CN109164370A - The thermal impedance measuring system and method for power semiconductor - Google Patents
The thermal impedance measuring system and method for power semiconductor Download PDFInfo
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- CN109164370A CN109164370A CN201811039276.5A CN201811039276A CN109164370A CN 109164370 A CN109164370 A CN 109164370A CN 201811039276 A CN201811039276 A CN 201811039276A CN 109164370 A CN109164370 A CN 109164370A
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- power semiconductor
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- temperature
- measurement
- thermal impedance
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
Abstract
The present invention provides the thermal impedance measuring system and method for a kind of power semiconductor, which includes: direct current supply module, tested module, drive module, measurement module and total control module；Wherein: direct current supply module, for providing electric energy to tested module；Tested module includes at least one unit under test；Drive module, the switch state signal for exporting total control module carries out power amplification, to drive the power device in unit under test；Measurement module, for detecting electric state, the state of temperature of the tested module；Total control module, the result for measuring to the measurement module are analyzed and processed, and obtain the thermal impedance characteristic of power semiconductor in the unit under test.The more accurate thermal impedance feature measurement of multiple power semiconductors can be achieved in the present invention, and cost of testing system substantially reduces.
Description
Technical field
The present invention relates to power electronics fields, and in particular, to the thermal impedance measuring system of power semiconductor
And method.
Background technique
Power semiconductor is element important in electronic power convertor, and power semiconductor is improper
Work is the major failure reason of current transformer.In order to improve the reliability and economy of current transformer, need to power semiconductor device
The thermal behavior of part and working efficiency carry out accurately prediction and assessment, and before this, it is necessary to it accurately obtains power and partly leads
The thermal impedance characteristic of body device.
According to the defined formula of thermal impedance, the thermal impedance characteristic of power semiconductor is obtained, needs to obtain tested device
The dynamic temperature of part changes and the power loss of device.Existing technology generallys use the current source in constant size and direction
The power semiconductor of constant conduction is heated, after reaching thermal steady state, cuts off heating electricity using extra switch
Stream, and record the temperature change of multiple spot in measured device temperature-fall period.Only due to the power loss in measured device heating process
Comprising conduction loss, can be obtained by conducting voltage on device and the heated current product before being cut off.
But high-speed switch state is generally in power semiconductor practical application, power loss is not only led
Logical loss, further includes biggish switching loss, and switching loss is the main heating source of device.When using traditional thermal impedance measurement side
When method, in order to reach with temperature range similar in actual motion, need to make measured device work in linear magnifying state, or apply
Much larger than the heated current of device real work electric current.This but also conventional power semiconductors device thermal impedance test method,
With cost of testing system height, heated current pace of change is slow, and heated current direction is single, and measured device is fixed, device work
State and practical application, which are not met, waits prominent questions.
Summary of the invention
For the defects in the prior art, the object of the present invention is to provide a kind of measurements of the thermal impedance of power semiconductor
System and method.
In a first aspect, the embodiment of the present invention provides a kind of thermal impedance measuring system of power semiconductor, comprising: direct current
Power supply module, tested module, drive module, measurement module and total control module；Wherein:
The direct current supply module, the given reference voltage for being provided according to the total control module are tested to described
Module provides electric energy；
The tested module includes: at least one unit under test, and the unit under test is used for simulated power semiconductor devices
Working condition；The unit under test includes: measuring circuit composed by power semiconductor and the measuring circuit pair
The load blocks answered；
The drive module, the switch state signal for exporting the total control module carry out power amplification, obtain
Corresponding driving signal, and control by the driving signal switch state of power semiconductor in the unit under test；
The measurement module, the measuring signal for being provided according to the total control module, is detected in the measuring circuit
Power semiconductor, the corresponding load blocks of the measuring circuit electric state and state of temperature；
The total control module gives reference voltage for providing to the direct current supply module, and to the measurement
The result that module measures is analyzed and processed, to obtain the thermal impedance characteristic of power semiconductor in the unit under test.
Optionally, the measuring circuit includes: the full-bridge circuit being made of power semiconductor or H-bridge circuit.
Optionally, in the measuring circuit further include: radiator, the radiator is for power semiconductor production of dissipating
Raw heat.
Optionally, the measurement module includes: temperature measurement submodule, voltage measurement submodule, current measurement submodule；
Wherein:
The temperature measures submodule, and for obtaining the temperature parameter of measuring circuit, the temperature parameter includes: power half
The junction temperature of conductor device, the skin temperature of power semiconductor, the temperature of radiator, any in environment temperature appoint more
A temperature value；
The voltage measurement submodule, for obtaining power semiconductor in measuring circuit, right in the measuring circuit
The voltage value for the load blocks answered；
The current measurement submodule, for obtaining power semiconductor in measuring circuit, right in the measuring circuit
The current value for the load blocks answered.
Optionally, the temperature measurement submodule uses the measurement sensor of temperature sensor or temperature sensitive electric parameter；
The corresponding load blocks of the measuring circuit include following any form:
Pure inductive circuit；
The mixed type electrical impedance network as composed by inductance, capacitor, resistance, transformer.
Optionally, the power semiconductor includes following any kind:
Based on silicon, silicon carbide, gallium nitride semiconductor chip；
Using module, the power semiconductor of crimping, the production of discrete encapsulation technology.
Second aspect, the embodiment of the present invention provide a kind of thermal impedance measurement method of power semiconductor, are applied to the
In a kind of thermal impedance measuring system of power semiconductor described in any one of one side, which comprises
The switch state that power semiconductor in unit under test is controlled according to driving signal, in the unit under test
Form heated current；
After the power semiconductor reaches thermal steady state, the tested list is controlled by the driving signal
The switch state of power semiconductor in member, changes the heated current in the unit under test；
The power loss of power semiconductor in the unit under test is obtained, and measures and records the power and partly lead
The temperature change value of body device；
According to the power loss and temperature change value of the power semiconductor, analysis obtains the power semiconductor
The thermal resistance parameters of device.
Optionally, the form of the heated current includes following any:
Flow through the unidirectional pulse electric current of power semiconductor；
Flow through the continuous direct current or alternating current of power semiconductor.
Optionally, the power loss of the power semiconductor includes: switching loss and conduction loss.
Compared with prior art, the present invention have it is following the utility model has the advantages that
1, the thermal impedance measuring system of power semiconductor provided by the invention can freely rapidly adjust tested device
Part heated current size and direction increase the credible of measurement data to realize the circulation measurement of single or multiple measured devices
Degree and versatility.
2, the thermal impedance measuring system of power semiconductor provided by the invention, test circuit structure and power therein
The common circuit topological structure of semiconductor devices is close, and measured device works in the switch state in practical application, thus gained
Characteristic of the test data arrived closer to measured device under actual operating mode.
3, the thermal impedance measurement method of power semiconductor provided by the invention, it is contemplated that power under actual operating state
The switching loss of semiconductor devices, heated current needed for reaching same test temperature is smaller, and heated current is by tested
The working condition of device carries out free adjusting, and so as to avoid extra switch, power supply system can use the voltage of smaller power
Source, to greatly reduce cost of testing system.
4, the thermal impedance measurement method of power semiconductor provided by the invention, may be implemented heated current it is rapid under
Drop, for the loss power for bearing measured device closer to ideal step signal, obtained thermal impedance data are more accurate.
Detailed description of the invention
Upon reading the detailed description of non-limiting embodiments with reference to the following drawings, other feature of the invention,
Objects and advantages will become more apparent upon:
Fig. 1 is the structural schematic diagram of power semiconductor thermal impedance measuring system provided by the invention；
Fig. 2 is the structural schematic diagram of tested module in the present invention；
Fig. 3 is the structural schematic diagram of the embodiment one of power semiconductor thermal impedance measuring system provided by the invention；
Fig. 4 is the flow chart of power semiconductor thermal impedance measurement method provided by the invention；
Fig. 5 is the load current waveform schematic diagram of the embodiment one of thermal impedance measurement method provided by the invention；
Fig. 6 is that the embodiment one of thermal impedance measurement method provided by the invention is testing one group of test measured power semiconductor
The waveform diagram of device.
In figure:
1- direct current supply module；
2- tested module；
3- drive module；
4- total control module；
5- measurement module.
Specific embodiment
The present invention is described in detail combined with specific embodiments below.Following embodiment will be helpful to the technology of this field
Personnel further understand the present invention, but the invention is not limited in any way.It should be pointed out that the ordinary skill of this field
For personnel, without departing from the inventive concept of the premise, several changes and improvements can also be made.These belong to the present invention
Protection scope.
Fig. 1 is the structural schematic diagram of power semiconductor thermal impedance measuring system provided by the invention, as shown in Figure 1,
This system may include: direct current supply module 1, tested module 2 (comprising n unit under test and n tested radiators), driving mould
Block 3, measurement module 5, total control module 4.Wherein, the 1 direct current output port group number of direct current supply module and the tested list
First number is identical (as shown in Figure 1 including n unit under test, n is the integer more than or equal to 1), the output port of direct current supply module 1
It is corresponding with the DC bus of the unit under test to be connected.The direct current supply module 1 can be according to the direct current of total control module 4
Pressure refers to given value, changes output end DC voltage.The drive module 3 receives the switch state letter that total control module 4 exports
Number, and the power semiconductor that will be driven after its power amplification in the unit under test.The measurement module 5 is for detecting institute
State the electrical and state of temperature of the power semiconductor and load blocks in unit under test；The total control module 4, according to institute
It states electrical, the temperature information that measurement module 5 detects and carries out judgement and operation, and the switch state of the drive module 3 is provided
Signal；Or provide the reference given value of the direct current supply module 1；Or provide the measuring signal of the measurement module 5.
Fig. 2 is the structural schematic diagram of tested module in the present invention, and according to Fig.2, the tested module includes tested single
First and optionally tested radiator.The unit under test includes H composed by two bridge arms (being identified as ARM1, ARM2 in Fig. 2)
Bridge or full-bridge circuit and corresponding load blocks 7；The wherein arbitrary topology that the bridge arm is made of power semiconductor
The half-bridge structure of form, the load blocks number is identical as the unit under test number, the two-port point of each load blocks
It is not connected with the midpoint of two bridge arms in each unit under test.Every bridge arm includes two series aiding connections by measurement of power in Fig. 2
Rate semiconductor module (DUT1_H, DUT1_L and DUT2_H, DUT2_L are identified as in Fig. 2) and measured power semiconductor device
The corresponding tested radiator (HS1_H, HS1_L and HS2_H, HS2_L are identified as in Fig. 2) of part, the power in tested module 2 are partly led
Body device includes: insulated gate bipolar transistor (IGBT) and the diode (Diode) with IGBT reverse parallel connection.
Fig. 3 is the structural schematic diagram of the embodiment one of power semiconductor thermal impedance measuring system provided by the invention；
Including a unit under test, 3, total control modules 4 of a drive module and a measurement module 5；Wherein unit under test
It include four measured power semiconductor devices including a H bridge test circuit and pure inductance load blocks L, a H bridge test circuit
Part module DUT1_H (including T1, D1), DUT1_L (including T2, D2), DUT2_H (including T3, D3), DUT2_L (including T4,
D4)；Measurement module 5 by five probes S1, S2, S3, S4, SL measure respectively power semiconductor DUT1_H, DUT1_L,
Electrical/state of temperature of DUT2_H, DUT2_L, inductive load L and corresponding cooling fin, wherein the probe include voltage probe,
One or more of current probe, temperature probe；Measurement module also passes through four junction temperature measurement modules ST1, ST2, ST3, ST4
Measure the junction temperature of four measured power semiconductor modules.Four junction temperature measurement module leading with measured power semiconductor devices
Logical pressure drop is temperature sensitive parameter, to estimate the junction temperature of device.
Further, on the basis of power semiconductor thermal impedance measuring table, the invention proposes corresponding function
Rate semiconductor heat impedance measurement method, Fig. 4 are the flow chart of power semiconductor thermal impedance measurement method provided by the invention；
Obtain the loop test side of all power semiconductors thermal impedance under given heated current and radiating condition in unit under test
Method is as follows:
S1: setting measured device executes step S2；
S2: according to the measured device of setting, the size and direction of heated current is set, as the tested module
The current target value of middle load blocks executes step S3；
S3: by the switch of device in control test cell, electric current is generated in load blocks, when reaching electric stable state
When, the electric current for flowing through measured device is continuous current or the unidirectional pulse electric current that duty ratio is fixed, and executes step S4；
S4: recording the temperature of measured device, if measured device has reached thermal steady state, thens follow the steps S5, if tested
Device is not up to thermal steady state, then returns to step S3；
S5: heated current is quickly cut off by the switch of device in control test cell, executes step S6；
S6: temperature change of the record measured device in temperature-fall period executes step S7；
S7: switching box part temperature and environment temperature then follow the steps if measured device junction temperature has reached environment temperature
S8 returns to step S3 if the junction temperature of measured device is still higher than environment temperature；
S8: if all measured devices be completed thermal impedance measurement, then follow the steps S9, if still have in tested module by
It surveys device and does not complete thermal impedance measurement, then return to step S1；
S9: test terminates.
Fig. 5 is the load current waveform schematic diagram of the embodiment one of thermal impedance measurement method provided by the invention, is given
Four power semiconductor device modules (eight measured devices altogether) in Fig. 3 are carried out with the sequence of cycling hot impedance measurement, electric current
Reference direction is to flow to ARM2 by the ARM1 in Fig. 2.One thermal impedance measurement period (T identified in Fig. 5) includes four heating
Process (P1, P3, P5, P7 for being identified in Fig. 5) and corresponding temperature-fall period (P2, P4, P6, P8 for being identified in Fig. 5).Different is negative
Carry current direction different measured devices can be heated, when load current be timing, T1, D2, D3, T4 can be added
Heat can heat D1, T2, T3, D4 when load current is negative.The length of temperature-fall period is according to test condition and test
Target determines that the present embodiment measures junction temperature using the conduction voltage drop of device, in order to avoid measurement single in temperature-fall period
Temperature rise caused by first short circuit and load current variation, the module that cannot be simultaneously turned on same bridge arm or diagonal line bridge arm carry out temperature
Degree measurement, i.e., the device that can only be combined to following two carry out temperature measurement, DUT1_H and DUT2_H simultaneously, DUT1_L and
DUT2_L.Fig. 6 gives the embodiment one of thermal impedance measurement method provided by the invention in one group of test measured power of test half
The waveform diagram for (P1, P2 being labeled as in Fig. 5) when conductor device, including load current iL, device junction temperature Tj, test electric current iM
And the driving voltage waveform v of power semiconductorGE.P1, P2 stage have carried out thermal impedance measurement simultaneously to T1, D3, in P1
By the high-speed switch of four power semiconductors in measuring unit in stage, load current is controlled can be ignored not for ripple
The Constant Direct Current electric current of meter, heats measured device.After measured device reaches thermal steady state, shape is switched by changing
State makes load current drop quickly to zero, into the P2 stage.In the P2 stage, by junction temperature measurement module ST1, ST3 respectively to
T1, D3 injection measurement electric current, keep measured device conducting, measure the size of electric current much smaller than heated current, are produced by measurement electric current
Raw heat is negligible.
It should be noted that the step in the test method of the power semiconductor thermal impedance characteristic provided by the invention
Suddenly, corresponding module, device, unit etc. in the test platform of the power semiconductor loss characteristic be can use and give reality
Existing, the technical solution that those skilled in the art are referred to the system realizes the step process of the method, that is, the system
In embodiment can be regarded as realize the method preference, it will not be described here.
Specific embodiments of the present invention are described above.It is to be appreciated that the invention is not limited to above-mentioned
Particular implementation, those skilled in the art can make a variety of changes or modify within the scope of the claims, this not shadow
Ring substantive content of the invention.In the absence of conflict, the feature in embodiments herein and embodiment can any phase
Mutually combination.
Claims (9)
1. a kind of thermal impedance measuring system of power semiconductor characterized by comprising direct current supply module, tested mould
Block, drive module, measurement module and total control module；Wherein:
The direct current supply module, the given reference voltage for being provided according to the total control module, to the tested module
Electric energy is provided；
The tested module includes: at least one unit under test, and the unit under test is used for the work of simulated power semiconductor devices
Make state；The unit under test includes: that measuring circuit composed by power semiconductor and the measuring circuit are corresponding
Load blocks；
The drive module, the switch state signal for exporting the total control module carry out power amplification, obtain corresponding
Driving signal, and control by the driving signal switch state of power semiconductor in the unit under test；
The measurement module, the measuring signal for being provided according to the total control module, detects the function in the measuring circuit
The electric state and state of temperature of rate semiconductor devices, the corresponding load blocks of the measuring circuit；
The total control module gives reference voltage for providing to the direct current supply module, and to the measurement module
The result measured is analyzed and processed, to obtain the thermal impedance characteristic of power semiconductor in the unit under test.
2. the thermal impedance measuring system of power semiconductor according to claim 1, which is characterized in that the measurement electricity
Road includes: the full-bridge circuit being made of power semiconductor or H-bridge circuit.
3. the thermal impedance measuring system of power semiconductor according to claim 1, which is characterized in that the measurement electricity
Lu Zhong further include: radiator, heat of the radiator for power semiconductor generation of dissipating.
4. the thermal impedance measuring system of power semiconductor according to claim 1, which is characterized in that the measurement mould
Block includes: temperature measurement submodule, voltage measurement submodule, current measurement submodule；Wherein:
The temperature measures submodule, and for obtaining the temperature parameter of measuring circuit, the temperature parameter includes: power semiconductor
The junction temperature of device, the skin temperature of power semiconductor, the temperature of radiator, any in environment temperature appoint multiple temperature
Angle value；
The voltage measurement submodule, for obtaining power semiconductor in measuring circuit, corresponding in the measuring circuit
The voltage value of load blocks；
The current measurement submodule, for obtaining power semiconductor in measuring circuit, corresponding in the measuring circuit
The current value of load blocks.
5. the thermal impedance measuring system of power semiconductor according to claim 4, which is characterized in that the temperature is surveyed
Quantum module uses the measurement sensor of temperature sensor or temperature sensitive electric parameter；
Corresponding load blocks include following any form in the measuring circuit:
Pure inductive circuit；
The mixed type electrical impedance network as composed by inductance, capacitor, resistance, transformer.
6. the thermal impedance measuring system of power semiconductor according to any one of claims 1-5, which is characterized in that
The power semiconductor includes following any kind:
Based on silicon, silicon carbide, gallium nitride semiconductor chip；
Using module, the power semiconductor of crimping, the production of discrete encapsulation technology.
7. a kind of thermal impedance measurement method of power semiconductor, which is characterized in that be applied to any one of claim 1-6
In a kind of thermal impedance measuring system of power semiconductor, which comprises
The switch state of power semiconductor in unit under test is controlled, according to driving signal to be formed in the unit under test
Heated current；
After the power semiconductor reaches thermal steady state, controlled in the unit under test by the driving signal
The switch state of power semiconductor changes the heated current in the unit under test；
The power loss of power semiconductor in the unit under test is obtained, and measures and record the power semiconductor device
The temperature change value of part；
According to the power loss and temperature change value of the power semiconductor, analysis obtains the power semiconductor
Thermal resistance parameters.
8. the thermal impedance measurement method of power semiconductor according to claim 7, which is characterized in that the heating electricity
The form of stream includes following any:
Flow through the unidirectional pulse electric current of power semiconductor；
Flow through the continuous direct current or alternating current of power semiconductor.
9. the thermal impedance measurement method of power semiconductor according to claim 7, which is characterized in that the power half
The power loss of conductor device includes: switching loss and conduction loss.
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| CN110118617A (en) * | 2019-05-30 | 2019-08-13 | 上海元城汽车技术有限公司 | The internal temperature of battery modules determines method, apparatus and intelligent terminal |
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| CN112327967A (en) * | 2020-10-19 | 2021-02-05 | 珠海格力电器股份有限公司 | Temperature control device and method of power device and electrical equipment |
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| CN117434415A (en) * | 2023-12-20 | 2024-01-23 | 富芯微电子有限公司 | Semiconductor device thermal resistance measuring equipment |
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| CN113759229A (en) * | 2021-09-13 | 2021-12-07 | 上海交通大学 | Power semiconductor switching loss measurement method and system based on temperature measurement |
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