CN113702794A - Power semiconductor device health state evaluation method based on thermal impedance characteristic frequency - Google Patents
Power semiconductor device health state evaluation method based on thermal impedance characteristic frequency Download PDFInfo
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Abstract
The invention provides a method for detecting the health state of a power semiconductor device based on thermal impedance characteristic frequency, which comprises the following steps: extracting the thermal impedance characteristic frequency of the power semiconductor device and the radiator thereof; detecting the variation of n thermal impedance characteristic frequencies; and comparing the change condition of the thermal impedance characteristic frequency with the thermal impedance characteristic frequency in a healthy state, and evaluating the healthy state of the power semiconductor device. According to the invention, the thermal impedance characteristic frequency of the power semiconductor device and the radiator thereof is obtained by extracting the temperature curves of the heat flow output by the power semiconductor device and the junction, the shell and the radiator; the health states of different positions inside and outside the power semiconductor device are reflected through a plurality of thermal impedance characteristic frequency change trends. The invention can detect the internal and external health states of the power semiconductor device efficiently, with low cost and in a non-invasive manner.
Description
Technical Field
The invention relates to the technical field of power electronics, in particular to a method for evaluating the health state of a power semiconductor device based on thermal impedance characteristic frequency.
Background
The power device is one of the most failure-prone components in the converter, the state of the power semiconductor device is monitored, the health state of the power semiconductor device is judged, and the reliability of a power electronic system can be effectively improved. In recent years, the frequency domain thermal impedance model is receiving increasing attention because it can accurately predict the temperature characteristics of the power semiconductor device over the full frequency band, compared to the conventional Foster and Cauer models. The existing method for reflecting the health state is based on time domain analysis, a large number of parameters which are relatively complex and need to be solved are applied, and the health state of the semiconductor device is evaluated by adopting frequency domain analysis, so that the difficulty in parameter extraction is reduced, and the health state can be effectively reflected.
Disclosure of Invention
In view of the above-mentioned shortcomings in the prior art, the present invention provides a method for evaluating the health status of a power semiconductor device based on the characteristic frequency of thermal impedance.
In a first aspect of the present invention, a method for evaluating a health status of a power semiconductor device based on a thermal impedance characteristic frequency is provided, including:
extracting the thermal impedance characteristic frequency of the power semiconductor device; the power semiconductor device is a power semiconductor device comprising a radiator or a power semiconductor device not comprising a radiator;
detecting the variation of n thermal impedance characteristic frequencies;
and comparing the change condition of the thermal impedance characteristic frequency with the thermal impedance characteristic frequency in a healthy state, and evaluating the healthy state of the power semiconductor device.
Optionally, the evaluating a state of health of the power semiconductor device, wherein:
the thermal impedance characteristic frequency reflects the health states of different positions of the power semiconductor device, and comprises the health state judgment of a multilayer structure of the internal power semiconductor device and the health state judgment of an external radiator and a contact interface thereof;
and comparing the extracted thermal impedance characteristic frequency of the power semiconductor device with the thermal impedance characteristic frequency in a healthy state, and judging that the corresponding position of the power semiconductor device is aged when the change rate of the thermal impedance characteristic frequency of different frequency bands reaches a set degree.
More preferably, the n characteristic frequencies of thermal impedance include one or more of a low-band characteristic frequency of thermal impedance, a middle-band characteristic frequency of thermal impedance, and a high-band characteristic frequency of thermal impedance, and the low-band frequency, the middle-band frequency, and the high-band frequency vary according to the type of the power semiconductor device.
Optionally, the power semiconductor device includes:
-any of silicon-based and non-silicon-based IGBTs, MOSFETs, transistors, thyristors, diodes;
-any of the power semiconductor devices in a package form using a single tube, soldered or crimped module, wherein the crimped module comprises any of a copper substrate and a copper-free substrate;
-using any of the power semiconductor devices including air-cooled and liquid-cooled heat sinks.
Optionally, the method for extracting the characteristic frequency of the thermal impedance of the power semiconductor device and the heat sink thereof is any one of the following methods:
extracting the thermal impedance characteristic frequency of the power semiconductor device and the radiator thereof by acquiring a heat flow curve of the power semiconductor device when the loss changes;
extracting the thermal impedance characteristic frequency of the power semiconductor device and the heat radiator thereof by acquiring the junction, shell and heat radiator temperature curves of the power semiconductor device when the loss changes;
extracting the thermal impedance characteristic frequency of the power semiconductor device and the heat radiator thereof by acquiring a heat flow curve of the power semiconductor device when the loss changes and a junction, shell and heat radiator temperature curve;
the range interval of the thermal impedance characteristic frequency can be determined by the extraction method of the junction, shell and heat dissipation temperature curves; the extraction precision of the thermal impedance characteristic frequency can be improved by the extraction method of the heat flow curve.
Optionally, the extracting the thermal impedance characteristic frequency of the power semiconductor device and the heat sink thereof by obtaining the temperature curves of the junction, the shell, and the heat sink of the power semiconductor device when the loss changes includes:
recording junction temperature, shell temperature time domain step response and step loss;
calculating junction-shell thermal impedance, and fitting with m-order Foster network to convert thermal impedance expressed in time domain into thermal impedance in frequency domain
By s2 pi f j, f 10xI.e. complex frequency s is represented by 2 π j 10xInstead, a second derivative is obtained to obtain a graph function d (x):
finding out a minimum value point of the graph function D (x) in an effective interval, namely corresponding to the characteristic frequency of the thermal impedance, wherein j is an imaginary unit; x is a variable corresponding to the characteristic frequency f.
Optionally, the extracting the thermal impedance characteristic frequency of the power semiconductor device and the heat sink thereof by obtaining a heat flow curve of the power semiconductor device when the loss changes includes:
shell temperature TcMeasurement point and radiator temperature ThThe measurement points are close enough apart that the thermal path between them is equivalent to a thermal resistance RchCalculating the output heat flow P by the following formulaout(t)：
Fitting a time domain output heat flow curve of the power semiconductor device, wherein a fitting formula is as follows:
in the above formula: pinIs the input loss; epsilon (t) is unit step response in a time domain; f. of1、f2…fnAll characteristic frequencies of the frequency domain thermal impedance model, namely the thermal impedance characteristic frequencies; n is the characteristic frequency ofAnd (4) counting.
Optionally, the extracting of the thermal impedance characteristic frequency of the power semiconductor device and the heat sink thereof is implemented by finite element simulation, and includes:
establishing a geometric model of the power semiconductor device in finite element software, carrying out proper mesh subdivision, and establishing a finite element model;
applying a power step with a certain size to a finite element model of the power semiconductor device to perform temperature field simulation;
and extracting the shell temperature and the radiator temperature through the probe, and extracting the thermal impedance characteristic frequency by using an output heat flow curve.
In a second aspect of the present invention, a health status detection terminal for a power semiconductor device is provided, which includes a memory, a processor, and a computer program stored in the memory and executable on the processor, and the processor is configured to execute the health status evaluation method for a power semiconductor device based on a thermal impedance characteristic frequency when executing the program.
In a third aspect of the present invention, a computer-readable storage medium is provided, wherein instructions that, when executed by a processor in a device, enable the device to perform the method for assessing the health of a power semiconductor device based on a characteristic frequency of thermal impedance.
Compared with the prior art, the embodiment of the invention has at least one of the following beneficial effects:
the method for evaluating the health state of the power semiconductor device based on the thermal impedance characteristic frequency can effectively judge the use state of the power semiconductor device by utilizing the thermal impedance characteristic frequency, can replace an aged device in time and improve the reliability.
Compared with a time domain analysis result, the frequency domain analysis-based method is more accurate, the process is simpler and more convenient, and the internal and external health states of the power semiconductor device can be detected efficiently, at low cost and noninvasively.
Drawings
Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:
FIG. 1 is a flow chart of a method for evaluating the health of a power semiconductor device based on thermal impedance characteristic frequency according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a power semiconductor device model based on finite element simulation software according to an embodiment of the present invention;
FIG. 3 is a flowchart of a method for verifying the thermal impedance characteristic frequency response of a power semiconductor device using finite element simulation software according to an embodiment of the present invention;
FIG. 4 is a schematic diagram illustrating simulation of a solder layer of a substrate under different fatigue health conditions according to an embodiment of the present invention;
FIG. 5 is a graph illustrating the variation of the thermal impedance characteristic frequency of the thermal grease under different fatigue health conditions in accordance with an embodiment of the present invention.
Detailed Description
The present invention will be described in detail with reference to specific examples. The following examples will assist those skilled in the art in further understanding the invention, but are not intended to limit the invention in any way. It should be noted that it would be obvious to those skilled in the art that various changes and modifications can be made without departing from the spirit of the invention. All falling within the scope of the present invention.
Fig. 1 is a flowchart of a method for evaluating a health status of a power semiconductor device based on a thermal impedance characteristic frequency according to an embodiment of the present invention.
Referring to fig. 1, the method for detecting the health status of the power semiconductor device based on the thermal impedance characteristic frequency in the present embodiment includes the following steps:
s100, extracting the thermal impedance characteristic frequency of a power semiconductor device, wherein the power semiconductor device is a power semiconductor device comprising a radiator or a power semiconductor device not comprising the radiator;
in the step, step loss is applied to the power semiconductor device, a time domain thermal impedance curve and a heat flow curve are obtained by obtaining temperature curves of a junction, a shell and a radiator of the power semiconductor device when loss changes, and thermal impedance characteristic frequencies of the power semiconductor device and the radiator of the power semiconductor device are extracted according to the thermal impedance curve and the heat flow curve. And confirming the characteristic frequency range by using the thermal impedance curve, and confirming the size of the characteristic frequency by using the heat flow curve.
S200, detecting the change conditions of n thermal impedance characteristic frequencies;
in the step, n can be selected from 1 to 3, and can be selected according to the type and the precision of the power semiconductor device. Specifically, the low-frequency band, the intermediate-frequency band and the high-frequency band may be changed according to different types of corresponding power semiconductor devices from one or more of a low-frequency band thermal impedance characteristic frequency, an intermediate-frequency band thermal impedance characteristic frequency and a high-frequency band thermal impedance characteristic frequency.
And S300, comparing the change condition of the thermal impedance characteristic frequency obtained in the S200 with the thermal impedance characteristic frequency in a healthy state, and evaluating the healthy state of the power semiconductor device.
In the embodiment, by extracting the thermal impedance characteristic frequency of the power semiconductor device and comparing the thermal impedance characteristic frequency with the thermal impedance characteristic frequency in a healthy state, when the change rate of the thermal impedance characteristic frequency of different frequency bands reaches a certain degree, it can be judged that the corresponding position of the power semiconductor device is aged. The embodiment utilizes the thermal impedance characteristic frequency, can effectively judge the health state and the use state of the power semiconductor device, can replace an aged device in time, and improves the reliability.
In the embodiment, the change of n thermal impedance characteristic frequencies is detected to reflect the health states of different positions of the power semiconductor device; according to the measurement accuracy and the device type, the extracted thermal impedance characteristic frequencies are 1-3 and are marked as f1, f2 and f 3; generally, the range of the low-frequency band thermal impedance characteristic frequency f1 is 0-5 Hz; the range of the medium-frequency band thermal impedance characteristic frequency f2 is 5-100 Hz; the high-band thermal impedance characteristic frequency f3 ranges from greater than 100Hz, and the frequency range varies with the type of period.
In practical applications, the health status of the power semiconductor device mainly includes the aging of the solder layer of the internal chip, the aging of the solder layer of the bottom plate, the aging of the contact interface of the external heat sink, and the aging of the heat sink. In this embodiment, the health status of the power semiconductor device can be well evaluated by using the low-frequency band thermal impedance characteristic frequency, the medium-frequency band thermal impedance characteristic frequency, and the high-frequency band thermal impedance characteristic frequency.
Specifically, the low-frequency band thermal impedance characteristic frequency reflects the health state of a contact interface heat dissipation material of the power semiconductor device bottom plate and other connecting parts, and the health state of a power semiconductor device-radiator contact interface containing the radiator and the radiator; for a power semiconductor device without a radiator, along with the gradual serious aging degree of a heat dissipation material of a contact interface of a bottom plate and other connecting parts, the characteristic frequency of low-frequency-band thermal impedance is gradually reduced; for the power semiconductor device with air-cooled heat dissipation and heat conduction silicone grease contact, the characteristic frequency of low-frequency-band thermal impedance gradually decreases along with the gradual serious aging degree of the heat radiator or the heat conduction silicone grease; for the power semiconductor device without the heat-conducting silicone grease, the low-frequency band thermal impedance characteristic frequency is reduced along with the reduction of the health state of the radiator by adopting air cooling, liquid cooling heat dissipation or direct contact with a heat-dissipating medium. The medium-frequency-band thermal impedance characteristic frequency reflects the health state of the copper-clad ceramic substrate and the base plate solder layer in the device, and gradually rises along with the gradual serious aging degree of the base plate solder layer. The high-frequency-band thermal impedance characteristic frequency reflects the health state of the chip and the chip solder layer, and gradually decreases along with the gradual aging degree of the chip and the chip solder layer.
In this embodiment, the frequency domain transfer function of the power loss of the chip inside the power semiconductor device to the heat flow at different nodes on the heat path of the device may be equivalent to a plurality of cascaded low-pass filters, and the transition frequency of the low-pass filters is associated with the characteristic frequency of the thermal impedance of the power semiconductor device. In order to obtain the thermal impedance characteristic frequency of the corresponding power semiconductor device and the heat sink thereof, the heat flow curve of the power semiconductor device during loss change can be obtained, the junction, shell and heat sink temperature curve can be obtained, or the two curves are combined. In a specific operation, the output heat flow of the power semiconductor device, and junction, shell, and heat sink temperature profiles may be obtained based on a device data manual, based on finite element simulations, or based on experimental measurements. The loss step is obtained by cutting off the current when heating the power semiconductor device to a steady state of temperature. The heat flow can be read with a heat flow sensor or extracted indirectly through the shell-to-heat sink temperature difference. The junction temperature can be estimated indirectly by temperature-sensitive parameters or measured directly by optical fibers or thermocouples. The shell temperature can be measured with an optical fiber, a thermocouple, or a temperature sensitive resistor. Of course, in other embodiments, the information may be obtained through other routes.
The method in the embodiment of the invention is applicable to power semiconductor devices of which the types comprise silicon-based and non-silicon-based IGBTs, MOSFETs, transistors, thyristors and diodes, and the packaging form comprises a single tube, a welding and crimping module, wherein the module comprises a copper substrate and a copper-free substrate, and the radiator comprises air cooling and liquid cooling. Of course, this is merely an example, and other types of power semiconductor devices may be included.
To better illustrate the above method, in an embodiment, the method for extracting the characteristic frequency of the thermal impedance through the temperature variation curve of the device junction, the case and the heat sink may include:
recording junction temperature, shell temperature time domain step response and step loss;
calculating junction-shell thermal impedance by formula
And the thermal impedance expressed by the time domain is converted into the thermal impedance under the frequency domain by using the m-order Foster network fitting
By s2 pi f j, f 10xI.e. complex frequency s is represented by 2 π j 10xInstead, a second derivative is obtained to obtain a graph function d (x):
finding out the minimum value point of the graph function D (x) in the effective interval, namely the corresponding thermal impedance characteristic frequency.
In the embodiment, the junction, shell and radiator temperature change curves are adopted to extract the thermal impedance characteristic frequency, so that the range interval of the thermal impedance characteristic frequency can be determined. And judging the variation trend of the characteristic frequency through the knot-shell thermal impedance second order derivative image.
In another embodiment, the characteristic frequency of the thermal impedance is extracted by a method of junction, shell and heat sink temperature curves, which can be performed by referring to the following operations:
the shell temperature Tc measuring point and the radiator temperature Th measuring point are close enough, the heat path between them can be equivalent to a thermal resistance Rch, and the output heat flow is calculated by the formula:
fitting a time domain output heat flow curve of the power semiconductor device, wherein a fitting formula is as follows:
in the above formula: pinIs the input loss; epsilon (t) is unit step response in a time domain; f. of1、f2…fnAll the characteristic frequencies of the frequency domain thermal impedance model are the required thermal impedance characteristic frequencies; n is the number of characteristic frequencies.
According to the embodiment, the thermal impedance characteristic frequency is extracted through the output heat flow of the power semiconductor device, so that the extraction precision of the thermal impedance characteristic frequency can be improved, and the accuracy and reliability of the health evaluation of the power semiconductor device are guaranteed.
As mentioned above, the characteristic frequency of the thermal impedance for a particular extraction can be achieved in a variety of ways, and in a preferred embodiment, by finite element simulation. Specifically, finite element simulation including COMSOL, ANSYS, ABAQUS and the like can be adopted, a geometric model of the power semiconductor device is established in finite element software, proper mesh subdivision is carried out, and a finite element model is established; and applying a certain power step to a finite element model of the power semiconductor device to perform temperature field simulation. The shell temperature and the radiator temperature are extracted through the probe, and the thermal impedance characteristic frequency is extracted by utilizing the output heat flow method.
Specifically, the following description is given by way of a specific simulation example.
Fig. 2 is a schematic diagram of a power semiconductor device model based on finite element simulation software provided in an embodiment of the present invention. As shown in fig. 2, the IGBT model built by COMSOL software includes a seven-layer structure of an IGBT chip layer, a chip solder layer, an upper copper layer, a ceramic layer, a lower copper layer, a substrate solder layer, and a substrate. The main parameters of the module include the material, thickness, density, thermal conductivity, heat capacity value and thermal resistance value of each layer.
FIG. 3 is a flowchart of a method for verifying the thermal impedance characteristic frequency of the thermal impedance device in response to the health of the power semiconductor device according to the embodiment of the present invention using finite element simulation software.
Referring to fig. 3, the method for verifying the thermal impedance characteristic frequency of the thermal impedance by using COMSOL in the embodiment reflects the health state of the IGBT, and includes the following steps:
and S1, mesh generation is carried out on the geometric model of the IGBT device, and heat loss is applied to carry out simulation. The IGBT geometry model has been built as described above, with appropriate meshing to ensure accuracy of the resulting temperature, and boundary heat sources applied at the chip level to simulate step loss.
And S2, obtaining the junction temperature and the shell temperature of the IGBT and drawing a junction-shell thermal impedance curve. Reading junction temperature and shell temperature in the IGBT heating process by using a boundary probe, and calculating according to a formula to obtain junction-shell thermal impedance
And S3, obtaining the thermal impedance characteristic frequency under the healthy state by solving a second order derivative according to the frequency domain thermal impedance curve. Converting time domain thermal impedance to frequency domain thermal impedance
By s2 pi f j, f 10xI.e. complex frequency s is represented by 2 π j 10xInstead, a second derivative is obtained to obtain a graph function d (x):
finding out the minimum value point of the graph function D (x) in the effective interval, namely the corresponding thermal impedance characteristic frequency.
And S4, setting holes to simulate different health states and extracting corresponding thermal impedance characteristic frequencies. The aging mechanism of the IGBT is that the thermal expansion coefficients of packaging materials of all layers of the IGBT module are not matched, and under the action of alternating shear stress, a solder layer is subjected to fatigue damage to generate cavities and is continuously enlarged under the action of temperature circulation and power impact of multiple time scales. Therefore, a certain number of cavities with proper sizes are arranged on different layers of the IGBT module to simulate the aging of the layers. Cavities with different numbers and sizes are respectively arranged on the chip solder layer and the substrate solder layer to simulate aging with different degrees, and corresponding thermal impedance characteristic frequency is extracted according to the method.
And S5, comparing the thermal impedance characteristic frequency with the thermal impedance characteristic frequency in the healthy state to obtain the thermal impedance characteristic frequency response aging rule. Along with the gradual serious aging degree of the solder layer of the chip, the high-frequency band thermal impedance characteristic frequency also changes correspondingly, the medium-frequency band thermal impedance characteristic frequency reflects the health state of the solder layer of the bottom plate, and along with the gradual serious aging degree of the solder layer of the bottom plate, the medium-frequency band thermal impedance characteristic frequency gradually rises; the low-frequency-band thermal impedance characteristic frequency reflects the health state of the heat-conducting silicone grease, the heat-conducting silicone grease can be pumped out and dried to crack under the temperature circulation and power impact of multiple time scales, so that the thermal resistance changes, and the low-frequency-band thermal impedance characteristic frequency gradually decreases along with the gradual severe aging degree of the heat-conducting silicone grease.
FIG. 4 is a schematic diagram of a simulation of a solder layer under different fatigue health states according to an embodiment of the present invention. As shown in fig. 4, the states of the substrate solder layer under four conditions of health, aging initiation, aging degree increase and failure are respectively shown, except for adding the voids, the situation that the voids merge with each other gradually along with the aging process to cause the edge area to decrease is simulated by adopting the edge area to decrease. The substrate solder layer area set to start aging was 80% in the healthy state, the substrate solder layer area set to aggravate the aging was 70% in the healthy state, and the substrate solder layer area set to fail was 50% in the healthy state. According to the change rule of the low-frequency thermal impedance characteristic frequency, the low-frequency thermal impedance characteristic frequency is gradually reduced along with the gradual serious aging degree of the base plate solder layer.
FIG. 5 is a graph illustrating the variation of the thermal impedance characteristic frequency of the thermal grease in different fatigue health states according to an embodiment of the present invention. Aging of the heat-conducting silicone grease includes pumping out of the heat-conducting silicone grease due to mismatch of thermal expansion coefficients of the bottom plate and the surface of the heat sink and drying and cracking of the heat-conducting silicone grease due to separation, flow and volatilization of the grease polymer matrix in the heating process of the heat-conducting silicone grease, and the thermal resistance of the heat-conducting silicone grease is increased as a result. Therefore, the aging of the heat-conducting silicone grease is simulated by increasing the thickness of the heat-conducting silicone grease layer in the COMSOL simulation. The thickness of Phase I simulated heat-conducting silicone grease in a healthy state is 0.05mm, the thickness of Phase II simulated heat-conducting silicone grease is 0.1mm, the thickness of Phase III simulated heat-conducting silicone grease is 0.15mm, and the thickness of Phase IV simulated heat-conducting silicone grease is 0.2 mm. According to the change rule of the low-frequency-band thermal impedance characteristic frequency, the low-frequency-band thermal impedance characteristic frequency is gradually reduced along with the gradual serious aging degree of the heat-conducting silicone grease.
Based on the same technical concept, another embodiment of the present invention further provides a health status detection terminal for a power semiconductor device, which includes a memory, a processor, and a computer program stored in the memory and executable on the processor, where the processor, when executing the program, is operable to perform the health status detection method for a power semiconductor device based on a thermal impedance characteristic frequency in any one of the above embodiments.
Based on the same technical concept, another embodiment of the present invention further provides a computer-readable storage medium, wherein when the instructions in the storage medium are executed by a processor in the apparatus, the apparatus is enabled to execute the method for evaluating the health status of the power semiconductor device based on the thermal impedance characteristic frequency.
It can be seen from the above embodiments that, in the method for evaluating the health status of a power semiconductor device based on the thermal impedance characteristic frequency according to the embodiments of the present invention, the thermal impedance characteristic frequency of the power semiconductor device and the heat sink thereof is obtained by extracting the temperature curves of the heat flow/junction, the shell, and the heat sink output by the power semiconductor device, and the health status of different positions inside and outside the power semiconductor device is reflected by the variation trend of the thermal impedance characteristic frequency, so that the use status of the power semiconductor device can be effectively judged, the result is more accurate, the process is simpler and more convenient, and the health status inside and outside the power semiconductor device can be efficiently, inexpensively, and noninvasively detected.
The foregoing description of specific embodiments of the present invention has been presented. It is to be understood that the present invention is not limited to the specific embodiments described above, and that various changes or modifications may be made by one skilled in the art within the scope of the appended claims without departing from the spirit of the invention. The embodiments and features of the embodiments of the present application may be combined with each other arbitrarily without conflict.
Claims (10)
1. A method for evaluating the health state of a power semiconductor device based on thermal impedance characteristic frequency is characterized by comprising the following steps:
extracting the thermal impedance characteristic frequency of the power semiconductor device; the power semiconductor device is a power semiconductor device comprising a radiator or a power semiconductor device not comprising a radiator;
detecting the variation of n thermal impedance characteristic frequencies;
and comparing the change condition of the thermal impedance characteristic frequency with the thermal impedance characteristic frequency in a healthy state, and evaluating the healthy state of the power semiconductor device.
2. The method according to claim 1, wherein the health status of the power semiconductor device is evaluated, wherein:
the thermal impedance characteristic frequency reflects the health states of different positions of the power semiconductor device, and comprises the health state judgment of a multilayer structure of the internal power semiconductor device and the health state judgment of an external radiator and a contact interface thereof;
and comparing the extracted thermal impedance characteristic frequency of the power semiconductor device with the thermal impedance characteristic frequency in a healthy state, and judging that the corresponding position of the power semiconductor device is aged when the change rate of the thermal impedance characteristic frequency of different frequency bands reaches a set degree.
3. The method for assessing the health status of a power semiconductor device according to claim 2, wherein the n characteristic frequencies of thermal impedance include one or more of a low-band characteristic frequency of thermal impedance, a middle-band characteristic frequency of thermal impedance, and a high-band characteristic frequency of thermal impedance, and the low-band frequency, the middle-band frequency, and the high-band frequency vary according to the type of the power semiconductor device; wherein:
the low-frequency-band thermal impedance characteristic frequency reflects the health state of a contact interface heat dissipation material of the power semiconductor device bottom plate and other connecting parts, and the health state of a power semiconductor device-radiator contact interface containing the radiator and the radiator; for a power semiconductor device without a radiator, along with the gradual serious aging degree of a heat dissipation material of a contact interface of a bottom plate and other connecting parts, the characteristic frequency of low-frequency-band thermal impedance is gradually reduced; for the power semiconductor device with air-cooled heat dissipation and heat conduction silicone grease contact, the characteristic frequency of low-frequency-band thermal impedance gradually decreases along with the gradual serious aging degree of the heat radiator or the heat conduction silicone grease; for the power semiconductor device without the heat-conducting silicone grease, the low-frequency band thermal impedance characteristic frequency is reduced along with the reduction of the health state of the radiator by adopting air cooling, liquid cooling heat dissipation or direct contact with a heat-dissipating medium;
the medium-frequency-band thermal impedance characteristic frequency reflects the health states of a copper-clad ceramic substrate and a baseplate solder layer in the power semiconductor device, and gradually increases along with the gradual aging degree of the baseplate solder layer;
the high-frequency-band thermal impedance characteristic frequency reflects the health state of the chip of the power semiconductor device and the chip solder layer, and gradually decreases along with the aging degree of the chip and the chip solder layer.
4. The method according to claim 1, wherein the power semiconductor device comprises:
-any of silicon-based and non-silicon-based IGBTs, MOSFETs, transistors, thyristors, diodes;
-any of the power semiconductor devices in a package form using a single tube, soldered or crimped module, wherein the crimped module comprises any of a copper substrate and a copper-free substrate;
-using any of the power semiconductor devices including air-cooled and liquid-cooled heat sinks.
5. The method for evaluating the health status of the power semiconductor device based on the thermal impedance characteristic frequency according to claim 1, wherein the method for extracting the thermal impedance characteristic frequency of the power semiconductor device comprises any one of the following methods:
extracting the thermal impedance characteristic frequency of the power semiconductor device or the power semiconductor device and the radiator thereof by acquiring the heat flow curve of the power semiconductor device when the loss changes;
extracting the thermal impedance characteristic frequency of the power semiconductor device or the power semiconductor device and the heat radiator thereof by acquiring the temperature curve of the junction, the shell and the heat radiator of the power semiconductor device when the loss changes;
extracting the characteristic frequency of the thermal impedance of the power semiconductor device or the power semiconductor device and the radiator thereof by acquiring a heat flow curve and a junction, shell and radiator temperature curve of the power semiconductor device when the loss changes, wherein the junction, shell and radiator temperature curve is used for confirming the range of the characteristic frequency, and the heat flow curve is used for confirming the size of the characteristic frequency.
6. The method for assessing the health status of a power semiconductor device based on the thermal impedance characteristic frequency according to claim 5, wherein the extracting the thermal impedance characteristic frequency of the power semiconductor device or the power semiconductor device and the heat sink thereof by obtaining the temperature curve of the junction, the shell and the heat sink of the power semiconductor device when the loss changes comprises:
recording junction temperature, shell temperature time domain step response and step loss;
calculating junction-shell thermal impedance, and fitting with m-order Foster network to convert thermal impedance expressed in time domain into thermal impedance in frequency domain
By s2 pi f j, f 10xI.e. complex frequency s is represented by 2 π j 10xInstead, a second derivative is obtained to obtain a graph function d (x):
finding out a minimum value point of the graph function D (x) in an effective interval, namely corresponding to the characteristic frequency of the thermal impedance, wherein j is an imaginary unit; x is a variable corresponding to the characteristic frequency f.
7. The method for assessing the health status of a power semiconductor device based on the thermal impedance characteristic frequency according to claim 5, wherein the extracting the thermal impedance characteristic frequency of the power semiconductor device or the power semiconductor device and the heat sink thereof by obtaining the temperature curve of the junction, the shell and the heat sink of the power semiconductor device when the loss changes comprises:
shell temperature TcMeasurement point and radiator temperature ThThe measurement points are close enough apart that the thermal path between them is equivalent to a thermal resistance RchCalculating the output heat flow P by the following formulaout(t)：
Fitting a time domain output heat flow curve of the power semiconductor device, wherein a fitting formula is as follows:
in the above formula: pinIs the input loss; epsilon (t) is unit step response in a time domain; f. of1、f2…fnAll characteristic frequencies of the frequency domain thermal impedance model; n is the number of characteristic frequencies.
8. The method for assessing the health status of a power semiconductor device based on the thermal impedance characteristic frequency according to claim 7, wherein the extracting the thermal impedance characteristic frequency of the power semiconductor device and the heat sink thereof is performed by finite element simulation, and comprises:
establishing a geometric model of the power semiconductor device in finite element software, carrying out proper mesh subdivision, and establishing a finite element model;
applying a power step with a certain size to a finite element model of the power semiconductor device to perform temperature field simulation;
and extracting the shell temperature and the radiator temperature through the probe, and extracting the thermal impedance characteristic frequency by using an output heat flow curve.
9. A health status detection terminal of a power semiconductor device, comprising a memory, a processor and a computer program stored in the memory and executable on the processor, wherein the processor is operable to execute the health status evaluation method of the power semiconductor device based on the thermal impedance characteristic frequency according to any one of claims 1 to 8 when executing the program.
10. A computer readable storage medium having instructions which, when executed by a processor in a device, enable the device to perform the method of any one of claims 1 to 8 for thermal impedance signature frequency based power semiconductor device health assessment.
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Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030210718A1 (en) * | 2002-05-10 | 2003-11-13 | Deacon David A.G. | Laser frequency aging compensation |
| CN105718694A (en) * | 2016-01-28 | 2016-06-29 | 重庆大学 | Thermal-network parameter identification method based on IGBT junction temperature information |
| CN106970265A (en) * | 2017-03-29 | 2017-07-21 | 湖南工业大学 | A kind of method that incomplete S-transformation of use Multiple Time Scales estimates harmonic parameters |
| CN107341326A (en) * | 2017-08-29 | 2017-11-10 | 中国南方电网有限责任公司电网技术研究中心 | Service life evaluation method for modular multilevel converter |
| CN107562978A (en) * | 2017-07-05 | 2018-01-09 | 上海交通大学 | Thermal impedance topological structure and thermal power wave filter |
| CN109164370A (en) * | 2018-09-06 | 2019-01-08 | 上海交通大学 | The thermal impedance measuring system and method for power semiconductor |
| CN111060797A (en) * | 2019-12-13 | 2020-04-24 | 河海大学 | IGBT module health state monitoring method based on natural frequency of heat network |
| CN111146931A (en) * | 2019-12-23 | 2020-05-12 | 广东美的白色家电技术创新中心有限公司 | Drive circuit of power device and electronic equipment |
| CN211556403U (en) * | 2019-12-13 | 2020-09-22 | 西安比特联创微波科技有限公司 | Solid-state terahertz oscillator |
| CN112327124A (en) * | 2020-09-30 | 2021-02-05 | 河海大学 | Method for monitoring thermal fatigue aging of IGBT module and method for non-uniform aging |
| CN112347614A (en) * | 2020-10-20 | 2021-02-09 | 上海交通大学 | Power semiconductor device characteristic frequency extraction method and system based on heat flow |
-
2021
- 2021-09-03 CN CN202111030719.6A patent/CN113702794B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030210718A1 (en) * | 2002-05-10 | 2003-11-13 | Deacon David A.G. | Laser frequency aging compensation |
| CN105718694A (en) * | 2016-01-28 | 2016-06-29 | 重庆大学 | Thermal-network parameter identification method based on IGBT junction temperature information |
| CN106970265A (en) * | 2017-03-29 | 2017-07-21 | 湖南工业大学 | A kind of method that incomplete S-transformation of use Multiple Time Scales estimates harmonic parameters |
| CN107562978A (en) * | 2017-07-05 | 2018-01-09 | 上海交通大学 | Thermal impedance topological structure and thermal power wave filter |
| CN107341326A (en) * | 2017-08-29 | 2017-11-10 | 中国南方电网有限责任公司电网技术研究中心 | Service life evaluation method for modular multilevel converter |
| CN109164370A (en) * | 2018-09-06 | 2019-01-08 | 上海交通大学 | The thermal impedance measuring system and method for power semiconductor |
| CN111060797A (en) * | 2019-12-13 | 2020-04-24 | 河海大学 | IGBT module health state monitoring method based on natural frequency of heat network |
| CN211556403U (en) * | 2019-12-13 | 2020-09-22 | 西安比特联创微波科技有限公司 | Solid-state terahertz oscillator |
| CN111146931A (en) * | 2019-12-23 | 2020-05-12 | 广东美的白色家电技术创新中心有限公司 | Drive circuit of power device and electronic equipment |
| CN112327124A (en) * | 2020-09-30 | 2021-02-05 | 河海大学 | Method for monitoring thermal fatigue aging of IGBT module and method for non-uniform aging |
| CN112347614A (en) * | 2020-10-20 | 2021-02-09 | 上海交通大学 | Power semiconductor device characteristic frequency extraction method and system based on heat flow |
Non-Patent Citations (2)
| Title |
|---|
| 胡毅: "IGBT开关诱导产生机械应力波的低压试验与信号分析研究", 《中国优秀硕士学位论文全文数据库 工程科技Ⅱ辑》 * |
| 胡毅: "IGBT开关诱导产生机械应力波的低压试验与信号分析研究", 《中国优秀硕士学位论文全文数据库 工程科技Ⅱ辑》, 15 July 2021 (2021-07-15) * |
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