Technology Co., Ltd. | System and method for measuring intermittent operating life of GaN-based device |
| CN113702794B (en) * | 2021-09-03 | 2022-07-15 | 上海交通大学 | Power semiconductor device health state evaluation method based on thermal impedance characteristic frequency |
| CN113759229B (en) * | 2021-09-13 | 2022-08-02 | 上海交通大学 | Power semiconductor switching loss measurement method and system based on temperature measurement |
| CN115148692B (en) * | 2022-05-12 | 2024-09-20 | 重庆涛科电气研究院有限公司 | Crimping type discrete SiC MOSFET device packaging structure |
| CN117434415B (en) * | 2023-12-20 | 2024-04-12 | 富芯微电子有限公司 | Semiconductor device thermal resistance measuring equipment |
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